CN109950134B - Structure with oxide thin film and preparation method thereof - Google Patents
Structure with oxide thin film and preparation method thereof Download PDFInfo
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- CN109950134B CN109950134B CN201910208949.3A CN201910208949A CN109950134B CN 109950134 B CN109950134 B CN 109950134B CN 201910208949 A CN201910208949 A CN 201910208949A CN 109950134 B CN109950134 B CN 109950134B
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- 239000010409 thin film Substances 0.000 title claims description 140
- 238000002360 preparation method Methods 0.000 title abstract description 15
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 218
- 230000004888 barrier function Effects 0.000 claims abstract description 181
- 238000009792 diffusion process Methods 0.000 claims abstract description 180
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- 239000010408 film Substances 0.000 claims description 113
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 90
- 238000000034 method Methods 0.000 claims description 88
- 229910052760 oxygen Inorganic materials 0.000 claims description 79
- 239000001301 oxygen Substances 0.000 claims description 79
- 230000008569 process Effects 0.000 claims description 63
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 229910044991 metal oxide Inorganic materials 0.000 claims description 26
- 150000004706 metal oxides Chemical class 0.000 claims description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 20
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 14
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 10
- 239000005751 Copper oxide Substances 0.000 claims description 10
- 229910000431 copper oxide Inorganic materials 0.000 claims description 10
- 229910003437 indium oxide Inorganic materials 0.000 claims description 10
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 10
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 10
- 229910001923 silver oxide Inorganic materials 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- 229910001887 tin oxide Inorganic materials 0.000 claims description 10
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 327
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 23
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 17
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 8
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000005641 tunneling Effects 0.000 description 8
- 229910001935 vanadium oxide Inorganic materials 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 239000002346 layers by function Substances 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 6
- 229910015711 MoOx Inorganic materials 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000009279 wet oxidation reaction Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
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- 238000006731 degradation reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
本发明提供一种具有氧化物薄膜的结构及其制备方法，包括如下步骤：制备氧化物薄膜，氧化物薄膜的至少一表面形成有氧原子扩散阻挡层。本发明通过在氧化物薄膜的至少一表面形成氧原子扩散阻挡层，可以避免氧化物薄膜与衬底或金属电极直接接触，保证氧化物薄膜中的氧原子不会被衬底或金属电极夺取，确保氧化物薄膜的导电率、功函数及折射率等性质不会发生变化，从而确保器件的功能，确保器件不会失效。
The invention provides a structure with an oxide film and a preparation method thereof, comprising the steps of: preparing an oxide film, and forming an oxygen atom diffusion barrier layer on at least one surface of the oxide film. In the present invention, by forming an oxygen atom diffusion barrier layer on at least one surface of the oxide film, the direct contact between the oxide film and the substrate or the metal electrode can be avoided, and the oxygen atoms in the oxide film can be guaranteed not to be captured by the substrate or the metal electrode. It is ensured that properties such as conductivity, work function and refractive index of the oxide film will not change, thereby ensuring the function of the device and ensuring that the device will not fail.
Description
Technical Field
The invention belongs to the technical field of semiconductor material and device preparation, and particularly relates to a structure with an oxide film and a preparation method thereof.
Background
Oxide thin films are widely used as functional layers such as carrier transport layers and insulating layers in semiconductor devices, and can be prepared on the surface of a substrate (such as Si) by sputtering, Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD), and other techniques. The quality of the interface between the oxide film and the substrate greatly affects the performance of the device.
When the oxide film is grown on a Si substrate, according to the Gibbs free energy formula:
ΔG＝ΔH-TΔS
when the enthalpy of formation of the oxide film is larger than that of SiO2(-) 859.4kJ/mol, (. DELTA.H)<0,ΔG<0) Si spontaneously abstracts O (in the oxide film)Oxygen) atoms, a layer of nano-sized SiOx (0) is formed at the interface between the oxide film and the substrate<x<2) A layer that generates oxygen vacancies in the oxide thin film.
Also, when a metal electrode is formed on the oxide thin film, when the enthalpy of formation of the oxide thin film is greater than the enthalpy of formation of the metal oxide of the metal electrode, the metal electrode spontaneously deprives O atoms in the oxide thin film, and a nanoscale metal oxide layer is formed at the interface between the oxide thin film and the metal electrode, so that oxygen vacancies are generated in the oxide thin film.
These oxygen vacancies can cause changes in the properties of the oxide film, such as conductivity, work function, refractive index, etc., thereby causing the device to fail certain functions, i.e., causing the device to degrade in performance, and in serious cases causing the entire device to fail.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a structure having an oxide thin film and a method for preparing the same, which are used to solve the problems that in the prior art, when the oxide thin film is in direct contact with a substrate or a metal electrode, oxygen vacancies are easily formed in the oxide thin film, which causes changes in properties of the oxide thin film, such as conductivity, work function, refractive index, etc., and further causes the device to fail to achieve certain functions, i.e., causes performance degradation of the device, and seriously causes failure of the entire device.
To achieve the above and other related objects, the present invention provides a method for preparing a structure having an oxide thin film, the method comprising the steps of:
preparing an oxide film, wherein an oxygen atom diffusion barrier layer is formed on at least one surface of the oxide film.
Alternatively, the method for preparing the structure having the oxide thin film includes the steps of:
providing a substrate;
forming the oxygen atom diffusion barrier layer on the upper surface of the substrate;
and forming the oxide film on the upper surface of the oxygen atom diffusion barrier layer.
Optionally, the upper surface of the substrate is treated by using a nitric acid oxidation process, an ultraviolet light induced oxidation process, an ozone-containing water wet oxidation process, a dry oxidation process, an ozone treatment process, or an oxygen plasma treatment process to form the oxygen atom diffusion barrier layer on the upper surface of the substrate.
Optionally, the substrate comprises a silicon substrate and the oxygen atom diffusion barrier layer comprises a silicon oxide layer.
Alternatively, the method for preparing the structure having the oxide thin film includes the steps of:
preparing the oxide thin film;
and forming the oxygen atom diffusion barrier layer on the upper surface of the oxide film.
Optionally, the forming the oxygen atom diffusion barrier layer on the upper surface of the oxide film comprises the following steps:
processing the upper surface of the oxide film to form an oxygen-rich layer on the upper surface of the oxide film, wherein the proportion of oxygen atoms in the oxygen-rich layer is greater than that of the oxygen atoms in the oxide film;
and forming a metal electrode on the upper surface of the oxygen-enriched layer, wherein the metal electrode reacts with the oxygen-enriched layer to form a metal oxide layer between the metal electrode and the oxide film to serve as the oxygen atom diffusion barrier layer.
Optionally, the upper surface of the oxide thin film is treated by an ozone treatment process to form the oxygen-rich layer on the upper surface of the oxide thin film.
Optionally, the method further includes the following steps after forming the oxygen atom diffusion barrier layer on the upper surface of the oxide thin film: and forming a metal electrode on the upper surface of the oxygen atom diffusion barrier layer, wherein the formation enthalpy of the metal oxide of the metal electrode is not less than that of the oxygen atom diffusion barrier layer.
Optionally, the atomic oxygen diffusion barrier layer comprises at least one of an aluminum oxide, a silicon oxide layer, a hafnium oxide layer, a vanadium oxide layer, a molybdenum oxide layer, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, an indium oxide layer, an aluminum nitride layer, and a silicon nitride layer.
Optionally, a substrate is provided, and the oxide thin film is prepared on the substrate.
Optionally, the oxygen atom diffusion barrier layer comprises a thickness of 1 nm to 10 nm.
Alternatively, the method for preparing the structure having the oxide thin film includes the steps of:
providing a substrate;
forming a first oxygen atom diffusion barrier layer on the upper surface of the substrate;
forming the oxide film on the upper surface of the first oxygen atom diffusion barrier layer;
and forming a second oxygen atom diffusion barrier layer on the upper surface of the oxide film.
Optionally, the upper surface of the substrate is treated by using a nitric acid oxidation process, an ultraviolet light induced oxidation process, an ozone-containing water wet oxidation process, a dry oxidation process, an ozone treatment process, or an oxygen plasma treatment process to form the first oxygen atom diffusion barrier layer on the upper surface of the substrate.
Optionally, the substrate comprises a silicon substrate, and the first oxygen atom diffusion barrier layer comprises a silicon oxide layer.
Optionally, the step of forming a second oxygen atom diffusion barrier layer on the upper surface of the oxide film comprises:
processing the upper surface of the oxide film to form an oxygen-rich layer on the upper surface of the oxide film, wherein the proportion of oxygen atoms in the oxygen-rich layer is greater than that of the oxygen atoms in the oxide film;
and forming a metal electrode on the upper surface of the oxygen-enriched layer, wherein the metal electrode reacts with the oxygen-enriched layer to form a metal oxide layer between the metal electrode and the oxide film to serve as the second oxygen atom diffusion barrier layer.
Optionally, the upper surface of the oxide thin film is treated by an ozone treatment process to form the oxygen-rich layer on the upper surface of the oxide thin film.
Optionally, the method further includes the following steps after forming the second oxygen atom diffusion barrier layer on the upper surface of the oxide film: and forming a metal electrode on the upper surface of the second oxygen atom diffusion impervious layer, wherein the formation enthalpy of the metal oxide of the metal electrode is not less than the formation enthalpy of the second oxygen atom diffusion impervious layer.
Optionally, the second atomic oxygen diffusion barrier layer comprises at least one of an aluminum oxide, a silicon oxide layer, a hafnium oxide layer, a vanadium oxide layer, a molybdenum oxide layer, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, an indium oxide layer, an aluminum nitride layer, and a silicon nitride layer.
Optionally, a thickness of the first oxygen atom diffusion barrier layer includes 1 nm to 10 nm, and a thickness of the second oxygen atom diffusion barrier layer includes 1 nm to 10 nm.
The present invention also provides a structure having an oxide thin film, the structure having an oxide thin film comprising:
an oxide film, at least one surface of which is formed with an oxygen atom diffusion barrier layer.
Optionally, the structure with the oxide thin film further includes: the substrate is positioned on the lower surface of the oxygen atom diffusion barrier layer, and the oxygen atom diffusion barrier layer is positioned on the lower surface of the oxide film.
Optionally, the substrate comprises a silicon substrate and the oxygen atom diffusion barrier layer comprises a silicon oxide layer.
Optionally, the structure with the oxide thin film further includes a metal electrode, the oxygen atom diffusion barrier layer is located on the upper surface of the oxide thin film, the metal electrode is located on the upper surface of the oxygen atom diffusion barrier layer, and enthalpy of formation of metal oxide of the metal electrode is not less than enthalpy of formation of the oxygen atom diffusion barrier layer.
Optionally, the atomic oxygen diffusion barrier layer comprises at least one of an aluminum oxide, a silicon oxide layer, a hafnium oxide layer, a vanadium oxide layer, a molybdenum oxide layer, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, an indium oxide layer, an aluminum nitride layer, and a silicon nitride layer.
Optionally, the structure with the oxide thin film further comprises a substrate, and the substrate is located on the lower surface of the oxide thin film.
Optionally, the oxygen atom diffusion barrier layer comprises a thickness of 1 nm to 10 nm.
Optionally, the oxygen atom diffusion barrier layer comprises a first oxygen atom barrier layer and a second oxygen atom barrier layer; the structure having an oxide thin film further includes:
the first oxygen atom barrier layer is positioned on the upper surface of the substrate; the oxide film is positioned on the upper surface of the first oxygen atom barrier layer; the second oxygen atom barrier layer is positioned on the upper surface of the oxide film;
and the metal electrode is positioned on the upper surface of the second oxygen atom barrier layer.
Optionally, the substrate comprises a silicon substrate, the first atomic oxygen diffusion barrier layer comprises a silicon oxide layer, and the second atomic oxygen diffusion barrier layer comprises at least one of an aluminum oxide, a silicon oxide layer, a hafnium oxide layer, a vanadium oxide layer, a molybdenum oxide layer, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, an indium oxide layer, an aluminum nitride layer, and a silicon nitride layer.
Optionally, a thickness of the first oxygen atom diffusion barrier layer includes 1 nm to 10 nm, and a thickness of the second oxygen atom diffusion barrier layer includes 1 nm to 10 nm.
As described above, the structure having an oxide thin film and the method for preparing the same according to the present invention have the following advantageous effects:
according to the invention, the oxygen atom diffusion barrier layer is formed on at least one surface of the oxide film, so that the oxide film can be prevented from being directly contacted with the substrate or the metal electrode, oxygen atoms in the oxide film can be prevented from being captured by the substrate or the metal electrode, and properties such as conductivity, work function, refractive index and the like of the oxide film can be prevented from being changed, so that the function of the device can be ensured, and the device can be prevented from failing.
Drawings
Fig. 1 to 3 are schematic cross-sectional structures of structures obtained in steps of a method for manufacturing a structure having an oxide thin film according to a first embodiment of the present invention.
Fig. 4 to 9 are schematic cross-sectional structures of structures obtained in steps of the method for preparing a structure having an oxide thin film according to the third embodiment of the present invention.
Fig. 10 to 16 are schematic cross-sectional structures of structures obtained in the steps of the method for preparing a structure having an oxide thin film according to the fifth embodiment of the present invention.
Description of the element reference numerals
1 thin film of oxide
11 oxygen-rich layer
2 oxygen atom diffusion barrier layer
21 first oxygen atom diffusion barrier layer
22 second oxygen atom diffusion barrier layer
3 substrate
4 metal electrode
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1 to 12. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
The invention provides a preparation method of a structure with an oxide film, which comprises the following steps: preparing an oxide film, wherein an oxygen atom diffusion barrier layer is formed on at least one surface of the oxide film. The method and the specific structure of the oxide film including the oxide film having at least one surface on which the oxygen atom diffusion barrier layer is formed may be various, and detailed description will be given below with reference to specific embodiments.
Example one
Referring to fig. 1 to 3, the present invention provides a method for preparing a structure having an oxide thin film, including the steps of:
1) providing a substrate;
2) forming the oxygen atom diffusion barrier layer on the upper surface of the substrate;
3) and forming the oxide film on the upper surface of the oxygen atom diffusion barrier layer.
In step 1), referring to fig. 1, a substrate 3 is provided.
As an example, the substrate 3 may include, but is not limited to, a silicon (Si) substrate.
In step 2), referring to fig. 2, the oxygen atom diffusion barrier layer 2 is formed on the upper surface of the substrate 3.
As an example, the upper surface of the substrate 3 may be treated using a nitric acid oxidation treatment process, an ultraviolet light induced oxidation process, an ozone-containing water wet oxidation process, a dry oxidation process, an ozone treatment process, or an oxygen plasma treatment process to form the oxygen atom diffusion barrier layer 2 on the upper surface of the substrate 3. Preferably, the upper surface of the substrate 3 is treated by an ozone treatment process or an oxygen plasma treatment process to form the oxygen atom diffusion barrier layer 2 on the upper surface of the substrate 3, and the oxygen plasma has a strong oxidizing property, so that the oxygen atom diffusion barrier layer 2 can be formed on the upper surface of the substrate 3 in a short time.
As an example, the oxygen atom diffusion barrier layer 2 may include a silicon oxide layer, and the thickness of the oxygen atom diffusion barrier layer 2 may include 1 nanometer (nm) to 10 nanometers, and preferably, in the present embodiment, the thickness of the oxygen atom diffusion barrier layer 2 is preferably 1 nanometer to 2 nanometers, such as 1 nanometer, 1.5 nanometers, or 2 nanometers.
In step 3), referring to fig. 3, the oxide film 1 is formed on the upper surface of the oxygen atom diffusion barrier layer 2.
As an example, the oxide thin film 1 may be formed on the upper surface of the oxygen atom diffusion barrier layer 2 by using a sputtering process, an evaporation process, a Chemical Vapor Deposition (CVD) process, an Atomic Layer Deposition (ALD) process, or the like.
As an example, the oxide thin film 1 may include any oxide layer that can be used as a functional layer such as a carrier transport layer or an insulating layer. For example, the oxide thin film 1 may include, but is not limited to, molybdenum oxide (MoO)3) A film.
In the method for manufacturing the structure having the oxide thin film in this embodiment, a very thin oxygen atom diffusion barrier layer 2 is formed on the upper surface of the substrate 3, and then the oxide thin film 1 is formed on the upper surface of the oxygen atom diffusion barrier layer 2, at this time, the oxide thin film 1 is isolated from the substrate 3 by the oxygen atom diffusion barrier layer 2, that is, the oxide thin film 1 is not in direct contact with the substrate 3, the substrate 3 loses the ability of extracting oxygen atoms from the oxide thin film 1 to form new silicon-oxygen bonds, since the oxygen atoms in the oxide thin film 1 are not extracted, the oxygen vacancy concentration in the oxide thin film 1 is not affected by the substrate 3, and the oxygen vacancies in the oxide thin film 1 can be precisely controlled by the manufacturing process to realize high work function, High visible light transmission, low conductivity and the like; taking the oxide film 1 as a molybdenum oxide film as an example, the Si substrate causes MoO3To MoOx(x < 3), part of Mo for maintaining electrical neutrality6+Reduce the price to Mo5+、Mo4+Result in MoO3The oxygen atom diffusion barrier layer 2 prevents changes in electrical properties, optical properties, and energy bands of the thin film, such as increased conductivity, increased absorption in the visible light band, and decreased work function, etc. In addition, because the thickness of the oxygen atom diffusion barrier layer 2 is within 2 nanometers and is thin, electrons can be normally transmitted in a tunneling mode, and the structure or the performance of a device cannot be influenced.
Example two
With continuing reference to fig. 3, the present invention further provides a structure having an oxide film, the structure having an oxide film comprising:
an oxide thin film 1;
an oxygen atom diffusion barrier layer 2, wherein the oxygen atom diffusion barrier layer 2 is positioned on the lower surface of the oxide film 1;
and the substrate 3 is positioned on the lower surface of the oxygen atom diffusion barrier layer 2.
As an example, the oxide thin film 1 may include any oxide layer that can be used as a functional layer such as a carrier transport layer or an insulating layer. For example, the oxide thin film 1 may include, but is not limited to, molybdenum oxide (MoO)3) A film.
By way of example, the substrate 3 may include, but is not limited to, a silicon substrate.
As an example, the oxygen atom diffusion barrier layer 2 may include a silicon oxide layer, and the thickness of the oxygen atom diffusion barrier layer 2 may include 1 nanometer (nm) to 10 nanometers, and preferably, in the present embodiment, the thickness of the oxygen atom diffusion barrier layer 2 is preferably 1 nanometer to 2 nanometers, such as 1 nanometer, 1.5 nanometers, or 2 nanometers.
In the structure having an oxide thin film in this embodiment, by providing the oxygen atom diffusion barrier layer 2 on the lower surface of the oxide thin film 1, the oxide thin film 1 is isolated from the substrate 3 via the oxygen atom diffusion barrier layer 2, that is, the oxide thin film 1 is not isolated from the substrateThe substrate 3 is in direct contact with the oxide film 1, the substrate 3 loses the capability of abstracting oxygen atoms from the oxide film 1 to form new silicon-oxygen bonds, the oxygen atoms in the oxide film 1 cannot be abstracted, the concentration of oxygen vacancies in the oxide film 1 cannot be influenced by the substrate 3, and the oxygen vacancies in the oxide film 1 can be accurately controlled by a preparation process to realize the properties of high work function, high visible light transmission, low conductivity and the like; taking the oxide film 1 as a molybdenum oxide film as an example, the Si substrate causes MoO3To MoOx(x < 3), part of Mo for maintaining electrical neutrality6+Reduce the price to Mo5+、Mo4+Result in MoO3The oxygen atom diffusion barrier layer 2 prevents changes in electrical properties, optical properties, and energy bands of the thin film, such as increased conductivity, increased absorption in the visible light band, and decreased work function, etc. In addition, because the thickness of the oxygen atom diffusion barrier layer 2 is within 2 nanometers and is thin, electrons can be normally transmitted in a tunneling mode, and the structure or the performance of a device cannot be influenced.
EXAMPLE III
Referring to fig. 4 to 9, the present invention further provides a method for preparing a structure having an oxide thin film, including the steps of:
1) preparing the oxide thin film;
2) and forming the oxygen atom diffusion barrier layer on the upper surface of the oxide film.
As an example, referring to fig. 4, the following steps are further included before the step 1) is executed: a substrate 3 is provided.
As an example, the substrate 3 may include, but is not limited to, a silicon (Si) substrate.
In step 1), referring to fig. 5, the oxide thin film 1 is prepared. Specifically, the oxide film 1 is prepared on the upper surface of the substrate 3.
As an example, the oxide thin film 1 may be formed on the upper surface of the oxygen atom diffusion barrier layer 2 by using a sputtering process, an evaporation process, a Chemical Vapor Deposition (CVD) process, an Atomic Layer Deposition (ALD) process, or the like.
As an example, the oxide thin film 1 may include any oxide layer that can be used as a functional layer such as a carrier transport layer or an insulating layer. For example, the oxide thin film 1 may include, but is not limited to, molybdenum oxide (MoO)3) A film.
In step 2), referring to fig. 6 to 8, the oxygen atom diffusion barrier layer 2 is formed on the upper surface of the oxide film 1.
In one example, step 2) may include the steps of:
2-1) treating the upper surface of the oxide thin film 1 to form an oxygen-rich layer 11 on the upper surface of the oxide thin film 1, as shown in fig. 6, wherein the proportion of oxygen atoms in the oxygen-rich layer 11 is greater than that in the oxide thin film 1;
2-2) forming a metal electrode 4 on the upper surface of the oxygen-rich layer 11, wherein the metal electrode 4 reacts with the oxygen-rich layer 11 to form a metal oxide layer between the metal electrode 4 and the oxide thin film 1 as the oxygen atom diffusion barrier layer 2, as shown in fig. 7.
As an example, in step 2-1), the upper surface of the oxide thin film 1 may be treated by an ozone treatment process to form the oxygen-rich layer 11 on the upper surface of the oxide thin film 1.
As an example, in step 2-2), the metal electrode 4 may be formed on the upper surface of the oxygen-rich layer 11 by using, but not limited to, a deposition process, and the metal electrode 4 may include, but is not limited to, an aluminum (Al) electrode. The enthalpy of formation (-1675.7kJ/mol) of aluminum oxide is much lower than the enthalpy of formation of oxide film 1 (e.g., the enthalpy of formation-745.1 kJ/mol of MoO 3) and even lower than the enthalpy of formation of silicon oxide, and therefore, a metal electrode such as aluminum is more likely to abstract oxygen atoms in oxide film 1 than a silicon substrate. In this embodiment, since the oxygen atom ratio in the oxygen-rich layer 11 is greater than the oxygen atom ratio in the oxide thin film 1, the excess oxygen atoms in the oxygen-rich layer 11 react with the metal electrode 4 in contact therewith, and a dense metal oxide layer (e.g., an aluminum oxide layer) with an extremely thin thickness is formed at the interface between the two. The oxygen atoms in the metal oxide layer used for forming the oxygen atom diffusion barrier layer 2 are oxygen atoms from the oxygen-rich layer 11, so that the metal electrode 4 is prevented from abstracting oxygen atoms from the oxide thin film 1, the oxygen vacancy concentration in the oxide thin film 1 is ensured not to be influenced by the metal electrode 4, and the oxygen vacancies in the oxide thin film 1 can be precisely controlled by a preparation process so as to realize the properties of high work function, high visible light transmission, low conductivity and the like.
In another example, referring to fig. 8, a layer of the oxygen atom diffusion barrier layer 2 may be directly formed on the upper surface of the oxide thin film 1 by using, but not limited to, a sputtering process, an evaporation process, a chemical vapor deposition process, or an atomic layer deposition process.
As an example, referring to fig. 9, after forming the oxygen atom diffusion barrier layer 2 on the upper surface of the oxide thin film 1, the method further includes the following steps: and forming a metal electrode 4 on the upper surface of the oxygen atom diffusion barrier layer 2. Specifically, the metal electrode 4 may include, but is not limited to, an aluminum electrode.
In this example, the enthalpy of formation of the oxygen atom diffusion barrier layer 2 directly formed on the upper surface of the oxide thin film 1 is smaller than the enthalpy of formation of the metal oxide of the metal electrode 4, that is, the enthalpy of formation of the metal oxide of the metal electrode 4 is not smaller than the enthalpy of formation of the oxygen atom diffusion barrier layer 2, so that the metal electrode 4 cannot extract oxygen atoms from the oxide thin film 1, thereby ensuring that the oxygen vacancy concentration in the oxide thin film 1 is not affected by the metal electrode 4, and the oxygen vacancies in the oxide thin film 1 can be precisely controlled by the preparation process to achieve the properties of high work function, high visible light transmission, low electrical conductivity and the like.
As an example, the atomic oxygen diffusion barrier layer 2 includes at least one of an aluminum oxide, a silicon oxide layer, a hafnium oxide layer, a vanadium oxide layer, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, an indium oxide layer, an aluminum nitride layer, and a silicon nitride layer.
As an example, the thickness of the oxygen atom diffusion barrier layer 2 may include 1 nanometer (nm) to 10 nanometers, and preferably, in the present embodiment, the thickness of the oxygen atom diffusion barrier layer 2 is preferably 1 nanometer to 2 nanometers, such as 1 nanometer, 1.5 nanometers, or 2 nanometers. Because the thickness of the oxygen atom diffusion barrier layer 2 is within 2 nanometers and is thin, electrons can be normally transmitted in a tunneling mode, and the structure or the performance of a device cannot be influenced.
Example four
With continuing reference to fig. 7 and 9, the present invention further provides a structure with an oxide film, comprising:
an oxide thin film 1;
an oxygen atom diffusion barrier layer 2, wherein the oxygen atom diffusion barrier layer 2 is positioned on the upper surface of the oxide film 1;
and the metal electrode 4 is positioned on the upper surface of the oxygen atom diffusion barrier layer 2, and the enthalpy of formation of the metal oxide of the metal electrode 4 is less than that of the oxygen atom diffusion barrier layer 2. The formation enthalpy of the metal oxide of the metal electrode 4 is not less than the formation enthalpy of the oxygen atom diffusion barrier layer 2, so that the metal electrode 4 cannot take oxygen atoms from the oxide film 1, the oxygen vacancy concentration in the oxide film 1 is not influenced by the metal electrode 4, and the oxygen vacancies in the oxide film 1 can be accurately controlled through a preparation process, so that the properties of high work function, high visible light transmission, low conductivity and the like of the oxide film are realized.
As an example, the oxide thin film 1 may include any oxide layer that can be used as a functional layer such as a carrier transport layer or an insulating layer. For example, the oxide thin film 1 may include, but is not limited to, molybdenum oxide (MoO)3) A film.
By way of example, the metal electrode 4 may include, but is not limited to, an aluminum electrode.
As an example, the atomic oxygen diffusion barrier layer 2 may be obtained by reacting the metal electrode 4 with an oxygen-rich layer, and the atomic oxygen diffusion barrier layer 2 may also be directly formed on the upper surface of the oxide thin film 1 by using, but not limited to, a sputtering process, an evaporation process, a chemical vapor deposition process, or an atomic layer deposition process.
As an example, the atomic oxygen diffusion barrier layer 2 includes at least one of an aluminum oxide, a silicon oxide layer, a hafnium oxide layer, a vanadium oxide layer, a molybdenum oxide layer, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, an indium oxide layer, an aluminum nitride layer, and a silicon nitride layer.
As an example, the thickness of the oxygen atom diffusion barrier layer 2 may include 1 nanometer (nm) to 10 nanometers, and preferably, in the present embodiment, the thickness of the oxygen atom diffusion barrier layer 2 is preferably 1 nanometer to 2 nanometers, such as 1 nanometer, 1.5 nanometers, or 2 nanometers. Because the thickness of the oxygen atom diffusion barrier layer 2 is within 2 nanometers and is thin, electrons can be normally transmitted in a tunneling mode, and the structure or the performance of a device cannot be influenced.
As an example, the structure with the oxide thin film further comprises a substrate 3, wherein the substrate 3 is positioned on the lower surface of the oxide thin film 1
By way of example, the substrate 3 may include, but is not limited to, a silicon substrate.
EXAMPLE five
Referring to fig. 10 to 16, the present invention further provides a method for fabricating a structure having an oxide thin film, including the steps of:
1) providing a substrate;
2) forming a first oxygen atom diffusion barrier layer on the upper surface of the substrate;
3) forming the oxide film on the upper surface of the first oxygen atom diffusion barrier layer;
4) and forming a second oxygen atom diffusion barrier layer on the upper surface of the oxide film.
In step 1), referring to fig. 10, a substrate 3 is provided.
As an example, the substrate 3 may include, but is not limited to, a silicon (Si) substrate.
In step 2), referring to fig. 11, a first oxygen atom diffusion barrier layer 21 is formed on the upper surface of the substrate 3.
As an example, the upper surface of the substrate 3 may be treated using a nitric acid oxidation treatment process, an ultraviolet light induced oxidation process, an ozone-containing water wet oxidation process, a dry oxidation process, an ozone treatment process, or an oxygen plasma treatment process to form the first oxygen atom diffusion barrier layer 21 on the upper surface of the substrate 3. Preferably, the upper surface of the substrate 3 is treated by an ozone treatment process or an oxygen plasma treatment process to form the first oxygen atom diffusion barrier layer 21 on the upper surface of the substrate 3, and oxygen plasma has a strong oxidizing property, so that the first oxygen atom diffusion barrier layer 21 can be formed on the upper surface of the substrate 3 in a short time.
As an example, the first oxygen atom diffusion barrier layer 21 may include a silicon oxide layer, and the thickness of the first oxygen atom diffusion barrier layer 21 may include 1 nanometer (nm) to 10 nanometers, and preferably, in the present embodiment, the thickness of the first oxygen atom diffusion barrier layer 21 is preferably 1 nanometer to 2 nanometers, such as 1 nanometer, 1.5 nanometers, or 2 nanometers.
In step 3), referring to fig. 12, the oxide film 1 is formed on the upper surface of the first oxygen atom diffusion barrier layer 21.
As an example, the oxide thin film 1 may be formed on the upper surface of the first oxygen atom diffusion barrier layer 21 using a sputtering process, an evaporation process, a Chemical Vapor Deposition (CVD) process, an Atomic Layer Deposition (ALD) process, or the like.
As an example, the oxide thin film 1 may include any oxide layer that can be used as a functional layer such as a carrier transport layer or an insulating layer. For example, the oxide thin film 1 may include, but is not limited to, molybdenum oxide (MoO)3) A film.
Forming a very thin layer of said first oxygen atom diffusion barrier layer 21 on the upper surface of said substrate 3, and then forming said oxide thin film 1 on the upper surface of said first oxygen atom diffusion barrier layer 21, in which case said oxide is formedThe thin film 1 is isolated from the substrate 3 through the first oxygen atom diffusion barrier layer 21, namely the oxide thin film 1 is not in direct contact with the substrate 3, the substrate 3 loses the capability of abstracting oxygen atoms from the oxide thin film 1 to form new silicon-oxygen bonds, the oxygen vacancy concentration in the oxide thin film 1 is not influenced by the substrate 3 because the oxygen atoms in the oxide thin film 1 are not abstracted, and the oxygen vacancies in the oxide thin film 1 can be precisely controlled through a preparation process to realize the properties of high work function, high visible light transmission, low electrical conductivity and the like; meanwhile, taking the oxide film 1 as a molybdenum oxide film as an example, the Si substrate causes MoO3To MoOx(x < 3), part of Mo for maintaining electrical neutrality6+Reduce the price to Mo5+、Mo4+Result in MoO3The electrical properties, optical properties and energy bands of the film are changed, such as increased conductivity, increased absorption in the visible light band, decreased work function, etc., and the first oxygen atom diffusion barrier layer 21 on the lower surface of the oxide film 1 is a silicon oxide layer, which can be prevented. In addition, since the thickness of the first oxygen atom diffusion barrier layer 21 is within 2 nm and is thin, electrons can be normally transported in a tunneling mode, and the structure or the performance of the device cannot be affected.
In step 4), referring to fig. 13 to 16, a second oxygen atom diffusion barrier layer 22 is formed on the upper surface of the oxide film 1.
In one example, step 4) may include the steps of:
4-1) treating the upper surface of the oxide thin film 1 to form an oxygen-rich layer 11 on the upper surface of the oxide thin film 1, as shown in fig. 13, wherein the proportion of oxygen atoms in the oxygen-rich layer 11 is greater than that in the oxide thin film 1;
4-2) forming a metal electrode 4 on the upper surface of the oxygen-rich layer 11, wherein the metal electrode 4 reacts with the oxygen-rich layer 11 to form a metal oxide layer between the metal electrode 4 and the oxide thin film 1 as the second oxygen atom diffusion barrier layer 22, as shown in fig. 14.
As an example, in step 4-1), the upper surface of the oxide thin film 1 may be treated by an ozone treatment process to form the oxygen-rich layer 11 on the upper surface of the oxide thin film 1.
As an example, in step 4-2), the metal electrode 4 may be formed on the upper surface of the oxygen-rich layer 11 by using, but not limited to, a deposition process, and the metal electrode 4 may include, but is not limited to, an aluminum (Al) electrode. The enthalpy of formation (-1675.7kJ/mol) of aluminum oxide is much lower than the enthalpy of formation of oxide film 1 (e.g., the enthalpy of formation-745.1 kJ/mol of MoO 3) and even lower than the enthalpy of formation of silicon oxide, and therefore, a metal electrode such as aluminum is more likely to abstract oxygen atoms in oxide film 1 than a silicon substrate. In this embodiment, since the oxygen atom ratio in the oxygen-rich layer 11 is greater than the oxygen atom ratio in the oxide thin film 1, the excess oxygen atoms in the oxygen-rich layer 11 react with the metal electrode 4 in contact therewith, and a dense metal oxide layer (e.g., an aluminum oxide layer) with an extremely thin thickness is formed at the interface between the two. The oxygen atoms in the metal oxide layer used for forming the second oxygen atom diffusion barrier layer 22 are oxygen atoms from the oxygen-rich layer 11, so that the metal electrode 4 is prevented from abstracting oxygen atoms from the oxide thin film 1, and the oxygen vacancy concentration in the oxide thin film 1 is ensured not to be influenced by the metal electrode 4, and the oxygen vacancies in the oxide thin film 1 can be precisely controlled by the preparation process, so as to realize the properties of high work function, high visible light transmission, low conductivity and the like.
In another example, referring to fig. 15, a layer of the second atomic oxygen diffusion barrier layer 22 may be formed directly on the upper surface of the oxide thin film 1 by using, but not limited to, a sputtering process, an evaporation process, a chemical vapor deposition process, or an atomic layer deposition process.
As an example, referring to fig. 16, after forming the second oxygen atom diffusion barrier layer 22 on the upper surface of the oxide thin film 1, the following steps are further included: and forming a metal electrode 4 on the upper surface of the second oxygen atom diffusion barrier layer 22. Specifically, the metal electrode 4 may include, but is not limited to, an aluminum electrode.
In this example, the enthalpy of formation of the second oxygen atom diffusion barrier layer 22 directly formed on the upper surface of the oxide thin film 1 is smaller than the enthalpy of formation of the metal oxide of the metal electrode 4, that is, the enthalpy of formation of the metal oxide of the metal electrode 4 is not smaller than the enthalpy of formation of the second oxygen atom diffusion barrier layer 22, so that the metal electrode 4 cannot abstract oxygen atoms from the oxide thin film 1, thereby ensuring that the oxygen vacancy concentration in the oxide thin film 1 is not affected by the metal electrode 4, and the oxygen vacancies in the oxide thin film 1 can be precisely controlled by the preparation process to achieve the properties of high work function, high visible light transmission, low electrical conductivity, and the like.
As an example, the second atomic oxide diffusion barrier layer 22 includes at least one of an aluminum oxide, a silicon oxide layer, a hafnium oxide layer, a vanadium oxide layer, a molybdenum oxide layer, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, an indium oxide layer, an aluminum nitride layer, and a silicon nitride layer.
As an example, the thickness of the second oxygen atom diffusion barrier layer 22 may include 1 nanometer (nm) to 10 nanometers, and preferably, in the present embodiment, the thickness of the second oxygen atom diffusion barrier layer 22 is preferably 1 nanometer to 2 nanometers, such as 1 nanometer, 1.5 nanometers or 2 nanometers. Since the thickness of the second oxygen atom diffusion barrier layer 22 is within 2 nm and is relatively thin, electrons can be normally transmitted in a tunneling manner, and the structure or the performance of the device cannot be affected.
EXAMPLE six
With continuing reference to fig. 16, the present invention further provides a structure having an oxide film, comprising:
a substrate 3;
a first oxygen atom diffusion barrier layer 21, said first oxygen atom diffusion barrier layer 21 being located on an upper surface of said substrate 3;
an oxide thin film 1, the oxide thin film 1 being located on an upper surface of the first oxygen atom diffusion barrier layer 21;
a second oxygen atom diffusion barrier layer 22, wherein the second oxygen atom diffusion barrier layer 22 is positioned on the upper surface of the oxide film 1;
and the metal electrode 4 is positioned on the upper surface of the second oxygen atom barrier layer 22.
As an example, the substrate 3 may include, but is not limited to, a silicon (Si) substrate.
As an example, the first oxygen atom diffusion barrier layer 21 may include a silicon oxide layer, and the thickness of the first oxygen atom diffusion barrier layer 21 may include 1 nanometer (nm) to 10 nanometers, and preferably, in the present embodiment, the thickness of the first oxygen atom diffusion barrier layer 21 is preferably 1 nanometer to 2 nanometers, such as 1 nanometer, 1.5 nanometers, or 2 nanometers.
As an example, the oxide thin film 1 may include any oxide layer that can be used as a functional layer such as a carrier transport layer or an insulating layer. For example, the oxide thin film 1 may include, but is not limited to, molybdenum oxide (MoO)3) A film.
Forming a very thin first oxygen atom diffusion barrier layer 21 on the upper surface of the substrate 3, wherein the oxide thin film 1 is isolated from the substrate 3 by the first oxygen atom diffusion barrier layer 21, i.e. the oxide thin film 1 is not in direct contact with the substrate 3, the substrate 3 loses the ability to abstract oxygen atoms from the oxide thin film 1 to form new silicon-oxygen bonds, the oxygen vacancy concentration in the oxide thin film 1 is not affected by the substrate 3 because the oxygen atoms in the oxide thin film 1 are not abstracted, and the oxygen vacancies in the oxide thin film 1 can be precisely controlled by the preparation process to realize the properties of high work function, high visible light transmission, low electrical conductivity and the like; meanwhile, taking the oxide film 1 as a molybdenum oxide film as an example, the Si substrate causes MoO3To MoOx(x < 3), part of Mo for maintaining electrical neutrality6+Reduce the price to Mo5+、Mo4+Result in MoO3The electrical properties, optical properties and energy bands of the thin film are changed, such as an increase in conductivity, an increase in absorption in a visible light band, a decrease in work function, etc., the first oxygen atoms on the lower surface of the oxide thin film 1 are diffusedThe barrier layer 21 is a silicon oxide layer to avoid this phenomenon. In addition, since the thickness of the first oxygen atom diffusion barrier layer 21 is within 2 nm and is thin, electrons can be normally transported in a tunneling mode, and the structure or the performance of the device cannot be affected.
As an example, the second atomic diffusion barrier layer 22 may be obtained by reacting the metal electrode 4 with an oxygen-rich layer, and the second atomic diffusion barrier layer 22 may also be directly formed on the upper surface of the oxide thin film 1 by using, but not limited to, a sputtering process, an evaporation process, a chemical vapor deposition process, or an atomic layer deposition process.
Specifically, the metal electrode 4 may include, but is not limited to, an aluminum electrode.
In this example, the enthalpy of formation of the second oxygen atom diffusion barrier layer 22 directly formed on the upper surface of the oxide thin film 1 is smaller than the enthalpy of formation of the metal oxide of the metal electrode 4, that is, the enthalpy of formation of the metal oxide of the metal electrode 4 is not smaller than the enthalpy of formation of the second oxygen atom diffusion barrier layer 22, so that the metal electrode 4 cannot abstract oxygen atoms from the oxide thin film 1, thereby ensuring that the oxygen vacancy concentration in the oxide thin film 1 is not affected by the metal electrode 4, and the oxygen vacancies in the oxide thin film 1 can be precisely controlled by the preparation process to achieve the properties of high work function, high visible light transmission, low electrical conductivity, and the like.
As an example, the second atomic oxide diffusion barrier layer 22 includes at least one of an aluminum oxide, a silicon oxide layer, a hafnium oxide layer, a vanadium oxide layer, a molybdenum oxide layer, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, an indium oxide layer, an aluminum nitride layer, and a silicon nitride layer.
As an example, the thickness of the second oxygen atom diffusion barrier layer 22 may include 1 nanometer (nm) to 10 nanometers, and preferably, in the present embodiment, the thickness of the second oxygen atom diffusion barrier layer 22 is preferably 1 nanometer to 2 nanometers, such as 1 nanometer, 1.5 nanometers or 2 nanometers. Since the thickness of the second oxygen atom diffusion barrier layer 22 is within 2 nm and is relatively thin, electrons can be normally transmitted in a tunneling manner, and the structure or the performance of the device cannot be affected.
In summary, the present invention provides a structure with an oxide thin film and a method for preparing the same, wherein the method for preparing the structure with the oxide thin film comprises the following steps: preparing an oxide film, wherein an oxygen atom diffusion barrier layer is formed on at least one surface of the oxide film. According to the invention, the oxygen atom diffusion barrier layer is formed on at least one surface of the oxide film, so that the oxide film can be prevented from being directly contacted with the substrate or the metal electrode, oxygen atoms in the oxide film can be prevented from being captured by the substrate or the metal electrode, and properties such as conductivity, work function, refractive index and the like of the oxide film can be prevented from being changed, so that the function of the device can be ensured, and the device can be prevented from failing.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (7)
1. A method for preparing a structure having an oxide thin film, comprising the steps of:
providing a substrate, and preparing an oxide film on the substrate;
treating the upper surface of the oxide film by adopting an ozone treatment process so as to form an oxygen-rich layer on the upper surface of the oxide film, wherein the proportion of oxygen atoms in the oxygen-rich layer is greater than that of the oxygen atoms in the oxide film; forming a metal electrode on the upper surface of the oxygen-enriched layer, wherein the metal electrode reacts with the oxygen-enriched layer to form a metal oxide layer serving as an oxygen atom diffusion barrier layer between the metal electrode and the oxide film, and the thickness of the oxygen atom diffusion barrier layer is 1-2 nanometers;
or the like, or, alternatively,
providing a substrate; treating the upper surface of the substrate by adopting an ozone process so as to form a first oxygen atom diffusion barrier layer on the upper surface of the substrate; the substrate comprises a silicon substrate, the first oxygen atom diffusion barrier layer comprises a silicon oxide layer, and the thickness of the first oxygen atom diffusion barrier layer is 1-2 nanometers; forming the oxide film on the upper surface of the first oxygen atom diffusion barrier layer; forming a second oxygen atom diffusion barrier layer on the upper surface of the oxide film; forming a second oxygen atom diffusion barrier layer on the upper surface of the oxide film comprises the following steps: processing the upper surface of the oxide film to form an oxygen-rich layer on the upper surface of the oxide film, wherein the proportion of oxygen atoms in the oxygen-rich layer is greater than that of the oxygen atoms in the oxide film; and forming a metal electrode on the upper surface of the oxygen-enriched layer, wherein the metal electrode reacts with the oxygen-enriched layer to form a metal oxide layer between the metal electrode and the oxide film to serve as the second oxygen atom diffusion barrier layer.
2. The method according to claim 1, further comprising the step of, after forming the second oxygen atom diffusion barrier layer on the upper surface of the oxide thin film: and forming a metal electrode on the upper surface of the second oxygen atom diffusion impervious layer, wherein the formation enthalpy of the metal oxide of the metal electrode is not less than the formation enthalpy of the second oxygen atom diffusion impervious layer.
3. The method of making a structure having an oxide thin film according to claim 1, wherein the second oxygen atom diffusion barrier layer comprises at least one of an aluminum oxide, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, and an indium oxide layer.
4. The method for producing a structure having an oxide thin film according to any one of claims 1 to 3, wherein the thickness of the second oxygen atom diffusion barrier layer includes 1 nm to 10 nm.
5. A structure having an oxide thin film, comprising:
an oxide film, at least one surface of which is formed with an oxygen atom diffusion barrier layer;
the substrate is positioned on the lower surface of the oxide film, and the oxygen atom diffusion barrier layer is positioned on the upper surface of the oxide film; the substrate comprises a silicon substrate, and the forming method of the oxygen atom diffusion barrier layer comprises the following steps: treating the upper surface of the oxide film by adopting an ozone treatment process so as to form an oxygen-rich layer on the upper surface of the oxide film, wherein the proportion of oxygen atoms in the oxygen-rich layer is greater than that of the oxygen atoms in the oxide film; forming a metal electrode on the upper surface of the oxygen-enriched layer, wherein the metal electrode reacts with the oxygen-enriched layer to form a metal oxide layer between the metal electrode and the oxide film to serve as the oxygen atom diffusion barrier layer;
or the like, or, alternatively,
the oxygen atom diffusion barrier layer comprises a first oxygen atom diffusion barrier layer and a second oxygen atom diffusion barrier layer; the structure having an oxide thin film further includes: the first oxygen atom diffusion barrier layer is positioned on the upper surface of the substrate; the oxide film is positioned on the upper surface of the first oxygen atom diffusion impervious layer; the second oxygen atom diffusion impervious layer is positioned on the upper surface of the oxide film; the metal electrode is positioned on the upper surface of the second oxygen atom diffusion impervious layer; the substrate comprises a silicon substrate, the first oxygen atom diffusion barrier layer comprises a silicon oxide layer, the thickness of the first oxygen atom diffusion barrier layer comprises 1-2 nanometers, and the forming method of the second oxygen atom diffusion barrier layer comprises the following steps: processing the upper surface of the oxide film to form an oxygen-rich layer on the upper surface of the oxide film, wherein the proportion of oxygen atoms in the oxygen-rich layer is greater than that of the oxygen atoms in the oxide film; and forming a metal electrode on the upper surface of the oxygen-enriched layer, wherein the metal electrode reacts with the oxygen-enriched layer to form a metal oxide layer between the metal electrode and the oxide film to serve as the second oxygen atom diffusion barrier layer.
6. The structure having an oxide thin film according to claim 5, wherein the second oxygen atom diffusion barrier layer comprises at least one of an aluminum oxide, a tungsten oxide layer, a zinc oxide layer, a copper oxide layer, a silver oxide layer, a tin oxide layer, and an indium oxide layer.
7. The structure having an oxide thin film according to claim 5 or 6, wherein a thickness of the second oxygen atom diffusion barrier layer comprises 1 nm to 10 nm.
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