CN106867259A - It is applied to silicon composition and its application of semiconductor packages - Google Patents

It is applied to silicon composition and its application of semiconductor packages Download PDF

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Publication number
CN106867259A
CN106867259A CN201710112327.1A CN201710112327A CN106867259A CN 106867259 A CN106867259 A CN 106867259A CN 201710112327 A CN201710112327 A CN 201710112327A CN 106867259 A CN106867259 A CN 106867259A
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composition
silicon composition
fluorescence
semiconductor
silicone resin
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张汝志
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Florian Photoelectric Materials (suzhou) Co Ltd
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Florian Photoelectric Materials (suzhou) Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend

Abstract

The invention discloses a kind of silicon composition for being applied to semiconductor packages, it is included：Silicone based rubber, the silicone resin containing vinyl-functional, the silicone resin of the functional groups of H containing Si, hydrosilylation catalysts, fluorescent material and solvent or diluent etc..The invention also discloses the purposes of the silicon composition, for example, silicon composition can be applied to and film is formed on base material；Under heating and/or irradiation, except the solvent in striping and/or precuring composition, formation can be uncovered and surface tack free pre-cured film；Pre-cured film is attached on article；Finally it is fully cured pre-cured film, realizes the encapsulation to article.Silicon composition of the invention has application method simple; bonding force is strong; calking excellent performance; long service life; the advantages of good stability; the fluorescent material of high content can be cooperateed with to use and prevent the sedimentation of fluorescent material, it is adaptable to the chip size of semiconductor devices, the protection of wafer-level packaging and object and bonding etc..

Description

It is applied to silicon composition and its application of semiconductor packages
Technical field
Half is applied to the present invention relates to a kind of encapsulating material that can be applied to semiconductor packages field, particularly one kind The silicon composition of conductor encapsulation and its application, for example encapsulation wafer scale WLP LED, encapsulation chip size CSP LED, Application in the semiconductor devices such as LED filament lamp, etc..
Background technology
LED (semiconductor light-emitting-diode) is widely used in because having the advantages that low energy consumption, long-life, small size The fields such as illumination, backlight.And packaging process is a very important operation in LED processing procedures, its workability for LED Energy, cost etc. have the influence of highly significant.
Conventional LED package technique is substantially device level technique, and its is relatively costly, and is difficult to high-density packages.With mesh Before as a example by a kind of LED component packaging technology for commonly using, LED chip is that the inverse bonding being adhered on the transition substrate of a flattening is brilliant Piece, the transition substrate includes the metallic circuit for being electrically connected between LED and the transition substrate.Then, the transition substrate with The LED chip being bonded together is connected to fin.And, including the lead supported by plastic casing LED packagings Silicon transition substrate is adhered to so as to realize electrical connection by routing.Then a pre-fabricated lens (sealant) cover LED core Piece, circuit and transition substrate.Whole packaging is finally installed to support plate (the such as PCB for being distributed into horizontal electrical signal and being radiated Plate) on, its operation is very numerous and diverse, and encapsulating structure is also extremely complex, relatively costly.
Thus, industry has also been proposed wafer scale LED encapsulation (WLP) technologies, to effective reduces cost.Further say, The most obvious mode for reducing LED manufacturing costs is to increase wafer size, processes element as much as possible simultaneously with this.This is also The reason wafer stage chip encapsulation technologies that wafer-level package mode why is avoided using wafer-level packaging are to full wafer wafer The technology for obtaining single finished product chip device is cut again after being packaged test, and the device size after encapsulation is consistent with nude film.Through Device size after crystal wafer chip dimension encapsulation technology has reached and has been highly miniaturized, and device cost is with the reduction of chip size With the increase of wafer size and significant reduction.
Wafer current level encapsulation technology mainly has wafer scale optical lens (wafer level optics), wafer scale reflection Layer coating (wafer level coating of reflective layer), wafer scale fluorescent material cladding (wafer level Phosphor coating), wafer-wafer bonding (wafer to wafer bonding) etc., but it deposits in different aspect In some defects.For example, for wafer scale fluorescent material coating technology, if being related to positive cartridge chip (wire bond chips), Then：To realize that lead is difficult using standard wafer manufacturing technology and existing silica gel packaging material, thus result in related system Journey can only coordinate specific silica gel and implement；Silica gel generally requires solidification at high temperature (more than 150C)；Solidification silicon containing fluorescent material Glued membrane is difficult to etch, for example, chloro (CF4Deng) plasma etching efficiency is very low, and wet etching is also very poorly efficient.If relating to And flip-chip (flip chips), then：Its still non-master Flow Technique；Fluorescent material need to be related to deposit and encapsulation process, according to CVD The technology such as (chemical vapor deposition), PECVD (plasma enhanced chemical vapor deposition), ALD (ald), equipment is very It is expensive；According to spin coating technique, then waste of material is extremely more, and there are problems that inhomogenous；According to spray technique, then in the presence of equal One sex chromosome mosaicism, while also needing to consider the problem in terms of fluidics；Other dispensing technology (dispensing) etc. is not suitable for crystalline substance Circle level encapsulation.
In recent years, as LED constantly improves in the research of the aspects such as device material, chip technology, encapsulation procedure technology, especially It is the gradually ripe variation with fluorescent material paint-on technique of flip chip, a kind of new Chip Size Package CSP (Chip Scale Package) technology arises at the historic moment.Because the luminous flux of its cellar area maximizes (high light intensity) and chip and envelope Dress BOM costs high specific (low packaging cost), makes it be expected to open subversive breach on lm/ $.In the recent period, CSP is in the industry cycle Cause larger words, it is both one kind of numerous packing forms, also expresses expectation by industry, it is considered to be a kind of " ultimate " encapsulation Form, but this technology still has some problems to have to be solved, for example, how to realize high efficiency coating, the even application of fluorescent material, At present all there is low surface covered, low production efficiency or fluorescent powder coated uneven etc. in the spraying coating process that uses or Shooting Technique Problem.
Still further aspect, current white-light illuminating LED component generally uses embedding packaging technology technology (Encapsulation), will be noted by dispensing (Dispensing) after fluorescent material mixes according to a certain percentage with organic silica gel Enter to have completed to be completed on the support of die bond and gold thread binding the fluorescent material coating on LED chip surface.This processing procedure is due to technique letter Singly, production cost is relatively low and production efficiency is high, and is widely used by industry.But in this traditional handicraft, the thickness of phosphor powder layer Degree and distributing position are difficult to precisely controlled, and this light-emitting uniformity to finished product LED causes great harmful effect.With this Meanwhile, after fluorescent material too high levels in the mixture (such as more than 40wt%), fluorescent material precipitation in the mixture day It is beneficial obvious, it is difficult to control the uniformity of batch, thus be also not suitable for gluing process.
The content of the invention
It is a primary object of the present invention to provide a kind of silicon composition for being applied to semiconductor packages, it has and uses Method is simple, and bonding force is strong, gap filling (gap filing) excellent performance, long service life, the advantages of good stability, can cooperate with The fluorescent material of high content is used, and can effectively prevent the sedimentation of fluorescent material, so as to reach fluorescent material in overlay It is uniformly distributed, is adapted for semiconductor devices, particularly wafer level semiconductor device and other items is well packaged.
To realize aforementioned invention purpose, a kind of semiconductor packages that is applied to provided in the embodiment of the invention Silicon composition is included：
Number-average molecular weight is higher than 3 × 104The silicone based rubber of g/mol,
Silicone resin containing vinyl-functional,
Silicone resin containing Si-H functional groups,
Hydrosilylation catalysts,
Also, the silicon composition is homogeneous phase solution shape system.
Further, the silicon composition can also be included：Coordinate to each component with the silicon composition And form the solvent or diluent of homogeneous phase solution.
Further, the silicon composition for being applied to semiconductor packages can also include LED fluorescent material, with Realize white light LEDs.
Meanwhile, the purposes of the silicon composition is additionally provided among an embodiment of the invention, for example, half Application in the encapsulation of conductor device, particularly wafer level semiconductor device.
Postscript, additionally provides the application process of the silicon composition among an embodiment of the invention.
For example, a kind of method for packing, it includes：
Article to be packaged is provided,
Described silicon composition is applied on the article to be packaged, and by radiating and/or being heating and curing And realize the encapsulation of the article.
Again for example, a kind of method for packing, it includes：
1) described silicon composition is applied in the first base material and forms film,
2) remove the organic solvent in the film, formation can completely be uncovered from the first base material and surface tack free it is pre- Cured film,
3) pre-cured film is covered into the first base material, the second base material the surface of any one or is arranged at pre-cured film Between the first base material and the second base material, and apply pressure to pre-cured film, pre-cured film is attached to the first base material or the On two base materials or by the first base material and the second substrate bonding,
4) pre-cured film is fully cured under radiation and/or heating condition, realizes to the first base material and/or the second base material Encapsulation.
Additionally, additionally providing a kind of device among an embodiment of the invention, it includes and is formed by the method for packing Encapsulating structure.
Technical scheme is more specifically illustrated with reference to embodiments, but not as to the present invention Restriction.
Brief description of the drawings
Fig. 1 is a kind of process chart of method for packing in an exemplary embodiments of the invention；
Fig. 2 is the test photo of fluorescent material settling velocity in the embodiment of the present invention 1 and the composition of reference examples 1；
Fig. 3 is to realize film forming when CSP LED are encapsulated with silicon composition in one embodiment of the invention in encapsulation LED Photo.
Fig. 4 is a kind of detection figure of the photochromic uniformity of phosphor laminate in one embodiment of the invention.
Fig. 5~Fig. 6 is a kind of testing result figure of the photochromic uniformity of phosphor laminate in one embodiment of the invention.
Fig. 7 a- Fig. 7 f are the structural representations of some semiconductor light-emitting apparatus in some embodiments of the invention.
Fig. 8 is a kind of structural representation of double-deck glued membrane in one embodiment of the invention.
Specific embodiment
The method for packing that it is implemented the invention provides silicon composition and nationality, with the realization of simple and fast for partly leading Body device, particularly wafer level semiconductor device is well packaged.The silicon composition not only itself have desirable physical, Chemical property, including but not limited to good fluidity, application method are simple, long service life, good stability etc., and are formed by it Encapsulating structure be also respectively provided with desirable physical, chemical property, including but not limited to high transmission rate, high rigidity, high-gas resistance water preventing ability Can wait, particularly suitable for encapsulation solid luminous device, such as semiconductor light-emitting apparatus, such as LED light device, particularly wafer scale LED light device.
The main component of silicon composition provided in an embodiment of the present invention is that number-average molecular weight is higher than 3 × 104G/mol's Silicone based rubber, the silicone resin containing vinyl-functional, the silicone resin containing Si-H functional groups, hydrosilylation is urged Agent, and, the organic solvent or diluent of homogeneous phase solution are formed to each component with the silicon composition coordinates.
In the present invention, the silicone based rubber (also known as silicone rubber) contains vinyl-functional, it is preferred that the silicon Contain more than 2 vinyl in each molecule of oxyalkyl rubber, it is furthermore preferred that the silicone based rubber function containing phenyl Group, it is further preferred that containing more than 1 phenyl in each molecule of the silicone based rubber.
Silicone rubber of the invention be it is a kind of on main polymer chain using diorganosiloxane units as repeating segment Rubber, wherein by following formula-﹛ Si (R1)(R2)-O-- ﹜ represent diorganosiloxane units, wherein R1And R2It is individually univalent Organic group, or particularly alkyl, such as methyl, ethyl；Aryl, such as phenyl；Alkenyl, such as vinyl；Cyanoalkyl, Such as γ-cyanogen propyl group；Or fluoroalkyl, such as trifluoro propyl.
Silicone rubber of the invention can be obtained by suitable pathways known in the art, including self-control or from market approach Obtain.For example, see EP 0470745A2,《Glossary of Chemical Terms》(Van Nostr and Reinhold Company, 1976), JP2005288916, DE102004050128.9, US5279890A, JP 330084/ 1998th, the document such as JP19981124, JP332821/1998, CN1212265A,
More specifically, silicone rubber of the invention can be selected from polydimethylsiloxane rubber, methyl phenyl siloxane Rubber, methyl vinyl silicone rubber, alkyl methyl siloxane rubber, the cyanoalkyl siloxanes rubber of fluorination etc., but also not It is limited to this.
In the present invention, the R in diorganosiloxane units1And/or R2Preferred vinyl, phenyl.
In the silicon composition, the content that silicone rubber accounts for non-solvent component can be 1wt%~90wt%, Preferably 10wt%~70wt%, especially preferably 20wt%~50wt%.
Ideal, the content of silicone rubber medium vinyl of the invention is the gross weight of silicone rubber More than 0.01%, less than 70%.
More preferably, the content of phenyl is the 0.01% of the gross weight of silicone rubber in silicone rubber of the invention More than, less than 95%.
Preferably, the number-average molecular weight of the silicone based rubber is 3 × 104G/mol~1 × 108G/mol, more preferably It is 1 × 105G/mol~1 × 107G/mol, especially preferably 3 × 105G/mol~1 × 106g/mol。
In the present invention, more than 2 vinyl are contained in each molecule of the silicone resin containing vinyl-functional, Preferably, the silicone resin containing vinyl-functional includes straight chain, side chain or network structure, it is preferred that described containing second The number-average molecular weight (Mn) of the silicone resin of alkenyl-functional groups is 105Below g/mol, preferably 1 × 102G/mol~1 × 105G/mol, more preferably 1 × 102G/mol~1 × 104g/mol。
It is furthermore preferred that containing more than 1 phenyl in each molecule of the silicone resin containing vinyl-functional.
In some embodiments, the described silicone resin containing vinyl-functional includes RSiO3/2Unit, RR' SiO2/2Unit, RR'R " SiO1/2Unit and SiO4/2The combination of any one or more in unit, wherein R, R', R " is substitution Or unsubstituted univalence hydrocarbyl.
In some embodiments, the described silicone resin containing Si-H functional groups includes RSiO3/2Unit, RR' SiO2/2Unit, RR'R " SiO1/2Unit and SiO4/2The combination of any one or more in unit, wherein R, R', R " is substitution Or unsubstituted univalence hydrocarbyl.
More specifically, in certain embodiments, the structure of the silicone resin containing vinyl-functional is as follows：
In some embodiments, the silicone resin containing vinyl-functional can be (R1[OR2]SiO)m- (R3CH2=CH-SiO) n, wherein R1、R2、R3Vinyl can be, m, n can be 0 or a positive integer.
In some embodiments, the silicone resin containing vinyl-functional can be selected from and contain vinyl POSS。
In the silicon composition, the content that the silicone resin containing vinyl-functional accounts for non-solvent component can be with It is 1wt%~90wt%, preferably 10wt%~70wt%, especially preferably 20wt%~50wt%.
In the present invention, more than 2 Si-H bases are contained in each molecule of the silicone resin containing Si-H functional groups, Preferably, the silicone resin containing Si-H functional groups includes straight chain, side chain or network structure；Preferably, it is described containing Si-H The number-average molecular weight of the silicone resin of functional group is less than 105G/mol, preferably 102G/mol~105G/mol, more preferably 1×10 2G/mol~1 × 104g/mol。
It is furthermore preferred that containing more than 1 phenyl in each molecule of the silicone resin containing Si-H functional groups.
In the present invention in the silicone resin containing Si-H functional groups, in addition to the hydrogen atom with silicon bonding with silicon bonding Group can be the optionally substituted monovalent hydrocarbon in addition to alkenyl, for example methyl, ethyl, propyl group or similar alkyl；Benzene Base, tolyl, xylyl, naphthyl or similar aryl；Benzyl, phenethyl or similar aralkyl；3- chloropropyls, 3,3, 3- trifluoro propyls or similar haloalkyl, but it is preferable that have at least one aryl in a molecule of the component, particularly Phenyl, especially two or more phenyl.The molecular structure of the component does not have special limitation, and it can have straight chain, branched Or straight chain, ring-type or dendritic molecular structure that part is branched.It is described containing Si-H functional groups in some case study on implementation Silicone resin can be represented by following material：By formula (CH3)2HSiO1/2And C6H5SiO3/2Unit composition organic poly- silica Alkane resin；By formula (CH3)2HSiO1/2、(CH3)3SiO1/2With formula C6H5SiO3/2Unit composition organopolysiloxane resins；By Formula (CH3)2HSiO1/2And SiO4/2Unit composition organopolysiloxane resins；By formula (CH3)2HSiO1/2、(CH3)2SiO2/2 And SiO4/2Unit composition organopolysiloxane resins, etc..
More specifically, in certain embodiments, the structure of the silicone resin containing Si-H functional groups is as follows：
Wherein, p is the integer more than or equal to 1.
In some embodiments, the silicone resin containing Si-H functional groups also may be selected from containing Si-H functional groups POSS。
In the silicon composition, the content of the silicone resin containing Si-H functional groups is 1wt%~90wt%, excellent Elect 2wt%~50wt%, especially preferably 5wt%~30wt% as.
Further, in the present invention, the content of Si-H bases exists in the silicone resin containing Si-H functional groups 0.1mol%~100mol%, preferably in 0.2mol%~95mol%, particularly preferably in 0.5mol%~90mol%.
Further, in the present invention, in the silicone resin containing Si-H functional groups Si-H bases with described containing ethene The mol ratio of vinyl is 0.02~50 in the silicone resin of base functional group：1, preferably 0.1~10：1, particularly preferably exist 0.5~5：1.
Further, selection and preparation technology on this silicone resin containing Si-H functional groups are referred to CN101151328A, CN102464887A etc..
Further, in the present invention silicone resin (silicone resin, functional group containing Si-H containing vinyl-functional Silicone resin) be that a class dissolves in the such as liquid hydrocarbon of benzene,toluene,xylene, heptane and analog, ketone, fat, photoresist With solvent or dissolve in the liquid organosilicon of such as low viscous ring-type polydiorganosiloxanepolyurea and straight chain polydiorganosiloxanepolyurea Compound, it may include by R3 3SiO1/2Simple function (M) unit of representative, R3 2SiO2/2Difunctionality (D) unit of representative, R3SiO3/2Trifunctional (T) unit of representative and by SiO4/2Tetrafunctional (Q) unit of representative.R3The organic group of unit price is represented, its It is substituted or unsubstituted univalence hydrocarbyl.Wherein, the univalent unsubstituted alkyl may be selected from but be not limited to following group：Alkane Base, such as methyl, ethyl, propyl group, amyl group, octyl group, undecyl and octadecyl；Alkenyl, such as vinyl, pi-allyl, Cyclobutenyl, pentenyl and hexenyl；Alicyclic group, such as cyclohexyl and cyclohexenylethyl；Alkynyl, such as acetenyl, third Alkynyl and butynyl；Cycloalkyl such as cyclopenta and cyclohexyl；And, aromatic group, such as Ethylbenzyl, naphthyl, phenyl, first Phenyl, xylyl, benzyl, styryl, 1- phenethyls and 2- phenethyls, are optionally phenyl.May be present in R3On it is non- Active substituent includes but is not limited to halogen and cyano group.As substitution alkyl monovalent organic groups may be selected from but be not limited to Lower group：Halogenated alkyl, such as chloromethyl, 3- chloropropyls and 3,3,3- trifluoro propyls, methyl fluoride, 2- fluoropropyls, 3,3,3- trifluoros Propyl group, 4,4,4- triRuorobutyls, 4,4,4,3,3- five fluorine butyl, 5,5,5,4,4,3,3- seven fluorine amyl groups, 6,6,6,5,5,4,4, 3,3- nine fluorine hexyls and 8,8,8,7,7- five fluorine octyl groups etc..Preferably, univalent unsubstituted hydrocarbon in silicone resin of the invention Base is vinyl, and more than 2 phenyl are contained in each molecule of particularly described silicone resin.On siloxanes in the present invention The selection of resin and preparation technology refer to US6,124,407, US2,676,182, US4,774,310, US6,124,407 etc..
In the present invention, the consumption of hydrosilylation catalysts should be enough to promote the solidification of silicon composition of the present invention.This A little hydrosilylation catalysts are as known in the art and are commercially available, for example, may be selected from but be not limited to following thing Matter：Platinum group metal：Platinum, rhodium, ruthenium, palladium, osmium or iridium metals or its organo-metallic compound and combinations thereof.More specifically, it can With selected from platinum black, compound such as chloroplatinic acid, the product of chloroplatinic acid hexahydrate and monohydric alcohol, double (ethyl second Acid) platinum, double (acetopyruvic acid) platinum, platinous chloride and the compound and alkene or low-molecular-weight organopolysiloxane or The compound of the platinum compounds of microencapsulation in matrix or core-shell type structure.Platinum is compound with the organopolysiloxane of low-molecular-weight Thing, including 1,3- divinyl -1 with platinum, 1,3,3- tetramethyl disiloxane compound.These compounds can be in resin base Microencapsulation in matter.Alternatively, catalyst may include 1,3- divinyl -1 with platinum, and 1,3,3- tetramethyl disiloxane is combined Thing.These hydrosilylation catalysts refer to CN1863875A (0020-0021 sections of specification), US 3,159,601, US3,220,972, US3,296,291, No. US3,419,593, US3,516,946, US3,814,730, US3,989,668, US4,784,879, US5,036,117, No. US5,175,325, EP 0 347 895B, US4,766,176, US5,017,654 etc. Document.And/or, at least one UV active Pt catalysts refer to US8,314,200.
In some case study on implementation, based on the weight of silicon composition of the present invention, the amount of hydrosilylation catalysts can Think following range of platinum group metal：0.1ppm is optionally 1ppm to 1000ppm, and be optionally to 1,0000ppm 10ppm to 100ppm.
In the present invention, foregoing solvent can be applicable any types, for example the mixing of water, organic solvent or both Thing, preferably is selected from organic solvent, for example, may be selected from but be not limited to n-hexane, toluene, chloroform, dichloromethane, ethanol, acetone, 2- fourths Ketone, 4-methyl-2 pentanone, fat, photoresist solvent (such as PGME, PGMEA) etc., to said composition in remaining material It is combined as the liquid with good fluidity, particularly homogeneous phase solution.
In the silicon composition, the content of the solvent can be about 10wt%~90wt%, preferably 20wt%~80wt%, especially preferably 30wt%~70wt%, particularly described solvent boiling point at ambient pressure be 60 DEG C~ 250℃。
In the silicon composition, the content of the diluent can be about 10wt%~90wt%, preferably 20wt%~80wt%, especially preferably 30wt%~70wt%.
In some embodiments, the diluent includes at least one response type diluent, it is preferred that the response type Diluent use can participate in the monovinyl compound of hydrosilylation, the compound containing Si-H functional group or Contain a monovinyl compound for Si-H functional groups.Especially preferred, the response type diluent may be selected from mono-vinyl Silane compound and/or monoallyl silane compound.Preferably, diluent viscosity at room temperature is less than 100cPs, Particularly preferably less than 50cPs, particularly preferably less than 10cPs..By using foregoing response type diluent, can avoid organic molten The use of agent, reduces environmental pollution, and the compatibility that can also lift each component in the silicon composition.
More specifically, the monovinyl compound for being adapted as foregoing diluent may be referred to US6, the texts such as 333,375B Offer.One or more aromatic vinyl compound is for example may be selected from, it is typical such as styrene, AMS, 2- methylbenzenes Ethene, methyl styrene, methyl styrene, 4- diisopropyls styrene, dimethyl styrene, 4- t-butyl styrenes, 5-t- The methyl styrene of butyl -2, chlorobenzene, styrene and styrene list fluorine chlorine etc..Especially preferably using styrene etc..
Postscript, the polymerized monomer intramolecular of foregoing monovinyl compound can also have hetero atom comprising at least one Polar group, for example can be the vinyl monomer comprising amido, the vinyl monomer comprising hydroxyl, wrap oxygen containing vinyl Monomer, especially preferably the above two.These have containing heteroatomic polar group vinyl monomer can individually or combine make With.
Further, the foregoing vinyl monomer comprising amido is polymerizable monomer, at least one of its molecule amine Base is primary amine (such as acrylamide, Methacrylamide, p-aminophenyl, aminomethyl (methyl) acrylic-amino ethyl (methyl) Acrylic-amino propyl group (methyl) acrylic-amino (methyl) butyl acrylate), secondary amine (for example see JP130355/86A, Mono-substituted (methyl) acrylamide of such as aniiinophenyl butadiene such as N- methyl (methyl) acrylamide, N- ethyls (methyl) Acrylamide, N hydroxymethyl acrylamide, N- (4- aniiinophenyls) Methacrylamide) or tertiary amine (the substitution ammonia of such as N, N- bis- Base alkyl acrylate, N, N- dialkylaminoalkyl acrylamides, N, the dibasic amino aromatic ethenyl compounds of N- With the pyridine compounds containing vinyl), especially preferably tertiary amine.More specifically, comprising acrylic or methacrylic acid group N, N- disubstituted amido alkyl acrylates may be selected from N, N- dimethylaminomethyls (methyl) acrylic acid, N, N- dimethylaminos Base ethyl (methyl) acrylic acid, N, N- dimethylaminopropyls (methyl) acrylic acid, N, N- dimethrlaminobutyls (methyl) third Olefin(e) acid, N, N- diethylaminos ethyl (methyl) acrylic acid, N, N- diethyl amino propyls (methyl) acrylic acid, N, N- diethyl Aminobutyl (methyl) acrylic acid, N- methyl-N-ethylaminos ethyl (methyl) acrylic acid, N, N- dipropylamino ethyl (first Base) acrylic acid, N, N- Dibutylaminoethyls (methyl) acrylic acid, N, N- dibutylaminos propyl group (methyl) acrylic acid, N, N- Dibutylamino butyl (methyl) acrylic acid, N, N- dihexyls amino-ethyl (methyl) acrylic acid, N, N- dioctylamino ethyls (methyl) acrylic acid and acryloyl morpholine (acryloylmorpholine).Wherein, N, N- bis- (methyl) acrylic acid, N, N- bis- (methyl) acrylic acid, N, N- dipropylaminos ethyl (methyl) acrylic acid, N, N- dioctylaminos ethyl (methyl) acrylic acid and N- methyl-N-ethylaminos ethyl ester (methyl) acrylate is particularly preferably.Again for example, foregoing N, N- disubstituted amido aromatic ethylene Based compound can include styrene derivative, such as N, N- dimethylamino ethyl styrenes, N, N- diethylamino ethyls Styrene, N, N- dipropylaminos ethyl styrene and N, N- dioctylamino ethyl styrene.Again for example, the pyrrole containing vinyl Acridine compound can include vinylpyridine, 4-vinylpridine, 5- methyl -2- vinylpyridines, 5- ethyl -2- vinylpyridines Pyridine, especially preferably the above two.
Further, the vinyl monomer of foregoing hydroxyl can be comprising at least one primary hydroxyl, secondary hydroxyl or tert-hydroxyl Polymerizable monomer.The vinyl monomer of these hydroxyls includes such as unsaturated carboxylic acid monomer containing hydroxyl, hydroxyl Vinyl ether monomers and hydroxyl vinyl ketone monomer, the preferably unsaturated carboxylic acid monomer of hydroxyl.Hydroxyl is not Derivative (such as ester, the acyl of the example of unsaturated carboxylic monomer including acrylic acid, methacrylic acid, itaconic acid, fumaric acid and maleic acid Amine, acid anhydrides).Wherein, acrylic acid and methyl acrylic ester compound be particularly preferably.More specifically, the vinyl of hydroxyl Monomer can include methylol (methyl) acrylic acid, hydroxy propyl methacrylate (methyl), (methyl) acrylic acid hydroxypropyl (first Base) acrylic acid, (methyl) acrylic acid -2- hydroxypropyls, 3- phenoxy group -2- hydroxypropyl (methyl) glycerol acrylate (methyl) propylene Acid butyl ester (methyl) acrylic acid, chloro- 3- hydroxypropyls (methyl) acrylic acid of 2-, hydroxyl hexyl (methyl) acrylate, hydroxyl octyl group (first Base) acrylic acid, methylol (methyl) acrylamide, 2- hydroxypropyls (methyl) acrylamide, (methyl) acrylamide, hydroxypropyl two (ethylene glycol) itaconic acid, itaconic acid two (propane diols), double (2- hydroxypropyls) double (2- ethoxys) itaconic acids, itaconic acid, double (2- hydroxyls Base ethyl) ester, double maleic acids (2- ethoxys), methyl vinyl ether, methylol ketenes and allyl alcohol.Wherein, methylol (first Base) hydroxy-ethyl acrylate, (methyl) hydroxypropyl acrylate, (methyl) acrylic acid, acrylic acid hydroxypropyl (methyl), 3- phenoxy groups- 2- hydroxypropyls (methyl) glycerol acrylate (methyl) butyl acrylate (methyl) acrylic acid (methyl) acrylic acid hydroxyl hexyl, hydroxyl Propyl group (methyl) acrylic acid, methylol (methyl) acrylamide, 2- hydroxypropyls (methyl) acrylamide and hydroxypropyl (methyl) third Acrylamide is first-selected.
Further, foregoing oxygen-containing vinyl monomer may include the vinyl monomer containing alkoxy (refering to JP188356/ 95A), such as trimethoxyvinyl silane, Triethoxyvinylsilane, 6- methoxy silanes base -1,2- hexenes, to trimethoxy First silicon ring-alkylated styrenes, 3- trimethoxy silicon propyl ester and 3- triethoxysilyl propyl acrylates, etc..
Among some embodiments, described silicon composition can also include additive, such as inhibitor, small molecule Epoxy/acrylic acid/poly- the ammonia of silane (can be with or without ethene or Si-H functional groups), adhesion promoters, heat or UV solidifications The resins such as ester/BMI, inorganic filler, rheology modifier, tackifier, wetting agent, defoamer, levelling agent, dyestuff With any one in fluorescent material antisettling agent (such as SHIN-ETSU HANTOTAI DM-30, Sanwell SH series LEDs fluorescent material anti-settling agent etc.) or two Plant the combination of the above.
Wherein, the inhibitor, i.e. hydrosilylation inhibitor refer to that can result in the bad thing of hydrosilylation Matter, with reference to CN1863875A (the 0025th section) etc., it may be selected from alkynol compound, alkene-alkine compounds, siloxanes or benzo three Azoles and other hydrosilanes reaction suppressors.For example, alkynol compound inhibitor may be selected from 2- phenyl -3- butyne-2-alcohols, 2- Methyl -3- butyne-2-alcohols, 3,5- dimethyl -1- hexin -3- alcohol etc.；Alkene-alkine compounds may be selected from such as 3- methyl -3- amylenes - 1- alkynes etc., siloxanes may be selected from 1,3,5,7- tetramethyl -1, and 3,5,7- tetra- hexenyl cyclotetrasiloxanes, 1,3,5,7- tetramethyls - 1,3,5,7- tetravinyl cyclotetrasiloxanes etc..Wherein preferred alkynol compound, particularly preferred 2- phenyl -3- butyne-2-alcohols.
Wherein, tackifier or adhesive accelerant can be selected from tetraethyl orthosilicate, vinyltrimethoxy silane, the positive fourth of boric acid Ester, boric acid isopropyl ester, isooctyl acid titanium, zirconium iso-octoate, tetrabutyl titanate, isopropyl titanate, KH-171, KH-560 and KH-570 etc. (the 0026th section of reference CN1863875A specifications etc.), the adhesive accelerant that commercially available approach can be obtained can be Dow Corning Corporation The JCR6101 of product, JCR6101UP, EG6301, OE6336, JCR6175, JCR6109, Hipec4939, Hipec1-9224, OE6250, SR7010, SE9207, SE1740, SE9187L etc., but not limited to this.
Wherein, inorganic filler can be as known in the art and be commercially available, for example, may include inorganic Filler such as silica, for example, colloidal silica, pyrogenic silica, silica flour, titanium oxide, glass, aluminum oxide, oxygen Change zinc, or its combination, filler there can be 50 nanometers or smaller of average grain diameter and will not reduce printing opacity hundred by scattering or absorbing Divide rate.
And on such as rheology modifier, wetting agent, defoamer, levelling agent, dyestuff etc., its definition is that industry is noted, And can freely be chosen from the respective material that industry is commonly used.
Silicon composition of the invention can be prepared by any conventional method, such as in suitable temperature, such as room The lower mixing all the components of temperature.
The viscosity of the silicon composition be 1,000mPa.s~500,000mPa.s, preferably 5,000mPa.s~ 100,000mPa.s, especially preferably 7,000mPa.s~50,000mPa.s.Because of its good fluidity, can by syringe, The conventional equipments such as pump, printer and some select locations for accurately injecting or being coated on device, and easily realized using it Bonding, packaging technology.In addition, also making the silicon composition in use, showing good gap filling capacity (gap filling property)。
The hardness that thing is fully cured of the silicon composition is shore hardness 20~shore hardnesses of A D 100, preferably It is shore hardness 60~shore hardnesses of A D 90, especially preferably 80~shore hardnesses of shore hardness A D 80.
The silicon composition is fully cured thing for visible ray, and the light transmittance of such as light of wavelength about 450nm is 50%~100%, preferably 70%~100%, especially preferably 80%~100%.
In addition, the thing that is fully cured of the silicon composition also shows good bonding force and pliability, and dielectric The performance such as constant, heat transfer efficiency, anti-aging is also ideal.
Thus, by the silicon composition, can also make between device or device with it is extraneous can keep it is good every From, including physics and chemical isolation, and/or device is kept good light output or intake efficiency.
Compared to the film product for being applied to semiconductor packages at present, silicon composition of the invention also have comprising but not It is limited to the advantage being listed below, including：Still there is long service life (to become without significant viscosity more than 8h at room temperature Change), more preferable blind performance, simplify the encapsulation flow of semiconductor devices (such as LED) and improve yield, and, storage is steady Qualitative more (at 0-5 DEG C, more than 1 month, preferably 3 months, more preferably 6 months) is good.
Silicon composition of the invention makes in use, can also be cooperateed with the fluorescent material such as fluorescent material, fluorescence quantum With, for example, aforementioned fluorescent material can be mixed the silicon composition, then to packaged articles.In the process, this case Inventor is also found surprisingly that very much, silicon composition of the invention can pole significantly reduce and even eliminate fluorescent material, The sedimentation that particularly fluorescent material is produced with the time, for example, when all kinds of fluorescent materials and the present composition of commonly using industry After mixing, at room temperature, there is no a precipitation status more than 8h, preferably more than 24h, more preferably more than 1 week, thus can produce The packaging effect that life is more uniformly distributed, improves Luminescence Uniformity of light emitting semiconductor device class etc..
Therefore, the embodiment of the present invention additionally provides a kind of fluorescence encapsulating composition, and it is included：
The described silicon composition for being applied to semiconductor packages；
And, be dispersed in the fluorescent material in the silicon composition, the fluorescent material include fluorescent material and/ Or fluorescence quantum.
Further, in the fluorescence encapsulating composition fluorescent material account for the content of non-solvent component for 0.01wt%~ 90wt%, preferably 1wt%~80wt%, more preferably 3wt%~70wt%.
Further, the colour temperature of the fluorescent material is 1800K-16000K, and colour rendering index is 60~100.
Further, the particle diameter of the fluorescent material is 1.0~10000nm, it is preferred that the fluorescent material includes rare-earth fluorescent Powder, rare-earth garnet fluorescent material, sulfurized alkaline earth metal gallate, alkaline earth sulfide, vulcanization zinc-type, alkaline-earth metal aluminic acid Salt, phosphate, borate, silicate, fluorine arsenate, fluogermanate, rare-earth sulfide, rare earth oxide, vanadate, nitride Any one two or more combination in fluorescent material, especially preferred, the fluorescent material is rare earth doped YAG yttrium aluminium Garnet phosphor powder or the YAG yttrium aluminium garnet fluorescent powders of Ce doping.
Further, the particle diameter of the fluorescence quantum is 1.0~20nm, it is preferred that the composition of the fluorescence quantum Material includes II-VI group or iii-v element, and particularly preferably, the material of the fluorescence quantum includes ZnSe, CdS, CdSe With any one the two or more combination in CdSe, it is further preferred that the material of the fluorescence quantum be selected from gallium arsenic, Indium phosphide or gallium nitride, still more preferably, the fluorescence quantum has core shell structure, still more preferably, described Fluorescence quantum is CdSe/ZnS nuclear shell structure quantum points.
Further, in the fluorescence encapsulating composition fluorescent material account for the content preferably 1.0wt% of non-solvent component~ 90wt%, more preferably 1.0wt%~70wt%.
Further, in the fluorescence encapsulating composition fluorescence quantum account for non-solvent component content be preferably 0.01~ 50wt%, more preferably 0.01~5.0wt%.
The embodiment of the present invention additionally provides the silicon composition or the fluorescence encapsulating composition in semiconductor packages In application, including：Wafer-level packaging (WLP), chip size packages (CSP), LED filament encapsulation etc..
For example, provide a kind of semiconductor packages material among some embodiments, it includes described organic Silicon composition and/or its different degrees of solidfied material and/or the fluorescence encapsulating composition and/or its different degrees of solidification Thing.
For example, a class film or coating are provided among some embodiments, mainly by described silicon composition Or described fluorescence encapsulating composition semi-solid preparation or solidify to form, preferably it is solidify to form by described fluorescence encapsulating composition.
Further, the condition of the semi-solid preparation includes：Heating ventilation condition, temperature conditionss are 20 DEG C~200 DEG C, preferably It it is 80 DEG C~120 DEG C, the time is 10~100000s, preferably 10~8000s.
Wherein, the film can be in semi-cured state, its than the silicon composition existed with flow morphology, When as encapsulating material application, with it is more convenient, quick, inexpensive the features such as, be particularly suited for partly being led to large-sized Body luminescent device, such as wafer level semiconductor luminescent device is packaged.
Further, the condition of the solidification includes：The silicon composition or institute are made by heating or electromagnetic irradiation Fluorescence encapsulating composition is stated to be fully cured.
Accordingly, be bonded in article present invention also offers the silicon composition or the fluorescence encapsulating composition, Prepare the application in article face coat or semiconductor packages.
For example, providing a group semiconductor light emitting device among some embodiments, it includes：Semiconductor light emitting core Piece, and, described film or coating；And the semiconductor luminous chip and the film or coating interval setting.
Inventor has found, when film or coating that utilization is formed by the fluorescence encapsulating composition, can be in thickness In the case of very thin (such as 10 μm~10000 μm or so can be reached, preferably at 20~500 μm or so), still provide efficient It is light conversion efficiency, luminous uniform, and can effectively lift the service life of the semiconductor luminous chip.
More typical, the embodiment of the present invention additionally provides a kind of method for packing, and it includes：
Article to be packaged is provided,
Described silicon composition or described fluorescence encapsulating composition are applied on the article to be packaged, and The encapsulation of the article is realized by radiating and/or being heating and curing.
More typical, the embodiment of the present invention additionally provides a kind of adhering method, and it includes：
Apply foregoing any between the first article and/or the second article surface and/or the first article and the second article Plant silicon composition,
The solvent in the silicon composition is removed, and makes the silicon composition semi-solid preparation, formed in solid phase Precuring thing；
The precuring thing is fully cured by heating or electromagnetic irradiation, gluing for the first article and the second article is realized Connect.
Fig. 1 is referred to, a kind of method for packing provided among some embodiments includes：
S1：Masking, by aforementioned organic silicon composition or fluorescence encapsulating composition by solution film forming, curtain coating coating, silk screen/ The mode film forming such as steel mesh printing, rotary coating, (vacuum) film extrusion；
S2：Primary solidification, forms the pre-cured film that surface is not glued and can be uncovered；
S3：Pad pasting, pre-cured film is covered on the substrate of application, by high temperature and/or apply pressure make film with (substrate or article can have microstructure, such as printed wire or electricity for substrate and/or the bonding of another article above film Pole)；
S4：Solidification, the substrate that will be pasted with film is placed in constant temperature (heating.Elevated temperature) it is solid in environment Change；
S5：Solidification post processing, for example, be cut into smaller unit by the product after solidification.
Further, among some more preferred embodiment, a kind of method for packing includes：
1) described silicon composition or described fluorescence encapsulating composition are applied in the first base material and form film,
2) remove the organic solvent in the film, formation can completely be uncovered from the first base material and surface tack free it is pre- Cured film,
3) pre-cured film is covered to the first base material or the second substrate surface, and applies pressure to pre-cured film, made pre- solid Change film to be attached on the first base material or the second base material,
4) pre-cured film is fully cured under radiation and/or heating condition, realizes to the first base material or the second base material Encapsulation；
5) post-processing step.
Wherein, step 1) include：At least from any one in film forming device and mode of printing by the silicon composition Or described fluorescence encapsulating composition is applied in the first base material and forms film.
Among an optional embodiment, step 2) include：In the film being removed in radiation and/or under heating ventilation condition Organic solvent, so as to form the pre-cured film.The heating-up temperature for wherein using can be 20~200 DEG C, preferably 80~ 120 DEG C, the heat time is 10~100000 seconds, preferably 10~8000 seconds.
Among one more preferred embodiment, step 3) include：During pressure is applied to pre-cured film, also At least pre-cured film is heated, pre-cured film is bonded on the first base material or the second base material.Wherein apply Pressure size can be 0.001Pa~10000Pa, preferably 0.1Pa~1000Pa, apply pressure time be 0.001~ 100000 seconds, preferably 0.1~100 second.The heating-up temperature for wherein using can be 0~260 DEG C, preferably 50~200 DEG C, especially It is preferably 80~150 DEG C, and the time is preferably 10~100000 seconds.
Certainly, in step 3) in, it would however also be possible to employ other manner substitutes the heat treatment to pre-cured film, or cooperates with foregoing Mode of heating is processed pre-cured film, these modes can include irradiation (such as far infrared, ultraviolet, visible ray, microwave, Any one or several in electron beam), its medium wavelength can be 10-8~103M, the time can be 10~100000 seconds.
Foregoing the first base material can be object with bright and clean flat surface or other there is setting two dimension, three-dimensional structure Mould etc., for example can be specular aluminium, can also be wafer, such as sapphire wafer, or wafer level semiconductor device etc..
The second foregoing base material is object to be packaged, its can include semiconductor devices, such as semiconductor photoelectric device, Such as photovoltaic cell, light emitting semiconductor device, such as LED (light emitting diode), LD (laser) etc., particularly wafer scale half Conductor device, such as wafer scale LED component.
The embodiment of the present invention additionally provides the encapsulating structure of a group semiconductor light emitting device, and it is mainly by described semiconductor Device encapsulating material is constituted with light emitting semiconductor device；And the encapsulation cavity body body subtended angle of the encapsulating structure is more than 90 °, excellent More than 100 ° are selected in, preferably more than 120 °.Wherein, when encapsulation cavity body body subtended angle (flare angel) becomes big, light extraction Rate increases.Subtended angle is bigger, and from cavity during outgoing, the order of reflection in cavity is reduced light, and energy loss is also greatly decreased, goes out Light rate is improved.
In some embodiments, a kind of method for packing or article security method that the present invention is provided include：
1) foregoing any one silicon composition or any one foregoing fluorescence encapsulating composition are applied to the first base Film is formed on material,
2) remove the organic solvent in the film, formation can completely be uncovered from the first base material and surface tack free it is pre- Cured film,
3) pre-cured film is covered into the first base material, the second base material the surface of any one or is arranged at pre-cured film Between the first base material and the second base material, and apply pressure to pre-cured film, pre-cured film is attached to the first base material or the On two base materials or by the first base material and the second substrate bonding,
4) pre-cured film is fully cured under radiation and/or heating condition, realizes to the first base material and/or the second base material Encapsulation or form protective layer in the first base material and/or the second substrate surface.
In the present invention, described " encapsulation " (packaging) should be understood to comprise at least following connotation, e.g., pass through Two or more article is bonded (adhesive) by the silicon composition, or, by the silicon composition in article The some regions on surface solidify to form protective layer (coating), or, the local immersion of one or more articles is had by described Machine silicon composition formed solidfied material in, or, by one or more articles integrally embed sealing (encapsulation) in by In the solidfied material that the silicon composition is formed, certainly, the functions such as foregoing bonding, coating, sealing also can be simultaneously realized.
For example, in some embodiments, can be by foregoing any one silicon composition or fluorescence encapsulating composition Be coated on base material by the mode such as silk screen or steel mesh typography, under heating and/or irradiation, remove solvent therein and/ Or precuring composition, form coating, then heated and/or irradiated lower solidification, formed protective layer or reach with it is another The bonding of article.
These embodiments include secondary solidification process, wherein solidification is changed into solid not from liquid mixture for the first time Fluid (includes but are not limited to coating, film etc.)；Second solidification is further crosslinked composition so that and bonded object () can be bonded to each other.
Accordingly, a kind of device is additionally provided among an embodiment of the invention, it is included by the method for packing shape Into encapsulating structure.
Further, the encapsulating structure is main by described silicon composition or described fluorescence encapsulating composition Solidfied material and the article composition encapsulated by the solidfied material.
Wherein, packed article includes semiconductor devices, such as such as semiconductor photoelectric device, photogenerator Part, such as LED, particularly wafer scale LED component.
A group semiconductor light emitting device is additionally provided in some case study on implementation of the invention, comprising semiconductor light emitting core Piece, is covered with more than one layer glued membrane on the exiting surface of the semiconductor luminous chip, one layer of glued membrane of wherein at least is phosphor gel Film, the phosphor laminate is formed by any one foregoing fluorescence encapsulating composition.Preferably, the phosphor laminate has Trapezoid cross section, it is preferred that the inverted trapezoidal section is isosceles trapezoid；Preferably, the semiconductor luminous chip goes out with five The exiting surface of the semiconductor luminous chip is completely covered smooth surface, described phosphor laminate；Preferably, the fluorescent material An at least organosilicon glued membrane is also covered with glued membrane.Described organosilicon glued membrane can be by the foregoing silicon composition of the present invention Formed, it is also possible to which other silicone composition for encapsulating commonly used by industry are formed.Some of aforesaid semiconductor light-emitting device are shown Example property structure see Fig. 7 a- Fig. 7 f, wherein Fig. 7 a, Fig. 7 c, the structure type shown in Fig. 7 f even more preferably, it has preferably Light-emitting uniformity.
Technical scheme is made specifically below in conjunction with some more specifically embodiments and corresponding comparative example Explanation.But still it is emphasized that these embodiments are not to be construed as constituting any limitation to protection scope of the present invention. Postscript, except as otherwise noted, all numbers, percentage, ratio otherwise in description of the invention etc. are by weight.
Involved silicon composition may be referred to the wide variety of organic silica gel of current industry in the following example The group mode of mixture is prepared, for example, its component is divided into component A (mainly comprising the silica containing vinyl-functional Alkane resin, platinum catalyst, additive etc.) and component B it is ((main comprising silicone resin, official containing Si-H containing vinyl-functional Silicone resin, additive that can be rolled into a ball etc.), two components are mixed by a certain percentage when in use, it is subsequently adding corresponding content Fluorescent material or phosphor combination.
Silicon composition mixing involved in the following example and/or film forming flow are as follows：In the organosilicon The fluorescent material or phosphor combination of corresponding content are added in composition, mixture is inverted on flat board or PET film, use film forming Device (such as one side preparing device of Shanghai Pu Shen chemical machineries Co., Ltd) is made certain thickness film, in heating platform by the One-step solidification acquirement is not flowed, strippable glued membrane (free-standing).
Silicon composition involved by embodiment 1 embodiment is higher than 3 × 10 comprising number-average molecular weight5The second of g/mol Alkenyl siloxane base rubber (component 1, SG6066, vinyl-dimethyl base silane base end-blocking methyl vinyl silicone rubber, Vinyldimethylsilyl terminated Methyl Vinyl Silicone Gum, Power Chemicals Ltd, Number-average molecular weight 450,000-600,000g/mol, contents of ethylene about 0.90-1.10wt%), the silicon containing vinyl-functional Oxygen alkane resin (component 2, A05-01-A, Florey photoelectric material (Suzhou) Co., Ltd), the siloxanes tree containing Si-H functional groups Fat (component 3, A05-01-B, Florey photoelectric material (Suzhou) Co., Ltd), hydrosilylation catalysts (component 4, SIP6832.2, Gelest), the basic components such as solvent, and can also include other helper components, refer to table 1 below.
The composition of the silicon composition involved by reference examples 1 reference examples refers to table 2 below.
Characterize and test：Further, inventor also by the way of industry is commonly seen to having involved by embodiment 1 Performance change situation in room temperature environment of silicon composition involved by machine silicon composition and reference examples 1, solidification situation with And condensate performance, investigated respectively including light transmittance, hardness etc., as a result such as table 3 below.
And, also to fluorescent material in the involved composition of the embodiment of the present invention 1 and reference examples 1 (two kinds of compositions With 10：1 mass ratio is mixed into commercially available yellow fluorescent powder SDY558-15 (Yantai Shield Advanced Materials Co., Ltd.), mixing Stood after uniform) sinking speed be tested, the results detailed in table 4 below and Fig. 2.
It can be seen that, embodiment of the present invention composition viscosity is not high, but with certain thixotropy, therefore fluorescence can be kept Powder is not precipitated.
The encapsulation performance to embodiment 1 and the involved silicon composition of reference examples 1 is tested again.In an embodiment In, the test technology of use includes：
Step 1) masking：To respectively be had using film applicator (such as 1mm film applicators) or mode of printing, particularly screen printing mode Machine silicon composition is coated to film forming on substrate；
Step 2) primary solidification：100 DEG C of (heating platform in fume hood) 20min；
Step 3) pad pasting：The bonding way for using is monolithic pad pasting, and cured film is 25mm* with substrate (glass) bond area 25mm, plus load is 1.5kg, and the plus load time is 10s；
Step 4) solidification：180 DEG C of (constant temperature convection oven) 2h.
Step 5) detect and cut, as a result such as table 5 below.
Silicon composition involved by embodiment 2 embodiment is higher than 3 × 10 comprising number-average molecular weight5The second of g/mol Alkenyl siloxane base rubber (SG6066, vinyl-dimethyl base silane base end-blocking methyl vinyl silicone rubber, Vinyldimethylsilyl terminated Methyl Vinyl Silicone Gum, Power Chemicals Ltd, Number-average molecular weight about 450,000-600,000g/mol, contents of ethylene about 0.90-1.10wt%) 4g, containing vinyl-functional Silicone resin (A05-01-A, Florey photoelectric material (Suzhou) Co., Ltd) 12.8g, ethenylmethoxy siloxanes it is equal Polymers (Vinylmethoxysiloxane Homopolymer VMM-010, Gelest) 0.35g, the silica containing Si-H functional groups Alkane resin (A05-01-B, Florey photoelectric material (Suzhou) Co., Ltd) 6.8g, hydrosilylation catalysts (SIP6832.2, Gelest) 20ppm, solvent 4- methyl -2 pentanone 20g, yellow fluorescent powder SDY558-15from Yantai Anthony Heald new material are limited Company 35.5g.Above component is obtained into the mixing that a fluorescence powder content is 60wt% through double planetary mixer after well mixed Thing.
The composition of the silicon composition involved by reference examples 2 reference examples:Index of refraction is about 1.53 LED organosilicons envelope Dress glue OE-6650 components A (DOW CORNING, it is main comprising silicone resin, platinum catalysis containing phenyl and vinyl-functional Agent, additive etc.) 5.0g and component B is ((mainly comprising the silicone resin containing phenyl and vinyl-functional, containing phenyl and Si- Silicone resin, additive of H functional groups etc.) 5.0g, yellow fluorescent powder SDY558-15 (the Yantai limited public affairs of Anthony Heald new material Department) 15.0g.Above component is obtained into the mixing that a fluorescence powder content is 60wt% through double planetary mixer after well mixed Thing.
Silicone resin (A05-01-A, Florey photoelectric material (Suzhou) limited public affairs of the reference examples 3 containing vinyl-functional Department) 5.0g, the silicone resin (A05-01-B, Florey photoelectric material (Suzhou) Co., Ltd) containing Si-H functional groups, 5.0g, (Yantai Anthony Heald is new for hydrosilylation catalysts (SIP6832.2, Gelest) 10ppm, yellow fluorescent powder SDY558-15 Materials Co., Ltd) 15.0g.Obtaining a fluorescence powder content after above component is well mixed through double planetary mixer is The mixture of 60wt%.
Characterize and test：Further, embodiment 2, reference examples 2 and reference examples 3 are passed through into film forming device (about 400 μm of gaps) Masking, characterizes and test result such as table 6 below and table 7 on a pet film.Adhesion is detected：The glued membrane of precuring is cut into 25mm* 25mm sizes, fit glued membrane on glass after the cleaning, and the substrate for being fitted with glued membrane makes glass in about 110 DEG C of 2min of heating platform Glass substrate is warmed up to 110 DEG C with glued membrane, and two sheet glass are had into glued membrane part, and cross is fitted two-by-two, and about 1.5kg weights are pressed in into glass Glass cross sample upper 10 second, the sample after laminating is transferred to 180 DEG C, and 2h solidifies again, then detects the adhesion under compact model.
Silicon composition involved by embodiment 3 embodiment is higher than 3 × 10 comprising number-average molecular weight5The second of g/mol Alkenyl siloxane base rubber (SG6066, vinyl-dimethyl base silane base end-blocking methyl vinyl silicone rubber, Vinyldimethylsilyl terminated Methyl Vinyl Silicone Gum, Power Chemicals Ltd, Number-average molecular weight about 450,000-600,000g/mol, contents of ethylene about 0.90-1.10wt%) 1.8g, containing vinyl functional Silicone resin (A05-01-A, Florey photoelectric material (Suzhou) Co., Ltd) 4.6g, the ethenylmethoxy siloxanes of group Homopolymers (Vinylmethoxysiloxane Homopolymer, VMM-010, Gelest) 0.35g, the silicon containing Si-H functional groups Oxygen alkane resin (A05-01-B, Florey photoelectric material (Suzhou) Co., Ltd) 4.6g, hydrosilylation catalysts Pentanone 9.0g, 0.34g yellow fluorescent powder SDY558-15,20.1g are green for (SIP6832.2, Gelest) 10ppm, solvent 4- methyl -2 Color fluorescent material SDG530H, 1.2g red fluorescence powder SSDR630Q-2 (being purchased from Yantai Shield Advanced Materials Co., Ltd.).Will be with Upper component obtains the mixture that a fluorescence powder content is 66.8wt% through double planetary mixer after well mixed.
Silicon composition involved by embodiment 4 embodiment is higher than 3 × 10 comprising number-average molecular weight5The first of g/mol Base phenyl vinyl silicone based rubber (Methyl Phenyl Vinyl Silicone Rubber, Florey photoelectric material (Suzhou) Co., Ltd, number-average molecular weight about 500,000g/mol, phenyl content about 30wt%, contents of ethylene about 0.35- 0.40wt%) 3.7g, silicone resin (H20-01-A, Florey photoelectric material (Suzhou) containing phenyl and vinyl-functional Co., Ltd) 7.7g, (H20-01-B, Florey photoelectric material (Suzhou) has the silicone resin containing phenyl and Si-H functional groups Limit company) 7.7g, hydrosilylation catalysts (SIP6832.2, Gelest) 10ppm, the pentanone 1.2g of solvent 4- methyl -2, 0.48g yellow fluorescent powder SDY558-15,14.3g green emitting phosphor SDG530H, 0.86g red fluorescence powders SSDR630Q-2 is ( Purchased from Yantai Shield Advanced Materials Co., Ltd.).A fluorescence is obtained after above component is well mixed through double planetary mixer Powder content is the mixture of 44.9wt%.
Characterize and test：Further, embodiment 3 is passed through into film forming device (400 μm of gaps) masking on a pet film, will be real Apply example 4 and pass through film forming device (200 μm of gaps) masking on a pet film.The thickness evenness data such as table 8 below of gained film, after cutting Film be attached on 2835 supports lighted of standard the result such as table 9 below for carrying out Photoelectric characterization and test.And with the present embodiment Middle silicon composition encapsulates LED to realize film forming photo during CSP LED encapsulation as described in Figure 3.
Postscript, the fluorescent material and the mixture of silicon composition obtained by foregoing 2-4, inventor also produces A series of phosphor laminate, as shown in figure 4, arbitrarily choose a phosphor laminate therein (specification be 22.5cm × 22.5cm), and the membranelle for being divided into that numbering is a, b, c, d, e, f, g, h, i is averaged, chooses b, d, i membranelle therein and enter The photochromic consistency detection of row (optional 25 points test on the membrane plane of each membranelle), test result can be found in Fig. 5, Fig. 6 and table 10。
Foregoing any membranelle is arbitrarily chosen again, and mode and the embodiment 1 of reference picture 8 obtain silicon composition formation Organosilicon glued membrane cooperatively forms double-deck glued membrane, to its photochromic consistency detection (in optional 25 points test on membrane plane), test Result can be found in table 11.
Therefore may certify that, silicon composition of the present invention assembles the encapsulating material to be formed with fluorescent material will send out semiconductor Optical device, particularly CSP LED encapsulation structures have more preferably photochromic uniformity.
5~embodiment of embodiment 9：The formula of each silicon composition see table 12- tables 13, its collocation method and implementation Example 1 is essentially identical.
10~embodiment of embodiment 14：The formula of each silicon composition is essentially identical with 5~embodiment of embodiment 9, but With AMS, styrene list fluorine chlorine, N, N- bis- (methyl) acrylic acid, N- methyl-N-ethylaminos ethyl ester (methyl) third The diluents such as olefin(e) acid ester, methylol (methyl) acrylamide instead of solvent.
Likewise, mode of the inventor referring also to embodiment 1- embodiments 4, to having for 5~embodiment of embodiment 14 The properties of machine silicon composition are tested, and find that it is respectively provided with a series of foregoing superperformances.
It is attached and, other compounds that inventor is also addressed with this specification and with being used for raw material and assemble to form it Its multigroup silicon composition, and its properties is tested one by one, test result and 1~embodiment of embodiment 5 Substantially it is close.
It should be noted that herein, term " including ", "comprising" or its any other variant be intended to non-row His property is included, so that process, method, article or equipment including a series of key elements not only include those key elements, and And also include other key elements being not expressly set out, or also include for this process, method, article or equipment institute are intrinsic Key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that including Also there is other identical element in the process of the key element, method, article or equipment.
It should be appreciated that above-described embodiment is only explanation technology design of the invention and feature, this is familiar with its object is to allow The personage of item technology will appreciate that present disclosure and implement according to this that it is not intended to limit the scope of the present invention.It is all According to the equivalent change or modification that spirit of the invention is made, should all be included within the scope of the present invention.
The photochromic consistency detection result of the membranelle b of table 10
The photochromic consistency detection result of CSP LED duplicatures of table 11
The silicon composition formula of 12 embodiment 5- embodiments of table 9
The silicon composition formula of 13 embodiment 5- embodiments of table 9
★It show wt% of the 1~component of component 3 in non-solvent component
☆It show wt% of the solvent in the silicon composition

Claims (10)

1. a kind of silicon composition for being applied to semiconductor packages, it is characterised in that include：
Number-average molecular weight is higher than 3 × 104The silicone based rubber of g/mol,
Silicone resin containing vinyl-functional,
Silicone resin containing Si-H functional groups,
Hydrosilylation catalysts,
And, the solvent or diluent of homogeneous phase solution are formed to each component with the silicon composition coordinates；
Preferably, the content that silicone based rubber accounts for non-solvent component in the silicon composition is 1wt%~99wt%, excellent Elect 10wt%~70wt%, especially preferably 20wt%~50wt% as；
And/or, the content of the silicone resin containing vinyl-functional is 1wt%~90wt% in the silicon composition, Preferably 10wt%~70wt%, especially preferably 20wt%~50wt%；
And/or, the content of the silicone resin containing Si-H functional groups is 1wt%~90wt% in the silicon composition, excellent Elect 2wt%~50wt%, especially preferably 5wt%~30wt% as；
And/or, the silicone based rubber contains vinyl-functional, it is preferred that in each molecule of the silicone based rubber Contain more than 2 vinyl, it is preferred that the silicone based rubber contains 0.01wt%~70wt% vinyl, it is furthermore preferred that The silicone based rubber contains phenyl functional group, it is preferred that the silicone based rubber contains 0.01wt%~95wt% phenyl, It is further preferred that containing more than 2 phenyl in each molecule of the silicone based rubber, it is preferred that the siloxy group The number-average molecular weight of rubber is 3 × 104G/mol~1 × 108G/mol, more preferably 1 × 105G/mol~1 × 107G/mol, Especially preferably 3 × 105G/mol~1 × 106g/mol；
And/or, more than 2 vinyl are contained in each molecule of the silicone resin containing vinyl-functional, it is preferred that The silicone resin containing vinyl-functional includes straight chain, side chain or network structure, it is preferred that described containing vinyl functional The number-average molecular weight of the silicone resin of group is 102G/mol~105G/mol, more preferably 1 × 102G/mol~1 × 104g/ mol；It is furthermore preferred that containing more than 1 phenyl in each molecule of the silicone resin containing vinyl-functional；
And/or, more than 2 Si-H bases are contained in each molecule of the silicone resin containing Si-H functional groups, it is preferred that institute State the silicone resin containing Si-H functional groups and include straight chain, side chain or network structure；Preferably, the silicon containing Si-H functional groups The number-average molecular weight of oxygen alkane resin is 102G/mol~105G/mol, more preferably 1 × 102G/mol~1 × 104g/mol；More Preferably, more than 1 phenyl is contained in each molecule of the silicone resin containing Si-H functional groups；
Preferably, the content of Si-H bases is excellent in 0.1mol%~100mol% in the silicone resin containing Si-H functional groups 0.2mol%~95mol% is selected in, particularly preferably in 0.5mol%~90mol%；
And/or, Si-H bases and the siloxanes tree containing vinyl-functional in the silicone resin containing Si-H functional groups Mol ratio=0.02~50 of vinyl in fat：1, preferably 0.1~10：1, particularly preferably 0.5~5：1；
And/or, the described silicone resin containing vinyl-functional includes RSiO3/2Unit, RR'SiO2/2Unit, RR'R " SiO1/2Unit and SiO4/2The combination of any one or more in unit, wherein R, R', R " is substituted or unsubstituted list Valency alkyl；And/or, the described silicone resin containing Si-H functional groups includes RSiO3/2Unit, RR'SiO2/2Unit, RR'R " SiO1/2Unit and SiO4/2The combination of any one or more in unit, wherein R, R', R " is substituted or unsubstituted list Valency alkyl；
And/or, in the silicon composition content of solvent be 1wt%~90wt%, preferably 20wt%~80wt%, especially It is preferably 30wt%~70wt%, it is furthermore preferred that solvent boiling point at ambient pressure is 60 DEG C~250 DEG C；
And/or, the diluent includes at least one response type diluent, it is preferred that the response type diluent is used can Participate in the monovinyl compound of hydrosilylation, the compound containing Si-H functional group or contain a Si-H official The monovinyl compound that can be rolled into a ball；Particularly preferably from mono-vinyl silane compound and/or monoallyl silane compound；It is preferred that , diluent viscosity at room temperature is less than 100cPs, particularly preferably less than particularly preferably less than 50cPs, 10cPs；
And/or, also comprising additive, the additive includes suppressing the described silicon composition for being applied to semiconductor packages Agent, small molecule silane, adhesion promoters, inorganic filler, rheology modifier, tackifier, wetting agent, defoamer, levelling agent, dye The combination of any one or more in material, micron or nano silicon and fluorescent material antisettling agent；
And/or, the viscosity of the silicon composition is 1000mPa.s~500000mPa.s, preferably 5000mPa.s~ 100000mPa.s, especially preferably 7000mPa.s~500000mPa.s；
And/or, the hardness that thing is fully cured of the silicon composition is shore hardness A20~shore hardness D 100, preferably It is shore hardness A60~shore hardness D 90, especially preferably shore hardness A80~shore hardness D 80；
And/or, the thing that is fully cured of the silicon composition is 50%~100% for the light transmittance of visible ray, preferably 70%~100%, especially preferably 80%~100%.
2. a kind of fluorescence encapsulating composition, it is characterised in that include：
The silicon composition for being applied to semiconductor packages described in claim 1,
And, at least one fluorescent material in the silicon composition is dispersed in, the fluorescent material includes fluorescence Powder and/or fluorescence quantum；
Preferably, the content that fluorescent material accounts for non-solvent component in the fluorescence encapsulating composition is 0.01wt%~90wt%, Preferably 1wt%~80wt%, more preferably 3wt%~70wt%；And/or, the colour temperature of the fluorescent material is 1800K- 16000K, colour rendering index is 60~100；
Preferably, the particle diameter of the fluorescent material is 1.0~10000nm, it is preferred that the fluorescent material includes fluorescent RE powder, dilute Native garnet phosphor powder, sulfurized alkaline earth metal gallate, alkaline earth sulfide, vulcanization zinc-type, alkali earth metal aluminate, phosphoric acid Salt, borate, silicate, fluorine arsenate, fluogermanate, rare-earth sulfide, rare earth oxide, vanadate, Nitride phosphor In any one two or more combination, especially preferred, the fluorescent material is rare earth doped YAG yttrium-aluminium-garnets Fluorescent material or the YAG yttrium aluminium garnet fluorescent powders of Ce doping；
Preferably, the particle diameter of the fluorescence quantum is 1.0~20nm, it is preferred that the composition material bag of the fluorescence quantum Containing II-VI group or iii-v element, particularly preferably, the material of the fluorescence quantum includes ZnSe, CdS, CdSe and CdSe In any one two or more combination, it is further preferred that the material of the fluorescence quantum be selected from gallium arsenic, indium phosphide Or gallium nitride, still more preferably, the fluorescence quantum has core shell structure, still more preferably, the fluorescence volume Son point is CdSe/ZnS nuclear shell structure quantum points；Preferably, fluorescent material accounts for non-solvent component in the fluorescence encapsulating composition Content is 0.01wt%~90wt%；And/or, fluorescence quantum accounts for the content of non-solvent component in the fluorescence encapsulating composition Preferably 0.01~70wt%.
3. silicon composition described in claim 1 or fluorescence encapsulating composition described in claim 2 are in article bonding, prepared product Application in product face coat or semiconductor packages.
4. a kind of adhering method, it is characterised in that including：
Apply described in claim 1 between the first article and/or the second article surface and/or the first article and the second article Silicon composition,
The solvent in the silicon composition is removed, and makes the silicon composition semi-solid preparation, formed in the pre- solid of solid phase Compound；
The precuring thing is fully cured by heating or electromagnetic irradiation, realizes that the first article is bonding with the second article.
5. semiconductor packages material, comprising the silicon composition described in claim 1 and/or its different degrees of solidification Fluorescence encapsulating composition described in thing and/or claim 2 and/or its different degrees of solidfied material；
And/or, film or coating, mainly the fluorescence envelope as described in silicon composition or claim 2 described in claim 1 Dress composition semi-solid preparation solidify to form, and is preferably solidify to form by described fluorescence encapsulating composition；
Preferably, the condition of the semi-solid preparation includes：Heating ventilation condition, temperature conditionss are 20 DEG C~200 DEG C, preferably 80 DEG C ~120 DEG C, the time is 10~100000s, preferably 10~8000s；
Preferably, the condition of the solidification includes：The silicon composition or the fluorescence are made by heating or electromagnetic irradiation Encapsulating composition is fully cured.
6. semiconductor light-emitting apparatus, it is characterised in that including：Semiconductor luminous chip, and, film described in claim 5 or Coating；And the semiconductor luminous chip and the film or coating interval setting.
7. a kind of method for packing, it is characterised in that including：
Article to be packaged is provided,
Fluorescence encapsulating composition described in silicon composition or claim 2 described in claim 1 is applied to described treating On the article of encapsulation, and the encapsulation of the article is realized by radiating and/or being heating and curing.
8. a kind of method for packing or article security method, it is characterised in that including：
1) the fluorescence encapsulating composition described in the silicon composition or claim 2 described in claim 1 is applied to first Film is formed on base material,
2) remove the organic solvent in the film, formation can completely be uncovered from the first base material and surface tack free precuring Film,
3) pre-cured film is covered into the first base material, the second base material the surface of any one or pre-cured film is arranged at first Between base material and the second base material, and apply pressure to pre-cured film, pre-cured film is attached to the first base material or the second base On material or by the first base material and the second substrate bonding,
4) pre-cured film is fully cured under radiation and/or heating condition, realizes to the first base material and/or the envelope of the second base material Dress forms protective layer in the first base material and/or the second substrate surface；
Preferably, step 1) include：At least from any one in film forming device and mode of printing by the silicon composition or Described fluorescence encapsulating composition is applied in the first base material and forms film；
Preferably, step 2) include：Organic solvent in the film is removed under heating ventilation condition, so as to form described pre- solid Change film；
Preferably, step 2) in the temperature conditionss that use be 20 DEG C~200 DEG C, the time is 10~100000s；
Be more highly preferred to, step 2) in the temperature conditionss that use be 80 DEG C~120 DEG C, the time is 10~8000s；
Preferably, step 3) in apply stressed size for 0.001Pa~10000Pa to pre-cured film, preferably 0.1Pa~ 1000Pa, it is 0.001~100000 second, preferably 0.1~100 second to apply pressure time；
Preferably, step 3) also include：During pressure is applied to pre-cured film, also at least pre-cured film is heated And/or radiation treatment, pre-cured film is bonded on the first base material or the second base material, wherein the heating-up temperature for using is 0 ~260 DEG C, preferably 50~200,80~150 DEG C, the electromagnetic wavelength that irradiation is used is 10-8~103M, the time is preferably 10 ~100000 seconds；
Preferably, second base material includes semiconductor devices, and the semiconductor devices includes semiconductor photoelectric device, described half Conductor photoelectric device includes light emitting semiconductor device, and the light emitting semiconductor device includes LED.
9. the encapsulating structure of light emitting semiconductor device, mainly as the semiconductor packages material described in claim 5 with partly lead Body luminescent device is constituted；And the encapsulation cavity body body subtended angle of the encapsulating structure is more than 90 °, preferably more than 100 °, preferably More than 120 °.
10. a kind of device, it is characterised in that comprising the encapsulating structure or claim 9 that are formed by the methods described of claim 7 or 8 Described encapsulating structure；Preferably, the encapsulating structure is main as the silicon composition or claim described in claim 1 The solidfied material of the fluorescence encapsulating composition described in 2 and the article composition encapsulated by the solidfied material, wherein packed article bag Semiconductor devices is included, the semiconductor devices includes semiconductor photoelectric device, and the semiconductor photoelectric device is sent out including semiconductor Optical device, the light emitting semiconductor device includes LED, preferably chip size packages semiconductor devices or wafer level semiconductor device Part；
And/or, a kind of semiconductor light-emitting apparatus, comprising semiconductor luminous chip, it is characterised in that：The semiconductor luminous chip Exiting surface on be covered with more than one layer glued membrane, one layer of glued membrane of wherein at least is phosphor laminate, and the phosphor laminate is by weighing Profit requires that fluorescence encapsulating composition is formed described in 2；Preferably, the phosphor laminate has inverted trapezoidal section, it is preferred that described Inverted trapezoidal section is isosceles trapezoid；Preferably, the semiconductor luminous chip has five exiting surfaces, described phosphor laminate The exiting surface of the semiconductor luminous chip is completely covered；Preferably, at least one is also covered with the phosphor laminate has Machine pellosil.
CN201710112327.1A 2016-09-28 2017-02-28 It is applied to silicon composition and its application of semiconductor packages Pending CN106867259A (en)

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WO2021109730A1 (en) * 2019-12-02 2021-06-10 苏州太湖电工新材料股份有限公司 Two-component organosilicon potting sealant and application method therefor
CN112802943A (en) * 2021-01-15 2021-05-14 东莞市中麒光电技术有限公司 LED COB module repairing method
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