WO2020133160A1 - Composite phosphor film and application thereof - Google Patents

Composite phosphor film and application thereof Download PDF

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WO2020133160A1
WO2020133160A1 PCT/CN2018/124689 CN2018124689W WO2020133160A1 WO 2020133160 A1 WO2020133160 A1 WO 2020133160A1 CN 2018124689 W CN2018124689 W CN 2018124689W WO 2020133160 A1 WO2020133160 A1 WO 2020133160A1
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film
fluorescent
infrared radiation
light emitting
composite
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张汝志
陆加林
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弗洛里光电材料(苏州)有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/644Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0075Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

A composite phosphor film, comprising a fluorescent film and an infrared radiation film combined with the fluorescent film. The fluorescent film comprises an organic silicon matrix. Fluorescent particles are evenly distributed in the organic silicon matrix. The infrared radiation film comprises a base material and an inorganic dissipating filler which is uniformly dispersed in the base material. The composite phosphor film allows light with a set wavelength to pass through. Also provided is use of the composite phosphor film, for example, an application in packaging of a semiconductor light emitting apparatus.

Description

复合荧光胶膜及其应用Composite fluorescent adhesive film and its application 技术领域Technical field
本申请涉及半导体领域的一种荧光胶膜(Phosphor Film or Phosphor Sheet),特别是一种复合荧光胶膜,其可在封装半导体发光元件,例如晶圆级WLP LED、芯片尺寸CSP LED、量子点LED(QD LED)、激光LED、LED灯丝灯、Micro LED、mini LED等领域中应用。This application relates to a phosphor film (Phosphor Film or Phosphor Sheet) in the field of semiconductors, especially a composite fluorescent film, which can be used to encapsulate semiconductor light-emitting components, such as wafer-level WLP LEDs, chip size CSP LEDs, quantum dots LED (QD LED), laser LED, LED filament lamp, Micro LED, mini LED and other fields.
背景技术Background technique
LED(半导体发光二极管)因具有低能耗、长寿命、小体积等优点,而被广泛应用于照明、背光等领域。而封装工序是LED制程中的一个非常重要的工序,其对于LED的工作性能、成本等有着非常显著的影响。LEDs (semiconductor light-emitting diodes) are widely used in lighting, backlighting, etc. due to their advantages of low energy consumption, long life, and small size. The packaging process is a very important process in the LED manufacturing process, which has a very significant impact on the working performance and cost of the LED.
现有的LED封装工艺主要有器件级封装技术、晶圆级LED封装(WLP)技术、芯片尺寸级封装CSP(Chip Scale Package)技术等,这些技术各有优势,但同时还均存在一些缺陷。有鉴于此,研究人员还一致致力于对LED封装技术进行改进。The existing LED packaging processes mainly include device-level packaging technology, wafer-level LED packaging (WLP) technology, and chip-scale packaging CSP (Chip Scale Package) technology. These technologies have their own advantages, but they also have some defects. In view of this, the researchers are also unanimously committed to improving the LED packaging technology.
例如,US7294861B、US2014091346A1等提出了利用荧光胶带或荧光粘接片进行LED封装的技术。在这些荧光胶带、荧光粘接片中分散有荧光粉、荧光纳米晶等,用以实现LED出射光的波长转换。此类封装形式虽然在操作便捷性、成本等方面较之传统技术均有改善,但仍存在缺陷,例如,不利于LED工作时产生的热量转移,而这一问题对LED性能也有较大影响。另一方面,目前LED散热技术大都仍然采用传统的散热器结构,经热传导散热,但是其散热性能还有待进一步提高。For example, US7294861B, US2014091346A1, etc. have proposed the use of fluorescent tape or fluorescent adhesive sheet for LED packaging technology. Phosphor powder, fluorescent nanocrystals, etc. are dispersed in these fluorescent tapes and fluorescent adhesive sheets to realize the wavelength conversion of the light emitted from the LED. Although this type of packaging has improved operation convenience and cost compared with traditional technologies, it still has defects, for example, it is not conducive to the heat transfer generated when the LED is working, and this problem also has a large impact on the performance of the LED. On the other hand, most of the current LED heat dissipation technology still uses the traditional heat sink structure to dissipate heat through heat conduction, but its heat dissipation performance needs to be further improved.
发明内容Summary of the invention
本申请的主要目的在于提供一种改良的复合荧光胶膜(Phosphor Film,PF),以克服现有技术中的不足。The main purpose of the present application is to provide an improved composite phosphor film (Phosphor Film, PF) to overcome the deficiencies in the prior art.
本申请的另一目的在于提供利用所述复合荧光胶膜封装半导体发光元件的方法。Another object of the present application is to provide a method for packaging semiconductor light-emitting elements using the composite fluorescent glue film.
为实现所述发明目的,本申请采用的技术方案包括:To achieve the purpose of the invention, the technical solutions adopted in this application include:
本申请实施例提供了一种复合荧光胶膜,其包括荧光膜以及与所述荧光膜结合的红外辐射膜,所述荧光膜包括有机硅基体,所述有机硅基体中均匀分散有荧光颗粒物,所述红外辐射膜包括基材及于所述基材中均匀分散的无机散热填料,所述复合荧光胶膜可使设定波长的光线透过。An embodiment of the present application provides a composite fluorescent adhesive film, which includes a fluorescent film and an infrared radiation film combined with the fluorescent film, the fluorescent film includes an organic silicon matrix, and fluorescent particles are uniformly dispersed in the organic silicon matrix, The infrared radiation film includes a base material and an inorganic heat dissipation filler uniformly dispersed in the base material, and the composite fluorescent adhesive film can transmit light of a set wavelength.
其中,所述复合荧光胶膜在与半导体发光器件结合后,所述半导体发光器件于工作时产生的热量传导至复合荧光胶膜时,其中的红外辐射膜可以通过辐射散热等方式高效地将热量转移到外部环境中。After the composite fluorescent glue film is combined with the semiconductor light emitting device, when the heat generated by the semiconductor light emitting device during operation is conducted to the composite fluorescent glue film, the infrared radiation film therein can efficiently dissipate the heat through radiation and heat dissipation Move to the external environment.
本申请实施例还提供了一种半导体发光装置,其包括半导体发光器件以及所述的复合荧光胶膜,所述复合荧光胶膜中的荧光膜或红外辐射膜与所述半导体发光器件的出光面结合。An embodiment of the present application further provides a semiconductor light-emitting device, which includes a semiconductor light-emitting device and the composite fluorescent glue film, the fluorescent film or the infrared radiation film in the composite fluorescent glue film and the light emitting surface of the semiconductor light-emitting device Combine.
本申请实施例还提供了一种半导体发光装置的封装方法,其包括:An embodiment of the present application also provides a packaging method of a semiconductor light emitting device, which includes:
提供所述的复合荧光胶膜,以及Provide the composite fluorescent adhesive film, and
将所述复合荧光胶膜中的荧光膜或红外辐射膜与所述半导体发光器件的出光面固定结合。The fluorescent film or infrared radiation film in the composite fluorescent glue film is fixedly combined with the light emitting surface of the semiconductor light emitting device.
进一步地,所述半导体发光器件包括LED。Further, the semiconductor light emitting device includes an LED.
采用本申请的所述方案,可以在有效简化半导体发光器件的封装工艺的同时,改善半导体发光器件的散热,从而保障半导体发光器件的工作稳定性,延长其使用寿命。By adopting the solution of the present application, while effectively simplifying the packaging process of the semiconductor light emitting device, the heat dissipation of the semiconductor light emitting device can be improved, thereby ensuring the working stability of the semiconductor light emitting device and extending its service life.
以下结合实施例对本申请的技术方案作更为具体的解释说明,但不作为对本申请的限定。The technical solutions of the present application will be explained more specifically in conjunction with the embodiments below, but it is not intended to limit the present application.
附图说明BRIEF DESCRIPTION
图1是本申请一实施方案中一种复合荧光胶膜的制作工艺示意图;1 is a schematic diagram of a manufacturing process of a composite fluorescent adhesive film in an embodiment of the present application;
图2是本申请一对照例中一种利用荧光膜封装LED的结构示意图;2 is a schematic structural view of a fluorescent film encapsulating LED in a comparative example of this application;
图3是本申请一典型实施例中一种采用复合荧光胶膜封装LED的结构示意图;FIG. 3 is a schematic structural view of a composite fluorescent adhesive film encapsulating LED in a typical embodiment of the present application;
图4是本申请另一典型实施例中一种采用复合荧光胶膜封装LED的结构示意图。FIG. 4 is a schematic structural diagram of a compound fluorescent adhesive film encapsulating LED in another exemplary embodiment of the present application.
图5是本申请实施例中采用九点法衡量光的空间色度一致性的示意图。FIG. 5 is a schematic diagram of measuring the spatial chromaticity consistency of light using the nine-point method in the embodiment of the present application.
图6A-图6E是本申请一些实施例中LED的封装结构示意图。6A-6E are schematic diagrams of LED package structures in some embodiments of the present application.
具体实施方式detailed description
本申请实施例的一个方面提供了一种复合荧光胶膜,其包括荧光膜以及与所述荧光膜结合的红外辐射膜,所述荧光膜包括有机硅基体,所述有机硅基体中均匀分散有荧光颗粒物,所述红外辐射膜包括基材及于所述基材中均匀分散的无机散热填料,所述复合荧光胶膜可使设定波长的光线透过。An aspect of an embodiment of the present application provides a composite fluorescent adhesive film, which includes a fluorescent film and an infrared radiation film combined with the fluorescent film, the fluorescent film includes an organic silicon matrix, and the organic silicon matrix is uniformly dispersed For fluorescent particles, the infrared radiation film includes a base material and an inorganic heat dissipating filler uniformly dispersed in the base material, and the composite fluorescent adhesive film can transmit light of a set wavelength.
进一步地,所述无机散热填料包括二氧化钛、二氧化锆、氧化硅、氮化硼、氧化锌、氧化铝、氧化镁、云母、稀土金属氧化物中的任意一种或多种的组合,但不限于此。Further, the inorganic heat dissipation filler includes any one or a combination of titanium dioxide, zirconium dioxide, silicon oxide, boron nitride, zinc oxide, aluminum oxide, magnesium oxide, mica, and rare earth metal oxide, but not Limited to this.
进一步地,所述无机散热填料可以是颗粒状、微片状、线状、管状等的,其尺寸可以是纳米级、亚微米级或微米级的。Further, the inorganic heat-dissipating filler may be in the form of particles, microplates, wires, tubes, etc., and the size thereof may be on the order of nanometers, submicrometers, or micrometers.
通过在所述基材内均匀分散这些无机散热填料,可以使形成的所述红外辐射膜具有辐射散热功能。By uniformly dispersing these inorganic heat dissipation fillers in the base material, the infrared radiation film formed can have a radiation heat dissipation function.
在一些较为优选的实施方案中,通过选择所述无机散热填料的种类、尺寸等,可以使所述红外辐射膜产生的辐射波长主要分布于红外波段、远红外波段,利于包含所述复合荧光胶膜的照明装置、显示装置等在家居环境中应用,并产生人体保健等功效。In some more preferred embodiments, by selecting the type and size of the inorganic heat dissipating filler, the radiation wavelength generated by the infrared radiation film can be mainly distributed in the infrared band and the far-infrared band, which is beneficial to contain the composite fluorescent glue The lighting device and display device of the film are used in the home environment, and produce human body health care and other functions.
在一些较为优选的实施方案中,所述无机散热填料的粒径为0.001μm~500μm,优选为0.05μm~50μm,更优选为0.5μm~10μmIn some more preferred embodiments, the particle size of the inorganic heat-dissipating filler is 0.001 μm to 500 μm, preferably 0.05 μm to 50 μm, more preferably 0.5 μm to 10 μm
在一些较为优选的实施方案中,所述红外辐射膜内无机散热填料的含量为0.001wt%~10wt%,优选为0.1wt%~10wt%,更优选为1wt%~10wt%.In some more preferred embodiments, the content of the inorganic radiation filler in the infrared radiation film is 0.001wt% ~ 10wt%, preferably 0.1wt% ~ 10wt%, more preferably 1wt% ~ 10wt%.
在一些较为优选的实施方案中,所述无机散热填料采用氧化锌与氧化镁的组合和/或云母。In some more preferred embodiments, the inorganic heat dissipation filler uses a combination of zinc oxide and magnesium oxide and/or mica.
优选的,所述红外辐射膜内氧化锌的含量为0.001wt%~10wt%,进一步优选为0.1wt%~10wt%,尤其优选为1wt%~10wt%。Preferably, the content of zinc oxide in the infrared radiation film is 0.001 wt% to 10 wt%, further preferably 0.1 wt% to 10 wt%, and particularly preferably 1 wt% to 10 wt%.
优选的,所述红外辐射膜内氧化镁的含量为0.001wt%~10wt%,进一步优选为0.1wt%~10wt%,尤其优选为1wt%~10wt%。Preferably, the content of magnesium oxide in the infrared radiation film is 0.001 wt% to 10 wt%, further preferably 0.1 wt% to 10 wt%, and particularly preferably 1 wt% to 10 wt%.
优选的,所述红外辐射膜内云母的含量为0.001wt%~10wt%,进一步优选为0.1wt%~10wt%, 尤其优选为1wt%~10wt%。云母的加入,将使所述红外辐射膜具有更好的辐射散热性能。Preferably, the content of mica in the infrared radiation film is 0.001 wt% to 10 wt%, further preferably 0.1 wt% to 10 wt%, and particularly preferably 1 wt% to 10 wt%. The addition of mica will make the infrared radiation film have better radiation heat dissipation performance.
进一步地,所述基材可以由有机硅组合物形成。Further, the substrate may be formed of a silicone composition.
优选的,用于形成所述基材的有机硅组合物可以与用以形成所述荧光膜的有机硅基体的有机硅组合物相同,以便能形成匹配的多层结构、良好的粘附,并且在器件使用期间展示优异的可靠性。Preferably, the silicone composition used to form the substrate may be the same as the silicone composition used to form the phosphor matrix of the phosphor film, so as to form a matched multilayer structure, good adhesion, and Demonstrates excellent reliability during device use.
在一些实施方案中,所述红外辐射膜可以由有机硅组合物与荧光粉颗粒的组合物预固化(B-stage Silicone Curables)形成,且表面具有压敏胶的功能(pressure sensitive adhesive PSA)。在本申请的一些实施方案中,所述红外辐射膜的下述剥离强度的百分率为30%以上;In some embodiments, the infrared radiation film may be formed by pre-curing (B-stage, Silicone, Curables) a composition of a silicone composition and phosphor particles, and the surface has a pressure sensitive adhesive (PSA) function. In some embodiments of the present application, the percentage of the following peel strength of the infrared radiation film is more than 30%;
所述剥离强度的百分率=[75℃气氛下的剥离强度/25℃气氛下的剥离强度]×100Percentage of the peel strength=[Peel strength in 75°C atmosphere/Peel strength in 25°C atmosphere]×100
所述75℃气氛下的剥离强度:在温度75℃,以剥离角度180度、速度300mm/分钟将所述红外辐射膜从半导体发光器件的出光面剥离时的剥离强度;Peeling strength in the 75°C atmosphere: peeling strength when peeling the infrared radiation film from the light emitting surface of the semiconductor light emitting device at a peeling angle of 180° and a speed of 300 mm/min at a temperature of 75°C;
所述25℃气氛下的剥离强度:在温度25℃,以剥离角度180度、速度300mm/分钟将所述红外辐射膜从半导体发光器件的出光面剥离时的剥离强度。Peeling strength in the 25°C atmosphere: Peeling strength when peeling the infrared radiation film from the light exit surface of the semiconductor light emitting device at a temperature of 25°C at a peeling angle of 180 degrees and a speed of 300 mm/min.
进一步地,所述红外辐射膜的厚度为0.005μm~10000μm,优选为0.05μm~5000μm,尤其优选为1μm~1000μm。Further, the thickness of the infrared radiation film is 0.005 μm to 10000 μm, preferably 0.05 μm to 5000 μm, and particularly preferably 1 μm to 1000 μm.
通过采用所述的优选实施方案,还可使得所述红外辐射膜具有较高的光透过率,并产生类同于导光体、光扩散体的功能,即,可以使射入所述红外辐射膜的光线能均匀的从所述红外辐射膜的出光面射出,提升出光品质。By adopting the preferred embodiment, the infrared radiation film can also have a higher light transmittance and produce functions similar to the light guide and light diffuser, that is, the infrared radiation film can be injected into the infrared The light of the radiation film can be evenly emitted from the light exit surface of the infrared radiation film to improve the light quality.
进一步地,所述有机硅基体可以由有机硅组合物预固化或完全固化形成。Further, the silicone matrix may be formed by pre-curing or completely curing the silicone composition.
进一步地,所述荧光膜可以由荧光封装组合物预固化或完全固化形成,所述荧光封装组合物可以主要由所述有机硅组合物和所述荧光颗粒物(如下亦简称“荧光材料”)组成。Further, the fluorescent film may be formed by pre-curing or completely curing the fluorescent encapsulating composition, and the fluorescent encapsulating composition may be mainly composed of the silicone composition and the fluorescent particles (hereinafter also referred to as "fluorescent material") .
在一些实施方案中,所述荧光膜可以由荧光封装组合物预固化(B-stage Silicone Curables)形成,且表面具有压敏胶的功能(pressure sensitive adhesive PSA)。In some embodiments, the fluorescent film may be formed by pre-curing the fluorescent encapsulating composition (B-stage, Silicones, Curables), and the surface has a pressure-sensitive adhesive (PSA) function.
更进一步地,所述荧光封装组合物通过以下比例配所述荧光颗粒物和所述有机硅组合物并搅拌混合来制备。Furthermore, the fluorescent encapsulating composition is prepared by mixing the fluorescent particles and the silicone composition in the following ratio and stirring and mixing.
在一些实施方案中,所述荧光封装组合物中荧光材料占非溶剂组分的含量为0.01wt%~90wt%,优选为1wt%~80wt%,更优选为3wt%~70wt%。In some embodiments, the fluorescent material in the fluorescent encapsulating composition accounts for 0.01 wt% to 90 wt% of the non-solvent component, preferably 1 wt% to 80 wt%, and more preferably 3 wt% to 70 wt%.
在一些实施方案中,所述荧光材料的色温为1800K-20000K,显色指数为60~100。In some embodiments, the color temperature of the fluorescent material is 1800K-20000K, and the color rendering index is 60-100.
在一些实施方案中,所述荧光颗粒物为荧光粉,其粒径为1~50μm。In some embodiments, the fluorescent particles are fluorescent powders with a particle size of 1-50 μm.
在一些实施方案中,所述荧光粉包括稀土荧光粉、稀土石榴石荧光粉、碱土金属硫化镓酸盐、碱土金属硫化物、硫化锌型、碱土金属铝酸盐、磷酸盐、硼酸盐、硅酸盐、氟砷酸盐、氟锗酸盐、稀土硫化物、稀土氧化物、钒酸盐、氮化物荧光粉中的任意一种两种以上的组合。优选的,所述荧光粉可以选用化学与高温稳定性较佳的铝酸盐、硅酸盐、氮化物以及氮氧化物类荧光粉,特别是氮化物以及氮氧化物类荧光粉。尤其优选的,所述荧光粉为稀土元素掺杂的YAG钇铝石榴石荧光粉或Ce掺杂的YAG钇铝石榴石荧光粉。这些荧光粉可以从市场途径自由的获取。例如,所述荧光粉可以是多种荧光粉的组合物,例如可以添加有GE公司(通用电气公司)出品的红粉,即氟化物荧光粉,其属于氟硅酸钾(PFS)磷光体系列。In some embodiments, the phosphor includes rare earth phosphor, rare earth garnet phosphor, alkaline earth metal sulfide gallate, alkaline earth metal sulfide, zinc sulfide type, alkaline earth metal aluminate, phosphate, borate, Any combination of two or more of silicate, fluoroarsenate, fluorogermanate, rare earth sulfide, rare earth oxide, vanadate, and nitride phosphor. Preferably, the phosphor can be selected from aluminate, silicate, nitride and oxynitride phosphors with better chemical and high temperature stability, especially nitride and oxynitride phosphors. Particularly preferably, the phosphor is YAG yttrium aluminum garnet phosphor doped with rare earth elements or Ce doped YAG yttrium aluminum garnet phosphor. These phosphors can be freely obtained from the market. For example, the phosphor may be a combination of various phosphors, for example, a red phosphor produced by GE Corporation (General Electric Company), that is, a phosphor phosphor, which belongs to the potassium fluorosilicate (PFS) phosphor series, may be added.
在一些实施方案中,进一步地,所述荧光颗粒物为荧光量子点,其粒径为1~100nm,优选为1~20nm。In some embodiments, further, the fluorescent particles are fluorescent quantum dots with a particle size of 1-100 nm, preferably 1-20 nm.
在一些实施方案中,所述荧光量子点的组成材料包含II-VI族或III-V族元素,尤为优选的,所述荧光量子点的材质包括ZnSe、CdS、CdSe和CdSe中的任意一种两种以上的组合,进一步优选的,所述荧光量子点的材质选自镓化砷、磷化铟或氮化镓,更进一步优选的,所述荧光量子点具有核壳结构,更进一步优选的,所述荧光量子点为CdSe/ZnS核壳结构量子点。In some embodiments, the composition material of the fluorescent quantum dots includes group II-VI or group III-V elements, and it is particularly preferred that the material of the fluorescent quantum dots includes any one of ZnSe, CdS, CdSe, and CdSe A combination of two or more, further preferably, the material of the fluorescent quantum dot is selected from arsenic gallium, indium phosphide, or gallium nitride, still more preferably, the fluorescent quantum dot has a core-shell structure, still more preferably The fluorescent quantum dots are CdSe/ZnS core-shell structure quantum dots.
在一些实施方案中,所述荧光量子点亦可选用钙钛矿量子点。In some embodiments, the fluorescent quantum dots may also be perovskite quantum dots.
在一些实施方案中,所述荧光封装组合物中荧光粉占非溶剂组分的含量优选为1.0wt%~90wt%,更优选为1.0wt%~70wt%。In some embodiments, the content of the phosphor in the non-solvent component in the fluorescent encapsulating composition is preferably 1.0 wt% to 90 wt%, and more preferably 1.0 wt% to 70 wt%.
在一些实施方案中,所述荧光封装组合物中荧光量子点占非溶剂组分的含量优选为0.01~50wt%,更优选为0.01~5.0wt%。In some embodiments, the content of fluorescent quantum dots in the non-solvent component in the fluorescent encapsulating composition is preferably 0.01-50 wt%, and more preferably 0.01-5.0 wt%.
所述有机硅组合物在分子内具有主要由硅氧烷键(-Si-O-Si-)形成的主链,以及键合于主链的硅原子(Si)的、由烷基(例如甲基等)、芳基(例如苯基等)或烷氧基(例如甲氧基)等有机基团形成的侧链。具体而言,作为有机硅树脂组合物,例如可列举出脱水缩合固化型有机硅树脂、加成反应固化型有机硅树脂、过氧化物固化型有机硅树脂、湿气固化型有机硅树脂等固化型有机硅树脂等。树脂可以单独使用或者两种以上组合使用。The silicone composition has a main chain formed mainly of siloxane bonds (-Si-O-Si-) in the molecule, and a silicon atom (Si) bonded to the main chain and composed of an alkyl group Side chains formed by organic groups such as aryl groups (eg phenyl) and alkoxy groups (eg methoxy). Specifically, examples of the silicone resin composition include dehydration condensation curing type silicone resin, addition reaction curing type silicone resin, peroxide curing type silicone resin, moisture curing type silicone resin, etc. Type silicone resin, etc. The resin can be used alone or in combination of two or more.
在一些实施方案中,所述有机硅组合物的主要成分为数均分子量高于3×10 4g/mol的硅氧烷基橡胶,含乙烯基官能团的硅氧烷树脂,含Si-H官能团的硅氧烷树脂,氢化硅烷化催化剂,以及,用以与所述有机硅组合物的各组分配合而形成均相溶液的有机溶剂或稀释剂。 In some embodiments, the main component of the silicone composition is a siloxane-based rubber with a number average molecular weight higher than 3×10 4 g/mol, a silicone resin containing vinyl functional groups, a Si-H functional group-containing A silicone resin, a hydrosilylation catalyst, and an organic solvent or diluent used to form a homogeneous solution with the components of the silicone composition.
在一些实施方案中,所述硅氧烷基橡胶(又称硅氧烷橡胶)含乙烯基官能团,优选的,所述硅氧烷基橡胶的每个分子中含有2个以上乙烯基,更优选的,所述硅氧烷基橡胶含苯基官能团,进一步优选的,所述硅氧烷基橡胶的每个分子中含有1个以上苯基。In some embodiments, the silicone-based rubber (also known as silicone rubber) contains vinyl functional groups, preferably, the silicone-based rubber contains more than 2 vinyl groups per molecule, more preferably Preferably, the silicone-based rubber contains phenyl functional groups. It is further preferred that the silicone-based rubber contains more than one phenyl group per molecule.
在一些实施方案中,所述硅氧烷橡胶是一种在聚合物主链上以有机硅氧烷单元作为重复链节的橡胶,其中由下面的通式-﹛Si(R 1)(R 2)-O--﹜表示有机硅氧烷单元,其中R 1和R 2各自是单价的有机基团,或特别是烷基,如甲基、乙基等;芳基,如苯基等;链烯基,如乙烯基等;氰烷基,如γ-氰丙基等;或氟烷基,如三氟丙基等。 In some embodiments, the silicone rubber is a rubber having organosiloxane units as repeating links on the polymer backbone, wherein the following general formula-{Si(R 1 )(R 2 )-O--﹜ represents an organosiloxane unit, wherein R 1 and R 2 are each a monovalent organic group, or especially an alkyl group, such as methyl, ethyl, etc.; an aryl group, such as phenyl, etc.; Alkenyl, such as vinyl, etc.; cyanoalkyl, such as γ-cyanopropyl, etc.; or fluoroalkyl, such as trifluoropropyl, etc.
在一些实施方案中,所述硅氧烷橡胶可以通过业界所知的合适途径获取,包括自制或从市场途径获取。例如,可参阅EP 0470745A2、《Glossary of Chemical Terms》(Van Nostr and Reinhold Company,1976年)、JP2005288916、DE102004050128.9、U3)279890A、JP 330084/1998、JP19981124、JP332821/1998、CN1212265A等文献,In some embodiments, the silicone rubber may be obtained through suitable sources known in the industry, including homemade or from market sources. For example, refer to EP 0470745A2, "Glossary of Chemical Terms" (Van Nostrand and Reinhold Company, 1976), JP2005288916, DE102004050128.9, U3) 279890A, JP 330084/1998, JP19981124, JP332821/1998, CN1212265A, etc.
更为具体的,所述硅氧烷橡胶可以选自二甲基硅氧烷橡胶、甲基苯基硅氧烷橡胶、甲基乙烯基硅氧烷橡胶、氟化的烷基甲基硅氧烷橡胶、氰烷基硅氧烷橡胶等,但也不限于此。More specifically, the silicone rubber may be selected from dimethyl silicone rubber, methyl phenyl silicone rubber, methyl vinyl silicone rubber, fluorinated alkyl methyl silicone Rubber, cyanoalkyl silicone rubber, etc., but not limited to this.
进一步地,在所述有机硅氧烷单元中的R 1和/或R 2优选乙烯基、苯基。 Further, R 1 and/or R 2 in the organosiloxane unit are preferably vinyl or phenyl.
进一步地,在所述有机硅组合物中,硅氧烷橡胶占非溶剂组分的含量可以为1wt%~90wt%,优选为10wt%~70wt%,尤其优选为20wt%~50wt%。Further, in the silicone composition, the content of the silicone rubber in the non-solvent component may be 1 wt% to 90 wt%, preferably 10 wt% to 70 wt%, and particularly preferably 20 wt% to 50 wt%.
较为理想的,所述硅氧烷橡胶中乙烯基的含量为硅氧烷橡胶的总重量的0.01%以上,70%以下。Preferably, the content of vinyl groups in the silicone rubber is 0.01% or more and 70% or less of the total weight of the silicone rubber.
更为理想的,所述硅氧烷橡胶中苯基的含量为硅氧烷橡胶的总重量的0.01%以上,95%以下。优选的,所述硅氧烷基橡胶的数均分子量为3×10 4g/mol~1×10 8g/mol,更优选的为1×10 5g/mol~1×10 7g/mol,尤其优选为3×10 5g/mol~1×10 6g/mol。 More preferably, the content of phenyl in the silicone rubber is 0.01% or more and 95% or less of the total weight of the silicone rubber. Preferably, the number average molecular weight of the silicone-based rubber is 3×10 4 g/mol to 1×10 8 g/mol, and more preferably 1×10 5 g/mol to 1×10 7 g/mol In particular, it is preferably 3×10 5 g/mol to 1×10 6 g/mol.
进一步地,所述含乙烯基官能团的硅氧烷树脂的每个分子中含有2个以上乙烯基,优选的, 所述含乙烯基官能团的硅氧烷树脂包含直链、支链或网状结构,优选的,所述含乙烯基官能团的硅氧烷树脂的数均分子量(Mn)在10 5g/mol以下,优选为1×10 2g/mol~1×10 5g/mol,更优选的为1×10 2g/mol~1×10 4g/mol。 Further, the vinyl functional group-containing siloxane resin contains more than two vinyl groups per molecule. Preferably, the vinyl functional group-containing siloxane resin includes a linear, branched, or network structure Preferably, the vinyl functional group-containing siloxane resin has a number average molecular weight (Mn) of 10 5 g/mol or less, preferably 1×10 2 g/mol to 1×10 5 g/mol, more preferably The range is from 1×10 2 g/mol to 1×10 4 g/mol.
更优选的,所述含乙烯基官能团的硅氧烷树脂的每个分子中含有1个以上苯基。More preferably, the vinyl functional group-containing siloxane resin contains more than one phenyl group per molecule.
在一些实施方案中,所述含乙烯基官能团的硅氧烷树脂包含RSiO 3/2单元、RR'SiO 2/2单元、RR'R"SiO 1/2单元和SiO 4/2单元中的任意一种或多种的组合,其中R、R'、R"为取代的或未取代的单价烃基。 In some embodiments, the vinyl functional group-containing siloxane resin comprises any of RSiO 3/2 units, RR′SiO 2/2 units, RR′R″SiO 1/2 units, and SiO 4/2 units One or more combinations in which R, R', R" are substituted or unsubstituted monovalent hydrocarbon groups.
在一些实施方案中,所述含Si-H官能团的硅氧烷树脂包含RSiO 3/2单元、RR'SiO 2/2单元、RR'R"SiO 1/2单元和SiO 4/2单元中的任意一种或多种的组合,其中R、R'、R"为取代的或未取代的单价烃基。 In some embodiments, the Si-H functional group-containing siloxane resin comprises RSiO 3/2 units, RR′SiO 2/2 units, RR′R″SiO 1/2 units, and SiO 4/2 units. Any one or more combinations, wherein R, R', R" are substituted or unsubstituted monovalent hydrocarbon groups.
更为具体的,在一些实施例中,所述含乙烯基官能团的硅氧烷树脂的结构如下:More specifically, in some embodiments, the structure of the vinyl functional group-containing siloxane resin is as follows:
Figure PCTCN2018124689-appb-000001
Figure PCTCN2018124689-appb-000001
在一些实施方案中,所述含乙烯基官能团的硅氧烷树脂可以为(R 1[OR 2]SiO)m-(R 3CH 2=CH-SiO)n,其中R 1、R 2、R 3可均为乙烯基,m、n可以为0或一个正整数。 In some embodiments, the vinyl functional group-containing siloxane resin may be (R 1 [OR 2 ]SiO)m-(R 3 CH 2 =CH-SiO)n, where R 1 , R 2 , R 3 can be vinyl, m and n can be 0 or a positive integer.
在一些实施方案中,所述含乙烯基官能团的硅氧烷树脂可以选自含有乙烯基的POSS。In some embodiments, the vinyl functional group-containing silicone resin may be selected from vinyl-containing POSS.
进一步地,在所述有机硅组合物中,含乙烯基官能团的硅氧烷树脂占非溶剂组分的含量可以为1wt%~90wt%,优选为10wt%~70wt%,尤其优选为20wt%~50wt%。Further, in the silicone composition, the content of the non-solvent component of the silicone resin containing vinyl functional groups may be 1 wt% to 90 wt%, preferably 10 wt% to 70 wt%, and particularly preferably 20 wt% to 50wt%.
在本申请中,所述含Si-H官能团的硅氧烷树脂的每个分子中含有2个以上Si-H基,优选的,所述含Si-H官能团的硅氧烷树脂包含直链、支链或网状结构;优选的,所述含Si-H官能团的硅氧烷树脂的数均分子量低于10 5g/mol,优选为10 2g/mol~10 5g/mol,更优选的为1×10 2g/mol~1×10 4g/mol。 In the present application, the Si-H functional group-containing siloxane resin contains two or more Si-H groups per molecule. Preferably, the Si-H functional group-containing siloxane resin contains a linear, a branched or network structure; preferably, the silicone resin containing Si-H functional groups of the number average molecular weight below 10 5 g / mol, preferably from 10 2 g / mol ~ 10 5 g / mol, more preferably The range is from 1×10 2 g/mol to 1×10 4 g/mol.
更优选的,所述含Si-H官能团的硅氧烷树脂的每个分子中含有1个以上苯基。More preferably, the Si-H functional group-containing siloxane resin contains more than one phenyl group per molecule.
本申请中所述含Si-H官能团的硅氧烷树脂内,除与硅键合的氢原子以外的与硅键合的基团可以是除烯基以外的任选被取代的一价烃基,例如甲基、乙基、丙基或类似的烷基;苯基、甲苯基、二甲苯基、萘基或类似的芳基;苯甲基、苯乙基或类似的芳烷基;3-氯丙基、3,3,3-三氟丙基或类似的卤代烷基,但优选的,在该组分的一个分子中有至少一个芳基,特别是苯基,尤其是两个以上苯基。该组分的分子结构没有特殊的限制,它可以具有直链的、支化的或部分支化的直链、环状或树枝状的分子结构。在一些实施案例中,所述含Si-H官能团的硅氧烷树脂可以由以下物质代表:由式(CH 3) 2HSiO 1/2和C 6H 5SiO 3/2的单元组成的有机聚硅氧烷树脂;由式(CH 3) 2HSiO 1/2、(CH 3) 3SiO 1/2和式C 6H 5SiO 3/2的单元组成的有机聚硅氧烷树脂;由式(CH 3) 2HSiO 1/2和SiO 4/2的单元组成的有机聚硅氧烷树脂;由式(CH 3) 2HSiO 1/2、(CH 3) 2SiO 2/2和SiO 4/2的单元组成的有机聚硅氧烷树脂,等等。 In the silicone resin containing Si-H functional groups described in this application, the silicon-bonded groups other than silicon-bonded hydrogen atoms may be optionally substituted monovalent hydrocarbon groups other than alkenyl groups, For example, methyl, ethyl, propyl or similar alkyl; phenyl, tolyl, xylyl, naphthyl or similar aryl; benzyl, phenethyl or similar aralkyl; 3-chloro Propyl, 3,3,3-trifluoropropyl or similar haloalkyl, but preferably, there is at least one aryl group in one molecule of this component, especially phenyl, especially more than two phenyl groups. The molecular structure of this component is not particularly limited, and it may have a linear, branched, or partially branched linear, cyclic, or dendritic molecular structure. In some embodiments, the Si-H functional group-containing siloxane resin may be represented by the following substance: an organic polymer composed of units of formula (CH 3 ) 2 HSiO 1/2 and C 6 H 5 SiO 3/2 Silicone resin; organopolysiloxane resin composed of units of formula (CH 3 ) 2 HSiO 1/2 , (CH 3 ) 3 SiO 1/2 and formula C 6 H 5 SiO 3/2 ; by formula ( CH 3 ) 2 HSiO 1/2 and SiO 4/2 organopolysiloxane resin; composed of the formula (CH 3 ) 2 HSiO 1/2 , (CH 3 ) 2 SiO 2/2 and SiO 4/2 The unit is composed of organopolysiloxane resin, etc.
更为具体的,在一些实施例中,所述含Si-H官能团的硅氧烷树脂的结构如下:More specifically, in some embodiments, the structure of the Si-H functional group-containing siloxane resin is as follows:
Figure PCTCN2018124689-appb-000002
Figure PCTCN2018124689-appb-000002
其中,p为大于或等于1的整数。Where p is an integer greater than or equal to 1.
在一些实施方案中,所述含Si-H官能团的硅氧烷树脂亦可选自含有Si-H官能团的POSS。In some embodiments, the Si-H functional group-containing silicone resin may also be selected from POS containing Si-H functional groups.
在所述有机硅组合物中,含Si-H官能团的硅氧烷树脂的含量为1wt%~90wt%,优选为2wt%~50wt%,尤其优选为5wt%~30wt%。In the silicone composition, the content of the Si-H functional group-containing siloxane resin is 1 wt% to 90 wt%, preferably 2 wt% to 50 wt%, and particularly preferably 5 wt% to 30 wt%.
进一步地,在本申请中,所述含Si-H官能团的硅氧烷树脂内Si-H基的含量在0.1mol%~100mol%,优选在0.2mol%~95mol%,尤其优选在0.5mol%~90mol%。Further, in the present application, the content of Si-H groups in the Si-H functional group-containing silicone resin is 0.1 mol% to 100 mol%, preferably 0.2 mol% to 95 mol%, particularly preferably 0.5 mol% ~90mol%.
进一步地,在本申请中,所述含Si-H官能团的硅氧烷树脂内Si-H基与所述含乙烯基官能团的硅氧烷树脂内乙烯基的摩尔比为0.02~50:1,优选在0.1~10:1,尤其优选在0.5~5:1。Further, in this application, the molar ratio of Si-H groups in the Si-H functional group-containing siloxane resin to vinyl groups in the vinyl functional group-containing siloxane resin is 0.02-50:1, It is preferably 0.1 to 10:1, and particularly preferably 0.5 to 5:1.
进一步地,关于这种含Si-H官能团的硅氧烷树脂的选取和制备工艺可参考CN101151328A、CN102464887A等等。Further, regarding the selection and preparation process of this Si-H functional group-containing siloxane resin, reference may be made to CN101151328A, CN102464887A, and so on.
进一步地,所述硅氧烷树脂(含乙烯基官能团的硅氧烷树脂、含Si-H官能团的硅氧烷树脂)是一类可溶于诸如苯、甲苯、二甲苯、庚烷和类似物的液态烃、酮、脂、光刻胶用溶剂或可溶于诸如低粘度的环状聚二有机硅氧烷和直链聚二有机硅氧烷的液态有机硅化合物,其可包括由R 3 3SiO 1/2代表的单官能(M)单元、R 3 2SiO 2/2代表的双官能(D)单元、R 3SiO 3/2代表的三官能(T)单元和由SiO 4/2代表的四官能(Q)单元。R 3代表单价的有机基团,其为取代的或未取代的单价烃基。其中,所述单价未取代的烃基可选自但不限于如下基团:烷基,诸如甲基、乙基、 丙基、戊基、辛基、十一烷基和十八烷基;链烯基,诸如乙烯基、烯丙基、丁烯基、戊烯基和己烯基;脂环族基团,诸如环己基和环己烯基乙基;炔基,诸如乙炔基、丙炔基和丁炔基;环烷基诸如环戊基和环己基;以及,芳族基团,诸如乙基苄基、萘基、苯基、甲苯基、二甲苯基、苄基、苯乙烯基、1-苯乙基和2-苯乙基,可选地为苯基。可存在于R 3上的非活性取代基包括但不限于卤素和氰基。作为取代的烃基的单价有机基团可选自但不限于以下基团:卤化烷基,如氯甲基、3-氯丙基和3,3,3-三氟丙基、氟甲基、2-氟丙基、3,3,3-三氟丙基、4,4,4-三氟丁基、4,4,4,3,3-五氟丁基、5,5,5,4,4,3,3-七氟戊基、6,6,6,5,5,4,4,3,3-九氟己基和8,8,8,7,7-五氟辛基等。优选的,本申请的硅氧烷树脂中单价未取代的烃基为乙烯基,特别是所述硅氧烷树脂的每个分子中含有2个以上苯基。关于本申请中硅氧烷树脂的选取和制备工艺可参考US6,124,407、US2,676,182、U2),774,310、US6,124,407等。 Further, the silicone resin (silicone resin containing vinyl functional groups, silicone resin containing Si-H functional groups) is a class of soluble materials such as benzene, toluene, xylene, heptane and the like Liquid hydrocarbons, ketones, greases, solvents for photoresists or liquid organosilicon compounds soluble in low viscosity cyclic polydiorganosiloxanes and linear polydiorganosiloxanes, which may include R 3 3 monofunctional (M) units represented by SiO 1/2 , bifunctional (D) units represented by R 3 2 SiO 2/2 , trifunctional (T) units represented by R 3 SiO 3/2 and SiO 4/2 Representative tetrafunctional (Q) unit. R 3 represents a monovalent organic group, which is a substituted or unsubstituted monovalent hydrocarbon group. Wherein, the monovalent unsubstituted hydrocarbon group may be selected from but not limited to the following groups: alkyl groups such as methyl, ethyl, propyl, pentyl, octyl, undecyl and octadecyl; alkenes Groups such as vinyl, allyl, butenyl, pentenyl and hexenyl; alicyclic groups such as cyclohexyl and cyclohexenylethyl; alkynyl groups such as ethynyl, propynyl and butylene Alkynyl; cycloalkyl such as cyclopentyl and cyclohexyl; and, aromatic groups such as ethylbenzyl, naphthyl, phenyl, tolyl, xylyl, benzyl, styryl, 1-benzene Ethyl and 2-phenethyl, optionally phenyl. Non-reactive substituents that may be present on R 3 include but are not limited to halogen and cyano. The monovalent organic group as a substituted hydrocarbon group may be selected from but not limited to the following groups: halogenated alkyl groups such as chloromethyl, 3-chloropropyl and 3,3,3-trifluoropropyl, fluoromethyl, 2 -Fluoropropyl, 3,3,3-trifluoropropyl, 4,4,4-trifluorobutyl, 4,4,4,3,3-pentafluorobutyl, 5,5,5,4, 4,3,3-heptafluoropentyl, 6,6,6,5,5,4,4,3,3-nonafluorohexyl, 8,8,8,7,7-pentafluorooctyl, etc. Preferably, the monovalent unsubstituted hydrocarbon group in the silicone resin of the present application is a vinyl group, in particular, the silicone resin contains more than two phenyl groups per molecule. For the selection and preparation process of the silicone resin in this application, reference may be made to US 6,124,407, US 2,676,182, U2), 774,310, US 6,124,407, etc.
所述氢化硅烷化催化剂的用量应足以促进本申请有机硅组合物的固化。这些氢化硅烷化催化剂是本领域中已知的且是商业上可获得的,例如可选自但不限于如下物质:铂族金属:铂、铑、钌、钯、锇或铱金属或其有机金属化合物及其组合。更为具体的,其可以选自铂黑、化合物诸如氯铂酸、氯铂酸六水合物、和一元醇的反应产物、双(乙基乙酰乙酸)铂、双(乙酰丙酮酸)铂、二氯化铂和所述化合物与烯烃或低分子量的有机聚硅氧烷或在基质或核壳类型结构中微囊化的铂化合物的复合物。铂与低分子量的有机聚硅氧烷的复合物,包括具有铂的1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷复合物。这些复合物可于树脂基质中微囊化。可选地,催化剂可包括具有铂的1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷复合物。这些氢化硅烷化催化剂可参考CN1863875A(说明书第0020-0021段)、US 3,159,601、U1),220,972、U1),296,291、U1),419,593号、U1),516,946、U1),814,730、U1),989,668、U2),784,879、U3),036,117、U3),175,325号、EP 0 347 895 B、U2),766,176、U3),017,654等文献。和/或,至少一个UV活性Pt催化剂,可参考US8,314,200。The amount of the hydrosilylation catalyst should be sufficient to promote the curing of the silicone composition of the present application. These hydrosilylation catalysts are known in the art and are commercially available, for example, can be selected from, but not limited to, the following: platinum group metals: platinum, rhodium, ruthenium, palladium, osmium or iridium metals or their organic metals Compounds and their combinations. More specifically, it may be selected from platinum black, compounds such as chloroplatinic acid, the reaction product of chloroplatinic acid hexahydrate, and monohydric alcohol, bis(ethylacetoacetate) platinum, bis(acetylpyruvate) platinum, di A complex of platinum chloride and the compound with an olefin or a low molecular weight organopolysiloxane or a platinum compound microencapsulated in a matrix or core-shell type structure. The complex of platinum and low molecular weight organopolysiloxane includes 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex with platinum. These complexes can be microencapsulated in a resin matrix. Alternatively, the catalyst may include a 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex with platinum. These hydrosilylation catalysts can refer to CN1863875A (paragraph 0020-0021 of the specification), US 3,159,601, U1), 220,972, U1), 296,291, U1), 419,593, U1), 516,946, U1), 814,730, U1), 989,668 , U2), 784,879, U3), 036,117, U3), 175,325, EP 0 347 895 B, U2), 766,176, U3), 017,654 and other documents. And/or, for at least one UV active Pt catalyst, reference may be made to US 8,314,200.
在一些实施案例中,基于所述有机硅组合物的重量,氢化硅烷化催化剂的量可以为以下范围的铂族金属:0.1ppm至1,0000ppm,可选地为1ppm至1000ppm,且可选地为10ppm至100ppm.在本申请中,所述的溶剂可以是适用的任何类型,例如水、有机溶剂或两者的混合物,优选自有机溶剂,例如可选自但不限于正己烷、甲苯、氯仿、二氯甲烷、乙醇、丙酮、2-丁酮、4-甲基-2-戊酮、脂、光刻胶用溶剂(例如PGME、PGMEA)等,用以与该组合物中的其余材料组合为具有良好流动性的液体,特别是均相溶液。In some embodiments, based on the weight of the silicone composition, the amount of the hydrosilylation catalyst may be a platinum group metal in the following range: 0.1 ppm to 1.000 ppm, optionally 1 ppm to 1000 ppm, and optionally 10ppm to 100ppm. In this application, the solvent may be of any suitable type, such as water, organic solvents or a mixture of the two, preferably from organic solvents, such as but not limited to n-hexane, toluene, chloroform , Dichloromethane, ethanol, acetone, 2-butanone, 4-methyl-2-pentanone, grease, photoresist solvents (eg PGME, PGMEA), etc., to be combined with the rest of the materials in the composition It is a liquid with good fluidity, especially a homogeneous solution.
在所述有机硅组合物中,所述溶剂的含量可以为约10wt%~90wt%,优选为20wt%~80wt%,尤其优选为30wt%~70wt%,特别是所述溶剂在常压下的沸点为60℃~250℃。In the silicone composition, the content of the solvent may be about 10wt% to 90wt%, preferably 20wt% to 80wt%, particularly preferably 30wt% to 70wt%, especially the solvent under normal pressure The boiling point is 60℃~250℃.
在所述有机硅组合物中,所述稀释剂的含量可以为约10wt%~90wt%,优选为20wt%~80wt%,尤其优选为30wt%~70wt%。In the silicone composition, the content of the diluent may be about 10 wt% to 90 wt%, preferably 20 wt% to 80 wt%, and particularly preferably 30 wt% to 70 wt%.
在一些实施方案中,所述稀释剂包括至少一种反应型稀释剂,优选的,所述反应型稀释剂采用能够参与硅氢加成反应的单乙烯基化合物、含有一个Si-H官能团的化合物或者含有一个Si-H官能团的单乙烯基化合物。尤其优选的,所述反应型稀释剂可选自单乙烯基硅烷化合物和/或单烯丙基硅烷化合物。优选的,所述稀释剂于室温下的粘度小于100cPs,尤其优选小于50cPs,尤其优选小于10cPs。。通过采用所述的反应型稀释剂,可避免有机溶剂的使用,减少环境污染,以及还可提升所述有机硅组合物中各组分的相容性。In some embodiments, the diluent includes at least one reactive diluent. Preferably, the reactive diluent uses a monovinyl compound capable of participating in the hydrosilylation reaction and a compound containing one Si-H functional group Or a monovinyl compound containing a Si-H functional group. Particularly preferably, the reactive diluent may be selected from monovinylsilane compounds and/or monoallylsilane compounds. Preferably, the viscosity of the diluent at room temperature is less than 100 cPs, particularly preferably less than 50 cPs, particularly preferably less than 10 cPs. . By using the reactive diluent, the use of organic solvents can be avoided, environmental pollution can be reduced, and the compatibility of each component in the silicone composition can also be improved.
更为具体的,适于作为所述稀释剂的单乙烯基化合物可以参考US6,333,375B等文献。例如可选自一种或多种芳族乙烯基化合物,典型的如苯乙烯、α-甲基苯乙烯、2-甲基苯乙烯、甲基苯乙烯、甲基苯乙烯、4-二异丙基苯乙烯、二甲基苯乙烯、4-叔丁基苯乙烯,5-t-丁基-2甲基苯乙烯、氯苯、苯乙烯和苯乙烯单氟氯等。尤其可优选采用苯乙烯等。More specifically, the monovinyl compound suitable as the diluent can refer to US 6,333,375B and other documents. For example, it can be selected from one or more aromatic vinyl compounds, typically such as styrene, α-methylstyrene, 2-methylstyrene, methylstyrene, methylstyrene, 4-diisopropyl Styrene, dimethylstyrene, 4-tert-butylstyrene, 5-t-butyl-2methylstyrene, chlorobenzene, styrene and styrene monofluorochloride. In particular, styrene or the like can be preferably used.
又及,所述的单乙烯基化合物的聚合单体分子内亦可以包含至少一个具有杂原子的极性基团,例如可以是包含胺基的乙烯基单体、包含羟基的乙烯基单体、包含氧的乙烯基单体,尤其可优选前两者。这些具有含杂原子的极性基团的乙烯基单体可单独或者组合使用。Furthermore, the polymerized monomer of the monovinyl compound may also contain at least one polar group having a hetero atom, for example, it may be a vinyl monomer containing an amine group, a vinyl monomer containing a hydroxyl group, Among the oxygen-containing vinyl monomers, the first two are particularly preferred. These vinyl monomers having a polar group containing a hetero atom may be used alone or in combination.
进一步地,所述包含胺基的乙烯基单体是可聚合的单体,其分子中的至少一个胺基为伯胺(例如丙烯酰胺、甲基丙烯酰胺、对氨基苯、氨甲基(甲基)丙烯酸氨基乙基(甲基)丙烯酸氨基丙基(甲基)丙烯酸氨基(甲基)丙烯酸丁酯)、仲胺(例如可参阅JP130355/86A,例如苯胺基苯基丁二烯单取代的(甲基)丙烯酰胺如N-甲基(甲基)丙烯酰胺、N-乙基(甲基)丙烯酰胺、N-羟甲基丙烯酰胺、N-(4-苯胺基苯基)甲基丙烯酰胺)或叔胺(如N,N-二取代氨基烷基丙烯酸酯、N,N-二烷基氨基烷基丙烯酰胺、N,N-二取代的氨基芳香族乙烯基化合物和含乙烯基的吡啶化合物),尤其优选为叔胺。更为具体的,包含丙烯酸基或甲基丙烯酸基的N,N-二取代氨基烷基丙烯酸酯可选自N,N-二甲基氨基甲基(甲基)丙烯酸、N,N-二甲基氨基乙基(甲基)丙烯酸、N,N-二甲基氨基丙基(甲基)丙烯酸、N,N-二甲基氨基丁基(甲基)丙烯酸、N,N-二乙基氨基乙基(甲基)丙烯酸、N,N-二乙基氨基丙基(甲基)丙烯酸、N,N-二乙基氨基丁基(甲基)丙烯酸,N-甲基-N-乙基氨基乙基(甲基)丙烯酸、N,N-二丙基氨基乙基(甲基)丙烯酸、N,N-二丁基氨基乙基(甲基)丙烯酸、N,N-二丁基氨基丙基(甲基)丙烯酸、N,N-二丁基氨基丁基(甲基)丙烯酸、N,N-二己基氨基乙基(甲基)丙烯酸、N,N-二辛基氨基乙基(甲基)丙烯酸和丙烯酰吗啉(acryloylmorpholine)。其中,N,N-二(甲基)丙烯酸、N,N-二(甲基)丙烯酸、N,N-二丙基氨基乙基(甲基)丙烯酸、N,N-二辛基氨基乙基(甲基)丙烯酸和N-甲基-N-乙基氨基乙酯(甲基)丙烯酸酯尤为优选。又例如,所述N,N-二取代氨基芳族乙烯基化合物可以包括苯乙烯衍生物,例如N,N-二甲基氨基乙基苯乙烯、N,N-二乙基氨基乙基苯乙烯、N,N-二丙基氨基乙基苯乙烯和N,N-二辛基氨基乙基苯乙烯。又例如,含乙烯基的吡啶化合物可以包括乙烯基吡啶、4-乙烯基吡啶、5-甲基-2-乙烯基吡啶、5-乙基-2-乙烯基吡啶,尤其优选为前两者。Further, the vinyl monomer containing an amine group is a polymerizable monomer, and at least one amine group in the molecule is a primary amine (such as acrylamide, methacrylamide, p-aminobenzene, aminomethyl (methyl Group) Acrylic acid aminoethyl (meth)acrylic acid aminopropyl (meth)acrylic acid amino (meth)acrylic acid butyl ester), secondary amine (for example, see JP130355/86A, for example, anilinophenyl butadiene monosubstituted (Meth) acrylamide such as N-methyl (meth) acrylamide, N-ethyl (meth) acrylamide, N-hydroxymethyl acrylamide, N-(4-anilinophenyl) methacryl Amides) or tertiary amines (such as N,N-disubstituted aminoalkyl acrylates, N,N-dialkylaminoalkyl acrylamides, N,N-disubstituted amino aromatic vinyl compounds and vinyl-containing Pyridine compounds), especially tertiary amines. More specifically, the N,N-disubstituted aminoalkyl acrylate containing an acrylic group or a methacrylic group may be selected from N,N-dimethylaminomethyl (meth)acrylic acid, N,N-dimethyl Aminoethyl (meth)acrylic acid, N,N-dimethylaminopropyl (meth)acrylic acid, N,N-dimethylaminobutyl (meth)acrylic acid, N,N-diethylamino Ethyl (meth)acrylic acid, N,N-diethylaminopropyl (meth)acrylic acid, N,N-diethylaminobutyl (meth)acrylic acid, N-methyl-N-ethylamino Ethyl (meth)acrylic acid, N,N-dipropylaminoethyl (meth)acrylic acid, N,N-dibutylaminoethyl (meth)acrylic acid, N,N-dibutylaminopropyl (Meth)acrylic acid, N,N-dibutylaminobutyl (meth)acrylic acid, N,N-dihexylaminoethyl (meth)acrylic acid, N,N-dioctylaminoethyl (meth) ) Acrylic acid and acryloylmorpholine. Among them, N,N-di(meth)acrylic acid, N,N-di(meth)acrylic acid, N,N-dipropylaminoethyl (meth)acrylic acid, N,N-dioctylaminoethyl (Meth)acrylic acid and N-methyl-N-ethylaminoethyl (meth)acrylate are particularly preferred. For another example, the N,N-disubstituted amino aromatic vinyl compound may include styrene derivatives, such as N,N-dimethylaminoethylstyrene, N,N-diethylaminoethylstyrene , N,N-dipropylaminoethylstyrene and N,N-dioctylaminoethylstyrene. As another example, the vinyl-containing pyridine compound may include vinyl pyridine, 4-vinyl pyridine, 5-methyl-2-vinyl pyridine, 5-ethyl-2-vinyl pyridine, and the former two are particularly preferred.
进一步地,所述含羟基的乙烯基单体可为包含至少一个伯羟基、仲羟基或叔羟基的可聚合的单体。这些含羟基的乙烯基单体包括例如含有羟基的不饱和羧酸单体、含羟基的乙烯基醚单体和含羟基的乙烯基酮单体,优选为含羟基的不饱和羧酸单体。含羟基的不饱和羧酸单体的例子包括丙烯酸、甲基丙烯酸、衣康酸、富马酸和马来酸的衍生物(如酯、酰胺、酸酐)。其中,丙烯酸和甲基丙烯酸酯类化合物尤为优选。更为具体的,含羟基的乙烯基单体可以包括羟甲基(甲基)丙烯酸,甲基丙烯酸羟丙酯(甲基)、(甲基)丙烯酸羟丙基(甲基)丙烯酸、(甲基)丙烯酸-2-羟丙基,3-苯氧基-2-羟丙基(甲基)丙烯酸甘油酯(甲基)丙烯酸丁酯(甲基)丙烯酸,2-氯-3-羟丙基(甲基)丙烯酸,羟己基(甲基)丙烯酸酯,羟辛基(甲基)丙烯酸、羟甲基(甲基)丙烯酰胺、2-羟丙基(甲基)丙烯酰胺、(甲基)丙烯酰胺,羟丙基二(乙二醇)衣康酸、衣康酸二(丙二醇)、双(2-羟丙基)双(2-羟乙基)衣康酸、衣康酸、双(2-羟基乙基)酯、双马来酸(2-羟乙基),甲基乙烯基醚,羟甲基乙烯酮与烯丙醇。其中,羟甲基(甲基)丙烯酸羟乙酯、(甲基)丙烯酸羟丙酯、(甲基)丙烯酸、丙烯酸羟丙基(甲 基),3-苯氧基-2-羟丙基(甲基)丙烯酸甘油酯(甲基)丙烯酸丁酯(甲基)丙烯酸(甲基)丙烯酸羟己基,羟丙基(甲基)丙烯酸、羟甲基(甲基)丙烯酰胺,2-羟丙基(甲基)丙烯酰胺和羟丙基(甲基)丙烯酰胺是首选。Further, the hydroxyl group-containing vinyl monomer may be a polymerizable monomer containing at least one primary hydroxyl group, secondary hydroxyl group or tertiary hydroxyl group. These hydroxyl group-containing vinyl monomers include, for example, hydroxyl group-containing unsaturated carboxylic acid monomers, hydroxyl group-containing vinyl ether monomers and hydroxyl group-containing vinyl ketone monomers, preferably hydroxyl group-containing unsaturated carboxylic acid monomers. Examples of hydroxyl-containing unsaturated carboxylic acid monomers include acrylic acid, methacrylic acid, itaconic acid, fumaric acid, and maleic acid derivatives (such as esters, amides, anhydrides). Among them, acrylic and methacrylate compounds are particularly preferred. More specifically, the hydroxyl-containing vinyl monomer may include hydroxymethyl (meth)acrylic acid, hydroxypropyl methacrylate (meth), hydroxypropyl (meth)acrylate (meth)acrylic acid, (meth) ) Acrylic acid 2-hydroxypropyl, 3-phenoxy-2-hydroxypropyl (meth)acrylic acid glyceride (meth)acrylic acid butyl (meth)acrylic acid, 2-chloro-3-hydroxypropyl (Meth)acrylic acid, hydroxyhexyl (meth)acrylate, hydroxyoctyl (meth)acrylic acid, hydroxymethyl (meth)acrylamide, 2-hydroxypropyl (meth)acrylamide, (meth) Acrylamide, hydroxypropyl di (ethylene glycol) itaconic acid, itaconic acid di (propylene glycol), bis (2-hydroxypropyl) bis (2-hydroxyethyl) itaconic acid, itaconic acid, bis ( 2-hydroxyethyl) ester, bismaleic acid (2-hydroxyethyl), methyl vinyl ether, hydroxymethyl ketene and allyl alcohol. Among them, hydroxymethyl (meth) acrylate, hydroxypropyl (meth) acrylate, (meth) acrylic acid, hydroxypropyl (meth) acrylate, 3-phenoxy-2-hydroxypropyl ( Glycerin methacrylate (butyl) methacrylate (meth)acrylic acid (meth)acrylic acid hydroxyhexyl, hydroxypropyl (meth)acrylic acid, hydroxymethyl (meth)acrylamide, 2-hydroxypropyl (Meth) acrylamide and hydroxypropyl (meth) acrylamide are preferred.
进一步地,所述含氧乙烯基单体可包括含烷氧基的乙烯基单体(参阅JP188356/95A),如三甲氧基乙烯基硅烷,三乙氧基乙烯基硅烷、6-甲氧基硅烷基-1,2-己烯,对三甲氧甲矽烷基苯乙烯,3-三甲氧基硅丙酯和3-三乙氧基甲硅烷基丙烯酸丙酯,等等。Further, the oxygen-containing vinyl monomer may include an alkoxy-containing vinyl monomer (see JP188356/95A), such as trimethoxyvinylsilane, triethoxyvinylsilane, 6-methoxy Silyl-1,2-hexene, p-trimethoxysilyl styrene, 3-trimethoxysilyl propyl and 3-triethoxysilyl acrylate, etc.
在一些实施方案之中,所述的有机硅组合物还可包含添加剂,例如抑制剂,小分子硅烷(可含有或不含乙烯或Si-H功能基团),粘接促进剂,热或UV固化的环氧/丙烯酸/聚氨酯/双马来酰亚胺等树脂,无机填充剂,流变改性剂,增粘剂,润湿剂,消泡剂,流平剂,染料和荧光粉防沉淀剂(例如信越DM-30、Sanwell SH系列LED荧光粉防沉剂等)中的任一种或两种以上的组合。In some embodiments, the silicone composition may further include additives such as inhibitors, small molecular silanes (which may or may not contain ethylene or Si-H functional groups), adhesion promoters, heat or UV Cured epoxy/acrylic/polyurethane/bismaleimide and other resins, inorganic fillers, rheology modifiers, tackifiers, wetting agents, defoamers, leveling agents, dyes and phosphors to prevent precipitation Any one or a combination of two or more agents (such as Shin-Etsu DM-30, Sanwell SH series LED phosphor anti-settling agent, etc.).
其中,所述抑制剂,即硅氢加成反应抑制剂是指能够导致硅氢加成反应不良的物质,参考CN1863875A(第0025段)等,其可选自炔醇类化合物、烯-炔化合物、硅氧烷或苯并三唑及其他氢化硅烷反应抑制剂。例如,炔醇类化合物抑制剂可选自2-苯基-3-丁炔-2-醇、2-甲基-3-丁炔-2-醇、3,5-二甲基-1-己炔-3-醇等;烯-炔化合物可选自诸如3-甲基-3-戊烯-1-炔等,硅氧烷可选自1,3,5,7-四甲基-1,3,5,7-四己烯基环四硅氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷等。其中优选炔醇类化合物,尤其优选2-苯基-3-丁炔-2-醇。Wherein, the inhibitor, that is, a hydrosilylation reaction inhibitor refers to a substance that can cause a poor hydrosilylation reaction, refer to CN1863875A (paragraph 0025), etc., which can be selected from the group consisting of acetylene alcohol compounds and ene-yne compounds , Siloxane or benzotriazole and other hydrosilane reaction inhibitors. For example, the acetylene alcohol compound inhibitor may be selected from 2-phenyl-3-butyn-2-ol, 2-methyl-3-butyn-2-ol, 3,5-dimethyl-1-hexyl Alkyn-3-ol and the like; the ene-yne compound can be selected from 3-methyl-3-pentene-1-yne and the like, and the siloxane can be selected from 1,3,5,7-tetramethyl-1, 3,5,7-tetrahexenylcyclotetrasiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, etc. Among them, acetylene alcohol compounds are preferred, and 2-phenyl-3-butyn-2-ol is particularly preferred.
其中,所述增粘剂或粘结促进剂可以选自正硅酸乙酯、乙烯基三甲氧基硅烷、硼酸正丁酯、硼酸异丙酯、异辛酸钛、异辛酸锆、钛酸正丁酯、钛酸异丙酯、KH-171、KH-560和KH-570等(参考CN1863875A说明书第0026段等),市售途径可以获得的粘结促进剂可以为道康宁公司出品的JCR6101、JCR6101UP、EG6301、OE6336、JCR6175、JCR6109、Hipec4939、Hipec1-9224、OE6250、SR7010、SE9207、SE1740、SE9187L等,但不限于此。Wherein, the tackifier or adhesion promoter can be selected from ethyl orthosilicate, vinyl trimethoxysilane, n-butyl borate, isopropyl borate, titanium isooctanoate, zirconium isooctanoate, n-butyl titanate Ester, isopropyl titanate, KH-171, KH-560, KH-570, etc. (refer to paragraph 0026 of CN1863875A specification, etc.), the adhesion promoters available on the market can be JCR6101, JCR6101UP produced by Dow Corning, EG6301, OE6336, JCR6175, JCR6109, Hipec4939, Hipec1-9224, OE6250, SR7010, SE9207, SE1740, SE9187L, etc., but not limited thereto.
其中,所述无机填充剂可以是本领域中已知的且是商业上可获得的,例如可包括无机填料诸如二氧化硅,例如,胶态二氧化硅、火成二氧化硅、石英粉、氧化钛、玻璃、氧化铝、氧化锌,或其组合,填料可具有50纳米或更小的平均粒径且不会通过散射或吸收降低透光百分率。而关于诸如流变改性剂,润湿剂,消泡剂,流平剂,染料等,其定义是业界悉知的,并可从业界常用的相应材料内自由选取。Wherein, the inorganic filler may be known in the art and is commercially available, for example, may include inorganic fillers such as silica, for example, colloidal silica, fumed silica, quartz powder, Titanium oxide, glass, aluminum oxide, zinc oxide, or a combination thereof, the filler may have an average particle size of 50 nanometers or less and not reduce the percentage of light transmission through scattering or absorption. As for the definitions such as rheology modifiers, wetting agents, defoamers, leveling agents, dyes, etc., their definitions are well known in the industry and can be freely selected from the corresponding materials commonly used in the industry.
所述有机硅组合物可通过任何常规方法来制备,比如在合适的温度,例如室温下混合所有成分。The silicone composition can be prepared by any conventional method, such as mixing all ingredients at a suitable temperature, for example room temperature.
所述有机硅组合物的粘度为1,000mPa.s~500,000mPa.s,优选为5,000mPa.s~100,000mPa.s,尤其优选为7,000mPa.s~50,000mPa.s。The viscosity of the silicone composition is 1,000 mPa.s to 500,000 mPa.s, preferably 5,000 mPa.s to 100,000 mPa.s, and particularly preferably 7,000 mPa.s to 50,000 mPa.s.
在一些实施方案中,所述的荧光膜可由所述的荧光封装组合物半固化(预固化)形成,并优选为柔性薄膜。In some embodiments, the fluorescent film may be formed by semi-curing (pre-curing) the fluorescent encapsulating composition, and is preferably a flexible film.
进一步地,所述半固化的条件包括:加热通风条件,温度条件为20℃~200℃,优选为80℃~120℃,时间为10~100000s,优选为10~8000s。Further, the conditions of the semi-curing include heating and ventilating conditions, the temperature condition is 20° C. to 200° C., preferably 80° C. to 120° C., and the time is 10 to 100000 s, preferably 10 to 8000 s.
进一步地,使所述荧光膜完全固化的条件包括:通过加热或电磁辐照使所述荧光膜完全固化。Further, the conditions for completely curing the fluorescent film include: completely curing the fluorescent film by heating or electromagnetic irradiation.
进一步地,所述荧光膜的厚度可以极薄(例如可以达到10μm~10000μm左右,优选在20~500μm左右)。Further, the thickness of the fluorescent film may be extremely thin (for example, it may be about 10 μm to 10000 μm, preferably about 20 to 500 μm).
进一步地,所述荧光膜可以长期稳定保存。为避免其被外部环境污染,可以在其表面覆设离 型材料(如离型纸等),而在使用时将离型材料撕除。Further, the fluorescent film can be stored stably for a long time. In order to prevent it from being polluted by the external environment, the surface can be covered with release material (such as release paper, etc.), and the release material is torn off during use.
在一些实施方案,所述荧光膜的制备方法具体可以包括:In some embodiments, the method for preparing the fluorescent film may specifically include:
S1:制膜,将所述荧光封装组合物通过溶液成膜、流延涂覆、丝网/钢网印刷、旋转涂覆、(真空)挤出成膜等方式成膜;S1: film formation, film formation of the fluorescent encapsulation composition through solution formation, casting coating, screen/steel screen printing, spin coating, (vacuum) extrusion film formation, etc.;
S2:初步固化,形成表面不粘且可以揭起的预固化膜,即所述荧光膜,其具有压敏胶相似的特性。S2: Initial curing, forming a pre-cured film that is not sticky on the surface and can be peeled off, that is, the fluorescent film, which has similar characteristics as pressure-sensitive adhesive.
在一可选实施方案之中,所述步骤S2)可以包括:在辐射和/或加热通风条件下去除所述膜中的有机溶剂,从而形成所述预固化膜。其中采用的加热温度可以为20~200℃,优选为80~120℃,加热时间为10~100000秒,优选为10~8000秒。In an alternative embodiment, the step S2) may include: removing the organic solvent in the film under radiation and/or heating and ventilation conditions, thereby forming the pre-cured film. The heating temperature used therein may be 20 to 200°C, preferably 80 to 120°C, and the heating time is 10 to 100,000 seconds, preferably 10 to 8000 seconds.
在本申请的一些实施方案中,所述复合荧光胶膜的制备方法可以包括:将所述红外辐射膜与所述荧光膜贴合,形成所述的复合荧光胶膜。In some embodiments of the present application, the method for preparing the composite fluorescent adhesive film may include: bonding the infrared radiation film and the fluorescent film to form the composite fluorescent adhesive film.
所述红外辐射膜、所述荧光膜均可以是自支撑膜。Both the infrared radiation film and the fluorescent film may be self-supporting films.
在本申请的一些实施方案中,所述复合荧光胶膜中荧光膜与散热辐射膜是一体设置的。In some embodiments of the present application, in the composite fluorescent adhesive film, the fluorescent film and the heat radiation film are integrally provided.
在本申请的一些实施方案中,所述复合荧光胶膜的制备方法可以包括:将制备完成的所述红外辐射膜与制备完成的所述荧光膜贴合,形成所述的复合荧光胶膜。In some embodiments of the present application, the method for preparing the composite fluorescent adhesive film may include: pasting the prepared infrared radiation film and the prepared fluorescent film to form the composite fluorescent adhesive film.
其中,所述红外辐射膜的制备方法可以是业界已知的,例如可以包括:将组成所述基材的聚合物等溶于相应溶剂中形成溶液,并分散入无机散热填料,再将形成的分散液或浆料通过旋涂、喷涂、印刷、铸膜等多种方式制备形成薄膜。在此过程中,依据实际需求,还可包含干燥等工序。Wherein, the preparation method of the infrared radiation film may be known in the industry, for example, it may include: dissolving the polymer constituting the base material in a corresponding solvent to form a solution, and dispersing it into the inorganic heat dissipating filler, and then forming the The dispersion or slurry is prepared by spin coating, spray coating, printing, film casting and other methods to form a thin film. In this process, depending on the actual needs, it can also include drying and other processes.
在本申请的一些实施方案中,也可以采用如下的制备工艺制成所述复合荧光胶膜,例如:In some embodiments of the present application, the following preparation process may also be used to make the composite fluorescent adhesive film, for example:
制备所述荧光膜;Preparing the fluorescent film;
将组成所述基材的聚合物等溶于相应溶剂中形成溶液,并分散入无机散热填料,再将形成的分散液或浆料直接涂布在所述荧光膜上制备形成所述红外辐射膜。Dissolve the polymer constituting the base material in a corresponding solvent to form a solution, and disperse it into an inorganic heat-dissipating filler, and then directly coat the formed dispersion or slurry on the fluorescent film to form the infrared radiation film .
在一些实施方案中,所述复合荧光胶膜的厚度为0.010μm~10000μm,优选为0.05μm~5000μm,尤其优选为1μm~1000μm。In some embodiments, the thickness of the composite fluorescent adhesive film is 0.010 μm to 10000 μm, preferably 0.05 μm to 5000 μm, and particularly preferably 1 μm to 1000 μm.
本申请提供的复合荧光胶膜具有超薄、结构简单等特性,其在应用于封装半导体发光器件等时,可以在有效简化半导体发光器件的封装工艺的同时,提供高效的光转换效率,并大幅改善半导体发光器件的散热性能,保障其工作稳定性,延长其使用寿命,以及还可改善半导体发光器件的发光品质,包括且不限于其出光均匀性等。The composite fluorescent adhesive film provided by the present application has the characteristics of ultra-thin, simple structure, etc. When it is applied to the packaging of semiconductor light-emitting devices, etc., it can effectively simplify the packaging process of semiconductor light-emitting devices, while providing efficient light conversion efficiency, and greatly Improve the heat dissipation performance of the semiconductor light-emitting device, ensure its working stability, extend its service life, and also improve the light-emitting quality of the semiconductor light-emitting device, including but not limited to its light uniformity.
本申请的另一个方面还提供了一种半导体发光装置的封装方法,其包括:Another aspect of the present application also provides a packaging method of a semiconductor light emitting device, which includes:
提供所述的复合荧光胶膜,以及Provide the composite fluorescent adhesive film, and
将所述复合荧光胶膜中的荧光膜或散热辐射膜与所述半导体发光器件结合。The fluorescent film or the heat radiation film in the composite fluorescent glue film is combined with the semiconductor light emitting device.
在一些实施方案中,可以将所述复合荧光胶膜中的荧光膜或散热辐射膜与所述半导体发光器件的出光面固定结合。In some embodiments, the fluorescent film or the heat radiation film in the composite fluorescent glue film may be fixedly combined with the light emitting surface of the semiconductor light emitting device.
在一些实施方案中,提供了一类半导体发光装置的封装结构,其中的半导体发光器件具有两个以上出光面,并且所述复合荧光胶膜覆盖所述半导体发光器件的所有出光面。In some embodiments, a package structure of a semiconductor light emitting device is provided, in which the semiconductor light emitting device has more than two light emitting surfaces, and the composite fluorescent glue film covers all light emitting surfaces of the semiconductor light emitting device.
在一些实施方案中,所述半导体发光器件具有五个出光面。In some embodiments, the semiconductor light emitting device has five light exit surfaces.
在一些实施方案中,所述半导体发光器件具有一个出光面,所述出光面上覆盖有所述复合荧光胶膜。In some embodiments, the semiconductor light emitting device has a light exit surface, and the light exit surface is covered with the composite fluorescent glue film.
在一些实施方案中,所述的半导体发光装置的封装结构还包括环绕所述半导体发光器件设置的反光结构,所述出光面设置在所述反光结构围合形成的空间之内或者从所述反光结构围合形成的空间中露出。In some embodiments, the packaging structure of the semiconductor light emitting device further includes a reflective structure disposed around the semiconductor light emitting device, and the light exit surface is disposed within a space formed by or surrounded by the reflective structure The space enclosed by the structure is exposed.
在一些实施方案中,所述出光面设置在所述反光结构围合形成的空间内,而覆盖在所述出光面上的复合荧光胶膜的表面从所述反光结构围合形成的空间中露出。In some embodiments, the light exit surface is disposed in a space enclosed by the reflective structure, and the surface of the composite fluorescent adhesive film covering the light exit surface is exposed from the space enclosed by the reflective structure .
在一些实施方案中,所述反光结构的至少局部内壁是在远离半导体发光器件的方向上逐渐向外倾斜设置的,并且在所述半导体发光器件与所述反光结构内壁的倾斜面之间填充有透明封装胶。这样的设计可以进一步改善半导体发光器件的出光效率。In some embodiments, at least a part of the inner wall of the light reflecting structure is gradually inclined outward in a direction away from the semiconductor light emitting device, and the inclined surface between the semiconductor light emitting device and the inner wall of the light reflecting structure is filled Transparent encapsulant. Such a design can further improve the light extraction efficiency of the semiconductor light emitting device.
在一些实施方案中,所述出光面从所述反光结构围合形成的空间中露出,所述复合荧光胶膜连续覆盖所述出光面及所述反光结构的至少局部的表面。In some embodiments, the light exit surface is exposed from a space formed by the reflective structure, and the composite fluorescent glue film continuously covers at least a part of the surface of the light exit surface and the reflective structure.
在一些实施方案中,所述半导体发光器件为倒装结构的半导体发光器件。In some embodiments, the semiconductor light emitting device is a semiconductor light emitting device with a flip-chip structure.
本申请的另一个方面还提供了一种半导体发光装置的封装方法,其包括:Another aspect of the present application also provides a packaging method of a semiconductor light emitting device, which includes:
提供所述的复合荧光胶膜,以及Provide the composite fluorescent adhesive film, and
将所述复合荧光胶膜中的荧光膜或散热辐射膜与所述半导体发光器件的出光面固定结合。The fluorescent film or the heat radiation film in the composite fluorescent glue film is fixedly combined with the light emitting surface of the semiconductor light emitting device.
在本申请中,所述的“封装”(packaging)的涵义是本领域技术人员所知悉的,例如可以是:通过所述有机硅组合物在物品表面的某些区域固化形成保护层(coating),或者,将一个或多个物品的局部浸入由所述有机硅组合物形成的固化物内,或者,将一个或多个物品整体包埋密封(encapsulation)于由所述有机硅组合物形成的固化物内。In the present application, the meaning of "packaging" is known to those skilled in the art, for example, it may be that the silicone composition is cured in certain areas on the surface of the article to form a coating Or, partly immerse one or more articles in the cured product formed from the silicone composition, or encapsulate the one or more articles integrally formed on the silicone composition In the cured product.
进一步地,在一些更为具体的实施方案中,所述的封装方法可以包括如下步骤:Further, in some more specific embodiments, the packaging method may include the following steps:
1):贴膜,将所述复合荧光胶膜覆盖在LED等半导体发光器件的出光面上,通过在高温下和/或施加压力使所述荧光膜与半导体发光器件的出光面粘接;1): Sticking a film, covering the composite fluorescent glue film on the light emitting surface of a semiconductor light emitting device such as an LED, and bonding the fluorescent film to the light emitting surface of the semiconductor light emitting device under high temperature and/or applying pressure;
2):固化,将贴附有所述复合荧光胶膜的半导体发光器件置于恒温(加热,elevatedtemperature)环境中,并使所述荧光膜固化;2): curing, placing the semiconductor light emitting device with the composite fluorescent glue film on in a constant temperature (elevated temperature) environment, and curing the fluorescent film;
3):固化后处理,例如将固化后的产品切割为更小的单位。3): Post-curing treatment, for example, cutting the cured product into smaller units.
在一较为优选的实施方案之中,所述步骤1))可以包括:在向所述复合荧光胶膜施加压力的过程中,还至少对所述复合荧光胶膜进行加热处理,使其中的荧光膜粘接在所述半导体发光器件的出光面上。其中施加的压力大小可以为0.001Pa~10000Pa,优选为0.1Pa~1000Pa,施加压力时间为0.001~100000秒,优选为0.1~100秒。其中采用的加热温度可以为0~260℃,优选为50~200℃,尤其优选为80~150℃,时间优选为10~100000秒。In a more preferred embodiment, the step 1)) may include: during the process of applying pressure to the composite fluorescent adhesive film, at least the composite fluorescent adhesive film is further subjected to a heat treatment to make the fluorescence therein The film is adhered to the light emitting surface of the semiconductor light emitting device. The applied pressure may be 0.001 Pa to 10000 Pa, preferably 0.1 Pa to 1000 Pa, and the pressure applied time is 0.001 to 100,000 seconds, preferably 0.1 to 100 seconds. The heating temperature employed therein may be 0 to 260°C, preferably 50 to 200°C, particularly preferably 80 to 150°C, and the time is preferably 10 to 100,000 seconds.
当然,在步骤1))中,也可以采用其它方式替代对所述复合荧光胶膜的热处理,或者协同所述加热方式对所述复合荧光胶膜进行处理,这些方式可以包括辐照(例如远红外、紫外、可见光、微波,电子束中的任一种或几种),其中波长可为10 -8~10 3m,时间可以为10~100000秒。 Of course, in step 1)), other methods may be used to replace the heat treatment of the composite fluorescent adhesive film, or to process the composite fluorescent adhesive film in cooperation with the heating method, and these methods may include irradiation (such as remote Infrared, ultraviolet, visible light, microwave, any one or more of electron beam), where the wavelength can be 10 -8 to 10 3 m, and the time can be 10 to 100,000 seconds.
所述的半导体发光器件可以芯片级的LED芯片、也可以是晶圆级LED器件、LD(激光器)等等。The semiconductor light emitting device may be a chip-level LED chip, a wafer-level LED device, an LD (laser), or the like.
本申请实施例的另一个方面还提供了一种半导体发光装置,其包括半导体发光器件以及所述的复合荧光胶膜,所述复合荧光胶膜中的荧光膜或散热辐射膜与所述半导体发光器件结合。在一些实施方案中,所述复合荧光胶膜中的荧光膜或散热辐射膜与所述半导体发光器件的出光面固定结合。Another aspect of the embodiments of the present application further provides a semiconductor light-emitting device, which includes a semiconductor light-emitting device and the composite fluorescent glue film, and the fluorescent film or the heat-radiating radiation film in the composite fluorescent glue film emits light with the semiconductor Device bonding. In some embodiments, the fluorescent film or the heat radiation film in the composite fluorescent adhesive film is fixedly combined with the light exit surface of the semiconductor light emitting device.
本申请实施例的另一个方面还提供了一种半导体发光装置,其包括半导体发光器件以及所述的复合荧光胶膜,所述复合荧光胶膜中的荧光膜的完全固化体与所述半导体发光器件的出光面结合。Another aspect of the embodiments of the present application further provides a semiconductor light-emitting device, which includes a semiconductor light-emitting device and the composite fluorescent glue film, and the fully cured body of the fluorescent film in the composite fluorescent glue film emits light with the semiconductor The light emitting surface of the device is combined.
在本申请的一些实施方案中,所述荧光膜的下述剥离强度的百分率为30%以上;In some embodiments of the present application, the percentage of the following peel strength of the fluorescent film is more than 30%;
所述剥离强度的百分率=[75℃气氛下的剥离强度/25℃气氛下的剥离强度]×100Percentage of the peel strength=[Peel strength in 75°C atmosphere/Peel strength in 25°C atmosphere]×100
所述75℃气氛下的剥离强度:在温度75℃,以剥离角度180度、速度300mm/分钟将所述荧光膜从所述半导体发光器件的出光面剥离时的剥离强度;Peeling strength in the 75°C atmosphere: peeling strength when the fluorescent film is peeled from the light exit surface of the semiconductor light emitting device at a peeling angle of 180° and a speed of 300 mm/min at a temperature of 75°C;
所述25℃气氛下的剥离强度:在温度25℃,以剥离角度180度、速度300mm/分钟将所述荧光膜从所述半导体发光器件的出光面剥离时的剥离强度。Peeling strength in the 25°C atmosphere: Peeling strength when the fluorescent film is peeled from the light exit surface of the semiconductor light emitting device at a peeling angle of 180° and a speed of 300 mm/min at a temperature of 25°C.
进一步地,所述的完全固化体与所述半导体发光器件结合为一体,或者可以认为,所述的完全固化体以近乎不可剥离方式的方式牢固结合于所述半导体发光器件的出光面。Further, the completely cured body is integrated with the semiconductor light emitting device, or it can be considered that the completely cured body is firmly bonded to the light exit surface of the semiconductor light emitting device in a manner that is not peelable.
更进一步地,所述的荧光膜或荧光膜的完全固化体与所述半导体发光器件的出光面直接结合。进一步地,所述完全固化体的下述热失重率在5%以下(≤5wt%);Furthermore, the fluorescent film or the completely cured body of the fluorescent film is directly combined with the light exit surface of the semiconductor light emitting device. Further, the following thermal weight loss rate of the fully cured body is below 5% (≤5wt%);
所述的热失重率被定义为:将所述完全固化体在温度150℃放置1000h的失重率。The thermal weight loss rate is defined as the weight loss rate of placing the fully cured body at a temperature of 150°C for 1000 h.
优选的,所述的热失重率在2%以下。Preferably, the thermal weight loss rate is below 2%.
例如,在一些较为具体的实施案例中,一类LED发光装置的封装工艺可以包括:For example, in some more specific implementation cases, the packaging process of a type of LED light-emitting device may include:
在常温下或一定的加热条件下,将一LED芯片的出光面贴附在一复合荧光胶膜的荧光膜的表面上,并通过橡胶辊碾压等方式施加一定的压力,使二者紧密贴合(无气泡);At normal temperature or under certain heating conditions, the light emitting surface of an LED chip is attached to the surface of a fluorescent film of a composite fluorescent adhesive film, and a certain pressure is applied by rubber roller rolling to make the two closely adhere Close (no bubbles);
通过模切等方式对复合荧光胶膜进行外形加工,使其与LED芯片的外形匹配;The shape of the composite fluorescent adhesive film is processed by die-cutting and other methods to match the shape of the LED chip;
将贴附有复合荧光胶膜的LED芯片置入光固化设备(如UV灯箱)或热固化设备(如烘烤箱)中,经一段时间后,使其中的荧光膜完全固化。该荧光膜的完全固化体与LED芯片是一体结合的,两者几乎不能被相互剥离,更确切的讲,所述的完全固化体只能在高强度的冲击下发生龟裂后,由此形成的表层碎片会脱落,而不会完整的从LED芯片表面被剥离。The LED chip with the compound fluorescent glue film attached is placed in a light curing device (such as a UV light box) or a thermal curing device (such as a baking box), and after a period of time, the fluorescent film therein is completely cured. The fully cured body of the fluorescent film is integrated with the LED chip, and the two can hardly be peeled away from each other. More precisely, the fully cured body can only be formed after cracking under high-strength impact. The surface debris will come off without being completely peeled off from the surface of the LED chip.
当然,在一些实施方案中,也可以将所述复合荧光胶膜中的红外辐射膜与所述半导体发光器件的出光面结合。Of course, in some embodiments, the infrared radiation film in the composite fluorescent glue film may also be combined with the light emitting surface of the semiconductor light emitting device.
其中,LED芯片可以预先安装于基板上。LED芯片中还设有用于与基板的基板侧端子电连接的LED侧端子。基板可以是由例如硅基板、陶瓷基板、聚酰亚胺树脂基板、金属基板上层叠绝缘层而成的层叠基板等绝缘基板形成。例如,基板的上表面形成有具备用于与LED的LED侧端子电连接的基板侧端子和与其连接的布线的导体图案。导体图案例如是由金、铜、银、镍等导体形成的。LED芯片可以是通过例如倒装芯片安装或引线接合连接在基板上。Among them, the LED chip may be pre-mounted on the substrate. The LED chip is also provided with LED-side terminals for electrically connecting with the substrate-side terminals of the substrate. The substrate may be formed of an insulating substrate such as a silicon substrate, a ceramic substrate, a polyimide resin substrate, or a laminated substrate formed by laminating insulating layers on a metal substrate. For example, on the upper surface of the substrate, a conductor pattern including a substrate-side terminal for electrically connecting to the LED-side terminal of the LED and a wiring connected thereto is formed. The conductor pattern is formed of conductors such as gold, copper, silver, and nickel. The LED chip may be connected to the substrate by, for example, flip chip mounting or wire bonding.
其后,也可以根据需要在LED与复合荧光胶膜的复合体上设置其它的透明封装层,此类透明封装层可以由透明树脂形成。继而还根据需要通过例如研磨、切割等方式调整此类透明封装层的尺寸。Thereafter, other transparent encapsulation layers may also be provided on the composite of the LED and the composite fluorescent glue film as needed, and such transparent encapsulation layers may be formed of transparent resin. Then, the size of such a transparent encapsulation layer is adjusted according to the need, such as grinding and cutting.
在本申请的一些更为具体的实施案例中,一种CSP LED封装器件的制程可以包括:In some more specific implementation cases of this application, the manufacturing process of a CSP LED package device may include:
置晶:将一个LED芯片或多个LED芯片的阵列排布于基板上;Crystal placement: arrange an LED chip or an array of multiple LED chips on the substrate;
围白墙、磨平:在所述LED芯片上施加CSP白墙胶,之后磨平,至少使各LED芯片的出光面暴露在外;Enclosing white walls and smoothing: apply CSP white wall glue on the LED chips, and then smooth them to expose at least the light emitting surface of each LED chip;
贴膜:将所述复合荧光胶膜内的荧光膜紧密贴附在各LED芯片的出光面上,之后使荧光膜完全固化;Film: the fluorescent film in the composite fluorescent adhesive film is closely attached to the light emitting surface of each LED chip, and then the fluorescent film is completely cured;
切割:对前一步骤形成的器件进行切割等加工,再进行其它的后处理操作,获得成品。Cutting: The device formed in the previous step is cut and processed, and then other post-processing operations are performed to obtain a finished product.
所述贴膜工序中采用的工艺条件可以包括:温度为100~150℃,压力为0.003~0.015Mpa,时间为1~5min。而使所述荧光膜完全固化的工艺条件可以为:~180℃,2~4h。The process conditions used in the film sticking process may include: a temperature of 100 to 150° C., a pressure of 0.003 to 0.015 MPa, and a time of 1 to 5 min. The process conditions for completely curing the fluorescent film may be: ~180°C, 2~4h.
在本申请的另一些更为具体的实施案例中,一种CSP LED封装器件的制程可以包括:In other more specific implementation cases of this application, the manufacturing process of a CSP LED package device may include:
固晶:将一个LED芯片或多个LED芯片的阵列粘附在所述复合荧光胶膜内的荧光膜上;Solid crystal: attach an LED chip or an array of multiple LED chips to the fluorescent film in the composite fluorescent glue film;
围白墙、磨平:在所述LED芯片上施加CSP白墙胶,之后磨平,至少使各LED芯片的出光面暴露在外;Enclosing white walls and smoothing: apply CSP white wall glue on the LED chips, and then smooth them to expose at least the light emitting surface of each LED chip;
固化:使所述的荧光膜完全固化;Curing: completely curing the fluorescent film;
切割:对前一步骤形成的器件进行切割等加工,再进行其它的后处理操作,获得成品。Cutting: The device formed in the previous step is cut and processed, and then other post-processing operations are performed to obtain a finished product.
以下结合若干更为具体的实施例及相应对比例对本申请的技术方案作更为详细的解释说明。但仍需强调的是,这些实施例不应被视作对本申请的保护范围构成任何限制。又及,除非另外指明,否则本申请说明书中的所有份数、百分数、比率等均按重量计。The technical solution of the present application will be explained in more detail in combination with several more specific embodiments and corresponding comparative examples. However, it still needs to be emphasized that these embodiments should not be regarded as any limitation on the scope of protection of the present application. Also, unless otherwise specified, all parts, percentages, ratios, etc. in the specification of this application are by weight.
在如下实施例中所涉及的荧光封装组合物可以参考目前业界广泛应用的有机硅胶混合物的组配方式配制,例如,其中的有机硅组合物的组分可以被分为组分A(主要包含含乙烯基官能团的硅氧烷树脂、铂催化剂、添加剂等)和组分B((主要包含含乙烯基官能团的硅氧烷树脂、含Si-H官能团的硅氧烷树脂、添加剂等),在使用时将两组分按一定比例混合,然后加入相应含量的荧光粉或荧光粉组合。The fluorescent encapsulation composition involved in the following examples can be formulated with reference to the currently widely used organosilicon mixtures in the industry. For example, the components of the silicone composition can be divided into component A (mainly containing Silicone resins with vinyl functional groups, platinum catalysts, additives, etc.) and component B ((mainly containing silicone resins with vinyl functional groups, silicone resins with Si-H functional groups, additives, etc.), in use When mixing the two components in a certain ratio, then add the corresponding content of phosphor or phosphor combination.
如下实施例中采用的无机填料、有机硅组合物(亦可认为是有机硅胶料)、荧光粉等均可以从市场途径获取。例如,其中的无机填料可以为TiO 2(杜邦TS6300,D 50=0.53um)、SiO 2(卡博特TS720)、Al 2O 3(百图高新材料股份有限公司,TPA-5、D 50=5um)、ZnO(腾太化工、D 50=50nm)、BN(百图高新材料股份有限公司ABN-5、D 50=5um)、MgO(百图高新材料股份有限公司,粒径约为10-20um)中一种或多种的组合。其中的有机硅胶料可以为低折PF1浆料或高折PF2浆料(购自弗洛里光电材料(苏州)有限公司)。 The inorganic fillers, silicone compositions (which can also be regarded as organic silica gel materials), phosphors, etc. used in the following examples can be obtained from the market. For example, the inorganic filler may be TiO 2 (DuPont TS6300, D 50 =0.53um), SiO 2 (Cabot TS720), Al 2 O 3 (Baito High-Tech Materials Co., Ltd., TPA-5, D 50 = 5um), ZnO (Teng too Chemical, D 50 = 50nm), BN ( one hundred Performance materials Co., ABN-5, D 50 = 5um ), MgO ( one hundred Performance materials Co., Ltd., particle size of about 10- 20um) one or more combinations. The organic silicone material may be a low-fold PF1 slurry or a high-fold PF2 slurry (purchased from Flory Optoelectronics (Suzhou) Co., Ltd.).
在如下实施例中所涉及的复合荧光胶膜的制程可以为:The manufacturing process of the composite fluorescent adhesive film involved in the following embodiments may be:
荧光膜的制备:将荧光封装组合物倒置于平板或PET膜上,使用成膜器(例如上海普申化工机械有限公司的单面制备器)制成一定厚度的膜,在加热平台通过固化取得不流动、可剥离的胶膜(B-stage,free-standing),即荧光膜。Preparation of fluorescent film: put the fluorescent packaging composition upside down on a flat plate or PET film, use a film former (such as the single-sided preparation device of Shanghai Pushen Chemical Machinery Co., Ltd.) to make a film of a certain thickness, and obtain it by curing on a heating platform A non-flowing, peelable adhesive film (B-stage, free-standing), that is, a fluorescent film.
红外辐射膜的制备:1)将一定配比的无机填料按序加入有机硅胶PF1浆料中,混合均匀,并于PET薄膜上制成一定厚度的红外辐射薄膜(实施例1-实施例6中各红外辐射膜的原料组成可以参阅表1);2)将步骤1的膜层放入150℃烘箱内预固化10min;3)在膜层上方再覆盖一层PET薄膜,得到红外辐射膜(参考图1所示)。当然,亦可将所述用于形成所述红外辐射膜的组合物倒置于平板上,使用成膜器制成一定厚度的膜,经固化处理形成红外辐射膜。复合荧光胶膜的制备:将所述红外辐射膜与荧光膜贴合,获得所述复合荧光胶膜(参考图1所示)。Preparation of infrared radiation film: 1) Add a certain proportion of inorganic filler in order to the organic silica gel PF1 slurry, mix evenly, and make a certain thickness of infrared radiation film on the PET film (Example 1 to Example 6) The raw material composition of each infrared radiation film can refer to Table 1); 2) Put the film layer of step 1 into a 150°C oven for pre-curing for 10 minutes; 3) Cover the film layer with a PET film to obtain an infrared radiation film (reference (Figure 1). Of course, the composition for forming the infrared radiation film can also be placed upside down on a flat plate, a film of a certain thickness can be made using a film former, and cured to form an infrared radiation film. Preparation of composite fluorescent adhesive film: the infrared radiation film and the fluorescent film are pasted together to obtain the composite fluorescent adhesive film (refer to FIG. 1).
当然,也可以将用于形成所述红外辐射膜的组合物(包括用于形成基材的聚合物、溶剂或稀释剂及均匀分散的无机散热填料,可以为分散液或浆料)直接涂布在所述荧光膜上,再固化形成所述红外辐射膜,获得所述复合荧光胶膜。Of course, the composition for forming the infrared radiation film (including the polymer, solvent or diluent for forming the substrate and the uniformly dispersed inorganic heat dissipating filler, which may be a dispersion or slurry) may also be directly coated On the fluorescent film, the infrared radiation film is cured again to obtain the composite fluorescent adhesive film.
实施例1 一种复合荧光胶膜的制备方法包括如下步骤:Embodiment 1 A method for preparing a composite fluorescent adhesive film includes the following steps:
(1)提供一种有机硅胶PF1浆料(购自弗洛里光电材料(苏州)有限公司),其为一种有机 硅组合物,包含数均分子量高于3×10 5g/mol的乙烯基硅氧烷基橡胶(组分1,SG6066,乙烯基二甲基硅烷基封端甲基乙烯基硅橡胶,vinyldimethylsilyl terminated Methyl Vinyl Silicone Gum,Power Chemicals Ltd,数均分子量450,000-600,000g/mol,乙烯基含量约0.90-1.10wt%)、含乙烯基官能团的硅氧烷树脂(组分2,A05-01-A,弗洛里光电材料(苏州)有限公司)、含Si-H官能团的硅氧烷树脂(组分3,A05-01-B,弗洛里光电材料(苏州)有限公司)、氢化硅烷化催化剂(组分4,SIP6832.2,Gelest,200ppm)、溶剂(4-甲基-2-戊酮,200g)等基础组分,当然还可包含其它辅助组分。 (1) Provide an organic silicone PF1 slurry (purchased from Flory Optoelectronics (Suzhou) Co., Ltd.), which is an organic silicon composition containing ethylene having a number average molecular weight higher than 3×10 5 g/mol Silicone-based rubber (component 1, SG6066, vinyldimethylsilyl terminated Methyl Vinyl Silicone Gum, Power Chemicals Ltd, number average molecular weight 450,000-600,000g/mol, Vinyl content of about 0.90-1.10wt%), silicone resin containing vinyl functional groups (component 2, A05-01-A, Flory Optoelectronics (Suzhou) Co., Ltd.), silicon containing Si-H functional groups Oxane resin (component 3, A05-01-B, Flory Optoelectronics (Suzhou) Co., Ltd.), hydrosilylation catalyst (component 4, SIP6832.2, Gelest, 200ppm), solvent (4-methyl -2-pentanone, 200g) and other basic components, of course, can also contain other auxiliary components.
(2)在所述PF1浆料中以10:1的质量比例混入市售黄色荧光粉SDY558-15(烟台希尔德新材料有限公司),再经双行星搅拌器混合均匀后,形成荧光封装组合物。(2) Mix the commercially available yellow phosphor SDY558-15 (Yantai Hild New Material Co., Ltd.) in the PF1 slurry at a mass ratio of 10:1, and then mix evenly by a double planetary mixer to form a fluorescent package combination.
(3)采用制膜器(如1mm制膜器)或印刷方式,特别是丝网印刷方式将荧光封装组合物涂覆到基板上成膜,之后在100℃(通风橱内的加热平台)加热20min,获得荧光膜。(3) Apply the fluorescent encapsulation composition to the substrate by a film maker (such as a 1mm film maker) or a printing method, especially a screen printing method, and then heat at 100°C (heating platform in a fume hood) After 20 minutes, a fluorescent film was obtained.
(4)将TiO 2(杜邦TS6300)与SiO 2(卡博特白炭黑TS720)依次与所述有机硅胶PF1浆料混合,形成含1.0wt%TiO 2及1wt%SiO 2的浆料,之后在约150℃固化形成红外散热膜。其中的有机硅胶PF1浆料亦可替换为其它具有类似性质的有机硅组合物。 (4) TiO 2 (DuPont TS6300) and SiO 2 (Cabot White Carbon Black TS720) are sequentially mixed with the organic silica gel PF1 slurry to form a slurry containing 1.0wt% TiO 2 and 1wt% SiO 2 and then Curing at about 150°C forms an infrared heat dissipation film. The silicone PF1 slurry can also be replaced with other silicone compositions with similar properties.
(5)将红外散热膜与荧光膜贴合,形成复合荧光胶膜。(5) Laminate the infrared heat dissipation film and the fluorescent film to form a composite fluorescent adhesive film.
实施例2 该实施例与实施例1基本相同,区别之处在于:Embodiment 2 This embodiment is basically the same as Embodiment 1, except that:
步骤(1)中涉及的荧光封装组合物亦由一种有机硅胶PF1浆料(购自弗洛里光电材料(苏州)有限公司)与荧光粉组合形成,其组分如下:数均分子量高于3×10 5g/mol的乙烯基硅氧烷基橡胶(SG6066,乙烯基二甲基硅烷基封端甲基乙烯基硅橡胶,vinyldimethylsilyl terminated Methyl Vinyl Silicone Gum,Power Chemicals Ltd,数均分子量约450,000-600,000g/mol,乙烯基含量约0.90-1.10wt%)4g、含乙烯基官能团的硅氧烷树脂(A05-01-A,弗洛里光电材料(苏州)有限公司)12.8g、乙烯基甲氧基硅氧烷均聚物(Vinylmethoxysiloxane Homopolymer VMM-010,Gelest)0.35g、含Si-H官能团的硅氧烷树脂(A05-01-B,弗洛里光电材料(苏州)有限公司)6.8g、氢化硅烷化催化剂(SIP6832.2,Gelest)20ppm、溶剂4-甲基-2戊酮20g,黄色荧光粉SDY558-15from烟台希尔德新材料有限公司35.5g。 The fluorescent encapsulation composition involved in step (1) is also formed by combining an organic silicone PF1 slurry (purchased from Flory Optoelectronics (Suzhou) Co., Ltd.) with phosphor powder, and its components are as follows: the number average molecular weight is higher than 3×10 5 g/mol of vinyl siloxane-based rubber (SG6066, vinyl dimethyl silyl terminated methyl vinyl silicone rubber, vinyldimethylsilyl terminated Methyl Vinyl Silicone Gum, Power Chemicals Ltd, number average molecular weight about 450,000 -600,000g/mol, vinyl content about 0.90-1.10wt%) 4g, siloxane resin containing vinyl functional groups (A05-01-A, Flori Optoelectronics (Suzhou) Co., Ltd.) 12.8g, vinyl Vinylmethoxysiloxane Homopolymer VMM-010, Gelest 0.35g, siloxane resin containing Si-H functional groups (A05-01-B, Flory Optoelectronics (Suzhou) Co., Ltd.) 6.8 g. Hydrosilylation catalyst (SIP6832.2, Gelest) 20ppm, solvent 4-methyl-2pentanone 20g, yellow phosphor SDY558-15from Yantai Hild New Material Co., Ltd. 35.5g.
步骤(3)中采用的预固化条件为:110℃(通风橱内的加热平台)10min。The pre-curing conditions used in step (3) are: 110°C (heating platform in fume hood) for 10 minutes.
步骤(4)中形成的浆料包含1.5wt%TiO 2(杜邦TS6300)与及0.5wt%SiO 2(卡博特白炭黑TS720),余量为所述有机硅胶PF1浆料。该有机硅胶PF1浆料亦可替换为其它具有类似性质的有机硅组合物。 The slurry formed in step (4) includes 1.5 wt% TiO 2 (DuPont TS6300) and 0.5 wt% SiO 2 (Cabot white carbon black TS720), and the balance is the organic silica gel PF1 slurry. The silicone PF1 slurry can also be replaced with other silicone compositions with similar properties.
本实施例制得的复合荧光胶膜为透明偏白色薄膜。The composite fluorescent adhesive film prepared in this embodiment is a transparent off-white film.
实施例3 该实施例与实施例1基本相同,区别之处在于:Embodiment 3 This embodiment is basically the same as Embodiment 1, except that:
步骤(1)中涉及的荧光封装组合物亦由一种有机硅胶PF1浆料(购自弗洛里光电材料(苏州)有限公司)与荧光粉组合形成,其数均分子量高于3×10 5g/mol的乙烯基硅氧烷基橡胶(SG6066,乙烯基二甲基硅烷基封端甲基乙烯基硅橡胶,vinyldimethylsilyl terminated Methyl Vinyl Silicone Gum,Power Chemicals Ltd,数均分子量约450,000-600,000g/mol,乙烯基含量约0.90-1.10wt%)1.8g、含乙烯基官能团的硅氧烷树脂(A05-01-A,弗洛里光电材料(苏州)有限公司)4.6g、乙烯基甲氧基硅氧烷均聚物(Vinylmethoxysiloxane Homopolymer,VMM-010,Gelest)0.35g、含Si-H官能团的硅氧烷树脂(A05-01-B,弗洛里光电材料(苏州)有限公司)4.6g、氢化硅烷化催化剂(SIP6832.2,Gelest)10ppm、溶剂4-甲基-2戊酮9.0g, 0.34g黄色荧光粉SDY558-15、20.1g绿色荧光粉SDG530H、1.2g红色荧光粉SSDR630Q-2(均购自烟台希尔德新材料有限公司)。 The fluorescent encapsulation composition involved in step (1) is also formed from a combination of an organic silicone PF1 slurry (purchased from Flory Optoelectronics (Suzhou) Co., Ltd.) and phosphor powder, the number average molecular weight of which is higher than 3×10 5 g/mol of vinyl siloxane-based rubber (SG6066, vinyl dimethyl silyl terminated methyl vinyl silicone rubber, vinyl dimethylsilyl terminated Methyl Vinyl Silicone Gum, Power Chemicals Ltd, number average molecular weight about 450,000-600,000 g/ mol, vinyl content about 0.90-1.10wt%) 1.8g, siloxane resin containing vinyl functional groups (A05-01-A, Flory Optoelectronics (Suzhou) Co., Ltd.) 4.6g, vinyl methoxy Silicone homopolymer (Vinylmethoxysiloxane Homopolymer, VMM-010, Gelest) 0.35g, siloxane resin containing Si-H functional group (A05-01-B, Flori Optoelectronics (Suzhou) Co., Ltd.) 4.6g, Hydrosilylation catalyst (SIP6832.2, Gelest) 10ppm, solvent 4-methyl-2pentanone 9.0g, 0.34g yellow phosphor SDY558-15, 20.1g green phosphor SDG530H, 1.2g red phosphor SSDR630Q-2 ( All were purchased from Yantai Hild New Material Co., Ltd.).
步骤(4)中形成的浆料包含0.3wt%TiO 2(杜邦TS6300)、0.5wt%SiO 2(卡博特白炭黑TS720)、0.3wt%SiO 2(TPA-5)、0.3wt%ZnO(购自腾太化工)、0.3wt%氮化硼(ABN-5)、0.3wt%云母粉(JTX散热粉),余量为所述有机硅胶PF1浆料。 The slurry formed in step (4) contains 0.3wt% TiO 2 (DuPont TS6300), 0.5wt% SiO 2 (Cabot White Carbon Black TS720), 0.3wt% SiO 2 (TPA-5), 0.3wt% ZnO (Purchased from Tengtai Chemical), 0.3wt% boron nitride (ABN-5), 0.3wt% mica powder (JTX heat dissipation powder), and the balance is the organic silicone PF1 slurry.
本实施例制得的复合荧光胶膜厚度为透明偏白色薄膜。The thickness of the composite fluorescent adhesive film prepared in this embodiment is a transparent white film.
实施例4 该实施例与实施例1基本相同,区别之处在于:Embodiment 4 This embodiment is basically the same as Embodiment 1, except that:
步骤(1)中涉及的荧光封装组合物亦由一种有机硅胶PF1浆料(购自弗洛里光电材料(苏州)有限公司)与荧光粉组合形成,其数均分子量高于3×10 5g/mol的甲基苯基乙烯基硅氧烷基橡胶(Methyl Phenyl Vinyl Silicone Rubber,弗洛里光电材料(苏州)有限公司,数均分子量约500,000g/mol,苯基含量约30wt%,乙烯基含量约0.35-0.40wt%)3.7g、含苯基和乙烯基官能团的硅氧烷树脂(H20-01-A,弗洛里光电材料(苏州)有限公司)7.7g、含苯基和Si-H官能团的硅氧烷树脂(H20-01-B,弗洛里光电材料(苏州)有限公司)7.7g、氢化硅烷化催化剂(SIP6832.2,Gelest)10ppm、溶剂4-甲基-2戊酮1.2g,0.48g黄色荧光粉SDY558-15、14.3g绿色荧光粉SDG530H、0.86g红色荧光粉SSDR630Q-2(均购自烟台希尔德新材料有限公司)。将以上组分经双行星搅拌器混合均匀后得到一个荧光粉含量为44.9wt%的混合物。步骤(4)中形成的浆料包含0.3wt%TiO 2(杜邦TS6300)、0.5wt%SiO 2(卡博特白炭黑TS720)、0.3wt%SiO 2(TPA-5)、0.3wt%ZnO(购自腾太化工)、0.3wt%氮化硼(ABN-5)、0.3wt%MgO(粒径约10-20μm),余量为所述有机硅胶PF1浆料。 The fluorescent encapsulation composition involved in step (1) is also formed from a combination of an organic silicone PF1 slurry (purchased from Flory Optoelectronics (Suzhou) Co., Ltd.) and phosphor powder, the number average molecular weight of which is higher than 3×10 5 g/mol Methyl Phenyl Vinyl Silicone Rubber (Flory Optoelectronic Materials (Suzhou) Co., Ltd., number average molecular weight about 500,000g/mol, phenyl content about 30wt%, ethylene Base content about 0.35-0.40wt%) 3.7g, silicone resin containing phenyl and vinyl functional groups (H20-01-A, Flory Optoelectronics (Suzhou) Co., Ltd.) 7.7g, containing phenyl and Si -H functional silicone resin (H20-01-B, Flory Optoelectronics (Suzhou) Co., Ltd.) 7.7g, hydrosilylation catalyst (SIP6832.2, Gelest) 10ppm, solvent 4-methyl-2pentane Ketone 1.2g, 0.48g yellow phosphor SDY558-15, 14.3g green phosphor SDG530H, 0.86g red phosphor SSDR630Q-2 (all purchased from Yantai Hild New Material Co., Ltd.). After the above components are mixed evenly by a double planetary mixer, a mixture with a phosphor content of 44.9% by weight is obtained. The slurry formed in step (4) contains 0.3wt% TiO 2 (DuPont TS6300), 0.5wt% SiO 2 (Cabot White Carbon Black TS720), 0.3wt% SiO 2 (TPA-5), 0.3wt% ZnO (Purchased from Tengtai Chemical), 0.3 wt% boron nitride (ABN-5), 0.3 wt% MgO (particle size about 10-20 μm), the balance is the organic silicone PF1 slurry.
本实施例制得的复合荧光胶膜为透明偏白色薄膜。The composite fluorescent adhesive film prepared in this embodiment is a transparent off-white film.
实施例5 该实施例与实施例1基本相同,区别之处在于:Embodiment 5 This embodiment is basically the same as Embodiment 1, except that:
步骤(1)中涉及的荧光封装组合物亦由一种有机硅胶PF1浆料(购自弗洛里光电材料(苏州)有限公司)与荧光粉组合形成,该有机硅胶PF1浆料中溶剂组分PGMEA为50wt%,其中非溶剂组分包括:5wt%γ-氰丙基硅氧烷橡(MW=4.12×10 5g/mol)、90wt%式I化合物(MW=1.2×10 2g/mol)、5wt%式V化合物、1ppm氯铂酸。 The fluorescent encapsulation composition involved in step (1) is also formed by combining an organic silicone PF1 slurry (purchased from Flory Optoelectronics (Suzhou) Co., Ltd.) with phosphor powder, and the solvent component in the organic silicone PF1 slurry PGMEA was 50wt%, wherein the non-solvent component comprising: 5wt% γ- cyanopropyl silicone rubber (MW = 4.12 × 10 5 g / mol), 90wt% a compound of formula I (MW = 1.2 × 10 2 g / mol ), 5wt% compound of formula V, 1ppm chloroplatinic acid.
步骤(4)中形成的浆料包含1.0wt%ZnO(购自腾太化工)、1.0wt%MgO(粒径约10-20μm),余量为所述有机硅胶PF1浆料。The slurry formed in step (4) contains 1.0 wt% ZnO (purchased from Tengtai Chemical), 1.0 wt% MgO (particle size about 10-20 μm), and the remainder is the organo-silica gel PF1 slurry.
本实施例制得的复合荧光胶膜为透明度较高的薄膜。The composite fluorescent adhesive film prepared in this embodiment is a film with high transparency.
实施例6 该实施例与实施例1基本相同,区别之处在于:Embodiment 6 This embodiment is basically the same as Embodiment 1, except that:
步骤(1)中涉及的荧光封装组合物亦由一种有机硅胶PF1浆料(购自弗洛里光电材料(苏州)有限公司)与荧光粉组合形成,该有机硅胶PF1浆料溶剂组分4-甲基-2-戊酮为50wt%,其中非溶剂组分包括:51wt%三氟丙基硅氧烷橡胶(MW=1×10 8g/mol)、21wt%式III化合物(MW=1.05×10 4g/mol)、28wt%式II化合物、100ppm双(乙基乙酰乙酸)铂。 The fluorescent encapsulating composition involved in step (1) is also formed by combining an organic silica gel PF1 slurry (purchased from Flory Optoelectronics (Suzhou) Co., Ltd.) with phosphor powder, the organic silica gel PF1 slurry solvent component 4 -Methyl-2-pentanone is 50% by weight, wherein the non-solvent component includes: 51% by weight of trifluoropropyl siloxane rubber (MW = 1 × 10 8 g/mol), 21% by weight of compound of formula III (MW = 1.05 ×10 4 g/mol), 28 wt% compound of formula II, 100 ppm bis(ethylacetoacetate) platinum.
步骤(4)中形成的浆料包含1.0wt%ZnO(购自腾太化工)、1.0wt%MgO(粒径约10-20μm),余量为所述有机硅胶PF1浆料。The slurry formed in step (4) contains 1.0 wt% ZnO (purchased from Tengtai Chemical), 1.0 wt% MgO (particle size about 10-20 μm), and the remainder is the organo-silica gel PF1 slurry.
本实施例制得的复合荧光胶膜为透明度较高的薄膜。The composite fluorescent adhesive film prepared in this embodiment is a film with high transparency.
对照组1~6:该对照例1~6与实施例1~6基本相同,区别之处在于:仅包含步骤(1)-步骤(3)。Control groups 1 to 6: The control examples 1 to 6 are basically the same as the examples 1 to 6, except that they only include step (1) to step (3).
前述实施例的荧光封装组合物中溶剂还被替代为α-甲基苯乙烯、苯乙烯单氟氯、N,N-二(甲 基)丙烯酸、N-甲基-N-乙基氨基乙酯(甲基)丙烯酸酯、羟甲基(甲基)丙烯酰胺等稀释剂。The solvent in the fluorescent encapsulating composition of the foregoing embodiment is also replaced with α-methylstyrene, styrene monofluorochloride, N,N-di(meth)acrylic acid, N-methyl-N-ethylaminoethyl (Meth) acrylate, methylol (meth) acrylamide and other diluents.
表1Table 1
Figure PCTCN2018124689-appb-000003
Figure PCTCN2018124689-appb-000003
如下将对前述实施例所获的复合荧光胶膜(如下简称为复合膜)及对照例所获荧光膜(如下简称为PF膜)的应用性能进行测试。其中采用的测试工具等均可以是业界习用的,例如可以包括:OMEGA HH806AU温度测试仪、热沉、COB、直流电源、远方手持式照度仪,等等。相应的测试方法具体如下:The application performance of the composite fluorescent adhesive film obtained in the foregoing examples (hereinafter referred to as a composite film) and the fluorescent film obtained in a comparative example (hereinafter referred to as PF film) will be tested as follows. The test tools used in it can all be used in the industry, for example: OMEGA HH806AU temperature tester, heat sink, COB, DC power supply, remote handheld illuminance meter, etc. The corresponding test methods are as follows:
1)散热性能测试:1) Thermal performance test:
①将前述各实施例的复合荧光胶膜、对照例所获的荧光膜分别贴合到有机硅胶封装好(A05-01L裸胶封装)的集成COB表面(参考图2、图3所示),保证无气泡残留(必要时,还需使其中的荧光膜在150℃~180℃恒温烘干至完全固化)。在一些实施方案中,也可以将复合荧光胶膜中的红外辐射膜与LED芯片贴合,参阅图4。① The composite fluorescent adhesive film of each of the foregoing examples and the fluorescent film obtained in the comparative example are attached to the integrated COB surface (refer to FIG. 2 and FIG. 3) of organic silicone encapsulation (A05-01L bare adhesive encapsulation), Ensure that no bubbles remain (if necessary, the fluorescent film must be dried at 150 ℃ ~ 180 ℃ constant temperature until fully cured). In some embodiments, the infrared radiation film in the composite fluorescent glue film can also be attached to the LED chip, see FIG. 4.
②将COB放置到热沉上,二者间用硅酮导热胶连接;②Place the COB on the heat sink, and connect the two with silicone thermal conductive adhesive;
③将欧米伽温度测试仪两个探头分别与集成COB中心和基板焊点接触;③ Put the two probes of the Omega temperature tester into contact with the integrated COB center and the solder joint of the substrate;
④将焊好导线的集成COB与恒流电源连接,确保接触良好;④Connect the integrated COB of the welded wire to the constant current power supply to ensure good contact;
⑤接通电源;⑤ Connect the power supply;
⑥OMEGA热电偶自动测试功能,间隔30s记录一次数据,记录时长1小时左右;⑥ OMEGA thermocouple automatic test function, record data once every 30s, the recording time is about 1 hour;
⑦将所得数据在PC端导出,取稳定数据记录平均值,整理汇总。⑦Export the obtained data on the PC, take the average of the stable data records, and organize and summarize them.
测试的样品如图2所示,OMEGA热电偶的温度测试结果如表2所示。The tested samples are shown in Figure 2, and the temperature test results of OMEGA thermocouples are shown in Table 2.
注:在该散热性能测试过程中,每一实施例可以取多个样品,例如三个样品进行测试。每一对照例亦取多个样品进行测试(结果取平均值示于表2)。Note: During this heat dissipation performance test, each embodiment can take multiple samples, for example three samples for testing. Each control example also took multiple samples for testing (the results are shown in Table 2).
表2Table 2
Figure PCTCN2018124689-appb-000004
Figure PCTCN2018124689-appb-000004
Figure PCTCN2018124689-appb-000005
Figure PCTCN2018124689-appb-000005
2)色度空间均匀性测试:2) Color space uniformity test:
该测试用九点法衡量光的空间色度一致性,测试装置如图5所示。The test uses the nine-point method to measure the spatial chromaticity consistency of light. The test device is shown in Figure 5.
参考前述的步骤①,将复合膜、PF1膜分别贴到COB光源上,再将该光源与屏幕平行放置,LED光源距离测试屏幕距离L1=15cm,屏幕上9点等间隔排列(间隔L2=15cm),中间点与LED灯中心点处于一个水平面上(如图4所示)。Refer to the previous step ①, attach the composite film and PF1 film to the COB light source respectively, and then place the light source parallel to the screen, the distance between the LED light source and the test screen is L1=15cm, and the 9 points on the screen are arranged at equal intervals (interval L2=15cm ), the middle point and the center point of the LED lamp are on a horizontal plane (as shown in Figure 4).
9点法用手持照度计来测试9点色坐标以及色温的标准差来衡量光源的空间色度均匀性,其测试结果如表3所示。The 9-point method uses a hand-held illuminance meter to test the 9-point color coordinates and the standard deviation of the color temperature to measure the spatial chromaticity uniformity of the light source. The test results are shown in Table 3.
表3 九点法衡量复合膜层光的空间色度一致性结果Table 3 The nine-point method to measure the spatial chromaticity consistency of the composite film light
Figure PCTCN2018124689-appb-000006
Figure PCTCN2018124689-appb-000006
注:上表3中的“对照例 ”测试数值是取与对照例1-6相应的多个样品分别测试后所获测试结果的平均值。 Note: The test value of "Control Example " in Table 3 above is the average value of the test results obtained after testing multiple samples corresponding to Control Examples 1-6 respectively.
显然的,本申请实施例提供的复合荧光胶膜在应用于封装半导体发光芯片时,能显著改善其散热性能,同时还大幅提升了其出光均匀性。Obviously, the composite fluorescent adhesive film provided in the embodiments of the present application can significantly improve the heat dissipation performance when it is used to encapsulate a semiconductor light-emitting chip, and at the same time greatly improve the uniformity of its light output.
此外,应用本申请的复合荧光胶膜,并配合本领域技术人员所知悉的封装工艺,还可对半导体发光芯片等实现其他形式的封装,其中典型的一些封装形式可以参阅图6A-图6E所示。In addition, the application of the composite fluorescent adhesive film of this application, together with the packaging process known to those skilled in the art, can also implement other forms of packaging for semiconductor light-emitting chips, etc., some typical packaging forms can refer to FIGS. 6A-6E Show.
需要说明的是,在本文中,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。It should be noted that in this article, the terms "include", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, It also includes other elements that are not explicitly listed, or include elements inherent to this process, method, article, or equipment.
应当理解,上述实施例仅为说明本申请的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本申请的内容并据以实施,并不能以此限制本申请的保护范围。凡根据本申请精神实质所作的等效变化或修饰,都应涵盖在本申请的保护范围之内。It should be understood that the above embodiments are only to illustrate the technical concept and characteristics of the present application, and the purpose thereof is to enable those familiar with the technology to understand the content of the present application and implement it accordingly, but not to limit the scope of protection of the present application. All equivalent changes or modifications based on the spirit of this application should be covered within the scope of protection of this application.

Claims (16)

  1. 一种复合荧光胶膜,其特征在于包括荧光膜以及与所述荧光膜结合的红外辐射膜,所述荧光膜包括有机硅基体,所述有机硅基体中均匀分散有荧光颗粒物,所述红外辐射膜包括基材及于所述基材中均匀分散的无机散热填料,所述复合荧光胶膜可使设定波长的光线透过。A composite fluorescent adhesive film, characterized by comprising a fluorescent film and an infrared radiation film combined with the fluorescent film, the fluorescent film comprises an organic silicon matrix, fluorescent particles are uniformly dispersed in the organic silicon matrix, the infrared radiation The film includes a base material and an inorganic heat dissipation filler uniformly dispersed in the base material, and the composite fluorescent adhesive film can transmit light of a set wavelength.
  2. 如权利要求1所述的复合荧光胶膜,其特征在于:所述无机散热填料包括二氧化钛、二氧化锆、氧化硅、氮化硼、氧化锌、氧化铝、氧化镁、云母、稀土金属氧化物中的任意一种或多种的组合。The composite fluorescent adhesive film of claim 1, wherein the inorganic heat dissipation filler includes titanium dioxide, zirconium dioxide, silicon oxide, boron nitride, zinc oxide, aluminum oxide, magnesium oxide, mica, rare earth metal oxide Any one or more of the combination.
  3. 如权利要求1所述的复合荧光胶膜,其特征在于:所述无机散热填料的粒径为0.001μm~500μm,优选为0.05μm~50μm,更优选为0.5μm~10μm。The composite fluorescent adhesive film according to claim 1, wherein the particle diameter of the inorganic heat dissipation filler is 0.001 μm to 500 μm, preferably 0.05 μm to 50 μm, and more preferably 0.5 μm to 10 μm.
  4. 如权利要求1所述的复合荧光胶膜,其特征在于:所述红外辐射膜内无机散热填料的含量为0.001wt%~10wt%,优选为0.1wt%~10wt%,更优选为1wt%~10wt%。The composite fluorescent adhesive film according to claim 1, wherein the content of the inorganic heat dissipating filler in the infrared radiation film is 0.001 wt% to 10 wt%, preferably 0.1 wt% to 10 wt%, and more preferably 1 wt% to 10wt%.
  5. 如权利要求2、3或4所述的复合荧光胶膜,其特征在于:所述无机散热填料采用氧化锌与氧化镁的组合和/或云母;优选的,所述红外辐射膜内氧化锌的含量为0.001wt%~10wt%,进一步优选为0.1wt%~10wt%,尤其优选为1wt%~10wt%;优选的,所述红外辐射膜内氧化镁的含量为0.001wt%~10wt%,进一步优选为0.1wt%~10wt%,尤其优选为1wt%~10wt%;优选的,所述红外辐射膜内云母的含量为0.001wt%~10wt%,进一步优选为0.1wt%~10wt%,尤其优选为1wt%~10wt%。The composite fluorescent adhesive film according to claim 2, 3 or 4, characterized in that: the inorganic heat dissipation filler uses a combination of zinc oxide and magnesium oxide and/or mica; preferably, the zinc oxide in the infrared radiation film The content is 0.001wt% to 10wt%, further preferably 0.1wt% to 10wt%, particularly preferably 1wt% to 10wt%; preferably, the content of magnesium oxide in the infrared radiation film is 0.001wt% to 10wt%, further Preferably it is 0.1wt%-10wt%, especially preferably 1wt%-10wt%; preferably, the content of mica in the infrared radiation film is 0.001wt%-10wt%, further preferably 0.1wt%-10wt%, especially preferred It is 1 wt% to 10 wt%.
  6. 如权利要求1所述的复合荧光胶膜,其特征在于:所述基材由有机硅组合物形成。The composite fluorescent adhesive film according to claim 1, wherein the substrate is formed of a silicone composition.
  7. 如权利要求1所述的复合荧光胶膜,其特征在于:所述荧光膜或红外辐射膜中的有机硅组合物是预固化的,且所述荧光膜或红外辐射膜表面具有压敏胶功能。The composite fluorescent adhesive film according to claim 1, wherein the silicone composition in the fluorescent film or infrared radiation film is pre-cured, and the surface of the fluorescent film or infrared radiation film has a pressure-sensitive adhesive function .
  8. 如权利要求1所述的复合荧光胶膜,其特征在于:所述荧光膜或红外辐射膜的下述剥离强度的百分率为30%以上;The composite fluorescent adhesive film according to claim 1, wherein the percentage of the following peel strength of the fluorescent film or infrared radiation film is 30% or more;
    所述剥离强度的百分率=[75℃气氛下的剥离强度/25℃气氛下的剥离强度]×100Percentage of the peel strength=[Peel strength in 75°C atmosphere/Peel strength in 25°C atmosphere]×100
    所述75℃气氛下的剥离强度:在温度75℃,以剥离角度180度、速度300mm/分钟将所述荧光膜或红外辐射膜从半导体发光器件的出光面剥离时的剥离强度;Peeling strength in the 75°C atmosphere: peeling strength when the fluorescent film or infrared radiation film is peeled from the light emitting surface of the semiconductor light emitting device at a peeling angle of 180° and a speed of 300 mm/min at a temperature of 75°C;
    所述25℃气氛下的剥离强度:在温度25℃,以剥离角度180度、速度300mm/分钟将所述荧光膜或红外辐射膜从半导体发光器件的出光面剥离时的剥离强度。Peeling strength in the 25°C atmosphere: Peeling strength when peeling the fluorescent film or infrared radiation film from the light emitting surface of the semiconductor light emitting device at a peeling angle of 180° and a speed of 300 mm/min at a temperature of 25°C.
  9. 如权利要求1所述的复合荧光胶膜,其特征在于:所述红外辐射膜的厚度为0.005μm~10000μm,优选为0.05μm~5000μm,尤其优选为1μm~1000μm。The composite fluorescent adhesive film according to claim 1, wherein the thickness of the infrared radiation film is 0.005 μm to 10000 μm, preferably 0.05 μm to 5000 μm, and particularly preferably 1 μm to 1000 μm.
  10. 如权利要求1所述的复合荧光胶膜,其特征在于:所述荧光颗粒物为荧光粉,其粒径为0.001~50μm,或者,所述荧光颗粒物为荧光量子点,其粒径为1.0~100nm。The composite fluorescent adhesive film according to claim 1, wherein the fluorescent particles are fluorescent powder with a particle size of 0.001-50 μm, or the fluorescent particles are fluorescent quantum dots with a particle size of 1.0-100 nm .
  11. 如权利要求1所述的复合荧光胶膜,其特征在于:所述荧光膜的厚度为0.005μm~10000μm,优选为20~500μm。The composite fluorescent adhesive film according to claim 1, wherein the thickness of the fluorescent film is 0.005 μm to 10000 μm, preferably 20 to 500 μm.
  12. 如权利要求1所述的复合荧光胶膜,其特征在于:所述复合荧光胶膜的厚度为0.010μm~10000μm,优选为0.05μm~5000μm,尤其优选为1μm~1000μm。The composite fluorescent adhesive film according to claim 1, wherein the thickness of the composite fluorescent adhesive film is 0.010 μm to 10000 μm, preferably 0.05 μm to 5000 μm, and particularly preferably 1 μm to 1000 μm.
  13. 一种半导体发光装置,其特征在于包括半导体发光器件以及权利要求1-12中任一项所述的复合荧光胶膜,所述复合荧光胶膜中的荧光膜或红外辐射膜与所述半导体发光器件结合; 优选的,所述荧光膜或红外辐射膜与所述半导体发光器件的出光面直接结合。A semiconductor light-emitting device, characterized by comprising a semiconductor light-emitting device and the composite fluorescent glue film according to any one of claims 1-12, wherein the fluorescent film or infrared radiation film in the composite fluorescent glue film and the semiconductor emit light Device combination; preferably, the fluorescent film or infrared radiation film is directly combined with the light exit surface of the semiconductor light emitting device.
  14. 根据权利要求13所述的半导体发光装置,其特征在于:所述半导体发光器件包括LED。The semiconductor light emitting device according to claim 13, wherein the semiconductor light emitting device includes an LED.
  15. 一种半导体发光装置的封装方法,其特征在于包括:A method for packaging a semiconductor light emitting device, characterized in that it includes:
    提供权利要求1-12中任一项所述的复合荧光胶膜,以及Providing the composite fluorescent adhesive film according to any one of claims 1-12, and
    将所述复合荧光胶膜中的荧光膜或红外辐射膜与所述半导体发光器件的出光面固定结合。The fluorescent film or infrared radiation film in the composite fluorescent glue film is fixedly combined with the light emitting surface of the semiconductor light emitting device.
  16. 根据权利要求15所述的封装方法,其特征在于:所述半导体发光器件包括LED。The packaging method according to claim 15, wherein the semiconductor light emitting device includes an LED.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140167087A1 (en) * 2012-12-18 2014-06-19 Toyoda Gosei Co., Ltd. Light emitting device and manufacturing method for the same
CN105720178A (en) * 2016-03-23 2016-06-29 华灿光电(苏州)有限公司 Package method of light emitting diode
CN205723618U (en) * 2016-05-30 2016-11-23 弗洛里光电材料(苏州)有限公司 Fluorescent coating and encapsulating structure
CN106189251A (en) * 2015-05-29 2016-12-07 弗洛里光电材料(苏州)有限公司 It is applied to silicon composition and the application thereof of semiconductor packages

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140167087A1 (en) * 2012-12-18 2014-06-19 Toyoda Gosei Co., Ltd. Light emitting device and manufacturing method for the same
CN106189251A (en) * 2015-05-29 2016-12-07 弗洛里光电材料(苏州)有限公司 It is applied to silicon composition and the application thereof of semiconductor packages
CN105720178A (en) * 2016-03-23 2016-06-29 华灿光电(苏州)有限公司 Package method of light emitting diode
CN205723618U (en) * 2016-05-30 2016-11-23 弗洛里光电材料(苏州)有限公司 Fluorescent coating and encapsulating structure

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