CN110018616B - 基片处理装置、基片处理方法和存储介质 - Google Patents

基片处理装置、基片处理方法和存储介质 Download PDF

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Publication number
CN110018616B
CN110018616B CN201811519531.6A CN201811519531A CN110018616B CN 110018616 B CN110018616 B CN 110018616B CN 201811519531 A CN201811519531 A CN 201811519531A CN 110018616 B CN110018616 B CN 110018616B
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China
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time
substrate
illuminance
cycle
period
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Chinese (zh)
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CN110018616A (zh
Inventor
藤本圆华
鹤田丰久
保坂理人
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H05B45/18—Controlling the intensity of the light using temperature feedback
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • H05B47/16—Controlling the light source by timing means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Debugging And Monitoring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201811519531.6A 2017-12-15 2018-12-12 基片处理装置、基片处理方法和存储介质 Active CN110018616B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017241089A JP6969348B2 (ja) 2017-12-15 2017-12-15 基板処理装置、基板処理方法及び記憶媒体
JP2017-241089 2017-12-15

Publications (2)

Publication Number Publication Date
CN110018616A CN110018616A (zh) 2019-07-16
CN110018616B true CN110018616B (zh) 2023-07-28

Family

ID=66814698

Family Applications (1)

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CN201811519531.6A Active CN110018616B (zh) 2017-12-15 2018-12-12 基片处理装置、基片处理方法和存储介质

Country Status (5)

Country Link
US (1) US10937673B2 (enExample)
JP (1) JP6969348B2 (enExample)
KR (1) KR102329553B1 (enExample)
CN (1) CN110018616B (enExample)
TW (1) TWI778185B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7356847B2 (ja) * 2019-09-03 2023-10-05 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
KR102406087B1 (ko) * 2020-03-23 2022-06-10 엘에스이 주식회사 회전 척에 내장된 광원을 이용한 기판 처리 장치
JP7062716B2 (ja) * 2020-03-27 2022-05-06 キヤノン株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268989A (en) * 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
JP2000036457A (ja) * 1999-06-23 2000-02-02 Nikon Corp 露光制御方法及び装置
WO2004100206A1 (ja) * 2003-05-09 2004-11-18 Ebara Corporation 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法

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JPH01309323A (ja) * 1988-06-07 1989-12-13 Nikon Corp 投影光学装置
US4952949A (en) * 1989-11-28 1990-08-28 Hewlett-Packard Company LED printhead temperature compensation
JPH08250402A (ja) * 1995-03-15 1996-09-27 Nikon Corp 走査型露光方法及び装置
JP2001110710A (ja) * 1999-10-08 2001-04-20 Nikon Corp 露光装置、露光方法、および半導体デバイスの製造方法
US6455821B1 (en) * 2000-08-17 2002-09-24 Nikon Corporation System and method to control temperature of an article
JP2002134393A (ja) * 2000-10-24 2002-05-10 Mitsubishi Electric Corp 露光装置、露光方法およびその露光方法を用いて製造した半導体装置
MXPA04008959A (es) * 2002-03-15 2004-12-10 Matsushita Electric Ind Co Ltd Mecanismo de identificacion de metal y metodo de identificacion de metal.
JP5294920B2 (ja) 2008-08-26 2013-09-18 パナソニック株式会社 Ｌｅｄ光源点灯装置とそれを用いたｌｅｄ照明器具
JP5083189B2 (ja) * 2008-12-09 2012-11-28 コニカミノルタホールディングス株式会社 照明光通信装置、及び照明光通信システム
JP2011237596A (ja) * 2010-05-10 2011-11-24 Hitachi High-Technologies Corp 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5165731B2 (ja) * 2010-06-30 2013-03-21 東京エレクトロン株式会社 局所露光装置及び局所露光方法
JP5836848B2 (ja) * 2012-03-06 2015-12-24 東京エレクトロン株式会社 補助露光装置
JP2013239341A (ja) * 2012-05-15 2013-11-28 Rohm Co Ltd 照明装置及びその駆動方法
JP6337757B2 (ja) 2014-01-20 2018-06-06 東京エレクトロン株式会社 露光装置、レジストパターン形成方法及び記憶媒体
JP2016162760A (ja) * 2015-02-26 2016-09-05 キヤノン株式会社 露光装置、および物品の製造方法
KR20170001670A (ko) * 2016-10-19 2017-01-04 (주)아이에스피테크 엘이디 모듈의 온도 특성에 따른 자동 밝기 보상 방법 및 온도 탐지 유닛을 가진 엘이디 모듈

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268989A (en) * 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
JP2000036457A (ja) * 1999-06-23 2000-02-02 Nikon Corp 露光制御方法及び装置
WO2004100206A1 (ja) * 2003-05-09 2004-11-18 Ebara Corporation 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
EP1635374A1 (en) * 2003-05-09 2006-03-15 Ebara Corporation Electron beam device, electron beam inspection method, electron beam inspection device, pattern inspection method and exposure condition determination method

Also Published As

Publication number Publication date
US20190189475A1 (en) 2019-06-20
TW201937544A (zh) 2019-09-16
JP2019109308A (ja) 2019-07-04
US10937673B2 (en) 2021-03-02
KR20190072456A (ko) 2019-06-25
KR102329553B1 (ko) 2021-11-22
JP6969348B2 (ja) 2021-11-24
TWI778185B (zh) 2022-09-21
CN110018616A (zh) 2019-07-16

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