CN110047939B - COA substrate and COA substrate color resist film thickness measuring method - Google Patents

COA substrate and COA substrate color resist film thickness measuring method Download PDF

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CN110047939B
CN110047939B CN201910258251.2A CN201910258251A CN110047939B CN 110047939 B CN110047939 B CN 110047939B CN 201910258251 A CN201910258251 A CN 201910258251A CN 110047939 B CN110047939 B CN 110047939B
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layer
substrate
gate insulating
passivation layer
coa substrate
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CN110047939A (en
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向盼
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TCL Huaxing Photoelectric Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
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Abstract

A COA substrate comprises a plurality of sub-substrate units arranged on the substrate in an array, wherein each sub-substrate unit is divided into: the display device comprises a display area and a non-display area surrounding the periphery of the display area; wherein the inner film layer of the display region includes: the color filter comprises a first metal layer, a gate insulating layer, an active layer, a second metal layer, a color resistance layer and a passivation layer; the inner film layer of the non-display region includes: a gate insulating layer, a passivation layer and a color resistance layer; has the advantages that: compared with the prior art, the COA substrate and the method for measuring the color resistance layer thickness of the COA substrate adopt the optical interference principle to measure, firstly measure the film thickness of the gate insulating layer and the first passivation layer, and then measure the film thickness of the color resistance layer, so that in the process of measuring the color resistance layer thickness of the COA substrate, the measurement result of the color resistance layer thickness is influenced by the refractive indexes of the gate insulating layer and the first passivation layer in the non-display area, the accuracy of the measurement result is improved, and the yield is improved.

Description

COA substrate and COA substrate color resist film thickness measuring method
Technical Field
The application relates to the field of display, in particular to a COA substrate and a method for measuring the color resist film thickness of the COA substrate.
Background
In a non-COA (Color Filter On Array ) process, only the substrate is located below the measurement area of the Color resist layer, and the refractive index of the substrate is 0, so that the measurement of the film thickness of the Color resist layer is not affected by the refractive index of other layers. However, in the COA process, a first metal layer, a gate insulating layer, an active layer, a second metal layer, a passivation layer, etc. are generally disposed under the measurement region of the color resistance layer. The presence of these layers has an effect on the accuracy of the measurement of the thickness of the resist layer.
Therefore, in the existing COA substrate and the technology for measuring the color resist film thickness of the COA substrate, the problems that the film thickness measurement is unstable due to the influence of the silicon nitride material in the process of measuring the color resist film thickness exist, and the improvement is urgently needed.
Disclosure of Invention
The application relates to a COA substrate and a method for measuring the thickness of a color resistance layer film of the COA substrate, which are used for solving the problems that in the process of measuring the thickness of the color resistance layer film on the COA substrate in the prior art, the influence of a silicon nitride material is caused, and the measurement of the film thickness is unstable.
In order to solve the above problems, the technical solution provided by the present application is as follows:
the application provides a COA base plate, includes that a plurality of arrays arrange the sub-base plate unit on the base plate, every sub-base plate unit divide into: the display device comprises a display area and a non-display area surrounding the periphery of the display area; wherein the content of the first and second substances,
the inner film layer of the display area includes: the color filter comprises a first metal layer, a gate insulating layer, an active layer, a second metal layer, a color resistance layer and a passivation layer;
the inner film layer of the non-display region includes: a gate insulating layer, a passivation layer and a color resistance layer.
According to a preferred embodiment provided by the present application, the COA substrate is a top gate COA substrate or a bottom gate COA substrate.
According to a preferred embodiment provided by the present application, the passivation layer is divided into a first passivation layer and a second passivation layer.
According to a preferred embodiment provided by the present application, the color resistance layer is disposed between the first passivation layer and the second passivation layer.
According to a preferred embodiment provided by the present application, a distance between each edge of the gate insulating layer and the first passivation layer and an edge of the array substrate is: 2-8 mm.
According to a preferred embodiment provided by the present application, the gate insulating layer and the first passivation layer are made of silicon nitride.
According to a preferred embodiment provided by the present application, the thickness of the silicon nitride of the gate insulating layer is 350-400nm, and the thickness of the silicon nitride of the first passivation layer is 0-100 nm.
The application also provides a film thickness measuring method of the COA substrate, wherein the COA substrate comprises a plurality of sub-substrate units, and each sub-substrate unit is divided into: the display device comprises a display area and a non-display area surrounding the periphery of the display area; wherein the inner film layer of the display region includes: the color filter comprises a first metal layer, a gate insulating layer, an active layer, a second metal layer, a color resistance layer and a passivation layer; the inner film layer of the non-display region includes: a gate insulating layer, a passivation layer and a color resistance layer; the film thickness measuring method comprises the following steps:
s10, providing a film thickness measuring machine;
s20, placing the COA substrate on the measuring machine platform;
s30, measuring the film thicknesses of the gate insulating layer and the first passivation layer on the COA substrate by using the measuring machine;
and S40, further, after the deposition of the color resistance layer is finished, measuring the film thickness of the color resistance layer on the COA substrate.
According to a preferred embodiment of the present application, the gate insulating layer and the first passivation layer in step S30 and the color resist layer in step S40 are located in the non-display region.
According to a preferred embodiment of the present application, the measured color resistance layer, the measured gate insulating layer and the measured first passivation layer are all wet films.
Has the advantages that: compared with the prior art, the COA substrate and the method for measuring the color barrier film thickness of the COA substrate comprise a plurality of sub-substrate units which are arranged on the substrate in an array mode, wherein each sub-substrate unit is divided into a display area and a non-display area which surrounds the periphery of the display area; wherein the inner film layers of the display area comprise: the color filter comprises a first metal layer, a gate insulating layer, an active layer, a second metal layer, a color resistance layer and a passivation layer; the inner film layer of the non-display region includes: a gate insulating layer, a passivation layer and a color resistance layer. The measuring method adopts the optical interference principle to measure the film thickness of the gate insulating layer and the first passivation layer, and then measure the film thickness of the color resistance layer, so that the influence of the refractive indexes of the gate insulating layer and the first passivation layer in a non-display area on the measurement result of the color resistance layer film thickness in the measurement process of the color resistance layer film thickness of the COA substrate is reduced, the accuracy of the measurement result is improved, and the yield is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a top view of a COA substrate according to an embodiment of the present disclosure.
Fig. 2 is a structural diagram of an internal film layer of a bottom gate COA substrate according to an embodiment of the present disclosure.
Fig. 3 is a structural diagram of an internal film layer of a top gate COA substrate according to an embodiment of the present disclosure
Fig. 4 is a flowchart of a method for measuring a film thickness of a COA substrate according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
The present application provides a COA substrate, and particularly, to FIGS. 1-4.
Referring to fig. 1, a top view 100 of a COA substrate is shown. Including four sub-substrate units 1, 2, 3, and 4. Each sub-substrate unit, in turn, includes display regions 50, 60, 70, and 80, and non-display regions 51, 52, 53, 54, 61, 62, 63, 64, 71, 72, 73, 74, 81, 82, 83, and 84 disposed around the display regions. The non-display regions of two adjacent sub-substrate units in the same row are connected, for example, the third non-display region 53 of the sub-substrate unit 1 is connected to the first non-display region of the sub-substrate unit 2; the non-display regions of two adjacent sub-substrate units in the same column are connected, for example, the fourth non-display region of sub-substrate unit 1 is connected to the second non-display region of sub-substrate unit 4, and the fourth non-display region of sub-substrate unit 2 is connected to the second non-display region of sub-substrate unit 3.
A COA substrate is formed by a plurality of sub-substrate units (1, 2, 3 and 4) arranged in an array on the substrate, each sub-substrate unit being divided into: a display area (50, 60, 70 and 80) and a non-display area (51, 52, 53, 54, 61, 62, 63, 64, 71, 72, 73, 74, 81, 82, 83 and 84) surrounding the display area; wherein the inner film layer of the display region includes: the color filter comprises a first metal layer, a gate insulating layer, an active layer, a second metal layer, a color resistance layer and a passivation layer; the inner film layer of the non-display region includes: a gate insulating layer, a passivation layer and a color resistance layer.
According to a preferred embodiment provided by the present application, the COA substrate may be a top gate COA substrate or a bottom gate COA substrate.
Example one
In this embodiment, the COA substrate is a bottom gate COA substrate.
Fig. 2 is a diagram 200 of an internal film structure of a bottom gate COA substrate. The method comprises the following steps: the organic light emitting diode comprises a substrate 21, a first metal layer 22 (a gate layer), a gate insulating layer 23, an active layer 24, a second metal layer 25 (a source drain layer), a first passivation layer 26, a color resistance layer 27 and a second passivation layer 28. Wherein the substrate 21 further comprises: a substrate 211, a light-shielding layer 212, and a buffer layer 213. And the refractive index of the substrate is 0.
According to a preferred embodiment provided herein, the passivation layer is divided into a first passivation layer 26 and a second passivation layer 28.
According to a preferred embodiment provided herein, each of the sub-substrate units includes one of the display regions (50, 60, 70, and 80) and four of the non-display regions (51, 52, 53, 54, 61, 62, 63, 64, 71, 72, 73, 74, 81, 82, 83, and 84).
According to a preferred embodiment provided by the present application, the non-display area is divided into a first non-display area (51, 61, 71, 81), a second non-display area (52, 62, 72, 82), a third non-display area (53, 63, 73, 83), and a fourth non-display area (54, 64, 74, 84).
According to a preferred embodiment provided by the present application, the first non-display area is connected to the third non-display area of two adjacent sub-substrate units in the same row; and the fourth display area is connected with the second display area.
According to a preferred embodiment provided by the present application, the color resist layer 27 is disposed between the first passivation layer 26 and the second passivation layer 28. The first passivation layer 26 is disposed below the second passivation layer 28.
According to a preferred embodiment provided by the present application, the distance between each edge of the gate insulating layer 23 and the first passivation layer 26 and the edge of the array substrate is: 2-8 mm.
According to a preferred embodiment provided by the present application, the gate insulating layer 23 and the first passivation layer 26 are both made of silicon nitride.
According to a preferred embodiment provided by the present application, the thickness of the silicon nitride of the gate insulating layer 23 is 350-400nm, and the thickness of the silicon nitride of the first passivation layer 26 is 0-100 nm.
According to a preferred embodiment provided by the present application, the refractive index of the gate insulating layer 23 and the first passivation layer 26 is 1.85.
According to a preferred embodiment provided herein, each of the color resist layers 26 comprises: red color resist layer, blue color resist layer and green color resist layer. The red color resist layer directly covers the first passivation layer 26, the green color resist layer covers the red color resist layer, and the blue color resist layer covers the green color resist layer.
According to a preferred embodiment of the present application, the substrate 21 includes a buffer layer 213 and a light-shielding layer 212.
Example two
In this embodiment, the COA substrate is a top gate COA substrate.
Fig. 3 is a diagram 300 of an internal film structure of a top gate COA substrate. The method comprises the following steps: the substrate 31, the first metal layer 32 (source drain layer), the active layer 33, the gate insulating layer 34, the second metal layer 35 (gate layer), the first passivation layer 36, the color resist layer 37, and the second passivation layer 38. Wherein the substrate 31 further comprises: a substrate 311, a light-shielding layer 312, and a buffer layer 313. And the refractive index of the substrate 31 is 0.
According to a preferred embodiment provided herein, the passivation layer is divided into a first passivation layer 36 and a second passivation layer 38.
According to a preferred embodiment provided herein, each of the sub-substrate units includes one of the display regions (50, 60, 70, and 80) and four of the non-display regions (51, 52, 53, 54, 61, 62, 63, 64, 71, 72, 73, 74, 81, 82, 83, and 84).
According to a preferred embodiment provided by the present application, the non-display area is divided into a first non-display area (51, 61, 71, 81), a second non-display area (52, 62, 72, 82), a third non-display area (53, 63, 73, 83), and a fourth non-display area (54, 64, 74, 84).
According to a preferred embodiment provided by the present application, the first non-display area is connected to the third non-display area of two adjacent sub-substrate units in the same row; and the fourth display area is connected with the second display area.
According to a preferred embodiment provided herein, the color resist layer 37 is disposed between the first passivation layer 36 and the second passivation layer 38.
According to a preferred embodiment provided herein, the first passivation layer 36 is disposed below the second passivation layer 38.
According to a preferred embodiment provided by the present application, the distance between each edge of the gate insulating layer 34 and the first passivation layer 36 and the edge of the array substrate is: 2-8 mm.
According to a preferred embodiment provided by the present application, the gate insulating layer 34 and the first passivation layer 36 are made of silicon nitride.
According to a preferred embodiment provided by the present application, the thickness of the silicon nitride of the gate insulating layer 34 is 350-400nm, and the thickness of the silicon nitride of the first passivation layer 36 is 0-100 nm.
According to a preferred embodiment provided herein, the refractive index of the gate insulating layer 34 and the first passivation layer 36 is 1.85.
According to a preferred embodiment provided herein, each of the color resist layers 37 includes: red color resist layer, blue color resist layer and green color resist layer. The red color resistance layer directly covers the first passivation layer, the green color resistance layer covers the red color resistance layer, and the blue color resistance layer covers the green color resistance layer.
According to a preferred embodiment of the present application, the substrate 31 includes a buffer layer 313 and a light-shielding layer 312.
The application also provides a film thickness measuring method of the COA substrate, wherein the COA substrate comprises a plurality of sub-substrate units, and each sub-substrate unit is divided into: the display device comprises a display area and a non-display area surrounding the periphery of the display area; wherein the inner film layer of the display region includes: the color filter comprises a first metal layer, a gate insulating layer, an active layer, a second metal layer, a color resistance layer and a passivation layer; the inner film layer of the non-display region includes: a gate insulating layer, a passivation layer and a color resistance layer; the film thickness measuring method comprises the following steps: s10, providing a film thickness measuring machine; s20, placing the COA substrate on the measuring machine platform; s30, measuring the film thicknesses of the gate insulating layer and the first passivation layer on the COA substrate by using the measuring machine; and S40, further, after the deposition of the color resistance layer is finished, measuring the film thickness of the color resistance layer on the COA substrate. Fig. 4 is a flowchart of a method for measuring the film thickness of the COA substrate.
According to a preferred embodiment of the present application, the gate insulating layer and the first passivation layer in step S30 and the color resist layer in step S40 are located in the non-display region.
According to a preferred embodiment of the present application, the measured color resistance layer, the measured gate insulating layer and the measured first passivation layer are wet films.
According to a preferred embodiment provided by the present application, the thickness of the color resist layer of the COA substrate is measured by using the principle of optical interference, and the thickness of the gate insulating layer and the thickness of the first passivation layer are measured by using a film thickness measuring machine, and the measurement regions are all in the non-display region. And then, by combining the known refractive index n and extinction coefficient k of the materials of the gate insulating layer and the first passivation layer film, the unknown film thickness of the color resistance layer is calculated by the Binchong film thickness measuring software, so that the influence of the refractive indexes of the gate insulating layer and the first passivation layer on the film thickness of the color resistance layer in the measuring process is avoided, and the accuracy of measuring the film thickness of the color resistance layer is further influenced.
The COA substrate and the method for measuring the color resist film thickness of the COA substrate provided in the embodiments of the present application are described in detail above, and specific examples are applied herein to explain the principle and the implementation manner of the present application, and the description of the embodiments above is only used to help understanding the technical scheme and the core concept of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (3)

1. The method for measuring the film thickness of the COA substrate is characterized in that the COA substrate comprises a plurality of sub-substrate units, and each sub-substrate unit is divided into: the display device comprises a display area and a non-display area surrounding the periphery of the display area; wherein the inner film layer of the display region includes: the color filter comprises a first metal layer, a gate insulating layer, an active layer, a second metal layer, a color resistance layer and a passivation layer, wherein the passivation layer is divided into a first passivation layer and a second passivation layer; the inner film layer of the non-display region includes: a gate insulating layer, a passivation layer and a color resistance layer; the film thickness measuring method comprises the following steps:
s10, providing a film thickness measuring machine;
s20, placing the COA substrate on the measuring machine platform;
s30, measuring the film thickness of the gate insulating layer and the first passivation layer on the COA substrate by using the measuring machine, wherein the thickness of the silicon nitride of the gate insulating layer is 350-400nm, the thickness of the silicon nitride of the first passivation layer is 0-100nm, the COA substrate comprises a buffer layer and a light shielding layer, and the refractive indexes of the gate insulating layer and the first passivation layer are limited to 1.85;
and S40, further, after the deposition of the color resistance layer is finished, measuring the film thickness of the color resistance layer on the COA substrate.
2. The method of claim 1, wherein the gate insulating layer and the first passivation layer in step S30 and the color resist layer in step S40 are located in the non-display region.
3. The method of claim 1, wherein the measured color resist layer, the gate insulating layer and the first passivation layer are wet films.
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JP2937004B2 (en) * 1994-04-11 1999-08-23 東レ株式会社 Method and apparatus for measuring thin film thickness, method for producing optical filter, and method for producing polymer film
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US9632362B2 (en) * 2014-07-03 2017-04-25 Innolux Corporation Liquid crystal display panel and liquid crystal display device containing the same
CN104319277B (en) * 2014-10-15 2017-02-08 深圳市华星光电技术有限公司 COA (color filter on array) substrate and production method thereof
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CN106547146A (en) * 2017-01-22 2017-03-29 京东方科技集团股份有限公司 Dot structure and its manufacture method, array base palte and display device
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Denomination of invention: COA substrate and COA substrate color resistance layer thickness measurement method

Effective date of registration: 20231113

Granted publication date: 20220426

Pledgee: Industrial and Commercial Bank of China Limited Shenzhen Guangming Sub branch

Pledgor: TCL Huaxing Photoelectric Technology Co.,Ltd.

Registration number: Y2023980065368