CN207587719U - A kind of tablet elastic compression joint encapsulates IGBT ceramic cartridges - Google Patents
A kind of tablet elastic compression joint encapsulates IGBT ceramic cartridges Download PDFInfo
- Publication number
- CN207587719U CN207587719U CN201721359996.0U CN201721359996U CN207587719U CN 207587719 U CN207587719 U CN 207587719U CN 201721359996 U CN201721359996 U CN 201721359996U CN 207587719 U CN207587719 U CN 207587719U
- Authority
- CN
- China
- Prior art keywords
- emitter
- ceramic
- welded
- heart
- split type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Landscapes
- Ceramic Products (AREA)
Abstract
The utility model is related to a kind of tablet elastic compression joints to encapsulate IGBT ceramic cartridges, include upper cover and ceramic base, the upper cover is placed on ceramic base, the ceramic base includes emitter, emitter sealing ring, emitter flange, ceramic ring and gate lead pipe, the emitter sealing ring inner edge is welded on the outer rim of emitter with one heart, the emitter sealing ring outer rim is welded on the lower face of ceramic ring with one heart, the emitter flange is welded on the upper surface of ceramic ring with one heart, the gate lead pipe is welded in the shell wall of ceramic ring, multiple split type racks have been evenly arranged in the front of the emitter, each pass through elastic contact mechanism elastic connection between split type rack and emitter.The utility model had both maintained the function of original compression joint type encapsulation two-side radiation, it can ensure that each chip is good by being contacted between elastic compression joint and molybdenum sheet, collector, emitter again, fundamentally solve the problems, such as to have during original integral type rack encapsulation the segment chip crimping bad.
Description
Technical field
The utility model is related to a kind of ceramic cartridges and preparation method thereof, can realize the tablet elastic compression joint of IGBT device
Formula encapsulates, and belongs to power electronics field.
Background technology
Flat crimping type ceramic package IGBT with no layer, without wire bonding, two-side radiation and failure short-circuit protection
Feature, so as to lower thermal resistance, higher working junction temperature, lower parasitic inductance, broader safety operation area and higher
Reliability, application of mainly connecting in flexible DC power transmission, while in the high application of application environment harshness and reliability requirement
Field also very competitive superiority.
Although flat crimping type ceramic package IGBT has more advantage on Performance And Reliability, dozens of is realized
The gross area of igbt chip is without dead angle uniform stressed, and the requirement to technique is extremely harsh, the load that ceramic cartridge is implemented as encapsulation
Body, to realizing that device performance is most important, the particularly machining accuracy of multiple stage emitter group, including rack integral planar degree,
The comprehensive differences such as rack levels, rack face and the radiating surface depth of parallelism must be within 10 μ.
And material stress, cutting stress, welding high temperature deformation, many links such as thickness of coating difference are all in preparation process
Its original design accuracy can be influenced, so as to which encapsulation be caused to fail.
Utility model content
Technical problem to be solved in the utility model is weakness and hidden danger for the above-mentioned prior art, is provided a kind of flat
Plate elastic compression joint encapsulates IGBT ceramic cartridges and preparation method, realizes the tablet elastic compression joint encapsulation of IGBT.
The technical scheme in the invention for solving the above technical problem is：A kind of tablet elastic compression joint encapsulation IGBT potteries
Porcelain tube shell includes upper cover and ceramic base, and the upper cover is placed on ceramic base, and upper cover includes collector and collector
Flange, collector flange are welded on the outer rim of collector with one heart；The ceramic base include emitter, emitter sealing ring,
Emitter flange, ceramic ring and gate lead pipe, the emitter sealing ring inner edge are welded on the outer rim of emitter, the hair with one heart
Emitter-base bandgap grading sealing ring outer rim is welded on the lower face of ceramic ring with one heart, and the emitter flange is welded on the upper surface of ceramic ring, institute with one heart
Gate lead pipe is stated to be welded in the shell wall of ceramic ring, it is characterised in that：Multiple points have been evenly arranged in the front of the emitter
Body formula rack each passes through elastic contact mechanism elastic connection between split type rack and emitter.
Preferably, the elastic contact mechanism includes being opened in emitter and the guide post location hole and bullet on split type rack
Spring placing chamber, a spring placing chamber correspond to two guide post location holes for being located at its both sides, and in guide post location hole and spring
Guide post and spring are respectively arranged in placing chamber.
Preferably, there is sufficient space on the guide post location hole top, when split type rack is closely crimped with emitter, leads
Column will not push up location hole top.
A kind of preparation method of tablet elastic compression joint encapsulation IGBT ceramic cartridges, the split type rack use oxygen-free copper
Section steel cutting forms, and the described method comprises the following steps：
Split type rack cutting：Alloy disks milling cutter, Numerical control cutting, reserved thickness 0.05-0.1mm；
Emitter surface punching/chamfering：Guide post location hole and spring placing chamber are processed, machining center makes, and rotating speed is
2500 turns/min, fltting speed 200mm/min, 0.5 × 45 ° of Hole chamfering, 0.3 × 45 ° of side chamfering；
Split type rack fine grinding：Using the two-sided fine grinding of four axis of planetary gear, abrasive material uses 500 mesh diamantanes, and 800 turns of rotating speed/
Point, stock removal 0.05-0.1mm；
Split type rack annealing：30 minutes are kept the temperature in 800 DEG C of hydrogen nitrogen mixed gas atmosphere, cooling time is not less than 1 hour, annealing
Hardness 35-40HV afterwards；
Installation：Split type rack is not electroplated, and is mounted on ceramic base by guide post and spring.
Preferably, each disk is 1 batch during the fine grinding of split type rack, the split type rack difference in thickness control of each batch
System, by further measuring classification, makes split type rack difference in thickness control in 3 μm or smaller range within 10 μm.
Compared with prior art, it is the characteristics of the utility model：
1st, influence of the cutting stress generated during integral type rack finishing impression to emitter precision is avoided, this often causes
The main reason for compression joint type package failure.
2nd, the function of original compression joint type encapsulation two-side radiation had not only been maintained, but also can ensure that each chip passes through elastic compression joint
It is contacted between molybdenum sheet, collector, emitter well, has segment chip when fundamentally solving original integral type rack encapsulation
Crimp the problem of bad.
3rd, split type rack is electroplated due in the sealed environment of inert gas shielding, not needing to, so both can be with
Influence of the thickness of coating difference to emitter precision is avoided, and naked copper contact resistance is lower, device pressure drop smaller, and pass through
To the sizing screening of split type rack, rack precision controlling can be made in 3 μm or smaller range, it in this way can producing property
Can more excellent, the higher IGBT device of reliability, be the requirements at the higher level such as aviation, military project application field service.
4th, elastic compression joint encapsulation can reduce the technology difficulty of each component, be advantageously implemented large-scale production.
Description of the drawings
Fig. 1 is the internal structure schematic diagram of the utility model.
Fig. 2 is the enlarged drawing at A in Fig. 1.
Fig. 3 is the vertical view of Fig. 1.
Wherein：
Collector 1
Ceramic base 2
Collector 1.1
Collector flange 1.2
Emitter 2.1
Emitter sealing ring 2.2
Emitter flange 2.3
Ceramic ring 2.4
Gate lead pipe 2.5
Guide post location hole 2.1.1
Spring placing chamber 2.1.2
Guide post 2.1.3
Spring 2.1.4
Split type rack 3.
Specific embodiment
The utility model is described in further detail with reference to embodiments.
As shown in Fig. 1-3, the utility model is related to a kind of tablet elastic compression joints to encapsulate IGBT ceramic cartridges, includes
Upper cover 1 and ceramic base 2, the upper cover 1 are placed on ceramic base 2, and upper cover 1 includes 1.1 sum aggregate electrode flange of collector
1.2, collector flange 1.2 is welded on the outer rim of collector 1.1 with one heart, and preparation process is the same as common compression joint type ceramic cartridge upper cover
Manufacturing process is identical.
The ceramic base 2 includes emitter 2.1, emitter sealing ring 2.2, emitter flange 2.3,2.4 and of ceramic ring
Gate lead pipe 2.5.2.2 inner edge of emitter sealing ring is welded on the outer rim of emitter 2.1, the emitter sealing with one heart
2.2 outer rim of ring is welded on the lower face of ceramic ring 2.4 with one heart, and the emitter flange 2.3 is welded on the upper end of ceramic ring 2.4 with one heart
Face, the gate lead pipe 2.5 are welded in the shell wall of ceramic ring 2.4.
Multiple split type racks 3 are evenly arranged in the front of the emitter 2.1, each split type rack 3 and transmitting
Pass through elastic contact mechanism elastic connection between pole 2.1.The elastic contact mechanism includes being opened in emitter 2.1 and split type
Guide post location hole 2.1.1 and spring placing chamber 2.1.2, a spring placing chamber 2.1.2 on frame 3 correspond to two and are located at its both sides
Guide post location hole 2.1.1, and be respectively arranged with guide post 2.1.3 in guide post location hole 2.1.1 and spring placing chamber 2.1.2
With spring 2.1.4, there is sufficient space on the guide post location hole 2.1.1 tops, when split type rack 3 and emitter 2.1 are closely pressed
When connecing, guide post 2.1.3 will not push up location hole top.
The ceramic base 2 is in addition to split type rack 3, guide post 2.1.3 and spring 2.1.4, and 2.1 surface of emitter is only
Guide post location hole and spring placing chamber need to be beaten in advance by machining center, remaining ceramic ring processing technology and ceramic ring metallization process and
Flange, electrode, gate lead pipe soldering processes are identical with triode thyristor ceramic base preparation process.
The split type rack 3 is formed using oxygen-free copper section steel cutting, and technological process is as follows：
Cutting：Alloy disks milling cutter, Numerical control cutting, reserved thickness 0.05-0.1mm, reserved thickness primarily to after
The fine grinding in face is reserved.
Punching/chamfering：Guide post location hole and spring placing chamber are processed, machining center makes, and S=2500, F=200, hole are fallen
0.5 × 45 ° of angle, 0.3 × 45 ° of side chamfering, wherein S are the rotating speed of rotary head, and unit is to turn/the fltting speed of min, F for rotary head, single
Position is mm/min；
Fine grinding：Using the two-sided fine grinding of four axis of planetary gear, abrasive material uses 500 mesh diamantanes, 800 revs/min of rotating speed, stock removal
0.05-0.1mm.Each disk is 1 batch, and the split type rack difference in thickness of each batch can be controlled within 10 μm, is led to
It crosses and further measures classification, split type rack difference in thickness control can be made in 3 μm or smaller range.
Annealing：30 minutes are kept the temperature in 800 DEG C of hydrogen nitrogen mixed gas atmosphere, cooling time is not less than 1 hour, hardness 35- after annealing
40HV。
Installation：Split type rack is not electroplated, and is mounted on ceramic base disk by guide post and spring, also can be in customers' place
Installation.
Guide post uses pultrusion non-oxygen copper bar, automatic material cutter fracture, and diameter tolerance is controlled in ± 0.02mm, length tolerance control
System is in ± 0.2mm.Spring can require to be customized formula buying according to product pressure.
In addition to the implementation, the utility model has further included other embodiment, all to use equivalents or equivalent
The technical solution that alternative is formed, should all fall within the protection domain of the utility model claims.
Claims (3)
1. a kind of tablet elastic compression joint encapsulates IGBT ceramic cartridges, include upper cover and ceramic base, the upper cover is placed on
On ceramic base, upper cover includes collector sum aggregate electrode flange, and collector flange is welded on the outer rim of collector with one heart；It is described
Ceramic base includes emitter, emitter sealing ring, emitter flange, ceramic ring and gate lead pipe, the emitter sealing
Ring inner edge is welded on the outer rim of emitter with one heart, and the emitter sealing ring outer rim is welded on the lower face of ceramic ring with one heart, described
Emitter flange is welded on the upper surface of ceramic ring with one heart, and the gate lead pipe is welded in the shell wall of ceramic ring, it is characterised in that：
Multiple split type racks have been evenly arranged in the front of the emitter, have each passed through elasticity between split type rack and emitter
Contact mechanism elastic connection.
2. a kind of tablet elastic compression joint encapsulation IGBT ceramic cartridges according to claim 1, it is characterised in that：The bullet
Property contact mechanism include the guide post location hole being opened on emitter and split type rack and spring placing chamber, a spring placement
Chamber corresponds to two and is located at the guide post location hole of its both sides, and be respectively arranged with guide post in guide post location hole and spring placing chamber
And spring.
3. a kind of tablet elastic compression joint encapsulation IGBT ceramic cartridges according to claim 2, it is characterised in that：It is described to lead
There is sufficient space on column location hole top, and when split type rack is closely crimped with emitter, guide post will not push up location hole top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721359996.0U CN207587719U (en) | 2017-10-21 | 2017-10-21 | A kind of tablet elastic compression joint encapsulates IGBT ceramic cartridges |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721359996.0U CN207587719U (en) | 2017-10-21 | 2017-10-21 | A kind of tablet elastic compression joint encapsulates IGBT ceramic cartridges |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207587719U true CN207587719U (en) | 2018-07-06 |
Family
ID=62728240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721359996.0U Withdrawn - After Issue CN207587719U (en) | 2017-10-21 | 2017-10-21 | A kind of tablet elastic compression joint encapsulates IGBT ceramic cartridges |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207587719U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768314A (en) * | 2017-10-21 | 2018-03-06 | 江阴市赛英电子股份有限公司 | A kind of flat board elastic compression joint encapsulation IGBT ceramic cartridges and preparation method |
| CN115206949A (en) * | 2022-07-13 | 2022-10-18 | 西安电子科技大学 | Vertical conductive type power semiconductor device double-sided compression joint packaging structure |
-
2017
- 2017-10-21 CN CN201721359996.0U patent/CN207587719U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768314A (en) * | 2017-10-21 | 2018-03-06 | 江阴市赛英电子股份有限公司 | A kind of flat board elastic compression joint encapsulation IGBT ceramic cartridges and preparation method |
| CN107768314B (en) * | 2017-10-21 | 2023-08-22 | 江阴市赛英电子股份有限公司 | Ceramic tube shell for flat elastic crimping packaging IGBT and preparation method |
| CN115206949A (en) * | 2022-07-13 | 2022-10-18 | 西安电子科技大学 | Vertical conductive type power semiconductor device double-sided compression joint packaging structure |
| CN115206949B (en) * | 2022-07-13 | 2023-09-29 | 西安电子科技大学 | Double-sided crimping packaging structure of vertical conduction type power semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107768314A (en) | A kind of flat board elastic compression joint encapsulation IGBT ceramic cartridges and preparation method | |
| CN102222657B (en) | Multi-ring-arranged double-integrated circuit (IC) chip packaging piece and production method thereof | |
| CN105977173B (en) | A kind of method of high penetration rate craft eutectic welding semiconductor bare chip | |
| CN207587719U (en) | A kind of tablet elastic compression joint encapsulates IGBT ceramic cartridges | |
| CN1812083A (en) | Semiconductor apparatus and manufacturing method | |
| CN106684227B (en) | A kind of ultraviolet LED method for packing | |
| CN105428266B (en) | The product of flip-chip eutectic bonding method and acquisition with medium bridge | |
| CN105633757B (en) | Micro- melting sealed technique of spacing glass capsulation connector | |
| US10158051B2 (en) | Process method for refining photoconverter to bond-package LED and refinement equipment system | |
| CN105826458A (en) | Preparation method of DPC ceramic substrate with metal surrounding dam | |
| CN104708192A (en) | Diffusion welding method for W-Ti alloy target assembly | |
| DE112015006112T5 (en) | SEMICONDUCTOR DEVICE | |
| CN102169839B (en) | Method for packaging preforming sheet by using Au-Sn solder | |
| CN100404197C (en) | Preparation method of copper/molybdenum/copper electronic package composite material | |
| CN108417501A (en) | Power module and preparation method thereof | |
| CN108527174B (en) | Grinding wheel for chamfering silicon carbide substrates and preparation method thereof | |
| CN102231376B (en) | Multi-cycle arrangement carrier-free double-integrated chip (IC) package and production method | |
| US5234865A (en) | Method of soldering together two components | |
| CN106552990B (en) | A kind of inside micro-bonding method of patch potentiometer | |
| CN105931989A (en) | Method Of Manufacturing Semiconductor Device And Semiconductor Device | |
| CN105622083A (en) | Preparation method of thermistor | |
| CN109590633A (en) | Lead welding filler metal and its preparation method and application for integrated antenna package | |
| CN105789097A (en) | Clamp for ceramic pin grid array shell parallel seam welding for system level packaging | |
| CN113594101B (en) | Metal packaging shell and manufacturing method thereof | |
| CN107919426B (en) | Ceramic base for inorganic packaging of UV LED and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180706 Effective date of abandoning: 20230822 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20180706 Effective date of abandoning: 20230822 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |