CN109980072A - LED component and packaging method, backlight module, liquid crystal display die set and terminal - Google Patents
LED component and packaging method, backlight module, liquid crystal display die set and terminal Download PDFInfo
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- CN109980072A CN109980072A CN201711450877.0A CN201711450877A CN109980072A CN 109980072 A CN109980072 A CN 109980072A CN 201711450877 A CN201711450877 A CN 201711450877A CN 109980072 A CN109980072 A CN 109980072A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 29
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 96
- 239000003292 glue Substances 0.000 claims abstract description 82
- 238000004020 luminiscence type Methods 0.000 claims abstract description 82
- 230000005540 biological transmission Effects 0.000 claims abstract description 63
- 239000012790 adhesive layer Substances 0.000 claims abstract description 52
- 238000005538 encapsulation Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 32
- 239000002313 adhesive film Substances 0.000 claims description 30
- 238000007789 sealing Methods 0.000 claims description 20
- 239000011265 semifinished product Substances 0.000 claims description 18
- 238000010792 warming Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 16
- 239000000565 sealant Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- 239000004568 cement Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 27
- 238000000151 deposition Methods 0.000 description 16
- 239000000047 product Substances 0.000 description 9
- 238000000197 pyrolysis Methods 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 5
- 230000003760 hair shine Effects 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 229920002635 polyurethane Polymers 0.000 description 5
- 239000004814 polyurethane Substances 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- -1 rare-earth ions Chemical class 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000012742 biochemical analysis Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- IBIRZFNPWYRWOG-UHFFFAOYSA-N phosphane;phosphoric acid Chemical compound P.OP(O)(O)=O IBIRZFNPWYRWOG-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of LED component and packaging methods, backlight module, liquid crystal display die set and terminal, the packaging method of the LED component deposits previously prepared obtained mixed fluorescent powder using physical vaporous deposition, then it fills encapsulation glue on mixed fluorescent powder surface and toasts and obtain fluorescent adhesive layer, light transmission glue-line is obtained based on fluorescent adhesive layer, obtained light transmission glue-line is inverted on substrate, luminescence chip is bonded on mixed fluorescent powder surface, it is cut after baking-curing luminescence chip and obtains single luminescence component, it is cut after bonding at least two luminescence components on pcb board, the luminous LED component of single side after being encapsulated；The LED component as made from this method is small in size, and thickness is low, the backlight more demanding to light and thin degree suitable for mobile phone etc., solve the problems, such as traditional support rack type LED component be difficult to reduce the size, produce obtained small size LED component production yield it is low.
Description
Technical field
The present invention relates to LED encapsulation technology fields, more specifically, be related to a kind of LED component and its packaging method and
Backlight module, liquid crystal display die set and terminal.
Background technique
Light emitting diode (LED) is a kind of solid-state semiconductor device, using solid semiconductor chip as luminescent material, when
Both ends add forward voltage, and the carrier generation in semiconductor is compound, release superfluous energy and cause photon transmitting generation can
It is light-exposed.In production, in addition to be welded to two electrodes of LED chip, to draw except positive and negative electrode, it is also necessary to right
LED chip and two electrodes are protected, i.e. progress LED encapsulation.
Currently, the LED packing forms of mainstream are the LED light source of belt supporting frame on the market, this packing forms packaged light source
Size is more much bigger than chip size itself, and phosphor process continues to use traditional dispensing, spraying etc., but this traditional encapsulation
Form has gradually been unable to satisfy user to LED product miniaturization, integrated, high brightness demand, especially with electricity such as mobile phones
Sub- product increasingly pursues narrow frame and lightening, the LED lamp bead as backlight also to accomplish it is smaller and thinner, according to tradition
The structure of stent-type backlight product designs, and supporting structure is reduced to the size that can then reduce LED chip, to reduce the bright of lamp bead
Degree, but for backlight product, lamp bead brightness is to continue to increase, the product for reducing brightness is bound to not connect by consumer
By, meanwhile, for the LED of rack-like structures due to being limited by packaging technology, the smaller difficulty of processing of size is higher, works as LED lamp bead
When thickness is less than or equal to 0.3mm, supporting structure is difficult to realize.
Therefore, it is limited when chip mount by die bond board height in conventional stent-type LED encapsulation structure and leads to nothing
Method places large size chip under the premise of supporting structure reduces, and be further unable to satisfy user is to the problem of high brightness demand
Urgently to be resolved.
Summary of the invention
Technical problem to be solved by the present invention lies in: existing conventional stent type LED component size is too big and is not suitable for
Light and thin type product, and it is unable to satisfy the problem of user is to high brightness demand, the present invention provide a kind of LED component and its encapsulation side
Backlight module, liquid crystal display die set and the terminal that method and the LED component made from the packaging method of the LED component are constituted.
In order to solve the above technical problems, the present invention provides a kind of single side luminous LED component, the device include pcb board and
Luminescence chip, the light transmission glue-line set gradually far from pcb board；Luminescence chip, light transmission glue-line form luminescence component, luminescence component side
Face is provided with side sealant layer；Light transmission glue-line is at least made of fluorescent adhesive layer；After fluorescent adhesive layer is deposited by mixed fluorescent powder, fill out
Encapsulation glue is filled to be made
Optionally, fluorescent adhesive layer is affixed on luminescence chip, and fluorescent adhesive layer includes at least the first fluorescent powder, the second fluorescent powder,
It is distributed in first fluorescent powder, the second fluorescent powder in the fluorescent adhesive layer of luminescence chip；The wavelength of transmitted light of first fluorescent powder
Range is 500-680nm, and the wavelength of transmitted light range of the second fluorescent powder is 500-680nm.
Further, the present invention also provides a kind of packaging methods of the luminous LED component of single side comprising following step
It is rapid:
Mixed fluorescent powder is made in S1, at least two different fluorescent powders of mixing；
S2, the first adhesive film is pasted in substrate surface, it is mixed using physical vaporous deposition deposition in the first glue film layer surface
Close fluorescent powder；
S3, encapsulation glue is filled on mixed fluorescent powder surface, so that encapsulation glue is filled in mixed fluorescent powder formation liquid glimmering
Optical cement, mixed fluorescent powder integrated distribution is in the liquid fluorescent glue close to the first adhesive film；
S4, baking liquid fluorescent glue form fluorescent adhesive layer, and light transmission glue-line is made based on fluorescent adhesive layer, glimmering in light transmission glue-line
Optical cement layer is located above the first adhesive film and contacts；
S5, the first adhesive film of removal, light transmission glue-line is separated with substrate；
S6, the second adhesive film is pasted in substrate surface, light transmission glue-line is inverted on the second adhesive film；
S7, an at least luminescence chip is bonded on the fluorescent adhesive layer surface of light transmission glue-line, and is toasted, make luminescence chip
Light-emitting surface be bonded and fixed on fluorescent adhesive layer；
Semi-finished product obtained by S8, the gap cutting step S7 along luminescence chip, obtain single luminescence component；
S9, at least two luminescence components are adhered on pcb board, and carry out curing process, make the luminescence chip of luminescence component
It is fixed on pcb board；
S10, the filling with sealant water around luminescence component, baking-curing sealing glue form side around luminescence component
Encapsulate glue-line；
S11, the sealing glue for removing luminescence component top surface, the gap of adjacent two luminescence components is cut along pcb board
It cuts, obtains the luminous LED component of single side.
Optionally, include: the step of light transmission glue-line obtained based on fluorescent adhesive layer in step S4
Light transmission glue-line directly is made using fluorescent adhesive layer as light transmission glue-line；
Or,
S41, top capsulation glue is coated on fluorescent adhesive layer surface, is toasted after application, keep top capsulation glue solid
Change and light transmission glue-line is made.
Optionally, the baking-curing top capsulation glue in step S41 obtains the process of top capsulation glue-line are as follows: first with
The fluorescent adhesive layer that the heating rate of 1-10 DEG C/min is coated with top capsulation glue rises to 50-80 DEG C by room temperature, keeps the temperature 1-3h,
Then it is warming up to 100-200 DEG C with the heating rate of 1-10 DEG C/min, keeps the temperature 1-9h.
Optionally, the process of liquid fluorescent glue-line is toasted in step S4 are as follows: first will with the heating rate of 1-10 DEG C/min
Liquid fluorescent glue-line rises to 40-60 DEG C by room temperature, 0.5-2h is kept the temperature, then with 1-
The heating rate of 10 DEG C/min is warming up to 65-90 DEG C, 0.5-4h is kept the temperature, finally with the heating rate of 1-10 DEG C/min
It is warming up to 120-200 DEG C, keeps the temperature 1-12h.
Optionally, fluorescent powder is silicate, aluminate, fluoride, phosphate, nitride or sulphide fluorescent material, is shone
The wavelength of transmitted light of chip is 230-480nm；The temperature that fixed luminescence chip is toasted in step S6 is 120-180 DEG C.
Further, the present invention also provides a kind of backlight module, which includes LED component encapsulation side as described above
The LED component that method is prepared.
Further, the present invention also provides a kind of liquid crystal display die set, which includes back as described above
Optical mode group.
Further, the present invention also provides a kind of terminals, which is characterized in that the terminal includes liquid crystal display as described above
Mould group.
The utility model has the advantages that
The luminous LED component of single side provided by the invention, the luminescence chip set gradually including pcb board and separate pcb board,
Light transmission glue-line composition, the luminescence component side that luminescence chip, light transmission glue-line are formed are provided with side sealant layer, wherein light transmission
Glue-line includes at least fluorescent adhesive layer, and a depositing operation is made after fluorescent adhesive layer is mixed by least two different fluorescent powders, by
There is lesser size in the device, therefore be applicable in and the backlight of light and thin type electronic product, while again due to the size of the device
It is smaller, so can be bright come the entirety for improving mobile phone backlight by increasing the method for LED component quantity on light and thin type electronic product
Degree.
The present invention also provides a kind of packaging method of LED component that single side as above is luminous, this method uses physics gas
Then the previously prepared obtained mixed fluorescent powder of phase deposition method is filled encapsulation glue in mixed fluorescent powder layer surface and is toasted
Fluorescent adhesive layer is obtained, light transmission glue-line is obtained based on fluorescent adhesive layer, obtained light transmission glue-line is inverted on substrate, is being located at light transmission
The mixed fluorescent powder surface of glue-line top surface bonds luminescence chip, is cut after baking-curing luminescence chip and obtains single hair
Optical assembly is cut after bonding at least two luminescence components on pcb board, and the luminous LED component of single side after being encapsulated is led to
It is small in size to cross LED component made from this method, thickness is low, the backlight more demanding to light and thin degree suitable for mobile phone etc., solves
Traditional support rack type LED component is difficult to reduce the size, and the production yield for producing small size LED component is relatively low asks
Topic, meanwhile, it can make to improve the fluorescence being made of fluorescent powder and encapsulation glue by way of preparatory mixed fluorescent powder obtained
The utilization rate of glue is further ensured that the brightness and color area concentration degree of LED component.
Further, the present invention also provides backlight module, liquid crystal display die set, terminal, the backlight modules, liquid crystal display
Mould group and terminal all include the LED component that the packaging method of LED component as described above is prepared；Due to such as packaging method
The LED component size being prepared is smaller, it is possible to meet user by way of increasing LED component to backlight module, liquid
The demand of brilliant display module, terminal high brightness, simultaneously as the LED component size is small, the backlight mould made of the LED component
During carrying out raising brightness by increasing LED component, there is no influenced by existing firmware for group, liquid crystal display die set
Caused by can not be the problem of placing large scale LED component.
Detailed description of the invention
In order to make the content of the present invention more clearly understood, it below according to specific embodiments of the present invention and combines
Attached drawing, the present invention is described in further detail, in which:
Fig. 1 is the structural schematic diagram of the luminous LED component of the single side of the embodiment of the present invention；
Fig. 2 is the schematic diagram of the section structure of the luminous LED component of the first single side of the embodiment of the present invention.
Fig. 3 is the schematic diagram of the section structure of the luminous LED component of second of single side of the embodiment of the present invention.
Fig. 4 is the structural schematic diagram of single luminescence component in the luminous LED component of the single side of the embodiment of the present invention；
Fig. 5 is the general view for illustrating the luminous LED component manufacturing method of the single side of the embodiment of the present invention.
Appended drawing reference indicates in figure are as follows: 1-PCB plate；2- luminescence chip；3- light transmission glue-line；The first fluorescent powder of 31-；32-
Two fluorescent powders；33- encapsulates glue-line；The side 4- encapsulates glue-line；5- top capsulation glue-line；A-A ' line in Fig. 1 structural schematic diagram
Section line obtains the schematic diagram of the section structure of Fig. 2, Fig. 3.
Specific embodiment
In order to make the content of the present invention more clearly understood, below according to specific embodiments of the present invention to this hair
It is bright to be described in further detail.
Embodiment 1
The present embodiment provides the LED components that a kind of single side shines, and as shown in Figs. 1-2, device includes pcb board 1 and along separate
Luminescence chip 2 that 1 direction of pcb board is sequentially arranged, light transmission glue-line 3, light transmission glue-line include the first fluorescent powder 31, the second fluorescent powder
32, glue-line 33 is encapsulated, luminescence chip 2, light transmission glue-line 3 form a luminescence component, and luminescence component side is provided with side sealing
Glue-line 4.
In practical applications, light transmission glue-line 3 further includes top capsulation glue-line 5, as shown in Figure 3.
Specifically, fluorescent adhesive layer is affixed on luminescence chip；Fluorescent adhesive layer includes at least the first fluorescent powder, the second fluorescent powder,
It is distributed in first fluorescent powder, the second fluorescent powder in the fluorescent adhesive layer of luminescence chip；The wavelength of transmitted light of first fluorescent powder
Range is 500-680nm, and the wavelength of transmitted light range of the second fluorescent powder is 500-680nm.
The present embodiment also provides a kind of LED component packaging method that single side is luminous comprising following steps:
Mixed fluorescent powder is made in S1, at least two different fluorescent powders of mixing.
S2, the first adhesive film is pasted in substrate surface, it is mixed using physical vaporous deposition deposition in the first glue film layer surface
Close fluorescent powder.
In practical applications, in step S2, the technological parameter of physical vaporous deposition are as follows: chamber pressure 100-1000Pa,
100-500 watts of power.
S3, encapsulation glue is filled on mixed fluorescent powder surface, so that encapsulation glue is filled in mixed fluorescent powder formation liquid glimmering
Optical cement, mixed fluorescent powder integrated distribution is in the liquid fluorescent glue close to the first adhesive film.
S4, baking liquid fluorescent glue form fluorescent adhesive layer, and light transmission glue-line is made based on fluorescent adhesive layer, glimmering in light transmission glue-line
Optical cement layer is located above the first adhesive film and contacts.
In some examples of the present embodiment, the step of light transmission glue-line is made based on fluorescent adhesive layer, includes:
Light transmission glue-line directly is made using fluorescent adhesive layer as light transmission glue-line；
Or,
S41, top capsulation glue is coated on fluorescent adhesive layer surface, is toasted after application, keep top capsulation glue solid
Change and light transmission glue-line is made.
In some examples of the present embodiment, the process of baking-curing top capsulation glue are as follows: first with 1-10 DEG C/min
Heating rate be coated with the fluorescent adhesive layer of top capsulation glue and rise to 50-80 DEG C by room temperature, 1-3h is kept the temperature, then with 1-10
DEG C/heating rate of min is warming up to 100-200 DEG C, keep the temperature 1-9h.
In some examples of the present embodiment, light transmission glue-line obtained with a thickness of 100-400 μm.
In the present embodiment, in step S4 toast liquid fluorescent glue formed fluorescent adhesive layer process are as follows: first with 1-10 DEG C/
Liquid fluorescent glue is risen to 40-60 DEG C by room temperature by the heating rate of min, 0.5-2h is kept the temperature, then with the heating of 1-10 DEG C/min
Rate is warming up to 65-90 DEG C, keeps the temperature 0.5-4h, is finally warming up to 120-200 DEG C with the heating rate of 1-10 DEG C/min, keeps the temperature 1-
12h。
S5, the first adhesive film of removal, light transmission glue-line is separated with substrate.
S6, the second adhesive film is pasted in substrate surface, light transmission glue-line is inverted on the second adhesive film.
S7, an at least luminescence chip is bonded on the fluorescent adhesive layer surface of light transmission glue-line, and is toasted, make luminescence chip
Light-emitting surface be bonded and fixed on fluorescent adhesive layer.
In some examples of the present embodiment, fluorescent powder include silicate, aluminate, fluoride, phosphate, nitride or
Sulphide fluorescent material, the wavelength of transmitted light of luminescence chip are 230-480nm；The temperature of the fixed luminescence chip of baking is in step S7
120-180℃。
Semi-finished product obtained by S8, the gap cutting step S7 along luminescence chip, obtain single luminescence component.
S9, at least two luminescence components are adhered on pcb board, and carry out curing process, make the luminescence chip of luminescence component
It is fixed on pcb board.
In some examples of the present embodiment, the curing process in step S9 includes: baking-curing, reflux solidification.
S10, the filling with sealant water around luminescence component, baking-curing sealing glue form side around luminescence component
Encapsulate glue-line.
S11, the sealing glue for removing luminescence component top surface, the gap of adjacent two luminescence components is cut along pcb board
It cuts, obtains the luminous LED component of single side.
Embodiment 2
The present embodiment provides the LED component packaging methods that a kind of single side shines comprising following steps:
S1, a substrate is provided, substrate is glass substrate, pastes pyrolysis adhesive film in substrate surface, heavy using physical vapor
Area method pyrolysis glue film layer surface be sequentially depositing mixing the first phosphor powder layer and the second phosphor powder layer mixed fluorescent powder layer, first
Phosphor powder layer raw material is the silicate fluorescent powder of commercially available doping with rare-earth ions, wavelength of transmitted light 580nm, the second fluorescent powder
The raw material of layer is sialon fluorescent powder, wavelength of transmitted light 500nm, in processes of physical vapor deposition, chamber pressure 100Pa,
Power is 100 watts.
S2, encapsulation glue is filled in the second phosphor surface, encapsulation glue is added to the second phosphor powder layer surface, makes it
Naturally deposition is flowed, is filled in the gap of fluorescent powder, encapsulation glue is the silicone resin that refractive index is not less than 1.5, when depositing
Between be 1h, then remove phosphor powder layer surface do not go deep into fluorescent powder first encapsulation glue, make its surfacing.
S3, the obtained semi-finished product of step S2 are placed in baking oven, the first heating rate with 1 DEG C/min is by semi-finished product by room temperature
40 DEG C are risen to, 0.5h is kept the temperature, is then warming up to 65 DEG C with the heating rate of 1 DEG C/min, 0.5h is kept the temperature, finally with 1 DEG C/min's
Heating rate is warming up to 120 DEG C, keeps the temperature 1h, obtains cured fluorescent adhesive layer.
After step S3, top capsulation glue is coated there are step S31, on fluorescent adhesive layer surface, top capsulation glue is
Refractive index is not less than 1.4 polyurethane packaging plastic, and the semi-finished product for being coated with polyurethane packaging plastic are placed in baking oven, first with 1 DEG C/
The semi-finished product that the heating rate of min is coated with top capsulation glue rise to 50 DEG C by room temperature, 1h are kept the temperature, then with 1 DEG C/min
Heating rate be warming up to 100 DEG C, keep the temperature 1h, obtain light transmission glue-line, light transmission glue-line with a thickness of 100mm, light transmission glue-line is not
For substratum transparent, and be one can be with the glue-line component of light transmission.
S4, heating removal pyrolysis adhesive film, light transmission glue-line is separated with substrate.
S5, pyrolysis adhesive film is pasted again in substrate surface, the inversion of light transmission glue-line is covered on adhesive film, makes the first fluorescence
Bisque is located at top layer (upper surface of light transmission glue-line).
S6, in the first phosphor powder layer surface coated with adhesive, and bond several luminescence chips on preset position, obtain
The luminescence component of full wafer, the luminescence chip of bonding are LED flip chip, wavelength of transmitted light 480nm, the semi-finished product that will be obtained
Being placed in baking oven and toasting at 120 DEG C solidifies binder, the blue light of luminescence chip transmitting by with the feux rouges of the first phosphor powder layer, the
The green light of two phosphor powder layers is compound, to form white light emission.
S7, full wafer luminescence component is cut along the gap of LED chip, is divided into single luminescence component, the knife of cutting
Piece is with a thickness of 0.05mm.
S8, single LED is adhered to pcb board with elargol electroconductive binder, then by binder baking-curing, then existed
Filling with sealant water around LED, sealing glue can be high viscosity silicone resin, and reflectivity is greater than or equal to 75%, will seal
Glue baking-curing.
Sealing glue at the top of S9, removal LED chip, retains the sealing glue of side, obtains side sealant layer, then
Two adjacent gaps LED are cut to get the LED component to shine to individual single side along pcb board.
Embodiment 3
The present embodiment provides the LED component packaging methods that a kind of single side shines comprising following steps:
S1, a substrate is provided, substrate is ceramic substrate, UV adhesive film is pasted in substrate surface, using physical vapour deposition (PVD)
Method obtains first according to the mixed fluorescent powder of the first fluorescent powder, the sequence mixing of the second fluorescent powder in UV glue film layer surface primary depositing
Phosphor powder layer, the second phosphor powder layer, the first phosphor powder layer raw material are the phosphate phosphor of commercially available doping with rare-earth ions, hair
The a length of 680nm of light wave is penetrated, the raw material of the second phosphor powder layer is the sulphide fluorescent material doped with rare earth ion, wavelength of transmitted light
For 580nm, in processes of physical vapor deposition, chamber pressure 1000Pa, power is 500 watts.
S2, encapsulation glue is filled on the second phosphor powder layer surface, encapsulation glue is added to the second phosphor powder layer surface, is made
It flows deposition naturally, is filled in the gap of fluorescent powder, and encapsulation glue is the epoxy resin that refractive index is not less than 1.5, sinks
The product time is for 24 hours, then to remove the encapsulation glue for not going deep into fluorescent powder in phosphor powder layer surface, make its surfacing.
S3, the obtained semi-finished product of step S3 are placed in baking oven, the first heating rate with 10 DEG C/min is by semi-finished product by room
Temperature rise keeps the temperature 2h to 60 DEG C, is then warming up to 90 DEG C with the heating rate of 10 DEG C/min, 4h is kept the temperature, finally with 10 DEG C/min's
Heating rate is warming up to 200 DEG C, keeps the temperature 12h, obtains cured fluorescent adhesive layer.
After step S3, top capsulation glue, top capsulation glue water are coated there are step S31, on fluorescent adhesive layer surface
For silicone encapsulation glue, the semi-finished product for being coated with silicone encapsulation glue are placed in baking oven, first will with the heating rate of 10 DEG C/min
Semi-finished product coated with top capsulation glue rise to 80 DEG C by room temperature, keep the temperature 3h, are then heated up with the heating rate of 10 DEG C/min
To 200 DEG C, keep the temperature 9h, obtain light transmission glue-line, light transmission glue-line with a thickness of 400 μm.
S4, removal UV adhesive film, light transmission glue-line is separated with substrate.
S5, pyrolysis adhesive film is pasted again in substrate surface, the inversion of light transmission glue-line is covered on adhesive film, makes the first fluorescence
Bisque is located at top layer (upper surface of light transmission glue-line).
S6, in the first phosphor powder layer surface coated with adhesive, and bond several luminescence chips on preset position, obtain
The luminescence component of full wafer, the luminescence chip of bonding are that the wavelength of transmitted light of LED flip chip LED flip chip is 230nm, will
To semi-finished product be placed in baking oven and toasted at 180 DEG C and solidify binder, the ultraviolet light and the first fluorescent powder of luminescence chip transmitting
Feux rouges, the green light of the second phosphor powder layer of layer are compound, to form white light emission.
S7, full wafer luminescence component is cut along the gap of LED chip, is divided into single luminescence component, the knife of cutting
Piece is with a thickness of 0.05mm.
S8, single LED is adhered to pcb board with tin cream, tin cream is solidified in reflow soldering, is then filled out around LED
Sealing glue is filled, sealing glue can be greater than or equal to 75% for its reflectivity of high viscosity silicone resin, and sealing glue baking is solid
Change.
Sealing glue at the top of S9, removal LED chip, retains the sealing glue of side, obtains side sealant layer, then
Two adjacent gaps LED are cut to get the LED component to shine to individual single side along pcb board.
Embodiment 4
The present embodiment provides the LED component packaging methods that a kind of single side shines comprising following steps:
S1, a substrate is provided, substrate is aluminium sheet, pyrolysis adhesive film is pasted in substrate surface, using physical vaporous deposition
It is sequentially depositing the first fluorescent powder and the second fluorescent powder of mixing in pyrolysis glue film layer surface, obtains the first phosphor powder layer, second glimmering
Light bisque, the first phosphor powder layer raw material are the silicate fluorescent powder of commercially available doping with rare-earth ions, and wavelength of transmitted light is
615nm, the raw material of the second phosphor powder layer are sialon fluorescent powder, wavelength of transmitted light 525nm, in processes of physical vapor deposition
In, chamber pressure 600Pa, power is 300 watts.
S2, encapsulation glue is filled in the second phosphor surface, encapsulation glue is added to the second phosphor powder layer surface, makes it
Naturally deposition is flowed, is filled in the gap of fluorescent powder, encapsulation glue is the polyurethane that refractive index is not less than 1.45, when depositing
Between be 10h, then remove phosphor powder layer surface and do not go deep into the encapsulation glue of fluorescent powder, make its surfacing.
S3, the obtained semi-finished product of step S3 are placed in baking oven, the first heating rate with 5 DEG C/min is by semi-finished product by room temperature
50 DEG C are risen to, 1h is kept the temperature, is then warming up to 85 DEG C with the heating rate of 6 DEG C/min, 3h is kept the temperature, finally with the heating of 4 DEG C/min
Rate is warming up to 160 DEG C, keeps the temperature 6h, obtains cured fluorescent adhesive layer.
After step S3, top capsulation glue, top capsulation glue water are coated there are step S31, on fluorescent adhesive layer surface
For polyurethane packaging plastic, the semi-finished product for being coated with polyurethane packaging plastic are placed in baking oven, will first be applied with the heating rate of 6 DEG C/min
The semi-finished product for being covered with the second encapsulation glue rise to 65 DEG C by room temperature, keep the temperature 1.5h, are then warming up to the heating rate of 7 DEG C/min
175 DEG C, 5h is kept the temperature, obtains top capsulation glue-line, top capsulation glue-line and fluorescent adhesive layer form light transmission glue-line, the thickness of light transmission glue-line
Degree is 270mm.
S4, heating removal pyrolysis adhesive film, light transmission glue-line is separated with substrate.
S5, pyrolysis adhesive film is pasted again in substrate surface, the inversion of light transmission glue-line is covered on adhesive film, makes the first fluorescence
Bisque is located at top layer (upper surface of light transmission glue-line).
S6, in the first phosphor powder layer surface coated with adhesive, and bond several luminescence chips on preset position, obtain
The luminescence component of full wafer, the luminescence chip of bonding are LED flip chip, and the wavelength of transmitted light of LED flip chip is 370nm, will
Obtained semi-finished product, which are placed in baking oven and toast at 160 DEG C, solidifies binder, the ultraviolet light and the first fluorescence of luminescence chip transmitting
The feux rouges of bisque, the green light of the second phosphor powder layer are compound, to form white light emission.
S7, full wafer luminescence component is cut along the gap of LED chip, is divided into single LED, the blade thickness of cutting is
1mm。
S8, single LED elargol or other electroconductive binders are adhered to pcb board, then by binder baking-curing, so
The filling with sealant water around LED afterwards, sealing glue can be greater than or equal to 75% for its reflectivity of high viscosity silicone resin, will be close
Sealing water baking-curing.
Sealing glue at the top of S9, removal LED chip, retains the sealing glue of side, obtains side sealant layer, then
Two adjacent gaps LED are cut to get the LED component to shine to individual single side along pcb board.
Embodiment 5
The present embodiment provides a kind of backlight module, liquid crystal display die set and terminal, the backlight modules, liquid crystal display die set
In include the LED component that is prepared of LED component packaging method as described above；The terminal includes liquid crystal display mode as described above
Group.
In the present embodiment, backlight module is made of LED component, and the LED component is by LED component packaging method as described above
It is made.The backlight module can be applied to display backlight field, can be the backlight module of the terminals such as TV, display, mobile phone,
When being applied to key-press backlight field, which can be used as the key that mobile phone, calculator, keyboard etc. have press key equipment
Back light.
In the present embodiment, liquid crystal display die set is made of backlight module, which includes by LED as described above again
LED component made from device packaging method.The liquid crystal display die set can be applied to: electric power observation and control terminal, injection molding machine computer, number
Control system, man-machine interface, Medical Instruments, biochemical analysis, textile machine control, tax control machine, lottery tickets machine, food inspection, chromatography point
The fields such as analysis, electronic surveying, environmental test device, security against fire, automotive electronics and data acquisition.
In the present embodiment, terminal is made of above-mentioned liquid crystal display die set, and liquid crystal display die set includes display module, should
Display module LED component made from LED component packaging method as described above is constituted；The terminal may include such as mobile phone, put down
It is plate computer, laptop, palm PC, personal digital assistant (Personal Digital Assistant, PDA), convenient
Formula media player (Portable Media Player, PMP), navigation device, wearable device, Intelligent bracelet, pedometer etc.
Mobile terminal with liquid crystal display, and number TV, desktop computer etc. have the fixed terminal of liquid crystal display.
It is to be appreciated that the LED component being prepared by the packaging method of LED component as described above, can be applied to
Various illumination fields are not limited only to backlight module, liquid crystal display die set and terminal, apply also for shooting field, household shines
Bright field, lighting for medical use field, furnishing fields, automotive field, field of traffic etc.:
When applied to shooting field, the flash lamp of camera can be fabricated to；
When applied to home lighting field, floor lamp, desk lamp, headlamp, ceiling lamp, downlight, projecting lamp can be fabricated to
Deng；
When applied to lighting for medical use field, operating lamp, low electromagnetism headlamp etc. can be fabricated to；
Various ornament lamps, such as various color lamps, landscape spotlight, advertising lamp can be fabricated to when applied to furnishing fields；
When applied to automotive field, automobile lamp, automobile indicator etc. can be fabricated to；
When applied to field of traffic, various traffic lights can be made, various street lamps can also be made.
Above-mentioned application is only several applications exemplified by the present embodiment, it should be appreciated that LED's in the present embodiment
Using several fields that it is not limited to the above example.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments, right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
Change, there is no necessity and possibility to exhaust all the enbodiments, and it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of LED component, which is characterized in that the device includes the luminous core that pcb board and the separate pcb board are set gradually
Piece, light transmission glue-line；The luminescence chip, light transmission glue-line form luminescence component, and the luminescence component side is provided with side sealing
Glue-line；The light transmission glue-line is at least made of fluorescent adhesive layer；After the fluorescent adhesive layer is deposited by mixed fluorescent powder, packaging plastic is filled
Water is made.
2. LED component as described in claim 1, which is characterized in that the fluorescent adhesive layer is affixed on the luminescence chip；It is described
Fluorescent adhesive layer includes at least the first fluorescent powder, the second fluorescent powder, and first fluorescent powder, the second fluorescent powder Relatively centralized are distributed in
In the fluorescent adhesive layer of the luminescence chip；The wavelength of transmitted light range of first fluorescent powder is 500-680nm, described the
The wavelength of transmitted light range of two fluorescent powders is 500-680nm.
3. a kind of LED component packaging method of LED component as described in claim 1, which comprises the steps of:
Mixed fluorescent powder is made in S1, at least two different fluorescent powders of mixing；
S2, the first adhesive film is pasted in substrate surface, it is described mixed using physical vaporous deposition deposition in the first glue film layer surface
Close fluorescent powder；
S3, encapsulation glue is filled on the mixed fluorescent powder surface, so that encapsulation glue is filled in mixed fluorescent powder formation liquid glimmering
Optical cement, the mixed fluorescent powder Relatively centralized are distributed in the liquid fluorescent glue of the first adhesive film；
S4, the baking liquid fluorescent glue form fluorescent adhesive layer, and light transmission glue-line, the light transmission glue is made based on the fluorescent adhesive layer
Fluorescent adhesive layer in layer is located above first adhesive film and contacts；
S5, removal first adhesive film, the light transmission glue-line is separated with substrate；
S6, the second adhesive film is pasted in substrate surface, the light transmission glue-line is inverted on the second adhesive film；
S7, an at least luminescence chip is bonded on the fluorescent adhesive layer surface of the light transmission glue-line, and is toasted, make described shine
The light-emitting surface of chip is bonded and fixed on the fluorescent adhesive layer；
Semi-finished product obtained by S8, the gap cutting step S7 along luminescence chip, obtain single luminescence component；
S9, at least two luminescence components are adhered on pcb board, and carry out curing process, make the luminescence chip of the luminescence component
It is fixed on pcb board；
S10, the filling with sealant water around the luminescence component, sealing glue is around the luminescence component described in baking-curing
It forms side and encapsulates glue-line；
S11, the sealing glue for removing the luminescence component top surface, the gap of adjacent two luminescence components is cut along pcb board
It cuts, obtains the luminous LED component of single side.
4. LED component packaging method as claimed in claim 3, which is characterized in that be based on the fluorescent glue in the step S4
Layer obtained light transmission glue-line the step of include:
By the fluorescent adhesive layer directly as the light transmission glue-line；
Or,
S41, top capsulation glue is coated on the fluorescent adhesive layer surface, and is toasted, make the top capsulation glue curing,
The light transmission glue-line is made.
5. LED component packaging method as claimed in claim 4, which is characterized in that the baking-curing top surface in the step S41
Encapsulate the process of glue are as follows: the fluorescent adhesive layer of top capsulation glue is coated with by normal with the heating rate of 1-10 DEG C/min first
Temperature rise keeps the temperature 1-3h to 50-80 DEG C, is then warming up to 100-200 DEG C with the heating rate of 1-10 DEG C/min, keeps the temperature 1-9h.
6. such as the described in any item LED component packaging methods of claim 3-5, which is characterized in that toast institute in the step S4
State liquid fluorescent glue formed fluorescent adhesive layer process are as follows: first with the heating rate of 1-10 DEG C/min by the liquid fluorescent glue by
Room temperature rises to 40-60 DEG C, keeps the temperature 0.5-2h, is then warming up to 65-90 DEG C with the heating rate of 1-10 DEG C/min, keeps the temperature 0.5-
4h is finally warming up to 120-200 DEG C with the heating rate of 1-10 DEG C/min, keeps the temperature 1-12h.
7. such as the described in any item LED component packaging methods of claim 3-5, which is characterized in that the fluorescent powder includes silicic acid
Salt, aluminate, fluoride, phosphate, nitride or sulphide fluorescent material, the wavelength of transmitted light of the luminescence chip are 230-
480nm；The temperature toasted in the step S7 is 120-180 DEG C.
8. a kind of backlight module, which is characterized in that the backlight module includes LED component encapsulation side as claimed in claim 3
LED component made from method.
9. a kind of liquid crystal display die set, which is characterized in that the liquid crystal display die set includes backlight mould as claimed in claim 8
Group.
10. a kind of terminal, which is characterized in that the terminal includes liquid crystal display die set as claimed in claim 9.
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Effective date of registration: 20190823 Address after: 516000 No. 6 Lujiao Road, Huinan High-tech Industrial Park, Huizhou City, Guangdong Province Applicant after: Huizhou flying photoelectric Co., Ltd. Address before: 518111, Shenzhen, Guangdong province Longgang District, Pinghu Street goose community Ling goose Industrial Zone No. 4 Applicant before: Shenzhen City Jufei Optoelectronic Co., Ltd. |
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