CN109984771B - Ultrasonic transducer probe and ultrasonic imager - Google Patents
Ultrasonic transducer probe and ultrasonic imager Download PDFInfo
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- CN109984771B CN109984771B CN201910371588.4A CN201910371588A CN109984771B CN 109984771 B CN109984771 B CN 109984771B CN 201910371588 A CN201910371588 A CN 201910371588A CN 109984771 B CN109984771 B CN 109984771B
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- 239000000523 sample Substances 0.000 title claims abstract description 207
- 239000000463 material Substances 0.000 claims abstract description 129
- 238000002955 isolation Methods 0.000 claims abstract description 55
- 238000002604 ultrasonography Methods 0.000 claims description 63
- 238000003384 imaging method Methods 0.000 claims description 28
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000012285 ultrasound imaging Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 13
- 230000008859 change Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4444—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
- A61B8/4494—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer characterised by the arrangement of the transducer elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
- B06B2201/70—Specific application
- B06B2201/76—Medical, dental
Abstract
The invention discloses an ultrasonic transducer probe, which comprises a plurality of ultrasonic transducer probe units which are arranged in a stacked mode; the ultrasonic transducer probe unit comprises a piezoelectric material block, a first electrode and a second electrode; the first electrode and the second electrode are arranged on the surface of the piezoelectric material block, and an insulated isolation region exists between the first electrode and the second electrode; the same electrodes of the adjacent ultrasonic transducer probe units are electrically connected; the isolation regions on the surfaces, which are contacted with each other, of the adjacent ultrasonic transducer probe units are partially or completely overlapped, so that electrodes on two sides of the overlapped isolation regions are in electric-free connection, the ultrasonic transducer probe of the ultrasonic transducer probe comprises the ultrasonic transducer probe units of the piezoelectric material blocks with different thicknesses, and the adjustment range of the electrical impedance of the device can be enlarged on the premise of low cost. The invention also provides an ultrasonic imager with the beneficial effects.
Description
Technical Field
The invention relates to the technical field of energy conversion, in particular to an ultrasonic transducer probe and an ultrasonic imager.
Background
As a transducer for realizing mutual conversion of electric energy and acoustic energy, the ultrasonic imager has excellent acoustic and electrical properties, and whether the transducer is matched with an ultrasonic imaging system circuit of the ultrasonic imager connected with the transducer or not also influences the power obtained by the transducer from the ultrasonic imager. Therefore, in the design of the transducer, it is important to match the electrical impedance of the device with the electrical impedance of the ultrasonic imaging system circuit of the ultrasonic imager as much as possible through electrical design.
In the prior art, if the electrical impedance of the device is to be changed, the material of the device is generally considered, and the resistance of the device is changed by changing the material of the device to be as consistent as possible with the electrical impedance of the ultrasonic detection system (i.e., as same as the electrical impedance of an external circuit as possible), but only changing the material is high in cost, and the adjustable resistance range is very small, so that an ideal effect of adjusting the resistance is difficult to achieve, and therefore, finding a method which is low in cost and can adjust the electrical impedance of the ultrasonic transducer in a large range becomes a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide an ultrasonic transducer probe and an ultrasonic imager, and aims to solve the problems that in the prior art, the adjustable range of the electrical impedance is too small and the cost is too high.
In order to solve the above technical problem, the present invention provides an ultrasound transducer probe, which includes a plurality of ultrasound transducer probe units stacked together;
the ultrasonic transducer probe unit comprises a piezoelectric material block, a first electrode and a second electrode;
the first electrode and the second electrode are arranged on the surface of the piezoelectric material block;
an insulated isolation region exists between the first electrode and the second electrode;
the same electrodes of the adjacent ultrasonic transducer probe units are electrically connected; the isolation regions on the mutually contacted surfaces of the adjacent ultrasonic transducer probe units are partially or completely overlapped, so that the electrodes on the two sides of the overlapped isolation regions are in electroless connection;
ultrasonic transducer probe the ultrasonic transducer probe comprises the ultrasonic transducer probe units of the piezoelectric material blocks with different thicknesses, so that the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of an ultrasonic imaging system circuit.
Still further, in the ultrasonic transducer probe, the block of piezoelectric material is a block of sheet-like piezoelectric material.
Still further, in the ultrasonic transducer probe, the sheet-like piezoelectric material block is a rectangular sheet-like piezoelectric material block or a circular sheet-like piezoelectric material block.
Still further, in the ultrasonic transducer probe, the isolation regions are at upper and lower surfaces of the sheet-like piezoelectric material block.
Further, in the ultrasonic transducer probe, when the sheet-shaped piezoelectric material block is a rectangular sheet-shaped piezoelectric material block, the isolation region at the upper surface is symmetrical with a perpendicular bisector at a standard height of the upper surface as a center of symmetry;
the isolation area on the lower surface is symmetrical by taking a perpendicular bisector at the standard height of the lower surface as a symmetry center;
the standard height is a height within the upper surface or the lower surface, parallel to the first side surface and the second side surface;
the second side surface is a surface opposite to the first side surface.
Still further, in the ultrasonic transducer probe, the first electrodes are disposed on the upper surface and the first side surface of the rectangular sheet-like piezoelectric material block;
the second electrodes are arranged on the lower surface and the second side surface of the rectangular sheet-shaped piezoelectric material block.
Still further, in the ultrasonic transducer probe, the isolation region is a linear isolation region.
Still further, in the ultrasonic transducer probe, an area of the first electrode is equal to an area of the second electrode.
Still further, in the ultrasonic transducer probe, the piezoelectric material block includes an inorganic piezoelectric ceramic material sheet, an inorganic piezoelectric single crystal material sheet, a piezoelectric composite material sheet, and an organic piezoelectric material block.
The invention also provides an ultrasonic imager, which comprises an ultrasonic imaging system circuit and the ultrasonic transducer probe.
The ultrasonic transducer probe provided by the invention comprises a plurality of ultrasonic transducer probe units which are arranged in a stacked mode; the ultrasonic transducer probe unit comprises a piezoelectric material block, a first electrode and a second electrode; the first electrode and the second electrode are arranged on the surface of the piezoelectric material block; an insulated isolation region exists between the first electrode and the second electrode; the same electrodes of the adjacent ultrasonic transducer probe units are electrically connected; the isolation regions on the surfaces, which are contacted with each other, of the adjacent ultrasonic transducer probe units are partially or completely overlapped, so that the electrodes on two sides of the overlapped isolation regions are in no-electric connection, the ultrasonic transducer probe of the ultrasonic transducer probe comprises the ultrasonic transducer probe units of the piezoelectric material blocks with different thicknesses, and the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of an ultrasonic imaging system circuit. According to the technical scheme, the thickness of the piezoelectric material block is changed, so that the electrical impedance of the ultrasonic transducer probe can be adjusted, the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of the ultrasonic imaging system circuit, and the closer the electrical impedance of the ultrasonic transducer probe is to the electrical impedance of the ultrasonic imaging system circuit, the higher the power which can be obtained by the ultrasonic transducer probe is, so that the working efficiency of the ultrasonic transducer probe can be effectively improved, and the energy utilization rate is improved; in addition, because the thickness can be adjusted continuously, compare prior art and change the electrical impedance through changing the transducer material matter, the technical scheme of this application can obtain bigger adjusting range, and has reduced the required cost of adjusting electrical impedance. The invention also provides an ultrasonic imager with the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a front view of one embodiment of an ultrasound transducer probe provided in accordance with the present invention;
FIG. 2 is a schematic structural diagram of an embodiment of an ultrasound transducer probe provided in the present invention;
FIG. 3 is a front view of one embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided by the present invention;
FIG. 4 is a top view of one embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided in the present invention;
FIG. 5 is a left side view of one embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided by the present invention;
FIG. 6 is a front view of another embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided in the present invention;
FIG. 7 is a front view of yet another embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided in the present invention;
FIG. 8 is a front view of yet another embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided in the present invention;
fig. 9 is a schematic structural diagram of still another embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided by the present invention;
FIG. 10 is a front view of another embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided in accordance with the present invention;
FIG. 11 is a top view of another embodiment of an ultrasound transducer probe unit of an ultrasound transducer probe provided in accordance with the present invention;
FIG. 12 is a graph of the electrical impedance magnitude of the resonance point of a prior art ultrasound transducer probe;
FIG. 13 is a graph of electrical impedance magnitudes of resonance points for one embodiment of an ultrasound transducer probe provided in accordance with the present invention;
FIG. 14(a) is a graph of an acoustic echo of an embodiment of an ultrasound transducer probe provided in accordance with the present invention;
FIG. 14(b) is a graph of a frequency spectrum of one embodiment of an ultrasound transducer probe provided in the present invention;
FIG. 14(c) is a graph of acoustic echo for one embodiment of an ultrasound transducer probe of the prior art;
FIG. 14(d) is a graph of a frequency spectrum of one embodiment of a prior art ultrasound transducer probe;
FIG. 15 is a graph of electrical impedance of yet another embodiment of an ultrasound transducer probe provided in accordance with the present invention;
FIG. 16 is a graph of impedance magnitude of a block of piezoelectric material versus thickness of the block of piezoelectric material at a first resonance point for an embodiment of an ultrasound transducer probe provided in accordance with the present invention;
FIG. 17 is a graph of impedance amplitude of a block of piezoelectric material versus thickness of the block of piezoelectric material at a first anti-resonance point for an embodiment of an ultrasound transducer probe provided in accordance with the present invention;
FIG. 18 is a graph of impedance magnitude of a block of piezoelectric material versus thickness of the block of piezoelectric material at a second resonance point for an embodiment of an ultrasound transducer probe provided in accordance with the present invention;
fig. 19 is a graph of impedance amplitude of a block of piezoelectric material versus thickness of the block of piezoelectric material at a second anti-resonance point for an embodiment of an ultrasound transducer probe provided in accordance with the present invention.
Detailed Description
It should be noted in advance that, because the ultrasound imaging apparatus is composed of the host and the ultrasound transducer probe, and the host has inherent ohmic impedance, it can be known from power calculation that the closer the impedance values of the host and the probe are, the higher the transducer power is at the same voltage, the higher the transduction ratio is, and the above-mentioned ultrasound imaging system circuit in this application is the total electrical impedance of the rest circuit structures excluding the ultrasound transducer probe.
With the progress of the technology, the ultrasonic imaging instrument has wider and wider development prospect. An ultrasonic imager is a device that converts electromagnetic energy into mechanical energy (acoustic energy) by converting an electrical signal into mechanical vibrations through the piezoelectric effect of a block of piezoelectric material resonating at ultrasonic frequencies. Medical ultrasound imagers are an important application of ultrasound imagers, which usually contain an electrical energy storage element and a mechanical vibration system inside. When the transducer is used as a transmitter, an electric oscillating signal from an excitation power supply will cause a change in the electric or magnetic field in the electrical energy storage element in the transducer, which change, by some effect, will produce a driving force on the mechanical vibration system of the transducer, causing it to enter a vibrating state, thereby driving the medium in contact with the mechanical vibration system of the transducer to vibrate, radiating sound waves into the medium. The process of receiving sound waves is in contrast to this, and extraneous sound waves act on the vibrating surface of the transducer, so that the mechanical vibration system of the transducer vibrates, which, by means of some physical effect, causes a corresponding change in the electric or magnetic field in the energy storage element of the transducer, and thus an electric voltage and current corresponding to the sound signal at the electrical output of the transducer.
The ultrasonic transducer probe usually needs a smaller size to meet the detection requirement, which limits the size of the whole structure of the transducer and also limits the area S of the piezoelectric material block 103 in the transducer, and if the working frequency domain of the ultrasonic imager is in a low frequency band, the thickness d of the piezoelectric material block 103 needs to be increased. According to the determined formula of capacitance
C＝εS/4πkd
It can be seen that in this case, the capacitance of the piezoelectric material block 103 is greatly reduced due to the smaller S and the larger d, and the electrical impedance formula is used
Z＝R+i(ωL–1/(ωC))
It can be seen that the smaller the capacitance of the block 103 of piezoelectric material as a capacitive load, the greater the electrical impedance, which is not conducive to converting electrical energy into mechanical energy. Therefore, in order to increase the energy conversion rate of such a small-sized ultrasound imager, it is necessary to increase the capacitance to decrease the electrical impedance while satisfying the requirement of the smaller area S and the larger thickness d of the piezoelectric material block 103.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the invention is an ultrasonic transducer probe, the front view of one specific embodiment of which is shown in fig. 1, which is called as the first specific embodiment, the ultrasonic transducer probe comprises a plurality of ultrasonic transducer probe units which are arranged in a stacked manner;
the ultrasonic transducer probe unit comprises a piezoelectric material block 103, a first electrode 101 and a second electrode 102;
the first electrode 101 and the second electrode 102 are disposed on the surface of the block of piezoelectric material 103;
an isolation region 104 for insulating the first electrode 101 from the second electrode 102; the same electrodes of the adjacent ultrasonic transducer probe units are electrically connected;
the isolation regions 104 on the mutually contacted surfaces of the adjacent ultrasonic transducer probe units are partially or completely overlapped, so that the electrodes on two sides of the overlapped isolation regions 104 are in electroless connection;
the ultrasonic transducer probe comprises the ultrasonic transducer probe unit of the piezoelectric material block 103 with different thicknesses, so that the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of an ultrasonic imaging system circuit of the ultrasonic imager.
It should be noted that structures belonging to different ultrasound transducer probe units are distinguished by a, b in the figure, such as "101 a" and "101 b" respectively representing the first electrodes 101 of two different ultrasound transducer probe units.
It should be particularly reminded that "electrical impedance is consistent" in this application means that the electrical impedance of the ultrasonic transducer probe is as same as the electrical impedance of an ultrasonic imaging system circuit of an ultrasonic imager as possible, and in actual production, because the ultrasonic transducer probe and the ultrasonic imaging system circuit both have complex circuit structures, it is difficult to make the electrical impedance values of the ultrasonic transducer probe and the ultrasonic imaging system circuit completely the same, and because the closer the electrical impedances of the ultrasonic transducer probe and the ultrasonic imaging system circuit are, the higher the power that the ultrasonic transducer probe can obtain, the "consistent" in this application means as close as possible.
It should be noted that the vibration mode of the piezoelectric material block 103 is related to the shape and size of the material, and the piezoelectric vibrator manufactured by the piezoelectric material block 103 according to the present invention is a strip-shaped vibrator, and the vibration mode of the vibrator is a strip-shaped thickness vibration mode. The invention adopts an electrical parallel structure, and on the premise of adjusting the electrical impedance of the oscillator according to design requirements, the strip shape and the total thickness of the oscillator are not changed, that is, the operation carried out in the application is to set the required vibration mode and frequency, keep the total thickness of the ultrasonic transducer probe unchanged, and improve the efficiency of the ultrasonic transducer probe by adjusting the thickness of each piezoelectric material block, so the electrical parallel effect of the invention is that the vibration mode of the piezoelectric material block 103 still keeps the vibration mode of the original non-parallel structure, and the vibration mode of the piezoelectric transducer probe cannot be changed due to the introduction of the electrical parallel structure.
Furthermore, the ultrasonic transducer probe can change the energy distribution of different resonance points and anti-resonance points by changing the arrangement sequence of the piezoelectric materials with different thicknesses, and can further adjust the vibration mode of the ultrasonic imager according to actual conditions.
The ultrasonic transducer probe of the present embodiment includes a plurality of ultrasonic transducer probe units arranged in a stacked manner; the ultrasonic transducer probe unit comprises a piezoelectric material block 103, a first electrode 101 and a second electrode 102; the first electrode 101 and the second electrode 102 are disposed on the surface of the block of piezoelectric material 103; an isolation region 104 for insulating the first electrode 101 from the second electrode 102; the isolation regions 104 on the surfaces of the adjacent ultrasound transducer probe units, which are in contact with each other, are partially or completely overlapped, so that the electrodes on the two sides of the overlapped isolation regions 104 are in electroless connection, and the ultrasound transducer probe comprises the ultrasound transducer probe units of the piezoelectric material block 103 with different thicknesses. By changing the thickness of the piezoelectric material block 103, the electrical impedance of the ultrasonic transducer probe can be adjusted, so that the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of the ultrasonic imaging system circuit, and the closer the electrical impedance of the ultrasonic transducer probe is to the electrical impedance of the ultrasonic imaging system circuit, the higher the power which can be obtained by the ultrasonic transducer probe is, therefore, the technical scheme of the ultrasonic imaging system can effectively improve the working efficiency of the ultrasonic transducer probe and improve the energy utilization rate; in addition, because the thickness can be adjusted continuously, compare prior art and change the electrical impedance through changing the transducer material matter, the technical scheme of this application can obtain bigger adjusting range, and has reduced the required cost of adjusting electrical impedance.
It should be noted that the electrical impedance of the external circuit (i.e., the ultrasonic detection system) is generally smaller than the electrical impedance of the ultrasonic transducer probe, and therefore the data presented in this application is the data for reducing the ultrasonic transducer probe.
Furthermore, after the thickness of the piezoelectric material blocks 103 of each ultrasonic transducer probe unit is determined, the arrangement sequence of the piezoelectric material blocks 103 can be changed to change the energy distribution of each resonance point, so as to achieve the expected effect.
Since the ultrasonic transducer probe can obtain the maximum generated power at the resonance point and the anti-resonance point, thereby greatly increasing the transmission and reception range of the frequency of the transducer, the impedance adjustment in the present application is by default the adjustment of the impedance of the resonance point and the anti-resonance point.
An ultrasonic transducer probe with the working frequency of 3MHz is designed and manufactured after two ultrasonic transducer probe units are stacked, and the specific results are shown in fig. 12 to 14 by comparing the ultrasonic transducer probe provided by the invention with an ultrasonic imager manufactured by adopting a traditional single-layer piezoelectric material block 103 in the prior art through electrical and acoustic performance analysis;
FIGS. 12 and 13 are graphs comparing the magnitude of the electrical impedance of the resonance point of the ultrasonic transducer probe of the present invention and the ultrasonic transducer probe of the prior art;
as can be seen from fig. 12 to 13, in the case of substantially similar frequencies, the electrical impedance of the ultrasound transducer probe adopting the present invention is reduced to about one fourth of the electrical impedance of the conventional ultrasound transducer probe, and is closer to the electrical impedance of the detection system of the ultrasound imager, thereby effectively improving the electrical matching capability between the ultrasound imager device and the detection system, and the electrical phase curves of the two structures are substantially consistent.
FIG. 14 is an acoustic echo versus spectrum plot for an ultrasound transducer probe of the present invention and a prior art ultrasound transducer probe, wherein FIGS. 14(a) and 14(b) are echo and spectrum test results for an ultrasound transducer probe of the present invention; fig. 14(c) and 14(d) are echo and spectrum test results of a prior art ultrasonic transducer probe.
The partial abbreviations in FIG. 14 are explained as follows:
LS: loop Sensitivity (Loop Sensitivity) of the ultrasound transducer probe, representing the efficiency of the energy of the ultrasound transducer probe, high Sensitivity representing high conversion efficiency;
t6: the signal strength of the ultrasonic transducer probe is reduced by the pulse length corresponding to 6 dB;
t20: the signal strength of the ultrasonic transducer probe is reduced by 20dB corresponding to the pulse length;
peak: the frequency corresponding to the maximum amplitude of the echo signal of the ultrasonic transducer probe in the frequency domain bandwidth;
FC: a center frequency of the ultrasound transducer probe;
b6: the ultrasonic transducer probe is reduced by 6dB of bandwidth relative to the maximum amplitude in the frequency domain range;
b20: the ultrasonic transducer probe has a bandwidth reduced by 20dB relative to the maximum amplitude in the frequency domain.
As can be seen from the test results in fig. 14, due to the parallel structure provided by the present invention, the echo of the ultrasonic imager obtains a stronger echo signal, as shown in the figure, the echo Loop Sensitivity (LS) of the ultrasonic imager is enhanced from the conventional-60.21 dB (shown in fig. 14 (c)) to-58.81 dB (shown in fig. 14 (a)) of the echo loop sensitivity of the ultrasonic imager in the present invention; the signal strength is enhanced by about 1.5 dB.
The-20 dB pulse length of the ultrasonic imager is an important influence parameter of the longitudinal imaging resolution of the transducer, and generally, the longer the pulse length is, the lower the longitudinal imaging resolution of the ultrasonic imager is; with the different configurations of the block 103 design of piezoelectric material, the pulse length (T20) that affects the transducer imaging resolution also decreases from 1.01 μ s for the conventional prior art design configuration (as shown in fig. 14 (c)) to 0.982 μ s for the present invention (as shown in fig. 14 (a)).
Comparing the performance of the ultrasonic transducer probe with the two structural designs according to the corresponding frequency spectrums, fig. 14(b) has a certain improvement in-6 dB bandwidth and an effective improvement in-20 dB bandwidth under the condition that the center frequencies are substantially the same as those of fig. 14 (d).
Therefore, a conclusion can be drawn from an ultrasonic transducer probe manufacturing example, and compared with an ultrasonic transducer probe adopting the piezoelectric material block 103 with the traditional structure in the prior art, the ultrasonic transducer probe adopting the material of the invention can obtain higher sensitivity, resolution and bandwidth indexes due to the effective improvement of the electrical property.
Fig. 1 is a front view of the present embodiment, in which the lower block 103 of piezoelectric material is clearly thicker than the upper block 103 of piezoelectric material.
In the embodiment, different resonance points and anti-resonance points of the device are obtained by changing the thickness relationship between the piezoelectric material blocks 103a and 103b of each layer, the frequency response of the transducer probe is modulated, and the electrical impedance of the ultrasonic transducer probe can be further regulated and controlled to meet different actual requirements. Taking the two-layer structure as an example, there is a change effect of the electrical impedance curve of fig. 15.
From the results of fig. 15, it can be seen that when the two blocks 103 of piezoelectric material connected in parallel are different in thickness, not less than two sets of resonance points and anti-resonance points can be obtained. While the multi-resonance frequency is benefited, the adjustment and control effects of the thickness change on the resonance point and the anti-resonance point take the double-lamination, the same piezoelectric material block 103, no matching layer, and no backing as examples (the emitting surface is above, the piezoelectric material block 103A is below, and the piezoelectric material block 103B is above), and the data are as follows:
the total thickness of the first and second sheets is a fixed value.
The total thickness is 1mm, the change of the resonance point and the anti-resonance point is not related to the thickness sequence, and only changes along with the thickness difference of each laminated layer, when the thicknesses are equal, the number of the resonance point and the anti-resonance point is changed into a group again, the impedance of the anti-resonance point 1 reaches the maximum, at this time, the frequency of the anti-resonance point of the second group of resonance points is not counted, the impedance amplitude is recorded as 0, and the corresponding data result is shown in table 1.
TABLE 1
And secondly, the thickness of the single sheet is a fixed value.
When the thickness of the lower piezoelectric material block 103 is fixed to be 0.5mm, the number of the resonance points and the number of the anti-resonance points are changed into one group again along with the increase of the thickness of the upper piezoelectric material block 103, the impedance of the anti-resonance point 1 reaches the maximum, the frequency of the anti-resonance points of the second group is not counted, and the impedance amplitude is recorded as 0. Data results are shown in table 2.
TABLE 2
From the above data, it can be seen that at the first resonance point, the impedance amplitude of the block of piezoelectric material 103 is related to the thickness of the block of piezoelectric material 103 as shown in fig. 16, and as the thickness of the monolithic block of piezoelectric material 103 increases, the impedance amplitude at the resonance point tends to increase.
The fitted curve is: y is 1.5042x2-0.964x + 0.3326;
variance R2＝1。
From the above data, it can be seen that at the first anti-resonance point, the impedance amplitude of the piezoelectric material block 103 is related to the thickness of the piezoelectric material block 103 as shown in fig. 17, and the impedance amplitude at the anti-resonance point increases with the thickness of the monolithic piezoelectric material block 103.
The fitted curve is: -5.6964x2+22.602 x-1.3971;
variance R2＝0.9902。
From the above data, it can be seen that at the second resonance point, the impedance of the block of piezoelectric material 103 is related to the thickness of the block of piezoelectric material 103 as shown in fig. 18, and the impedance amplitude decreases first and then increases as the thickness of one of the blocks of parallel piezoelectric material 103 increases.
The fitted curve is: y is 1.8464x2-5.2055x + 5.9694;
variance R2＝0.986。
From the above data, it can be seen that at the second anti-resonance point, the impedance of the block of piezoelectric material 103 is related to the thickness of the block of piezoelectric material 103 as shown in fig. 19, and the impedance amplitude at the anti-resonance point increases with the thickness of one of the blocks of parallel-connected piezoelectric materials 103.
The fitted curve is: -3.9882x2+18.179 x-12.518;
variance R2＝0.9993。
The invention also provides another ultrasound transducer probe, wherein a front view of an ultrasound transducer probe unit of an embodiment of the ultrasound transducer probe is shown in fig. 3, fig. 4 is a top view thereof, fig. 5 is a left view thereof, which is called an embodiment two, and includes a piezoelectric material block 103, a first electrode 101 and a second electrode 102;
the first electrode 101 and the second electrode 102 are disposed on a plurality of surfaces of the block 103 of piezoelectric material;
an isolation region 104 for insulating the first electrode 101 from the second electrode 102; the same electrodes of the adjacent ultrasonic transducer probe units are electrically connected;
the isolation regions 104 on the mutually contacted surfaces of the adjacent ultrasonic transducer probe units are partially or completely overlapped, so that the electrodes on two sides of the overlapped isolation regions 104 are in electroless connection;
the ultrasonic transducer probe comprises the ultrasonic transducer probe units of the piezoelectric material block 103 with different thicknesses, so that the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of an ultrasonic imaging system circuit of the ultrasonic imager;
the piezoelectric material block 103 is a rectangular sheet-shaped piezoelectric material block 103;
the first electrode 101 is disposed on the upper surface and the first side surface of the rectangular sheet-shaped piezoelectric material block 103;
the second electrode 102 is disposed on the lower surface and the second side surface of the rectangular sheet-shaped piezoelectric material block 103;
the second side surface is a surface opposite to the first side surface.
It should be noted in advance that, in practical use, the rectangular sheet-shaped ultrasonic transducer probe unit is widely used, and therefore, the specific embodiments of the present application are exemplified by the rectangular sheet-shaped ultrasonic transducer probe unit, but it should be noted that the protection scope of the present invention is not limited to the rectangular sheet-shaped ultrasonic transducer probe unit, for example, a circular sheet-shaped ultrasonic transducer probe is also within the protection scope of the present invention.
Further, the area of the first electrode 101 is equal to the area of the second electrode 102.
Still further, the above-mentioned pieces of piezoelectric material 103 include, but are not limited to, pieces of inorganic piezoelectric ceramic material, pieces of inorganic piezoelectric single crystal material, pieces of piezoelectric composite material, and pieces of organic piezoelectric material 103.
Note that the isolation region 104 shown in the figures is a region enclosed by a dotted line.
The electrodes of the ultrasonic transducer probe unit provided by the invention are not limited to be only located on two corresponding surfaces of the piezoelectric material block 103, but each electrode is located on at least two surfaces, in other words, the electrodes can continue to extend towards other adjacent surfaces after being covered with a pair of corresponding surfaces, so that the capacitance is increased, the electrical impedance of the ultrasonic transducer probe unit is further reduced, and the electrical impedance of the ultrasonic transducer probe unit is matched with the electrical impedance of an external system under the condition that the volume of the ultrasonic transducer probe unit is basically not changed.
On the basis of the second embodiment, the areas of the two electrodes are further enlarged to obtain a third embodiment, and the front view of the ultrasonic transducer probe unit is shown in fig. 6, and the top view and the left view are the same as the first embodiment, and include a piezoelectric material block 103, a first electrode 101, and a second electrode 102;
the first electrode 101 and the second electrode 102 are disposed on a plurality of surfaces of the block 103 of piezoelectric material;
an isolation region 104 for insulating the first electrode 101 from the second electrode 102; the same electrodes of the adjacent ultrasonic transducer probe units are electrically connected;
the isolation regions 104 on the mutually contacted surfaces of the adjacent ultrasonic transducer probe units are partially or completely overlapped, so that the electrodes on two sides of the overlapped isolation regions 104 are in electroless connection;
the ultrasonic transducer probe comprises the ultrasonic transducer probe units of the piezoelectric material block 103 with different thicknesses, so that the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of an ultrasonic imaging system circuit of the ultrasonic imager;
the piezoelectric material block 103 is a rectangular sheet-shaped piezoelectric material block 103;
the first electrode 101 is disposed on the upper surface, the first side surface, and the third side surface of the rectangular plate-shaped piezoelectric material block 103;
the second electrode 102 is disposed on the lower surface, the second side surface and the fourth side surface of the rectangular sheet-shaped piezoelectric material block 103;
the second side surface is a surface opposite to the first side surface; the fourth side surface is a surface opposite to the third side surface.
The difference between the present embodiment and the above embodiment is that the present embodiment further extends the surfaces of the first electrode 101 and the second electrode 102, and the rest of the structures are the same as the above embodiment, and therefore, the detailed description thereof is omitted.
The present embodiment further enlarges the surface areas of the first electrode 101 and the second electrode 102, increases the capacitance, and reduces the electrical impedance of the ultrasound transducer probe unit to match the electrical impedance of an external system, under the condition that the volume of the ultrasound transducer probe unit is hardly changed.
On the basis of the second embodiment, the location of the isolation region 104 is defined, and a fourth embodiment is obtained, where a front view of the ultrasound transducer probe unit is shown in fig. 7, and includes a piezoelectric material block 103, a first electrode 101, and a second electrode 102;
the first electrode 101 and the second electrode 102 are disposed on a plurality of surfaces of the block 103 of piezoelectric material;
an isolation region 104 for insulating the first electrode 101 from the second electrode 102; the same electrodes of the adjacent ultrasonic transducer probe units are electrically connected;
the isolation regions 104 on the mutually contacted surfaces of the adjacent ultrasonic transducer probe units are partially or completely overlapped, so that the electrodes on two sides of the overlapped isolation regions 104 are in electroless connection;
the ultrasonic transducer probe comprises the ultrasonic transducer probe units of the piezoelectric material block 103 with different thicknesses, so that the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of an ultrasonic imaging system circuit of the ultrasonic imager;
the piezoelectric material block 103 is a rectangular sheet-shaped piezoelectric material block 103;
the first electrode 101 is disposed on the upper surface and the first side surface of the rectangular sheet-shaped piezoelectric material block 103;
the second electrode 102 is disposed on the lower surface and the second side surface of the rectangular sheet-shaped piezoelectric material block 103;
the second side surface is a surface opposite to the first side surface;
the isolation regions 104 are on the upper surface and the lower surface;
the isolation region 104 at the top surface is symmetrical about a perpendicular bisector at a normal height of the top surface;
the isolation region 104 on the lower surface is symmetrical about a perpendicular bisector at a normal height of the lower surface;
the standard height is a height in parallel with the first side surface and the second side surface in the upper surface or the lower surface.
The difference between the present embodiment and the above embodiments is that the present embodiment defines the location of the isolation region 104 and the shape of the isolation region 104, and the rest of the structure is the same as the above embodiments, and will not be described herein again.
It should be particularly noted that the essential limitation in the present embodiment is the location of the isolation region 104 and the shape of the isolation region 104, and therefore, the first electrode 101 and the second electrode 102 may be located on the upper surface, the first side surface and the lower surface, and the second electrode 102 may be located on the upper surface, the second side surface and the lower surface, in addition to the description in the above embodiment, as shown in the front view of fig. 8, and for convenience of understanding, the perspective view of the above-mentioned solution of fig. 11 is shown in fig. 9.
Taking the ultrasonic transducer probe unit of fig. 9 as an example, a method for manufacturing an ultrasonic transducer probe unit is provided, which includes performing gold plating on four surfaces except for two surfaces with the smallest area of a rectangular sheet-shaped piezoelectric material block 103 shown in fig. 9, cutting the gold layer along the position shown by a groove in the figure by a method including but not limited to cutting, obtaining a separated first electrode 101 and a separated second electrode 102, and forming an isolation region 104.
In addition, the solution of the present embodiment can be combined with the solution of the fourth embodiment to produce an ultrasound transducer probe unit that satisfies the conditions of the two embodiments, and the front view of the solution is shown in fig. 10, and the top view thereof is shown in fig. 11.
Furthermore, the isolation region 104 is a linear isolation region 104.
The specific embodiment defines the shape of the isolation region 104 and the position of the isolation region 104, and the isolation regions 104 are located on the upper and lower surfaces and are symmetrical along the high midperpendicular, so that the ultrasonic transducer probe unit is more convenient to stack and mount, and is more space-saving to connect in parallel, and the ultrasonic transducer probe unit as described in the first specific embodiment is formed.
The invention also provides an ultrasonic imager, which comprises the ultrasonic imaging system circuit and the ultrasonic transducer probe as described in the first or second embodiment. The ultrasonic transducer probe provided by the invention comprises a plurality of ultrasonic transducer probe units which are arranged in a stacked mode; the ultrasonic transducer probe unit comprises a piezoelectric material block 103, a first electrode 101 and a second electrode 102; the first electrode 101 and the second electrode 102 are disposed on the surface of the block of piezoelectric material 103; an isolation region 104 for insulating the first electrode 101 from the second electrode 102; the isolation regions 104 on the surfaces of the adjacent ultrasonic transducer probe units, which are in contact with each other, are partially or completely overlapped, so that the electrodes on the two sides of the overlapped isolation regions 104 are in electroless connection, and the ultrasonic transducer probe comprises the ultrasonic transducer probe units of the piezoelectric material block 103 with different thicknesses, so that the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of an ultrasonic imaging system circuit. By changing the thickness of the piezoelectric material block 103, the electrical impedance of the ultrasonic transducer probe can be adjusted, so that the electrical impedance of the ultrasonic transducer probe is consistent with the electrical impedance of the ultrasonic imaging system circuit, and the closer the electrical impedance of the ultrasonic transducer probe is to the electrical impedance of the ultrasonic imaging system circuit, the higher the power which can be obtained by the ultrasonic transducer probe is, therefore, the technical scheme of the ultrasonic imaging system can effectively improve the working efficiency of the ultrasonic transducer probe and improve the energy utilization rate; in addition, because the thickness can be adjusted continuously, compare prior art and change the electrical impedance through changing the transducer material matter, the technical scheme of this application can obtain bigger adjusting range, and has reduced the required cost of adjusting electrical impedance.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the same element.
The ultrasonic transducer probe unit, the ultrasonic transducer probe and the ultrasonic imager provided by the invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. An ultrasonic transducer probe is characterized in that the ultrasonic transducer probe comprises a plurality of ultrasonic transducer probe units which are arranged in a stacked mode;
the ultrasonic transducer probe unit comprises a piezoelectric material block, a first electrode and a second electrode;
the first electrode and the second electrode are arranged on the surface of the piezoelectric material block;
an insulated isolation region exists between the first electrode and the second electrode; the same electrodes of the adjacent ultrasonic transducer probe units are electrically connected;
the isolation regions on the mutually contacted surfaces of the adjacent ultrasonic transducer probe units are partially or completely overlapped, so that the electrodes on the two sides of the overlapped isolation regions are in electroless connection;
under the condition that the total thickness of the ultrasonic transducer probe is kept unchanged, the ultrasonic transducer probe unit comprising the piezoelectric material blocks with different thicknesses enables the electrical impedance of the ultrasonic transducer probe to be consistent with the electrical impedance of an ultrasonic imaging system circuit of an ultrasonic imager.
2. The ultrasonic transducer probe of claim 1, wherein the block of piezoelectric material is a block of sheet piezoelectric material.
3. The ultrasonic transducer probe of claim 2, wherein the block of sheet piezoelectric material is a rectangular block of sheet piezoelectric material or a circular block of sheet piezoelectric material.
4. The ultrasonic transducer probe of claim 3, wherein the isolation regions are at upper and lower surfaces of the block of sheet piezoelectric material.
5. The ultrasonic transducer probe of claim 4, wherein when the block of sheet piezoelectric material is a rectangular block of sheet piezoelectric material, the isolation region at the upper surface is symmetric about a perpendicular bisector at a normal height of the upper surface;
the isolation area on the lower surface is symmetrical by taking a perpendicular bisector at the standard height of the lower surface as a symmetry center;
the standard height is a height in the upper surface or the lower surface, parallel to the first side surface and the second side surface;
the second side surface is a surface opposite to the first side surface.
6. The ultrasonic transducer probe of claim 5, wherein the first electrode is disposed on an upper surface and the first side surface of the block of rectangular sheet piezoelectric material;
the second electrode is arranged on the lower surface and the second side surface of the rectangular sheet-shaped piezoelectric material block.
7. The ultrasonic transducer probe of claim 6, wherein the isolation region is a linear isolation region.
8. The ultrasound transducer probe of claim 7, wherein the area of the first electrode is equal to the area of the second electrode.
9. The ultrasonic transducer probe of any one of claims 1 to 8, wherein the block of piezoelectric material comprises a block of inorganic piezoelectric ceramic material, a block of inorganic piezoelectric single crystal material, a block of piezoelectric composite material, and a block of organic piezoelectric material.
10. An ultrasound imager comprising ultrasound imaging system circuitry and an ultrasound transducer probe as claimed in any one of claims 1 to 9.
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| JP2005151560A (en) * | 2003-11-11 | 2005-06-09 | General Electric Co <Ge> | Method of manufacturing multilayer ceramic acoustic transducer |
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