CN109962398A - A kind of fixed device of crystal for micro-slice laser - Google Patents
A kind of fixed device of crystal for micro-slice laser Download PDFInfo
- Publication number
- CN109962398A CN109962398A CN201711403550.8A CN201711403550A CN109962398A CN 109962398 A CN109962398 A CN 109962398A CN 201711403550 A CN201711403550 A CN 201711403550A CN 109962398 A CN109962398 A CN 109962398A
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- China
- Prior art keywords
- crystal
- heat
- conducting plate
- micro
- connecting hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000013078 crystal Substances 0.000 title claims abstract description 91
- 239000003292 glue Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000005219 brazing Methods 0.000 claims 1
- 238000004021 metal welding Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000013079 quasicrystal Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
Abstract
The invention discloses a kind of fixed devices of crystal for micro-slice laser, it include sequentially connected first heat-conducting plate, second heat-conducting plate and third heat-conducting plate, first heat-conducting plate, second heat-conducting plate, third heat-conducting plate is respectively equipped with the first light hole being arranged concentrically, crystal connecting hole, second light hole, crystal is equipped in the crystal connecting hole, crystal connecting hole aperture is all larger than the first light hole aperture and the second light hole aperture, first light hole aperture and the second light hole aperture are respectively less than crystal circumscribed circle diameter, make sufficiently to thermally contact between crystal and heat-conducting plate, and reduce the difference of the thermal expansion coefficient between thermally conductive plate material and crystal, constraint crystal is displaced it not, improve the durability of microchip solid state laser and the quality of laser light source.
Description
[technical field]
The present invention relates to a kind of fixed devices of crystal for micro-slice laser.
[background technique]
Microchip solid state laser is a kind of small-sized, high quality laser light source, can continuous or pulse operation, structure
It is compact, easy to use, it has a good application prospect, wherein the core element for generating laser is Nd:YAG crystal or Nd:YVO4
Crystal, shape can be rectangular or rectangle, be also possible to circle, and size range is general are as follows: thickness is less than 2mm, diameter
Or side length is generally within 10mm, when with sufficiently strong 808nm laser irradiation to Nd:YAG or Nd:YVO4When on crystal, crystal
The laser that wavelength is 1064nm can be issued.
But above-mentioned crystal temperature under 808nm laser irradiation can increase, in order to maintain preferable performance, it is necessary to dissipate to it
Heat fixes the mode of crystal and heat dissipation as shown in Figure 1-3, crystal 12 is placed on one in Fig. 1 in existing micro-slice laser
In metal sleeve 11, crystal tabletting 13 is locked by screwing briquetting 14 again after pressing against crystal 12；Crystal 12 is placed in Fig. 2 and Fig. 3
It is locked in metal sleeve 11, then directly by crystal briquetting 15, realizes the fixation and heat dissipation of crystal, but above-mentioned fixation and heat dissipation
Mode has the following disadvantages: that 1, crystal is not enough with intermetallic thermally contact；2, due in the case where pump light irradiates, crystal temperature effect
It can increase, and metal sleeve differs larger with the thermal expansion rate of crystal, after a number of uses, contact meeting of the crystal with metal sleeve
It gradually fluffs, so as to cause the reduction of heat-transfer effect and the minute movement of position, due to conducting heat, bad and crystal displacement is affected
The output-index of laser；3, also more difficult in batch production process to accomplish consistency, it is difficult to carry out quality control.
[summary of the invention]
The invention overcomes the shortcomings of the above-mentioned technology and provides a kind of crystal for micro-slice laser to fix device,
Make sufficiently to thermally contact between crystal and heat-conducting plate, and reduce the difference of the thermal expansion coefficient between thermally conductive plate material and crystal, about
Shu Jingti is displaced it not, improves the durability of microchip solid state laser and the quality of laser light source.
To achieve the above object, present invention employs following technical proposals:
A kind of fixed device of crystal for micro-slice laser includes sequentially connected first heat-conducting plate, second leads
Hot plate and third heat-conducting plate, it is logical that first heat-conducting plate, the second heat-conducting plate, third heat-conducting plate are respectively equipped with first be arranged concentrically
Unthreaded hole, crystal connecting hole, the second light hole, the crystal connecting hole is interior to be equipped with crystal, and crystal connecting hole aperture is all larger than
First light hole aperture and the second light hole aperture, first light hole aperture and the second light hole aperture are respectively less than outside crystal
Connect circular diameter.
First heat-conducting plate, the second heat-conducting plate, third heat-conducting plate are one of thermal conductive ceramic, tungsten copper piece, sapphire
Or it is a variety of.
First heat-conducting plate and the thermally conductive plate thickness of third are all larger than 0.1mm.
First heat-conducting plate, the second heat-conducting plate and third heat-conducting plate geomery are all the same.
The big 10um or more of the crystal connecting hole aperture ratio crystal circumscribed circle diameter.
The crystal connecting hole is circular hole or square hole, and the crystal shape is identical cylindric to connect hole shape with crystal
Or flat column.
The crystal is welded in crystal connecting hole by thermally conductive glue or low-temperature metal solder.
Between first heat-conducting plate and the second heat-conducting plate, the second heat-conducting plate and third heat-conducting plate by thermally conductive glue or
The welding of low-temperature metal solder.
The beneficial effects of the present invention are:
The present invention guarantees the compactness and uniformity that laser crystal is contacted with heat-conducting plate, guarantees product quality and keeps laser
Crystal light pass surface is parallel with thermally conductive plate surface, to guarantee the assembly precision of subsequent handling, the thermal expansion coefficient of thermally conductive plate material
It is close with crystal, it is displaced it not to constrain crystal, convenient for batch production control.
[Detailed description of the invention]
Fig. 1 is the cross-sectional view that the prior art applies one；
Fig. 2 is the cross-sectional view that the prior art applies two；
Fig. 3 is the cross-sectional view that the prior art applies three；
Fig. 4 is one exploded view of the embodiment of the present invention；
Fig. 5 is one cross-sectional view of the embodiment of the present invention；
Fig. 6 is two exploded view of the embodiment of the present invention.
[specific embodiment]
It is described in further detail with reference to the accompanying drawing with embodiments of the present invention:
As Figure 4-Figure 6, the fixed device of a kind of crystal for micro-slice laser includes sequentially connected first to lead
Hot plate 1, the second heat-conducting plate 2 and third heat-conducting plate 3, first heat-conducting plate 1, the second heat-conducting plate 2, third heat-conducting plate 3 are set respectively
There are the first light hole 4, crystal connecting hole 5, the second light hole 6 being arranged concentrically, is equipped with crystal 7, institute in the crystal connecting hole 5
State 5 aperture of crystal connecting hole and be all larger than 6 aperture of 4 aperture of the first light hole and the second light hole, 4 aperture of the first light hole and
Second light hole, 6 aperture is respectively less than 7 circumscribed circle diameter of crystal, and pump light sequentially passes through the first light hole 4, crystal 7, the second light passing
Hole 6, when pump light is irradiated on crystal 7,7 temperature of crystal rises, and heat passes to the second heat-conducting plate 2, the first heat-conducting plate 1 and third
Heat dissipation is realized on heat-conducting plate 3.
Wherein, first heat-conducting plate 1, the second heat-conducting plate 2, third heat-conducting plate 3 can be thermal conductive ceramic, tungsten copper piece, Lan Bao
Same material in stone can also be the various material in thermal conductive ceramic, tungsten copper piece, sapphire, dissipating for crystal 7 is better achieved
Heat.
First heat-conducting plate 1, the second heat-conducting plate 2 and 3 geomery of third heat-conducting plate are all the same, convenient for the first light hole 4, crystalline substance
Being arranged concentrically between body connecting hole 5, the second light hole 6, and first heat-conducting plate 1 is all larger than with 3 thickness of third heat-conducting plate
0.1mm guarantees mechanical performance and improves thermal diffusivity, and 5 aperture ratio crystal of crystal connecting hole, the 7 big 10um of diameter, being convenient for will be brilliant
Body 7 is placed in crystal connecting hole 5.
First heat-conducting plate 1, the second heat-conducting plate 2, third heat-conducting plate thermal conductivity be above 20W/m/k, thermal expansion rate
Respectively less than 10*10-6/K.
As shown in Figure 4 and Figure 6, the crystal connecting hole 5 is circular hole or square hole, and 7 shape of crystal is to connect with crystal
5 shape of hole is identical cylindric or flat column.
The crystal 7 is welded in crystal connecting hole 5 by thermally conductive glue or solder, first heat-conducting plate 1
It is welded between the second heat-conducting plate 2, the second heat-conducting plate 2 and third heat-conducting plate by thermally conductive glue or solder.
Assembling process: crystal 7 is first passed through into heat-conducting glue or low-temperature metal solder weldbonding on the first heat-conducting plate 1, wherein leading
Hot glue and solder have to coating uniformly, and use certain pressure compaction, and observe under the microscope, guarantee crystal 7
The center deviation of the first light hole 4 on center and the first heat-conducting plate 1 is less than 0.1mm, the surface of crystal 7 and first thermally conductive
The depth of parallelism on the surface of plate 1 is less than 0.05mm, then thermally conductive in the first heat-conducting plate 1 and the contact surface of the second heat-conducting plate 2 and second
The uniform coated with thermally conductive glue of 5 inner periphery of crystal connecting hole or solder on plate 2, by the crystal connecting hole 5 on the second heat-conducting plate 2
Quasicrystal 7 is blocked, and in the uniform coated with thermally conductive glue of contact surface or solder of the second heat-conducting plate 2 and third heat-conducting plate 3, then
Third heat-conducting plate 3 is covered and heated, connects the first heat-conducting plate 1, the second heat-conducting plate 2 with third heat-conducting plate 3 and crystal
It connects hole 5 and realizes that high temperature stickup is fixed or is welded and fixed with crystal 7, temperature is depending on the fusing point according to heat-conducting glue or solder.
Claims (8)
1. a kind of fixed device of crystal for micro-slice laser, it is characterised in that: include sequentially connected first thermally conductive
Plate (1), the second heat-conducting plate (2) and third heat-conducting plate (3), first heat-conducting plate (1), the second heat-conducting plate (2), third heat-conducting plate
(3) the first light hole (4), crystal connecting hole (5), the second light hole (6) being arranged concentrically, the crystal connecting hole are respectively equipped with
(5) crystal (7) are equipped in, crystal connecting hole (5) aperture is all larger than the first light hole (4) aperture and the second light hole (6)
Aperture, the first light hole (4) aperture and the second light hole (6) aperture are respectively less than crystal (7) circumscribed circle diameter.
2. a kind of fixed device of crystal for micro-slice laser according to claim 1, it is characterised in that: described the
One heat-conducting plate (1), the second heat-conducting plate (2), third heat-conducting plate (3) are one of thermal conductive ceramic, tungsten copper piece, sapphire or more
Kind.
3. a kind of fixed device of crystal for micro-slice laser according to claim 1, it is characterised in that: first leads
Hot plate (1) and third heat-conducting plate (3) thickness are all larger than 0.1mm.
4. a kind of fixed device of crystal for micro-slice laser according to claim 1, it is characterised in that: first leads
Hot plate (1), the second heat-conducting plate (2) and third heat-conducting plate (3) geomery are all the same.
5. a kind of fixed device of crystal for micro-slice laser according to claim 1, it is characterised in that: the crystalline substance
Body connecting hole (5) aperture ratio crystal (7) big 10um or more of circumscribed circle diameter.
6. a kind of fixed device of crystal for micro-slice laser according to claim 1, it is characterised in that: the crystalline substance
Body connecting hole (5) is circular hole or square hole, and crystal (7) shape is identical with crystal connecting hole (5) shape cylindric or square
Column.
7. a kind of fixed device of crystal for micro-slice laser according to claim 1, it is characterised in that: the crystalline substance
Body (7) is welded in crystal connecting hole (5) by thermally conductive glue or low-temperature metal solder.
8. a kind of fixed device of crystal for micro-slice laser according to claim 1, it is characterised in that: described the
Pass through thermally conductive glue or low temperature between one heat-conducting plate (1) and the second heat-conducting plate (2), the second heat-conducting plate (2) and third heat-conducting plate
Brazing metal welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711403550.8A CN109962398A (en) | 2017-12-22 | 2017-12-22 | A kind of fixed device of crystal for micro-slice laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711403550.8A CN109962398A (en) | 2017-12-22 | 2017-12-22 | A kind of fixed device of crystal for micro-slice laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109962398A true CN109962398A (en) | 2019-07-02 |
Family
ID=67019180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711403550.8A Pending CN109962398A (en) | 2017-12-22 | 2017-12-22 | A kind of fixed device of crystal for micro-slice laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109962398A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4132063A1 (en) * | 1991-09-26 | 1993-04-08 | Deutsche Aerospace | Micro crystal laser cooling appts. - uses sapphire or synthetic diamond plane ground as conductor of thermal energy and is in contact with micro crystal surface |
| JPH05335679A (en) * | 1992-05-29 | 1993-12-17 | Nippon Columbia Co Ltd | Semiconductor laser-excited solid-state laser device |
| FR2899033A1 (en) * | 2006-03-24 | 2007-09-28 | Thales Sa | Optical laser beam amplifying device for use in vacuum container, has thermomechanical interface e.g. cryogenic liquid film, between crystal and part, partially immersing crystal in liquid, and provided in contact with cylindrical surface |
| US20120103569A1 (en) * | 2010-11-02 | 2012-05-03 | Gerald Ho Kim | Silicon-Based Cooling Package for Laser Gain Medium |
| CN203193115U (en) * | 2013-01-31 | 2013-09-11 | 鞍山煜宸科技有限公司 | Laser crystal heat radiation structure of end pump solid-state laser |
| CN204732668U (en) * | 2015-07-07 | 2015-10-28 | 杭州单色科技有限公司 | A kind of end pumping solid laser crystal heat abstractor |
| US9397469B1 (en) * | 2015-04-06 | 2016-07-19 | Voxtel, Inc. | Er,Yb:YAB laser system |
| CN207691188U (en) * | 2017-12-22 | 2018-08-03 | 广东华快光子科技有限公司 | A kind of crystal fixing device for micro-slice laser |
-
2017
- 2017-12-22 CN CN201711403550.8A patent/CN109962398A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4132063A1 (en) * | 1991-09-26 | 1993-04-08 | Deutsche Aerospace | Micro crystal laser cooling appts. - uses sapphire or synthetic diamond plane ground as conductor of thermal energy and is in contact with micro crystal surface |
| JPH05335679A (en) * | 1992-05-29 | 1993-12-17 | Nippon Columbia Co Ltd | Semiconductor laser-excited solid-state laser device |
| FR2899033A1 (en) * | 2006-03-24 | 2007-09-28 | Thales Sa | Optical laser beam amplifying device for use in vacuum container, has thermomechanical interface e.g. cryogenic liquid film, between crystal and part, partially immersing crystal in liquid, and provided in contact with cylindrical surface |
| US20120103569A1 (en) * | 2010-11-02 | 2012-05-03 | Gerald Ho Kim | Silicon-Based Cooling Package for Laser Gain Medium |
| CN203193115U (en) * | 2013-01-31 | 2013-09-11 | 鞍山煜宸科技有限公司 | Laser crystal heat radiation structure of end pump solid-state laser |
| US9397469B1 (en) * | 2015-04-06 | 2016-07-19 | Voxtel, Inc. | Er,Yb:YAB laser system |
| CN204732668U (en) * | 2015-07-07 | 2015-10-28 | 杭州单色科技有限公司 | A kind of end pumping solid laser crystal heat abstractor |
| CN207691188U (en) * | 2017-12-22 | 2018-08-03 | 广东华快光子科技有限公司 | A kind of crystal fixing device for micro-slice laser |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220414 Address after: 528400 zone a, third floor, No. 28, Yuquan Road, Torch Development Zone, Zhongshan City, Guangdong Province Applicant after: GUANGDONG HUAKUAI PHOTON TECHNOLOGY CO.,LTD. Applicant after: Guangdong Huayi Laser Technology Co., Ltd Address before: 3 / F, building 1, Shumao building, 6 Xiangxing Road, Torch Development Zone, Zhongshan City, Guangdong Province, 528400 Applicant before: GUANGDONG HUAKUAI PHOTON TECHNOLOGY CO.,LTD. Applicant before: GUANGDONG HANTANG RAPID MANUFACTURING APPLICATION TECHNOLOGY RESEARCH INSTITUTE Co.,Ltd. Applicant before: GUANGDONG LIANGZE LASER TECHNOLOGY Co.,Ltd. |