CN109962176B - Display device, display panel thereof and preparation method of display panel - Google Patents
Display device, display panel thereof and preparation method of display panel Download PDFInfo
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- CN109962176B CN109962176B CN201910239186.9A CN201910239186A CN109962176B CN 109962176 B CN109962176 B CN 109962176B CN 201910239186 A CN201910239186 A CN 201910239186A CN 109962176 B CN109962176 B CN 109962176B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention provides a display device, a display panel thereof and a preparation method of the display panel, wherein the display panel comprises the following components in a non-display area: the packaging layer at least comprises a first inorganic layer, and the bonding layer is used for adhering the metal layer and the first inorganic layer. According to the invention, through the arrangement of the bonding layer, the sealing effect between the metal layer and the first inorganic layer is improved, and the external water vapor and oxygen entering paths are blocked, so that the packaging failure is solved, the problem of poor edge display effect is solved, and the overall display effect is improved.
Description
Technical Field
The invention relates to the technical field of OLED display equipment, in particular to a display device, a display panel of the display device and a preparation method of the display panel.
Background
In recent years, display devices, especially display devices based on Organic Light Emitting Diodes (OLEDs), are becoming popular flat panel display products at home and abroad. The OLED display panel has the characteristics of self-luminescence, wide viewing angle, short reaction time, high luminous efficiency, wide color gamut, low working voltage, thin panel, large size, flexible panel, simple manufacturing process and the like, and has the potential of low cost.
When the OLED display panel displays, the problem of poor edge display effect often occurs, which seriously affects the yield of the OLED display panel.
In view of the above, the present invention provides a new display device, a display panel thereof, and a method for manufacturing the display panel, which changes the packaging structure of the non-display area to solve the above technical problems.
Disclosure of Invention
The invention aims to provide a display device, a display panel of the display device and a preparation method of the display panel, and the display effect is improved by changing the packaging structure of a non-display area.
To achieve the above object, a first aspect of the present invention provides a display panel comprising:
a substrate including a display area and a non-display area surrounding the display area;
the metal layer, the bonding layer and the packaging layer are positioned in the non-display area;
the packaging layer at least comprises a first inorganic layer, and the bonding layer is used for adhering the metal layer and the first inorganic layer.
Optionally, the material of the bonding layer is at least one of TiN, WN, TaN, TaSiN, TaC, and MoW alloy.
Optionally, the metal layer comprises: and the second stress buffer layer, the conducting wire layer and the first stress buffer layer are sequentially arranged in the non-display area.
Optionally, the first stress buffer layer is made of Ti, Ta, or W, and/or the wire layer is made of at least one of Al, Cu, or Au.
Optionally, the sum of the thicknesses of the first stress buffer layer and the bonding layer ranges from
Optionally, the ratio of the thicknesses of the bonding layer and the first stress buffer layer ranges from 1/3 to 2.
Optionally, a dam is disposed on the bonding layer, the first inorganic layer covers the dam and the bonding layer on the inner side and the outer side of the dam, the inner side is a side close to the display area, and the outer side is a side far from the display area.
A second aspect of the present invention provides a method for manufacturing a display panel, including:
providing a substrate, wherein the substrate comprises a display area and a non-display area surrounding the display area;
forming a metal layer at least in the non-display region;
forming an adhesive layer on the metal layer;
and forming an encapsulation layer on the bonding layer, wherein the encapsulation layer at least comprises a first inorganic layer, and the bonding layer is used for adhering the metal layer and the first inorganic layer.
Optionally, forming a metal layer on the non-display region, and forming an adhesive layer on the metal layer; and simultaneously, the metal layer and the bonding layer are formed in the display area in the same process, and the metal layer and the bonding layer of the display area are source and drain electrodes of a transistor in the pixel driving circuit.
Optionally, the metal layer comprises: the wire layer and the first stress buffer layer are sequentially arranged in the non-display area, the first stress buffer layer is made of Ti, and the bonding layer is made of TiN; the TiN bonding layer is formed by introducing nitrogen and performing a chemical vapor deposition method when the Ti first stress buffer layer is deposited; the chemical vapor deposition process conditions are as follows: power range: 250W-350W, pressure intensity range: 30 mTorr-50 mTorr, nitrogen flow range is: 450 sccm to 500sccm, and the reaction time range is as follows: 100s to 150 s.
In addition, a third aspect of the present invention provides a display device including the display panel described in any one of the above.
Compared with the prior art, the invention has the beneficial effects that:
1) the inventor analyzes that one reason why the edge display effect of the OLED display panel is poor is that: the OLED light-emitting functional layer is very sensitive to water vapor and oxygen, and when the packaging effect of the non-display area at the frame is poor, external water vapor and oxygen easily enter the display area from the non-display area, so that the light-emitting efficiency of the OLED light-emitting functional layer in the light-emitting unit at the edge is affected.
Based on the above analysis, the present invention changes the packaging structure of the non-display area by using a metal layer, a bonding layer and a packaging layer, wherein the packaging layer at least includes a first inorganic layer, and the bonding layer is used for adhering the metal layer and the first inorganic layer. Through the setting of tie coat, promote the sealed effect between metal level and the first inorganic layer, block the admission route of external steam, oxygen to solve and solve the encapsulation inefficacy, and then marginal display effect poor problem promotes whole display effect.
2) In an alternative, the bonding layer is made of at least one of TiN, WN, TaN, TaSiN, TaC and MoW alloy. The TiN material is relative to simple substance Ti metal, the TaN, TaSiN and TaC material is relative to simple substance Ta metal, and the WN and MoW material are relative to simple substance W metal, so that intermolecular acting force between the WN and MoW metal and among Ti, Ta and W metal can be correspondingly improved, intermolecular acting force between the WN and MoW metal and between inorganic materials in the first inorganic layer can also be improved, adhesion performance among layer structures (a metal layer, a bonding layer and a packaging layer) is increased, packaging failure of boundaries is reduced, and packaging effect is improved.
3) In an alternative, the metal layer includes: and the second stress buffer layer, the conducting wire layer and the first stress buffer layer are sequentially arranged in the non-display area. The first stress buffer layer and the second stress buffer layer can prevent Hillocks and cavities (Voids) from being generated on the wire layer due to thermal stress aggravation metal electromigration in the upper and lower directions, and further prevent the problems of poor signal transmission performance and even electrical interconnection failure caused by the Hillocks and the cavities.
4) In an alternative, the second stress buffer layer and the first stress buffer layer are made of the same material. Other alternatives may also differ, and the invention is not limited in this regard.
5) In an alternative aspect, the sum of the thicknesses of the first stress buffering layer and the bonding layer ranges from
The sum of the thicknesses is equal to the thickness of the first stress buffer layer in the prior art, in other words, the arrangement of the bonding layer is compatible with the prior art, not only can the actual production requirement be met, but also the problem of insufficient adhesion between the films can be solved.
6) In the alternative, the ratio of the thicknesses of the bonding layer and the first stress buffer layer ranges from 1/3 to 2. Research shows that the bonding layer and the first stress buffer layer with the thickness proportion can play a good adhesion effect on one hand, and the first stress buffer layer can still inhibit metal electromigration in the metal layer on the other hand.
7) In an alternative, the metal layer, the adhesive layer and a source drain of a transistor in the pixel driving circuit are formed in the same process. In other words, the metal layer and the bonding layer of the non-display area share the same mask plate with the transistor source and drain of the display area, so that no additional process is added; the bonding layer can be generated by introducing gas of corresponding elements to react with metal in the metal layer after the metal layer is manufactured.
8) In an alternative scheme, a dam is arranged on the bonding layer, the first inorganic layer covers the dam and the bonding layer on the inner side and the outer side of the dam, the inner side is close to the display area, and the outer side is far away from the display area. The dam is a protrusion, and compared with a planar structure, the height fluctuation structure can increase the length of an external water vapor and oxygen entering path, and further prevent the OLED light-emitting function layer at the edge of the display area from being interfered.
9) In an alternative scheme, the first stress buffer layer is made of Ti, and the bonding layer is made of TiN; the TiN bonding layer is formed by introducing nitrogen and performing a chemical vapor deposition method when the Ti first stress buffer layer is deposited; the chemical vapor deposition process conditions are as follows: power range: 250W-350W, pressure intensity range: 30 mTorr-50 mTorr, nitrogen flow range is: 450 sccm to 500sccm, and the reaction time range is as follows: 100s to 150 s. The above process parameters give a specific example of fabricating the first stress buffer layer and the bonding layer.
Drawings
FIG. 1 is a top view of a display panel according to an embodiment of the invention;
FIG. 2 is a cross-sectional view taken along line AA in FIG. 1;
FIG. 3 is a cross-sectional view taken along line BB in FIG. 1;
FIG. 4 is a schematic partial cross-sectional view of a non-display area in a display panel according to another embodiment of the present invention;
FIG. 5 is a top view of a display panel according to yet another embodiment of the present invention;
FIG. 6 is a cross-sectional view taken along line CC in FIG. 5;
fig. 7 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention.
To facilitate an understanding of the invention, all reference numerals appearing in the invention are listed below:
The conductive layer 11a and the first stress buffer layer 11b
First organic layer 132 second inorganic layer 133
Dam 14 second stress buffer layer 11c
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
FIG. 1 is a top view of a display panel according to an embodiment of the invention; fig. 2 is a sectional view taken along line AA in fig. 1.
Referring to fig. 1 and 2, the display panel 1 includes:
a substrate 10 including a display area 101 and a non-display area 102 surrounding the display area 101;
and a metal layer 11, an adhesive layer 12 and an encapsulation layer 13 in the non-display region 102;
the encapsulation layer 13 at least includes a first inorganic layer 131, and the adhesive layer 12 is used for adhering the metal layer 11 and the first inorganic layer 131.
Specifically, the substrate 10 may be a hard substrate such as glass, or a flexible substrate such as a substrate made of Polyimide (PI).
The display area 101 includes an array of light emitting units, each of which may include a plurality of light emitting sub-units. Each light emitting subunit includes: the OLED comprises an anode, a cathode and an OLED light-emitting functional layer sandwiched between the anode and the cathode. The OLED light-emitting functional layer in each light-emitting subunit corresponds to a primary color, such as red, green, and blue, or red, green, blue, and yellow, which is not limited in the present invention.
When the display panel 1 is actively driven to emit light, the display area 101 further has an array pixel driving circuit.
When the display panel 1 is driven to emit light passively, the light-emitting cells in the display area 101 are selected by applying voltages to the anode bars and the cathode bars which are crossed in rows and columns.
In one embodiment, the display area 101 is a non-transparent display area. In this embodiment, for the top-emitting OLED display panel 1, the anode is a reflective anode, and the cathode is a transmissive cathode; for a bottom-emitting OLED display panel 1, the anode is a light-transmissive anode and the cathode is a reflective cathode.
In one embodiment, the display area 101 is a transparent display area. When the array type light-emitting unit is driven by the pixel driving circuit or selected by the cross point, the transparent display area has a display function; when the array type light-emitting unit is not driven by the pixel driving circuit or is not selected by the cross point, the transparent display area has a light-transmitting function. A light sensor may be disposed below the display area 101, and the light sensor includes: one or a combination of a camera, an iris recognition sensor and a fingerprint recognition sensor. Under the light transmission function, the functions of image acquisition and the like can be performed. In this embodiment, both the anode and the cathode of the top-emitting OLED display panel 1 and the bottom-emitting OLED display panel 1 are made of light-transmitting materials.
In one embodiment, the display area 101 includes a transparent display area and a non-transparent display area. For example, a light sensor may be disposed below the transparent display area, the light sensor including: one or a combination of a camera, an iris recognition sensor and a fingerprint recognition sensor. In other words, the OLED display panel 1 in the present embodiment is a full-screen. In this embodiment, for the top-emitting OLED display panel 1, in the non-transparent display region: the anode is a reflective anode, and the cathode is a light-transmitting cathode; in the transparent display area: the anode is a light-transmitting anode, and the cathode is a light-transmitting cathode; for a bottom emitting OLED display panel 1, in the non-transparent display area: the anode is a light-transmitting anode, and the cathode is a reflecting cathode; in the transparent display area: the anode is a light-transmitting anode, and the cathode is a light-transmitting cathode.
Referring to fig. 2, the metal layer 11 may include: a conductive layer 11a and a first stress buffer layer 11b disposed from bottom to top in the non-display region 102.
The wiring layer 11a may supply an electrical signal to each light emitting cell of the display area 101. The material of the conductive layer 11a may be any conventional conductive material, and may be, for example, metal aluminum (Al), copper (Cu), or gold (Au).
The first stress buffer layer 11b can prevent Hillocks (Hillocks) and Voids (Voids) from being generated in the conductive line layer 11a due to thermal stress aggravating metal electromigration, and further prevent the problems of poor signal transmission performance and even electrical interconnection failure caused by the Hillocks and the Voids. The first stress buffer layer 11b may be made of, for example, titanium (Ti), tantalum (Ta), or tungsten (W).
Still referring to fig. 2, the encapsulation layer 13 may be an existing thin film encapsulation layer (TFE), which may include, from bottom to top: a first inorganic layer 131, a first organic layer 132, and a second inorganic layer 133.
The first inorganic layer 131 and the second inorganic layer 133 may be SiO2、SiNx、SiON、Al2O3、TiO2、Ta2O5、HfO2、ZrO2BST or PZT.
The first organic layer 132 may be general-purpose polymer (PMMA, PS), polymer derivative having a phenolic group, acrylic polymer, imide-based polymer, aryl ether-based polymer, amide-based polymer, fluorine-based polymer, p-xylene-based polymer, vinyl alcohol-based polymer, and a mixture thereof.
In other alternatives, the encapsulation layer 13 may also include more than three inorganic, organic, overlapping structures.
The material of the adhesion layer 12 may be at least one of TiN, WN, TaN, TaSiN, TaC, and MoW alloys. The material can improve the molecular bonding force between the metal atoms and the inorganic material in the first inorganic layer 131, compared to the metal atoms in the first stress buffer layer 11b, thereby achieving the adhesion performance.
In an alternative, the ratio of the thickness of the adhesive layer 12 to that of the first stress buffer layer 11b may be controlled to be in the range of 1/3-2. Research shows that the bonding layer 12 and the first stress buffer layer 11b with the above thickness ratio can achieve a good adhesion effect on one hand, and the first stress buffer layer 11b can still inhibit the metal electromigration in the wire layer 11a on the other hand.
In one alternative, the sum of the thicknesses of the first stress buffer layer 11b and the adhesive layer 12 may be controlled within a range of
The sum of the thicknesses is equal to the thickness of the first stress buffer layer in the prior art, in other words, the arrangement of the bonding layer 12 is compatible with the prior art, which not only can meet the actual production requirement, but also can solve the problem of insufficient adhesion between the films.
Fig. 3 is a cross-sectional view taken along line BB in fig. 1. As shown in fig. 3, a bank 14 may be provided on the adhesive layer 12, and the first inorganic layer 131 covers the bank 14 and the adhesive layer 12 on both the inner and outer sides of the bank 14, the inner side being a side close to the display region 101 and the outer side being a side far from the display region 101. The dam 14 is arranged one turn around the display area 101. The dam 14 is a protrusion, and compared with a planar structure, the height-and-height structure can increase the length of the entering path of external water vapor and oxygen, and further prevent the OLED light-emitting functional layer at the edge of the display area from being interfered. The cross section of the dam 14 can be a trapezoid with a small upper part and a large lower part, and the side surface can also be in a step shape, a wave shape and the like, so that the length of the entering path of external water vapor and oxygen can be further increased compared with the rectangular cross section. The height of the dam 14 may range from 4 μm to 6 μm.
Fig. 4 is a schematic partial cross-sectional view of a non-display area in a display panel according to another embodiment of the invention.
Referring to fig. 4 and 2, it can be seen that the display panel 2 in the present embodiment has substantially the same structure as the display panel 1 in the previous embodiment, and the differences are only: the metal layer 11 includes: a second stress buffer layer 11c, a conductive layer 11a and a first stress buffer layer 11b disposed from bottom to top in the non-display region 102.
The first stress buffer layer 11a and the second stress buffer layer 11c can prevent the conductive line 11a from generating Hillocks (Hillocks) and Voids (Voids) due to thermal stress aggravating metal electromigration in the vertical direction, thereby improving the signal transmission performance.
The second stress buffer layer 11c and the first stress buffer layer 11b may be made of the same material or different materials. The specific material of the second stress buffer layer 11c may be titanium (Ti), tantalum (Ta), or tungsten (W), and may also be formed in the same process as the source and drain of the transistor in the pixel driving circuit.
FIG. 5 is a top view of a display panel according to yet another embodiment of the present invention; fig. 6 is a sectional view taken along line CC in fig. 5.
Referring to fig. 5 and 6 and fig. 1 and 2, it can be seen that the display panel 3 of the present embodiment has substantially the same structure as the display panel 1 of the previous embodiment, and the differences are only: the dike 14 includes an inner dike 141 and an outer dike 142.
Both the inner and outer banks 141 and 142 are disposed on the adhesive layer 12, and the inner bank 141 is closer to the display region 101 than the outer bank 142.
The height of the outer dike 142 is not lower than the height of the inner dike 141. The inner bank 141 serves to preliminarily define the flow range of the first organic layer 132 in the encapsulation layer 13; the outer bank 142 serves to further define the flow range of the first organic layer 132.
The height of the inner bank 141 may range from 2 μm to 4 μm, and/or the height of the outer bank 142 may range from 4 μm to 6 μm.
Referring to fig. 6, it can be seen that the inner bank 141 and the outer bank 142 can further increase the length of the ingress path of external moisture and oxygen, and further prevent the OLED light emitting function layer at the edge of the display region from being interfered, compared to the structure with only one bank 14.
The cross sections of the inner dike 141 and the outer dike 142 may be trapezoidal with a small top and a large bottom, and the side surfaces may also be stepped or wavy, and compared with a rectangular cross section, the length of the entering path of external water vapor and oxygen can be further increased. The arrangement of the plurality of dams can further prevent external water vapor and oxygen from entering, and the packaging effect is improved; but also can prevent the abnormal display caused by the internal extension of the crack of the packaging edge during cutting and improve the display effect.
An embodiment of the invention further provides a manufacturing method of the display panel. FIG. 7 is a flow chart of a method of preparation.
Referring to the flow shown in fig. 7 and the structures shown in fig. 1 to 6, the method for manufacturing a display panel includes:
executing step S1, providing a substrate 10, wherein the substrate 10 comprises a display area 101 and a non-display area 102 surrounding the display area 101;
step S2 is executed to form a metal layer 11 at least in the non-display area 102;
step S3 is performed to form adhesive layer 12 on metal layer 11;
step S4 is executed to form an encapsulation layer 13 on the adhesive layer 12, where the encapsulation layer 13 at least includes the first inorganic layer 131, and the adhesive layer 12 is used to adhere the metal layer 11 and the first inorganic layer 131.
For the metal layer 11, one alternative, as shown in fig. 2, may include: a conductive line layer 11a and a first stress buffer layer 11b disposed from bottom to top in the non-display region 102; in another alternative, as shown in fig. 4, may include: a second stress buffer layer 11c, a conductive layer 11a and a first stress buffer layer 11b disposed from bottom to top in the non-display region 102.
In one embodiment, the steps S2, S3 of forming the metal layer 11 and the adhesive layer 12 include:
a first time period: first, forming metal aluminum (Al), copper (Cu), or gold (Au) serving as the wire layer 11a by performing physical vapor deposition or chemical vapor deposition;
a second time period: then, performing physical vapor deposition or chemical vapor deposition to form a first stress buffer layer 11b on the wire layer 11a, wherein the first stress buffer layer 11b is made of titanium (Ti), tantalum (Ta), or tungsten (W);
a third time period: then, the first stress buffer layer 11b is deposited by physical vapor deposition or chemical vapor deposition, and nitrogen is introduced to react with metal titanium (Ti), tantalum (Ta) or tungsten (W) to generate a TiN, TaN and WN bonding layer 12 correspondingly; or introducing nitrogen and silicon-containing gas to react with the tantalum (Ta) to generate the TaSiN bonding layer 12; or introducing gas containing C to react with the metal tantalum (Ta) to generate a TaC bonding layer 12; or simultaneously sputtering molybdenum (Mo) to react with tungsten (W) to form the MoW alloy bonding layer 12.
The thickness ratio of the bonding layer 12 to the first stress buffer layer 11b can be controlled within a range of 1/3 to 2 by adjusting the flow rate of the nitrogen gas, the silicon-containing gas, or the C-containing gas, or the sputtering rate of the sputtering metal molybdenum (Mo).
The sum of the thicknesses of the first stress buffer layer 11b and the adhesion layer 12 can be controlled within a range of
In a specific example, the first stress buffer layer 11b is made of Ti, and the bonding layer 12 is made of TiN; the TiN bonding layer 12 is formed by introducing nitrogen gas through a chemical vapor deposition method when the Ti first stress buffer layer 11b is deposited; the chemical vapor deposition process conditions are as follows: power range: 250W-350W, pressure intensity range: 30 mTorr-50 mTorr, nitrogen flow range is: 450 sccm to 500sccm, and the reaction time range is as follows: 100s to 150 s.
In the alternative, the metal layer 11 is formed on the non-display area 102, and the adhesive layer 12 is formed on the metal layer 11; meanwhile, the metal layer 11 and the adhesive layer 12 are formed in the display region 101 in the same step, and the metal layer 11 and the adhesive layer 12 in the display region 101 are source and drain electrodes of a transistor in the pixel driving circuit. Specifically, the same mask may be used, and the pattern in the mask has openings corresponding to the source and drain electrodes in the display region 101 and the metal layer 11 in the non-display region 102; the metal layer 11 and the bonding layer 12 of the source/drain and the non-display region 102 can be formed simultaneously by one time of physical vapor deposition or chemical vapor deposition.
In one embodiment, the step S2, the step S3 of simultaneously forming the source/drain, the metal layer 11, and the adhesive layer 12 includes:
a first time period: firstly, carrying out physical vapor deposition or chemical vapor deposition to form metal aluminum (Al), copper (Cu) or gold (Au) serving as a lead layer 11a and a source/drain metal layer;
a second time period: then, physical vapor deposition or chemical vapor deposition is still carried out to form a conducting wire layer 11a and a first stress buffer layer 11b on the source drain metal layer, wherein the first stress buffer layer 11b is made of metal titanium (Ti), tantalum (Ta) or tungsten (W);
a third time period: then, the first stress buffer layer 11b is deposited by physical vapor deposition or chemical vapor deposition, and nitrogen is introduced to react with metal titanium (Ti), tantalum (Ta) or tungsten (W) to generate a TiN, TaN and WN bonding layer 12 correspondingly; or introducing nitrogen and silicon-containing gas to react with the tantalum (Ta) to generate the TaSiN bonding layer 12; or introducing gas containing C to react with the metal tantalum (Ta) to generate a TaC bonding layer 12; or simultaneously sputtering molybdenum (Mo) to react with tungsten (W) to form the MoW alloy bonding layer 12.
In step S4, the material of the first inorganic layer 131 may be SiO2、SiNx、SiON、Al2O3、TiO2、Ta2O5、HfO2、ZrO2The existing materials such as BST or PZT can be generated by physical vapor deposition or chemical vapor deposition.
It is understood that the display panels 1, 2, and 3 may be provided with a touch layer as a touch panel in addition to the display device. The display panels 1, 2, 3 may also be integrated with other components as a semi-finished product and assembled together to form a display device such as a mobile phone, a tablet computer, a vehicle-mounted display screen, etc.
In the display device, the transparent display area below of display panel 1, 2, 3 corresponds and sets up the light sensor, and the light sensor includes: one or a combination of a camera, an iris recognition sensor and a fingerprint recognition sensor.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. A display panel, comprising:
a substrate including a display area and a non-display area surrounding the display area;
the metal layer, the bonding layer and the packaging layer are positioned in the non-display area;
the packaging layer at least comprises a first inorganic layer, and the bonding layer is used for adhering the metal layer and the first inorganic layer; the material of the bonding layer is at least one of TiN, WN, TaN, TaSiN, TaC and MoW alloy, and the bonding layer is in direct contact with simple substance Ti metal, simple substance Ta metal or simple substance W metal in the metal layer.
2. The display panel according to claim 1, wherein the metal layer comprises: and the second stress buffer layer, the conducting wire layer and the first stress buffer layer are sequentially arranged in the non-display area.
3. The display panel according to claim 2, wherein the first stress buffer layer is made of Ti, Ta, or W, and/or the wire layer is made of at least one of Al, Cu, or Au.
4. The display panel according to claim 2, wherein the sum of the thicknesses of the first stress buffer layer and the adhesive layer is in a range of
And/or the thickness ratio of the bonding layer to the first stress buffer layer is 1/3-2.
5. The display panel according to claim 1, wherein a dam is provided on the adhesive layer, the first inorganic layer covers the dam and the adhesive layer on both inner and outer sides of the dam, the inner side is a side close to the display region, and the outer side is a side far from the display region.
6. A method for manufacturing a display panel, comprising:
providing a substrate, wherein the substrate comprises a display area and a non-display area surrounding the display area;
forming a metal layer at least in the non-display region;
forming an adhesive layer on the metal layer;
forming an encapsulation layer on the bonding layer, wherein the encapsulation layer at least comprises a first inorganic layer, and the bonding layer is used for adhering the metal layer and the first inorganic layer; the material of the bonding layer is at least one of TiN, WN, TaN, TaSiN, TaC and MoW alloy, and the bonding layer is in direct contact with simple substance Ti metal, simple substance Ta metal or simple substance W metal in the metal layer.
7. The method of manufacturing a display panel according to claim 6, wherein a metal layer is formed in the non-display region, and an adhesive layer is formed on the metal layer; and simultaneously, the metal layer and the bonding layer are formed in the display area in the same process, and the metal layer and the bonding layer of the display area are source and drain electrodes of a transistor in the pixel driving circuit.
8. The method according to claim 6, wherein the metal layer comprises: the wire layer and the first stress buffer layer are sequentially arranged in the non-display area, the first stress buffer layer is made of Ti, and the bonding layer is made of TiN; the TiN bonding layer is formed by introducing nitrogen and performing a chemical vapor deposition method when the Ti first stress buffer layer is deposited; the chemical vapor deposition process conditions are as follows: power range: 250W-350W, pressure intensity range: 30 mTorr-50 mTorr, nitrogen flow range is: 450 sccm to 500sccm, and the reaction time range is as follows: 100s to 150 s.
9. A display device, comprising: the display panel of any one of claims 1 to 5.
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| CN201910239186.9A CN109962176B (en) | 2019-03-27 | 2019-03-27 | Display device, display panel thereof and preparation method of display panel |
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| CN201910239186.9A CN109962176B (en) | 2019-03-27 | 2019-03-27 | Display device, display panel thereof and preparation method of display panel |
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| CN109962176A CN109962176A (en) | 2019-07-02 |
| CN109962176B true CN109962176B (en) | 2021-10-29 |
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| CN114787699B (en) | 2020-09-29 | 2023-10-20 | 京东方科技集团股份有限公司 | Display panel, display device, method for manufacturing display panel, and counter substrate |
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