CN105720178A - Package method of light emitting diode - Google Patents
Package method of light emitting diode Download PDFInfo
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- CN105720178A CN105720178A CN201610167672.0A CN201610167672A CN105720178A CN 105720178 A CN105720178 A CN 105720178A CN 201610167672 A CN201610167672 A CN 201610167672A CN 105720178 A CN105720178 A CN 105720178A
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- graphene
- emitting diode
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- resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a package method of a light emitting diode, belonging to the technical field of fabrication of the light emitting diode. The package method comprises the following steps of arranging a composite resin layer on the outer surface of the light emitting diode chip, wherein the composite resin layer comprises resin, graphene and fluorescent powder; and curing and drying the light emitting diode chip coated with the composite resin layer. During the package of the light emitting diode chip, the composite resin layer is arranged on the outer surface of the light emitting diode chip and comprises the resin, the graphene and the fluorescent powder, the graphene has favorable heat conductivity, the composite resin layer containing the graphene is arranged on the outer surface of the light emitting diode chip, thus, heat generated from the light emitting diode chip can be dissipated through the composite resin layer, and the light emitting diode can have favorable heat dissipation performance.
Description
Technical field
The invention belongs to light emitting diode manufacture technology field, particularly to the method for packing of a kind of light emitting diode.
Background technology
In order to strengthen the brightness of light emitting diode, increasing light emitting diode just develops towards the direction of high-power now, but large-power light-emitting diodes is while having the advantage of high brightness, there is also the problem that caloric value is high.The problem high in order to solve large-power light-emitting diodes caloric value, now common solution is in later stage installation process, light emitting diode is arranged on aluminum base plate, so that the heat that light emitting diode produces can be led away by aluminum base plate, thus being reached for the purpose of LED heat radiating.But this solution can only make heat scatter and disappear through this approach of aluminum base plate, and radiating effect is unsatisfactory.
Summary of the invention
Dispelled the heat by aluminum base plate to solve light emitting diode, the problem that effect is undesirable, embodiments provide the method for packing of a kind of light emitting diode.Described technical scheme is as follows:
Embodiments providing the method for packing of a kind of light emitting diode, described method for packing includes:
Arranging compound resin layer on the outer surface of light-emitting diode chip for backlight unit, described compound resin layer includes resin, Graphene and fluorescent material；
Carry out the light-emitting diode chip for backlight unit being coated with described compound resin layer solidifying and dry.
Further, described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including: on the outer surface of described light-emitting diode chip for backlight unit, it is coated with described resin to form the first resin bed；By the powder of described Graphene and described fluorescent material Homogeneous phase mixing；The powder of mixed described Graphene and described fluorescent material are coated with the outer surface being located at described first resin bed.
Further, the described powder by described Graphene and described fluorescent material Homogeneous phase mixing, including: the powder of described Graphene and the mole mixture ratio example of described fluorescent material are 0.5:1 to 5:1.
Further, described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including: on the outer surface of described light-emitting diode chip for backlight unit, it is coated with described resin to form the first resin bed；Outer surface at described first resin bed is coated with the powder of described Graphene to form the first graphene layer；Described first graphene layer is coated with described fluorescent material to form the first phosphor powder layer；Described first phosphor powder layer is coated with the powder of described Graphene to form the second graphene layer.
Further, described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including: on the outer surface of described light-emitting diode chip for backlight unit, it is coated with described resin to form the first resin bed；By hydro-thermal method, the powder of described Graphene is made the graphene layer with high-specific surface area；Described graphene layer is arranged on the outer surface of described first resin bed；Described graphene layer is coated with described fluorescent material to form the second phosphor powder layer.
Further, described graphene layer is alveolate texture.
Further, described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including: the outer surface at described light-emitting diode chip for backlight unit is coated with the powder of described Graphene to form the 3rd graphene layer；Described 3rd graphene layer is coated with described fluorescent material to form the 3rd fluorescence coating；Described 3rd fluorescence coating arranges the second resin bed.
Further, described second resin bed includes two the 3rd resin beds by described resin formation and the thin film of described Graphene being folded between said two the 3rd resin bed.
Further, described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including: on the outer surface of described light-emitting diode chip for backlight unit, it is coated with described resin to form the first resin bed；Outer surface at described first resin bed arranges the thin film of described Graphene to form the 4th graphene layer；Described 4th graphene layer is coated with described fluorescent material to form the 3rd phosphor powder layer.
Further, bonding by binding agent between described Graphene with described resin.
The technical scheme that the embodiment of the present invention provides has the benefit that
By when encapsulating light emitting diode chip for backlight unit, the outer surface of light-emitting diode chip for backlight unit arranges compound resin layer, this compound resin layer includes resin, Graphene and fluorescent material, owing to Graphene has good heat conductivity, and the compound resin layer including Graphene is arranged on the outer surface of light-emitting diode chip for backlight unit, so that the heat that light-emitting diode chip for backlight unit sends can be distributed by compound resin layer, so that light emitting diode can have good heat dispersion.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in the embodiment of the present invention, below the accompanying drawing used required during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the method for packing flow chart of a kind of light emitting diode that the embodiment of the present invention one provides；
Fig. 2 is the method for packing flow chart of the another kind of light emitting diode that the embodiment of the present invention two provides；
Fig. 3 is the method for packing flow chart of the another kind of light emitting diode that the embodiment of the present invention three provides；
Fig. 4 is the method for packing flow chart of the another kind of light emitting diode that the embodiment of the present invention four provides；
Fig. 5 is the method for packing flow chart of the another kind of light emitting diode that the embodiment of the present invention five provides；
Fig. 6 is the method for packing flow chart of the another kind of light emitting diode that the embodiment of the present invention six provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment one
The method for packing of a kind of light emitting diode that the embodiment of the present invention provides, as it is shown in figure 1, this method for packing includes:
Step 101: arranging compound resin layer on the outer surface of light-emitting diode chip for backlight unit, described compound resin layer includes resin, Graphene and fluorescent material.
Step 102: the light-emitting diode chip for backlight unit being coated with compound resin layer is carried out solidification dry.
The present embodiment is by when encapsulating light emitting diode chip for backlight unit, the outer surface of light-emitting diode chip for backlight unit arranges compound resin layer, this compound resin layer includes resin, Graphene and fluorescent material, owing to Graphene has good heat conductivity, and the compound resin layer including Graphene is arranged on the outer surface of light-emitting diode chip for backlight unit, so that the heat that light-emitting diode chip for backlight unit sends can be distributed by compound resin layer, so that light emitting diode can have good heat dispersion.
Embodiment two
Embodiments provide the method for packing of another kind of light emitting diode, as in figure 2 it is shown, this method for packing includes:
Step 201: be coated with resin on the outer surface of light-emitting diode chip for backlight unit to form the first resin bed.
Step 202: by the powder of Graphene and fluorescent material Homogeneous phase mixing.
When realizing, it is 0.5:1 to 5:1 by the mole mixture ratio example of the powder of Graphene and fluorescent material.What deserves to be explained is, the powder of Graphene and the mole mixture ratio example of fluorescent material can be changed in above-mentioned scope according to actual demand, for instance when the power of light emitting diode increases, it is possible to increase the content of graphene powder therewith, to strengthen radiating effect.
Step 203: the powder of mixed Graphene and fluorescent material are coated with the outer surface being located at the first resin bed, is located on the first resin bed such that it is able to just Graphene and fluorescent material are coated with by one procedure simultaneously, enters to decrease operation, improve production efficiency.It should be noted that in other embodiments, it is also possible to the powder of mixed Graphene and fluorescent material are coated with the inner surface being located at the first resin bed, and the present invention is without limitation.
Step 204: the light-emitting diode chip for backlight unit being coated with compound resin layer is carried out solidification dry.
When realizing, it is possible to by light emitting diode warm table, the first resin bed being coated with Graphene and fluorescent material is carried out solidification and dry, it is readily appreciated that, in other embodiments, by other equipment, the first resin bed can also be carried out solidification to dry, for instance baking oven etc., the present invention is without limitation.
Embodiment three
Embodiments providing the method for packing of another kind of light emitting diode, referring to Fig. 3, this method for packing includes:
Step 301: be coated with resin on the outer surface of light-emitting diode chip for backlight unit to form the first resin bed.
Step 302: the outer surface at the first resin bed is coated with the powder of Graphene to form the first graphene layer.
Step 303: be coated with fluorescent material on the first graphene layer to form the first phosphor powder layer.
Step 304: be coated with the powder of Graphene on the first phosphor powder layer to form the second graphene layer.
Step 305: the light-emitting diode chip for backlight unit being coated with compound resin layer is carried out solidification dry.
In the present embodiment, the first phosphor powder layer is folded in centre by the first graphene layer and the second graphene layer.When realizing, by binding agent, Graphene and fluorescent material can be bonded together, namely the first graphene layer, the first phosphor powder layer and the second graphene layer are mutually bonded successively, and to play the effect of the structural stability improving light emitting diode, the kind of binding agent is not particularly limited by the present invention.It should be noted that in other embodiments, it is also possible to by otherwise fluorescent material and Graphene being bonded together, for instance adopting the mode etc. of physical absorption, the present invention is without limitation.
Embodiment four
Embodiments providing the method for packing of another kind of light emitting diode, referring to Fig. 4, this method for packing includes:
Step 401: be coated with resin on the outer surface of light-emitting diode chip for backlight unit to form the first resin bed.
Step 402: by hydro-thermal method, the powder of Graphene is made the graphene layer with high-specific surface area.Wherein, specific surface area refers to the total surface area that unit mass material has, so graphene layer being designed as the structure with high-specific surface area can increase the contact range of graphene layer and air, thus improving the radiating effect of graphene layer.
Preferably, graphene layer can be alveolate texture, so that graphene layer not only has higher specific surface area, additionally it is possible to have higher intensity.It should be noted that in other embodiments, the structure of graphene layer is not only limited to above-mentioned preferred version, it is also possible to for other structures, the present invention is without limitation.
Step 403: graphene layer is arranged on the outer surface of the first resin bed.
Step 404: be coated with fluorescent material on graphene layer to form the second phosphor powder layer.
Step 405: the light-emitting diode chip for backlight unit being coated with compound resin layer is carried out solidification dry.
In the present embodiment, owing to adopting hydro-thermal method to process graphene layer for high-specific surface area structure so that the microstructure of the outer surface of graphene layer is complex, so that fluorescent material can be good at being adsorbed on the outer surface of graphene layer.Easy to understand, in the present embodiment, it is possible to adopt the mode of physical absorption Graphene and fluorescent material to be combined, to reach to simplify the effect of production process.
Embodiment five
Embodiments providing the method for packing of another kind of light emitting diode, referring to Fig. 5, this method for packing includes:
Step 501: the outer surface at light-emitting diode chip for backlight unit is coated with the powder of Graphene to form the 3rd graphene layer.
Step 502: be coated with fluorescent material on the 3rd graphene layer to form the 3rd fluorescence coating.
Step 503: the second resin bed is set on the 3rd fluorescence coating.
Specifically, the second resin bed includes by the two of resin formation the 3rd resin beds and the thin film of Graphene that is folded between two the 3rd resin beds.When realizing, it is possible to individually make the second resin bed, so that when encapsulating light emitting diode, it is possible to directly utilize the second resin bed making molding, thus reaching to simplify the purpose of operation.
Step 504: the light-emitting diode chip for backlight unit being coated with compound resin layer is carried out solidification dry.
Embodiment six
Embodiments providing the method for packing of another kind of light emitting diode, referring to Fig. 6, this method for packing includes:
Step 601: be coated with resin on the outer surface of light-emitting diode chip for backlight unit to form the first resin bed.
Step 602: the outer surface at the first resin bed arranges the thin film of Graphene to form the 4th graphene layer.
Step 603: be coated with fluorescent material on the 4th graphene layer to form the 3rd phosphor powder layer.
Step 604: the light-emitting diode chip for backlight unit being coated with compound resin layer is carried out solidification dry.
The present embodiment forms the 4th graphene layer by the thin film of Graphene, owing to the thin film of Graphene has better structural stability relative to the powder of Graphene, so that the structure of the light emitting diode of the present embodiment offer is relatively stable, and then improve the service life of light emitting diode.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (10)
1. the method for packing of a light emitting diode, it is characterised in that described method for packing includes:
Arranging compound resin layer on the outer surface of light-emitting diode chip for backlight unit, described compound resin layer includes resin, Graphene and fluorescent material；
Carry out the light-emitting diode chip for backlight unit being coated with described compound resin layer solidifying and dry.
2. method for packing according to claim 1, it is characterised in that described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including:
The outer surface of described light-emitting diode chip for backlight unit is coated with described resin to form the first resin bed；
By the powder of described Graphene and described fluorescent material Homogeneous phase mixing；
The powder of mixed described Graphene and described fluorescent material are coated with the outer surface being located at described first resin bed.
3. method for packing according to claim 2, it is characterised in that the described powder by described Graphene and described fluorescent material Homogeneous phase mixing, including:
The powder of described Graphene and the mole mixture ratio example of described fluorescent material are 0.5:1 to 5:1.
4. method for packing according to claim 1, it is characterised in that described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including:
The outer surface of described light-emitting diode chip for backlight unit is coated with described resin to form the first resin bed；
Outer surface at described first resin bed is coated with the powder of described Graphene to form the first graphene layer；
Described first graphene layer is coated with described fluorescent material to form the first phosphor powder layer；
Described first phosphor powder layer is coated with the powder of described Graphene to form the second graphene layer.
5. method for packing according to claim 1, it is characterised in that described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including:
The outer surface of described light-emitting diode chip for backlight unit is coated with described resin to form the first resin bed；
By hydro-thermal method, the powder of described Graphene is made the graphene layer with high-specific surface area；
Described graphene layer is arranged on the outer surface of described first resin bed；
Described graphene layer is coated with described fluorescent material to form the second phosphor powder layer.
6. method for packing according to claim 5, it is characterised in that described graphene layer is alveolate texture.
7. method for packing according to claim 1, it is characterised in that described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including:
Outer surface at described light-emitting diode chip for backlight unit is coated with the powder of described Graphene to form the 3rd graphene layer；
Described 3rd graphene layer is coated with described fluorescent material to form the 3rd fluorescence coating；
Described 3rd fluorescence coating arranges the second resin bed.
8. method for packing according to claim 7, it is characterised in that described second resin bed includes two the 3rd resin beds by described resin formation and the thin film of described Graphene being folded between said two the 3rd resin bed.
9. method for packing according to claim 1, it is characterised in that described compound resin layer is set on the outer surface of light-emitting diode chip for backlight unit, including:
The outer surface of described light-emitting diode chip for backlight unit is coated with described resin to form the first resin bed；
Outer surface at described first resin bed arranges the thin film of described Graphene to form the 4th graphene layer；
Described 4th graphene layer is coated with described fluorescent material to form the 3rd phosphor powder layer.
10. method for packing according to claim 1, it is characterised in that bonding by binding agent between described Graphene with described resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610167672.0A CN105720178B (en) | 2016-03-23 | 2016-03-23 | A kind of method for packing of light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610167672.0A CN105720178B (en) | 2016-03-23 | 2016-03-23 | A kind of method for packing of light emitting diode |
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| CN105720178A true CN105720178A (en) | 2016-06-29 |
| CN105720178B CN105720178B (en) | 2018-04-24 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110124A (en) * | 2016-11-25 | 2018-06-01 | 佛山市国星光电股份有限公司 | A kind of TOP-LED devices and its manufacturing method |
| WO2020133160A1 (en) * | 2018-12-25 | 2020-07-02 | 弗洛里光电材料（苏州）有限公司 | Composite phosphor film and application thereof |
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| US20120229981A1 (en) * | 2011-03-09 | 2012-09-13 | Chen-Lung Lin | Electrically insulating and thermally conductive composition and electronic device |
| CN103811651A (en) * | 2012-11-12 | 2014-05-21 | 铼钻科技股份有限公司 | Heat-conducting composite material and light-emitting diode derived from same |
| US20150228869A1 (en) * | 2014-02-11 | 2015-08-13 | Samsung Electronics Co., Ltd. | Light source package and display device including the same |
| CN104910828A (en) * | 2015-06-01 | 2015-09-16 | 深圳新宙邦科技股份有限公司 | Adhesive for LED (light emitting diode), adhesive preparation method and LED lamp |
| US20160079478A1 (en) * | 2014-09-15 | 2016-03-17 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device package |
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2016
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1682381A (en) * | 2002-09-30 | 2005-10-12 | 丰田合成株式会社 | White light emitting device |
| US20120229981A1 (en) * | 2011-03-09 | 2012-09-13 | Chen-Lung Lin | Electrically insulating and thermally conductive composition and electronic device |
| CN103811651A (en) * | 2012-11-12 | 2014-05-21 | 铼钻科技股份有限公司 | Heat-conducting composite material and light-emitting diode derived from same |
| US20150228869A1 (en) * | 2014-02-11 | 2015-08-13 | Samsung Electronics Co., Ltd. | Light source package and display device including the same |
| US20160079478A1 (en) * | 2014-09-15 | 2016-03-17 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device package |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108110124A (en) * | 2016-11-25 | 2018-06-01 | 佛山市国星光电股份有限公司 | A kind of TOP-LED devices and its manufacturing method |
| WO2020133160A1 (en) * | 2018-12-25 | 2020-07-02 | 弗洛里光电材料（苏州）有限公司 | Composite phosphor film and application thereof |
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| Publication number | Publication date |
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| CN105720178B (en) | 2018-04-24 |
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