CN105097642A - Device structure capable of improving SOI heat-radiation characteristic - Google Patents
Device structure capable of improving SOI heat-radiation characteristic Download PDFInfo
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- CN105097642A CN105097642A CN201410216627.0A CN201410216627A CN105097642A CN 105097642 A CN105097642 A CN 105097642A CN 201410216627 A CN201410216627 A CN 201410216627A CN 105097642 A CN105097642 A CN 105097642A
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- soi
- device structure
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- field oxide
- heat
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Abstract
The invention discloses a semiconductor SOI high-voltage device structure and manufacturing method thereof, so heat-radiation performance of the SOI high-voltage device structure is improved. The SOI device structure having good heat-radiation performance comprises a material used for changing a high-voltage SOI device field oxidation layer. By utilizing differences of the thermal conductivities and dielectric constants of different materials, under the condition that the size of the device is not changed and a SOI three-layer structure is not partially changed, the heat-radiation performance of an SOI high-voltage device can be effectively improved.
Description
Technical field
The present invention relates to semiconductor SOI high tension apparatus field, be specifically related to a kind of SOI device structure of good heat dispersion performance.
Background technology
SOI(Silicon-On-Insulator, the silicon in dielectric substrate) technology be at the bottom of top layer silicon and backing between introduce one deck and bury oxide layer.By forming semiconductive thin film on insulator, SOI material is provided with the incomparable advantage of body silicon: the medium isolation that can realize components and parts in integrated circuit, completely eliminates the parasitic latch-up in Bulk CMOS circuit; The integrated circuit adopting this material to make also has that parasitic capacitance is little, integration density is high, speed is fast, technique is simple, short-channel effect is little and be specially adapted to the advantages such as low voltage and low power circuits, therefore can say that SOI is by likely becoming the low pressure of deep-submicron, the mainstream technology of low power consumption integrated circuit, enters practical stage. but due to the SiO of low-thermal conductivity
2the self-heating effect that insulating oxide buried regions causes causes the channel current decline of device and the formation etc. of negative differential resistance, causes the application of SOI technology to be subject to certain restrictions.Thus, how to overcome self-heating effect, become the new problem that SOI material and device are studied.
Because soi structure has more a buried regions oxide layer 11 exactly on bulk silicon technological basis, the heat shed from substrate portions is greatly reduced, therefore most paper and patent are all how to change buried structure and material in discussion, be beneficial to heat radiation, thus the improvement that have ignored for field oxide 12, especially for high tension apparatus, field oxide thickness is close with buried regions thickness, and the thickness after superposing with oxide layers such as separators 13 makes the former more can not be left in the basket on the impact of dispelling the heat.
This patent will change high pressure SOI device field oxide to improve heat dispersion.
Summary of the invention
The invention provides a kind of SOI high-voltage device structure, effectively to suppress self-heating effect, improve device heat dispersion.
The invention provides SOI high-voltage device structure, comprise traditional three-decker, field oxide and separator.
Optionally, described SOI high voltage structures is SOI-LDMOS high-voltage device structure.
Optionally, described field oxide material therefor is POLY or other dielectric constants and pyroconductivity analog material
Embodiments provide SOI high-voltage device structure, it is the field oxide of material that this SOI high-voltage device structure comprises with POLY, and traditional Si O
2the isolating oxide layer of material, becomes plain POLY, due to SiO by the portion of material of field oxide
2pyroconductivity much smaller than POLY, this change can make the thermal resistance of an oxygen greatly reduce, be conducive to heat radiation.
Optionally, described separator material therefor is POLY or other dielectric constants and pyroconductivity analog material.
Embodiments provide SOI high-voltage device structure, it is separator and the field oxide of material that this SOI high-voltage device structure comprises with POLY, and field oxide and insolated layer materials are become plain POLY, due to SiO
2pyroconductivity much smaller than POLY, this change can make device upper strata thermal resistance greatly reduce, be conducive to suppress self-heating effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of SOI-LDMOS device in prior art;
Fig. 2 is SOI-LDMOS structural representation in first embodiment of the invention;
Fig. 3 is SOI-LDMOS structural representation in second embodiment of the invention.
Embodiment
Fig. 2 is SOI-LDMOS structural representation in first embodiment of the invention, and the material of field oxide 21 is become plain POLY material by this structure, after field oxide grows, a part is etched away, and deposit POLY22, then deposit isolating oxide layer 23, last depositing metal electrode.Due to SiO
2pyroconductivity be about 1/100 of Si, but dielectric constant is 3 times of Si, so this change can make an oxygen part thermal resistance greatly reduce, be conducive to heat radiation, and the thermal resistance of field oxide and the thermal resistance of buried regions are equivalent to relation in parallel, obviously lower field oxide thermal resistance can cause most heat to scatter and disappear from field oxide, can reach the object of efficiently radiates heat.
Fig. 3 is SOI-LDMOS structural representation in second embodiment of the invention, and the material of field oxide and separator is all become plain POLY material by this structure.After growing field oxide 31, some is etched away, then deposit POLY material 32, deposited metal again, except the field oxide etched away, whole isolating oxide layer is all replaced by POLY, because POLY is also the same with oxide layer, belong to nonconducting insulator, replace so can be done this.Because the pyroconductivity of Si is much larger than SiO
2pyroconductivity, and dielectric constant and Si are more or less the same, and therefore, this kind of structure not only obviously can suppress self-heating effect, and more simple and easy to do on technique realizes,
Above-described embodiment illustrates such scheme for N-type LDMOS device, and in fact for P type LDMOS device, be easy device, the application's book repeats no more.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (4)
1. one kind effectively can be improved the SOI device structure of heat dispersion, comprise traditional three-decker, field oxide and isolating oxide layer, it is characterized in that, do not change device size and under the condition of changing not being done to SOI three-decker part, effectively can improve SOI high tension apparatus heat dispersion.
2. SOI high-voltage device structure as claimed in claim 1, is characterized in that, described field oxide material therefor is POLY or other dielectric constants and pyroconductivity analog material, the SiO used with traditional SOI device
2different.
3. SOI high-voltage device structure as claimed in claim 1, is characterized in that, described isolating oxide layer material therefor is POLY or other dielectric constants and pyroconductivity analog material, the SiO used with traditional SOI device
2different.
4. SOI high-voltage device structure as claimed in claim 3, is characterized in that, described field oxide material therefor is POLY or other dielectric constants and pyroconductivity analog material, the SiO used with traditional SOI device
2different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410216627.0A CN105097642A (en) | 2014-05-22 | 2014-05-22 | Device structure capable of improving SOI heat-radiation characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410216627.0A CN105097642A (en) | 2014-05-22 | 2014-05-22 | Device structure capable of improving SOI heat-radiation characteristic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105097642A true CN105097642A (en) | 2015-11-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410216627.0A Pending CN105097642A (en) | 2014-05-22 | 2014-05-22 | Device structure capable of improving SOI heat-radiation characteristic |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130172A (en) * | 2010-12-23 | 2011-07-20 | 上海北京大学微电子研究院 | SOI (silicon-on-insulator) device structure |
| JP2011171597A (en) * | 2010-02-19 | 2011-09-01 | Oki Semiconductor Co Ltd | Semiconductor device and method of manufacturing the same |
| CN103295951A (en) * | 2012-02-27 | 2013-09-11 | 中国科学院上海微系统与信息技术研究所 | Device system structure and preparing method based on mixed crystal orientation SOI |
-
2014
- 2014-05-22 CN CN201410216627.0A patent/CN105097642A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011171597A (en) * | 2010-02-19 | 2011-09-01 | Oki Semiconductor Co Ltd | Semiconductor device and method of manufacturing the same |
| CN102130172A (en) * | 2010-12-23 | 2011-07-20 | 上海北京大学微电子研究院 | SOI (silicon-on-insulator) device structure |
| CN103295951A (en) * | 2012-02-27 | 2013-09-11 | 中国科学院上海微系统与信息技术研究所 | Device system structure and preparing method based on mixed crystal orientation SOI |
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Application publication date: 20151125 |