CN110047806B - Square ceramic tube shell and preparation process thereof - Google Patents

Square ceramic tube shell and preparation process thereof Download PDF

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Publication number
CN110047806B
CN110047806B CN201910401886.3A CN201910401886A CN110047806B CN 110047806 B CN110047806 B CN 110047806B CN 201910401886 A CN201910401886 A CN 201910401886A CN 110047806 B CN110047806 B CN 110047806B
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anode
ring
temperature
cathode
square
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CN110047806A (en
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徐宏伟
陈强
张琼
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Jiangyin Saiying Electron Co ltd
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Jiangyin Saiying Electron Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H01L21/4896—Mechanical treatment, e.g. cutting, bending
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Ceramic Products (AREA)

Abstract

The invention relates to a square ceramic tube shell, which comprises an upper cover and a ceramic base, wherein the upper cover is arranged on the ceramic base and comprises a cathode square electrode and a cathode split flange, the cathode split flange comprises a cathode thick ring and a cathode thin ring, the inner edge of the cathode thick ring is concentrically welded on the outer edge of the cathode thin ring, and the inner edge of the cathode thin ring is concentrically welded on the outer edge of the cathode square electrode; the ceramic base comprises an anode square electrode, an anode sealing ring, a square ceramic ring, an anode split flange and a lead pipe which are concentrically welded from bottom to top, wherein the lead pipe is connected to the square ceramic ring in a penetrating mode, the anode split flange comprises an anode thick ring and an anode thin ring, the inner edge of the anode thick ring is concentrically welded to the outer edge of the anode thin ring, and the inner edge of the anode thin ring is concentrically welded to the outer edge of the anode square electrode. The invention adopts the split flange and the accurate welding temperature control curve to better solve the problem of stress difference of the welding area of the square tube shell.

Description

Square ceramic tube shell and preparation process thereof
Technical Field
The invention relates to a square ceramic tube shell and a preparation process thereof, and belongs to the technical field of power electronics.
Background
Since the power semiconductor device mainly uses a rectifying tube and a thyristor in the past, and the chip of the power semiconductor device is usually in a wafer shape, the ceramic tube shell for packaging is determined to be in a circular structure, and the ceramic tube shell with the circular structure and the preparation process are basically mature.
With the rapid development of new devices represented by Insulated Gate Bipolar Transistors (IGBTs) in recent years, new demands are also being made on package carriers. The traditional plastic module packaging method restricts the application of the IGBT in the high-voltage high-current field, and the crimping ceramic packaging IGBT based on double-sided heat dissipation has obvious technical advantages in the high-power fields such as flexible direct current transmission and the like. Because the IGBT chips are square, the packaging carrier with a square structure is determined to be the most economical and the most space-saving, and therefore, the design concept of the square ceramic tube shell is provided. Compared with the common round ceramic tube shell, the welding stress of the square ceramic tube shell is unevenly distributed, and the welding stress difference between 4 round corners and 4 edges is large, so that the welding stress difference is a main cause of tube shell welding failure and temperature impact resistance failure.
Disclosure of Invention
The invention aims to solve the technical problems of providing a square ceramic tube shell and a preparation process thereof aiming at the prior art, and improving the success rate of tube shell welding and the temperature impact resistance.
The invention relates to a technical scheme for solving the problems, which comprises the following steps: the square ceramic tube shell comprises an upper cover and a ceramic base, wherein the upper cover is arranged on the ceramic base, the upper cover comprises a cathode square electrode and a cathode split flange, the cathode split flange comprises a cathode thick ring and a cathode thin ring, the inner edge of the cathode thick ring is concentrically welded on the outer edge of the cathode thin ring, and the inner edge of the cathode thin ring is concentrically welded on the outer edge of the cathode square electrode; the ceramic base comprises an anode square electrode, an anode sealing ring, a square ceramic ring, an anode split flange and a lead pipe which are concentrically welded from bottom to top, wherein the lead pipe is connected to the square ceramic ring in a penetrating mode, the anode split flange comprises an anode thick ring and an anode thin ring, the inner edge of the anode thick ring is concentrically welded to the outer edge of the anode thin ring, and the inner edge of the anode thin ring is concentrically welded to the outer edge of the anode square electrode.
Preferably, the square porcelain ring comprises a pulsator area and a straight wall area, the lead tube is connected to the straight wall area of the square porcelain ring in a penetrating mode, and the outer diameter of the straight wall area is the same as that of the pulsator area.
The invention provides a preparation process of a square ceramic tube shell, which comprises the following steps of: comprising the following steps: cutting, edge milling/punching, annealing, fine grinding, wherein
Cutting: cutting by adopting an phi 160mm alloy disc milling cutter and a numerical control milling machine, and reserving the reprocessing amount of the outer edge to be 0.5-1mm;
edge milling/punching:
milling parameters s=10000-12000 revolutions per minute f=1000-1500 mm/min,
the punching parameter S=3000-3500 revolutions per minute F=200-400 mm/min, S represents the rotational speed, F represents the feeding speed;
annealing: preserving heat for 45-60 minutes in a hydrogen-nitrogen mixed atmosphere at 800-820 ℃, cooling to room temperature for not less than 1 hour, and annealing to obtain the annealed product with the hardness of 30-40HV;
when the flange and the electrode are welded, the welding temperature is strictly controlled, and the welding temperature comprises two parts, namely temperature rise control and temperature reduction control, wherein the temperature rise control parameters are as follows: t=10-90 min, temperature=200-820 ℃; cooling control parameters: t=90-240 min, temperature=820-80 ℃.
Preferably, the temperature increase control parameter includes: t=10-50 min, temperature=200-780 ℃; t=50-60 min, temperature=780-820 ℃; t=60-90 min, temperature=820 ℃; the cooling control parameters include: t=90-110 min, temperature=820-650 ℃; t=110-120 min, temperature=650 ℃; t=120-130 min, temperature=650-600 ℃; t=130-140 min, temperature=600 ℃; t=140-150 min, temperature=600-550 ℃; t=150-170 min, temperature=550 ℃; t=170-230 min, temperature=550-80 ℃; t=230-240 min, temperature=80 ℃.
Compared with the prior art, the invention has the advantages that:
the invention adopts the split flange and the accurate welding temperature control curve to better solve the problem of stress difference of the welding area of the square tube shell. The split flange is welded with the electrode or the ceramic through the transition of thick and thin materials, the thick area is used for the subsequent cold-pressing encapsulation of the device, the stress difference of different areas of the corner edge of the square structure can be balanced through the plastic deformation of the materials in the thin area during welding, and the thick area can ensure that the cold-pressing encapsulation intensity is not influenced.
Drawings
Fig. 1 is a schematic view of a square ceramic envelope according to an embodiment of the present invention.
Fig. 2 is an enlarged schematic view at a in fig. 1.
Fig. 3 is a schematic diagram of a temperature profile of a welding process according to an embodiment of the present invention.
In the figure, an upper cover 1, a ceramic base 2, a cathode square electrode 1.1, a cathode split flange 1.2, a cathode thick ring 1.2.1, a cathode thin ring 1.2.2, a ceramic base 2, an anode square electrode 2.1, an anode sealing ring 2.2, a square ceramic ring 2.3, an anode split flange 2.4, a lead tube 2.5, an anode thick ring 2.4.1 and an anode thin ring 2.4.2.
Detailed Description
The invention is described in further detail below with reference to the embodiments of the drawings.
As shown in fig. 1 and 2, a square ceramic tube shell in this embodiment includes an upper cover 1 and a ceramic base 2, the upper cover 1 is covered on the ceramic base 2, the upper cover 1 includes a cathode square electrode 1.1 and a cathode split flange 1.2, the cathode split flange 1.2 is concentrically welded on the outer edge of the cathode square electrode 1.1, the cathode split flange 1.2 includes a cathode thick ring 1.2.1 and a cathode thin ring 1.2.2, the inner edge of the cathode thick ring 1.2.1 is concentrically welded on the outer edge of the cathode thin ring 1.2.2, and the inner edge of the cathode thin ring 1.2.2 is concentrically welded on the outer edge of the cathode square electrode 1.1.
The ceramic base 2 comprises an anode square electrode 2.1, an anode sealing ring 2.2, a square ceramic ring 2.3, an anode split flange 2.4 and a lead tube 2.5. The anode square electrode 2.1, the anode sealing ring, the square ceramic ring 2.3 and the anode split flange 2.4 are concentrically welded from bottom to top. The lead tube 2.5 is connected to the straight wall area of the square ceramic ring 2.3 in a penetrating way, the square ceramic ring 2.3 comprises a wave wheel area and a straight wall area, the wave wheel area can increase the creepage distance of the ceramic ring, the straight wall area is thickened to increase the strength of ceramic in a welding area, the outer diameter of the ceramic in the welding area is basically the same as that of the wave wheel, the anode split flange 2.4 comprises an anode thick ring 2.4.1 and an anode thin ring 2.4.2, the inner edge of the anode thick ring 2.4.1 is concentrically welded to the outer edge of the anode thin ring 2.4.2, and the inner edge of the anode thin ring 2.4.2 is concentrically welded to the outer edge of the anode square electrode 2.1.
In this embodiment, the machining process, the ceramic metallization process, the surface nickel plating process, and the like of the other parts are the same as those of the common thyristor circular tube shell except that the machining process and the welding process of the cathode and anode square electrodes are different from those of the common thyristor circular tube shell.
The embodiment provides a processing process flow of the cathode and anode square electrode, which comprises the following steps:
comprising the following steps: cutting, edge milling/punching, annealing, fine grinding, wherein
Cutting: adopting an phi 160mm alloy disc milling cutter, placing the electrode in a numerical control milling machine for cutting, and reserving the reprocessing amount of the outer edge of the electrode to be 0.5-1mm;
edge milling/punching: performing edge milling and punching operations on the cut electrode on edge milling/punching equipment,
milling parameters s=10000-12000 revolutions per minute f=1000-1500 mm/min
Perforation parameters s=3000-3500 rpm f=200-400 mm/min
Annealing: placing the electrode subjected to edge milling/punching in a hydrogen-nitrogen mixed atmosphere at 800-820 ℃ for heat preservation for 45-60 minutes, cooling to room temperature for not less than 1 hour, and annealing to obtain the electrode with the hardness of 30-40HV;
and (3) fine grinding: the customized planet wheel is the same as the common circular electrode fine grinding process.
In order to reduce the welding stress of the square tube shell and reduce the stress difference of each area, the welding temperature rise and reduction speed must be strictly controlled, and a detailed welding temperature control table is prepared as follows (the temperature curve is shown in fig. 3):
in addition to the above embodiments, the present invention also includes other embodiments, and all technical solutions that are formed by equivalent transformation or equivalent substitution should fall within the protection scope of the claims of the present invention.

Claims (4)

1. The utility model provides a square ceramic tube shell, includes upper cover (1) and ceramic base (2), upper cover (1) lid is arranged in on ceramic base (2), its characterized in that: the upper cover (1) comprises a cathode square electrode (1.1) and a cathode split flange (1.2), the cathode split flange (1.2) comprises a cathode thick ring (1.2.1) and a cathode thin ring (1.2.2), the inner edge of the cathode thick ring (1.2.1) is concentrically welded on the outer edge of the cathode thin ring (1.2.2), and the inner edge of the cathode thin ring (1.2.2) is concentrically welded on the outer edge of the cathode square electrode (1.1); the ceramic base (2) comprises an anode square electrode (2.1), an anode sealing ring (2.2), a square ceramic ring (2.3), an anode split flange (2.4) and a lead pipe (2.5) which are concentrically welded from bottom to top, wherein the lead pipe (2.5) is connected onto the square ceramic ring (2.3) in a penetrating mode, the anode split flange (2.4) comprises an anode thick ring (2.4.1) and an anode thin ring (2.4.2), the inner edge of the anode thick ring (2.4.1) is concentrically welded to the outer edge of the anode thin ring (2.4.2), and the inner edge of the anode thin ring (2.4.2) is concentrically welded to the outer edge of the anode square electrode (2.1).
2. A square ceramic package according to claim 1, wherein: the square porcelain ring (2.3) comprises a pulsator area and a straight wall area, the lead tube (2.5) is connected to the straight wall area of the square porcelain ring (2.3) in a penetrating mode, and the outer diameter of the straight wall area is the same as that of the pulsator area.
3. A process for preparing a square ceramic package according to claim 1, wherein: the technological process of the cathode and anode square electrode is as follows: comprising the following steps: cutting, edge milling/punching, annealing, fine grinding, wherein
Cutting: cutting by adopting an phi 160mm alloy disc milling cutter and a numerical control milling machine, and reserving the reprocessing amount of the outer edge to be 0.5-1mm;
edge milling/punching:
milling parameters s=10000-12000 revolutions per minute f=1000-1500 mm/min,
the punching parameter S=3000-3500 revolutions per minute F=200-400 mm/min, S represents the rotational speed, F represents the feeding speed;
annealing: preserving heat for 45-60 minutes in a hydrogen-nitrogen mixed atmosphere at 800-820 ℃, cooling to room temperature for not less than 1 hour, and annealing to obtain the annealed product with the hardness of 30-40HV;
when the flange and the electrode are welded, the welding temperature is strictly controlled, and the welding temperature comprises two parts, namely temperature rise control and temperature reduction control, wherein the temperature rise control parameters are as follows: t=10-90 min, temperature=200-820 ℃; cooling control parameters: t=90-240 min, temperature=820-80 ℃.
4. A process for preparing a square ceramic envelope according to claim 3, characterized in that: the temperature rise control parameters include: t=10-50 min, temperature=200-780 ℃; t=50-60 min, temperature=780-820 ℃; t=60-90 min, temperature=820 ℃; the cooling control parameters include: t=90-110 min, temperature=820-650 ℃; t=110-120 min, temperature=650 ℃; t=120-130 min, temperature=650-600 ℃; t=130-140 min, temperature=600 ℃; t=140-150 min, temperature=600-550 ℃; t=150-170 min, temperature=550 ℃; t=170-230 min, temperature=550-80 ℃; t=230-240 min, temperature=80 ℃.
CN201910401886.3A 2019-05-15 2019-05-15 Square ceramic tube shell and preparation process thereof Active CN110047806B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB803225A (en) * 1955-02-04 1958-10-22 Eitel Mccullough Inc Improvements in or relating to electron tubes having ceramic envelopes
CN202049936U (en) * 2011-05-11 2011-11-23 江阴市赛英电子有限公司 Explosion-proof flange
CN107610850A (en) * 2017-10-21 2018-01-19 江阴市赛英电子股份有限公司 A kind of superpower high pressure high-insulativity ceramic cartridge
CN107768314A (en) * 2017-10-21 2018-03-06 江阴市赛英电子股份有限公司 A kind of flat board elastic compression joint encapsulation IGBT ceramic cartridges and preparation method
CN209929289U (en) * 2019-05-15 2020-01-10 江阴市赛英电子股份有限公司 Square ceramic tube shell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB803225A (en) * 1955-02-04 1958-10-22 Eitel Mccullough Inc Improvements in or relating to electron tubes having ceramic envelopes
CN202049936U (en) * 2011-05-11 2011-11-23 江阴市赛英电子有限公司 Explosion-proof flange
CN107610850A (en) * 2017-10-21 2018-01-19 江阴市赛英电子股份有限公司 A kind of superpower high pressure high-insulativity ceramic cartridge
CN107768314A (en) * 2017-10-21 2018-03-06 江阴市赛英电子股份有限公司 A kind of flat board elastic compression joint encapsulation IGBT ceramic cartridges and preparation method
CN209929289U (en) * 2019-05-15 2020-01-10 江阴市赛英电子股份有限公司 Square ceramic tube shell

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