CN109979800A - The preparation method of polyimide layer - Google Patents
The preparation method of polyimide layer Download PDFInfo
- Publication number
- CN109979800A CN109979800A CN201711445730.2A CN201711445730A CN109979800A CN 109979800 A CN109979800 A CN 109979800A CN 201711445730 A CN201711445730 A CN 201711445730A CN 109979800 A CN109979800 A CN 109979800A
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- Prior art keywords
- layer
- metal
- polyimide layer
- preparation
- polyimide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Abstract
The present invention relates to a kind of preparation methods of polyimide layer, comprising: removes the charge of layer on surface of metal；Polyimide layer is formed in layer on surface of metal, photosensitive material is coated in the polyimides layer surface and carries out exposure-processed；Developed using developer solution to the photosensitive material and the polyimide layer, forms required polyimides layer pattern.The present invention removes the charge of layer on surface of metal before forming polyimide layer, changes the current potential of layer on surface of metal, to efficiently solve in development step when preparing polyimide layer developer solution to the erosion problem of layer on surface of metal.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of preparation method of polyimide layer.
Background technique
Polyimides (Polyimide) material is due to its good high-temperature stability, mechanical performance, electric property and change
Learn stability, be often applied in passivation layer (passivation) technique of semiconductor devices, with reduce various natural environments and
Working environment is damaged caused by semiconductor devices, improves the reliability and stability of device.
The photoetching production line of part of devices is using positive photoresist+alkaline development mode, in order to be compatible with the light in traditional technology
Production line is carved, polyimides preparation is realized also by positive photoresist+alkaline development mode.
But inventor has found alkaline-based developer to the top-level metallic (Top below polyimides during actual job
Metal erosion) influences apparent and subsequent wire bonding (wire bonding) process of top-level metallic than more serious.
To solve this problem, the technique that dimethylbenzene can be used by using negtive photoresist, developer solution, such developer solution will not be right
Top-level metallic causes to corrode.But this scheme needs additional increase negtive photoresist technique and the relevant board of mating negtive photoresist technique.
Summary of the invention
Based on this, it is necessary to provide a kind of positive adhesive process of compatibility and can solve in polyimide layer preparation process to lower section
The preparation method of the polyimide layer of the erosion problem of metal.
A kind of preparation method of polyimide layer, comprising: remove the charge of layer on surface of metal；It is formed in layer on surface of metal poly-
Imide layer coats photosensitive material in the polyimides layer surface and carries out exposure-processed；Using developer solution to the light
Quick property substance and the polyimide layer develop, and form required polyimides layer pattern.
It is described in one of the embodiments, to coat photosensitive material in the polyimides layer surface and be exposed place
What is coated in the step of reason is positive photoresist, described to be shown using developer solution to the photoresist and the polyimide layer
The step of shadow, is developed using the developer for positive photoresist of alkalinity.
It further include to institute in one of the embodiments, after the step of polyimides layer pattern needed for the formation
Polyimide layer is stated to carry out curing process, form the step of passivation layer.
The material of the metal layer is aluminum or aluminum alloy in one of the embodiments,.
The step of charge of the removal layer on surface of metal is using being passed through carbon dioxide in one of the embodiments,
Deionized water rinse the layer on surface of metal.
The step of charge for removing layer on surface of metal is by rotating device surface of revolution in one of the embodiments,
It is formed with the wafer of metal layer, while carrying out high pressure water cleaning.
The step of charge of the removal layer on surface of metal is to be formed with metal layer to surface in one of the embodiments,
Wafer heat and be passed through hydrogen.
Nitrogen is also passed through while the heating in one of the embodiments, to protect wafer.
The temperature of the heating is 300~500 degrees Celsius in one of the embodiments,.
The step of charge of the removal layer on surface of metal is using ultraviolet light to the gold in one of the embodiments,
Belong to layer surface to be irradiated.
The preparation method of above-mentioned polyimide layer removes the charge of layer on surface of metal before forming polyimide layer, changes
The current potential of layer on surface of metal is become, to efficiently solve in development step when preparing polyimide layer developer solution to metal layer
The erosion problem on surface.
Detailed description of the invention
Fig. 1 is the flow chart of the preparation method of polyimide layer in an embodiment.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give preferred embodiment of the invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is make it is more thorough and comprehensive to the disclosure.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
Semiconductor field vocabulary used in this specification is the common technical words of those skilled in the art, such as
P+ type is easily represented the p-type of heavy dopant concentration, doping concentration in p-type representative to distinguish doping concentration by p-type and N-type impurity
P-type, P-type, which represents, is lightly doped the p-type of concentration, and N+ type represents the N-type of heavy dopant concentration, N-type represent in doping concentration N-type,
N-type represents the N-type that concentration is lightly doped.
Fig. 1 is the flow chart of the preparation method of polyimide layer in an embodiment, including the following steps:
S110 removes the charge of layer on surface of metal.
Inventor is the study found that the current potential of layer on surface of metal will affect the journey that metal is etched in different pH value
Degree.In the fabrication process, surface can take charge to the metal layer of semiconductor components and devices, can be with after which is removed or neutralized
Developer solution is efficiently solved to the erosion problem of layer on surface of metal.
In the present embodiment, metal layer is top-level metallic (Top Metal), and polyimide layer is as passivation layer.At other
In embodiment, polyimide layer is formed if necessary to the layer on surface of metal in other levels, and it is poly- developer solution eating thrown occur
After imide layer is caused to layer on surface of metal the problem of corroding, the system that method of the invention carries out polyimide layer also can be used
It is standby.
S120 forms polyimide layer in layer on surface of metal, coats photosensitive material in polyimides layer surface and carry out
Exposure-processed.
It in the present embodiment, is to form polyimide layer in layer on surface of metal by way of spin coating.Photosensitive material can
Be to wavelength be 436 nanometers of G-Line, 365 nanometers of I-Line, 248 nanometers of KrF or 193 nanometer of ArF it is any one
Kind light has the positivity of light sensitivity or the photoresist of negativity, the photosensitive polyimide of positivity or negativity.
S130 develops to photosensitive material and polyimide layer using developer solution, forms required polyimide layer
Pattern.
After exposure after the developed liquid removal of the photosensitive material of corresponding pattern, developer solution will continue to corrode polyimides downwards
Layer, until being formed and the approximate pattern of photosensitive material.
The preparation method of above-mentioned polyimide layer removes the charge of layer on surface of metal before forming polyimide layer, changes
The current potential of layer on surface of metal is become, to efficiently solve in development step when preparing polyimide layer developer solution to metal layer
The erosion problem on surface.
In one embodiment, the material of metal layer is aluminium；In another embodiment, the material of metal layer is that aluminium closes
Gold.
In one embodiment, step S120 coating is positive photoresist, step S130 be using developer for positive photoresist into
Row development.Developer for positive photoresist is generally alkaline-based developer, such as tetramethylammonium hydroxide (Tetramethylammonium
Hydroxide,TMAH)。
In one embodiment, step S110 is to rinse layer on surface of metal using the deionized water for being passed through carbon dioxide.
It specifically, can be by wafer as high speed rotation on turntable, then using the high pressure water cleaning for being passed through carbon dioxide.
In one embodiment, step S110 is to be irradiated using ultraviolet (UV) light to layer on surface of metal, to remove gold
Belong to the charge of layer surface.
In one embodiment, step S110 is to be formed with the wafer of metal layer to surface to heat and be passed through hydrogen, hydrogen
It can play the role of removing the charge of layer on surface of metal.The alloy (Alloy) of rear end when device manufacture can be used in the technique
Equipment (such as boiler tube) Lai Jinhang of technique, effect of the hydrogen in alloying technology are to make H penetrate dielectric layer to reach the surface Si, simultaneously
In conjunction with the dangling bonds on the surface Si.If can be compatible with producing line, will directly can also merge the step of alloy with the step, with
Improve production efficiency.In one embodiment, nitrogen is also passed through while heating to protect wafer.In one embodiment
In, the temperature of heating is 300~500 degrees Celsius, preferably 400 degrees Celsius.
In one embodiment, polyimides be non-photosensitive polyimides, i.e., to common lithographic wavelength (G-line:
436 nanometers, I-line:365 nanometers, KrF:248 nanometers, ArF:193 nanometers etc.) do not have the polyimides of light sensitivity.
It in one embodiment, further include the step for being solidified, being formed passivation layer to polyimide layer after step S130
Suddenly.It specifically can be and be heating and curing, in one embodiment, heat curing temperature is 200~500 degrees Celsius, and the time is 30~120
Minute.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of preparation method of polyimide layer, comprising:
Remove the charge of layer on surface of metal；
Polyimide layer is formed in layer on surface of metal, photosensitive material is coated in the polyimides layer surface and is exposed place
Reason；
Developed using developer solution to the photosensitive material and the polyimide layer, forms required polyimide layer figure
Case.
2. the preparation method of polyimide layer according to claim 1, which is characterized in that described in the polyimide layer
What is coated in the step of surface coats photosensitive material and carries out exposure-processed is positive photoresist, described to use developer solution to institute
It states photoresist and the step of polyimide layer is developed is developed using the developer for positive photoresist of alkalinity.
3. the preparation method of polyimide layer according to claim 1, which is characterized in that polyamides needed for the formation is sub-
After the step of amine layer pattern, further includes the steps that carrying out the polyimide layer curing process, forms passivation layer.
4. the preparation method of polyimide layer according to claim 1, which is characterized in that the material of the metal layer is aluminium
Or aluminium alloy.
5. the preparation method of polyimide layer according to claim 1, which is characterized in that the removal layer on surface of metal
The step of charge is to rinse the layer on surface of metal using the deionized water for being passed through carbon dioxide.
6. the preparation method of polyimide layer according to claim 5, which is characterized in that the removal layer on surface of metal
The step of charge is the wafer that metal layer is formed with by rotating device surface of revolution, while carrying out high pressure water cleaning.
7. the preparation method of polyimide layer according to claim 1, which is characterized in that the removal layer on surface of metal
The step of charge is to be formed with the wafer of metal layer to surface to heat and be passed through hydrogen.
8. the preparation method of polyimide layer according to claim 7, which is characterized in that be also passed through while the heating
Nitrogen protects wafer.
9. the preparation method of polyimide layer according to claim 7 or 8, which is characterized in that the temperature of the heating is
300~500 degrees Celsius.
10. the preparation method of polyimide layer according to claim 1, which is characterized in that the removal layer on surface of metal
Charge the step of be to be irradiated using ultraviolet light to the layer on surface of metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711445730.2A CN109979800B (en) | 2017-12-27 | 2017-12-27 | Method for producing polyimide layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711445730.2A CN109979800B (en) | 2017-12-27 | 2017-12-27 | Method for producing polyimide layer |
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| Publication Number | Publication Date |
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| CN109979800A true CN109979800A (en) | 2019-07-05 |
| CN109979800B CN109979800B (en) | 2021-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711445730.2A Active CN109979800B (en) | 2017-12-27 | 2017-12-27 | Method for producing polyimide layer |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941279A (en) * | 2005-05-27 | 2007-04-04 | 台湾积体电路制造股份有限公司 | H20 plasma and h20 vapor methods for releasing charges and use thereof |
| CN103871869A (en) * | 2012-12-18 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | Non-photosensitive polyimide passivation layer manufacturing method |
-
2017
- 2017-12-27 CN CN201711445730.2A patent/CN109979800B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941279A (en) * | 2005-05-27 | 2007-04-04 | 台湾积体电路制造股份有限公司 | H20 plasma and h20 vapor methods for releasing charges and use thereof |
| CN103871869A (en) * | 2012-12-18 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | Non-photosensitive polyimide passivation layer manufacturing method |
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| CN109979800B (en) | 2021-07-02 |
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