CN109950149B - Method for manufacturing diode - Google Patents
Method for manufacturing diode Download PDFInfo
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- CN109950149B CN109950149B CN201910188297.1A CN201910188297A CN109950149B CN 109950149 B CN109950149 B CN 109950149B CN 201910188297 A CN201910188297 A CN 201910188297A CN 109950149 B CN109950149 B CN 109950149B
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Abstract
The invention provides a manufacturing method of a diode, which comprises the following steps: preparing a monocrystalline silicon wafer, dividing the monocrystalline silicon wafer into a P region and an N region, doping boron element into the P region, doping phosphorus element into the N region to obtain a diode chip, and forming a PN junction at the junction of the P region and the N region, wherein the PN junction comprises a first plane part, an extension part and a second plane part; sending the diode chip into an oxidation furnace, and forming a layer of silicon dioxide oxide film on the outer side of the diode chip; corroding grooves at two ends of the diode chip by using corrosive liquid; manufacturing a resistor: depositing crystalline carbon materials at the middle position of the bottoms of the two grooves to enable two ends of the P area and the N area to be provided with a resistor; and sputtering a layer of aluminum film at both ends of the diode chip to finish the manufacture. According to the manufacturing method of the diode, the manufactured diode has excellent conductive stability.
Description
Technical Field
The invention relates to the technical field of diode processing, in particular to a manufacturing method of a diode.
Background
With the rapid development of technology, electronic technology is continuously innovated and modified, and electronic components are widely used, so that the manufacturing amount of electronic components is continuously increased, and the usage amount of diodes as an important device in electronic components is also continuously increased. According to the diode production process in the prior art, a diode product is obtained after oxidation, corrosion, ion implantation and metallization, because the ion implantation of boron or phosphorus is carried out from the outer side surface of a monocrystalline silicon piece, the concentration of elements closer to the inside of the monocrystalline silicon piece is more difficult to control along with the change of the implantation depth, the product obtained by the method is often defective, namely the concentration of the boron or phosphorus at the inner side is too low, namely the conductivity of the middle part of the diode is weaker, and the overall conductivity stability of the diode is influenced.
Disclosure of Invention
In view of the above problems, the present invention provides a method for manufacturing a diode, and the manufactured diode has excellent conductive stability.
In order to achieve the purpose, the invention is solved by the following technical scheme:
a method for manufacturing a diode comprises the following steps:
s1 doping: preparing a monocrystalline silicon wafer, dividing the monocrystalline silicon wafer into a P region and an N region, doping boron element into the P region, doping phosphorus element into the N region to obtain a diode chip, and forming a PN junction at the junction of the P region and the N region, wherein the PN junction comprises a first plane part, an extension part and a second plane part;
s2 oxidation: sending the diode chip into an oxidation furnace, and forming a layer of silicon dioxide oxide film on the outer side of the diode chip;
s3 corrosion: corroding grooves at two ends of the diode chip by using corrosive liquid;
s4, making a resistor: depositing crystalline carbon materials at the middle position of the bottoms of the two grooves to enable two ends of the P area and the N area to be provided with a resistor;
s5 metallization: and sputtering a layer of aluminum film at both ends of the diode chip to finish the manufacture.
Specifically, the S3 corrosion process further includes the following steps:
s31, coating a layer of photoresist on two ends of the silicon dioxide oxide film;
s32, placing a layer of mask on both sides of the photoresist, hardening the edge of the photoresist after exposure and development, removing the unhardened photoresist in the middle, and forming a hole groove in the middle of the photoresist;
s33, injecting the corrosive liquid into the hole groove, corroding grooves at two ends of the diode chip by using the corrosive liquid, and removing the hardened photoresist.
Specifically, the corrosive liquid is a mixed solution of hydrofluoric acid, sulfuric acid and nitric acid.
Specifically, the structure of the extension part is one of circular arc, wave, sawtooth and concave-convex.
Specifically, the temperature of the oxidation furnace in the step S2 is 800-1100 ℃, and the oxidation time is 5-8 min.
Specifically, the width of the resistor is smaller than the width of the groove.
Specifically, the resistance value of the resistor is 0.35-3.5 omega.
The invention has the beneficial effects that:
according to the manufacturing method of the diode, the extension part is additionally arranged in the middle of the PN junction, the contact area of the P region and the N region is increased, the conductivity of the middle part is improved, meanwhile, the resistors with small resistance values are additionally arranged at the two ends of the P region and the N region, electrons entering the diode preferentially pass through the edge of the diode, the moving path of the electrons is dredged, the electrons are prevented from being concentrated in the middle of the PN junction and passing through the middle of the PN junction, the overall conductivity of the diode is improved, and the reverse conduction performance of the diode is improved.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a diode according to the present invention.
Fig. 2 is a schematic structural diagram of a diode product manufactured by the present invention.
Fig. 3 is a schematic structural diagram of a diode chip in embodiment 1, wherein the extension portion has an arc shape.
Fig. 4 is a schematic structural diagram of a diode chip in embodiment 2, wherein the extension portion has a wave-shaped structure.
Fig. 5 is a schematic structural diagram of a diode chip in embodiment 3, wherein the extension portion has a zigzag structure.
Fig. 6 is a schematic structural diagram of a diode chip in embodiment 4, in which the extension has a concave-convex structure.
The reference signs are: the silicon single crystal wafer comprises a single crystal silicon wafer 1, a P region 11, an N region 12, a first plane part 21, an extension part 22, a second plane part 23, a silicon dioxide oxide film 3, a groove 4, a crystalline carbon material 5, an aluminum film 6, a photoresist 7, a mask 8 and a hole groove 9.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
Example 1
As shown in fig. 1-3: a method for manufacturing a diode comprises the following steps:
s1 doping: preparing a monocrystalline silicon wafer 1, dividing the monocrystalline silicon wafer 1 into a P region 11 and an N region 12, doping boron into the P region 11, doping phosphorus into the N region 12 to obtain a diode chip, and forming a PN junction at the junction of the P region 11 and the N region 12, wherein the PN junction comprises a first plane part 21, an extension part 22 and a second plane part 23;
s2 oxidation: conveying the diode chip into an oxidation furnace, wherein the temperature of the oxidation furnace is 800-1100 ℃, the oxidation time is 5-8 min, and a layer of silicon dioxide oxide film 3 is formed on the outer side of the diode chip;
s31, coating a layer of photoresist 7 on two ends of the silicon dioxide oxide film 3;
s32, placing a layer of mask 8 on both sides of the photoresist 7, after exposure and development, hardening the edge of the photoresist 7, removing the unhardened photoresist 7 in the middle, and forming a hole groove 9 in the middle of the photoresist 7;
s33, injecting the corrosive liquid into the hole groove 9, corroding grooves 4 at both ends of the diode chip by using the corrosive liquid, and removing the hardened photoresist 7;
s4, making a resistor: depositing a crystalline carbon material 5 at the middle position of the bottoms of the two grooves 4, so that two ends of the P area 11 and the N area 12 are provided with a resistor with the resistance value of 0.35-3.5 omega;
s5 metallization: and sputtering a layer of aluminum film 6 at both ends of the diode chip to finish the manufacture.
Preferably, the etching solution is a mixed solution of hydrofluoric acid, sulfuric acid and nitric acid.
Preferably, the extension 22 has a circular arc shape.
Preferably, in order to prevent the current flowing through the aluminum film 6 from passing entirely through the resistor, the width of the resistor is smaller than the width of the groove 4.
Example 2
As shown in fig. 1, 2 and 4: a method for manufacturing a diode comprises the following steps:
s1 doping: preparing a monocrystalline silicon wafer 1, dividing the monocrystalline silicon wafer 1 into a P region 11 and an N region 12, doping boron into the P region 11, doping phosphorus into the N region 12 to obtain a diode chip, and forming a PN junction at the junction of the P region 11 and the N region 12, wherein the PN junction comprises a first plane part 21, an extension part 22 and a second plane part 23;
s2 oxidation: conveying the diode chip into an oxidation furnace, wherein the temperature of the oxidation furnace is 800-1100 ℃, the oxidation time is 5-8 min, and a layer of silicon dioxide oxide film 3 is formed on the outer side of the diode chip;
s31, coating a layer of photoresist 7 on two ends of the silicon dioxide oxide film 3;
s32, placing a layer of mask 8 on both sides of the photoresist 7, after exposure and development, hardening the edge of the photoresist 7, removing the unhardened photoresist 7 in the middle, and forming a hole groove 9 in the middle of the photoresist 7;
s33, injecting the corrosive liquid into the hole groove 9, corroding grooves 4 at both ends of the diode chip by using the corrosive liquid, and removing the hardened photoresist 7;
s4, making a resistor: depositing a crystalline carbon material 5 at the middle position of the bottoms of the two grooves 4, so that two ends of the P area 11 and the N area 12 are provided with a resistor with the resistance value of 0.35-3.5 omega;
s5 metallization: and sputtering a layer of aluminum film 6 at both ends of the diode chip to finish the manufacture.
Preferably, the etching solution is a mixed solution of hydrofluoric acid, sulfuric acid and nitric acid.
Preferably, the extension 22 is of a wave-like configuration.
Preferably, in order to prevent the current flowing through the aluminum film 6 from passing entirely through the resistor, the width of the resistor is smaller than the width of the groove 4.
Example 3
As shown in fig. 1, 2 and 5: a method for manufacturing a diode comprises the following steps:
s1 doping: preparing a monocrystalline silicon wafer 1, dividing the monocrystalline silicon wafer 1 into a P region 11 and an N region 12, doping boron into the P region 11, doping phosphorus into the N region 12 to obtain a diode chip, and forming a PN junction at the junction of the P region 11 and the N region 12, wherein the PN junction comprises a first plane part 21, an extension part 22 and a second plane part 23;
s2 oxidation: conveying the diode chip into an oxidation furnace, wherein the temperature of the oxidation furnace is 800-1100 ℃, the oxidation time is 5-8 min, and a layer of silicon dioxide oxide film 3 is formed on the outer side of the diode chip;
s31, coating a layer of photoresist 7 on two ends of the silicon dioxide oxide film 3;
s32, placing a layer of mask 8 on both sides of the photoresist 7, after exposure and development, hardening the edge of the photoresist 7, removing the unhardened photoresist 7 in the middle, and forming a hole groove 9 in the middle of the photoresist 7;
s33, injecting the corrosive liquid into the hole groove 9, corroding grooves 4 at both ends of the diode chip by using the corrosive liquid, and removing the hardened photoresist 7;
s4, making a resistor: depositing a crystalline carbon material 5 at the middle position of the bottoms of the two grooves 4, so that two ends of the P area 11 and the N area 12 are provided with a resistor with the resistance value of 0.35-3.5 omega;
s5 metallization: and sputtering a layer of aluminum film 6 at both ends of the diode chip to finish the manufacture.
Preferably, the etching solution is a mixed solution of hydrofluoric acid, sulfuric acid and nitric acid.
Preferably, the extension 22 is of a saw-tooth configuration.
Preferably, in order to prevent the current flowing through the aluminum film 6 from passing entirely through the resistor, the width of the resistor is smaller than the width of the groove 4.
Example 4
As shown in fig. 1, 2 and 6: a method for manufacturing a diode comprises the following steps:
s1 doping: preparing a monocrystalline silicon wafer 1, dividing the monocrystalline silicon wafer 1 into a P region 11 and an N region 12, doping boron into the P region 11, doping phosphorus into the N region 12 to obtain a diode chip, and forming a PN junction at the junction of the P region 11 and the N region 12, wherein the PN junction comprises a first plane part 21, an extension part 22 and a second plane part 23;
s2 oxidation: conveying the diode chip into an oxidation furnace, wherein the temperature of the oxidation furnace is 800-1100 ℃, the oxidation time is 5-8 min, and a layer of silicon dioxide oxide film 3 is formed on the outer side of the diode chip;
s31, coating a layer of photoresist 7 on two ends of the silicon dioxide oxide film 3;
s32, placing a layer of mask 8 on both sides of the photoresist 7, after exposure and development, hardening the edge of the photoresist 7, removing the unhardened photoresist 7 in the middle, and forming a hole groove 9 in the middle of the photoresist 7;
s33, injecting the corrosive liquid into the hole groove 9, corroding grooves 4 at both ends of the diode chip by using the corrosive liquid, and removing the hardened photoresist 7;
s4, making a resistor: depositing a crystalline carbon material 5 at the middle position of the bottoms of the two grooves 4, so that two ends of the P area 11 and the N area 12 are provided with a resistor with the resistance value of 0.35-3.5 omega;
s5 metallization: and sputtering a layer of aluminum film 6 at both ends of the diode chip to finish the manufacture.
Preferably, the etching solution is a mixed solution of hydrofluoric acid, sulfuric acid and nitric acid.
Preferably, the extension 22 has a concavo-convex configuration.
Preferably, in order to prevent the current flowing through the aluminum film 6 from passing entirely through the resistor, the width of the resistor is smaller than the width of the groove 4.
The above examples only show 4 embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (5)
1. A manufacturing method of a diode is characterized by comprising the following steps:
s1 doping: preparing a monocrystalline silicon wafer (1), dividing the monocrystalline silicon wafer (1) into a P region (11) and an N region (12), doping boron elements into the P region (11), doping phosphorus elements into the N region (12) to obtain a diode chip, and forming a PN junction at the junction of the P region (11) and the N region (12), wherein the PN junction comprises a first plane part (21), an extension part (22) and a second plane part (23);
s2 oxidation: sending the diode chip into an oxidation furnace, and forming a layer of silicon dioxide oxide film (3) on the outer side of the diode chip;
s3 corrosion: corroding grooves (4) at two ends of the diode chip by using corrosive liquid;
s4, making a resistor: depositing a crystalline carbon material (5) at the middle position of the bottoms of the two grooves (4), and enabling two ends of the P area (11) and the N area (12) to be respectively provided with a resistor, wherein the width of the resistor is smaller than that of the grooves (4), and the resistance value of the resistor is 0.35-3.5 omega;
s5 metallization: and sputtering a layer of aluminum film (6) at both ends of the diode chip to finish the manufacture.
2. The method of claim 1, wherein the etching process of S3 further comprises the steps of:
s31, coating a layer of photoresist (7) at two ends of the silicon dioxide oxide film (3);
s32, placing a layer of mask (8) on both sides of the photoresist (7), hardening the edge of the photoresist (7) after exposure and development, removing the unhardened photoresist (7) in the middle, and forming a hole groove (9) in the middle of the photoresist (7);
s33, injecting an etching solution into the hole groove (9), etching grooves (4) at both ends of the diode chip by using the etching solution, and removing the hardened photoresist (7).
3. The method of claim 2, wherein the etching solution is a mixture of hydrofluoric acid, sulfuric acid and nitric acid.
4. The method of claim 1, wherein the extension (22) has one of a circular arc shape, a wave shape, a saw-tooth shape, and a concave-convex shape.
5. The method for manufacturing a diode according to claim 1, wherein the temperature of the oxidation furnace in the step S2 is 800 to 1100 ℃, and the oxidation time is 5 to 8 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910188297.1A CN109950149B (en) | 2019-03-13 | 2019-03-13 | Method for manufacturing diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910188297.1A CN109950149B (en) | 2019-03-13 | 2019-03-13 | Method for manufacturing diode |
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| CN109950149B true CN109950149B (en) | 2022-01-11 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543722A (en) * | 2011-12-26 | 2012-07-04 | 天津中环半导体股份有限公司 | High-voltage transient voltage suppressor chip and production process |
| CN203941903U (en) * | 2014-06-09 | 2014-11-12 | 苏州市职业大学 | A kind of transient voltage suppresses semiconductor device |
| CN105870078A (en) * | 2016-06-12 | 2016-08-17 | 浙江明德微电子股份有限公司 | Chip structure for effectively increasing PN junction area and manufacturing method thereof |
| CN108269859A (en) * | 2017-12-12 | 2018-07-10 | 北京时代民芯科技有限公司 | A kind of bilateral transient voltage suppression diode and manufacturing method |
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2019
- 2019-03-13 CN CN201910188297.1A patent/CN109950149B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543722A (en) * | 2011-12-26 | 2012-07-04 | 天津中环半导体股份有限公司 | High-voltage transient voltage suppressor chip and production process |
| CN203941903U (en) * | 2014-06-09 | 2014-11-12 | 苏州市职业大学 | A kind of transient voltage suppresses semiconductor device |
| CN105870078A (en) * | 2016-06-12 | 2016-08-17 | 浙江明德微电子股份有限公司 | Chip structure for effectively increasing PN junction area and manufacturing method thereof |
| CN108269859A (en) * | 2017-12-12 | 2018-07-10 | 北京时代民芯科技有限公司 | A kind of bilateral transient voltage suppression diode and manufacturing method |
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| CN109950149A (en) | 2019-06-28 |
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Address after: 517300 No. 10-4, Shenzhen Bao'an (Longchuan) industrial transfer industrial park, Dengyun Town, Longchuan County, Heyuan City, Guangdong Province Applicant after: HEYUAN CHUANGJI ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: No. 10-4, Shenzhen Nanshan (Longchuan) industrial transfer park, Heyuan City, Guangdong Province, 517300 Applicant before: HEYUAN CHUANGJI ELECTRONIC TECHNOLOGY Co.,Ltd. |
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