CN110006727A - A kind of monitoring method of ion implantation apparatus stability - Google Patents
A kind of monitoring method of ion implantation apparatus stability Download PDFInfo
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- CN110006727A CN110006727A CN201910282793.3A CN201910282793A CN110006727A CN 110006727 A CN110006727 A CN 110006727A CN 201910282793 A CN201910282793 A CN 201910282793A CN 110006727 A CN110006727 A CN 110006727A
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- oxide layer
- ion implantation
- implantation apparatus
- monitoring method
- silicon wafer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
Abstract
The invention discloses a kind of monitoring methods of ion implantation apparatus stability, comprising the following steps: S1, first takes light silicon wafer, and grows oxide layer；S2, ion implanting is carried out to the light silicon wafer of growth oxide layer, and the peak concentration injected ions into is infused in the interface of silicon and oxide layer；S3, rapid thermal treatment is carried out, activator impurity forms conductive layer；S4, removing oxide layer is removed；S5, the test to the conductive layer progress resistance value for removing removing oxide layer, confirm resistance stability；S6, fixed frequency monitoring is carried out repeatedly to conductive layer；The present invention changes existing injection board monitor mode, can play the role of to the stability monitoring of implanter energy and dosage good, the probability for causing the failure of bulk article to scrap because of the fluctuation of board is substantially reduced, with good market application value.
Description
Technical field
The present invention relates to semiconductor chip manufacturing field more particularly to a kind of monitoring methods of ion implantation apparatus stability.
Background technique
In semiconductors manufacture, doping mainly have two kinds of forms of high-temperature diffusion method and ion implantation, because ion implantation compared with
High-temperature diffusion method has good impurity precision controlling, the control of good penetration depth, lower technological temperature (photoetching to can be used
Glue does exposure mask) and the advantages such as unlimited solid solubility, become main doping way in current semiconductors manufacture.Recently as chip
The accurate control of the continuous diminution of size, impurity requires higher and higher, and ion implanting is made to occupy increasingly consequence.
Ion implanting is completed by ion implantation apparatus, and the whether stable quality for directly influencing product of ion implantation apparatus,
Due to cannot directly be tested product after ion implanting, whether confirmation technique is normal, so industry is to ion implantation apparatus
Stability monitoring is carried out by the way of offline, i.e., carries out the certain energy of foreign ion on light silicon wafer and (be added on ion
Certain high pressure makes it with certain speed, determines that ion enters the depth in silicon wafer) and dosage (i.e. amount of ions, decision
Ion doping concentration) injection, then carry out rapid thermal annealing carry out impurity activation, test resistance, with resistance whether certain
The stability of board is measured in range, when confirmation result is stablized, then ion implanting is carried out to product, it is ensured that product quality, so
And there are drawbacks for this monitoring method, the number of dosage directly influences the size of resistance, therefore has very well to the stability of dosage
Reaction；And high pressure occurs being greater than 20% fluctuation or offset, resistance can react and go wrong, but in high pressure fluctuations or
In the case that person's offset is less than ± 20%, resistance does not come out the response fluctuation of high pressure, unstable and not so as to cause energy
It can detect and, however this small-scale fluctuation is frequently present of, therefore often be will lead to product failure and scrapped, therefore seek one
Kind can monitor dosage and monitor energy fluctuation monitoring method it is extremely urgent.
The prior art is defective, needs to improve.
Summary of the invention
In order to solve defect existing for present technology, the present invention provides a kind of monitoring sides of ion implantation apparatus stability
Method.
Technology official documents and correspondence provided by the invention, a kind of monitoring method of ion implantation apparatus stability, comprising the following steps:
S1, light silicon wafer is first taken, and grows oxide layer；
S2, to growth oxide layer light silicon wafer carry out ion implanting, and the peak concentration injected ions into be infused in silicon and
The interface of oxide layer.
S3, rapid thermal treatment is carried out, activator impurity forms conductive layer；
S4, removing oxide layer is removed；
S5, the test to the conductive layer progress resistance value for removing removing oxide layer, confirm resistance stability；
S6, fixed frequency monitoring is carried out repeatedly to conductive layer.
Preferably, light silicon wafer described in step S1 chooses N-type light silicon wafer, and resistivity is 4-7ohm/cm2, oxide layer
With a thickness of 1600-2500A.
Preferably, light silicon wafer described in step S1 chooses N shape light silicon wafer, and resistivity is 6ohm/cm2, the thickness of oxide layer
Degree is 2000A.
Preferably, the condition of step S2 intermediate ion injection is B11+, 60Kev, 2E13.
Preferably, in step S3 rapid thermal treatment condition be 950~1150 degree, 20-50 seconds, N2.
Preferably, in step S3 rapid thermal treatment condition be 1050 degree, 30 seconds, N2.
Preferably, rapid thermal treatment uses RTP equipment in step S3, and RTP heating element uses tungsten-halogen lamp or indifferent gas
The long arc-discharge lamp of body, inert gas are set as krypton or xenon.
Preferably, the impurity of step S2 intermediate ion injection uses BF using matter source gas, the impurity source gas is led3。
Preferably, in step S4, removing oxide layer is gone using wet etching.
Preferably, in step S6, the frequency of fixed frequency monitoring is once a day.
Beneficial effect compared with the existing technology, by the way that oxide layer is arranged, and the peak concentration injected ions into is infused in
On silicon and the interface of oxide layer, and removing oxide layer is removed, the resistance value test to conductive layer is the concentration of test ion injection
Peak value maximizes high pressure fluctuations or offset, reacts resistance value accurately and go wrong, in the prior art only to dosage
There is good monitoring, the present invention changes existing injection board monitor mode, monitors to the stability of implanter energy and dosage
It can play the role of good, substantially reduce the probability for causing the failure of bulk article to scrap because of the fluctuation of board, have good
Good market application value.
Detailed description of the invention
Fig. 1 is step 1 schematic diagram in the embodiment of the present invention one；
Fig. 2 is step 2 schematic diagram 1 in the embodiment of the present invention one；
Fig. 3 is step 2 schematic diagram 2 in the embodiment of the present invention one；
Fig. 4 is that step 4 removes schematic diagram after removing oxide layer in the embodiment of the present invention one.
Specific embodiment
It should be noted that above-mentioned each technical characteristic continues to be combined with each other, the various embodiments not being enumerated above are formed,
It is accordingly to be regarded as the range of description of the invention record；Also, for those of ordinary skills, it can add according to the above description
To improve or convert, and all these modifications and variations should all belong to the protection domain of appended claims of the present invention.
To facilitate the understanding of the present invention, in the following with reference to the drawings and specific embodiments, the present invention will be described in more detail.
A better embodiment of the invention is given in the attached drawing.But the invention can be realized in many different forms, and unlimited
In this specification described embodiment.On the contrary, purpose of providing these embodiments is makes to the disclosure
Understand more thorough and comprehensive.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.Term used in this specification " vertical ", " horizontal ",
"left", "right" and similar statement are merely for purposes of illustration.
Unless otherwise defined, technical and scientific term all used in this specification is led with technology of the invention is belonged to
The normally understood meaning of the technical staff in domain is identical.It is specific to be intended merely to description for used term in the description of the invention
Embodiment purpose, be not intended to limitation the present invention.
It elaborates with reference to the accompanying drawing to the present invention.
As shown in Figures 1 to 4, embodiment one, a kind of monitoring method of ion implantation apparatus stability, comprising the following steps:
S1, light silicon wafer is first taken, and grows oxide layer；
S2, to growth oxide layer light silicon wafer carry out ion implanting, and the peak concentration injected ions into be infused in silicon and
The interface of oxide layer.
S3, rapid thermal treatment is carried out, activator impurity forms conductive layer；
S4, removing oxide layer is removed；
S5, the test to the conductive layer progress resistance value for removing removing oxide layer, confirm resistance stability；
S6, fixed frequency monitoring is carried out repeatedly to conductive layer.
Preferably, light silicon wafer described in step S1 chooses N-type light silicon wafer, and resistivity is 4-7ohm/cm2, oxide layer
With a thickness of 1600-2500A.
Preferably, light silicon wafer described in step S1 chooses N shape light silicon wafer, and resistivity is 6ohm/cm2, the thickness of oxide layer
Degree is 2000A.
Preferably, the condition of step S2 intermediate ion injection is B11+, 60Kev, 2E13.
Preferably, in step S3 rapid thermal treatment condition be 950~1150 degree, 20-50 seconds, N2.
Preferably, in step S3 rapid thermal treatment condition be 1050 degree, 30 seconds, N2.
Preferably, rapid thermal treatment uses RTP equipment in step S3, and RTP heating element uses tungsten-halogen lamp or indifferent gas
The long arc-discharge lamp of body, inert gas are set as krypton or xenon.
Preferably, the impurity of step S2 intermediate ion injection uses BF using matter source gas, the impurity source gas is led3。
Preferably, in step S4, removing oxide layer is gone using wet etching.
Preferably, in step S6, the frequency of fixed frequency monitoring is once a day.
After ion enters the light silicon chip surface with oxide layer with certain speed, the collision by lattice atoms leads to energy
Loss, until stopping at a certain position, therefore each ion has a random track, but largely stops at similar
Depth at i.e. Rp, also there is sub-fraction collision probability dot, and that walks is deeper, some collision probabilities more greatly, shallow one walked
A bit, generally speaking, impurities concentration distribution regards a symmetrical Gaussian distribution model as, as shown in Figure 3.
Further, it in step S4, goes removing oxide layer to remove using wet process, includes the following steps S41, the light silicon to oxidation
Piece is pre-processed；S42, hydrofluoric acid solution, HF:H are prepared20 volume ratio 1:5-1:20, S43, immersion, match in step S42
10s-30s is impregnated in the hydrofluoric acid solution of system；It please increase deionized water cleaning light silicon wafer S44, take out drying；Preferably, step
In S42, HF:H20 volume ratio is set as 1:10.
Further, in step S41, the pretreatment of the light silicon wafer of oxidation is included the following steps, S411, light silicon wafer exists
15min is heated in No. 1 solution, and solution temperature control is at 80 degrees Celsius；S412, light silicon wafer is heated in No. 2 solution
15min, and solution temperature control is at 80 degrees Celsius；Further, No. 1 solution is NH3:H2O2: deionized water quality ratio is 1:1:
5~7；No. 2 solution are HCL:H2O2: deionized water quality ratio is 1:1:5~7.
Embodiment two the difference is that, in step S4, goes removing oxide layer to remove using wet process, packet with above embodiments
Following steps are included, S41, prepare 6:1 BOE etching liquid, i.e. 49%HF aqueous solution and 40%NH4F aqueous solution is mixed by 1:6.
By the light silicon wafer with oxide layer be put into wherein, time about 50s-150s；S42, light silicon wafer is cleaned with deionized water, take out and dry
It is dry；Repeat step S411, S412.
Embodiment three, a kind of monitoring method of ion implantation apparatus stability, comprising the following steps:
S1, p-type light silicon wafer is first taken, and grows oxide layer, resistivity 15-25ohm/cm2, oxide layer with a thickness of
700A；
S2, to growth oxide layer light silicon wafer carry out ion implanting, and the peak concentration injected ions into be infused in silicon and
The interface of oxide layer, the condition of ion implanting are P31+, 60Kev, 1E13.
S3, rapid thermal treatment is carried out, activator impurity forms conductive layer；
S4, removing oxide layer is removed；
S5, the test to the conductive layer progress resistance value for removing removing oxide layer, confirm resistance stability；S6, to conductive layer into
Repeatedly fixed frequency monitors row.
It should be noted that above-mentioned each technical characteristic continues to be combined with each other, the various embodiments not being enumerated above are formed,
It is accordingly to be regarded as the range of description of the invention record；Also, for those of ordinary skills, it can add according to the above description
To improve or convert, and all these modifications and variations should all belong to the protection domain of appended claims of the present invention.
Claims (10)
1. a kind of monitoring method of ion implantation apparatus stability, which comprises the following steps:
S1, light silicon wafer is first taken, and grows oxide layer；
S2, ion implanting is carried out to the light silicon wafer of growth oxide layer, and the peak concentration injected ions into is infused in silicon and oxidation
The interface of layer.
S3, rapid thermal treatment is carried out, activator impurity forms conductive layer；
S4, removing oxide layer is removed；
S5, the test to the conductive layer progress resistance value for removing removing oxide layer, confirm resistance stability；
S6, fixed frequency monitoring is carried out repeatedly to conductive layer.
2. a kind of monitoring method of ion implantation apparatus stability according to claim 1, which is characterized in that described in step S1
Light silicon wafer chooses N-type light silicon wafer, and resistivity is 4-7ohm/cm2, oxide layer with a thickness of 1600-2500A.
3. a kind of monitoring method of ion implantation apparatus stability according to claim 2, which is characterized in that described in step S1
Light silicon wafer chooses N shape light silicon wafer, and resistivity is 6ohm/cm2, oxide layer with a thickness of 2000A.
4. a kind of monitoring method of ion implantation apparatus stability according to claim 1, which is characterized in that step S2 intermediate ion
The condition of injection is B11+, 60Kev, 2E13.
5. a kind of monitoring method of ion implantation apparatus stability according to claim 4, which is characterized in that in step S3 quickly
The condition of heat treatment be 950~1150 degree, 20-50 seconds, N2.
6. a kind of monitoring method of ion implantation apparatus stability according to claim 5, which is characterized in that in step S3 quickly
The condition of heat treatment be 1050 degree, 30 seconds, N2.
7. a kind of monitoring method of ion implantation apparatus stability according to claim 6, which is characterized in that in step S3 quickly
Heat treatment uses RTP equipment, and RTP heating element is set as using tungsten-halogen lamp or the long arc-discharge lamp of inert gas, inert gas
Krypton or xenon.
8. a kind of monitoring method of ion implantation apparatus stability according to claim 7, which is characterized in that step S2 intermediate ion
The impurity of injection uses impurity source gas, and the impurity source gas uses BF3。
9. a kind of monitoring method of ion implantation apparatus stability according to claim 8, which is characterized in that in step S4, adopt
Removing oxide layer is removed with wet etching.
10. a kind of monitoring method of ion implantation apparatus stability according to claim 1, which is characterized in that fixed in step S6
The frequency of frequency monitoring is once a day.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106029A (en) * | 2019-12-31 | 2020-05-05 | 深圳市锐骏半导体股份有限公司 | Monitoring method of wafer rapid thermal processing machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106029A (en) * | 2019-12-31 | 2020-05-05 | 深圳市锐骏半导体股份有限公司 | Monitoring method of wafer rapid thermal processing machine |
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