CN105032749A - Multi-layer lamination ultrasonic transducer and manufacturing method thereof - Google Patents

Multi-layer lamination ultrasonic transducer and manufacturing method thereof Download PDF

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CN105032749A
CN105032749A CN201510400117.3A CN201510400117A CN105032749A CN 105032749 A CN105032749 A CN 105032749A CN 201510400117 A CN201510400117 A CN 201510400117A CN 105032749 A CN105032749 A CN 105032749A
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piezoelectric wafer
conductive region
layer
electrode
piezoelectric
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CN201510400117.3A
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Chinese (zh)
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欧阳波
刘建华
周丹
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深圳市理邦精密仪器股份有限公司
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Publication of CN105032749A publication Critical patent/CN105032749A/en

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Abstract

The invention provides a multi-layer ultrasonic transducer and a manufacturing method thereof. The multi-layer lamination ultrasonic transducer comprises a piezoelectric wafer assembly, and the piezoelectric wafer assembly comprises multiple piezoelectric wafers which are mutually bonded; the surface of each piezoelectric wafer is provided with multiple fractures, and the fractures divide an electrode layer of the corresponding piezoelectric wafer into multiple electrodes; the polarity of the electrodes of the bonding faces of the piezoelectric wafers which are mutually bonded is same; one side of the piezoelectric wafer assembly is bonded with at least one acoustic matching layer, the other side of the piezoelectric wafer assembly is bonded with at least one backing layer, the acoustic matching layer closest to the piezoelectric wafer assembly comprises a conducting area, or the backing layer closest to the piezoelectric wafer assembly comprises a conducting area. According to the multi-layer lamination ultrasonic transducer and the manufacturing method thereof, impedance of the piezoelectric wafers can be effectively reduced, and the problem of piezoelectric wafer vibration inhibiting caused by introduction of an additional coupling layer or a flexible circuit board can be solved.

Description

多层叠片超声换能器及其制造方法 The multilayer laminate ultrasound transducer and manufacturing method

技术领域 FIELD

[0001] 本发明涉及多层超声换能器及其制造方法,并且特别涉及具有改进振动特性的多层超声换能器及其制造方法。 [0001] The present invention relates to a method for producing a multilayer transducer and ultrasonic transducer, and more particularly to an improved vibration characteristics having a multilayer ultrasonic transducer and its manufacturing method.

背景技术 Background technique

[0002] 换能器是一种可以将电信号转换成机械信号的装置。 [0002] The transducer is a device that can convert electrical signals into mechanical signals. 例如,扬声器中的传感器可以将电信号转换成机械振动从而来产生声波。 For example, the sensor may be a speaker converting electrical signals into mechanical vibrations so as to generate acoustic waves. 同样传感器也经常被用来生成高频率的超声波以供使用,例如医学成像、无损检测等。 The same sensors are often used to generate high frequency ultrasonic waves for use, such as medical imaging, nondestructive testing.

[0003] 用于医疗成像的超声换能器由许多元件组成,而且元件之间的距离随着用户要求的不断提升也在不断的变小。 [0003] The ultrasound transducer for medical imaging by a number of elements, and the distance between elements With the increasing user requirements are constantly becomes small. 随着超声换能器中元件尺寸的减小,超声成像诊断系统中超声换能器和超声成像诊断系统之间的电阻抗失配正在成为亟待解决的严重问题。 As the ultrasound transducer in the transducer element size is reduced, the ultrasonic diagnostic imaging system electrical impedance between the ultrasonic transducer and the ultrasonic energy mismatch imaging diagnostic systems is becoming a serious problem to be solved.

[0004] 一般而言,换能器中的压电元件的阻抗在100欧姆至1000欧姆的范围内变化,而用于在超声换能器同超声成像诊断系统之间的通信电缆的阻抗一般在50欧姆至75欧姆范围内,他们之间呈现出很大的差异。 [0004] In general, the impedance of the piezoelectric transducer element is in the range of 100 ohms to 1000 ohms changes, the impedance for the communications cable between the ultrasound transducer with the ultrasound imaging diagnostic system generally transducer 50 ohms to 75 ohms, showing a great difference between them. 这种电阻抗失配会使得超声换能器的能量转换效率大大降低,反过来又会导致传感器的灵敏度下降和信噪比的上升,从而妨碍了对超声图像的信号的处理。 Such electrical impedance mismatch so that the ultrasound transducer is significantly reduced energy conversion efficiency, which in turn leads to increased sensitivity of the sensor and decrease the signal to noise ratio, thus preventing the processing of the ultrasound image signals.

[0005] 现有解决此问题的方法通常有两种:一种方法是通过外加并联电容的方式来相应的减小超声换能器的阻抗与成像系统间的阻抗失配问题,但是外加元件在某种程度上又提升了成本费用、制作的复杂程度等;另一种方法是相应的增大压电阵子与压电阵子之间的间距,但是由于阵子距离的增大又会出现旁瓣和栅瓣的问题,就会导致换能器的整体性能下降。 [0005] The conventional solution to this problem are usually two: one is the impedance mismatch between the parallel capacitor by applying an appropriate way to reduce the impedance of the ultrasonic transducer of the imaging system, but additional elements to some extent also enhance the cost, the complexity of the production; the other is a corresponding increase in the distance between the piezoelectric and piezo time around time around, but due to the increased distance will appear next time around lobes and grating lobe problem, it will lead to an overall decline in the performance of the transducer.

[0006] 如果同样厚度的压电晶片彼此间相互并联连接,那么阻抗与压电晶片数量之间的关系可以表示为:Z(N) =Z(1)/N2。 [0006] If the same thickness of the piezoelectric wafer are connected in parallel to each other, then the relationship between the impedance and the number of the piezoelectric wafer can be expressed as: Z (N) = Z (1) / N2. 其中N、Z分别表示压电晶片的数量、阻抗。 Wherein N, Z denote the number of the piezoelectric wafer, the impedance. 也就是说,随着压电晶片数量的增加,阻抗会不断的降低。 In other words, with the increase in the number of piezoelectric wafers, the impedance will continue to decrease. 这样,基于此原理就可以降低传感器压电元件的高阻抗,可以解决上面提到的阻抗失配问题。 Thus, based on this principle can reduce the high-impedance sensor of the piezoelectric element, the impedance mismatch can solve the problems mentioned above.

[0007] 然而,上面提到的这种形式的多层超声换能器,由于在压电晶片同声学匹配层之间添加一层柔性电路板或者其他的耦合层使得压电阵子具有振动特性差的缺点。 [0007] However, this form of the above-mentioned multilayer ultrasonic transducer, the addition of a layer of the flexible circuit board or other coupling layer between the piezoelectric wafer simultaneous learning matching layer having a time around the piezoelectric vibration characteristics shortcomings of poor. 例如,某些专利为了连接压电组件的电极在前后表面都形成了柔性电路板;具体结构为:在压电晶片组件的前表面形成具有几十微米厚度的柔性电路板,从而导致组件的振动特性变差。 For example, certain patents the piezoelectric electrode assembly for connecting the front and rear surfaces of the flexible circuit board is formed; specific configuration of: forming a flexible circuit board having a thickness of several tens of micrometers on the front surface of the piezoelectric wafer assembly to cause vibrations assembly characteristic deteriorates.

发明内容 SUMMARY

[0008] 鉴于此,本发明实施例提供一种多层叠片超声换能器及其制造方法,以在降低超声换能器中压电晶片的阻抗的同时,减小由于附加耦合层或者柔性电路板的引入而导致的抑制压电晶片振动的问题。 [0008] In view of this, embodiments provide a multilayer laminate of the present invention, an ultrasonic transducer and its manufacturing method change, in order to reduce the impedance of the ultrasonic transducer while the transducer in the piezoelectric wafer, the coupling is reduced due to the additional layer or flex circuit piezoelectric wafer suppressing vibration problem caused by the introduction of the plate.

[0009] 第一方面,本发明实施例提供了一种多层叠片超声换能器,所述多层叠片超声换能器包括: [0009] In a first aspect, embodiments of the present invention provides a multilayer laminate ultrasound transducer, the ultrasound transducer multilayer laminate comprising:

[0010] 压电晶片组件,所述压电晶片组件包含多个相互粘接的压电晶片; [0010] Piezoelectric wafer assembly, said assembly comprising a plurality of piezoelectric wafer piezoelectric wafer bonded to each other;

[0011] 其中,每个压电晶片的表面包含多个断口,所述多个断口将对应的压电晶片的电极层分隔为多个电极; [0011] wherein each piezoelectric wafer surface comprising a plurality of fracture, fracture of the plurality of piezoelectric wafer corresponding to the electrode layer divided into a plurality of electrodes;

[0012] 相互粘接的压电晶片的粘接面的电极的极性相同; [0012] the same polarity of the electrodes of the piezoelectric wafer bonding surface bonded to each other;

[0013] 所述压电晶片组件的一侧还粘接有至少一层声学匹配层, [0013] The side of the piezoelectric wafer bonded assembly further having at least one acoustic matching layer,

[0014] 所述压电晶片组件的另一侧还粘接有至少一层背衬层; [0014] The other side of the piezoelectric wafer bonded assembly further having at least one backing layer;

[0015] 其中,所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层包含一导电区域,或者所述至少一层背衬层中最靠近所述压电晶片组件的背衬层包含一导电区域。 [0015] wherein the at least one acoustic matching layer, an acoustic matching layer closest to the piezoelectric wafer assembly comprises a conductive region or the at least one backing layer closest to the piezoelectric wafer assembly The backing layer comprises a conductive region.

[0016] 第二方面,本发明实施例提供了一种制造多层叠片超声换能器的方法,所述多层叠片超声换能器包含多个压电晶片,所述方法包括: [0016] a second aspect, embodiments of the present invention provides a method of manufacturing a multi-layer stack of an ultrasonic transducer, said ultrasonic transducer multilayer laminate comprising a plurality of piezoelectric wafers, the method comprising:

[0017] 在每个压电晶片的表面形成多个断口,以通过所述多个断口将对应的压电晶片的电极层分隔为多个电极; [0017] The fracture is formed on the surface of each of the plurality of piezoelectric wafer, an electrode layer to fracture corresponding piezoelectric wafer through the plurality of partition into a plurality of electrodes;

[0018] 将多个所述形成多个断口的压电晶片粘接在一起形成压电晶片组件,其中,相互粘接的压电晶片的粘接面的电极的极性相同; Piezoelectric wafer bonding [0018] A plurality of the fracture together to form a plurality of piezoelectric wafer assembly, wherein the electrode of the same polarity of the bonding surface of the piezoelectric wafer bonded to each other;

[0019] 在所述压电晶片组件的一侧粘接至少一层声学匹配层,并在所述压电晶片组件的另一侧粘接至少一层背衬层; [0019] at least one acoustic matching layer to the adhesive side of the piezoelectric wafer assembly, and at least one layer of an adhesive backing on the other side of the piezoelectric wafer assembly;

[0020] 将所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层的一部分区域制作成一导电区域,或者将所述至少一层背衬层中最靠近所述压电晶片组件的背衬层的一部分区域制作成一导电区域。 [0020] The produced part of the regional acoustic matching layer of the at least one acoustic matching layer closest to the piezoelectric wafer assembly into a conductive region, or at least one layer of the backing layer closest to the piezoelectric partial region of the backing layer of the wafer assembly to create a single conductive region.

[0021] 本发明实施例与现有技术相比存在的有益效果是:本发明实施例将多个包含多个断口的压电晶片相互粘接在一起形成压电晶片组件,相互粘接的压电晶片的粘接面的电极的极性相同,从而可有效降低压电晶片的阻抗。 [0021] The advantageous effects compared with the prior art embodiment of the present invention is: The embodiment of the invention comprises a plurality of piezoelectric wafer bonded to each other together to form a plurality of fracture piezoelectric wafer assembly, press-bonded to each other the same electrical polarity of the electrodes of the bonding surface of the wafer, which can effectively reduce the impedance of the piezoelectric wafer. 而且,通过将声学匹配层或者背衬层的的一部分区域制作成导电区域,从而不需要在压电晶片组件与声学匹配层或背衬层之间使用其他的附加耦合层或者柔性电路板就可以直接将压电晶片的电极引导出来,减小了由于附加耦合层或者柔性电路板的引入而导致的抑制压电晶片振动的问题,具有较强的易用性和实用性。 Furthermore, a partial region of the acoustic matching layer or the backing layer by making a conductive region, so that no other additional layer or the flexible circuit board coupled between the piezoelectric wafer assembly acoustic matching layer or backing layer can the piezoelectric wafer is directly led out of the electrode, reducing the problems due to the introduction of an additional coupling layer or a flexible circuit board caused by vibration of the piezoelectric wafer suppressed, and ease of use with strong practicability.

附图说明 BRIEF DESCRIPTION

[0022] 为了更清楚地说明本发明实施例中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。 [0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings briefly described embodiments or the prior art needed to be used in describing the embodiments. Apparently, the drawings described below are merely Some embodiments of the present invention, those of ordinary skill in the art is concerned, without any creative effort, and may also obtain other drawings based on these drawings.

[0023] 图1是本发明实施例提供的多层叠片超声换能器的结构示意图; [0023] FIG. 1 is a schematic structural diagram of the multilayer stack provides the ultrasonic transducer of the embodiment of the present invention;

[0024] 图2是本发明实施例提供的另一多层叠片超声换能器的结构示意图; [0024] FIG. 2 is a schematic structural diagram of another multilayer stack provides the ultrasonic transducer of the embodiment of the present invention;

[0025] 图3是本发明实施例提供的另一多层叠片超声换能器的结构示意图; [0025] FIG. 3 is a schematic view of another embodiment of a multilayer laminate provides the ultrasonic transducer of the embodiment of the present invention;

[0026] 图4是本发明实施例提供的另一多层叠片超声换能器的结构示意图; [0026] FIG. 4 is a schematic structural diagram of a multi-layer laminate according to another embodiment of the ultrasonic transducer of the present invention;

[0027] 图5是本发明实施例提供的另一多层叠片超声换能器的结构示意图; [0027] FIG. 5 is a schematic structural diagram of a multi-layer laminate according to another embodiment of the ultrasonic transducer of the present invention;

[0028] 图6是本发明实施例提供的制造多层叠片超声换能器的方法的实现流程示意图。 [0028] FIG. 6 is a schematic diagram of the implementation flow of a method of manufacturing a multilayer stack provided an ultrasonic transducer of the present invention.

具体实施方式 Detailed ways

[0029] 在下面的描述中阐述了很多具体细节以便于充分理解本发明,但是本发明还可以采用其他不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似应用,因此本发明不受下面公开的具体实施例的限制。 [0029] numerous specific details are set forth in the following description in order to provide a thorough understanding of the present invention, but the present invention may also be in other ways other than described in the embodiment to employ skilled in the art without departing from the intension may present invention limiting example of the case do similar applications, the invention is not so specific embodiments disclosed below.

[0030] 其次,本发明结合示意图进行详细描述,在详述本发明实施例时,为便于说明,表示器件结构的剖面图会不依一般比例作局部放大,而且所述示意图只是示例,其在此不应限制本发明保护的范围。 [0030] Next, the present invention is described in detail in conjunction with a schematic view, while embodiments of the invention described in detail, for ease of illustration, a sectional view showing a configuration of the device will be enlarged usual scale, and the diagram is merely an example, which is herein It should not limit the scope of the present invention. 此外,在实际制作中应包含长度、宽度及深度的三维空间尺寸。 Further, it should be included in the actual production of three spatial dimensions length, width and depth. [0031 ] 为了说明本发明所述的技术方案,下面通过具体实施例来进行说明。 [0031] In order to describe the technical solutions of the present invention will be illustrated by specific examples.

[0032] 图1示出了本发明实施例提供的多层叠片超声换能器的结构,为了便于说明,仅示出了与本发明实施例相关的部分。 [0032] FIG. 1 shows the present invention provides a multilayer laminate structure of ultrasonic transducers embodiment, for convenience of description, only the parts related to the embodiment of the present invention.

[0033] 所述多层叠片超声换能器包括: [0033] The multilayer laminate ultrasound transducer comprising:

[0034] 压电晶片组件,所述压电晶片组件包含多个相互粘接的压电晶片(图1中仅示出两个); [0034] Piezoelectric wafer assembly, said assembly comprising a plurality of piezoelectric wafer piezoelectric wafer bonded to each other (in FIG. 1 shows only two);

[0035] 如图1所示,分别在第一压电晶片20的第一主表面形成第一断口21,在第一压电晶片20的第二主表面形成第二断口22,断口的位置可以是压电晶片的任意位置,尺寸不做限制。 Position [0035] As shown, a first fracture 21 are formed a first main surface 20 of the first piezoelectric wafer 1, forming a second fracture 22, the fracture of the first major surface of the second piezoelectric wafer 20 may be is any position, not limited in the size of the piezoelectric wafer. 通过所述第一断口21和第二断口22将所述第一压电晶片20的电极层分隔为第一电极23和第二电极24。 The fracture 21 by the first fracture and the second layer of the first electrode 22 of the piezoelectric wafer 20 is divided into a first electrode 23 and second electrode 24. 其中,第一电极23可以为正电极或负电极,同理第二电极24也可以为正电极或负电极。 Wherein, the first electrode 23 may be a positive electrode or a negative electrode, similarly to the second electrode 24 may be positive or negative electrode. 所述第一电极23和第二电极24都包括一部分环形区域的包边电极,以方便探头制作时导线的连接。 The first electrode 23 and second electrode 24 includes an electrode portion of annular edging region, to facilitate the connection of the probe wire production. 所述第一电极23和第二电极24从第一压电晶片20的一面延伸至相对的另一面,以将上下表面的电极连通在一起。 The first electrode 23 and second electrode 24 of the first piezoelectric wafer 20 extending to the opposite side of the other side, in communication with the upper and lower electrodes to the surface.

[0036] 与第一压电晶片20类似,在第二压电晶片30的第一主表面形成第三断口31,在第二压电晶片30的第二主表面形成第四断口32。 [0036] Similarly to the first piezoelectric wafer 20, the third fracture 31 is formed a first main surface of the second piezoelectric wafer 30, the fracture 32 is formed on the fourth major surface of the second piezoelectric second wafer 30. 通过所述第三断口31和第四断口32将所述第二压电晶片30的电极层分隔为第三电极33和第四电极34。 The partition 33 and the fourth electrode to the third electrode layer 34 through the electrode 31 of the third and fourth fracture fracture 32 to the second piezoelectric wafer 30. 其中,第三电极33可以为正电极或负电极,同理第四电极34也可以为正电极或负电极。 Wherein the third electrode 33 may be a positive or negative electrode, similarly to the fourth electrode 34 may be positive or negative electrode. 所述第三电极33和第四电极34都包括一部分环形区域的包边电极,以方便探头制作时导线的连接。 The third electrode 33 and fourth electrode 34 includes an electrode portion of the wrapping annular region, to facilitate the connection of the probe wire production. 所述第三电极33和第四电极34从第二压电晶片30的一面延伸至相对的另一面,以将上下表面的电极连通在一起。 The third electrode 33 and fourth electrode 34 extends from the second side of the piezoelectric wafer 30 to the opposite side, to the upper and lower surfaces of the electrode communicates with.

[0037] 在所述第一压电晶片20与所述第二压电晶片30形成断口后,将所述第一压电晶片20与所述第二压电晶片30相互粘接形成压电晶片组件100,以降低压电晶片的阻抗。 [0037] In the first piezoelectric wafer 20 after the fracture is formed and the second piezoelectric wafer 30, the piezoelectric wafer 20 is formed first piezoelectric wafer 30 and the second piezoelectric wafer bonded to each other assembly 100, in order to reduce the impedance of the piezoelectric wafer. 其中,相互粘接的压电晶片的粘接面的电极的极性相同。 Wherein the same polarity of the electrodes of the piezoelectric wafer bonding surface bonded to each other.

[0038] 另外,如图1所示,压电晶片20的第一电极23同压电晶片30的第四电极34接触形成一个共同电极节点,即第一电极节点36。 [0038] Further, as shown, piezoelectric wafer 20 in contact with the first electrode 23 of the fourth electrode 34 with the piezoelectric wafer 30 is formed a common electrode node 1, i.e., the first electrode node 36. 相同的,压电晶片30的第三电极33同压电晶片20的第二电极24接触形成另一个共同的电极节点,即第二电极节点35。 Same, the third electrode 30 of the piezoelectric wafer 33 Another common electrode node in contact with the second electrode 24 of the piezoelectric wafer 20, i.e., the second electrode node 35. 在多种形式的压电晶片组件下,通过第二断口22和第三断口31连接而成的沟槽210将第一电极节点36和第二电极节点35分开。 In the various forms of piezoelectric wafer assembly 210 will be separated by a second fracture groove 22 and the third fracture 31 formed by connecting the first electrode and the second electrode node 36 node 35.

[0039] 图2示出了本发明实施例提供的另一多层叠片超声换能器的结构,为了便于说明,仅示出了与本发明实施例相关的部分。 [0039] FIG. 2 shows an embodiment of the present invention further provides a multilayer laminate structure of ultrasonic transducers embodiment, for convenience of description, only the parts related to the embodiment of the present invention.

[0040] 如图2所示,在获得压电晶片组件100后,本实施例进一步包括: [0040] As shown, after obtaining the piezoelectric wafer assembly 100, the present Example 2 further comprising:

[0041] 在所述压电晶片组件100的一侧粘接至少一层声学匹配层(图2中仅示出两层声学匹配层,即41和42),并在所述压电晶片组件100的另一侧粘接至少一层背衬层(图2中仅示出一层背衬层,即43)。 [0041] In the adhesive side of the piezoelectric wafer assembly 100 of the at least one acoustic matching layer (in FIG. 2 shows only two acoustic matching layers, i.e. 41 and 42), and said piezoelectric wafer assembly 100 at least one layer of adhesive on the other side of the backing layer (in FIG. 2 shows only one layer of the backing layer, i.e., 43).

[0042] 将声学匹配层41 (即所述至少一层声学匹配层中最靠近所述压电晶片组件100的声学匹配层)的一部分区域制作成第一导电区域44,如图2中的实线部分所示,将声学匹配层41的导电区域44同压电晶片20 (即所述压电晶片组件100中最靠近该声学匹配层的压电晶片)的第二电极24耦合在一起,在所述第一导电区域44的上表面设置与所述第一导电区域44相连接的铜箔46,通过所述铜箔46将所述压电晶片组件100的接地电极传导出来。 [0042] The acoustic matching layer 41 (i.e., the acoustic matching layer piezoelectric wafer assembly 100 of the at least one acoustic matching layer closest to) a portion of the region made to first conductive region 44, as shown in FIG. 2 solid line portion, the coupling conductive region 44 of the acoustic matching layer 41 with the piezoelectric wafer 20 (i.e., the piezoelectric wafer piezoelectric wafer assembly 100 is closest to the acoustic matching layer) together with a second electrode 24, in said first conductive region 44 is provided on the surface of the copper foil 44 is connected to first conductive region 46, the conductive foil out of the ground electrode 46 through the piezoelectric wafer assembly 100. 通过铜箔46将压电晶片组件100的接地电极传导出来同柔性电路板相接而不需要在压电晶片组件同声学匹配层41之间加入柔性电路板从而消除了柔性电路板对于压电晶片组件100振动的抑制作用。 A copper foil ground electrode 46 by the conductive piezoelectric wafer assembly 100 out of contact with the flexible circuit board without the need for simultaneous learning matching layer between the piezoelectric wafer assembly of the flexible circuit board 41 is added to eliminate the flexible circuit board to the piezoelectric inhibition wafer assembly 100 vibrations.

[0043] 另外,在压电晶片30与背衬层43之间还包括铜箔45。 [0043] Further, between the wafer 30 and the piezoelectric layer 43 further comprises a copper backing 45.

[0044] 图3示出了本发明实施例提供的另一多层叠片超声换能器的结构,为了便于说明,仅示出了与本发明实施例相关的部分。 [0044] FIG. 3 illustrates the present invention according to another embodiment of the multilayer laminate structure of ultrasonic transducers embodiment, for convenience of description, only the parts related to the embodiment of the present invention.

[0045] 如图3所示,在获得压电晶片组件100后,本实施例进一步包括: [0045] 3, after obtaining the piezoelectric wafer assembly 100 of the present embodiment further includes:

[0046] 在所述压电晶片组件100的一侧粘接至少一层声学匹配层(图3中仅示出两层声学匹配层,即41和42),并在所述压电晶片组件100的另一侧粘接至少一层背衬层(图3中仅示出一层背衬层,即43)。 [0046] In the adhesive side of the piezoelectric wafer assembly 100 of the at least one acoustic matching layer (in FIG. 3 shows only two acoustic matching layers, i.e. 41 and 42), and said piezoelectric wafer assembly 100 at least one layer of adhesive on the other side of the backing layer (FIG. 3 shows only one layer of the backing layer, i.e., 43).

[0047] 将声学匹配层41 (即所述至少一层声学匹配层中最靠近所述压电晶片组件100的声学匹配层)的一部分区域制作成第二导电区域44,并将所述第二导电区域44制作成如PCB板的通孔结构,在通孔的孔壁圆柱面上镀上一层导电金属,用以连通所述第二导电区域44的上下表面,并将所述第二导电区域44的上表面的电极47与所述第二导电区域44的下表面的电极48通过所述通孔结构中的孔洞连接在一起。 [0047] The acoustic matching layer 41 (i.e. the at least one acoustic matching layer is the acoustic matching layer closest to the piezoelectric wafer assembly 100) a portion of the region made to second conductive region 44, and the second conductive region 44 made into structures such as the through hole of the PCB, plating the hole wall of the through hole of the cylindrical surface a layer of a conductive metal, for communicating the upper and lower surfaces of the second conductive region 44, and the second conductive electrodes on the surface of the region 44 48 is connected to the electrode 47 of the lower surface of the second conductive region 44 through the through-holes with the pore structure. 在所述第二导电区域44的上表面设置与所述第二导电区域44相连接的铜箔46,通过所述铜箔46将所述压电晶片组件100的接地电极传导出来。 44 disposed on the surface of the copper foil and the second conductive region 44 is connected to the second conductive region 46, a conductive foil out of the ground electrode 46 through the piezoelectric wafer assembly 100. 通过铜箔46将压电晶片组件100的接地电极传导出来同柔性电路板相接而不需要在压电晶片组件同声学匹配层41之间加入柔性电路板从而消除了柔性电路板对于压电晶片组件100振动的抑制作用。 A copper foil ground electrode 46 by the conductive piezoelectric wafer assembly 100 out of contact with the flexible circuit board without the need for simultaneous learning matching layer between the piezoelectric wafer assembly of the flexible circuit board 41 is added to eliminate the flexible circuit board to the piezoelectric inhibition wafer assembly 100 vibrations.

[0048] 另外,在压电晶片30与背衬层43之间还包括铜箔45。 [0048] Further, between the wafer 30 and the piezoelectric layer 43 further comprises a copper backing 45.

[0049] 图4示出了本发明实施例提供的另一多层叠片超声换能器的结构,为了便于说明,仅示出了与本发明实施例相关的部分。 [0049] FIG. 4 shows according to another embodiment of the present invention, a multilayer laminate structure of ultrasonic transducers embodiment, for convenience of description, only the parts related to the embodiment of the present invention.

[0050] 如图4所示,在获得压电晶片组件100后,本实施例进一步包括: [0050] As shown, after obtaining the piezoelectric wafer assembly 100, the present embodiment 4 further comprising:

[0051] 在所述压电晶片组件100的一侧粘接至少一层声学匹配层(图4中仅示出两层声学匹配层),并在所述压电晶片组件100的另一侧粘接至少一层背衬层(图4中仅示出一层背衬层,即51)。 [0051] In the adhesive side of the piezoelectric wafer assembly 100 of the at least one acoustic matching layer (in FIG. 4 shows only two acoustic matching layer), and adhered to the other side of the piezoelectric wafer assembly 100 followed by at least one layer of the backing layer (in FIG. 4 shows only one layer of the backing layer, i.e., 51).

[0052] 如图4所示,将背衬层51的一部分区域制作成第三导电区域54,如图4中的实线部分所示。 [0052] As shown, a portion of the region 51 of the backing layer 4 made into the third conductive region 54, the solid line in FIG. 4 FIG. 将所述第三导电区域54与压电晶片30(即所述压电晶片组件中最靠近该背衬层的压电晶片)的第三电极33相耦合,从而可以将柔性电路板直接与所述第三导电区域54相连将压电组件100的信号电极引导出来与柔性电路板52相接,接地电极通过上面的铜箔53引导出来;而不需要在背衬层51和压电晶片30之间添加附加的耦合层。 The third conductive region 54 and the piezoelectric wafer 30 (i.e., the piezoelectric wafer assembly closest to the backing layer piezoelectric wafer) is coupled to the third electrode 33, so that the flexible circuit board may be directly with the said third conductive region 54 is connected to the signal electrode of the piezoelectric assembly 100 is led out of contact with the flexible circuit board 52, the ground electrode led out through the upper foil 53; without the backing layer 51 and the piezoelectric wafer 30 in Add additional coupling interlayer.

[0053] 图5示出了本发明实施例提供的另一多层叠片超声换能器的结构,为了便于说明,仅示出了与本发明实施例相关的部分。 [0053] FIG. 5 shows an embodiment of the present invention further provides a multilayer laminate structure of ultrasonic transducers embodiment, for convenience of description, only the parts related to the embodiment of the present invention.

[0054] 如图5所示,在获得压电晶片组件100后,本实施例进一步包括: [0054] FIG. 5, after obtaining the piezoelectric wafer assembly 100, the present embodiment further includes:

[0055] 在所述压电晶片组件100的一侧粘接至少一层声学匹配层(图5中仅示出两层声学匹配层),并在所述压电晶片组件100的另一侧粘接至少一层背衬层(图5中仅示出一层背衬层,即51)。 [0055] In the adhesive side of the piezoelectric wafer assembly 100 of the at least one acoustic matching layer (FIG. 5 shows only two acoustic matching layer), and adhered to the other side of the piezoelectric wafer assembly 100 followed by at least one layer of the backing layer (FIG. 5 shows only one layer of the backing layer, i.e., 51).

[0056] 如图5所示,将背衬层51的一部分区域制作成第四导电区域54,并将所述第四导电区域54制作成如PCB板的通孔结构,在通孔的孔壁圆柱面上镀上一层导电金属,用以连通所述第四导电区域54的上下表面,并将所述第四导电区域54的上表面的电极55与所述第四导电区域54的下表面的电极56通过所述通孔结构中的孔洞连接在一起,从而可以将柔性电路板52直接与所述第四导电区域54相连将压电组件100的信号电极引导出来与柔性电路板52相接,接地电极通过上面的铜箔53引导出来;而不需要在背衬层51和压电晶片30之间添加附加的耦合层,诸如柔性电路板等。 [0056] FIG 5, the partial region of the backing layer 51 made of a fourth conductive region 54, and the fourth conductive region 54 made into structures such as the through hole of the PCB, the hole wall of the through hole plating a conductive metal layer on a cylindrical surface for communicating upper and lower surfaces of the fourth conductive region 54, and the upper surface of the electrode 54 to fourth conductive region 55 and the lower surface of the fourth conductive region 54 the electrode 56 is connected through the via holes in the structure together so that the flexible circuit board 52 can be of the fourth conductive region 54 is directly connected to the signal electrode of the piezoelectric assembly 100 is led out of contact with the flexible circuit board 52 , the ground electrode led out through the upper foil 53; without the need to add additional coupling layer between the backing layer 51 and the piezoelectric wafer 30, such as a flexible circuit board.

[0057]图6为本发明实施例提供的制造多层叠片超声换能器的方法的实现流程,所述多层叠片超声换能器包含多个压电晶片,其主要包括以下步骤: [0057] FIG. 6 is provided to achieve flow of the method for manufacturing a multilayer laminate embodiment of the ultrasonic transducer of the present invention, the multilayer laminate comprising a plurality of ultrasonic transducer piezoelectric wafer, which includes the following steps:

[0058] 步骤S601,在每个压电晶片的表面形成多个断口,以通过所述多个断口将对应的压电晶片的电极层分隔为多个电极; [0058] step S601, the plurality of fracture is formed on the surface of each of the piezoelectric wafer, an electrode layer to fracture corresponding piezoelectric wafer through the plurality of partition into a plurality of electrodes;

[0059] 其中,所述断口的位置可以是压电晶片的任意位置,尺寸不做限制。 [0059] wherein, said fracture position is any position of the piezoelectric wafer is not limited in size. 各电极之间都包括一部分环形区域的包边电极,以方便探头制作时导线的连接。 Hemming electrode portion comprises an annular region between the electrodes to facilitate making the probe connecting wires.

[0060] 步骤S602,将多个所述形成多个断口的压电晶片粘接在一起形成压电晶片组件,其中,相互粘接的压电晶片的粘接面的电极的极性相同; Piezoelectric wafer bonding [0060] step S602, a plurality of the fracture are formed together to form a plurality of piezoelectric wafer assembly, wherein the same polarity of the electrodes of the piezoelectric wafer bonded to each other adhesive face;

[0061] 步骤S603,在所述压电晶片组件的一侧粘接至少一层声学匹配层,并在所述压电晶片组件的另一侧粘接至少一层背衬层; [0061] step S603, the acoustic matching layer on at least one side of the piezoelectric wafer bonding component, and at least one layer of an adhesive backing on the other side of the piezoelectric wafer assembly;

[0062] 步骤S604,将所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层的一部分区域制作成一导电区域,或者将所述至少一层背衬层中最靠近所述压电晶片组件的背衬层的一部分区域制作成一导电区域。 [0062] step S604, the regional acoustic matching layer portion of said at least one acoustic matching layer closest to the piezoelectric wafer assembly to create a single conductive region, at least one layer or the backing layer closest to the said partial region of the backing layer piezoelectric wafer assembly to create a single conductive region.

[0063] 优选的,将所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层的一部分区域制作成第一导电区域,并将所述第一导电区域与所述压电晶片组件中最靠近该声学匹配层的压电晶片的电极相耦合; [0063] Preferably, the at least one acoustic matching layer closest to the regional acoustic matching layer portion of the piezoelectric wafer assembly to prepare the first conductive region and the first conductive region and the pressure electrode assembly closest to the wafer of the piezoelectric wafer of the acoustic matching layer is coupled;

[0064] 在所述第一导电区域的上表面设置与所述第一导电区域相连接的铜箔,通过所述铜箔将所述压电晶片组件的接地电极传导出来。 [0064] The upper surface of the first conductive region of a copper foil with the first conductive region is connected through the copper foil ground electrode of the piezoelectric wafer assembly out of conduction.

[0065] 优选的,将所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层的一部分区域制作成第二导电区域,并将所述第二导电区域制作成通孔结构; [0065] Preferably, the at least one acoustic matching layer closest to the regional acoustic matching layer portion of the piezoelectric wafer is prepared as a component of the second conductive region and the second conductive region made into a through hole structure;

[0066] 在所述通孔结构中的孔壁圆柱面上镀一层导电金属,用以连通所述第二导电区域的上下表面,并将所述第二导电区域的上表面的电极与所述第二导电区域的下表面的电极通过所述通孔结构中的孔洞相连接; [0066] The cylindrical surface of the bore wall structure in the through hole plating layer of conductive metal, for communication with the second conductive regions of the upper and lower surfaces and the upper surface of the second electrode and the conductive region said lower surface of the second conductive electrode region is connected through the via hole structure;

[0067] 在所述第二导电区域的上表面设置与所述第二导电区域相连接的铜箔,通过所述铜箔将所述压电晶片组件的接地电极传导出来。 [0067] The upper surface of the second conductive region of a copper foil and the second conductive area is connected by a copper foil ground electrode of the piezoelectric wafer assembly out of conduction.

[0068] 优选的,将所述至少一层背衬层中最靠近所述压电晶片组件的背衬层的一部分区域制作成第三导电区域,并将所述第三导电区域与所述压电晶片组件中最靠近该背衬层的压电晶片的电极相耦合; [0068] Preferably, the at least one part of the region closest to the backing layer backing said piezoelectric wafer is prepared as a component of the third conductive region, and the third conductive region and the pressure electrical wafer assembly closest to the electrodes of the piezoelectric wafer is coupled to the backing layer;

[0069] 在所述第三导电区域的下表面设置与所述第三导电区域相连接的柔性电路板,通过所述柔性电路板将所述压电晶片组件的信号电极传导出来。 [0069] In the lower surface of the flexible circuit board of the third conductive region and the third conductive region is connected, through the flexible circuit board to the piezoelectric wafer component signal transduction out electrode.

[0070] 优选的,将所述至少一层背衬层中最靠近所述压电晶片组件的背衬层的一部分区域制作成第四导电区域,并将所述第四导电区域制作成通孔结构; [0070] Preferably, the at least one part of the region closest to the backing layer backing said piezoelectric wafer is prepared as a fourth conductive component region and the fourth conductive region made into a through hole structure;

[0071 ] 在所述通孔结构中的孔壁圆柱面上镀一层导电金属,用以连通所述第二导电区域的上下表面,并将所述第四导电区域的上表面的电极与所述第四导电区域的下表面的电极通过所述通孔结构中的孔洞相连接; [0071] The cylindrical surface of the bore wall structure in the through hole plating layer of conductive metal, for communication with the second conductive regions of the upper and lower surfaces and the upper surface of the fourth electrode and the conductive region said lower surface electrode of the fourth conductive region is connected through the via hole structure;

[0072] 在所述第四导电区域的下表面设置与所述第四导电区域相连接的柔性电路板,通过所述柔性电路板将所述压电晶片组件的信号电极传导出来。 [0072] In the lower surface of the flexible circuit board of the fourth conductive region and the fourth conductive region is connected, through the flexible circuit board to the piezoelectric wafer component signal transduction out electrode.

[0073] 综上所述,本发明实施例通过将多层断口压电晶片重叠在一起形成压电叠片,可有效降低压电晶片的阻抗,从而减小超声换能器与超声成像诊断系统之间的阻抗失配问题。 [0073] In summary, embodiments of the present invention by the multilayer piezoelectric wafer fracture superimposed together to form a piezoelectric stack, can effectively reduce the impedance of the piezoelectric wafer, thereby reducing the ultrasound transducer and the ultrasound imaging diagnostic systems impedance mismatch between problem. 另外,通过将声学匹配层或者背衬层的的一部分区域制作成导电区域,从而不需要在压电晶片组件与声学匹配层或背衬层之间使用其他的附加耦合层或者柔性电路板就可以直接将压电晶片的电极引导出来,减小了由于附加耦合层或者柔性电路板的引入而导致的抑制压电晶片振动的问题。 Further, a portion of the region of the acoustic matching layer or the backing layer by making a conductive region, so that no other additional layer or the flexible circuit board coupled between the piezoelectric wafer assembly acoustic matching layer or backing layer can the piezoelectric wafer is directly led out of the electrode, reducing the problems due to the introduction of an additional coupling layer or a flexible circuit board caused by vibration suppressing piezoelectric wafer. 因此,通过本发明实施例可提供具有改进的振荡特性、宽带宽和高灵敏度的多层超声换能器,具有较强的易用性和实用性。 Accordingly, embodiments of the present invention may be provided having improved oscillation characteristics, wide bandwidth and high sensitivity of the multilayer ultrasonic transducer having a strong and practical usability.

[0074] 另外,需要说明的是,上述实施例中的“第一、第二、第三、第四”仅为表述和指代的方便,以用于区别不同实体,并不意味着在本发明的具体实现方式中一定会有与之对应的“第一、第二、第三、第四”实体。 [0074] Further, it is noted that the above embodiments, "first, second, third, fourth," and refers to the expression of only the convenience, for distinguishing different entities, this does not mean specific implementation with the invention there will be "the first, second, third, fourth," corresponding to the entity.

[0075] 以上所述实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明实施例各实施例技术方案的精神和范围。 Example only [0075] In the above embodiments describe the technical solutions of the present invention, rather than limiting;. Although the present invention has been described in detail embodiments, those of ordinary skill in the art should be understood: it can still technical solutions described in the foregoing embodiments to modify, or to some technical features equivalents; as such modifications or replacements do not cause the essence of corresponding technical solutions to depart from the respective embodiments of the present invention the spirit and scope of the technical solutions .

Claims (10)

1.一种多层叠片超声换能器,其特征在于,所述多层叠片超声换能器包括: 压电晶片组件,所述压电晶片组件包含多个相互粘接的压电晶片; 其中,每个压电晶片的表面包含多个断口,所述多个断口将对应的压电晶片的电极层分隔为多个电极; 相互粘接的压电晶片的粘接面的电极的极性相同; 所述压电晶片组件的一侧还粘接有至少一层声学匹配层, 所述压电晶片组件的另一侧还粘接有至少一层背衬层; 其中,所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层包含一导电区域,或者所述至少一层背衬层中最靠近所述压电晶片组件的背衬层包含一导电区域。 A multilayer laminate ultrasound transducer, wherein said ultrasonic transducer multilayer laminate comprising: a piezoelectric wafer assembly, said assembly comprising a plurality of piezoelectric wafer piezoelectric wafer bonded to each other; wherein , the surface of each of the piezoelectric wafer comprises a plurality of fracture, fracture of the plurality of piezoelectric wafer corresponding to the plurality of electrodes of the electrode layers separated; the same polarity of the electrodes of the piezoelectric wafer bonded to each other adhesive surface ; said assembly further side of the piezoelectric wafer bonded to at least one acoustic matching layer, the other side of the piezoelectric wafer assembly further having at least one layer of an adhesive backing layer; wherein the at least one acoustic acoustic matching layer matching layer closest to the piezoelectric wafer assembly comprises a conductive region or the at least one backing layer the backing layer closest to said piezoelectric wafer assembly comprises a conductive region.
2.如权利要求1所述的多层叠片超声换能器,其特征在于, 所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层包含第一导电区域,所述第一导电区域与所述压电晶片组件中最靠近该声学匹配层的压电晶片的电极相耦合; 所述多层叠片超声换能器还包括与所述第一导电区域的上表面连接,将所述压电晶片组件的接地电极传导出来的铜箔。 2. The multilayer laminate as claimed in claim 1, said ultrasonic transducer, wherein said at least one acoustic matching layer, an acoustic matching layer closest to the piezoelectric wafer assembly comprises a first conductive region, said a first conductive region and the electrode of the piezoelectric wafer of the acoustic matching layer closest to the piezoelectric wafer assembly coupled; said multilayer laminate further comprises an ultrasonic transducer connected to the upper surface of the first conductive region, the ground electrode of the piezoelectric wafer assembly out conductive foil.
3.如权利要求1所述的多层叠片超声换能器,其特征在于, 所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层包含第二导电区域,所述第二导电区域具有通孔结构; 所述通孔结构中的孔壁圆柱面上镀有一层导电金属,所述第二导电区域的上表面的电极与所述第二导电区域的下表面的电极通过所述通孔结构中的孔洞相连接; 所述多层叠片超声换能器还包括与所述第二导电区域的上表面连接,将所述压电晶片组件的接地电极传导出来的铜箔。 The multilayer laminate as claimed in claim 1, said ultrasonic transducer, wherein said at least one acoustic matching layer, an acoustic matching layer closest to the piezoelectric wafer assembly comprising a second conductive region, the a second conductive region having a via structure; coated with a layer of conductive metal cylindrical surface of the hole wall of the through-hole structure, the electrode surface of the electrode on the lower surface of the second conductive region and the second conductive region are connected via the via hole structure; said multilayer laminate further comprises an ultrasonic transducer connected to the upper surface of the second conductive region, the ground electrode of the piezoelectric wafer assembly out of the conductive foil .
4.如权利要求1至3任一项所述的多层叠片超声换能器,其特征在于, 所述至少一层背衬层中最靠近所述压电晶片组件的背衬层包含第三导电区域,所述第三导电区域与所述压电晶片组件中最靠近该背衬层的压电晶片的电极相耦合; 所述多层叠片超声换能器还包括与所述第三导电区域的下表面连接,将所述压电晶片组件的信号电极传导出来的柔性电路板。 The multilayer laminate according to any one of claims 1 to ultrasound of transducer claim 3, characterized in that said at least one layer of the backing layer backing layer closest to the third piezoelectric wafer assembly comprising conductive region, said conductive region and the third piezoelectric wafer assembly closest to the back electrode layer of the piezoelectric wafer is coupled; said multilayer laminate further comprises a ultrasound transducer and said third conductive region the lower surface is connected to the signal electrode of the piezoelectric wafer assembly out of the conductive flexible circuit board.
5.如权利要求1至3任一项所述的多层叠片超声换能器,其特征在于, 所述至少一层背衬层中最靠近所述压电晶片组件的背衬层包含第四导电区域,所述第四导电区域具有通孔结构; 所述通孔结构中的孔壁圆柱面上镀有一层导电金属,所述第四导电区域的上表面的电极与所述第四导电区域的下表面的电极通过所述通孔结构中的孔洞相连接; 所述多层叠片超声换能器还包括与所述第四导电区域的下表面连接,将所述压电晶片组件的信号电极传导出来的柔性电路板。 The multilayer laminate comprising an ultrasonic according to claim 3, wherein said transducer, characterized in that said at least one layer of the backing layer backing layer closest to said fourth piezoelectric wafer assembly conductive region, said fourth region having a conductive via structure; coated with a layer of conductive metal cylindrical surface of the hole wall of the through-hole structure, the electrode surface of the fourth conductive region and the fourth conductive region the lower surface of the electrode is connected through the via hole structure; said multilayer laminate further comprises an ultrasonic transducer connected to the lower surface of the fourth conductive region of the signal electrode of the piezoelectric wafer assembly conduction out of the flexible circuit board.
6.一种制造多层叠片超声换能器的方法,其特征在于,所述多层叠片超声换能器包含多个压电晶片,所述方法包括: 在每个压电晶片的表面形成多个断口,以通过所述多个断口将对应的压电晶片的电极层分隔为多个电极; 将多个所述形成多个断口的压电晶片粘接在一起形成压电晶片组件,其中,相互粘接的压电晶片的粘接面的电极的极性相同; 在所述压电晶片组件的一侧粘接至少一层声学匹配层,并在所述压电晶片组件的另一侧粘接至少一层背衬层; 将所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层的一部分区域制作成一导电区域,或者将所述至少一层背衬层中最靠近所述压电晶片组件的背衬层的一部分区域制作成一导电区域。 6. A method for producing a multilayer laminate ultrasonic transducer, wherein said ultrasonic transducer multilayer laminate comprising a plurality of piezoelectric wafers, the method comprising: forming on a surface of each of the plurality of piezoelectric wafer a fracture, the fracture through said plurality of piezoelectric wafer corresponding to an electrode layer divided into a plurality of electrodes; and forming a plurality of said piezoelectric wafer bonded together to form a plurality of fracture piezoelectric wafer assembly, wherein same electrode bonding surface of the piezoelectric wafer bonded to each other polarity; at least one acoustic matching layer to the adhesive side of the piezoelectric wafer assembly and adhered to the other side of the piezoelectric wafer assembly followed by at least one backing layer; and the regional acoustic matching layer made of a portion of the at least one acoustic matching layer closest to the piezoelectric wafer assembly into a conductive region, said at least one layer or the backing layer of the most a portion of the backing layer region near said piezoelectric wafer assembly to create a single conductive region.
7.如权利要求6所述的方法,其特征在于,所述方法还包括: 将所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层的一部分区域制作成第一导电区域,并将所述第一导电区域与所述压电晶片组件中最靠近该声学匹配层的压电晶片的电极相耦合; 在所述第一导电区域的上表面设置与所述第一导电区域相连接的铜箔,通过所述铜箔将所述压电晶片组件的接地电极传导出来。 7. The method according to claim 6, characterized in that, said method further comprising: a partial region of the acoustic matching layer of the at least one acoustic matching layer closest to the piezoelectric wafer is prepared as a first component conductive region, the electrode of the piezoelectric wafer and the acoustic matching layer and the first conductive region closest to the piezoelectric wafer assembly is coupled; upper surface of the first conductive region provided with the first copper conductive regions are connected by a copper foil ground electrode of the piezoelectric wafer assembly out of conduction.
8.如权利要求6所述的方法,其特征在于,所述方法还包括: 将所述至少一层声学匹配层中最靠近所述压电晶片组件的声学匹配层的一部分区域制作成第二导电区域,并将所述第二导电区域制作成通孔结构; 在所述通孔结构中的孔壁圆柱面上镀一层导电金属,用以连通所述第二导电区域的上下表面,并将所述第二导电区域的上表面的电极与所述第二导电区域的下表面的电极通过所述通孔结构中的孔洞相连接; 在所述第二导电区域的上表面设置与所述第二导电区域相连接的铜箔,通过所述铜箔将所述压电晶片组件的接地电极传导出来。 8. The method according to claim 6, characterized in that, said method further comprising: a partial region of the acoustic matching layer of the at least one acoustic matching layer closest to the piezoelectric wafer is prepared as the second component conductive region and the second conductive region made into a through hole structure; cylindrical surface of the hole wall of the plated through hole structure a layer of conductive metal, for communicating the upper and lower surface of the second conductive region, and the electrode on the surface of the second conductive region and the lower surface of the second conductive region is connected through the via hole structure; disposed on the surface of the second conductive region a second conductive region is connected to the copper foil of the copper foil ground electrode through said piezoelectric wafer assembly out of conduction.
9.如权利要求6至8任一项所述的方法,其特征在于,所述方法还包括: 将所述至少一层背衬层中最靠近所述压电晶片组件的背衬层的一部分区域制作成第三导电区域,并将所述第三导电区域与所述压电晶片组件中最靠近该背衬层的压电晶片的电极相親合; 在所述第三导电区域的下表面设置与所述第三导电区域相连接的柔性电路板,通过所述柔性电路板将所述压电晶片组件的信号电极传导出来。 9. A method according to any one of claims 6-8, wherein said method further comprises: at least one portion of the backing layer closest to the piezoelectric wafer back assembly a third region made conductive region, and the third conductive region of the piezoelectric wafer assembly closest to the back electrode layer of the piezoelectric wafer bonded blind; lower surface of the third conductive region the flexible circuit board and the third conductive region is connected, through the flexible circuit board to the piezoelectric wafer component signal transduction out electrode.
10.如权利要求6至8任一项所述的方法,其特征在于,所述方法还包括: 将所述至少一层背衬层中最靠近所述压电晶片组件的背衬层的一部分区域制作成第四导电区域,并将所述第四导电区域制作成通孔结构; 在所述通孔结构中的孔壁圆柱面上镀一层导电金属,用以连通所述第二导电区域的上下表面,并将所述第四导电区域的上表面的电极与所述第四导电区域的下表面的电极通过所述通孔结构中的孔洞相连接; 在所述第四导电区域的下表面设置与所述第四导电区域相连接的柔性电路板,通过所述柔性电路板将所述压电晶片组件的信号电极传导出来。 10. The method according to any one of claims 6-8, wherein said method further comprises: at least one portion of the backing layer closest to the piezoelectric wafer back assembly a fourth area made conductive region, and the fourth conductive region made into a through hole structure; plated surface of the cylindrical hole wall of the through hole in the layer of electrically conductive metal structure for communication with the second conductive region the upper and lower surfaces, the upper surface of the electrode and the fourth conductive region and the lower surface of the electrode of the fourth conductive region is connected through the via hole structure; in the case of the fourth conductive region surface of the flexible circuit board is provided with said fourth conductive area is connected by a flexible circuit board assembly to said piezoelectric wafer out signal transduction electrode.
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