CN110042355A - A kind of film thermocouple and its manufacturing method with one-dimensional nano-array structure - Google Patents

A kind of film thermocouple and its manufacturing method with one-dimensional nano-array structure Download PDF

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CN110042355A
CN110042355A CN201910382177.5A CN201910382177A CN110042355A CN 110042355 A CN110042355 A CN 110042355A CN 201910382177 A CN201910382177 A CN 201910382177A CN 110042355 A CN110042355 A CN 110042355A
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film thermocouple
sputtering
dimensional nano
array structure
power
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CN110042355B (en
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罗炳威
周海涛
刘大博
罗飞
田野
陈冬生
祁洪飞
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AECC Beijing Institute of Aeronautical Materials
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G01K7/04—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples the object to be measured not forming one of the thermoelectric materials

Abstract

The invention belongs to film thermocouple technologies of preparing, are related to a kind of film thermocouple and its manufacturing method with one-dimensional nano-array structure, including substrate, form the electric arm of film thermocouple by double target magnetic control sputtering techniques in substrate；One electric arm of film thermocouple is sputtered using tin indium oxide target material and noble metal target material, it can guarantee the uniformity of precious metal doping tin indium oxide, guarantee that conduction at high temperature has biggish thermoelectricity value to export simultaneously, another electric arm of film thermocouple is sputtered using zinc oxide target and noble metal target material；And the parameter of double target magnetic control sputtering techniques is set, so that the electric arm that sputtering sedimentation is formed is one-dimensional nano-array structure.It is proposed a kind of film thermocouple with one-dimensional nano-array structure, the response speed of this film thermocouple is better than generally without the film thermocouple of special construction, while having the characteristics that thermometric is accurately and antifatigue.

Description

A kind of film thermocouple and its manufacturing method with one-dimensional nano-array structure
Technical field
The invention belongs to surface temperature measuring technologies, and being related to a kind of grow in hard or flexible substrates surface has a wiener Two kinds of thermoelectric arm films of rice array structure, to realize the temperature data for quickly, accurately obtaining the surface of solids.
Background technique
With the raising of aero-engine thrust ratio, existing Metal Substrate thermocouple probes material is difficult to adapt to high temperature, height Thermometric work under pressure, high oxidative atmosphere.For example, the film thermocouple of common Pt-Rh alloy series is being greater than 900 DEG C Under environment, Rh oxidation is serious, directly affects temperature measurement accuracy and service life, and the turbine inlet temperature of big thrust loading aero-engine is The thermometric upper limit [ChenX M, GregoryOJ, AmaniM.Thin- close or that surmounted Pt-Rh alloy series film thermocouple film thermocouples based on the system In2O3–SnO2[J].Journal of the American Ceramic Society,2011,94,854.].Therefore, existing film thermocouple is unable to satisfy the following advanced aero engine The needs of high-temperature component temperature test.With the exploitation of ceramic engine, ceramic membrane thermocouple has become research hotspot.Film The core of thermocouple is thin film thermoelectric materials, and different thermoelectric materials has different temperature use scopes.Based on aeroplane engine Machine high temperature, high pressure and oxidizable environmental quality, with high-melting-point, anti-oxidant double dominant oxide ceramics thermoelectric material at For the first choice of aero-engine temperature thermocouple, simultaneous oxidation object thermoelectric material has the thermoelectricity bigger than pure noble-metal thermocouple Gesture exports (high Seebeck coefficient), with the thermal expansion coefficient of engine ceramic heat-barrier coating more closely, at high temperature with substrate There is stronger binding force, and cost [Tougas I M, Amani M, Gregory O J.Metallic and can be greatly reduced ceramic thin film thermocouples for gas turbine engines[J].Sensors,2013,13, 15324.].It is contemplated that the anti-interference ability and essence of temperature measurement can be substantially improved in the thermocouple being made of oxide material Exactness is more able to satisfy the needs of aero-engine temperature test of new generation.Common oxide pyroelectric material is pure both at home and abroad In2O3, conductivity and Seebeck coefficient need to be further improved.In recent years, various countries scientific research personnel has found the spy of designing material Different nanostructure or the conductivity and Seebeck coefficient that thermoelectric material can be further promoted along different crystal face preferential growths, together When increased nanometer crystal boundary can significantly reduce thermal conductivity, thus obtain more excellent performance of thermoelectric material [Feng J J, Zhu W,Deng Y.An overview of thermoelectric films:Fabrication techniques, classification,and regulation methods[J].Chinese Physics B,2018,4,047210.].Base It in the thermoelectric material of excellent thermoelectricity capability, is expected to obtain the response time faster, test precision is higher (output thermoelectrical potential is high), resists The strong high temperature film thermocouple of oxidability, is the dynamic monitoring of high-temperature unit of aircraft engine temperature, and failure diagnosis provides strong Support.
High temperature involved in the application is 1000 DEG C or more.
Summary of the invention
The purpose of the present invention is: prepare a kind of fast response time, the accurate and antifatigue film thermocouple of thermometric
The technical scheme is that a kind of film thermocouple with one-dimensional nano-array structure, including substrate, in base The electric arm of film thermocouple is formed on bottom by double target magnetic control sputtering techniques；Indium oxide is used to an electric arm of film thermocouple Tin target and noble metal target material sputtering, can guarantee the uniformity of precious metal doping tin indium oxide, while guaranteeing at high temperature Conduction has biggish thermoelectricity value to export, and is splashed to another electric arm of film thermocouple using zinc oxide target and noble metal target material It penetrates；And the parameter of double target magnetic control sputtering techniques is set, so that the electric arm that sputtering sedimentation is formed is one-dimensional nano-array structure.It is one-dimensional Nano array structure can significantly improve the thermoelectricity ZT value of thermoelectric arm material, and then improve the voltage output of film thermocouple Value, improves the accuracy of thermometric, while the film that the response speed of film thermocouple can be made to be significantly higher than no special construction is warm Galvanic couple.
Further, the substrate is metal oxide or oxidation silicon material.Preferably, metal oxide is aluminium oxide. Aluminium oxide and tin indium oxide, zinc oxide have similar lattice parameter, can enhance the binding force of thermoelectric arm and substrate, guarantee heat Galvanic couple does not fail at high temperature.
Further, the substrate is hard substrate or flexible substrates.
The preparation method of above-mentioned film thermocouple, includes the following steps:
Step 1 passes through double target magnetic control sputtering technique sputtering sedimentation electric arm in substrate, uses oxygen to first electric arm Change the sputtering of indium tin target radio-frequency power and the sputtering of noble metal target material dc power, the radio-frequency power and noble metal of tin indium oxide target material The ratio between dc power of target is 4:1~5:1；To second electric arm using the sputtering of zinc oxide target radio-frequency power and noble metal target The sputtering of material dc power, the ratio between the radio-frequency power of corresponding tin indium oxide target material and dc power of corresponding noble metal target material are 4:1 ~5:1；The ratio between the radio-frequency power of oxide and dc power of corresponding noble metal target material can guarantee to aoxidize in thermoelectric arm material The component ratio of object and noble metal guarantees the temperature measurement accuracy of film thermocouple so that thermoelectricity ZT value is optimal.
This power proportions had not only guaranteed the doping ratio of noble metal but also had guaranteed to be formed the special construction of one-dimensional nano-array.
Two electric arm of sputtering sedimentation are placed in nitrogen atmosphere and anneal by step 2, improve electric arm and base by annealing The binding performance at bottom.
Step 3, magnetron sputtering deposits to form silica resistive formation in substrate, and resistive formation covering substrate and electricity Arm does not cover power connection end.Preferably, in magnetron sputtering, the coverage mask plate on power connection end.
Further, substrate heating temperature when sputtering increases simultaneously with operating air pressure or reduces simultaneously.
Further, it deposits to form power connection end in each electric arm rear end magnetron sputtering after the completion of step 2, each power connection end magnetic control Twice, first time sputtering target material is titanium for sputtering, and second of sputtering target material is noble metal, is carried out at annealing after sputtering every time Reason.This technique can make thermoelectric arm material and power connection end form Ohmic contact.
Further, the radio-frequency power is not more than 100W；The dc power is not more than 20W.
Further, SiO2Resistive formation thickness is not more than 100nm.
The invention has the advantages that proposing a kind of film thermocouple with one-dimensional nano-array structure, this thin film thermoelectric Even response speed is better than generally without the film thermocouple of special construction, while having the characteristics that thermometric is accurately and antifatigue.This Invent the response time faster, test precision is higher (output thermoelectrical potential is high), and the strong high temperature film thermocouple of oxidation resistance is High-temperature unit of aircraft engine temperature dynamic monitoring, failure diagnosis provide strong support.
Detailed description of the invention
Fig. 1 is the scanning electron microscope cross-section photographs for the Zinc oxide doped iridium that embodiment 1 is grown on alumina wafer.
Fig. 2 is the scanning electron microscope cross-section photographs for the tin indium oxide doped iridium that embodiment 1 is grown on alumina wafer.
Fig. 3 is the film thermocouple photo that embodiment 1 is grown on alumina wafer
Wherein: 1- substrate, the first electric arm of 2-, the second electric arm of 3-.
Specific embodiment
Embodiment 1: preparation has the film thermocouple of one-dimensional nano-array structure in alumina substrate
Step 1 passes through double target magnetic control sputtering technique sputtering sedimentation electric arm in substrate, uses indium oxide to first electric arm The sputtering of tin target radio-frequency power and the sputtering of iridium target dc power, the radio-frequency power of tin indium oxide target material and the direct current function of iridium target The ratio between rate is 4:1~5:1；Target-substrate distance is d=90mm；The heating temperature of alumina substrate is 250 DEG C；Ar pressure is 1Pa；It is right It is 70W that tin indium oxide target material, which applies radio-frequency power,；Applying dc power to iridium target is 15W；Sputtering sedimentation time 1h；Naturally cold But to room temperature.Second electric arm is sputtered using zinc oxide target radio-frequency power and noble metal target material dc power sputters, it is corresponding The ratio between the radio-frequency power of tin indium oxide target material and dc power of corresponding iridium target are 4:1~5:1；Target-substrate distance is d=90mm；Base 200 DEG C of bottom heating temperature；Ar pressure is 1Pa；Applying radio-frequency power to zinc oxide target is 70W；Direct current is applied to iridium target Power is 15W；Sputtering sedimentation time 1h；Cooled to room temperature is taken out
Two electric arm of sputtering sedimentation are placed in nitrogen atmosphere and anneal by step 2, and 300 DEG C of annealing temperature, when annealing Between 0.5h；
Step 3 sputters one layer of Ti metal film (general sputtering method) using electrode mask version, sputters one layer again on Ti film Pd electrode, at a temperature of 100 DEG C, annealing time 0.5h.
Step 4, magnetron sputtering deposits to form silica resistive formation in substrate, and resistive formation covering substrate and electricity Arm does not cover power connection end.
Embodiment 2: preparation has the film thermocouple of one-dimensional nano-array structure in oxidation silicon base
Step 1 passes through double target magnetic control sputtering technique sputtering sedimentation electric arm in substrate, uses indium oxide to first electric arm The sputtering of tin target radio-frequency power and the sputtering of iridium target dc power, the radio-frequency power of tin indium oxide target material and the direct current function of iridium target The ratio between rate is 4:1~5:1；Target-substrate distance is d=70mm；The heating temperature for aoxidizing silicon base is 200 DEG C；Ar pressure is 0.5Pa； Applying radio-frequency power to tin indium oxide target material is 100W；Applying dc power to iridium target is 20W；Sputtering sedimentation time 1h；From So it is cooled to room temperature.Second electric arm is sputtered using zinc oxide target radio-frequency power and noble metal target material dc power sputters, The ratio between the radio-frequency power of corresponding tin indium oxide target material and dc power of corresponding iridium target are 4:1~5:1；Target-substrate distance is d= 70mm；200 DEG C of substrate heating temperature；Ar pressure is 0.5Pa；Applying radio-frequency power to zinc oxide target is 90W；To iridium target Application dc power is 20W；Sputtering sedimentation time 1h；Cooled to room temperature is taken out
Two electric arm of sputtering sedimentation are placed in nitrogen atmosphere and anneal by step 2, and 500 DEG C of annealing temperature, when annealing Between 2h；
Step 3 sputters one layer of Ti metal film (general sputtering method) using electrode mask version, sputters one layer again on Ti film Pt electrode, at a temperature of 100 DEG C, annealing time 0.5h.
Step 4, magnetron sputtering deposits to form silica resistive formation in substrate, and resistive formation covering substrate and electricity Arm does not cover power connection end.

Claims (10)

1. a kind of film thermocouple with one-dimensional nano-array structure, it is characterised in that: including substrate, by double in substrate The electric arm of target magnetic control sputtering technique formation film thermocouple；To an electric arm of film thermocouple using tin indium oxide target material and expensive Metal targets sputtering, can guarantee the uniformity of precious metal doping tin indium oxide, at the same the conduction for guaranteeing at high temperature have it is larger The output of thermoelectricity value, another electric arm of film thermocouple is sputtered using zinc oxide target and noble metal target material；And setting is double The parameter of target magnetic control sputtering technique, so that the electric arm that sputtering sedimentation is formed is one-dimensional nano-array structure.
2. a kind of film thermocouple with one-dimensional nano-array structure as described in claim 1, it is characterised in that: the base Bottom is metal oxide or oxidation silicon material.
3. a kind of film thermocouple with one-dimensional nano-array structure as claimed in claim 2, it is characterised in that: metal oxygen Compound is aluminium oxide.
4. a kind of film thermocouple with one-dimensional nano-array structure as described in claim 1, it is characterised in that: the base Bottom is hard substrate or flexible substrates.
5. the preparation method of the film thermocouple of one of the claims 1-4, characterized by the following steps:
Step 1 passes through double target magnetic control sputtering technique sputtering sedimentation electric arm in substrate, uses indium oxide to first electric arm The sputtering of tin target radio-frequency power and the sputtering of noble metal target material dc power, the radio-frequency power and noble metal target material of tin indium oxide target material The ratio between dc power be 4:1~5:1；Second electric arm is sputtered using zinc oxide target radio-frequency power and noble metal target material is straight Flow power sputtering, the ratio between the radio-frequency power of corresponding tin indium oxide target material and dc power of corresponding noble metal target material are 4:1~5: 1；The ratio between the radio-frequency power of oxide and dc power of corresponding noble metal target material can guarantee in thermoelectric arm material oxide with The component ratio of noble metal, so that thermoelectricity ZT value is optimal, thus, guarantee the temperature measurement accuracy of film thermocouple.Meanwhile this Power proportions could not only guarantee the doping ratio of noble metal but also guarantee to be formed the special construction of one-dimensional nano-array；
Two electric arm of sputtering sedimentation are placed in nitrogen atmosphere and anneal by step 2, improve electric arm and substrate by annealing Binding performance.
Step 3, magnetron sputtering deposits to form silica resistive formation in substrate, and resistive formation covering substrate and electric arm, Do not cover power connection end.Preferably, in magnetron sputtering, the coverage mask plate on power connection end.
6. a kind of film thermocouple with one-dimensional nano-array structure as claimed in claim 5, it is characterised in that: when sputtering Substrate heating temperature increase simultaneously with operating air pressure or reduce simultaneously.
7. a kind of film thermocouple with one-dimensional nano-array structure as claimed in claim 5, it is characterised in that: step 2 In each electric arm rear end, magnetron sputtering deposits to form power connection end after the completion, each power connection end magnetron sputtering twice, first time sputtering target Material is titanium, and second of sputtering target material is noble metal, is made annealing treatment after sputtering every time.This technique can make thermoelectricity Arm material and power connection end form Ohmic contact.
8. a kind of film thermocouple with one-dimensional nano-array structure as claimed in claim 5, it is characterised in that: described to penetrate Frequency power is not more than 100W.
9. a kind of film thermocouple with one-dimensional nano-array structure as claimed in claim 5, it is characterised in that: described straight It flows power and is not more than 20W.
10. a kind of film thermocouple with one-dimensional nano-array structure as claimed in claim 5, it is characterised in that: SiO2It is high Resistance layer thickness is not more than 100nm.
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CN114717526A (en) * 2021-01-04 2022-07-08 华东师范大学 Ultrathin flexible thermocouple and preparation method thereof
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US11598676B2 (en) 2021-07-22 2023-03-07 Xi'an Jiaotong University Tungsten-rhenium composite thin film thermocouple based on surface micropillar array with gas holes

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CN111146326A (en) * 2019-12-03 2020-05-12 中国科学院微电子研究所 Thermoelectric device and preparation method thereof
CN111146326B (en) * 2019-12-03 2024-04-05 中国科学院微电子研究所 Thermoelectric device and preparation method thereof
CN111076836A (en) * 2019-12-12 2020-04-28 西安交通大学 Metal-oxide type thin film thermocouple and preparation method thereof
CN111076836B (en) * 2019-12-12 2020-10-27 西安交通大学 Metal-oxide type thin film thermocouple and preparation method thereof
CN114717526A (en) * 2021-01-04 2022-07-08 华东师范大学 Ultrathin flexible thermocouple and preparation method thereof
CN114717526B (en) * 2021-01-04 2024-03-29 华东师范大学 Ultrathin flexible thermocouple and preparation method thereof
CN113174568A (en) * 2021-04-20 2021-07-27 中国航发北京航空材料研究院 Method for preparing indium tin oxide-indium oxide film thermocouple with crystal face preferred orientation
CN113174569A (en) * 2021-04-20 2021-07-27 中国航发北京航空材料研究院 Method for preparing indium tin oxide-indium zinc oxide film thermocouple with preferred crystal orientation
CN113174568B (en) * 2021-04-20 2022-11-22 中国航发北京航空材料研究院 Method for preparing indium tin oxide-indium oxide film thermocouple with crystal face preferred orientation
US11598676B2 (en) 2021-07-22 2023-03-07 Xi'an Jiaotong University Tungsten-rhenium composite thin film thermocouple based on surface micropillar array with gas holes
CN115011915A (en) * 2022-04-22 2022-09-06 哈尔滨理工大学 Preparation method of redundant thin-film thermocouple

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