CN109950386B - Quantum dot-based full-color light-emitting Mini or Micro LED structure and preparation method thereof - Google Patents
Quantum dot-based full-color light-emitting Mini or Micro LED structure and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the field of LEDs, in particular to a structure based on a quantum dot full-color light-emitting Mini or Micro LED and a preparation method thereof. The invention discloses a structure based on quantum dot full-color light-emitting Mini or Micro LED, which comprises a substrate, wherein three inverted blue LED chips are arranged on the substrate, and a red quantum dot film and a green quantum dot film are respectively arranged on the two blue LED chips; barrier glue or glass is arranged around the substrate, the quantum dot film and the LED chip to form a closed system; wherein the thickness of the barrier glue is 3-10 mu m.
Description
Technical Field
The invention relates to the field of LEDs, in particular to a structure based on a quantum dot full-color light-emitting Mini or Micro LED and a preparation method thereof.
Background
Quantum dots are an important low-dimensional semiconductor material, and the size of each of the three dimensions is not larger than twice the exciton bohr radius of the corresponding semiconductor material. Quantum dots are generally spherical or spheroidal, often with diameters between 2-20 nm. Common quantum dots are composed of IV, II-VI, IV-VI or III-V elements. Specific examples are silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, indium arsenide quantum dots, and the like. By applying a certain electric field or light pressure to the quantum dot material, the quantum dot material emits light with a specific frequency, and the frequency of the emitted light changes along with the change of the size of the semiconductor, so that the color of the emitted light can be controlled by adjusting the size of the nano semiconductor.
The LED is composed of a chip, a metal wire, a support, conductive adhesive, packaging materials and the like, wherein the performance of the packaging materials plays a key role in the application of LED products. The packaging material mainly plays a role in sealing and protecting the normal work of the chip, and the chip is prevented from being influenced by the humidity and the temperature in the surrounding environment; the lead is fixed and supported, so that the change of component parameters caused by damage of the electronic component due to mechanical vibration and impact is prevented; the difference between the refractive indexes of the LED chip and the air is reduced to increase the light output and effectively discharge the heat generated inside. In addition to the above functions, the encapsulating material is required to have functions of outputting an electric signal, and visible light, including electric parameters and optical parameters. Therefore, the preparation of LED packaging materials with high refractive index, high light transmission, good heat resistance, ultraviolet and solar radiation resistance, good sealing property and good caking property is the key point of research of researchers at home and abroad.
Disclosure of Invention
In order to solve the technical problem, a first aspect of the present invention provides a structure based on a quantum dot full-color light emitting Mini or Micro LED, including a substrate, three flip blue LED chips are disposed on the substrate, wherein a red quantum dot film and a green quantum dot film are disposed on two blue LED chips respectively;
barrier glue or glass is arranged around the substrate, the quantum dot film and the LED chip to form a closed system;
wherein the thickness of the barrier glue is 3-10 mu m.
As a preferred embodiment, the thickness of the barrier glue is 6 μm.
As a preferred embodiment, the red quantum dot film material and the green quantum dot film material respectively and independently comprise quantum dot powder and high-temperature protection glue.
As a preferred embodiment, the high-temperature protection glue is selected from at least one of epoxy resin, silicone resin and organic siloxane modified epoxy resin;
as a preferred embodiment, the high-temperature protective glue is an organosiloxane modified epoxy resin.
As a preferred embodiment, the barrier glue is at least one selected from acrylic resin, epoxy resin, silicone resin and organic siloxane modified epoxy resin.
As a preferred embodiment, the barrier gum is an organosiloxane modified epoxy resin.
In a preferred embodiment, the organic siloxane modified epoxy resin comprises 50 to 100 parts by weight of epoxy resin, 10 to 25 parts by weight of organic siloxane, 20 to 60 parts by weight of curing agent and 5 to 15 parts by weight of accelerator.
As a preferred embodiment, the epoxy resin is a bisphenol a epoxy resin and/or a bisphenol F epoxy resin.
The second aspect of the invention provides a preparation method of the structure of the Mini or Micro LED, which comprises the following steps:
1) attaching three inverted blue LED chips on a substrate;
2) coating a red quantum dot film material on the blue LED chip in the step 1) and curing the red quantum dot film material into a red quantum dot film;
3) coating a green quantum dot film material on the other blue LED chip in the step 1) and curing to form a green quantum dot film;
4) arranging more than one semi-finished product prepared in the step 3), and arranging barrier glue or glass around the substrate, the quantum dot film and the LED chip to form a closed system.
Has the advantages that: the Mini LED or the MicroLED is simple in structure, and the barrier adhesive is arranged around the substrate, the quantum dot film and the LED chip to protect the quantum dots, so that the device has good high-temperature and high-humidity resistance and oxidation resistance.
Drawings
Fig. 1 is a schematic structural diagram of an LED in embodiment 1 of the present invention.
Description of the symbols: 1-a substrate; 2-a blue light LED chip; 3-a red quantum dot film; 4-green quantum dot film; 5-barrier glue.
Detailed Description
In order to solve the problems, the invention provides a structure based on quantum dot full-color light-emitting Mini or micro LED, which comprises a substrate, wherein three inverted blue LED chips are arranged on the substrate, and a red quantum dot film and a green quantum dot film are respectively arranged on the two blue LED chips;
and barrier glue or glass is arranged around the substrate, the quantum dot film and the LED chip to form a closed system.
In the application, the Mini LED refers to a Mini LED with the size of 100-200 microns.
The "Micro LED" refers to a Micro LED, and refers to an LED with the size of less than 100 micrometers.
The substrate represents a pixel unit, and the proportion of the red quantum dot film and the green quantum dot film is adjusted, so that the three chips are combined to emit white light, namely, each pixel can independently generate the white light.
In a preferred embodiment, the thickness of the barrier adhesive is 3-10 μm.
Preferably, the thickness of the barrier glue is 6 μm.
As a preferred embodiment, the red quantum dot film material and the green quantum dot film material respectively and independently comprise quantum dot powder and high-temperature protection glue.
In the invention, the red quantum dot powder is a II-VI group CdSe series quantum dot material, the emission wavelength is 628nm, and the half-peak width is 35 nm; the green quantum dot powder is a II-VI group CdSe series quantum dot material, the emission wavelength is 525nm, and the half-peak width is 30 nm.
The preparation method of the red quantum dot film material or the green quantum dot film material comprises the following steps: respectively dissolving red or green quantum dot powder in a non-polar solvent, and uniformly dispersing the dissolved red and green quantum dot solutions in high-temperature protective glue water to respectively obtain a red or green quantum dot film material.
Wherein the mass fraction of the quantum dot powder is between 0.2% and 50%, preferably 25%.
The solvent is at least one selected from toluene, hexane, octane, propylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, ethylene glycol propyl ether acetate, ethylene glycol methyl ether n-propionate, ethylene glycol ethyl ether n-propionate, ethylene glycol propyl ether n-propionate, ethylene glycol methyl ether isopropanoate, ethylene glycol ethyl ether isopropanoate, ethylene glycol propyl ether isopropanoate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol methyl ether n-propionate, propylene glycol ethyl ether n-propionate, propylene glycol propyl ether n-propionate, propylene glycol methyl ether isopropanoate, propylene glycol ethyl ether isopropanoate, propylene glycol propyl ether isopropanoate, diethylene glycol methyl ether acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, dipropylene glycol methyl ether acetate, dipropylene glycol ethyl ether acetate, dipropylene glycol propyl ether acetate, dipropylene glycol butyl ether acetate, propylene glycol methyl ether acetate is preferred.
The mass fraction of the quantum dot powder is less than 0.2% or more than 50%, which may affect the brightness or the service life of the LED.
As a preferred embodiment, the high-temperature protection glue is selected from at least one of epoxy resin, silicone resin and organic siloxane modified epoxy resin;
as a preferred embodiment, the high-temperature protective glue is an organosiloxane modified epoxy resin.
As a preferred embodiment, the barrier glue is at least one selected from acrylic resin, epoxy resin, silicone resin and organic siloxane modified epoxy resin.
As a preferred embodiment, the barrier gum is an organosiloxane modified epoxy resin.
Preferably, the high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
In a preferred embodiment, the organic siloxane modified epoxy resin comprises 50 to 100 parts by weight of epoxy resin, 10 to 25 parts by weight of organic siloxane, 20 to 60 parts by weight of curing agent and 5 to 15 parts by weight of accelerator.
Preferably, the organic siloxane modified epoxy resin comprises 80 parts of epoxy resin, 12 parts of organic siloxane, 40 parts of curing agent and 8 parts of accelerator in parts by weight.
As a preferred embodiment, the epoxy resin is a bisphenol a epoxy resin and/or a bisphenol F epoxy resin.
Preferably, the epoxy resin is a bisphenol a epoxy resin.
The bisphenol a epoxy resin was purchased from fast commercial limited, guangzhou city under the model number shell 828.
The organic siloxane is selected from at least one of 4-phenylbutyltrimethoxysilane, dimethyldiethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-aminopropyltriethoxysilane, trimethoxysilane, tetramethoxysilane, phenyltrimethoxysilane and diphenyldimethoxysilane.
Preferably, the organosiloxane is a polymer of 4-phenylbutyltrimethoxysilane and dimethyldiethoxysilane.
As a preferred embodiment, the method for preparing the organosiloxane includes the steps of:
(1) adding 100mL of tetrahydrofuran, 1mol of 4-phenylbutyltrimethoxysilane and 1.5mol of dimethyldiethoxysilane into a reaction kettle, simultaneously dropwise adding 5mL of hydrochloric acid aqueous solution (the concentration of hydrochloric acid is 5mol/L), and reacting for 10 hours at 80 ℃;
(2) the tetrahydrofuran was distilled off under reduced pressure, toluene was added to dissolve the product and a quantity of sodium bicarbonate was added to a pH of 7. Vacuum filtering to remove insoluble substances, and distilling under reduced pressure to remove toluene.
In a preferred embodiment, the curing agent is an acid anhydride curing agent.
Preferably, the curing agent is methylhexahydrophthalic anhydride.
The curing agent and the epoxy resin system are subjected to chemical reaction to form a reticular three-dimensional polymer, so that the linear resin is changed into a tough body-type solid.
In the present invention, the accelerator is used to increase the reaction rate of the organosiloxane-modified epoxy resin system.
In a preferred embodiment, the accelerator is at least one selected from the group consisting of fatty amine accelerators, acid anhydride accelerators, and polyether amine accelerators.
Examples of the aliphatic amine accelerator include 2,4, 6-tris (dimethylaminomethyl) phenol, N, N-dimethylbenzylamine, and triethanolamine.
Examples of the acid anhydride-based accelerator include phthalic anhydride and tetrahydrophthalic anhydride.
Examples of the polyetheramine accelerator include 2,4, 6-tris (dimethylaminomethyl) phenol and the like.
As a preferred embodiment, the accelerator is triethanolamine.
The accelerator and the curing agent are mutually cooperated to accelerate the curing speed of the resin.
In the process of curing the organic silicon modified epoxy resin, on one hand, part of benzene rings migrate to the surface of the glue to form a protective layer; on the other hand, Si-OH bonds in the molecules migrate towards the direction of the base material to form strong acting force with the base material, so that the adhesive force between glue and the base plate is improved. The applicant has unexpectedly found that when the organosilicon is 1/8-1/3 parts by weight of the epoxy resin, the thermal stability of the LED is further improved, possibly due to: the special structure formed by Si-O-Si, Si-O-C and benzene ring in the organic silicon modified epoxy resin and the synergistic effect of glue make the high-temperature protective glue and the barrier glue quickly dissipate the heat generated by the LED lamp, and reduce the damage of the heat to the internal structure of the quantum dot film layer material.
When the weight ratio of the organic siloxane to the epoxy resin is less than 1/8 or more than 1/3, the adhesive force between the glue and the base material is weak, and the quantum dot film is easily damaged by water vapor and the like; or a stable network structure cannot be formed or a formed three-dimensional network cross-linking structure is compact, so that heat dissipation is affected.
The second aspect of the invention provides a preparation method of the structure of the Mini or Micro LED, which comprises the following steps:
1) attaching three inverted blue LED chips on a substrate;
2) coating a red quantum dot film material on the blue LED chip in the step 1) and curing the red quantum dot film material into a red quantum dot film;
3) coating a green quantum dot film material on the other blue LED chip in the step 1) and curing to form a green quantum dot film;
4) arranging more than one semi-finished product prepared in the step 3), and arranging barrier glue or glass around the substrate, the quantum dot film and the LED chip to form a closed system.
As a preferred embodiment, the method for preparing the Mini or Micro LED structure comprises the following steps:
1) attaching three inverted blue LED chips on a substrate;
2) coating a red quantum dot film material on the blue LED chip in the step 1), and curing at 150-200 ℃ for 60-240 min to form a red quantum dot film;
3) coating a green quantum dot film material on the other blue light LED chip in the step 1), and curing at 150-200 ℃ for 60-240 min to obtain a green quantum dot film;
4) arranging more than one semi-finished product prepared in the step 3), arranging barrier glue around the substrate, the quantum dot film and the LED chip to form a closed system, and curing at 150-200 ℃ for 60-240 min to obtain the LED quantum dot film.
The present invention will be specifically described below by way of examples. It should be noted that the following examples are only for illustrating the present invention and should not be construed as limiting the scope of the present invention, and that the insubstantial modifications and adaptations of the present invention by those skilled in the art based on the above disclosure are still within the scope of the present invention.
In addition, the starting materials used are all commercially available, unless otherwise specified.
Examples
Example 1
As shown in fig. 1. A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 3 μm.
The red quantum dot film material comprises red quantum dot powder and high-temperature protection glue.
The green quantum dot film material comprises green quantum dot powder and high-temperature protection glue.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The organic siloxane modified epoxy resin comprises 50 parts of epoxy resin, 10 parts of organic siloxane, 20 parts of curing agent and 5 parts of accelerator in parts by weight.
The epoxy resin is bisphenol A epoxy resin, and the model is shell 828.
The preparation method of the organic siloxane comprises the following steps:
(1) adding 100mL of tetrahydrofuran, 1mol of 4-phenylbutyltrimethoxysilane and 1.5mol of dimethyldiethoxysilane into a reaction kettle, simultaneously dropwise adding 5mL of hydrochloric acid aqueous solution (the concentration of hydrochloric acid is 5mol/L), and reacting for 10 hours at 80 ℃;
(2) the tetrahydrofuran was distilled off under reduced pressure, toluene was added to dissolve the product and a quantity of sodium bicarbonate was added to a pH of 7. Vacuum filtering to remove insoluble substances, and distilling under reduced pressure to remove toluene.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the red quantum dot film material comprises the following steps: dissolving 0.5g of red quantum dot powder in 100mL of propylene glycol methyl ether acetate solvent, and then uniformly dispersing the dissolved red quantum dot solution in high-temperature protective glue to obtain the red quantum dot film material. The mass fraction of the red quantum dot powder is 25%.
The preparation method of the green quantum dot film material comprises the following steps: dissolving 0.6g of green quantum dot powder in 100mL of propylene glycol methyl ether acetate solvent, and uniformly dispersing the dissolved green quantum dot solution in high-temperature protective glue to obtain the green quantum dot film material. The mass fraction of the green quantum dot powder is 25%.
The preparation method of the structure of the Mini or Micro LED comprises the following steps:
1) attaching three inverted blue LED chips on a substrate;
2) coating a red quantum dot film material on the blue LED chip in the step 1), and curing at 150 ℃ for 240min to form a red quantum dot film;
3) coating a green quantum dot film material on the other blue light LED chip in the step 1), and curing at 150 ℃ for 240min to form a green quantum dot film;
4) arranging the two semi-finished products prepared in the step 3), arranging barrier glue around the substrate, the quantum dot film and the LED chip to form a closed system, and curing at 180 ℃ for 150min to obtain the LED quantum dot film.
Example 2
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 10 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The organic siloxane modified epoxy resin comprises 50 parts of epoxy resin, 10 parts of organic siloxane, 20 parts of curing agent and 5 parts of accelerator in parts by weight.
The epoxy resin is bisphenol A epoxy resin, and the model is shell 828.
The preparation method of the organic siloxane comprises the following steps:
(1) adding 100mL of tetrahydrofuran, 1mol of 4-phenylbutyltrimethoxysilane and 1.5mol of dimethyldiethoxysilane into a reaction kettle, simultaneously dropwise adding 5mL of hydrochloric acid aqueous solution (the concentration of hydrochloric acid is 5mol/L), and reacting for 10 hours at 80 ℃;
(2) the tetrahydrofuran was distilled off under reduced pressure, toluene was added to dissolve the product and a quantity of sodium bicarbonate was added to a pH of 7. Vacuum filtering to remove insoluble substances, and distilling under reduced pressure to remove toluene.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Example 3
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 6 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The organic siloxane modified epoxy resin comprises 50 parts of epoxy resin, 10 parts of organic siloxane, 20 parts of curing agent and 5 parts of accelerator in parts by weight.
The epoxy resin is bisphenol A epoxy resin, and the model is shell 828.
The preparation method of the organic siloxane comprises the following steps:
(1) adding 100mL of tetrahydrofuran, 1mol of 4-phenylbutyltrimethoxysilane and 1.5mol of dimethyldiethoxysilane into a reaction kettle, simultaneously dropwise adding 5mL of hydrochloric acid aqueous solution (the concentration of hydrochloric acid is 5mol/L), and reacting for 10 hours at 80 ℃;
(2) the tetrahydrofuran was distilled off under reduced pressure, toluene was added to dissolve the product and a quantity of sodium bicarbonate was added to a pH of 7. Vacuum filtering to remove insoluble substances, and distilling under reduced pressure to remove toluene.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Example 4
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 6 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The organic siloxane modified epoxy resin comprises 100 parts of epoxy resin, 25 parts of organic siloxane, 60 parts of curing agent and 15 parts of accelerator in parts by weight.
The epoxy resin is bisphenol A epoxy resin, and the model is shell 828.
The preparation method of the organic siloxane comprises the following steps:
(1) adding 100mL of tetrahydrofuran, 1mol of 4-phenylbutyltrimethoxysilane and 1.5mol of dimethyldiethoxysilane into a reaction kettle, simultaneously dropwise adding 5mL of hydrochloric acid aqueous solution (the concentration of hydrochloric acid is 5mol/L), and reacting for 10 hours at 80 ℃;
(2) the tetrahydrofuran was distilled off under reduced pressure, toluene was added to dissolve the product and a quantity of sodium bicarbonate was added to a pH of 7. Vacuum filtering to remove insoluble substances, and distilling under reduced pressure to remove toluene.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Example 5
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 6 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The organic siloxane modified epoxy resin comprises 80 parts of epoxy resin, 12 parts of organic siloxane, 40 parts of curing agent and 8 parts of accelerator by weight.
The epoxy resin is bisphenol A epoxy resin, and the model is shell 828.
The preparation method of the organic siloxane comprises the following steps:
(1) adding 100mL of tetrahydrofuran, 1mol of 4-phenylbutyltrimethoxysilane and 1.5mol of dimethyldiethoxysilane into a reaction kettle, simultaneously dropwise adding 5mL of hydrochloric acid aqueous solution (the concentration of hydrochloric acid is 5mol/L), and reacting for 10 hours at 80 ℃;
(2) the tetrahydrofuran was distilled off under reduced pressure, toluene was added to dissolve the product and a quantity of sodium bicarbonate was added to a pH of 7. Vacuum filtering to remove insoluble substances, and distilling under reduced pressure to remove toluene.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Example 6
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 6 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive is organic siloxane modified epoxy resin, and the specific components and the weight parts are the same as those in example 5.
The blocking glue is epoxy resin and comprises 90 parts of epoxy resin, 40 parts of curing agent and 8 parts of accelerator.
The epoxy resin is bisphenol A epoxy resin, and the model is shell 828.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The specific steps of the preparation method of the Mini or Micro LED structure are the same as those of the embodiment 1, and the difference is that the curing at 180 ℃ for 150min in the step (4) is replaced by the curing at 150 ℃ for 60 min.
Example 7
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 15 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin, and the specific components and the weight parts are the same as those in example 5.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Example 8
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 6 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The organic siloxane modified epoxy resin comprises 80 parts of epoxy resin, 5 parts of organic siloxane, 40 parts of curing agent and 8 parts of accelerator by weight.
The epoxy resin is bisphenol A epoxy resin, and the model is shell 828.
The preparation method of the organic siloxane has the same specific steps as example 1.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Example 9
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 6 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The organic siloxane modified epoxy resin comprises 80 parts of epoxy resin, 35 parts of organic siloxane, 40 parts of curing agent and 8 parts of accelerator in parts by weight.
The epoxy resin is bisphenol A epoxy resin, and the model is shell 828.
The preparation method of the organic siloxane has the same specific steps as example 1.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Example 10
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 6 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The specific components of the organosiloxane-modified epoxy resin were the same as in example 5, except that the organosiloxane was 4-phenylbutyltrimethoxysilane.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Example 11
A structure based on quantum dot full-color light-emitting Mini or Micro LED comprises a substrate 1, wherein three inverted blue LED chips 2 are arranged on the substrate 1, and a red quantum dot film 3 and a green quantum dot film 4 are respectively arranged on two blue LED chips; after the 2 substrates are arranged, barrier glue 5 is arranged around the substrate 1, the red quantum dot film 3, the green quantum dot film 4 and the LED chip to form a closed system.
The thickness of the barrier glue 5 is 6 μm.
The specific components and preparation methods of the red quantum dot film material and the green quantum dot film material are the same as those in example 1.
The high-temperature protective adhesive and the barrier adhesive are both organic siloxane modified epoxy resin.
The specific composition of the organosiloxane-modified epoxy resin was the same as in example 5, except that the organosiloxane was dimethyldiethoxysilane.
The curing agent is methylhexahydrophthalic anhydride.
The accelerant is triethanolamine.
The preparation method of the Mini or Micro LED structure comprises the specific steps of example 1.
Performance testing
And (3) permeability test: the Mini or Micro LEDs described in the examples were subjected to a red ink test, immersed in 50% red ink, boiled for 8 hours, and then observed with a microscope for penetration of the red ink, and the permeation resistance rating was evaluated according to the penetration of the red ink.
The tangle-solidup is that the red ink is totally not permeated into the LED, and the tangle-up solidup solid.
Weather resistance test: and (3) placing the LED finished product into a high-pressure reaction kettle, controlling the pressure at 2atm and the temperature at 120 ℃, testing for 48 hours, and performing light attenuation test.
Light attenuation (initial luminous flux-rear luminous flux) × 100%/initial luminous flux
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in other forms, and any person skilled in the art may modify or change the technical content disclosed above into an equivalent embodiment with equivalent changes, but all those simple modifications, equivalent changes and modifications made on the above embodiment according to the technical spirit of the present invention still belong to the protection scope of the present invention.
Claims (2)
1. A structure based on quantum dot full-color light-emitting Mini or Micro LED is characterized by comprising a substrate, wherein three inverted blue LED chips are arranged on the substrate, and a red quantum dot film and a green quantum dot film are respectively arranged on the two blue LED chips;
barrier glue is arranged around the substrate, the quantum dot film and the LED chip;
wherein the thickness of the barrier glue is 6 μm,
the red quantum dot film material and the green quantum dot film material respectively and independently comprise quantum dot powder and high-temperature protection glue; the red quantum dot powder is a II-VI group CdSe series quantum dot material, the emission wavelength is 628nm, and the half-peak width is 35 nm; the green quantum dot powder is a II-VI group CdSe series quantum dot material, the emission wavelength is 525nm, and the half-peak width is 30 nm; the preparation method of the red quantum dot film material or the green quantum dot film material comprises the following steps: respectively dissolving red or green quantum dot powder in a non-polar solvent, and uniformly dispersing the dissolved red and green quantum dot solutions in high-temperature protective glue to respectively obtain red or green quantum dot film materials; the mass fraction of the quantum dot powder is 25%; the high-temperature protection glue and the barrier glue are both organic siloxane modified epoxy resin;
the organic siloxane modified epoxy resin comprises 80 parts of epoxy resin, 12 parts of organic siloxane, 40 parts of curing agent and 8 parts of accelerator by weight,
the organic siloxane is a polymer of 4-phenylbutyltrimethoxysilane and dimethyldiethoxysilane,
the epoxy resin is bisphenol A epoxy resin;
the preparation method of the organic siloxane comprises the following steps:
(1) adding 100mL of tetrahydrofuran, 1mol of 4-phenylbutyltrimethoxysilane and 1.5mol of dimethyldiethoxysilane into a reaction kettle, simultaneously dropwise adding 5mL of hydrochloric acid aqueous solution, wherein the concentration of hydrochloric acid is 5mol/L, and reacting for 10 hours at 80 ℃;
(2) distilling under reduced pressure to remove tetrahydrofuran, adding toluene to dissolve the product, adding a certain amount of sodium bicarbonate until the pH is 7, vacuum filtering to remove insoluble substances, and distilling under reduced pressure to remove toluene to obtain the final product.
2. The method of fabricating a Mini or Micro LED structure according to claim 1, comprising the steps of:
1) attaching three inverted blue LED chips on a substrate;
2) coating a red quantum dot film material on the blue LED chip in the step 1) and curing the red quantum dot film material into a red quantum dot film;
3) coating a green quantum dot film material on the other blue LED chip in the step 1) and curing to form a green quantum dot film;
4) arranging more than one semi-finished product prepared in the step 3), and arranging barrier glue around the substrate, the quantum dot film and the LED chip to obtain the LED chip.
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| CN104091860A (en) * | 2014-07-01 | 2014-10-08 | 东莞市万丰纳米材料有限公司 | LED packaging light source and manufacturing process thereof |
| CN106356386A (en) * | 2016-09-30 | 2017-01-25 | 福州大学 | Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device |
| CN106374028A (en) * | 2016-08-31 | 2017-02-01 | 张家港康得新光电材料有限公司 | Quantum dot film and preparation method therefor |
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| CN104091860A (en) * | 2014-07-01 | 2014-10-08 | 东莞市万丰纳米材料有限公司 | LED packaging light source and manufacturing process thereof |
| CN106374028A (en) * | 2016-08-31 | 2017-02-01 | 张家港康得新光电材料有限公司 | Quantum dot film and preparation method therefor |
| CN106356386A (en) * | 2016-09-30 | 2017-01-25 | 福州大学 | Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device |
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