CN110034181A - A kind of iron/piezoelectricity field-effect tube and its preparation method - Google Patents
A kind of iron/piezoelectricity field-effect tube and its preparation method Download PDFInfo
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- CN110034181A CN110034181A CN201910159715.4A CN201910159715A CN110034181A CN 110034181 A CN110034181 A CN 110034181A CN 201910159715 A CN201910159715 A CN 201910159715A CN 110034181 A CN110034181 A CN 110034181A
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 230000005669 field effect Effects 0.000 title claims abstract description 48
- 229910052742 iron Inorganic materials 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 26
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 14
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- 229910002113 barium titanate Inorganic materials 0.000 claims description 8
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 8
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 17
- 230000003321 amplification Effects 0.000 abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 9
- 230000009471 action Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005621 ferroelectricity Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- DUPIXUINLCPYLU-UHFFFAOYSA-N barium lead Chemical compound [Ba].[Pb] DUPIXUINLCPYLU-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002353 field-effect transistor method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
The present invention provide a kind of iron/piezoelectricity field-effect tube and its preparation method, including substrate, source-drain electrode and grid；Grid includes: the silica from bottom to top stacked gradually, high dielectric layer, piezoelectric material layer, titanium nitride layer, ferroelectric material layer and tantalum nitride layer.The preparation method comprises the following steps: providing silicon substrate, the doped p-type ion in silicon substrate forms substrate；Source electrode and drain electrode is formed in the two sides of substrate；Above substrate, silicon dioxide layer and high dielectric layer are sequentially formed between source electrode and drain electrode；Piezoelectric material layer, titanium nitride layer, ferroelectric material layer and tantalum nitride layer are sequentially formed on high dielectric layer.The present invention is based on field effect transistor, ferroelectric material and piezoelectric material are introduced in the gate, realize the function of voltage amplification jointly using the negative capacitance effect of ferroelectric material and the electrostriction effect of piezoelectric material.The operating voltage of device is reduced, subthreshold swing is reduced, improves the ON/OFF speed of device, further decrease operating power consumption.
Description
Technical field
The present invention relates to semiconductor device design manufacturing field, more particularly to a kind of iron/piezoelectricity field-effect tube and its
Preparation method.
Background technique
With the promotion of cmos device integration density, growing power consumption will become restriction integrated circuit and further develop
Important bottleneck.It is a kind of effective hand for reducing and using power consumption that operating voltage is reduced by reducing the subthreshold swing of device
Section.Field effect transistor with negative capacitance effect is the effective technology scheme for realizing this purpose.
Subthreshold swing is reduced by the adjustment to gate oxide structure and thickness composition, channel design and material at present
Value, to reduce device power consumption.But these modes can not all make subthreshold swing be less than a 60mV/decade (quantity
Grade).
Subthreshold swing SS meets following equation:
Wherein,For the variation of gate source voltage,For the variation of silicon face potential, IdFor source-drain current,For source-drain current varied number grade, CinsTo aoxidize layer capacitance, usually positive value.It is, in general, that the limiting value of SS
About 60mV/decade.It, can be by by C but to make SS be less than 60mV/decadesBecome the mode of negative value to obtain.
Therefore it provides a kind of new field effect transistor and preparation method thereof based on negative capacitance, becomes this field urgently
The important technological problems solved.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of iron/piezoelectricity field-effect tube and
Its preparation method, for solving the problems, such as high working voltage, high power consumption in MOS device in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of iron/piezoelectricity field-effect tube, includes at least:
Substrate；Source electrode and drain electrode positioned at the substrate two sides；Grid above the substrate, between the source electrode and drain electrode；
The grid includes: the silicon dioxide layer from bottom to top stacked gradually, high dielectric layer, piezoelectric material layer, titanium nitride layer, ferroelectricity material
The bed of material and tantalum nitride layer.
Preferably, the substrate is P-type substrate.
Preferably, the high dielectric layer includes HfO2、ZrO2、Ta2O5、TiO2In any one.
Preferably, the piezoelectric material layer be electrostriction material, including aluminium nitride/gallium nitride, lead titanates, barium titanate,
Any one in lead niobate.
Preferably, the ferroelectric material layer includes HfO2、HfAlO2、HfZrO2In any one.
Preferably, the field-effect tube is NMOS tube.
A kind of preparation method of iron/piezoelectricity field-effect tube, this method at least include the following steps: Step 1: providing silicon substrate
Plate, the doped p-type ion in the silicon substrate form substrate；Step 2: forming source electrode and drain electrode in the two sides of the substrate；
Step 3: sequentially forming silicon dioxide layer and high dielectric layer between side, the source electrode and drain electrode on the substrate；Step 4:
Piezoelectric material layer, titanium nitride layer, ferroelectric material layer and tantalum nitride layer are sequentially formed on the high dielectric layer.
Preferably, the method that the silicon dioxide layer and high dielectric layer are formed in step 3 is atom deposition method.
Preferably, high dielectric layer in step 3, including HfO2、ZrO2、Ta2O5、TiO2In any one.
Preferably, the method that the piezoelectric material layer is formed in step 4 is atom deposition method.
Preferably, the method that the titanium nitride layer is formed in step 4 is physical vaporous deposition or atom deposition method.
Preferably, the method that the ferroelectric material layer is formed in step 4 is atom deposition method.
Preferably, the method that the tantalum nitride layer is formed in step 4 is physical vaporous deposition.
Preferably, piezoelectric material layer described in step 4 be electrostriction material, including aluminium nitride/gallium nitride, lead titanates,
Any one in barium titanate, lead niobate.
As described above, iron of the invention/piezoelectricity field-effect tube and its preparation method, have the advantages that this hair
It is bright to be intended to based on field effect transistor FET, introduce ferroelectric material and piezoelectric material in the gate, and with existing FET processing procedure into
Row integration realizes the function of voltage amplification using the negative capacitance effect of ferroelectric material and the electrostriction effect of piezoelectric material jointly
Energy.The operating voltage of device is reduced, subthreshold swing is reduced, improves the ON/OFF speed of device, further decrease operating power consumption.
Detailed description of the invention
Fig. 1 is shown as iron/piezoelectricity field-effect tube structural schematic diagram of the invention；
Fig. 2 is shown as iron/piezoelectricity field-effect tube preparation method flow chart of the invention.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Fig. 2.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Fig. 1 is shown as iron/piezoelectricity field-effect tube structural schematic diagram of the invention.In the present embodiment preferably, the field
Effect pipe is NMOS tube.The iron/piezoelectricity field-effect tube includes: substrate 01 in the present embodiment；Further, the substrate exists
In the present embodiment be P-type substrate, that is to say, that the formation of the P-type substrate be by the injecting p-type ion in silicon materials plate, from
And P-type substrate 01 as shown in Figure 1 is formed, therefore obtain the NMOS field-effect tube of the present embodiment.
The field-effect tube further includes the source electrode 021 and drain electrode 022 positioned at 01 two sides of substrate；It and further include being located at institute
State the grid between 01 top of substrate, the source electrode 021 and drain electrode 022；As shown in Figure 1, the grid is in the present invention at least
It include: the silicon dioxide layer 03 from bottom to top stacked gradually, high dielectric layer 04, piezoelectric material layer 05, titanium nitride layer 06, ferroelectricity material
The bed of material 07 and tantalum nitride layer 08.That is, the silicon dioxide layer 03 is located at the institute between the source electrode 021 and drain electrode 022
01 upper surface of substrate is stated, is high dielectric layer 04 in the upper surface of the silicon dioxide layer 03, in the upper table of the high dielectric layer 04
Face is piezoelectric material layer 05, is titanium nitride layer 06 in the upper surface of the piezoelectric material layer 05, in the upper of the titanium nitride layer 06
Surface is ferroelectric material layer 07, is tantalum nitride layer 08 in the upper surface of the ferroelectric material layer 07, and the tantalum nitride layer 08 is constituted
The top layer of the stepped construction.
Further, 04 material of high dielectric layer includes HfO2、ZrO2、Ta2O5、TiO2In any one.More into one
Step, the piezoelectric material layer 05 in the present embodiment is electrostriction material, and piezoelectric material has electrostriction effect, in electricity
Under the action of, material generates stress and is compressed, to change the conduction band structure of material internal, enhances charge density, to rise
To the effect of voltage amplification.Piezoelectric material layer 05 described in the present embodiment includes aluminium nitride/gallium nitride, lead titanates, barium titanate, niobium
Any one in lead plumbate.The ferroelectric material layer 07 in the present embodiment has negative capacitance effect, under the action of electric field, material
The polarization direction of material can invert, to there is voltage amplification.Therefore, the present embodiment preferably, the ferroelectricity material
The bed of material 07 includes HfO2、HfAlO2、HfZrO2In any one.
The present invention acts on the comprehensive magnification of voltage by ferroelectric material and piezoelectric material, can be effectively reduced work electricity
Pressure, while the subthreshold swing of device is reduced to 60mV/decade hereinafter, reducing device uses power consumption.
The invention also includes the iron/piezoelectricity field-effect tube preparation methods, are shown as of the invention with reference to Fig. 2, Fig. 2
Iron/piezoelectricity field-effect tube preparation method flow chart.This method at least includes the following steps:
Step 1: providing silicon substrate, the doped p-type ion in the silicon substrate forms substrate 01；That is the P
The formation of type substrate to form P-type substrate 01 as shown in Figure 1, therefore is obtained by the injecting p-type ion in silicon materials plate
To the NMOS field-effect tube of the present embodiment.
Step 2: forming source electrode 021 and drain electrode 022 in the two sides of the substrate 01, the source electrode 021 and drain electrode 022 are made
For the source electrode and drain electrode of NMOS field-effect tube；
Step 3: sequentially forming silicon dioxide layer 03 above the substrate 01, between the source electrode 021 and drain electrode 022
With high dielectric layer 04；In the present embodiment preferably, the method for the silicon dioxide layer 03 and high dielectric layer 04 is formed in step 3
To be formed using the method for atom deposition method.Further, high dielectric layer 04 includes HfO in step 32、ZrO2、Ta2O5、TiO2
In any one.High dielectric layer 04 described in the embodiment of the present invention iron/piezoelectricity field-effect tube preparation method is preferably
HfO2。
Step 4: sequentially forming piezoelectric material layer 05, titanium nitride layer 06, ferroelectric material layer 07 on the high dielectric layer 04
With tantalum nitride layer 08.That is, the silicon dioxide layer 03 is located at the substrate between the source electrode 021 and drain electrode 022
01 upper surface forms high dielectric layer 04 in the upper surface of the silicon dioxide layer 03, in the upper surface shape of the high dielectric layer 04
At piezoelectric material layer 05, piezoelectric material layer 05 described in the present embodiment is electrostriction material, and piezoelectric material has electrostriction
Effect, under the action of electric field, material generates stress and is compressed, to change the conduction band structure of material internal, enhancing charge is close
Degree, to play the role of voltage amplification.In the iron/piezoelectricity field-effect tube preparation method of the invention, the institute of step 4
Stating piezoelectric material layer is electrostriction material, including any one in aluminium nitride/gallium nitride, lead titanates, barium titanate, lead niobate
Kind.Piezoelectric material layer 05 described in the step of the present embodiment four is aluminium nitride/gallium nitride or lead titanates.
Further, the method that the piezoelectric material layer 05 is formed in step 4 is atom deposition method (ALD).In the pressure
The upper surface of material layer 05 forms titanium nitride layer 06, and the method that the titanium nitride layer is formed in step four of the invention is physics
Vapour deposition process or atom deposition method.Further, the method for the titanium nitride layer 06 is formed in the step of the present embodiment four
For physical vaporous deposition.Ferroelectric material layer 07 is formed in the upper surface of the titanium nitride layer 06, is preferably formed in the step
The method of the ferroelectric material layer 07 is atom deposition method (ALD).Tantalum nitride is formed in the upper surface of the ferroelectric material layer 07
Layer 08, the tantalum nitride layer 08 are top layer.The method that the tantalum nitride layer 08 is formed in the step is physical vaporous deposition.This
The ferroelectric material layer 07 in embodiment has negative capacitance effect, and under the action of electric field, the polarization direction of material can occur
Reversion, to there is voltage amplification.Therefore, preferably, the ferroelectric material layer 07 is HfO to the present embodiment2。
The method of the iron/piezoelectricity field-effect tube made above puts the synthesis of voltage by ferroelectric material and piezoelectric material
Big effect, can be effectively reduced operating voltage, while the subthreshold swing of device is reduced to 60mV/decade hereinafter, drop
Low device uses power consumption.
The present invention gives another embodiment about the iron/piezoelectricity field-effect tube preparation method, specifically includes following
Step:
Iron/piezoelectricity field-effect tube preparation method flow chart of the invention is shown as with reference to Fig. 2, Fig. 2.This method is at least wrapped
Include following steps:
Step 1: providing silicon substrate, the doped p-type ion in the silicon substrate forms substrate 01；That is the P
The formation of type substrate to form P-type substrate 01 as shown in Figure 1, therefore is obtained by the injecting p-type ion in silicon materials plate
To the NMOS field-effect tube of the present embodiment.
Step 2: forming source electrode 021 and drain electrode 022 in the two sides of the substrate 01, the source electrode 021 and drain electrode 022 are made
For the source electrode and drain electrode of NMOS field-effect tube；
Step 3: sequentially forming silicon dioxide layer 03 above the substrate 01, between the source electrode 021 and drain electrode 022
With high dielectric layer 04；In the present embodiment preferably, the method for the silicon dioxide layer 03 and high dielectric layer 04 is formed in step 3
To be formed using the method for atom deposition method.Further, high dielectric layer 04 includes HfO in step 32、ZrO2、Ta2O5、TiO2
In any one.High dielectric layer 04 is ZrO in the step2Or Ta2O5。
Step 4: sequentially forming piezoelectric material layer 05, titanium nitride layer 06, ferroelectric material layer 07 on the high dielectric layer 04
With tantalum nitride layer 08.That is, the silicon dioxide layer 03 is located at the substrate between the source electrode 021 and drain electrode 022
01 upper surface forms high dielectric layer 04 in the upper surface of the silicon dioxide layer 03, in the upper surface shape of the high dielectric layer 04
At piezoelectric material layer 05, piezoelectric material layer 05 described in the present embodiment is electrostriction material, and piezoelectric material has electrostriction
Effect, under the action of electric field, material generates stress and is compressed, to change the conduction band structure of material internal, enhancing charge is close
Degree, to play the role of voltage amplification.In the iron/piezoelectricity field-effect tube preparation method of the invention, the institute of step 4
Stating piezoelectric material layer is electrostriction material, including any one in aluminium nitride/gallium nitride, lead titanates, barium titanate, lead niobate
Kind.Piezoelectric material layer 05 described in the step of the present embodiment four is barium titanate or lead niobate.
Further, the method that the piezoelectric material layer 05 is formed in step 4 is atom deposition method (ALD).In the pressure
The upper surface of material layer 05 forms titanium nitride layer 06, and the method that the titanium nitride layer is formed in step four of the invention is physics
Vapour deposition process or atom deposition method.Further, the method for the titanium nitride layer 06 is formed in the step of the present embodiment four
For atom deposition method (ALD), which, which forms titanium nitride layer 06 using atom deposition method (ALD), keeps its consistency high, and defect is few,
But also have process costs higher compared to other deposition techniques, the disadvantages of time-consuming.
Ferroelectric material layer 07 is formed in the upper surface of the titanium nitride layer 06, preferably forms the ferroelectricity material in the step
The method of the bed of material 07 is atom deposition method (ALD).Tantalum nitride layer 08, the nitrogen are formed in the upper surface of the ferroelectric material layer 07
Change tantalum layer 08 is top layer.The method that the tantalum nitride layer 08 is formed in the step is physical vaporous deposition.In the present embodiment
The ferroelectric material layer 07 has negative capacitance effect, and under the action of electric field, the polarization direction of material can be inverted, to have
The effect of voltage amplification.Therefore, preferably, the ferroelectric material layer 07 is HfAlO to the present embodiment2Or HfZrO2.It is made above
The iron/piezoelectricity field-effect tube method acts on the comprehensive magnification of voltage by ferroelectric material and piezoelectric material, can be effective
Ground reduces operating voltage, while the subthreshold swing of device is reduced to 60mV/decade hereinafter, reducing device uses power consumption.
In conclusion ferroelectric material and piezoelectric material are introduced in the gate the present invention is based on field effect transistor FET, and
It is integrated with existing FET processing procedure, is total to using the negative capacitance effect of ferroelectric material and the electrostriction effect of piezoelectric material
With the function of realizing voltage amplification.The operating voltage of device is reduced, subthreshold swing is reduced, improves the ON/OFF speed of device, into
One step reduces operating power consumption.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial exploitation value
Value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (14)
1. a kind of iron/piezoelectricity field-effect tube, which is characterized in that include at least:
Substrate；
Source electrode and drain electrode positioned at the substrate two sides；
Grid above the substrate, between the source electrode and drain electrode；The grid includes: from bottom to top to stack gradually
Silicon dioxide layer, high dielectric layer, piezoelectric material layer, titanium nitride layer, ferroelectric material layer and tantalum nitride layer.
2. iron according to claim 1/piezoelectricity field-effect tube, it is characterised in that: the substrate is P-type substrate.
3. iron according to claim 1/piezoelectricity field-effect tube, it is characterised in that: the high dielectric layer includes HfO2、ZrO2、
Ta2O5、TiO2In any one.
4. iron according to claim 1/piezoelectricity field-effect tube, it is characterised in that: the piezoelectric material layer is electrostriction
Material, including any one in aluminium nitride/gallium nitride, lead titanates, barium titanate, lead niobate.
5. iron according to claim 1/piezoelectricity field-effect tube, it is characterised in that: the ferroelectric material layer includes HfO2、
HfAlO2、HfZrO2In any one.
6. iron according to claim 1/piezoelectricity field-effect tube preparation method, it is characterised in that: the field-effect tube is
NMOS tube.
7. a kind of iron/piezoelectricity field-effect tube preparation method, which is characterized in that this method at least includes the following steps:
Step 1: providing silicon substrate, the doped p-type ion in the silicon substrate forms substrate；
Step 2: forming source electrode and drain electrode in the two sides of the substrate；
Step 3: sequentially forming silicon dioxide layer and high dielectric layer between side, the source electrode and drain electrode on the substrate；
Step 4: sequentially forming piezoelectric material layer, titanium nitride layer, ferroelectric material layer and tantalum nitride layer on the high dielectric layer.
8. iron according to claim 7/piezoelectricity field-effect tube preparation method, it is characterised in that: form institute in step 3
The method for stating silicon dioxide layer and high dielectric layer is atom deposition method.
9. iron according to claim 7/piezoelectricity field-effect tube preparation method, it is characterised in that: the high dielectric layer packet
Include HfO2、ZrO2、Ta2O5、TiO2In any one.
10. iron according to claim 7/piezoelectricity field-effect tube preparation method, it is characterised in that: form institute in step 4
The method for stating piezoelectric material layer is atom deposition method.
11. iron according to claim 7/piezoelectricity field-effect tube preparation method, it is characterised in that: form institute in step 4
The method for stating titanium nitride layer is physical vaporous deposition or atom deposition method.
12. iron according to claim 7/piezoelectricity field-effect tube preparation method, it is characterised in that: form institute in step 4
The method for stating ferroelectric material layer is atom deposition method.
13. iron according to claim 7/piezoelectricity field-effect tube preparation method, it is characterised in that: form institute in step 4
The method for stating tantalum nitride layer is physical vaporous deposition.
14. iron according to claim 7/piezoelectricity field-effect tube preparation method, it is characterised in that: pressed described in step 4
Material layer is electrostriction material, including any one in aluminium nitride/gallium nitride, lead titanates, barium titanate, lead niobate.
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