CN110010493B - 一种互联电感的制作方法 - Google Patents
一种互联电感的制作方法 Download PDFInfo
- Publication number
- CN110010493B CN110010493B CN201811593477.XA CN201811593477A CN110010493B CN 110010493 B CN110010493 B CN 110010493B CN 201811593477 A CN201811593477 A CN 201811593477A CN 110010493 B CN110010493 B CN 110010493B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 66
- 239000002184 metal Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 43
- 238000001312 dry etching Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
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CN201811593477.XA CN110010493B (zh) | 2018-12-25 | 2018-12-25 | 一种互联电感的制作方法 |
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CN201811593477.XA CN110010493B (zh) | 2018-12-25 | 2018-12-25 | 一种互联电感的制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN110010493A CN110010493A (zh) | 2019-07-12 |
CN110010493B true CN110010493B (zh) | 2021-01-08 |
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Family Applications (1)
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CN201811593477.XA Active CN110010493B (zh) | 2018-12-25 | 2018-12-25 | 一种互联电感的制作方法 |
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CN (1) | CN110010493B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111292950A (zh) * | 2019-12-30 | 2020-06-16 | 电子科技大学 | 一种嵌入式磁心微型化三维电感的制作方法和电感 |
CN111682108A (zh) * | 2020-02-29 | 2020-09-18 | 浙江集迈科微电子有限公司 | 一种三维的电感制作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10335142A (ja) * | 1997-05-29 | 1998-12-18 | Citizen Electron Co Ltd | チップインダクタとその製造方法 |
JP2004274004A (ja) * | 2003-01-16 | 2004-09-30 | Fuji Electric Device Technology Co Ltd | 超小型電力変換装置 |
CN100405543C (zh) * | 2006-07-21 | 2008-07-23 | 中国科学院上海微系统与信息技术研究所 | 一种cmos工艺兼容的嵌入悬浮螺管结构电感或互感的制作方法 |
CN101534103B (zh) * | 2009-04-03 | 2011-06-15 | 中国科学院上海微系统与信息技术研究所 | 一种可单片集成的射频滤波器的制作方法 |
CN101599425B (zh) * | 2009-04-17 | 2010-09-29 | 北京交通大学 | 一种微机电系统螺线管电感的制备方法 |
JP6062691B2 (ja) * | 2012-04-25 | 2017-01-18 | Necトーキン株式会社 | シート状インダクタ、積層基板内蔵型インダクタ及びそれらの製造方法 |
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2018
- 2018-12-25 CN CN201811593477.XA patent/CN110010493B/zh active Active
Non-Patent Citations (1)
Title |
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元器件与组件;《今日电子》;20090815(第08期);全文 * |
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CN110010493A (zh) | 2019-07-12 |
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CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Feng Guangjian Inventor before: Wang Zhiyu Inventor before: Feng Guangjian Inventor before: Zhang Bing Inventor before: Zhou Qi Inventor before: Zhang Xun Inventor before: Yu Faxin |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200803 Address after: 313100 Workshop No. 8, North Park, Second Division of Changxing National University Science and Technology Park, Chenwang Road and Taihu Road Intersection, Changxing County Economic and Technological Development Zone, Huzhou City, Zhejiang Province Applicant after: ZHEJIANG JIMAIKE MICROELECTRONIC Co.,Ltd. Address before: 310030 Building 6, No. 3, Xiyuan Third Road, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province Applicant before: HANGZHOU ZHENLEI MICROWAVE TECHNOLOGY Co.,Ltd. |
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