CN110047795A - A kind of MWT laser boring table top and drilling technology - Google Patents
A kind of MWT laser boring table top and drilling technology Download PDFInfo
- Publication number
- CN110047795A CN110047795A CN201910252756.8A CN201910252756A CN110047795A CN 110047795 A CN110047795 A CN 110047795A CN 201910252756 A CN201910252756 A CN 201910252756A CN 110047795 A CN110047795 A CN 110047795A
- Authority
- CN
- China
- Prior art keywords
- solid area
- table top
- laser
- mwt
- distributed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005516 engineering process Methods 0.000 title claims abstract description 14
- 238000005553 drilling Methods 0.000 title claims abstract description 10
- 239000007787 solid Substances 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000004080 punching Methods 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 241000283080 Proboscidea <mammal> Species 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 7
- 239000012634 fragment Substances 0.000 abstract description 5
- 239000011159 matrix material Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 206010021703 Indifference Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of MWT laser boring table top and drilling technology, the punching station face includes table-board body, it is divided into solid area and vacancy section in the table-board body, the vacancy section is distributed at the punch position of laser hole, the solid area is distributed in the non-perforated place in the hollowed out area, and vacuum stomata is distributed on the solid area.In terms of drilling technology, first table top is transformed, then implements drill process, greatly reduces silicon wafer and mesa contact area, influence of the dust to silicon wafer is effectively reduced, so as to which processing procedure fragment rate and crack is effectively reduced.
Description
Technical field
The present invention relates to silicon solar cell technology fields, and in particular to the original of MWT silicon solar cell processing procedure
Auxiliary material or consumptive material design.
Background technique
Currently, crystal silicon solar technology includes heterojunction solar battery HIT, back electrode contacts silicon solar cell
IBC, emitter circulating break-through silicon solar cell EWT, buried contaCt solar Cells, inclination evaporated metal contact silicon solar electricity
Pond OECO and metal piercing winding silicon solar cell MWT etc..Wherein, MWT battery is because its is high-efficient, and shading-area is small and more
Good appearance characteristics receive more and more attention.
MWT silicon solar cell is that the carrier for being collected front gate line by laser drill passes through battery transfer to battery
The back side achievees the purpose that improve transfer efficiency to reduce shading-area.As a result, to realize MWT battery structure, need in routine
Punching is added in battery structure and two functions are connected in hole.Wherein, punching is often realized by the way of laser boring at present；
Hole conducting often uses silk-screen printing filling perforation slurry, then realizes with front electrode and Al-BSF co-sintering.Such as patent
CN201410016190.6 provides a kind of MWT battery preparation method of low cost, production of this method in conventional crystalline silicon battery
Only increase two procedures in process and realize MWT battery structure, due to this method simple process, equipment is gone into operation few, it has also become in the industry
The unique batch production technique of MWT battery at present.
In MWT battery processing procedure, laser boring is first process, is also different from the main and crucial work of conventional batteries
Sequence, the purpose is to prepare the hole of certain amount and arrangement, 6 × 6 laser borings as shown in Figure 1 on silicon wafer by laser
Dot matrix.Wherein, table top panel involved in laser boring process is shown in Fig. 2, in addition to the vacuum hole needed for adsorb silicon wafer, such as Fig. 2 institute
Show, the region of hollow out need to be set on table top in MWT battery punching dot matrix corresponding position, as shown in Figure 2.It can be produced in drill process
Raw silicon residue dust, as production capacity is promoted, silicon wafer thickness is reduced, and influence of the dust to processing procedure fragment rate gradually protrudes.How to drop
The influence that low laser boring originally proposes effect to producing line index, drop is particularly important.
Summary of the invention
The deficiency of the present invention regarding to the issue above proposes that a kind of MWT laser boring reduces crack and is suitble to thin slice production
Method and device.
It is as follows that the present invention provides technical solution: a kind of MWT laser boring table top, the punching station face includes table-board body,
It is divided into solid area and vacancy section in the table-board body, the vacancy section is distributed at the punch position of laser hole, described solid
Area is distributed in the non-perforated place in the hollowed out area, and vacuum stomata is distributed on the solid area.
Further, the laser hole is uniformly distributed in the table-board body in rectangular, and in whole laser holes
Integral outer edge is solid area, and the solid area forms a closed curve outside punch position；It is whole in the laser hole
Inside, also have solid area, if whole laser holes are divided into stem portion by the solid area, the solid area inside laser hole and outer
The solid area at portion edge mutually together with.
Further, the solid area is distributed in the table-board body in sphere of movements for the elephants type.
Further, it is table top pedestal in the lower section of the punching table top, vacuum air-channel is installed in the table top pedestal,
The vacuum air-channel is corresponding with the solid area, and vacuum gas cell distribution meets needed for processing procedure process in vacuum air-channel
Silicon wafer adsorption entails.
As a preference, being evenly distributed with 42 vacuum stomatas in the solid area.
Based on a kind of above-mentioned MWT laser boring table top, the present invention also provides laser boring techniques, to MWT solar-electricity
Before the punching of pond piece, the table top panel for being first related to MWT laser boring process carries out substantially hollow processing, and table top is processed as being divided into
Solid area and vacancy section；Vacancy section is processed as to the workspace of drilling technology, processes vacuum stomata in solid area, also,
Solid area corresponding position below table top, installs vacuum air-channel.
Further, the laser hole is uniformly distributed in the table-board body in rectangular, and in whole laser holes
Integral outer edge is solid area, and the solid area forms a closed curve outside punch position；It is whole in the laser hole
Inside, also have solid area, if whole laser holes are divided into stem portion by the solid area, the solid area inside laser hole and outer
The solid area at portion edge mutually together with.
As a preference, the solid area is distributed in the table-board body in sphere of movements for the elephants type.
The invention has the following beneficial effects:
1. a table top greatly reduces silicon wafer and mesa contact area, influence of the dust to silicon wafer is effectively reduced, so as to effective
Reduce processing procedure fragment rate and crack.
2. table top sets sufficient amount of vacuum hole, it is ensured that silicon wafer absorption is unchanged.
3. the method, which has, puts into small, quick advantage compared with being optimized by high power deduster and dust pelletizing system.
Detailed description of the invention
Fig. 1 is the schematic diagram of the laser boring of MWT battery；
Fig. 2 is the schematic diagram of conventional MWT battery laser boring table top；
Fig. 3 is the schematic diagram of MWT battery laser boring pattern of the present invention；
Wherein: 1- laser boring table top, 2- solid area, the vacancy section 3-, 4- vacuum stomata.
Specific embodiment
Now technical solution of the present invention is completely described in conjunction with attached drawing.It is described below only of the invention one
Part case study on implementation, and it is not all.Based on the case study on implementation in the present invention, those skilled in the art are not making creation
Property labour under the premise of every other case study on implementation obtained, belong within the scope of the present invention.
As shown in figure 3, the present invention provides a kind of MWT laser boring table top, the punching station face includes table-board body, described
It is divided into solid area 2 and vacancy section 3 in table-board body, the vacancy section 3 is distributed at the punch position of laser hole, the solid area
2 are distributed in the non-perforated place in 3 domain of vacancy section, and vacuum stomata 4 is distributed on the solid area 2.
Further, the laser hole is uniformly distributed in the table-board body in rectangular, and in whole laser holes
Integral outer edge is solid area 2, and the solid area 2 forms a closed curve outside punch position；It is whole in the laser hole
Also there is solid area 2 in the inside of body, if whole laser holes are divided into stem portion by the solid area 2, the solid area inside laser hole
2 with 2 phase of solid area of external margin together with.
Further, the solid area 2 is distributed in the table-board body in sphere of movements for the elephants type.
Further, it is table top pedestal in the lower section of the punching table top, vacuum air-channel is installed in the table top pedestal,
The vacuum air-channel is corresponding with the solid area 2, and vacuum stomata 4 is distributed in vacuum air-channel, needed for meeting during processing procedure
Silicon wafer adsorption entails.
As a preference, being evenly distributed with 42 vacuum stomatas 4 in the solid area 2.
In the present embodiment, by MWT laser boring table top panel as the hollow design of matrix pattern, outside matrix pattern solid area 2
Minister degree 168mm, width 10mm.In 2 inner setting of matrix pattern solid area, 42 evenly arranged vacuum stomatas 4, vacuum gas
The vacuum air-channel that hole 4 connects table top pedestal forms vacuum, meets silicon wafer adsorption entails needed for processing procedure process.
This table top greatly reduces silicon wafer and mesa contact area, influence of the dust to silicon wafer is effectively reduced, so as to have
Effect reduces processing procedure fragment rate and crack.
Embodiment 2
Based on a kind of above-mentioned MWT laser boring table top, the present invention also provides laser boring techniques, to MWT solar battery sheet
Before punching, the table top panel for being first related to MWT laser boring process carries out substantially hollow processing, table top is processed as being divided into solid
Area 2 and vacancy section 3；Vacancy section 3 is processed as to the workspace of drilling technology, processes vacuum stomata 4 in solid area 2, also,
2 corresponding position of solid area below table top, installs vacuum air-channel.
Further, the laser hole is uniformly distributed in the table-board body in rectangular, and in whole laser holes
Integral outer edge is solid area 2, and the solid area 2 forms a closed curve outside punch position；It is whole in the laser hole
Also there is solid area 2 in the inside of body, if whole laser holes are divided into stem portion by the solid area 2, the solid area inside laser hole
2 with 2 phase of solid area of external margin together with.
As a preference, the solid area 2 is distributed in the table-board body in sphere of movements for the elephants type.
The table top panel that MWT laser boring process is related to carries out substantially hollow design, such as Fig. 3.Table top is divided into solid area 2
With vacancy section 3.
The solid area 2 of table top, in the present embodiment, solid area are directly designed in laser boring dot matrix periphery and internal clearance
2 be in matrix pattern, and solid area 2 can also be other shapes, as stud, mu character shape or other types pattern are beaten with avoiding MWT laser
Hole dot matrix region, the interior sufficient amount of vacuum hole of setting of solid area 2, it is ensured that silicon wafer adsorbs indifference.
In terms of drilling technology, first table top is transformed, then implements drill process, is vacancy section other than solid area 2
3, on the one hand vacancy section 3 connects the interior zone of different MWT laser boring dot matrix, meanwhile, laser boring dot matrix outside and and silicon
The perimeter also equal hollow out of piece contact.Vacancy section 3 is substantially improved, and reduces influence of the dust to silicon wafer, to reduce system
Journey fragment rate and crack risk.
Above embodiments are used for illustrative purposes only, rather than limitation of the present invention, the technology people in relation to technical field
Member, without departing from the spirit and scope of the present invention, made various transformation or modification belong to model of the invention
Farmland.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention is not departing from the front lower of spirit and scope of the invention, and various changes and improvements may be made to the invention, and the present invention wants
Protection scope is asked to be delineated by the appended claims, the specification and equivalents thereof from the appended claims.
Claims (8)
1. a kind of MWT laser boring table top, which is characterized in that the punching station face includes table-board body, in the table-board body
It is divided into solid area and vacancy section, the vacancy section is distributed at the punch position of laser hole, and the solid area is distributed in described engrave
Non-perforated place in empty region, and vacuum stomata is distributed on the solid area.
2. a kind of MWT laser boring table top according to claim 1, which is characterized in that the laser hole is in rectangular equal
It is even to be distributed in the table-board body, and be solid area at whole laser hole integral outers edge, the solid area is punching
A closed curve is formed outside position；In the inside of the laser hole entirety, also there is a solid area, the solid area is by whole laser
If hole is divided into stem portion, the solid area of the solid area inside laser hole and external margin mutually together with.
3. a kind of MWT laser boring table top according to claim 1, which is characterized in that the solid area is in sphere of movements for the elephants type
It is distributed in the table-board body.
4. a kind of MWT laser boring table top according to claim 1, which is characterized in that in the lower section of the punching table top
For table top pedestal, vacuum air-channel is installed in the table top pedestal, the vacuum air-channel is corresponding with the solid area, vacuum gas
Pore size distribution meets silicon wafer adsorption entails needed for processing procedure process in vacuum air-channel.
5. a kind of MWT laser boring table top according to claim 1, which is characterized in that be uniformly distributed in the solid area
There are 42 vacuum stomatas.
6. a kind of laser boring technique of MWT laser boring table top according to claim 1, which is characterized in that MWT
Before solar battery sheet punching, the table top panel for being first related to MWT laser boring process carries out substantially hollow processing, by table top plus
Work is to be divided into solid area and vacancy section；Vacancy section is processed as to the workspace of drilling technology, processes vacuum stomata in solid area,
Also, vacuum air-channel is installed in the solid area corresponding position below table top.
7. drilling technology according to claim 6, which is characterized in that the laser hole is in described in rectangular be uniformly distributed in
It in table-board body, and is solid area at whole laser hole integral outers edge, the solid area forms one outside punch position
A closed curve；In the inside of the laser hole entirety, also there is solid area, whole laser holes are divided into several by the solid area
Part, the solid area of solid area inside laser hole and external margin mutually together with.
8. drilling technology according to claim 6, which is characterized in that the solid area is distributed in described in sphere of movements for the elephants type
On the ontology of face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910252756.8A CN110047795A (en) | 2019-03-29 | 2019-03-29 | A kind of MWT laser boring table top and drilling technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910252756.8A CN110047795A (en) | 2019-03-29 | 2019-03-29 | A kind of MWT laser boring table top and drilling technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110047795A true CN110047795A (en) | 2019-07-23 |
Family
ID=67275532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910252756.8A Pending CN110047795A (en) | 2019-03-29 | 2019-03-29 | A kind of MWT laser boring table top and drilling technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110047795A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114939733A (en) * | 2022-04-24 | 2022-08-26 | 武汉华工激光工程有限责任公司 | Laser processing method and device for improving quality of through hole of green ceramic chip |
| CN114939733B (en) * | 2022-04-24 | 2024-05-14 | 武汉华工激光工程有限责任公司 | Laser processing method and device for improving quality of green ceramic chip through hole |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621045B1 (en) * | 2002-07-25 | 2003-09-16 | Matsushita Electric Industrial Co., Ltd. | Workpiece stabilization with gas flow |
| CN102248301A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Crystalline silicon solar cell drilling equipment |
| KR20120013665A (en) * | 2010-08-06 | 2012-02-15 | 주성엔지니어링(주) | Particle removing apparatus in laser machining, laser scribing apparatus and method |
| CN103737184A (en) * | 2013-12-25 | 2014-04-23 | 广州兴森快捷电路科技有限公司 | Device and fixture for performing laser machining on through hole and fixture installation method |
| CN103801841A (en) * | 2014-02-26 | 2014-05-21 | 中国兵器工业集团第二一四研究所苏州研发中心 | Drilling device and method for laser-beam drilling machine |
| JP2014147938A (en) * | 2013-01-31 | 2014-08-21 | Ntn Corp | Laser scribe device |
| CN209880575U (en) * | 2019-03-29 | 2019-12-31 | 无锡日托光伏科技有限公司 | MWT laser drilling mesa |
-
2019
- 2019-03-29 CN CN201910252756.8A patent/CN110047795A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621045B1 (en) * | 2002-07-25 | 2003-09-16 | Matsushita Electric Industrial Co., Ltd. | Workpiece stabilization with gas flow |
| KR20120013665A (en) * | 2010-08-06 | 2012-02-15 | 주성엔지니어링(주) | Particle removing apparatus in laser machining, laser scribing apparatus and method |
| CN102248301A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Crystalline silicon solar cell drilling equipment |
| JP2014147938A (en) * | 2013-01-31 | 2014-08-21 | Ntn Corp | Laser scribe device |
| CN103737184A (en) * | 2013-12-25 | 2014-04-23 | 广州兴森快捷电路科技有限公司 | Device and fixture for performing laser machining on through hole and fixture installation method |
| CN103801841A (en) * | 2014-02-26 | 2014-05-21 | 中国兵器工业集团第二一四研究所苏州研发中心 | Drilling device and method for laser-beam drilling machine |
| CN209880575U (en) * | 2019-03-29 | 2019-12-31 | 无锡日托光伏科技有限公司 | MWT laser drilling mesa |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114939733A (en) * | 2022-04-24 | 2022-08-26 | 武汉华工激光工程有限责任公司 | Laser processing method and device for improving quality of through hole of green ceramic chip |
| CN114939733B (en) * | 2022-04-24 | 2024-05-14 | 武汉华工激光工程有限责任公司 | Laser processing method and device for improving quality of green ceramic chip through hole |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107475737A (en) | A kind of metal-doped NiSe2Nanometer sheet and preparation method and application | |
| CN109701558B (en) | Preparation method of plasma modified two-dimensional layered vanadium sulfide catalyst material | |
| CN102299212A (en) | Method for manufacturing crystal silicon solar cell | |
| CN104538333A (en) | Tray for eliminating warping of wafer | |
| CN110047795A (en) | A kind of MWT laser boring table top and drilling technology | |
| CN203134754U (en) | Dry etching device and lower electrode thereof | |
| CN204315534U (en) | Tray for eliminating warping of wafer | |
| CN209880575U (en) | MWT laser drilling mesa | |
| CN207338337U (en) | Improve the quartz boat of sheet resistance uniformity in boat | |
| CN203530421U (en) | Shielding tray for solar cell | |
| CN204710005U (en) | A kind of screen deck net being convenient to disassembly, cleaning | |
| CN102270701A (en) | One-step diffusion process of silicon solar cell with selective emitter | |
| CN209328868U (en) | Universal high capacity quartz boat | |
| CN110148646A (en) | A kind of silicon solar cell and preparation method thereof | |
| CN103872157B (en) | Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet | |
| CN210337234U (en) | Printing table top for preparing MWT battery | |
| CN103730188B (en) | A kind of preparation method of monocrystaline silicon solar cell front electrode silver slurry | |
| CN103659205A (en) | Minitype filter screen component preparing method for aircraft engine oil way system | |
| CN204545717U (en) | A kind of laser cutting machine of strong drawing | |
| CN103367544A (en) | Method for diffusing polycrystalline silicon battery emitter with gettering function | |
| CN203639551U (en) | Film production equipment | |
| CN112847851A (en) | Processing method of single crystal silicon rod, silicon wafer, battery piece and photovoltaic module | |
| CN207183237U (en) | Solar energy slide cassette | |
| CN201788990U (en) | Bearing device for film coating of silicon chip | |
| CN206401263U (en) | A kind of mounting seat of image intensifier Sandwich MCP |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |