CN110007381A - A kind of visible light broadband absorption device and preparation method thereof - Google Patents
A kind of visible light broadband absorption device and preparation method thereof Download PDFInfo
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- CN110007381A CN110007381A CN201910055998.8A CN201910055998A CN110007381A CN 110007381 A CN110007381 A CN 110007381A CN 201910055998 A CN201910055998 A CN 201910055998A CN 110007381 A CN110007381 A CN 110007381A
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- visible light
- selenium corn
- absorption device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
Abstract
The invention discloses a kind of visible light broadband absorption devices and preparation method thereof, belong to integrated electro subdomains, relate generally to structure-light field control technique, spectral technique, nanofabrication technique etc..The device mainly includes substrate 3, the photoresist periodic nano-structure 2 being placed in substrate 3, and is deposited on the visible light high-selenium corn material layer 1 on the two.Substrate 3 provides rigid support for absorber structure；Periodic nano-structure 2 provides condition for enhancing RESONANCE ABSORPTION；High-selenium corn material medium layer 1 can enhance electromagentic resonance energy absorption, and in visible-range, the material on incident light of imaginary index coefficient k > 4 has very high absorption efficiency；High-selenium corn material side wall 1-2 can improve absorption efficiency further by incident light local inside micro-nano structure；It by the geometric dimension of optimizing cycle nanostructure, may be implemented to absorb the broadband perfection in visible-range, absorptivity is up to 90% or more, covers entire visible-range, and have and polarize the characteristics such as unrelated, incidence angle is insensitive.
Description
Fields
The invention belongs to integrated electro subdomains, relate generally to structure-light field control technique, spectral technique, nanoprocessing
Technology etc..
The prior art
Since light absorption has the intrinsic attribute of energy conversion and optical electivity, the wide wave of visible light based on optical absorption characteristics
Section absorber has important application in numerous areas, both includes the aware applications fields such as information sensing, atmospheric environment monitoring, also wraps
Include the energy applications such as the raw electricity of photovoltaic, solar water heater.Therefore, it is seen that light broadband absorption device just gradually causes academia
With the extensive concern of industrial circle, its absorbing properties is promoted, excavates the application potential of its optical absorption characteristics, there is important research
Meaning and practical value.
In recent years, researcher devises various visible absorption device structures, such as planar metal/medium knot
Structure, metal grating structure etc..However these absorbers are there are narrow bandwidth, processing difficulties, incident light polarization dependence is strong, absorbs effect
The problems such as rate is low.2011, Institutes Of Technology Of Taiyuan Cui Yanxia et al. reported a kind of width based on more sized nanostructures optical grating constructions
Wave band absorber [Applied Physics Letters, 99,253101,2011], by adjusting the width of each nanometer grating,
It can achieve the effect that broadband absorption, however the nanostructure of this more sizes increases design and difficulty of processing；The U.S. adds
State Institute of Technology Koray Aydin et al. reports a kind of by medium/metal/metal structure top layer manufacturing complex shapes
Nanostructure realizes the ultrathin plasma absorber of broadband absorption, but flat to its absorption efficiency of 700nm wave band in 400nm
Mean value is only 71%, and efficiency is lower [Nature Communication, 2,517,2011]；2012, University of Illinois, the U.S.
Champagne branch school Nicholas X.Fang et al. reports a kind of ultra wide wave band absorption based on zigzag anisotropy metamaterial board
Device, the absorber not only need multilayer film, but also need to process micro-nano structure on multilayer film, and it is big to design and produce difficulty, and
[Nano Letters, 12,1443,2012] more sensitive to incident light polarization state；2016, L.J.Guo group, University of Michigan
Team reports a kind of ultra wide wave band absorber based on multilayer film, the absorber be sequentially overlapped series connection by three kinds of layers of absorbent material and
At absorption efficiency can reach 98%, however this absorber is very sensitive to the thickness of film layer, in processing it is difficult to ensure that each
The thickness [ACS Photonics, 3,590,2016] of tunic.Effective visible light broadband absorption device must simultaneously have enough
Wide absorption bands, high absorption efficiency, and the characteristic insensitive to incident light polarization, and processing, in terms of
It is required that it is as low as possible, to reduce design and processing and fabricating cost, therefore, the continual exploitation visible light broadband novel with exploration
Absorber is the needs of device development.
Summary of the invention
Goal of the invention
In order to overcome more size micro-nano structure absorber sizes complexity, design difficulty of processing big, optical grating construction absorber is inclined
The problems such as dependence of shaking is strong, the present invention proposes a kind of visible light broadband absorption device based on periodic nano-structure, it is intended to mention
High-selenium corn efficiency reduces polarization state and incident light angle influence.
Technical solution
Visible light broadband absorption device structure proposed by the present invention is refering to fig. 1 and Fig. 2.Device mainly includes substrate 3, is placed in
Photoresist periodic nano-structure 2 in substrate 3, and it is deposited on the visible light high-selenium corn material layer 1 on the two；
The substrate 3 selects silicon, glass, BOPET polyester film etc.；
The photoresist periodic nano-structure 2 is periodic nanometer column array；
Further, 2 shape of periodic nano-structure can also be square column etc., diameter is (for circle in addition to cylinder
Shape nano-pillar) or side length (be directed to rectangular nano-pillar) area requirement be 90-130nm, periodic regime requires to be 170-210nm；
Further, the spread pattern of the periodic nano-structure 2 can arrange for square array, can also be triangle battle array
Column arrangement etc.；
The visible light high-selenium corn material layer 1 include be deposited directly in substrate 3 high-selenium corn material bottom layer 1-3, directly
The high-selenium corn material nano column 1-1 that is deposited on photoresist periodic nano-structure 2 and it is attached to photoresist periodic nanometer
The high-selenium corn material side wall 1-2 of 2 periphery of structure；
Further, the thickness t of the high-selenium corn material bottom layer 1-3 and high-selenium corn material nano column 1-1 and photoresist week
The thickness h of phase property nanostructure 2 meets: h > t；
Further, the material of imaginary index coefficient k > 4 such as germanium may be selected in the material of the visible light high-selenium corn material layer 1
Material.
A kind of visible light broadband absorption device proposed by the present invention, production method include the following steps: refering to Fig. 3
(a) substrate 3 is cleaned: substrate 3 being put into acetone soln and is cleaned by ultrasonic, is cleaned later with EtOH Sonicate, is finally used
Deionized water cleaning, is dried with nitrogen, is placed on hot plate and dries；
(b) it coats photoresist 4: uniformly coating a layer photoresist 4 in substrate 3 using spin coater, nanometer rolling equipment etc.,
Heat is dried after coating, solidifies photoresist 4；
(c) photoresist periodic nano-structure 2 makes: using for the visible light broadband absorption device of Centimeter Level small size
The processing of the methods of electron beam exposure, laser interference formula photoetching；It is used for the visible light broadband absorption device of high-volume large area
The methods of nanometer roll-in is processed.
(d) it deposits visible light high-selenium corn material 1: utilizing electron beam evaporation technique, magnetron sputtering technique or chemical vapor deposition
Product technology etc. completes the production of broadband absorption device to the high-selenium corn material 1 of above-mentioned substrate deposition specific thicknesses.
Beneficial effect
Substrate 3 provides rigid support for absorber structure；Periodic nano-structure 2 provides condition for enhancing RESONANCE ABSORPTION；
High-selenium corn material medium layer 1 can enhance electromagentic resonance energy absorption, in visible-range, the material of imaginary index coefficient k > 4
Material has very high absorption efficiency to incident light；High-selenium corn material side wall 1-2 can be further by incident light local in micro-nano structure
Absorption efficiency is improved in inside；By the geometric dimension of optimizing cycle nanostructure, may be implemented to the width in visible-range
Wave band perfection absorbs, and absorptivity is up to 90% or more, covers entire visible-range, and unrelated, incidence angle is unwise with polarizing
The characteristics such as sense.Its specific performance summary is as follows:
(1) absorbing structure of the invention has the advantages that absorption efficiency is high, and absorption efficiency is in 90% or more, coverage area
400-800nm visible light all band；
(2) absorbing structure of the invention has polarization-independent characteristic；
(3) absorbing structure that the present invention designs introduces visible light high-selenium corn material, it is only necessary to which single structure size can be realized
Broadband absorption, and allow certain structure size error, reduce the complexity of design and production.
(4) absorbing structure of the invention has to the insensitive characteristic of incident light.
Detailed description of the invention
Fig. 1 is the schematic three dimensional views of visible light broadband absorption device
Fig. 2 is the schematic cross-section of visible light broadband absorption device
Fig. 3 is the processing process figure of visible light broadband absorption device
Fig. 4 is the absorption spectrum curve figure of circular columns square array visible light broadband absorption device
Fig. 5 is abosrption spectrogram of the circular columns square array visible light broadband absorption device under different structure size
Fig. 6 is the side wall impact analysis figure of circular columns square array visible light broadband absorption device structure
Fig. 7 is abosrption spectrogram of the circular columns square array visible light broadband absorption device under 0-90 degree polarization state
Fig. 8 is abosrption spectrogram of the circular columns square array visible light broadband absorption device under different incidence angles
Fig. 9 is the absorption spectrum curve figure of square column triangular array visible light broadband absorption device
Figure 10 is abosrption spectrogram of the square column triangular array visible light broadband absorption device under different structure size
Figure 11 is the side wall impact analysis figure of square column triangular array visible light broadband absorption device structure
Figure 12 is abosrption spectrogram of the square column triangular array visible light broadband absorption device under 0-90 degree polarization state
Figure 13 is abosrption spectrogram of the square column triangular array visible light broadband absorption device under different incidence angles
Wherein 1-1. high-selenium corn material nano column；1-2. high-selenium corn material side wall；1-3. high-selenium corn material bottom layer；2. photoetching
Glue periodic nano-structure；3. substrate；4. photoresist；T is high-selenium corn layer thickness；H is photoresist thickness；P is periodically
The period of nano-structure array；D is the diameter of nanostructure.
Specific embodiment
Embodiment 1:
The small size Centimeter Level visible light broadband absorption device based on electron beam exposure method production that the present invention is implemented
Structure is refering to fig. 1 and Fig. 2.Device mainly includes substrate 3, the photoresist periodic nano-structure 2, Yi Jichen being placed in substrate 3
Visible light high-selenium corn material layer 1 of the product on the two；
The substrate 3 selects silicon base；
The photoresist periodic nano-structure 2 is periodic nanometer column array；
Further, positive photoresist can be selected in the photoresist periodic nano-structure 2 with photoresist, and negtive photoresist also can be selected；
Further, the periodic nano-structure 2 selects circular columns；
Further, the spread pattern of the periodic nano-structure 2 selects rectangular array arrangement；
The visible light high-selenium corn material layer 1 include be deposited directly in substrate 3 high-selenium corn material bottom layer 1-3, directly
The high-selenium corn material nano column 1-1 that is deposited on photoresist periodic nano-structure 2 and it is attached to photoresist periodic nanometer
The high-selenium corn material side wall 1-2 of 2 periphery of structure；
Further, the thickness t=80nm of the high-selenium corn material bottom layer 1-3 and high-selenium corn material nano column 1-1, photoetching
Thickness h=120nm of glue periodic nano-structure 2；
Further, the material of the visible light high-selenium corn material layer 1 selects germanium.
A kind of visible light broadband absorption device that the present invention is implemented, production method include the following steps: refering to Fig. 3
(a) substrate 3 is cleaned: silicon base 3 being put into acetone soln and is cleaned by ultrasonic 5 minutes, cleans 5 with EtOH Sonicate later
Minute, it is finally cleaned, is dried with nitrogen with plasma water, be placed on heat on 180 DEG C of hot plates and dry 2 minutes；
(b) it coats photoresist 4: utilizing the PMMA photoresist 4 of spin coater one layer of 120nm thickness of spin coating in silicon base 3, spin coating
After be placed on 180 DEG C of hot plates heat and dry 2min, solidify photoresist 4；
(c) photoresist periodic nano-structure 2 makes: above-mentioned substrate being put into electron beam exposure apparatus, selection is suitable
Exposure dose, with period 170nm-210nm, the periodic nanometer hole of diameter 90nm-130nm is exposed for figure；It will exposure
Substrate afterwards is put to develop in developer solution, is put into isopropanol rinses later, then with being dried with nitrogen, obtains having and periodically receive
The substrate of rice structure 2；
(d) deposit visible light high-selenium corn material 1: using chemical vapor depsotition equipment it is thick to above-mentioned substrate deposition 80nm can
Light-exposed high-selenium corn material germanium 1 completes the production of broadband absorption device.
Further, refering to Fig. 4, the structure of the period 180nm of production, diameter 100nm are absorbed in 400-800nm wave band
Efficiency is up to 90% or more.
Further, refering to Fig. 5, structure size in certain error range, still can absorption efficiency with higher, subtract
The small technique requirement to processing and fabricating.
Further, refering to Fig. 6, during chemical vapor deposition germanium, inevitably in periodic nanometer knot
One layer of germanium of deposited on sidewalls of structure 2, the structure with side wall have higher absorption efficiency.
Further, refering to Fig. 7, absorption spectrum curve is almost consistent under different polarization states, and absorber has preferable
Polarization-independent characteristic.
Further, refering to Fig. 8, with the increase of incident light angle, absorber structure can still keep higher absorption to imitate
Rate, it is insensitive to incident light angle.
Embodiment 2:
The large area visible light broadband absorption device structure based on the production of nanometer rolling methods that the present invention is implemented is refering to fig. 1
And Fig. 2.Device mainly includes substrate 3, the photoresist periodic nano-structure 2 being placed in substrate 3, and is deposited on the two
Visible light high-selenium corn material layer 1；
The substrate 3 selects BOPET mylar substrate；
The photoresist periodic nano-structure 2 is periodic nanometer column array；
Further, the periodic nano-structure 2 selects square column；
Further, the spread pattern selection triangular array arrangement of the periodic nano-structure 2；
The visible light high-selenium corn material layer 1 include be deposited directly in substrate 3 high-selenium corn material bottom layer 1-3, directly
The high-selenium corn material nano column 1-1 that is deposited on photoresist periodic nano-structure 2 and it is attached to photoresist periodic nanometer
The high-selenium corn material side wall 1-2 of 2 periphery of structure；
Further, the thickness t=80nm of the high-selenium corn material bottom layer 1-3 and high-selenium corn material nano column 1-1, photoetching
Thickness h=120nm of glue periodic nano-structure 2；
Further, the material of the visible light high-selenium corn material layer 1 selects germanium.
A kind of visible light broadband absorption device that the present invention is implemented, production method include the following steps: refering to Fig. 3
(a) substrate 3 is cleaned: BOPET mylar substrate 3 being put into acetone soln and is cleaned by ultrasonic 5 minutes, uses second later
Alcohol is cleaned by ultrasonic 5 minutes, is finally cleaned with plasma water, is dried with nitrogen and heat is dried；
(b) it coats photoresist 4: coating one layer of 120nm thickness on BOPET mylar substrate 3 using nanometer rolling equipment
HSQ photoresist 4, after coating heat dry, make photoresist 4 solidify；
(c) photoresist periodic nano-structure 2 makes: above-mentioned substrate being put into a nanometer rolling equipment, with period 180nm-
The periodic nanometer hole of 210nm, diameter 90nm-120nm are that roll-in template carries out roll-in, are obtained with periodic nano-structure 2
Substrate；
(d) it deposits visible light high-selenium corn material 1: 80nm visible light being deposited to above-mentioned substrate using electron beam evaporation deposition machine
High-selenium corn material germanium 1 completes the production of broadband absorption device.
Further, refering to Fig. 9, the structure of the period 210nm of production, side length 100nm are absorbed in 400-800nm wave band
Efficiency is up to 90% or more.
Further, refering to fig. 10, structure size in certain error range, still can absorption efficiency with higher,
Reduce the technique requirement to processing and fabricating.
Further, refering to fig. 11, during electron beam evaporation plating germanium, inevitably in periodic nano-structure
2 one layer of germanium of deposited on sidewalls, the structure with side wall have higher absorption efficiency.
Further, refering to fig. 12, absorption spectrum curve is almost consistent under different polarization states, and absorber has preferable
Polarization-independent characteristic.
Further, refering to fig. 13, with the increase of incident light angle, absorber structure can still keep higher absorption to imitate
Rate, it is insensitive to incident light angle.
Claims (8)
1. a kind of visible light broadband absorption device, which is characterized in that mainly include substrate 3, the photoresist period being placed in substrate 3
Property nanostructure 2, and it is deposited on the visible light high-selenium corn material layer 1 on the two；
The photoresist periodic nano-structure 2 is periodic nanometer column array.
The visible light high-selenium corn material layer 1 includes high-selenium corn material bottom layer 1-3, the Direct precipitation being deposited directly in substrate 3
High-selenium corn material nano column 1-1 on photoresist periodic nano-structure 2 and it is attached to photoresist periodic nano-structure
The high-selenium corn material side wall 1-2 of 2 peripheries；
The thickness t of the high-selenium corn material bottom layer 1-3 and high-selenium corn material nano column 1-1 and photoresist periodic nano-structure 2
Thickness h meet: h > t.
2. a kind of visible light broadband absorption device, which is characterized in that 3 material of substrate is silicon, glass or BOPET polyester
Film.
3. a kind of visible light broadband absorption device, which is characterized in that 2 shape of periodic nano-structure is that body diameter is
90-130nm, period 170-210nm.
4. a kind of visible light broadband absorption device, which is characterized in that 2 shape of periodic nano-structure is square column, side length
For 90-130nm, period 170-210nm.
5. a kind of visible light broadband absorption device, which is characterized in that the spread pattern of the periodic nano-structure 2 is rectangular battle array
Column arrangement or triangular array arrangement.
6. a kind of visible light broadband absorption device, which is characterized in that the material of the visible light high-selenium corn material layer 1 is refraction
The material of rate imaginary part coefficient k > 4.
7. a kind of visible light broadband absorption device, which is characterized in that the material of the visible light high-selenium corn material layer 1 is germanium.
8. a kind of preparation method of the visible light broadband absorption device as described in one of claim 1-7, which is characterized in that including
Following steps:
(a) substrate 3 clean: substrate 3 is put into acetone soln and is cleaned by ultrasonic, is cleaned later with EtOH Sonicate, finally spend from
Sub- water cleaning, is dried with nitrogen, is placed on hot plate and dries；
(b) it coats photoresist 4: uniformly coating a layer photoresist 4 in substrate 3 using spin coater, nanometer rolling equipment etc., coat
After heat dry, make photoresist 4 solidify；
(c) it makes photoresist periodic nano-structure 2: using electronics for the visible light broadband absorption device of Centimeter Level small size
The method processing of beam exposure or laser interference formula photoetching；Nanometer is used for the visible light broadband absorption device of high-volume large area
The method of roll-in is processed.
(d) it deposits visible light high-selenium corn material 1: utilizing electron beam evaporation technique, magnetron sputtering technique or chemical vapor deposition skill
Art completes the production of broadband absorption device to the high-selenium corn material 1 of above-mentioned substrate deposition specific thicknesses.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111338011A (en) * | 2020-03-10 | 2020-06-26 | 江南大学 | Method for realizing ultra-wideband light absorption enhancement by adopting composite microstructure |
| CN111479458A (en) * | 2020-04-22 | 2020-07-31 | 江苏师范大学 | Visible light high-transmittance intermediate infrared wave absorbing device based on layered inclined ITO nanorod array and preparation method thereof |
| CN112255715A (en) * | 2020-10-23 | 2021-01-22 | 江南大学 | Method for realizing broadband light absorption enhancement based on ultrathin metal film and wave absorbing device |
| CN113640906A (en) * | 2021-07-09 | 2021-11-12 | 中国科学院近代物理研究所 | Near-perfect light absorber and universal preparation method thereof |
| CN115793342A (en) * | 2022-12-07 | 2023-03-14 | 西北工业大学宁波研究院 | All-solid-state multi-channel dynamically adjustable spectral filter and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113640906A (en) * | 2021-07-09 | 2021-11-12 | 中国科学院近代物理研究所 | Near-perfect light absorber and universal preparation method thereof |
| CN115793342A (en) * | 2022-12-07 | 2023-03-14 | 西北工业大学宁波研究院 | All-solid-state multi-channel dynamically adjustable spectral filter and preparation method thereof |
| CN115793342B (en) * | 2022-12-07 | 2024-03-26 | 西北工业大学宁波研究院 | All-solid-state multichannel dynamic adjustable spectrum filter device and preparation method thereof |
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Application publication date: 20190712 |