CN109979874A - SOI device structure - Google Patents
SOI device structure Download PDFInfo
- Publication number
- CN109979874A CN109979874A CN201711452955.0A CN201711452955A CN109979874A CN 109979874 A CN109979874 A CN 109979874A CN 201711452955 A CN201711452955 A CN 201711452955A CN 109979874 A CN109979874 A CN 109979874A
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- CN
- China
- Prior art keywords
- soi
- device structure
- field oxide
- poly
- heat dissipation
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses semiconductor SOI high-voltage device structure and its manufacturing methods, to improve its heat dissipation performance.The wherein SOI device structure of the good heat dispersion performance, including changing high pressure SOI device field oxide material therefor, utilize the thermal conductivity and difference in dielectric constant of different materials, under conditions of not changing device size and not changing to SOI three-decker part, SOI high tension apparatus heat dissipation performance can be effectively improved.
Description
Technical field
The present invention relates to semiconductor SOI high tension apparatus fields, and in particular to a kind of SOI device knot of good heat dispersion performance
Structure.
Background technique
SOI (Silicon-On-Insulator, the silicon in insulating substrate) technology is drawn between top layer silicon and backing bottom
One layer of buries oxide layer is entered.By forming semiconductive thin film on insulator, SOI material is provided with incomparable excellent of body silicon
Point: the medium isolation of component in integrated circuit may be implemented, completely eliminate the parasitic latch-up in Bulk CMOS circuit；
Also have that parasitic capacitance is small, integration density is high, speed is fast, simple process, short channel using integrated circuit made of this material
Effect is small and especially suitable for advantages such as low voltage and low power circuits, it can be said that SOI would be possible to as the low of deep-submicron
Pressure, the mainstream technology of low power consumption integrated circuit, into practical stage but due to the SiO of low-thermal conductivity2Insulating oxide buries
Self-heating effect caused by layer causes the channel current of device to decline the formation etc. with negative differential resistance, leads to SOI technology
Using being subject to certain restrictions.Thus, how to overcome self-heating effect, becomes the new issue of SOI material and device research.
Since soi structure is exactly to have more a buried layer oxide layer 11 on the basis of bulk silicon technological, so that being dissipated from substrate portions
Heat out greatly reduces, therefore most of paper and patent are all to inquire into how to change buried structure and material, with benefit
In heat dissipation, so that the improvement for field oxide 12 is had ignored, particularly with high tension apparatus, field oxide thickness and buried layer thickness
It is close, and the influence that the thickness after being superimposed with oxide layers such as separation layers 13 makes the former to heat dissipation can not be ignored.
This patent will change high pressure SOI device field oxide to improve heat dissipation performance.
Summary of the invention
The present invention provides a kind of SOI high-voltage device structure, effectively to inhibit self-heating effect, improves device heat dissipation performance.
The present invention provides SOI high-voltage device structures, including traditional three-decker, field oxide and separation layer.
Optionally, the SOI high voltage structures are SOI-LDMOS high-voltage device structure.
Optionally, the field oxide material therefor is POLY or other dielectric constants and pyroconductivity analog material
The embodiment of the invention provides SOI high-voltage device structure, which includes using POLY as material
Field oxide and traditional Si O2The some materials of field oxide are become the POLY to undope by the isolating oxide layer of material, due to
SiO2Pyroconductivity be much smaller than POLY, this change can make the thermal resistance of oxygen substantially reduce, be conducive to radiate.
Optionally, the separation layer material therefor is POLY or other dielectric constants and pyroconductivity analog material.
The embodiment of the invention provides SOI high-voltage device structure, which includes using POLY as material
Field oxide and insolated layer materials are become the POLY to undope, due to SiO by separation layer and field oxide2Pyroconductivity it is remote
Less than POLY, this change can make device upper layer thermal resistance substantially reduce, and be conducive to inhibit self-heating effect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of SOI-LDMOS device in the prior art；
Fig. 2 is SOI-LDMOS structural representation in first embodiment of the invention；
Fig. 3 is SOI-LDMOS structural representation in second embodiment of the invention.
Specific embodiment
Fig. 2 is SOI-LDMOS structural representation in first embodiment of the invention, which becomes the material of field oxide 21
The POLY material to undope, after field oxide is grown, a part is etched away, and deposit POLY22, then deposit isolation oxidation
Layer 23, finally deposits metal electrode.Due to SiO2Pyroconductivity be about the 1/100 of Si, but dielectric constant is 3 times of Si, institute
An oxygen part thermal resistance can be made to substantially reduce with this change, be conducive to radiate, and the heat of the thermal resistance of field oxide and buried layer
Resistance is equivalent to relationship in parallel, hence it is evident that lower field oxide thermal resistance will lead to most heats and scatter and disappear from field oxide, can
To achieve the purpose that effectively to radiate.
Fig. 3 is SOI-LDMOS structural representation in second embodiment of the invention, and the structure is by the material of field oxide and separation layer
Material all becomes the POLY material to undope.After growing field oxide 31, some is etched away, then deposits POLY material
32, then deposited metal, in addition to the field oxide etched away, entire isolating oxide layer is all replaced by POLY, since POLY is also same
Oxide layer is the same, belongs to nonconducting insulator, it is possible to make this replacement.Since the pyroconductivity of Si is much larger than SiO2Heat
Conductivity, and dielectric constant is not much different with Si, therefore, such structure not only can obviously inhibit self-heating effect, Er Qie
It is more simple and easy to do in technique realization,
Above-described embodiment illustrates above scheme by taking N-type LDMOS device as an example, in practice for p-type LDMOS device, for letter
Closet part, this specification repeat no more.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (4)
1. a kind of SOI device structure that can effectively improve heat dissipation performance, including traditional three-decker, field oxide and isolation from oxygen
Change layer, which is characterized in that under conditions of not changing device size and not changing to SOI three-decker part, can effectively change
Kind SOI high tension apparatus heat dissipation performance.
2. SOI high-voltage device structure as described in claim 1, which is characterized in that the field oxide material therefor is POLY
Or other dielectric constants and pyroconductivity analog material, with SiO used in traditional SOI device2It is different.
3. SOI high-voltage device structure as described in claim 1, which is characterized in that the isolating oxide layer material therefor is
POLY or other dielectric constants and pyroconductivity analog material, with SiO used in traditional SOI device2It is different.
4. SOI high-voltage device structure as claimed in claim 3, which is characterized in that the field oxide material therefor is POLY
Or other dielectric constants and pyroconductivity analog material, with SiO used in traditional SOI device2It is different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711452955.0A CN109979874A (en) | 2017-12-28 | 2017-12-28 | SOI device structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711452955.0A CN109979874A (en) | 2017-12-28 | 2017-12-28 | SOI device structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109979874A true CN109979874A (en) | 2019-07-05 |
Family
ID=67071973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711452955.0A Pending CN109979874A (en) | 2017-12-28 | 2017-12-28 | SOI device structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109979874A (en) |
-
2017
- 2017-12-28 CN CN201711452955.0A patent/CN109979874A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190705 |
|
| WD01 | Invention patent application deemed withdrawn after publication |