CN109964319B - 带有浮置场环终端的功率半导体器件 - Google Patents
带有浮置场环终端的功率半导体器件 Download PDFInfo
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- CN109964319B CN109964319B CN201780072958.3A CN201780072958A CN109964319B CN 109964319 B CN109964319 B CN 109964319B CN 201780072958 A CN201780072958 A CN 201780072958A CN 109964319 B CN109964319 B CN 109964319B
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- floating field
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000000926 separation method Methods 0.000 abstract description 33
- 235000012431 wafers Nutrition 0.000 description 29
- 230000000052 comparative effect Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16200438 | 2016-11-24 | ||
EP16200438.6 | 2016-11-24 | ||
PCT/EP2017/079812 WO2018095870A1 (en) | 2016-11-24 | 2017-11-20 | Power semiconductor device with floating field ring termination |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109964319A CN109964319A (zh) | 2019-07-02 |
CN109964319B true CN109964319B (zh) | 2022-06-07 |
Family
ID=57394456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780072958.3A Active CN109964319B (zh) | 2016-11-24 | 2017-11-20 | 带有浮置场环终端的功率半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10566463B2 (zh) |
EP (1) | EP3545557B1 (zh) |
JP (1) | JP6816278B2 (zh) |
CN (1) | CN109964319B (zh) |
WO (1) | WO2018095870A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112993009B (zh) * | 2019-12-17 | 2023-04-18 | 株洲中车时代半导体有限公司 | 一种功率器件结终端结构、制造方法及功率器件 |
CN112967931A (zh) * | 2021-02-26 | 2021-06-15 | 西安微电子技术研究所 | 一种碳化硅肖特基二极管的终端结构及其设计方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804868A (en) * | 1992-09-17 | 1998-09-08 | Hitachi, Ltd. | Semiconductor device having planar junction |
CN102005475A (zh) * | 2010-10-15 | 2011-04-06 | 无锡新洁能功率半导体有限公司 | 具有改进型终端的igbt及其制造方法 |
CN102163626A (zh) * | 2009-12-22 | 2011-08-24 | Abb技术有限公司 | 具有新的保护环终端设计的功率半导体器件及其生产方法 |
CN103477437A (zh) * | 2011-02-23 | 2013-12-25 | Abb技术有限公司 | 功率半导体装置 |
CN103746002A (zh) * | 2013-12-17 | 2014-04-23 | 西安理工大学 | 一种台阶形沟槽-场限环复合终端结构 |
CN105932046A (zh) * | 2016-06-01 | 2016-09-07 | 清华大学 | 面向碳化硅高压大功率器件的边缘结终端结构 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5075739A (en) | 1990-01-02 | 1991-12-24 | Motorola, Inc. | High voltage planar edge termination using a punch-through retarding implant and floating field plates |
JP2006073740A (ja) * | 2004-09-01 | 2006-03-16 | Toshiba Corp | 半導体装置及びその製造方法 |
US9147763B2 (en) * | 2013-09-23 | 2015-09-29 | Infineon Technologies Austria Ag | Charge-compensation semiconductor device |
TWI497665B (zh) * | 2013-10-16 | 2015-08-21 | A silicon carbide power element with a terminal structure | |
WO2015090971A1 (en) * | 2013-12-16 | 2015-06-25 | Abb Technology Ag | Edge termination for semiconductor devices and corresponding fabrication method |
-
2017
- 2017-11-20 WO PCT/EP2017/079812 patent/WO2018095870A1/en unknown
- 2017-11-20 EP EP17797970.5A patent/EP3545557B1/en active Active
- 2017-11-20 JP JP2019527880A patent/JP6816278B2/ja active Active
- 2017-11-20 CN CN201780072958.3A patent/CN109964319B/zh active Active
-
2019
- 2019-05-23 US US16/420,803 patent/US10566463B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804868A (en) * | 1992-09-17 | 1998-09-08 | Hitachi, Ltd. | Semiconductor device having planar junction |
CN102163626A (zh) * | 2009-12-22 | 2011-08-24 | Abb技术有限公司 | 具有新的保护环终端设计的功率半导体器件及其生产方法 |
CN102005475A (zh) * | 2010-10-15 | 2011-04-06 | 无锡新洁能功率半导体有限公司 | 具有改进型终端的igbt及其制造方法 |
CN103477437A (zh) * | 2011-02-23 | 2013-12-25 | Abb技术有限公司 | 功率半导体装置 |
CN103746002A (zh) * | 2013-12-17 | 2014-04-23 | 西安理工大学 | 一种台阶形沟槽-场限环复合终端结构 |
CN105932046A (zh) * | 2016-06-01 | 2016-09-07 | 清华大学 | 面向碳化硅高压大功率器件的边缘结终端结构 |
Also Published As
Publication number | Publication date |
---|---|
US20190288124A1 (en) | 2019-09-19 |
WO2018095870A1 (en) | 2018-05-31 |
JP6816278B2 (ja) | 2021-01-20 |
CN109964319A (zh) | 2019-07-02 |
US10566463B2 (en) | 2020-02-18 |
EP3545557A1 (en) | 2019-10-02 |
JP2020500429A (ja) | 2020-01-09 |
EP3545557B1 (en) | 2020-12-30 |
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Effective date of registration: 20200511 Address after: Baden, Switzerland Applicant after: ABB grid Switzerland AG Address before: Baden, Switzerland Applicant before: ABB Switzerland Co.,Ltd. |
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Address after: Swiss Baden Applicant after: Hitachi energy Switzerland AG Address before: Swiss Baden Applicant before: ABB grid Switzerland AG |
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Effective date of registration: 20240108 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |