CN110045535A

CN110045535A - Liquid crystal disply device and its preparation method

Info

Publication number: CN110045535A
Application number: CN201910037539.7A
Authority: CN
Inventors: 山口阳平; 铃村功
Original assignee: Japan Display Central Inc
Current assignee: Japan Display Central Inc
Priority date: 2018-01-17
Filing date: 2019-01-15
Publication date: 2019-07-23
Anticipated expiration: 2039-01-15
Also published as: JP2019124830A; CN110045535B

Abstract

The present invention relates to Liquid crystal disply device and its preparation methods.Project of the invention is to realize liquid crystal display device flexible.Solution of the invention is liquid crystal display device, it is liquid crystal display device made of liquid crystal (300) is held on display area between the counter substrate (200) that is formed by resin, the display area is formed with multiple pixels with TFT on the TFT wiring layer (60) comprising inorganic insulating membrane, the liquid crystal display device is characterized in that, lower polarizing film (401) are bonded on the TFT wiring layer (60), the liquid crystal (300) is clamped and is bonded with upper polarizer (402) on the counter substrate (200).

Description

Liquid crystal disply device and its preparation method

Technical field

The present invention relates to display device more particularly to liquid crystal display devices flexible.

Background technique

In liquid crystal display device, the pixel with pixel electrode and thin film transistor (TFT) (TFT) etc. is formed as rectangular, passes through Image is formed by the transmitance of each pixel control liquid crystal.Since liquid crystal display device is lightweight and can be presented to high-resolution Picture, purposes are popularized in various fields.In recent years, in liquid crystal display device, there is also require display device soft The curved field in property ground.

In patent document 1, following compositions are described: in order to realize liquid crystal display device flexible, being formed on glass TFT is transferred on transparent resin substrate, to realize flexible liquid crystal device.

Existing technical literature

Patent document

Patent document 1: Japanese Unexamined Patent Publication 2015-102683 bulletin

Summary of the invention

Problems to be solved by the invention

In liquid crystal display device, use TFT as the switching transistor in pixel, but uses polysilicon (poly-Si) shape When at TFT, need to anneal in 400 DEG C or more.When forming TFT using oxide semiconductor, although passing through 300 DEG C or so Annealing is also capable of forming, but in order to make stability of characteristics, needs to anneal in 350 DEG C or so.Even if manufacturing device is set as this The temperature of sample still can be higher than 350 DEG C in part.

In order to realize flexible display apparatus, need to form TFT substrate using resin, such as polyimides.Polyimides There are a variety of materials, and the heat resisting temperature of transparent polyimides is 350 DEG C or so.Therefore, it is impossible on clear polyimides TFT is formed using polysilicon, it is with high reliability, using the TFT of oxide semiconductor be also to be difficult to realize.

Project of the invention is to realize the flexible display apparatus that TFT can be formed by high-temperature technology.

Means for solving the problems

The present invention is to overcome the invention of the above subject, and main specific means is as follows.

(1) liquid crystal display device, liquid crystal to be held on display area between the counter substrate that is formed by resin At liquid crystal display device, the display area is formed with multiple pixels with TFT, the liquid crystal on inorganic insulating membrane Showing device is characterized in that, lower polarizing film is bonded on the inorganic insulating membrane.

(2) manufacturing method of liquid crystal display device, which is characterized in that polyimides is formed on the first glass substrate, The inorganic insulating membrane comprising multilayer is formed on the polyimides, the layer containing TFT is formed on the inorganic insulating membrane, with institute State the layer containing TFT it is opposed, clamping liquid crystal and configure counter substrate, the counter substrate is by being formed in the saturating of the second glass substrate Ming tree rouge is formed, and then, removes first glass substrate and the polyimides, lower polarizing film is attached at described inorganic exhausted Then velum removes second glass substrate.

(3) manufacturing method of liquid crystal display device, which is characterized in that form amorphous silicon (a-Si) on the first glass substrate Film forms the inorganic insulating membrane comprising multilayer on the Si film, and the layer containing TFT is formed on the inorganic insulating membrane, It is opposed with the layer containing TFT, clamping liquid crystal and configure counter substrate, the counter substrate is by being formed in the second glass substrate Transparent resin constitute, then, remove first glass substrate, lower polarizing film be attached at the inorganic insulating membrane or described Then Si film removes second glass substrate.

Detailed description of the invention

[Fig. 1] is the top view of liquid crystal display device.

[Fig. 2] is the A-A cross-sectional view of Fig. 1.

[Fig. 3] is the top view of the pixel portion of liquid crystal display device.

[Fig. 4] is the cross-sectional view of the pixel portion of liquid crystal display device.

[Fig. 5] is the top view of mother substrate.

[Fig. 6] is the cross-sectional view that coloring polyimides is formed on the first glass substrate.

[Fig. 7] is the cross-sectional view that TFT wiring layer is formed on coloring polyimides.

[Fig. 8] is the cross-sectional view for indicating to be formed the state after alignment films.

[Fig. 9] is the cross-sectional view fallen within liquid crystal drop in alignment films.

[Figure 10] is the cross-sectional view for being bonded the state after the counter substrate of subsidiary second glass substrate.

[Figure 11] is the cross-sectional view of the state after Figure 10 turns upside down.

[Figure 12] is the cross-sectional view for indicating to remove the state of the first glass substrate.

[Figure 13] is the cross-sectional view for indicating to remove the state of coloring polyimides by plasma ashing.

[Figure 14] is the cross-sectional view for indicating the example of plasma ashing process.

[Figure 15] is the cross-sectional view for indicating the other examples of plasma ashing process.

[Figure 16] is the cross-sectional view for indicating to remove the state after coloring polyimides.

[Figure 17] is the cross-sectional view for indicating to be pasted with the state of lower polarizing film on TFT wiring layer.

[Figure 18] is the cross-sectional view of the state after Figure 17 turns upside down.

[Figure 19] is the cross-sectional view for indicating to remove the state of the second glass substrate.

[Figure 20] is the cross-sectional view that upper polarizer is attached to the state of counter substrate.

[Figure 21] is the cross-sectional view for indicating to be formed with the state of Si film in embodiment 2, on the first glass substrate.

[Figure 22] is the cross-sectional view that the state of TFT wiring layer is formed on Si film.

[Figure 23] is the cross-sectional view for indicating to remove the state of the first glass substrate and Si film.

[Figure 24] is the top view for illustrating the liquid crystal display device of embodiment 3.

[Figure 25] is by the cross-sectional view of the state after the terminal area bending in Figure 24.

[Figure 26] is the top view for indicating the first method of embodiment 3.

[Figure 27] is by the cross-sectional view of the state after the terminal area bending in Figure 26.

[Figure 28] is the top view for indicating the second method of embodiment 3.

[Figure 29] is the cross-sectional view for indicating the intermediate process of second method of embodiment 3.

[Figure 30] is by the cross-sectional view of the state after the terminal area bending in Figure 28.

[Figure 31] is the top view for indicating the Third Way of embodiment 3.

[Figure 32] is the detailed section view of the terminal area of Figure 31.

[Figure 33] is by the cross-sectional view of the state after the terminal area bending in Figure 31.

[Figure 34] is the cross-sectional view for indicating the fourth way of embodiment 3.

[Figure 35] is the top view of embodiment 4.

[Figure 36] is the B-B cross-sectional view of Figure 35.

[Figure 37] is the rear view of embodiment 4.

Description of symbols

10 ... liquid crystal cells, 11 ... scan lines, 12 ... video signal lines, 13 ... pixels, 15 ... lead-out wires, 16 ... insulation Layer, 30 ... display areas, 40 ... terminal areas, 41 ... driving IC,

42 ... convex blocks, the wiring of 45 ... terminals, 46 ... anisotropic conductive films, 50 ... sealing materials,

60 ... TFT wiring layers, 70 ... protection resins, 90 ... glass substrates, 95 ... a-Si, 100 ... coloring polyimides, 101 ... first basilar memebranes, 102 ... second basilar memebranes, 103 ... semiconductor layers, 104 ... gate insulating films, 105 ... gate electrodes, 106 ... interlayer dielectrics, 107 ... contact electrodes, 108 ... inorganic passivating films, 109 ... organic passivation films, 110 ... public electrodes, 111 ... capacitor insulating films, 112 ... pixel electrodes, 113 ... alignment films, 130 ... through-holes, 131 ... through-holes, 132 ... through-holes, 200 ... Counter substrate, 201 ... colored filters, 202 ... black matrix"s,

203 ... outer films, 204 ... alignment films, 200 ... counter substrates, 210 ... top glass substrates, 220 ... colored filters Layer, 300 ... liquid crystal layers, 301 ... liquid crystal molecules, 401 ... lower polarizing films, 402 ... upper polarizers, 500 ... flexible printed circuit boards, 600 ... mother substrates, 700 ... plasmas, 701 ... lower electrodes, 702 ... top electrodes, 710 ... fixtures, 711 ... motors, 720 ... are covered Mould, 4021 ... adhesives, 4022 ... adhesives, AL ... differently- oriented directivity, D ... drain electrode, S ... source electrode

Specific embodiment

Hereinafter, explaining the present invention in detail using embodiment.

[embodiment 1]

Fig. 1 is the top view of liquid crystal display device applied by the present invention.Fig. 1 is used in mobile phone or tablet computer etc. The example of liquid crystal display device.In Fig. 1, TFT wiring layer 60, be formed with the counter substrate 200 of black matrix" etc. via sealing Material 50 and be bonded, be clamped with liquid crystal between TFT wiring layer 60 and counter substrate 200, in the TFT wiring layer comprising TFT, The pixel configuration of pixel electrode etc. is rectangular.

Counter substrate 200 is formed by the transparent resin such as polyimides.Upper polarizer 402 is Chong Die with counter substrate 200.This Invention is characterized in that, so-called TFT substrate is not present, and TFT wiring layer 60 is directly configured on lower polarizing film 401.Herein, institute TFT wiring layer 60 is called, is to include using basilar memebrane as the various insulating films of representative, TFT, wiring, organic passivation film, alignment films etc. Concept.

In the TFT wiring layer 60 in display area 30, scan line 11 extends on transverse direction (direction x), and in longitudinal direction (y Direction) on arrange.In addition, video signal line 12 extends in the longitudinal direction, and horizontally arrange.Believe in scanned line 11 and image The region that number line 12 surrounds is formed with pixel 13.

TFT wiring layer 60 extends to terminal area 40 from display area 30.TFT wiring layer 60 is thin layer, although flexible , but mechanicalness is weak, and therefore, lower polarizing film 401 extends to terminal area 40, also progress mechanicalness reinforcement.Terminal area 40 is taken It is loaded with driving IC41, and is connected with flexible printed circuit board 500.

Fig. 2 is the A-A cross-sectional view of Fig. 1.In Fig. 2, it is routed on the adhesives 4011 of lower polarizing film 401 configured with TFT Layer 60.Lower polarizing film 401, adhesives 4011, TFT wiring layer 60 not only extend in display area, also prolong in terminal area 40 It stretches.Counter substrate 200 is configured in part corresponding with display area 30 and is formed in the color filter layers of counter substrate 200 220.Color filter layers 220 are the concepts for including colored filter, black matrix", outer film, alignment films etc..Counter substrate 200 are formed by transparent resin.

Liquid crystal layer 300 is held between TFT wiring layer 60 and color filter layers 220.TFT is routed by sealing material 50 Layer 60 is Nian Jie with color filter layers 220, and liquid crystal 300 is sealed.Upper polarizer 402 is adhered to via adhesives 4021 Counter substrate.Liquid crystal display device overleaf has backlight, but is omitted in Fig. 2.

Fig. 3 is the top view of the display area 30 of the liquid crystal display device in the present invention.Fig. 3 is IPS (plane conversion, In Plane Switching) mode liquid crystal display device example.In Fig. 3, surrounded in scanned line 11 and video signal line 12 Region be formed with pixel electrode 112.In Fig. 3, pixel electrode 112 has 2 slits, is formed by 3 comb electrodes.Each comb teeth Electrode is bent in central vicinity.This is to make field angle characteristic more evenly.

Provide that the axis of orientation AL of the alignment films in the initial orientation direction of liquid crystal molecule is longitudinal (direction y).Comb electrodes phase The only tilt angle theta for the direction y.This is when applying voltage to be limited between pixel electrode 112 and public electrode 110 Liquid crystal molecule direction of rotation.

The angle of θ is 5 degree to 15 degree.By being bent pixel electrode 112, so that y of the direction of rotation of liquid crystal in pixel The upper side and lower side in direction is different, to make field angle more evenly.But the direction of rotation of liquid crystal molecule is in the curved of comb electrodes Pars convoluta be it is uncertain, generate so-called zone boundary (domain boundary).In the part of zone boundary, transmitance drop It is low.

In Fig. 3, semiconductor layer 103 is connect at through-hole 131 with video signal line, passes twice through the lower section of scan line 11, It is connect at through-hole 132 with contact electrode 107.Due to being formed at the position for the lower section for passing through scan line 11 in semiconductor layer 103 Therefore TFT in Fig. 2, is formed with 2 TFT in series.Alternatively, could be formed with two grid TFT.

Contact electrode 107 is connect at the through-hole 130 for being formed in organic passivation film with pixel electrode 112.In organic passivation On film, public electrode 110 is formed as planar (except 130 part of through-hole).It is exhausted in the capacitor that covering public electrode 110 is formed Pixel electrode 112 is formed on velum.

Fig. 4 is the cross-sectional view of display area corresponding with Fig. 3.As shown in figure 4, not using TFT substrate in the present invention.Such as As illustrated by hereinafter, in the initial stage, the TFT wiring layer for being formed with TFT, wiring layer is formed in glass substrate and coloring On polyimides, glass substrate and coloring polyimides are then removed, lower polarizing film is attached at TFT cloth instead of glass substrate Line layer.

Use the flexible display apparatus of transparent resin substrate that can not be formed due to the limitation of resin substrate heat resisting temperature The TFT of poly-Si is used.In the present invention, use coloring polyimides as TFT substrate in manufacturing process, due to The heat resisting temperature of color polyimides is higher than clear polyimides, therefore can form TFT using poly-Si.

In addition, oxide semiconductor can be used in the present invention.The reliability of oxide semiconductor is and in high annealing It improves.It using composition of the invention, still is able to anneal in high temperature when using oxide semiconductor, therefore, can be used can The TFT high by property.In addition, the TFT using a-Si (amorphous silicon) can also be made in the present invention.

TFT in Fig. 4 is so-called top gate type TFT as used semiconductor and has used poly-Si.Another party Face in the case where using a-Si semiconductor, uses the TFT of so-called bottom gate mode more.In addition, oxide semiconductor can be used for appointing A kind of situation.In following explanation, it is illustrated by used the TFT in a manner of top-gated the case where as an example, but using In the case where the TFT of bottom gate mode, the also applicable present invention.

In Fig. 4, the first basilar memebrane 101 is formed by such as silicon nitride (hereinafter being represented by SiN), the second basilar memebrane 102 by Such as silica (hereinafter being represented by SiO) is formed.First basilar memebrane with a thickness of such as 100nm, the thickness of the second basilar memebrane For 300nm.Formed by CVD (chemical vapor deposition, Chemical Vapor Deposition).In the present invention, due to Therefore the lower section of basilar memebrane is important there is no TFT substrate by basilar memebrane bring barrier properties.

In order to improve the barrier properties of basilar memebrane, existing for example makes basilar memebrane become 3 layers of knot as SiO clamping SiN The case where structure.In this case, for example, lower layer's SiO film is 300nm, SiN film 100nm, upper layer SiO film is 300nm.SiO Film and SiN film can be continuously formed by CVD.In Fig. 4, TFT is formed by poly-Si, but there is also TFT partly to be led by oxide The case where body formation.The hydrogen reduction that oxide semiconductor is discharged from SiN, therefore, it is impossible to keep oxide semiconductor direct with SiN Contact.Under such circumstances, the top layer of basilar memebrane is SiO.

In addition, existing other than SiO film, SiN film to improve barrier properties, aluminium oxide is added in also basad film The case where (hereinafter being represented by AlO).AlO film is formed by sputtering.AlO film is preferably formed before forming SiO film and SiN film. AlO film is formed as the film thickness of such as 50nm or so.

In Fig. 4, semiconductor layer 103 is formed on the second basilar memebrane 102.For the semiconductor layer 103, pass through CVD Si film is formed on the second basilar memebrane 102, and poly-Si film is translated by laser annealing.By photoetching process to this Poly-Si film is patterned.

Gate insulating film 104 is formed on semiconductor film 103.The gate insulating film 104 is with TEOS (orthosilicic acid tetrem Ester, Tetraethyl Orthosilicate) SiO film as raw material.The film is also to be formed by CVD.It is rectangular on it At gate electrode 105.Gate electrode 105 is used as scan line 11 shown in FIG. 1 simultaneously.Gate electrode 105 is formed by such as MoW film.It is needing When reducing the resistance of gate electrode 105 or scan line 10, use clamps gate electrode made of Al alloy with Ti etc..

Gate electrode 105 is patterned by photoetching process, in the patterning, using ion implanting by impurity such as phosphorus or boron Poly-Si layers are doped into, forms source electrode S or drain D in poly-Si layers.

Then, interlayer dielectric 106 is formed using SiO or SiN covering grid electrode 105.Interlayer dielectric 106 is used for will Gate electrode 105 and contact electrode 107 insulate, or scan line 11 and video signal line 12 are insulated.In interlayer dielectric 106 and The through-hole 131 for video signal line 12 to be connect with semiconductor layer 103 is formed on gate insulating film 104, also, is formed and be used for The through-hole 132 that semiconductor layer 103 is connect with contact electrode 107.

It is formed with two grid TFT between video signal line 12 and contact electrode 107, the two grid TFT is to make Semiconductor layer 103 passes twice through the lower section of scan line 11 and is formed.For in interlayer dielectric 106 and gate insulating film 104 The middle photoetching for forming through-hole 131,132 can be implemented simultaneously.

Contact electrode 107 is formed on interlayer dielectric 106.Contact electrode 107 via through-hole 130 and and pixel electrode 112 connections.Contact electrode 107 and video signal line 12 are formed simultaneously within the same layer.In order to reduce contact electrode 107 and image Such as AlSi alloy can be used in the resistance of signal wire (hereinafter being represented by contact electrode 107).Due to AlSi alloy can generate it is convex Other layers can be diffused to by playing object (hillock) or Al, therefore, using using by formation such as such as Ti or MoW barrier layer, And the structure of coating clamping AlSi.

Inorganic passivating film 108 is coated in such a way that covering contacts electrode 107, protection TFT is whole.Inorganic passivating film 108 with First basilar memebrane 101 etc. is formed likewise by CVD.Organic passivation film 109 covers inorganic passivating film 108 and is formed.It is organic blunt Change film 109 to be formed by transparent photosensitive acrylics.Since organic passivation film is formed after the completion of TFT, so not There are problems that heat resistance, therefore transparent resin can be used.

Other than acrylic resin, organic passivation film 109 can also be by organic siliconresin, epoxy resin, polyimides tree The formation such as rouge.Organic passivation film 109 has the effect as planarization film, therefore is formed thicker.The film of organic passivation film 109 Thickness is 1.5~4.5 μm, is in most cases 2 μm or so.

In order to obtain pixel electrode 112 and contact the conducting of electrode 107, through-hole 130 is formed on organic passivation film 109. Then ITO (tin indium oxide, Indium Tin Oxide) as public electrode 110 is formed by sputtering, and with from through-hole 130 And its mode of periphery removing ITO is patterned.Public electrode 110 can each pixel to collectively form be planar.

Then, the SiN as capacitor insulating film 111 is formed in entire surface by CVD.Then, in through-hole 130, Through-hole is formed on capacitor insulating film 111 and inorganic passivating film 108, to obtain the conducting of contact electrode 107 and pixel electrode 112. Capacitor insulating film 111 forms storage capacitance, therefore referred to as capacitor insulating film between public electrode 110 and pixel electrode 112.

Then, ITO is formed by sputtering, is patterned and forms pixel electrode 112.The shape of pixel electrode 112 is such as Shown in Fig. 2.Aligning film material is coated on pixel electrode 112 using flexible printing or ink-jet etc., is burnt into and is formed and taken To film 113.In the orientation process of alignment films 113, other than friction method, it is possible to use utilize the light orientation of polarisation ultraviolet light.

When applying voltage between pixel electrode 112 and public electrode 110, power line as shown in Figure 4 is generated.Utilize this Electric field rotates liquid crystal molecule 301, and the amount of the light by liquid crystal layer 300 is controlled for each pixel, image is consequently formed.

In Fig. 4, clamps liquid crystal layer 300 and be configured with counter substrate 200.Counter substrate is formed by transparent resin.Due to There is no high-temperature technology in counter substrate side, therefore, transparent resin, such as clear polyimides can be used.In addition, being such as explained later As, no birefringent material also may be selected.Counter substrate with a thickness of 5 μm to 10 μm.

In the inside of counter substrate 200, it is formed with colored filter 201.Colored filter 201 is formed on each pixel There is the colored filter of red green, blue, color image is consequently formed.In colored filter 201 and colored filter 201 Between formed black matrix" 202, improve the contrast of image.

It covers colored filter 201 and black matrix" 202 and is formed with outer film 203.Due to colored filter 201 and black Bumps are presented in the surface of colour moment battle array 202, therefore, so that surface is become flat using outer film 203.On outer film 203, is formed and used In the alignment films 204 for the initial orientation for determining liquid crystal.The orientation process of alignment films 204 and the alignment films 113 of 100 side of TFT substrate It is used in the same manner friction method or optical alignment method.

For liquid crystal display device, the inefficient in the case where manufacturing one by one, therefore, with the following method: manufacture Mother substrate comprising many liquid crystal cells in the completed separates each liquid crystal cells from mother substrate.Fig. 5 is mother substrate 600 Example.The example of Fig. 5 is the example that 60 liquid crystal cells 10 are formed on 1 mother substrate 600.Liquid crystal shown in Fig. 1 It, can liquid crystal cells 10 of the forming quantity far more than 60 on mother substrate 600 in the case where showing device.

Fig. 6 to Figure 20 is the figure for indicating the manufacturing process for realizing liquid crystal display device shown in Fig. 1 to 4.For this For liquid crystal display device in invention, in manufacturing process, using the coloring polyimides being formed on glass substrate, and Glass substrate and coloring polyimides are removed after the completion of liquid crystal display device.Fig. 6 to Figure 12 is processed with the state of mother substrate, Each liquid crystal display device is directed to after Figure 13 to be processed.

Fig. 6 is the cross-sectional view for indicating to be formed with the state of coloring polyimides 100 on glass substrate 90.Glass substrate With a thickness of such as 0.5mm or 0.7mm.Coloring polyimides 100 is formed on glass substrate 90 with 5 to 10 μm of thickness.Coloring Polyimides 100 be by using the coatings such as slit coater as liquid precursor, be then burnt into and carry out imidization and shape At.The heat resisting temperature for colouring polyimides 100 is higher than clear polyimides, with such as 400 DEG C or more of heat resisting temperature.

Fig. 7 is the cross-sectional view for indicating to be formed with the state of TFT wiring layer 60 on coloring polyimides 100.TFT wiring layer 60 be the concept for including the basilar memebrane 101 in Fig. 4 to pixel electrode 112.In Fig. 7, for the sake of convenient, TFT wiring layer 60 is divided it be Basilar memebrane 61 and the top upper layer 62 Bi Qi are illustrated.

Since coloring polyimides 100 can be stripped later, the barrier properties of basilar memebrane 61 are important.Base Counterdie 61 includes the laminate film of SiO film and SiN film, is formed by multilayer inorganic insulating membrane.For basilar memebrane 61, there are lower layers The case where the case where for SiN film, upper layer being SiO film, there is also lower layer be SiO film, upper layer is SiN film.In addition, basilar memebrane 61 The case where in the presence of the composition for clamping SiN film with SiO film.Anyway, the continuous landform of CVD can be passed through on coloring polyimides At SiO film and SiN film.

There is also also include AlO film to basilar memebrane 61.In this case, pass through example on coloring polyimides 100 Such as sputtering forms AlO, forms SiO film and SiN film by CVD on it.AlO film is formed as 10nm to 50nm or so.It needs It is bright, although AlO film and the bonding force of coloring polyimides 100 are stronger, can simply be carried out to boundary's surface irradiation laser Removing.

The case where poly-Si is used in the formation on the upper layer 62 being formed on basilar memebrane 61, especially in semiconductor layer Under, in the annealing of semiconductor layer, although coloring polyimide substrate 100 experienced 400 DEG C or more of high temperature, colour polyamides Imines 100 has 400 DEG C or more of heat resistance.In addition, using oxide semiconductor as in the case where semiconductor layer, if can It anneals in 400 DEG C or more of high temperature, then the reliability of the characteristic of oxide semiconductor also improves.

Fig. 8 is to indicate to be formed with the section view for the state for making the alignment films 113 of liquid crystal aligning on TFT wiring layer 60 Figure.Hereafter in figure, there is also make TFT wiring layer 60 include alignment films 113.

Fig. 9 is to indicate to drip in the boundary formation sealing material 50 of liquid crystal cells, by liquid crystal 300 in by sealing material 50 The cross-sectional view of the state in the region surrounded.There is also be formed in 200 side of counter substrate to sealing material 50.Such case Under, liquid crystal 300 is dripped in 200 side of counter substrate.

Figure 10 be indicate will the counter substrate 200 that be additionally formed via sealing material 50 and with coloring 100 side of polyimides The cross-sectional view of the state of bonding.Liquid crystal 300 is clamped between alignment films 113 and alignment films 204.The system of 200 side of counter substrate It is as follows to make technique.Firstly, the thickness on the glass substrate 210 with a thickness of 0.5mm or 0.7mm with 5 to 10 μm forms opposed base Plate 200, the counter substrate are formed by transparent resin, such as clear polyimides.It is formed in counter substrate 200 colored Filter layer 220.Color filter layers 220 are comprising colored filter 201, the black matrix" 202, outer film 203 in Fig. 4 It constitutes.Also, alignment films 204 are formed in color filter layers 220.Hereafter in figure, there is also make color filter layers 220 The case where including alignment films 204.

Figure 11 is the figure that Figure 10 turns upside down.Although the structure of Figure 11 turns upside down, structure and Figure 10 The structure of middle explanation is identical.In the state of Figure 11, swash to the boundary irradiation of glass substrate 90 and coloring polyimides 100 Light is separated glass substrate 90 and coloring polyimides 100 by so-called laser ablation.

Figure 12 is the cross-sectional view for indicating the state for removing glass substrate 90 by laser ablation.In Figure 12, for coloring The state that polyimides 100 exposes.It is processed before removing glass substrate 90 with the state of mother substrate 600.Then, pass through Cutting etc. cuts out from mother substrate 600 and separates each liquid crystal cells 10.

Figure 13 is to indicate to remove coloring polyimides 100 for each liquid crystal cells 10 by Oxygen plasma ashing PA State cross-sectional view.The condition of Oxygen plasma ashing is such as O₂Flow 3000sccm (standard cubic centimeters per minute, Standard Cubic Centimeter per Minutes), 1800Torr, 2kW, 250 DEG C.If such condition, then can Enough rates with 10 μm/minute will colour the ashing of polyimides 100 and remove.

Figure 14 is the cross-sectional view for indicating the device of plasma ashing.The figure of the upside of Figure 14 is to indicate liquid crystal cells 10 It is placed in the cross-sectional view of the state on lower electrode 701.In Figure 14, it is opposed with liquid crystal cells 10 and configured be used to form etc. from The upper electrode 702 of daughter.The figure of the downside of Figure 14 be indicate to press with fixture 710 periphery of liquid crystal cells 10, utilize etc. from Daughter 700 removes the cross-sectional view of the state of the coloring polyimides 100 on the surface of liquid crystal cells 10.

Liquid crystal cells 10 are formed with sealing material 50 on periphery, but presence leads to sealing material 50 because of plasma 700 The danger being damaged.This danger in order to prevent, using fixture 710 while pressing the periphery of liquid crystal cells 10, so that Plasma 700 will not reach the mode of sealing material 50 and cover the sides of liquid crystal cells 10.Fixture 710 is driven by motor 711 It is dynamic.If the composition of Figure 14, then since plasma 700 does not reach the part clipped, coloring polyamides will not be removed Imines 100.That is, coloring polyimides 100 partly remains.As long as colouring the remaining part of polyimides 100 to be located at than aobvious Show that region 30 is more outward, then as will not lead to the problem of for liquid crystal display device.

Figure 15 is the cross-sectional view for indicating the other examples of device of plasma ashing.In the case where Figure 15, same needle Plasma ashing is implemented to each liquid crystal cells 10.The difference of Figure 15 and Figure 14 is do not have on the periphery of liquid crystal cells 10 Fixture, but it is formed with mask 720.Since mask 720 covers the entire side of liquid crystal cells 10, for sealing material 50 protecting effect is more excellent.In addition, if mask 720, then can according to the region of desired residual coloring polyimides 100 and Simply change shape.

Figure 14 and Figure 15 implements plasma ashing using fixture 710 or mask 720, but can not be from being jammed or shelter Part removes coloring polyimides 100.The case where plan removes coloring polyimides 100 from the entire surface of liquid crystal cells 10 Under, liquid crystal cells 10 are simply placed on lower electrode 701.

Figure 16 is the cross-sectional view for indicating to have removed the state of coloring polyimides 100.In Figure 16, the thickness of TFT wiring layer 60 Even if degree includes that most thick organic passivation film is also only several μm, mechanicalness is extremely weak.Therefore, in this case, operation is difficult 's.

Therefore, as shown in figure 17, lower polarizing film 401 is attached at TFT wiring layer 60.The thickness of the main body of polarizing film 401 It is 100 μm or so, the adhesives for attaching is 10 μm or so.It therefore, is sufficient as reinforcement material.Polarizing film 401 It is the necessary element for liquid crystal display device, therefore, attaching polarizing film not will lead to technique burden increase.

Figure 18 be represent processing 200 side of counter substrate and by the cross-sectional view of Figure 17 state to turn upside down.Figure 18 is only It is that Figure 17 turns upside down, structure is identical as Figure 17.In Figure 18, swash to the irradiation of the interface of counter substrate 200 and glass substrate 210 Light removes glass substrate 210 from counter substrate 200 by laser ablation.Figure 19 is to indicate to remove glass from counter substrate 200 The cross-sectional view of the state of substrate 210.

Figure 20 be indicate by upper polarizer 402 be attached at remove glass substrate 210 after formed by transparent resin it is opposed The cross-sectional view of the state of substrate 200.Upper polarizer 402 is only attached at part corresponding with counter substrate 200.On the other hand, under Polarizing film 410 is also attached at terminal area 40 other than display area 30.This is in order to which mechanicalness reinforces terminal area 40.It needs It is noted that reinforcing terminal area 40 with other methods by benefit, lower polarizing film 401 can also as shown in embodiment 3,4 etc. As the composition for being only attached at display area 30.

Plasma ashing in Figure 13 is implemented for each liquid crystal cells 10, but if device allows, then may be used Implement plasma ashing in the state of mother substrate 200, is then separated into each liquid crystal cells 10.It in this case, can be from The entire surface of liquid crystal cells 10 removes coloring polyimides 100, and remains a part coloring polyimides 100 if necessary, makes Implement to be ashed with mask.

In this way, in accordance with the invention it is possible to forming liquid crystal display device flexible in the case where no TFT substrate.Therefore, Liquid crystal display device can relatively be thinly formed.It should be noted that being typically used as the clear polyimides of TFT substrate with two-fold Penetrate characteristic.Therefore, by the light of clear polyimides by delay (retardation).The birefringence n of clear polyimides It is 0.005.Clear polyimides with a thickness of 10 μm when, the amount Δ nd of delay is 50nm.That is, due to the influence, occur by The caused contrast that emerges of black reduces.

In the present invention, since there is no the TFT substrate formed by polyimides, therefore, above-mentioned prolong can be prevented Late, so as to maintaining high contrast.It should be noted that there is pair being formed by resin in counter substrate side in the present invention Set substrate 200.But since high-temperature technology is not present in 200 side of counter substrate, the selection of resin has freedom degree. That is, may be selected that birefringent or birefringent small transparent resin material is not present.Therefore, it can become and prevent contrast reduction It constitutes.

[embodiment 2]

In embodiment 1, in manufacturing process, coloring polyimides is formed on the glass substrate, and in coloring polyimides Upper formation basilar memebrane, TFT etc. finally remove glass substrate, also, remove coloring polyimides by plasma ashing.

In the present embodiment, in manufacturing process, without using coloring polyimides, but Si film 95 is used.If using a- Si film 95 then can also remove Si film 95 while removing glass substrate 90 by laser ablation, therefore, can omit Plasma ashing technique.

Figure 21 to 23 is the cross-sectional view for illustrating the manufacturing process of embodiment 2.Figure 21 is to indicate to be formed on glass substrate 90 There is the cross-sectional view of the state of Si film 95.Si film 95 is formed as the thickness of such as 50nm.Figure 22 is to indicate on Si film 95 It is formed with the cross-sectional view of the state of TFT wiring layer 60.The composition illustrated in the composition of TFT wiring layer 60 and embodiment 1 is identical.Figure In 22, compared with Fig. 7 of embodiment 1, a-Si95 is formed with instead of coloring polyimides 100.

The technique of Fig. 8 to Figure 11 of embodiment 1 is also identical in example 2.That is,

Coloring polyimides is replaced into for Fig. 8 in embodiment 1 into Figure 11 the composition of a-Si in embodiment 2.

Figure 23 is the cross-sectional view for indicating to remove the state of glass substrate 90 by laser ablation in embodiment 2.At this point, by a- Si film 95 removes together with glass substrate 90.The technique that therefore, there is no need to plasma ashing.Other are constituted and embodiment 1 Figure 12 is identical.

In Figure 23, Si film 95 is removed together with glass substrate, but since the bonding force of a-Si and glass is not strong, The case where being attached to basilar memebrane side there are Si film 95 after laser ablation.Even in this case, since a-Si is transparent , therefore still image will not be impacted.

Subsequent technique in embodiment 2 is identical as Figure 16 of embodiment 1 to Figure 20.Also, liquid crystal display panel is completed Composition afterwards is also identical as the composition illustrated in Fig. 1 to Fig. 4.In addition, the effect of embodiment 2 also with the effect that illustrates in embodiment 1 Fruit is identical.

[embodiment 3]

According to liquid crystal display device, exist by make display area 30 keep flat, bending terminal region 40 carry out using Come reduce display device shape application method.Figure 24 is the top view for indicating such liquid crystal display device.In Figure 24, Terminal area 40 is formed with the TFT wiring layer 60 extended from display area 30.Also, it is connected in terminal area 40 flexible Circuit board 500.In Figure 24, in order not to interfere the bending at terminal area 40, driving IC41 is equipped on flexible printed circuit board 500。

For the composition of embodiment 1 and 2, lower polarizing film 401 also extends to terminal area 40.Therefore, mechanical strength It is also maintained in terminal area 40, but since the mechanical strength of polarizing film 401 is strong, accordingly, it is difficult to make it with small curvature half Diameter bending.Although lower polarizing film can be made to be not extend to terminal area 40, if doing so, the mechanical strength of terminal area 40 Become extremely weak.Figure 25 is the cross-sectional view for indicating such situation.

In Figure 25, terminal area 40 is only made of TFT wiring layer 60.Even if the thickness tt of TFT wiring layer 60 is being attached with It is total to be also only several μm in the case where the thickness of machine passivating film 109.Therefore, it is impossible to which the high display device of Mechanical Reliability is made.

Figure 26 and Figure 27 is the figure for indicating the composition of first case take some countermeasures to this, the present embodiment.Figure 26 is to indicate The top view of the first case of embodiment 2.In Figure 26, counter substrate 200 extends in terminal area 40.Counter substrate 200 extends The terminal part connected to flexible printed circuit board 500.In Figure 26, the machine of terminal area 40 is maintained using counter substrate 200 Tool intensity.Since counter substrate 200 is formed by the polyimide substrate for example with a thickness of 5 to 10 μm, it can be fully Maintain mechanical strength and flexibility.

Figure 27 is to indicate the cross-sectional view of the state after 40 bending of terminal area in the liquid crystal display device shown in Figure 26. In Figure 27, the terminal area 40 of liquid crystal display device is bent over.Even if the thickness tt1 of terminal area 40 counts the thickness of counter substrate Degree is also only 15 μm hereinafter, therefore, can fully reduce the radius of curvature of bending.

In Figure 27, the front end of flexible printed circuit board 500 is Chong Die with counter substrate 200.Flexible printed circuit board 500 is not right It sets in the front end of the terminal area 40 of the covering of substrate 200 and is electrically connected with TFT wiring layer 60.If the composition of Figure 27, then can The mechanical strength of terminal area 40 is maintained, and bending can be carried out with small radius of curvature.

Figure 28 is the top view for indicating the second method of embodiment 3.Figure 28 is distinguished as with Figure 26's as first method, Coloring polyimides 100 remains on terminal area 40, strengthens the mechanical strength of terminal area 40.Correspondingly, in terminal area Counter substrate 200 is not present in 40 upside.Counter substrate 200 is only formed in display area.Coloring polyimides 100 can pass through Masking is wanted remaining part and is formed when plasma ashing removes coloring polyimides 100 from display area 30.

Figure 29 is the cross-sectional view for indicating the feature of second method.In Figure 29, coloring polyimides 100 remains on terminal area 40 lower surface.Since coloring polyimides 100 is removed from display area 30, display quality will not be damaged.Separately Outside, since coloring polyimides 100 is formed in the back side of terminal area 40, the company of flexible printed circuit board 500 will not be interfered It connects.

It is using sealing material 50 that TFT wiring layer 60 is be bonded with counter substrate 200 in Figure 29, liquid crystal is sealed in inside 300.It is Chong Die with sealing material 50 under vertical view to colour polyimides 100.This is to generate to only have TFT wiring layer 60 in order to prevent Part.As long as the range d1 Chong Die with coloring polyimides 100 of sealing material 50 is until being the width for reaching sealing material 50 There is no problem.

Figure 30 is to indicate the cross-sectional view of the curved state of terminal area 40 of the liquid crystal display device of Figure 28 and Figure 29.On Polarizing film 402 and lower polarizing film 401 are accordingly configured with display area 30, will not be impacted to the bending of portion of terminal 40. There is coloring polyimides 100 in bending part, but colour polyimides 100 with a thickness of 5 to 10 μm, the thickness of terminal area 40 Degree tt2 is total to be also only 15 μm hereinafter, therefore, can be unquestionably with small radius of curvature bending terminal region 40.

Figure 31 to Figure 33 is the figure for indicating the Third Way of embodiment 3.Figure 31 is the liquid crystal display dress for indicating Third Way The top view set.The feature of Figure 31 is terminal area 40.As shown in figure 31, back of the flexible printed circuit board 500 in terminal area 40 Surface side connection.That is, terminal wiring is formed in the back side of terminal area 40.

Figure 32 is the cross-sectional view of Figure 31.In Figure 32, insulating layer 16 is to include basilar memebrane 101, gate insulating film 104, interlayer The composition of insulating film 106.In such as display area 30 on insulating layer 16, video signal line 12 is formed, with the video signal The lead-out wire 15 that line 12 connects extends in terminal area 40.Also, in terminal area 40, lead-out wire 15 is exhausted via being formed in The through-hole of edge layer 16 and the back side for being exposed to insulating layer 16.Even if the laminated meter of insulating layer 16 3 is also only 1 μm or so.Terminal area 40 through-hole can be simultaneously formed with when display area 30 forms through-hole.

In Figure 32, the counter substrate 200 formed by transparent resin is formed under vertical view to the end of terminal area 40.Cause This, can ensure the mechanical strength of terminal area 40 using counter substrate 200.In Figure 32, flexible printed circuit board 500 is in insulating layer 16 back side connection, therefore, even if forming counter substrate 200 to the end of terminal area 40, flexible printed circuit board 500 Still there is no problem for connection.

Figure 33 is the cross-sectional view for making the curved state of terminal area 40 in the composition for indicate Figure 32.Due to counter substrate 200 With a thickness of 5 μm to 10 μm, the thickness tt3 of terminal area 40 is total to be also only 15 μm hereinafter, will not hinder with small radius of curvature Bending terminal region 40.In addition, as shown in figure 33, even if making counter substrate 200 extend to the end of terminal area 40, still not It can interfere the connection of flexible printed circuit board 500.

Figure 34 is the cross-sectional view for indicating the fourth way of embodiment 3.Figure 34 be for Figure 25 composition, mechanicalness will be used for The resin 70 of reinforcement is coated on composition made of terminal area 40.As resin material, can be used silicone resin, acrylic resin, Epoxy resin etc., and if ultraviolet curable resin, then operability is excellent.

In Figure 34, the end of resin 70 is Chong Die with counter substrate 200 or upper polarizer 402 in display area side, so that tree Rouge 70 will not resist bending stress and remove from terminal area 40.In addition, in 500 side of flexible printed circuit board and flexible printed circuit board 500 end overlapping.In Figure 34, counter substrate 200 is more protruded outward than upper polarizer 402 in most cases, therefore, resin 70 can be Chong Die with the end of counter substrate 200.

[embodiment 4]

Embodiment 4 is following compositions: in the plane, omitting terminal area 40, all configuration exists by flexible printed circuit board etc. The back side of liquid crystal display panel, so as to further reduce the shape of liquid crystal display device.Figure 35 is the liquid crystal of embodiment 4 The top view of display device.In Figure 35, on surface, there is no terminal area 40, flexible printed circuit boards 500 etc..Other are constituted and figure 1 is identical.

Figure 36 is the B-B cross-sectional view of Figure 35.In Figure 36, TFT substrate is not present.By basilar memebrane 101, gate insulating film 104, on the insulating layer 16 that interlayer dielectric 106 is formed, the lead-out wire 15 connecting with display area extends to interlayer dielectric 106 End near.Near the end of interlayer insulating film 106, through-hole is formed on insulating layer 16, with configuration in insulating layer 16 The driving IC41 of back side is electrically connected.

Convex block 42 in Figure 36 is used as broader sense as connection terminal.Drive the convex block 42 of IC41 via for example Through-hole is connect using anisotropic conductive film 45 etc. with lead-out wire 15.In addition, terminal wiring 45 and flexible printed circuit board 500 Also it is connected via convex block 42.If the composition of Figure 36, then terminal is formed in the back side of liquid crystal display panel, and overleaf in drive Dynamic IC41, flexible printed circuit board 500 connect, and therefore, even if not bending flexible printed circuit board 500, remaining on can be in liquid crystal Show back side configuration flexible printed circuit board 500, the driving IC41 of panel.

In Figure 36, organic passivation film 109 is formed in a manner of covering lead-out wire 15.Inorganic passivating film is omitted in Figure 36. Capacitor insulating film 111 is formed on organic passivation film 109, and alignment films 113 are formed on capacitor insulating film.

In Figure 36, formation black matrix" 202 and colored filter 201 in the counter substrate 200 being formed by resin, and Their tops are formed with outer film 203.It covers outer film 203 and is formed with alignment films 204.Sealing material 50 is by alignment films 113 It is Nian Jie with alignment films 204, liquid crystal is sealed in inside.

In Figure 36, polarizing film 402 is pasted in counter substrate 200.Upper polarizer 402 is formed to counter substrate 200 End.That is, since the surface side in display device does not have terminal area, the configuration of upper polarizer 402 to the end of display device Portion.On the other hand, it is formed with terminal in the back side of TFT wiring layer 60, therefore, configured with lower inclined in a manner of avoiding the region Shake piece 401.Since lower polarizing film 401 covers the range of display area 30, there is no problem for display quality.

Figure 37 is the rear view of Figure 35.In Figure 37, connect in addition to being formed with driving IC41, with flexible printed circuit board 500 Other than the part on the side of the terminal connect, lower polarizing film 401 covers entire surface.Terminal forming region be also it is narrow, be configured at Overlook the lower region Chong Die with sealing material 50.Lower polarizing film 401 shape in abundant range in a manner of covering display area At.As shown in figure 37, flexible printed circuit board 500 can be configured at the back side of liquid crystal display panel in the case where not bending.

Although backlight is omitted in Figure 37, backlight be configured at flexible printed circuit board 500 and liquid crystal display panel it Between.

Claims

1. liquid crystal display device, made of between liquid crystal is clamped in inorganic insulating membrane and is formed by resin counter substrate Liquid crystal display device, the inorganic insulating membrane are formed with multiple pixels with TFT, and the feature of the liquid crystal display device exists In being bonded with lower polarizing film on the inorganic insulating membrane.

2. liquid crystal display device as described in claim 1, which is characterized in that the lower polarizing film is attached at using adhesives The inorganic insulating membrane.

3. liquid crystal display device as described in claim 1, which is characterized in that the inorganic insulating membrane has silicon oxide film and nitrogen The laminate structures of SiClx film.

4. liquid crystal display device as described in claim 1, which is characterized in that the inorganic insulating membrane is clamped by silicon oxide film Silicon nitride film and constitute, the lower polarizing film is attached at the silicon oxide film.

5. liquid crystal display device as described in claim 1, which is characterized in that the inorganic insulating membrane is silicon oxide film, nitridation Silicon fiml, the laminate structures with pellumina.

6. liquid crystal display device as claimed in claim 5, which is characterized in that the lower polarizing film is attached at the aluminium oxide Film.

7. liquid crystal display device as described in claim 1, which is characterized in that the inorganic insulating membrane extends to terminal area, It is connect in the terminal area with circuit board.

8. liquid crystal display device as claimed in claim 7, which is characterized in that the lower polarizing film prolongs in the terminal area It stretches, and Nian Jie with the inorganic insulating membrane.

9. liquid crystal display device as claimed in claim 7, which is characterized in that the counter substrate is prolonged in the terminal area It stretches, and covers the inorganic insulating membrane.

10. liquid crystal display device as claimed in claim 7, which is characterized in that described inorganic exhausted in the terminal area The back side of velum is formed with polyimide film.

11. liquid crystal display device as claimed in claim 10, which is characterized in that the polyimide film with a thickness of 5 to 10 μ m。

12. liquid crystal display device as claimed in claim 7, which is characterized in that formed in the surface side of the inorganic insulating membrane The lead-out wire extended from display area, the lead-out wire via the through-hole for being formed in the inorganic insulating membrane and with it is described inorganic The terminal of the back side of insulating film connects, and the terminal is connect with the circuit board.

13. liquid crystal display device, to be formed between liquid crystal is held on inorganic insulating membrane and is formed by resin counter substrate Liquid crystal display device, the inorganic insulating membrane is formed with multiple pixels with TFT, and the feature of the liquid crystal display device exists In,

It is bonded with lower polarizing film on the inorganic insulating membrane, is not configured between the inorganic insulating membrane and the lower polarizing film Glass or polyimides.

14. liquid crystal display device as claimed in claim 13, which is characterized in that the inorganic insulating membrane extends to terminal region Domain is connect in the terminal area with circuit board, the back side shape of the inorganic insulating membrane in the terminal area At there is polyimide film.

15. the manufacturing method of liquid crystal display device, which is characterized in that

Polyimides is formed on the first glass substrate,

The inorganic insulating membrane comprising multilayer is formed on the polyimides,

The layer containing TFT is formed on the inorganic insulating membrane,

It is opposed with the layer containing TFT, clamping liquid crystal and configure counter substrate, the counter substrate is by being formed in the second glass The transparent resin of substrate is formed,

Then, first glass substrate and the polyimides are removed, lower polarizing film is attached at the inorganic insulating membrane,

Then, second glass substrate is removed.

16. the manufacturing method of liquid crystal display device as claimed in claim 15, which is characterized in that the inorganic insulating membrane includes SiO film and SiN film, the SiO film and the SiN film are formed by the way that CVD is laminated.

17. the manufacturing method of liquid crystal display device as claimed in claim 16, which is characterized in that the inorganic insulating membrane also wraps Salic film, the pellumina are formed by sputtering.

18. the manufacturing method of liquid crystal display device as claimed in claim 15, which is characterized in that removed by plasma ashing Remove the polyimides.

19. the manufacturing method of liquid crystal display device, which is characterized in that

Si film is formed on the first glass substrate,

The inorganic insulating membrane comprising multilayer is formed on the Si film,

The layer containing TFT is formed on the inorganic insulating membrane,

It is opposed with the layer containing TFT, clamping liquid crystal and configure counter substrate, the counter substrate is by being formed in the second glass The transparent resin of substrate is constituted,

Then, first glass substrate is removed, lower polarizing film is attached at the inorganic insulating membrane or the Si film,

Then, second glass substrate is removed.

20. the manufacturing method of liquid crystal display device as claimed in claim 19, which is characterized in that inorganic insulating membrane includes SiO Film and SiN film, the Si film, the SiO film, the SiN film are formed by CVD.