KR20040079476A - The organic electro-luminescence device and method for fabricating of the same - Google Patents

Abstract

PURPOSE: An organic electro-luminescence device and a manufacturing method thereof are provided to improve production efficiency by forming a thin film transistor array unit and an organic emitter on a separate substrate. CONSTITUTION: A driving device(T) has an extension unit extended to a pixel area. A protecting film includes a first contact hole which exposes a drain electrode(128) of the driving device and a second contact hole which exposes an extension unit of the drain electrode. A gap maintenance unit(140) is formed on the exposed extension unit. A connection electrode(142) is connected to the exposed drain electrode of the driving device and formed along the gap maintenance unit, thereby being contacted to the exposed extension unit around the gap maintenance unit. A first transparent electrode(202) is provided on a surface of a second substrate facing a first substrate(100). An organic emitting layer(204) is provided on a lower portion of the first electrode. A second electrode(206) is independently provided on a lower portion of the organic emitting layer at every pixel area and contacted to the connection electrode.

Description

The organic electroluminescent device and method for manufacturing the same {The organic electro-luminescence device and method for fabricating of the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting device, and more particularly, to a dual plate type organic light emitting device in which an organic light emitting unit and a thin film transistor array unit applying a signal thereto are manufactured on a separate substrate.

In general, organic light emitting diodes inject electrons and holes into the light emitting layer from the electron injection electrodes and the hole injection electrodes, respectively, to inject the injected electrons. ) Is a device that emits light when the exciton, which is a combination of holes and holes, drops from the excited state to the ground state.

Due to this principle, unlike the conventional thin film liquid crystal display device, since a separate light source is not required, the volume and weight of the device can be reduced.

In addition, the organic EL device exhibits high quality panel characteristics (low power, high brightness, high reaction rate, low weight). These characteristics make OELD a powerful next-generation display that can be used in most electronic applications such as mobile communication terminals, car navigation systems (CNS), PDAs, Camcorders, and Palm PCs.

In addition, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than conventional LCD.

The method of driving the organic light emitting diode can be classified into a passive matrix type and an active matrix type.

The passive matrix type organic light emitting device has a simple structure and a simple manufacturing method. However, the passive matrix type organic light emitting device has a high power consumption and a large area of the display device, and the opening ratio decreases as the number of wirings increases.

On the other hand, an active matrix organic light emitting diode has an advantage of providing high luminous efficiency and high image quality.

Hereinafter, a configuration of a conventional active matrix organic light emitting diode is described with reference to FIG. 1.

1 is a view schematically showing a configuration of a conventional organic light emitting device.

As illustrated, the organic light emitting diode 10 may include a thin film transistor (T) array portion 14 on the transparent first substrate 12 and a first electrode on the thin film transistor array portion 14. 16, the organic light emitting layer 18, and the second electrode 20 are formed.

In this case, the light emitting layer 18 expresses the colors of red (R), green (G), and blue (B). In a general method, a separate light emitting red, green, and blue light is generated for each pixel (P). Organic materials are patterned and used.

The first substrate 12 is bonded to the second substrate 28 having the moisture absorbent 22 and the sealant 26, thereby completing the encapsulated organic light emitting device 10.

At this time, the moisture absorbent 22 is for removing moisture and oxygen that can penetrate into the capsule, and a part of the substrate 28 is etched and the moisture absorbent 22 is filled in the etched portion and fixed with a tape 25. .

Hereinafter, the thin film transistor array unit of the organic light emitting diode will be described with reference to FIG. 2.

2 is a plan view schematically illustrating one pixel of a thin film transistor array unit included in an organic light emitting diode.

In general, the thin film transistor array unit of the active matrix organic light emitting diode has a switching element T _S , a driving element T _D , and a storage capacitor C for each of the plurality of pixels P defined in the substrate 12. _ST ) is configured, and the switching element T _S or the driving element T _D may be configured by a combination of one or more thin film transistors, respectively.

In this case, the substrate 12 uses a transparent insulating substrate, and the material may be, for example, glass or plastic.

As shown in the drawing, a gate wiring 32 formed in one direction spaced apart from each other by a predetermined distance on the substrate 12 and a data wiring 34 intersecting with each other with the gate wiring 32 and an insulating film interposed therebetween. .

At the same time, the power supply wiring 35 is configured in one direction at a position spaced in parallel with the data wiring 34.

The switching element T _S and the driving element T _D include gate electrodes 36 and 38, an active layer 40 and 42, a source electrode 46 and 48, and a drain electrode 50 and 52, respectively. Thin film transistors are used.

In the above-described configuration, the gate electrode 36 of the switching element T _S is connected to the gate line 32, and the source electrode 46 is connected to the data line 34.

The drain electrode 50 of the switching element T _S is connected to the gate electrode 38 of the driving element T _D through the contact hole 54.

The source electrode 48 of the driving element T _D is connected to the power line 35 through the contact hole 56.

In addition, the drain electrode 52 of the driving element T _D is configured to contact the first electrode 16 configured in the pixel portion P.

In this case, the power line 35 and the polycrystalline silicon pattern 15 under the power layer 35 are overlapped with an insulating layer therebetween to form a storage capacitor C _ST .

Hereinafter, a cross-sectional structure of an organic light emitting diode including a thin film transistor array unit configured as described above with reference to FIG. 3 will be described.

FIG. 3 is a cross-sectional view of the organic light emitting device cut along the line III-III ′ of FIG. 2 (only a cross-sectional view of the driving device T _D and the light emitting unit).

As illustrated, the organic light emitting diode includes a thin film transistor T _D , which is a driving device including a gate electrode 38, an active layer 42, a source electrode 56, and a drain electrode 52. a driving element interposed between the insulating layer 57, the upper portion of the (T _D), the driving element and the first electrode 16 contacting the drain electrodes 52 in the (T _D), the specific on top of the first electrode 16 A light emitting layer 18 emitting color light and a second electrode 20 are formed on the light emitting layer 18.

The storage capacitor C _ST is configured in parallel with the driving element T _D , and the source electrode 56 is configured to contact the second electrode (power wiring) 35 of the storage capacitor C _ST . Under the capacitor second electrode 36, a capacitor first electrode 15 made of polycrystalline silicon is formed.

The second electrode 20 is formed on the entire surface of the substrate including the driving device T _D , the storage capacitor C _ST , and the organic light emitting layer 18.

Each pixel including the driving element and the storage capacitor described above is separated through a partition wall (not shown).

In the light emitting unit including the first electrode 16, the light emitting layer 18, and the second electrode 20, bottom emission and top emission according to transparency of the first electrode and the second electrode may be used. ) Are largely divided into

The bottom emission type is stable when encapsulating an organic light emitting device, and has a high degree of freedom in processing, but has a limitation in opening ratio, making it difficult to apply to high-resolution products.

The top-emitting type has a long lifespan because of its high degree of freedom in the design of the thin film transistor and the improvement of the aperture ratio, but the transparency is limited by the transparent or semi-transparent cathode electrode, which reduces the light efficiency and minimizes the loss of light transmittance. Since the protective film is formed, there is a problem that it does not sufficiently block the outside air.

The present invention has been proposed for the purpose of solving the above problems, and proposes a dual plate type organic light emitting device having a thin film transistor array unit and a light emitting unit respectively formed on a separate substrate.

The present invention is configured by connecting a separate connection electrode for inputting a signal output from the driving device of the thin film transistor array unit with the drain electrode of the driving device.

At this time, in the configuration of a separate gap holding means for maintaining the height of the connection electrode while maintaining the gap between the two substrates, the connection electrode is characterized in that it has a plurality of contacts with the drain electrode.

Such a configuration has an advantage in that contact failure does not occur because the connection electrode has a large number of contacts even if a failure occurs that the connection electrode is lifted or partially disconnected due to the pressure applied during the process of bonding the two substrates. have.

1 is a cross-sectional view schematically showing the configuration of a conventional organic light emitting device,

2 is a plan view schematically illustrating one pixel of a thin film transistor array unit;

3 is a cross-sectional view taken along line III-III ′ of FIG. 2;

4 is a cross-sectional view schematically showing the configuration of an organic light emitting device according to the present invention;

5 is a plan view schematically illustrating a configuration of a thin film transistor array unit corresponding to one pixel of an organic light emitting diode according to the present invention;

FIG. 6 is a cross-sectional view taken along line VV ′ of FIG. 5;

7A to 7F are cross-sectional views taken along the line VV ′ of FIG. 5, and according to the process sequence of the present invention.

8 is a cross-sectional view illustrating a configuration of an organic light emitting diode according to a second exemplary embodiment of the present invention.

<Brief description of the main parts of the drawing>

100: first substrate 128: drain electrode

140: gap holding means 142: connecting electrode

200: second substrate 202: first electrode

204: organic light emitting layer 206: second electrode

250: sealant pattern

The organic light emitting device according to the first aspect of the present invention for achieving the above object comprises a first substrate and a second substrate configured to be spaced apart from each other and defined a plurality of pixel regions (sub pixels); A switching element and a driving element, each of the pixel regions of one surface of the first substrate, comprising a gate electrode, an active layer, a source electrode, and a drain electrode, the driving element comprising: a driving element having an extension extending to the pixel region; A protective film formed on the driving device and the switching device, the protective film including a first contact hole exposing a drain electrode of the driving device and a second contact hole exposing an extension of the drain electrode; Gap holding means configured on the exposed extension; A connection electrode connected to the exposed drain electrode of the driving element and formed along the gap-bearing means and in contact with an extension part exposed to the periphery of the gap holding means; A transparent first electrode formed on one surface of a second substrate facing the first substrate; An organic light emitting layer formed under the first electrode; A lower electrode of each of the pixel areas is formed under the organic emission layer and includes a second electrode in contact with the connection electrode.

The gap holding means is a means for maintaining the separation distance between the first substrate and the second substrate and means for good contact between the connecting electrode and the second electrode.

The first electrode is an anode electrode and the second electrode is a cathode electrode.

According to another aspect of the present invention, an organic light emitting diode includes: a first substrate and a second substrate configured to be spaced apart from each other and to define a plurality of pixel areas; A switching element and a driving element, each pixel region of one surface of the first substrate, comprising a gate electrode, an active layer, a source electrode, and a drain electrode, the driving element comprising: a driving element having an extension extending to the pixel region; A protective film formed on the driving device and the switching device, the first contact hole exposing a drain electrode of the driving device and a second contact hole configured to randomly expose an extension of the drain electrode; and; Gap holding means formed on a protective film which does not correspond to the drain electrode extension of the driving element; A connection electrode in contact with the exposed drain electrode and the extension and formed along the gap holding means; A transparent first electrode formed on one surface of a second substrate facing the first substrate; An organic light emitting layer formed under the first electrode; A lower electrode of each of the pixel areas is formed under the organic emission layer and includes a second electrode in contact with the connection electrode.

According to a first aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method comprising: defining a plurality of pixel regions on a first substrate and a second substrate spaced apart from each other; In the step of forming a switching element and a driving element consisting of a gate electrode, an active layer, a source electrode and a drain electrode for each pixel region on one surface of the first substrate, the driving element is formed with a driving element having an extension extending to the pixel region Steps; Forming a protective layer on the driving device and the switching device, the protective layer including a first contact hole exposing a drain electrode of the driving device and a second contact hole exposing an extension of the drain electrode; Forming a gap retaining means constructed on the exposed extension; Forming a connecting electrode connected to the exposed drain electrode of the driving device along the gap-bearing means and in contact with an extension exposed to the periphery of the gap holding means; Forming a transparent first electrode on one surface of the second substrate facing the first substrate; Forming an organic emission layer under the first electrode; And forming a second electrode under the organic light emitting layer independently of each pixel area and in contact with the connection electrode.

The first electrode is an anode electrode and the second electrode is a cathode electrode.

In this case, the first electrode is formed of one selected from the group of transparent conductive compounds including indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin oxide (ITZO), and the second electrode The electrode forms at least one metal selected from metals including calcium (Ca), aluminum (Al), magnesium (Mg), and lithium (Li).

According to a second aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method comprising: defining a plurality of subpixels on a first substrate and a second substrate spaced apart from each other; In each pixel region of one surface of the first substrate, a switching element and a driving element including a gate electrode, an active layer, a source electrode, and a drain electrode are formed, wherein the driving element has a driving portion extending to the pixel region. Forming step; A protective film formed on the driving device and the switching device, the first contact hole exposing a drain electrode of the driving device and a second contact hole configured to randomly expose an extension of the drain electrode; Forming a; Forming a gap holding means on a protective film which does not correspond to the drain electrode extension of the driving element; Forming a connection electrode configured to be in contact with the exposed drain electrode and the extension and formed along the gap holding means; Forming a transparent first electrode on one surface of the second substrate facing the first substrate; Forming an organic emission layer under the first electrode; And forming a second electrode under the organic light emitting layer independently of each pixel area and in contact with the connection electrode.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

First Embodiment

According to the present invention, the thin film transistor array unit and the light emitting unit are formed on separate substrates, and the connecting electrode for applying a signal to the light emitting unit is formed in the thin film transistor array unit. The connection electrode formed along the contact portion is characterized in that it is configured to be contacted through a plurality of contacts.

4 is a cross-sectional view schematically showing the configuration of a dual plate type organic light emitting device according to the present invention.

As illustrated, the organic light emitting diode 99 according to the present invention is formed by bonding the transparent first substrate 100 and the second substrate 200 through a sealant 250.

The first and second substrates 100 and 200 are defined as a plurality of pixels P, and the thin film transistors (switching elements and driving elements) are formed on the first substrate 100 as shown in FIG. Element) T and array wiring (not shown).

One surface of the second substrate 200 facing the first substrate 100 forms a transparent first electrode 202 that is a common electrode.

The light emitting layer 210 is formed under the first electrode 202, and the second electrode 206 is independently formed for each pixel P under the light emitting layer 204.

In the above-described configuration, the light emitting layer 204 forms a hole transporting layer HTL under the first electrode, and emits a specific light for each pixel P below the hole transporting layer 204a. 204b is formed, and an electron transport layer (ETL) 204c is formed between the main light emitting layer 204b and the second electrode 206.

In the above-described configuration, after the extension part F is formed by the pixel from the drain electrode 128 of the driving element T, the gap holding means 140 having a columnar organic film pattern on the extension part F is formed. To form.

At this time, the lower drain electrode 128 is exposed to the periphery of the gap holding means 140.

Next, the connection electrode 142 is formed along the gap holding means 140 while being in contact with the drain electrode 128 and the extension part F.

The connection electrode 142 may be easily in contact with the connection electrode 142 by the gap holding means 140, and may be in contact with all of the drain electrodes 128 exposed to the periphery of the gap holding means 140. to be. The configuration of the thin film transistor array substrate having such a shape will be described below with reference to FIG. 5.

FIG. 5 is an enlarged plan view of one pixel of the thin plate transistor array substrate of the dual plate type organic light emitting device of FIG. 4.

(At this time, an amorphous thin film transistor is used as the switching element and the driving element.)

As illustrated, gate wirings (not shown in the drawing) are formed in a plurality of gate wirings spaced in parallel with each other, and are parallel to the data wirings 124 perpendicular to the gate wirings 106. Configure spaced power wiring 132.

In the above-described configuration, the region defined by the gate line 106, the data line 124 and the power line 132 perpendicular to the gate line 106 is referred to as a pixel (more specifically, a sub pixel).

The switching element T _S and the driving element T _D are formed at an intersection point of the gate line 106 and the data line 124.

The switching element T _S and the driving element T _{D are} formed of gate electrodes 102 and 104, active layers 112 and 116, a source electrode 126, and a drain electrode 128, respectively.

The gate electrode 102 of the switching element T _S is connected to the gate line 106, the source electrode 120 is connected to the data line 124, and the drain electrode 122 is connected to the driving element T _D. Is connected to the gate electrode 104.

The source electrode 126 of the driving element T _S is connected to the power wiring 132, and the drain electrode 128 has an extension part F extending to the pixel.

In this configuration, the protective layer protecting the array substrate is etched to form the first contact hole 136 and the second contact hole 138 to expose the drain electrode 128 and the extension part F, respectively.

In the above-described configuration, the gap holding means 140 is formed on the upper portion of the extension part F exposed through the second contact hole 138. The surface of the gap holding means 140 is formed. The connection electrode 142 is formed along the first contact hole 136 and contacts the drain electrode 128 and simultaneously contacts the extension portion F thereof.

As described above, since the gap holding unit 140 easily contacts the second electrode of the organic light emitting unit illustrated in FIG. 4, contact failure can be prevented, and the connection electrode 142 and the drain electrode 128 are prevented. Since the contact area can be secured to wide, the signal can continue to be output even when the connection electrode 142 is partially open, which has the advantage of preventing signal defects.

Hereinafter, the cross-sectional structure of the driving device and the switching device will be described with reference to FIG. 6.

As illustrated, gate electrodes 102 and 104 are formed in the switching unit S and the driving unit D defined on the substrate 100, respectively.

The gate insulating layer 108 is disposed on the gate electrodes 102 and 104, and the active layers 112 and 116 and the ohmic contact layers 114 and 118 are formed on the gate insulating layer 108.

The gate insulating layer 108 is configured to expose a portion of the gate electrode 104 positioned in the driving unit D.

The source electrodes 120 and 126 and the drain electrodes 122 and 128 spaced apart from each other are formed on the ohmic contact layers 114 and 118 formed on the switching unit S and the driving unit D. In this case, the switching unit S The drain electrode 122 is configured to contact the exposed gate electrode 104 of the driving unit D.

The drain electrode 128 of the driving unit D has an extension part F extending to a pixel by a predetermined area.

Thereby, a switching element can be comprised in the switching part S, and a driving element can be comprised in the drive part D. FIG.

Protective layers 132 and 134 may be formed on the entire surface of the substrate 100 on which the source and drain electrodes 120, 126, 122 and 128 are formed. ) Respectively.

The gap maintaining means 140, which is a columnar organic film pattern inclined at a predetermined angle, is formed on the exposed extension part F.

The gap holding means 140 is in contact with the exposed drain electrode 128 and the extension part F of the drain electrode 128 exposed to the periphery of the gap holding means 120 on the gap holding means 140. The connection electrode 142 is configured to be formed along the.

Hereinafter, a manufacturing process of the organic light emitting device according to the present invention having the cross-sectional configuration as described above will be described with reference to the drawings.

7A to 7F are cross-sectional views illustrating a manufacturing process of a thin film transistor array substrate for a dual plate type organic light emitting device according to the present invention, according to a process sequence.

As shown in FIG. 7A, the pixel P is defined on the substrate 100, and the switching unit S and the driving unit D are defined inside the pixel P. FIG.

Deposition and pattern one selected from the group of conductive metals including aluminum (Al) and an aluminum alloy (for example, AlNd) on the front surface of the substrate to form gate electrodes 102 and 104 on the switching unit S and the driving unit D, respectively. ).

Although not shown, gate wirings 106 of FIG. 5 are formed on one side of the pixel and connected to the gate electrode 102 formed in the switching unit S. FIG.

Next, an inorganic insulating material group including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) on the entire surface of the substrate 100 having the gate electrodes 102 and 104 formed on the switching unit S and the driving unit D, respectively. The gate insulating layer 106 is formed by depositing one selected from the group.

As shown in FIG. 7B, amorphous silicon (a-Si: H) and impurity amorphous silicon (n + a-Si: H) are sequentially deposited and patterned on the gate insulating layer 106 to form the switching unit ( The active layers 112 and 116 and the ohmic contact layers 114 and 118 which are stacked on the S and the driving unit D, respectively, are formed.

Next, a process of etching the gate insulating layer 108 is performed to form a first contact hole 110 partially exposing the gate electrode 104 of the driving unit D configured to be adjacent to the switching unit S. .

As shown in FIG. 7C, chromium (Cr), molybdenum (Mo), tungsten (W), copper (Cu), and the like are formed on the entire surface of the substrate 100 on which the active layers 112 and 116 and the ohmic contact layers 114 and 118 are formed. Deposition and pattern one selected from the group of conductive metals including titanium (Ti) and the like, and source electrodes 120 and 126 spaced apart from each other on top of the ohmic contact layers 114 and 118 positioned in the switching unit S and the driving unit D. ) And drain electrodes 122 and 128, respectively.

In this case, the drain electrode 122 of the switching unit S is formed to contact the gate electrode 104 of the driving unit D.

Although not shown, a data line (124 of FIG. 5) is formed in one direction in a direction perpendicular to the gate line (106 of FIG. 5) and connected to the source electrode 120 of the switching unit S.

As shown in FIG. 7D, a group of inorganic insulating materials including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) is formed on the entire surface of the substrate 100 on which the source and drain electrodes 120, 126, 122, 128 are formed. In some cases, the first passivation layer 130 is formed by depositing or applying one selected from a group of organic insulating materials including benzocyclobutene (BCB) and an acrylic resin.

Next, a process of exposing a part of the source electrode 126 of the driving unit D is performed.

Next, a selected one of the conductive metal groups described above is deposited and patterned on the entire surface of the substrate 100 on which the first passivation layer 130 is formed to contact the exposed source electrode 126 and the gate wiring (FIG. 5). The power line 132 extends in a direction perpendicular to the direction 106.

As shown in FIG. 7E, the second passivation layer 134 is formed by depositing or applying one of the above-described insulating material groups on the entire surface of the substrate 100 on which the power line 132 is formed.

Next, the first passivation layer and the second passivation layer 132 and 134 may be patterned to expose a portion of the drain electrode 128 positioned in the driving unit D and the extension part F extending from the drain electrode 128. The second contact hole 136 and the third contact hole 138 are formed.

As shown in FIG. 7F, benzocyclobutene (BCB) and acrylic (BBC) and acryl ( Thickly apply one selected from the group of organic insulating materials including an acryl-based resin and then pattern it to form a columnar gap holding means 140 on the extended portion F of the exposed drain electrode 128. ).

Next, the conductive metal as described above is deposited and patterned on the entire surface of the substrate 100 on which the gap holding means 140 is formed, thereby contacting the exposed drain electrode 128 and the extension part F extended thereto. While forming the connection electrode 142 formed along the gap holding means 140.

Through the above-described process it can be produced an organic light emitting device according to the present invention.

Hereinafter, the modification of the first embodiment will be described with the second embodiment.

Second Embodiment

The second embodiment of the present invention is characterized by increasing the contact area by configuring a plurality of contact portions of the connection electrode and the drain electrode.

8 is a cross-sectional view schematically showing another configuration of a thin film transistor array substrate for a dual plate type organic light emitting device according to the present invention.

As illustrated, gate electrodes 302 and 304 are formed in the switching unit S and the driving unit D defined on the substrate 300, respectively.

The gate insulating layer 308 is disposed on the gate electrodes 302 and 304, and the active layers 312 and 316 and the ohmic contact layers 314 and 318 are formed on the gate insulating layer 308.

The gate insulating layer 308 is configured to expose a portion of the gate electrode 304 positioned in the driver D.

The source electrodes 320 and 326 and the drain electrodes 322 and 328 are respectively formed on the ohmic contact layers 314 and 318 formed on the switching unit S and the driving unit D, respectively. The drain electrode 322 is configured to contact the exposed gate electrode 302 of the driving unit D.

The drain electrode 328 of the driving unit D has an extension part F extending to a pixel by a predetermined area.

Thereby, a switching element can be comprised in the switching part S, and a driving element can be comprised in the drive part D. FIG.

The passivation layers 332 and 334 may be formed on the front surface of the substrate 300 on which the source and drain electrodes 320, 326, 322 and 328 are formed. A plurality of contact holes 136 and 138 are respectively formed.

A gap maintaining means 340 is formed on the passivation layer 330 or 334 other than the exposed extension part F.

An upper portion of the gap holding means 340 is formed to be formed along the gap holding means 340 while contacting the exposed portion F exposed by the exposed drain electrode 328 and the plurality of contact holes 138. The electrode 342 is configured. In this case, the power line 332 connected to the source electrode 326 of the driving unit D is further configured.

The gap holding means of the organic light emitting diodes according to the first and second embodiments as described above serves to maintain the separation distance between the first and second substrates described in the configuration of FIG. It serves to prevent poor contact between the electrode and the second electrode of the organic light emitting unit.

In this configuration, the feature of the present invention is to widen the contact area between the drain electrode and the connecting electrode as described above.

Such a configuration is characterized in that the gap holding means is pressed by pressure during the process of bonding the first and second substrates so as not to affect the signal flow even if a partial opening occurs in the connection electrode.

The organic light emitting device according to the present invention has the following effects.

First, the organic light emitting device according to the present invention is more efficient in terms of production management because the thin film transistor array unit and the organic light emitting unit are composed of separate substrates.

Second, since the upper emission type is not affected by the shape of the lower array pattern, it is possible to secure a high resolution and an aperture ratio.

Third, since the light emitting unit is not configured on the thin film transistor array pattern but separately configured, the effect of increasing the yield on the organic light emitting layer may not be considered during the process of forming the organic light emitting layer.

Fourth, by forming a gap holding means having a predetermined height in the thin film transistor array portion, there is an effect of smoothing the contact characteristics of the driving electrode and the connecting electrode in contact with the second electrode of the light emitting portion at the same time.

Fifth, by connecting the drain electrode and the connection electrode of the driving device through a plurality of contact parts to secure a wide contact area, even if the connection electrode is partially disconnected, there is an effect that the signal can flow smoothly.

Claims (12)

A first substrate and a second substrate configured to be spaced apart from each other and to define a plurality of pixel regions; In the switching element and the driving element is configured for each pixel region of one surface of the first substrate, and composed of a gate electrode, an active layer, a source electrode and a drain electrode, The driving device includes a driving device having an extension extending into the pixel region; A protective film formed on the driving device and the switching device, the protective film including a first contact hole exposing a drain electrode of the driving device and a second contact hole exposing an extension of the drain electrode; Gap holding means configured on the exposed extension; A connection electrode connected to the exposed drain electrode of the driving element and formed along the gap-bearing means and in contact with an extension part exposed to the periphery of the gap holding means; A transparent first electrode formed on one surface of a second substrate facing the first substrate; An organic light emitting layer formed under the first electrode; A second electrode formed under the organic light emitting layer independently of each pixel area and in contact with the connection electrode; An organic light emitting device comprising a. The method of claim 1, The gap holding means is an organic light emitting device as a means for maintaining a separation distance between the first substrate and the second substrate. The method of claim 1, The first electrode is an anode electrode and the second electrode is a cathode electrode. The method of claim 3, wherein The first electrode is one selected from the group of transparent conductive compounds including indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin oxide (ITZO). The method of claim 3, wherein The second electrode is an organic light emitting device comprising at least one metal selected from among metals including calcium (Ca), aluminum (Al), magnesium (Mg), and lithium (Li). A first substrate and a second substrate configured to be spaced apart from each other and to define a plurality of pixel regions; In the switching element and the driving element is configured for each pixel region of one surface of the first substrate, and composed of a gate electrode, an active layer, a source electrode and a drain electrode, The driving device includes a driving device having an extension extending into the pixel region; A protective film formed on the driving device and the switching device, the first contact hole exposing a drain electrode of the driving device and a second contact hole configured to randomly expose an extension of the drain electrode; and; Gap holding means formed on a protective film which does not correspond to the drain electrode extension of the driving element; A connection electrode in contact with the exposed drain electrode and the extension and formed along the gap holding means; A transparent first electrode formed on one surface of a second substrate facing the first substrate; An organic light emitting layer formed under the first electrode; A second electrode formed under the organic light emitting layer independently of each pixel area and in contact with the connection electrode; An organic light emitting device comprising a. Defining a plurality of pixel regions on the first substrate and the second substrate which are spaced apart from each other; Forming a switching element and a driving element including a gate electrode, an active layer, a source electrode, and a drain electrode in each pixel area of one surface of the first substrate, The driving device includes a driving device forming step having an extension part extending to the pixel region; Forming a protective layer on the driving device and the switching device, the protective layer including a first contact hole exposing a drain electrode of the driving device and a second contact hole exposing an extension of the drain electrode; Forming a gap retaining means constructed on the exposed extension; Forming a connection electrode connected to the exposed drain electrode of the driving element along the gap-bearing means and in contact with an extension exposed to the periphery of the gap holding means; Forming a transparent first electrode on one surface of the second substrate facing the first substrate; Forming an organic emission layer under the first electrode; Forming a second electrode under the organic light emitting layer independently of each pixel area and in contact with the connection electrode; Organic electroluminescent device manufacturing method comprising a. The method of claim 7, wherein And the gap maintaining means is a means for maintaining a separation distance between the first substrate and the second substrate. The method of claim 7, wherein The first electrode is an anode electrode and the second electrode is a cathode electrode manufacturing method of an organic field. The method of claim 9, The first electrode is one selected from the group of transparent conductive compounds including indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin oxide (ITZO). . The method of claim 9, The second electrode is a method of manufacturing an organic light emitting device comprising at least one metal selected from among metals including calcium (Ca), aluminum (Al), magnesium (Mg) and lithium (Li). Defining a plurality of pixel areas on the first substrate and the second substrate, which are spaced apart from each other; In each pixel region of one surface of the first substrate, forming a switching element and a driving element comprising a gate electrode, an active layer, a source electrode, and a drain electrode; The driving device includes a driving device forming step having an extension part extending to the pixel region; A protective film formed on the driving device and the switching device, the first contact hole exposing a drain electrode of the driving device and a second contact hole configured to randomly expose an extension of the drain electrode; Forming a; Forming a gap holding means on a protective film which does not correspond to the drain electrode extension of the driving element; Forming a connection electrode configured to be in contact with the exposed drain electrode and the extension and formed along the gap holding means; Forming a transparent first electrode on one surface of the second substrate facing the first substrate; Forming an organic emission layer under the first electrode; Forming a second electrode under the organic light emitting layer independently of each pixel area and in contact with the connection electrode; Organic electroluminescent device manufacturing method comprising a.