CN109950134A - Structure and preparation method thereof with sull - Google Patents
Structure and preparation method thereof with sull Download PDFInfo
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- CN109950134A CN109950134A CN201910208949.3A CN201910208949A CN109950134A CN 109950134 A CN109950134 A CN 109950134A CN 201910208949 A CN201910208949 A CN 201910208949A CN 109950134 A CN109950134 A CN 109950134A
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- sull
- oxygen atom
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- diffusion barrier
- barrier layer
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Abstract
The present invention provides a kind of structure and preparation method thereof with sull, includes the following steps: to prepare sull, an at least surface for sull is formed with oxygen atom diffusion barrier layer.The present invention is by forming oxygen atom diffusion barrier layer on an at least surface for sull, it can directly be contacted to avoid sull with substrate or metal electrode, guarantee that the oxygen atom in sull will not be captured by substrate or metal electrode, ensure that the properties such as the conductivity, work function and refractive index of sull will not change, so that it is guaranteed that the function of device, it is ensured that device will not fail.
Description
Technical field
The invention belongs to semiconductor material and device preparation technical field, more particularly to a kind of with sull
Structure and preparation method thereof.
Background technique
Sull has extremely wide in the semiconductor device as functional layers such as carrier blocking layers, insulating layers
Using sull can pass through sputtering, chemical vapor deposition (Chemical Vapor Deposition, CVD), atom
The preparation of the technologies such as layer deposition (Atomic Layer Deposition, ALD) is on the surface substrate (such as Si).The sull
Interface quality extreme influence between the substrate the performance of device.
When the oxide film growth on a si substrate when, according to Gibbs Free Energy equation:
Δ G=Δ H-T Δ S
When the enthalpy of formation for growing the sull is greater than SiO2(Δ H < 0, Δ G < 0), Si when (- 859.4kJ/mol)
Spontaneous O (oxygen) atom captured in the sull of meeting generates one in the interface of the oxide film and the substrate
Layer nanoscale SiOx (0 < x < 2) layer, so that generating Lacking oxygen in the sull.
Equally, when forming metal electrode on the sull, when the enthalpy of formation of the sull is greater than institute
When stating the enthalpy of formation of the metal oxide of metal electrode, the metal electrode spontaneous can seize the original of the O in the sull
Son generates one layer of nanoscale metal oxide layer in the interface of the sull and the metal electrode, so that institute
It states and generates Lacking oxygen in sull.
These Lacking oxygens will cause the variation of described sull property such as conductivity, work function, refractive index etc., thus
Cause device that certain functions are not achieved, that is, leads to the performance degradation of device, the serious failure that can cause entire device.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of knots with sull
Structure and preparation method thereof, existing appearance when sull and substrate or metal electrode directly contact in the prior art for solution
It easily is formed in the interior thereof Lacking oxygen, so that the variation of sull property such as conductivity, work function, refractive index etc. is caused, into
And cause device that certain functions are not achieved, that is, lead to the performance degradation of device, the serious failure that can cause entire device is asked
Topic.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation of structure with sull
The preparation method of method, the structure with sull includes the following steps:
Sull is prepared, an at least surface for the sull is formed with oxygen atom diffusion barrier layer.
Optionally, the preparation method of the structure with the sull includes the following steps:
Substrate is provided；
The oxygen atom diffusion barrier layer is formed in the upper surface of the substrate；
The sull is formed in the upper surface of the oxygen atom diffusion barrier layer.
Optionally, using nitric acid oxidation treatment process, UV light-induced oxidation technology, wet process oxidation technology containing Ozone Water,
Dry oxidation technique, ozone treatment technique or oxygen plasma treatment technique handle the upper surface of the substrate, in
The upper surface of the substrate forms the oxygen atom diffusion barrier layer.
Optionally, the substrate includes silicon substrate, and the oxygen atom diffusion barrier layer includes silicon oxide layer.
Optionally, the preparation method of the structure with the sull includes the following steps:
Prepare the sull；
The oxygen atom diffusion barrier layer is formed in the upper surface of the sull.
Optionally, the upper surface of Yu Suoshu sull forms the oxygen atom diffusion barrier layer and includes the following steps:
The upper surface of the sull is handled, is formed with the upper surface in the sull oxygen-enriched
Layer, the accounting of oxygen atom is greater than the accounting of oxygen atom in the sull in the oxygen-rich layer；
Metal electrode is formed in the upper surface of the oxygen-rich layer, the metal electrode is reacted with the oxygen-rich layer in described
Metal oxide layer is formed between metal electrode and the sull as the oxygen atom diffusion barrier layer.
Optionally, it is handled using upper surface of the ozone treatment technique to the sull, in the oxidation
The upper surface of object film forms the oxygen-rich layer.
It optionally, further include walking as follows after the upper surface of Yu Suoshu sull forms the oxygen atom diffusion barrier layer
Rapid: the upper surface of Yu Suoshu oxygen atom diffusion barrier layer forms metal electrode, the generation of the metal oxide of the metal electrode
Enthalpy is not less than the enthalpy of formation of the oxygen atom diffusion barrier layer.
Optionally, the oxygen atom diffusion barrier layer includes aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer, oxidation
Molybdenum layer, tungsten oxide layer, zinc oxide film, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer and silicon nitride layer
At least one of.
Optionally, substrate is provided, the sull is prepared on Yu Suoshu substrate.
Optionally, the thickness of the oxygen atom diffusion barrier layer includes 1 nanometer~10 nanometers.
Optionally, the preparation method of the structure with the sull includes the following steps:
Substrate is provided；
The first oxygen atom diffusion barrier layer is formed in the upper surface of the substrate；
The sull is formed in the upper surface of the first oxygen atom diffusion barrier layer；
The second oxygen atom diffusion barrier layer is formed in the upper surface of the sull.
Optionally, using nitric acid oxidation treatment process, UV light-induced oxidation technology, wet process oxidation technology containing Ozone Water,
Dry oxidation technique, ozone treatment technique or oxygen plasma treatment technique handle the upper surface of the substrate, in
The upper surface of the substrate forms the first oxygen atom diffusion barrier layer.
Optionally, the substrate includes silicon substrate, and the first oxygen atom diffusion barrier layer includes silicon oxide layer.
Optionally, the upper surface of Yu Suoshu sull forms the second oxygen atom diffusion barrier layer and includes the following steps:
The upper surface of the sull is handled, is formed with the upper surface in the sull oxygen-enriched
Layer, the accounting of oxygen atom is greater than the accounting of oxygen atom in the sull in the oxygen-rich layer；
Metal electrode is formed in the upper surface of the oxygen-rich layer, the metal electrode is reacted with the oxygen-rich layer in described
Metal oxide layer is formed between metal electrode and the sull as the second oxygen atom diffusion barrier layer.
Optionally, it is handled using upper surface of the ozone treatment technique to the sull, in the oxidation
The upper surface of object film forms the oxygen-rich layer.
Optionally, the upper surface of Yu Suoshu sull formed after the second oxygen atom diffusion barrier layer further include as
Lower step: the upper surface of Yu Suoshu the second oxygen atom diffusion barrier layer forms metal electrode, the metal oxidation of the metal electrode
The enthalpy of formation of object is not less than the enthalpy of formation of the second oxygen atom diffusion barrier layer.
Optionally, the second oxygen atom diffusion barrier layer include aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer,
Molybdenum oxide layer, tungsten oxide layer, zinc oxide film, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer and nitridation
At least one of silicon layer.
Optionally, the thickness of the first oxygen atom diffusion barrier layer includes 1 nanometer~10 nanometers, second oxygen atom
The thickness of diffusion barrier layer includes 1 nanometer~10 nanometers.
The present invention also provides a kind of structure with sull, the structure with sull includes:
An at least surface for sull, the sull is formed with oxygen atom diffusion barrier layer.
Optionally, the structure with sull further include: substrate, the substrate are located at oxygen atom diffusion
The lower surface on barrier layer, the oxygen atom diffusion barrier layer are located at the lower surface of the sull.
Optionally, the substrate includes silicon substrate, and the oxygen atom diffusion barrier layer includes silicon oxide layer.
Optionally, the structure with sull further includes metal electrode, oxygen atom diffusion barrier layer position
In the upper surface of the sull, the metal electrode is located at the upper surface of the oxygen atom diffusion barrier layer, the gold
The enthalpy of formation for belonging to the metal oxide of electrode is not less than the enthalpy of formation of the oxygen atom diffusion barrier layer.
Optionally, the oxygen atom diffusion barrier layer includes aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer, oxidation
Molybdenum layer, tungsten oxide layer, zinc oxide film, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer and silicon nitride layer
At least one of.
Optionally, the structure with sull further includes substrate, and the substrate is located at the sull
Lower surface.
Optionally, the thickness of the oxygen atom diffusion barrier layer includes 1 nanometer~10 nanometers.
Optionally, the oxygen atom diffusion barrier layer includes the first oxygen atom barrier layer and the second oxygen atom barrier layer；Institute
State the structure with sull further include:
Substrate, first oxygen atom barrier layer are located at the upper surface of the substrate；The sull is located at described
The upper surface on the first oxygen atom barrier layer；Second oxygen atom barrier layer is located at the upper surface of the sull；
Metal electrode, positioned at the upper surface on second oxygen atom barrier layer.
Optionally, the substrate includes silicon substrate, and the first oxygen atom diffusion barrier layer includes silicon oxide layer, and described
Two oxygen atom diffusion barrier layers include aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer, molybdenum oxide layer, tungsten oxide layer, oxygen
Change at least one of zinc layers, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer and silicon nitride layer.
Optionally, the thickness of the first oxygen atom diffusion barrier layer includes 1 nanometer~10 nanometers, second oxygen atom
The thickness of diffusion barrier layer includes 1 nanometer~10 nanometers.
As described above, the structure and preparation method thereof with sull of the invention, has the advantages that
The present invention, can be to avoid oxide by forming oxygen atom diffusion barrier layer on an at least surface for sull
Film is directly contacted with substrate or metal electrode, guarantees that the oxygen atom in sull will not be taken by force by substrate or metal electrode
It takes, it is ensured that the properties such as conductivity, work function and refractive index of sull will not change, so that it is guaranteed that the function of device
It can, it is ensured that device will not fail.
Detailed description of the invention
Fig. 1 to Fig. 3 is shown as in the preparation method of the structure with sull provided in the embodiment of the present invention one
The cross section structure schematic diagram of each step resulting structures.
Fig. 4 to Fig. 9 is shown as in the preparation method of the structure with sull provided in the embodiment of the present invention three
The cross section structure schematic diagram of each step resulting structures.
Figure 10 to Figure 16 is shown as the preparation method of the structure with sull provided in the embodiment of the present invention five
In each step resulting structures cross section structure schematic diagram.
Component label instructions
1 sull
11 oxygen-rich layers
2 oxygen atom diffusion barrier layers
21 first oxygen atom diffusion barrier layers
22 second oxygen atom diffusion barrier layers
3 substrates
4 metal electrodes
Specific embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed by book is understood other advantages and efficacy of the present invention easily.
Fig. 1 is please referred to Figure 12.It should be clear that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., are only used
To cooperate the revealed content of specification, so that those skilled in the art understands and reads, being not intended to limit the invention can
The qualifications of implementation, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influencing the effect of present invention can be generated and the purpose that can reach, it should all still fall in disclosed skill
Art content obtains in the range of capable of covering.Meanwhile in this specification it is cited as "upper", "lower", "left", "right", " centre " and
The term of " one " etc. is merely convenient to being illustrated for narration, rather than to limit the scope of the invention, relativeness
It is altered or modified, under the content of no substantial changes in technology, when being also considered as the enforceable scope of the present invention.
The present invention provides a kind of preparation method of structure with sull, the structure with sull
Preparation method include the following steps: to prepare sull, an at least surface for the sull is formed with oxygen atom
Diffusion barrier layer.Having for the sull of the oxygen atom diffusion barrier layer is formed with including an at least surface to aoxidize
The method and specific structure of the structure of object film can there are many kinds of, be described in detail below with specific embodiment.
Embodiment one
It please refers to Fig.1 to Fig.3, the present invention provides a kind of preparation method of structure with sull, described to have
The preparation method of the structure of sull includes the following steps:
1) substrate is provided；
2) upper surface of Yu Suoshu substrate forms the oxygen atom diffusion barrier layer；
3) upper surface of Yu Suoshu oxygen atom diffusion barrier layer forms the sull.
In step 1), referring to Fig. 1, providing substrate 3.
As an example, the substrate 3 may include but be not limited only to silicon (Si) substrate.
In step 2), referring to Fig. 2, forming the oxygen atom diffusion barrier layer 2 in the upper surface of the substrate 3.
As an example, nitric acid oxidation treatment process, UV light-induced oxidation technology, wet oxidation containing Ozone Water can be used
Technique, dry oxidation technique, ozone treatment technique or oxygen plasma treatment technique to the upper surface of the substrate 3 at
Reason, forms the oxygen atom diffusion barrier layer 2 with the upper surface in the substrate 3.Preferably, using ozone treatment technique or oxygen
Plasma treatment process, which handles the upper surface of the substrate 3, forms the oxygen atom with the upper surface in the substrate 3
Diffusion barrier layer 2, oxygen plasma have stronger oxidisability, can be in a relatively short period of time in the upper surface of the substrate 3
Form the oxygen atom diffusion barrier layer 2.
As an example, the oxygen atom diffusion barrier layer 2 may include silicon oxide layer, the oxygen atom diffusion barrier layer 2
Thickness may include 1 nanometer (nm)~10 nanometer, it is preferable that in the present embodiment, the thickness of the oxygen atom diffusion barrier layer 2
Preferably 1 nanometer~2 nanometers, for example, 1 nanometer, 1.5 nanometers or 2 nanometers.
In step 3), referring to Fig. 3, it is thin to form the oxide in the upper surface of the oxygen atom diffusion barrier layer 2
Film 1.
As an example, sputtering technology, evaporation technology, chemical vapor deposition (CVD) technique or atomic layer deposition can be used
(ALD) technologies such as technique form the sull 1 in the upper surface of the oxygen atom diffusion barrier layer 2.
As an example, the sull 1 may include that any one may be used as carrier blocking layers or insulating layer
Etc. functional layers oxide skin(coating).For example, the sull 1 may include but be not limited only to molybdenum oxide (MoO3) film.
The preparation method of the structure with sull in the present embodiment passes through first in the upper surface shape of the substrate 3
At one layer of very thin oxygen atom diffusion barrier layer 2, institute then is formed in the upper surface of the oxygen atom diffusion barrier layer 2 again
Sull 1 is stated, at this point, the sull 1 is kept apart via the oxygen atom diffusion barrier layer 2 and the substrate 3,
The i.e. described sull 1 does not contact directly with the substrate 3, and the substrate 3 loses from 1 internal abstraction of sull
Oxygen atom is to form new silicon-oxygen key ability, since the oxygen atom in the sull 1 will not be captured, the oxygen
Oxygen vacancy concentration in compound film 1 not will receive the influence of the substrate 3, and the Lacking oxygen in the sull 1 can be with
Reached by preparation process and be precisely controlled, to realize the properties such as its high work function, high visible transmission and low conductivity；With described
Sull 1 is for Electrochromic Molybdenum Oxide Coatings, the Si substrate will lead to MoO3Become MoOx(x < 3), in order to keep electroneutral,
Part Mo6+Price reduction becomes Mo5+、Mo4+, lead to MoO3Electric property, optical property and the energy band of film change, for example,
Electric conductivity improves, visible light wave range absorbs increase and work function reduces etc., and the oxygen atom diffusion barrier layer 2 can be to avoid this
Kind happens.Further, since the thickness of the oxygen atom diffusion barrier layer 2 is within 2 nanometers, thinner thickness, electronics can be with
Normal transmission by way of tunnelling will not impact the performance of structure or device.
Embodiment two
It is described that there is sull the present invention also provides a kind of structure with sull please continue to refer to Fig. 3
Structure include:
Sull 1；
Oxygen atom diffusion barrier layer 2, the oxygen atom diffusion barrier layer 2 are located at the lower surface of the sull 1；
Substrate 3, the substrate 3 are located at the lower surface of the oxygen atom diffusion barrier layer 2.
As an example, the sull 1 may include that any one may be used as carrier blocking layers or insulating layer
Etc. functional layers oxide skin(coating).For example, the sull 1 may include but be not limited only to molybdenum oxide (MoO3) film.
As an example, the substrate 3 may include but be not limited only to silicon substrate.
As an example, the oxygen atom diffusion barrier layer 2 may include silicon oxide layer, the oxygen atom diffusion barrier layer 2
Thickness may include 1 nanometer (nm)~10 nanometer, it is preferable that in the present embodiment, the thickness of the oxygen atom diffusion barrier layer 2
Preferably 1 nanometer~2 nanometers, for example, 1 nanometer, 1.5 nanometers or 2 nanometers.
In the structure with sull in the present embodiment, by being arranged in the lower surface of the sull 1
The oxygen atom diffusion barrier layer 2, the sull 1 are isolated via the oxygen atom diffusion barrier layer 2 with the substrate 3
It opens, i.e., the described sull 1 does not contact directly with the substrate 3, and the substrate 3 loses out of described sull 1
Capture oxygen atom to form new silicon-oxygen key ability, since the oxygen atom in the sull 1 will not be captured, institute
Stating the oxygen vacancy concentration in sull 1 not will receive the influence of the substrate 3, the Lacking oxygen in the sull 1
It can be reached by preparation process and be precisely controlled, to realize the properties such as its high work function, high visible transmission and low conductivity；With
The sull 1 is for Electrochromic Molybdenum Oxide Coatings, the Si substrate will lead to MoO3Become MoOx(x < 3), in order to keep electricity
Neutrality, part Mo6+Price reduction becomes Mo5+、Mo4+, lead to MoO3Electric property, optical property and the energy band of film change,
For example, electric conductivity improves, visible light wave range absorbs and increases and work function reduces etc., and the oxygen atom diffusion barrier layer 2 can be with
Avoid such case.Further, since the thickness of the oxygen atom diffusion barrier layer 2, within 2 nanometers, thinner thickness is electric
Son can will not impact the performance of structure or device the normal transmission by way of tunnelling.
Embodiment three
Fig. 4 to Fig. 9 is please referred to, the present invention also provides a kind of preparation method of structure with sull, the tools
There is the preparation method of the structure of sull to include the following steps:
1) sull is prepared；
2) upper surface of Yu Suoshu sull forms the oxygen atom diffusion barrier layer.
As an example, referring to Fig. 4, further including following steps before executing step 1): providing substrate 3.
As an example, the substrate 3 may include but be not limited only to silicon (Si) substrate.
In step 1), referring to Fig. 5, preparing the sull 1.Specifically, in the upper surface system of the substrate 3
The standby sull 1.
As an example, sputtering technology, evaporation technology, chemical vapor deposition (CVD) technique or atomic layer deposition can be used
(ALD) technologies such as technique form the sull 1 in the upper surface of the oxygen atom diffusion barrier layer 2.
As an example, the sull 1 may include that any one may be used as carrier blocking layers or insulating layer
Etc. functional layers oxide skin(coating).For example, the sull 1 may include but be not limited only to molybdenum oxide (MoO3) film.
In step 2), Fig. 6 to Fig. 8 is please referred to, the upper surface of Yu Suoshu sull 1 forms the oxygen atom diffusion
Barrier layer 2.
In one example, step 2) may include steps of:
2-1) upper surface of the sull 1 is handled, is formed with the upper surface in the sull 1
Oxygen-rich layer 11, as shown in fig. 6, the accounting of oxygen atom is greater than oxygen atom in the sull 1 and accounts in the oxygen-rich layer 11
Than；
2-2) upper surface of Yu Suoshu oxygen-rich layer 11 forms metal electrode 4, and the metal electrode 4 and the oxygen-rich layer 11 are anti-
It should be hindered using forming metal oxide layer between the metal electrode 4 and the sull 1 and being spread as the oxygen atom
Barrier 2, as shown in Figure 7.
As an example, step 2-1) in, it can be carried out using upper surface of the ozone treatment technique to the sull 1
Processing, forms the oxygen-rich layer 11 with the upper surface in the sull 1.
As an example, step 2-2) in, it can use but be not limited only to depositing operation in the upper surface of the oxygen-rich layer 11
The metal electrode 4 is formed, the metal electrode 4 may include but be not limited only to aluminium (Al) electrode.Aluminium oxide the enthalpy of formation (-
1675.7kJ/mol) it is far below the enthalpy of formation (for example, the enthalpy of formation -745.1kJ/mol of MoO3) of sull 1, or even ratio
The enthalpy of formation of silica is lower, and therefore, the metal electrodes such as aluminium are easier to capture the original of the oxygen in the sull 1 than silicon substrate
Son.In the present embodiment, accounted for since the accounting of oxygen atom in the oxygen-rich layer 11 is greater than oxygen atom in the sull 1
Than extra oxygen atom reacts with the metal electrode 4 being in contact with it in the oxygen-rich layer 11, on the boundary of the two contact
The very thin compact metal oxide layer (for example, alumina layer) of a layer thickness is formed at face.It is used to form as the oxygen atom
Oxygen atom in the metal oxide layer of diffusion barrier layer 2 comes from the oxygen atom in the oxygen-rich layer 11, avoids
The metal electrode 4 is from the 1 internal abstraction oxygen atom of sull, so that it is guaranteed that the Lacking oxygen in the sull 1
Concentration not will receive the influence of the metal electrode 4, and the Lacking oxygen in the sull 1 can be reached by preparation process
It is precisely controlled, to realize the properties such as its high work function, high visible transmission and low conductivity.
In another example, referring to Fig. 8, sputtering technology, evaporation technology, chemical vapor deposition can be used but be not limited only to
It is former that the product technologies such as technique or atom layer deposition process directly directly form one layer of oxygen in the upper surface of the sull 1
Sub- diffusion barrier layer 2.
As an example, referring to Fig. 9, forming the oxygen atom diffusion barrier layer 2 in the upper surface of the sull 1
Afterwards further include following steps: the upper surface of Yu Suoshu oxygen atom diffusion barrier layer 2 forms metal electrode 4.Specifically, the metal
Electrode 4 may include but be not limited only to aluminium electrode.
It should be noted that being formed directly into the oxygen atom diffusion of 1 upper surface of sull in the example
The enthalpy of formation on barrier layer 2 is less than the enthalpy of formation of the metal oxide of the metal electrode 4, that is, the metal oxygen of the metal electrode 4
The enthalpy of formation of compound is not less than the enthalpy of formation of the oxygen atom diffusion barrier layer 2, prevent the metal electrode 4 is from from the oxygen
1 internal abstraction oxygen atom of compound film, so that it is guaranteed that the oxygen vacancy concentration in the sull 1 not will receive the metal electricity
The influence of pole 4, the Lacking oxygen in the sull 1 can be reached by preparation process to be precisely controlled, to realize its Gao Gong
The properties such as function, high visible transmission and low conductivity.
As an example, the oxygen atom diffusion barrier layer 2 include aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer,
In tungsten oxide layer, zinc oxide film, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer and silicon nitride layer
It is at least one.
As an example, the thickness of the oxygen atom diffusion barrier layer 2 may include 1 nanometer (nm)~10 nanometer, it is preferable that
In the present embodiment, the thickness of the oxygen atom diffusion barrier layer 2 is preferably 1 nanometer~2 nanometers, for example, 1 nanometer, 1.5 nanometers or
2 nanometers.Since the thickness of the oxygen atom diffusion barrier layer 2 is within 2 nanometers, thinner thickness, electronics can pass through tunnelling
The normal transmission of mode will not impact the performance of structure or device.
Example IV
It is described that there is oxidation the present invention also provides a kind of structure with sull please continue to refer to Fig. 7 and Fig. 9
The structure of object film includes:
Sull 1；
Oxygen atom diffusion barrier layer 2, the oxygen atom diffusion barrier layer 2 are located at the upper surface of the sull 1；
Metal electrode 4, the metal electrode 4 are located at the upper surface of the oxygen atom diffusion barrier layer 2, the metal electrode
The enthalpy of formation of 4 metal oxide is less than the enthalpy of formation of the oxygen atom diffusion barrier layer 2.The metal oxygen of the metal electrode 4
The enthalpy of formation of compound is not less than the enthalpy of formation of the oxygen atom diffusion barrier layer 2, prevent the metal electrode 4 is from from the oxygen
1 internal abstraction oxygen atom of compound film, so that it is guaranteed that the oxygen vacancy concentration in the sull 1 not will receive the metal electricity
The influence of pole 4, the Lacking oxygen in the sull 1 can be reached by preparation process to be precisely controlled, to realize its Gao Gong
The properties such as function, high visible transmission and low conductivity.
As an example, the sull 1 may include that any one may be used as carrier blocking layers or insulating layer
Etc. functional layers oxide skin(coating).For example, the sull 1 may include but be not limited only to molybdenum oxide (MoO3) film.
As an example, the metal electrode 4 may include but be not limited only to aluminium electrode.
As an example, the oxygen atom diffusion barrier layer 2 can be reacted with oxygen-rich layer via the metal electrode 4 and be obtained
It arrives, the oxygen atom diffusion barrier layer 2 can also use but be not limited only to sputtering technology, evaporation technology, chemical vapor deposition work
The technologies such as skill or atom layer deposition process are formed directly into the upper surface of the sull 1.
As an example, the oxygen atom diffusion barrier layer 2 include aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer,
Molybdenum oxide layer, tungsten oxide layer, zinc oxide film, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer and nitridation
At least one of silicon layer.
As an example, the thickness of the oxygen atom diffusion barrier layer 2 may include 1 nanometer (nm)~10 nanometer, it is preferable that
In the present embodiment, the thickness of the oxygen atom diffusion barrier layer 2 is preferably 1 nanometer~2 nanometers, for example, 1 nanometer, 1.5 nanometers or
2 nanometers.Since the thickness of the oxygen atom diffusion barrier layer 2 is within 2 nanometers, thinner thickness, electronics can pass through tunnelling
The normal transmission of mode will not impact the performance of structure or device.
As an example, the structure with sull further includes substrate 3, the substrate 3 is located at the oxide
The lower surface of film 1
As an example, the substrate 3 may include but be not limited only to silicon substrate.
Embodiment five
Figure 10 to Figure 16 is please referred to, the present invention also provides a kind of preparation methods of structure with sull, have
The preparation method of the structure of the sull includes the following steps:
1) substrate is provided；
2) upper surface of Yu Suoshu substrate forms the first oxygen atom diffusion barrier layer；
3) upper surface of the first oxygen atom of Yu Suoshu diffusion barrier layer forms the sull；
4) upper surface of Yu Suoshu sull forms the second oxygen atom diffusion barrier layer.
In step 1), referring to Fig. 10, providing substrate 3.
As an example, the substrate 3 may include but be not limited only to silicon (Si) substrate.
In step 2), Figure 11 is please referred to, the upper surface of Yu Suoshu substrate 3 forms the first oxygen atom diffusion barrier layer 21.
As an example, nitric acid oxidation treatment process, UV light-induced oxidation technology, wet oxidation containing Ozone Water can be used
Technique, dry oxidation technique, ozone treatment technique or oxygen plasma treatment technique to the upper surface of the substrate 3 at
Reason, forms the first oxygen atom diffusion barrier layer 21 with the upper surface in the substrate 3.Preferably, using ozone treatment work
Skill or oxygen plasma treatment technique the upper surface of the substrate 3 is handled formed with the upper surface in the substrate 3 it is described
First oxygen atom diffusion barrier layer 21, oxygen plasma have stronger oxidisability, can be in a relatively short period of time in the lining
The upper surface at bottom 3 forms the first oxygen atom diffusion barrier layer 21.
As an example, the first oxygen atom diffusion barrier layer 21 may include silicon oxide layer, first oxygen atom expands
The thickness for dissipating barrier layer 21 may include 1 nanometer (nm)~10 nanometer, it is preferable that in the present embodiment, first oxygen atom expands
The thickness for dissipating barrier layer 21 is preferably 1 nanometer~2 nanometers, for example, 1 nanometer, 1.5 nanometers or 2 nanometers.
In step 3), Figure 12 is please referred to, the upper surface of the first oxygen atom of Yu Suoshu diffusion barrier layer 21 forms the oxygen
Compound film 1.
As an example, sputtering technology, evaporation technology, chemical vapor deposition (CVD) technique or atomic layer deposition can be used
(ALD) technologies such as technique form the sull 1 in the upper surface of the first oxygen atom diffusion barrier layer 21.
As an example, the sull 1 may include that any one may be used as carrier blocking layers or insulating layer
Etc. functional layers oxide skin(coating).For example, the sull 1 may include but be not limited only to molybdenum oxide (MoO3) film.
One layer of very thin the first oxygen atom diffusion barrier layer 21 is formed in the upper surface of the substrate 3 by elder generation, so
The sull 1 is formed in the upper surface of the first oxygen atom diffusion barrier layer 21 again afterwards, at this point, the oxide is thin
Film 1 is kept apart via the first oxygen atom diffusion barrier layer 21 with the substrate 3, i.e., the described sull 1 not with it is described
Substrate 3 directly contacts, and the substrate 3 loses from the 1 internal abstraction oxygen atom of sull to form new silicon-oxygen key
Ability, since the oxygen atom in the sull 1 will not be captured, the oxygen vacancy concentration in the sull 1 is not
Will receive the influence of the substrate 3, the Lacking oxygen in the sull 1 can be reached by preparation process to be precisely controlled,
To realize the properties such as its high work function, high visible transmission and low conductivity；It meanwhile with the sull 1 being molybdenum oxide
For film, the Si substrate will lead to MoO3Become MoOx(x < 3), in order to keep electroneutral, part Mo6+Price reduction becomes
Mo5+、Mo4+, lead to MoO3Electric property, optical property and the energy band of film change, for example, electric conductivity raising, visible light
Wave band absorbs increase and work function reduction etc., the first oxygen atom diffusion barrier layer of 1 lower surface of sull
21 be silicon oxide layer, can be to avoid this phenomenon.Further, since the thickness of the first oxygen atom diffusion barrier layer 21 is received 2
Within rice, thinner thickness, electronics can not will cause shadow to the performance of structure or device the normal transmission by way of tunnelling
It rings.
In step 4), Figure 13 to Figure 16 is please referred to, the upper surface of Yu Suoshu sull 1 forms the second oxygen atom and expands
Dissipate barrier layer 22.
In one example, step 4) may include steps of:
4-1) upper surface of the sull 1 is handled, is formed with the upper surface in the sull 1
Oxygen-rich layer 11, as shown in figure 13, the accounting of oxygen atom is greater than oxygen atom in the sull 1 and accounts in the oxygen-rich layer 11
Than；
4-2) upper surface of Yu Suoshu oxygen-rich layer 11 forms metal electrode 4, and the metal electrode 4 and the oxygen-rich layer 11 are anti-
It should be expanded using forming metal oxide layer as second oxygen atom between the metal electrode 4 and the sull 1
Barrier layer 22 is dissipated, as shown in figure 14.
As an example, step 4-1) in, it can be carried out using upper surface of the ozone treatment technique to the sull 1
Processing, forms the oxygen-rich layer 11 with the upper surface in the sull 1.
As an example, step 4-2) in, it can use but be not limited only to depositing operation in the upper surface of the oxygen-rich layer 11
The metal electrode 4 is formed, the metal electrode 4 may include but be not limited only to aluminium (Al) electrode.Aluminium oxide the enthalpy of formation (-
1675.7kJ/mol) it is far below the enthalpy of formation (for example, the enthalpy of formation -745.1kJ/mol of MoO3) of sull 1, or even ratio
The enthalpy of formation of silica is lower, and therefore, the metal electrodes such as aluminium are easier to capture the original of the oxygen in the sull 1 than silicon substrate
Son.In the present embodiment, accounted for since the accounting of oxygen atom in the oxygen-rich layer 11 is greater than oxygen atom in the sull 1
Than extra oxygen atom reacts with the metal electrode 4 being in contact with it in the oxygen-rich layer 11, on the boundary of the two contact
The very thin compact metal oxide layer (for example, alumina layer) of a layer thickness is formed at face.It is used to form as second oxygen
Oxygen atom in the metal oxide layer of atom diffusion barrier layer 22 comes from the oxygen atom in the oxygen-rich layer 11, keeps away
The metal electrode 4 is exempted from from the 1 internal abstraction oxygen atom of sull, so that it is guaranteed that the oxygen in the sull 1
Vacancy concentration not will receive the influence of the metal electrode 4, and the Lacking oxygen in the sull 1 can pass through preparation process
Reach and be precisely controlled, to realize the properties such as its high work function, high visible transmission and low conductivity.
In another example, Figure 15 is please referred to, sputtering technology, evaporation technology, chemical gaseous phase can be used but be not limited only to
The technologies such as depositing operation or atom layer deposition process directly form one layer of second oxygen in the upper surface of the sull 1
Atom diffusion barrier layer 22.
As an example, please referring to Figure 16, the upper surface of Yu Suoshu sull 1 forms the second oxygen atom diffusion resistance
Further include following steps after barrier 22: the upper surface of the second oxygen atom of Yu Suoshu diffusion barrier layer 22 forms metal electrode 4.Specifically
, the metal electrode 4 may include but be not limited only to aluminium electrode.
It should be noted that being formed directly into second oxygen atom of 1 upper surface of sull in the example
The enthalpy of formation of diffusion barrier layer 22 is less than the enthalpy of formation of the metal oxide of the metal electrode 4, that is, the metal electrode 4
The enthalpy of formation of metal oxide is not less than the enthalpy of formation of the second oxygen atom diffusion barrier layer 22, so that the metal electrode 4
It cannot be from the 1 internal abstraction oxygen atom of sull, so that it is guaranteed that oxygen vacancy concentration in the sull 1 will not be by
To the influence of the metal electrode 4, the Lacking oxygen in the sull 1 can be reached by preparation process to be precisely controlled,
To realize the properties such as its high work function, high visible transmission and low conductivity.
As an example, the second oxygen atom diffusion barrier layer 22 includes aluminium oxide, silicon oxide layer, hafnium oxide layer, oxidation
Vanadium layers, molybdenum oxide layer, tungsten oxide layer, zinc oxide film, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer
And at least one of silicon nitride layer.
As an example, the thickness of the second oxygen atom diffusion barrier layer 22 may include 1 nanometer (nm)~10 nanometer, it is excellent
Selection of land, in the present embodiment, the thickness of the second oxygen atom diffusion barrier layer 22 is preferably 1 nanometer~2 nanometers, and for example, 1 receives
Rice, 1.5 nanometers or 2 nanometers.Since the thickness of the second oxygen atom diffusion barrier layer 22 is within 2 nanometers, thinner thickness, electricity
Son can will not impact the performance of structure or device the normal transmission by way of tunnelling.
Embodiment six
It is described to have oxide thin the present invention also provides a kind of structure with sull please continue to refer to Figure 16
The structure of film includes:
Substrate 3；
First oxygen atom diffusion barrier layer 21, the first oxygen atom diffusion barrier layer 21 are located at the upper table of the substrate 3
Face；
Sull 1, the sull 1 are located at the upper surface of the first oxygen atom diffusion barrier layer 21；
Second oxygen atom diffusion barrier layer 22, the second oxygen atom diffusion barrier layer 22 are located at the sull 1
Upper surface；
Metal electrode 4, the metal electrode 4 are located at the upper surface on second oxygen atom barrier layer 22.
As an example, the substrate 3 may include but be not limited only to silicon (Si) substrate.
As an example, the first oxygen atom diffusion barrier layer 21 may include silicon oxide layer, first oxygen atom expands
The thickness for dissipating barrier layer 21 may include 1 nanometer (nm)~10 nanometer, it is preferable that in the present embodiment, first oxygen atom expands
The thickness for dissipating barrier layer 21 is preferably 1 nanometer~2 nanometers, for example, 1 nanometer, 1.5 nanometers or 2 nanometers.
As an example, the sull 1 may include that any one may be used as carrier blocking layers or insulating layer
Etc. functional layers oxide skin(coating).For example, the sull 1 may include but be not limited only to molybdenum oxide (MoO3) film.
One layer of very thin the first oxygen atom diffusion barrier layer 21, the oxidation are formed in the upper surface of the substrate 3
Object film 1 is kept apart via the first oxygen atom diffusion barrier layer 21 with the substrate 3, i.e., the described sull 1 not with
The substrate 3 directly contacts, and the substrate 3 loses from the 1 internal abstraction oxygen atom of sull to form new silicon-oxygen
The ability of key, since the oxygen atom in the sull 1 will not be captured, the Lacking oxygen in the sull 1 is dense
Degree not will receive the influence of the substrate 3, and the Lacking oxygen in the sull 1 can reach accurate control by preparation process
System, to realize the properties such as its high work function, high visible transmission and low conductivity；Meanwhile with the sull 1 be oxidation
For molybdenum film, the Si substrate leads to MoO3Become MoOx(x < 3), in order to keep electroneutral, part Mo6+Price reduction becomes
Mo5+、Mo4+, lead to MoO3Electric property, optical property and the energy band of film change, for example, electric conductivity raising, visible light
Wave band absorbs increase and work function reduction etc., the first oxygen atom diffusion barrier layer of 1 lower surface of sull
21 be silicon oxide layer, can avoid this phenomenon.Further, since the thickness of the first oxygen atom diffusion barrier layer 21 is at 2 nanometers
Within, thinner thickness, electronics can not will cause shadow to the performance of structure or device the normal transmission by way of tunnelling
It rings.
As an example, the second oxygen atom diffusion barrier layer 22 can be reacted via the metal electrode 4 with oxygen-rich layer
And obtain, the second oxygen atom diffusion barrier layer 22 can also use but be not limited only to sputtering technology, evaporation technology, chemical gas
The technologies such as phase depositing operation or atom layer deposition process are formed directly into the upper surface of the sull 1.
Specifically, the metal electrode 4 may include but be not limited only to aluminium electrode.
It should be noted that being formed directly into second oxygen atom of 1 upper surface of sull in the example
The enthalpy of formation of diffusion barrier layer 22 is less than the enthalpy of formation of the metal oxide of the metal electrode 4, that is, the metal electrode 4
The enthalpy of formation of metal oxide is not less than the enthalpy of formation of the second oxygen atom diffusion barrier layer 22, so that the metal electrode 4
It cannot be from the 1 internal abstraction oxygen atom of sull, so that it is guaranteed that oxygen vacancy concentration in the sull 1 will not be by
To the influence of the metal electrode 4, the Lacking oxygen in the sull 1 can be reached by preparation process to be precisely controlled,
To realize the properties such as its high work function, high visible transmission and low conductivity.
As an example, the second oxygen atom diffusion barrier layer 22 includes aluminium oxide, silicon oxide layer, hafnium oxide layer, oxidation
Vanadium layers, molybdenum oxide layer, tungsten oxide layer, zinc oxide film, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer
And at least one of silicon nitride layer.
As an example, the thickness of the second oxygen atom diffusion barrier layer 22 may include 1 nanometer (nm)~10 nanometer, it is excellent
Selection of land, in the present embodiment, the thickness of the second oxygen atom diffusion barrier layer 22 is preferably 1 nanometer~2 nanometers, and for example, 1 receives
Rice, 1.5 nanometers or 2 nanometers.Since the thickness of the second oxygen atom diffusion barrier layer 22 is within 2 nanometers, thinner thickness, electricity
Son can will not impact the performance of structure or device the normal transmission by way of tunnelling.
In conclusion the present invention provides a kind of structure and preparation method thereof with sull, it is described that there is oxidation
The preparation method of the structure of object film includes the following steps: to prepare sull, an at least surface for the sull
It is formed with oxygen atom diffusion barrier layer.The present invention is by forming oxygen atom diffusion barrier on an at least surface for sull
Layer, can directly contact to avoid sull with substrate or metal electrode, and the oxygen atom in guarantee sull will not be by
Substrate or metal electrode are captured, it is ensured that and the properties such as conductivity, work function and refractive index of sull will not change, from
And ensure the function of device, it is ensured that device will not fail.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (29)
1. a kind of preparation method of the structure with sull, which comprises the steps of:
Sull is prepared, an at least surface for the sull is formed with oxygen atom diffusion barrier layer.
2. the preparation method of the structure according to claim 1 with sull, which is characterized in that have the oxygen
The preparation method of the structure of compound film includes the following steps:
Substrate is provided；
The oxygen atom diffusion barrier layer is formed in the upper surface of the substrate；
The sull is formed in the upper surface of the oxygen atom diffusion barrier layer.
3. the preparation method of the structure according to claim 2 with sull, which is characterized in that use Nitric Acid Oxidation
Change treatment process, UV light-induced oxidation technology, wet process oxidation technology containing Ozone Water, dry oxidation technique, ozone treatment technique
Or oxygen plasma treatment technique handles the upper surface of the substrate, forms the oxygen with the upper surface in the substrate
Atom diffusion barrier layer.
4. the preparation method of the structure according to claim 2 with sull, which is characterized in that the substrate packet
Silicon substrate is included, the oxygen atom diffusion barrier layer includes silicon oxide layer.
5. the preparation method of the structure according to claim 1 with sull, which is characterized in that have the oxygen
The preparation method of the structure of compound film includes the following steps:
Prepare the sull；
The oxygen atom diffusion barrier layer is formed in the upper surface of the sull.
6. the preparation method of the structure according to claim 5 with sull, which is characterized in that in the oxidation
The upper surface of object film forms the oxygen atom diffusion barrier layer and includes the following steps:
The upper surface of the sull is handled, to form oxygen-rich layer, institute in the upper surface of the sull
The accounting for stating oxygen atom in oxygen-rich layer is greater than the accounting of oxygen atom in the sull；
Metal electrode is formed in the upper surface of the oxygen-rich layer, the metal electrode is reacted with the oxygen-rich layer in the metal
Metal oxide layer is formed between electrode and the sull as the oxygen atom diffusion barrier layer.
7. the preparation method of the structure according to claim 6 with sull, which is characterized in that using at ozone
Science and engineering skill handles the upper surface of the sull, is formed with the upper surface in the sull described oxygen-enriched
Layer.
8. the preparation method of the structure according to claim 5 with sull, which is characterized in that in the oxidation
The upper surface of object film further includes following steps after forming the oxygen atom diffusion barrier layer: Yu Suoshu oxygen atom diffusion barrier layer
Upper surface form metal electrode, the enthalpy of formation of the metal oxide of the metal electrode is not less than the oxygen atom diffusion barrier
The enthalpy of formation of layer.
9. the preparation method of the structure according to claim 8 with sull, which is characterized in that the oxygen atom
Diffusion barrier layer includes aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer, molybdenum oxide layer, tungsten oxide layer, zinc oxide film, oxygen
Change at least one of layers of copper, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer and silicon nitride layer.
10. the preparation method of the structure according to claim 5 with sull, which is characterized in that substrate is provided,
In preparing the sull on the substrate.
11. the preparation method of the structure according to any one of claim 1 to 10 with sull, feature exist
In the thickness of the oxygen atom diffusion barrier layer includes 1 nanometer~10 nanometers.
12. the preparation method of the structure according to claim 1 with sull, which is characterized in that have described
The preparation method of the structure of sull includes the following steps:
Substrate is provided；
The first oxygen atom diffusion barrier layer is formed in the upper surface of the substrate；
The sull is formed in the upper surface of the first oxygen atom diffusion barrier layer；
The second oxygen atom diffusion barrier layer is formed in the upper surface of the sull.
13. the preparation method of the structure according to claim 12 with sull, which is characterized in that use nitric acid
Oxidation processing technique, UV light-induced oxidation technology, wet process oxidation technology containing Ozone Water, dry oxidation technique, ozone treatment work
Skill or oxygen plasma treatment technique handle the upper surface of the substrate, are formed with the upper surface in the substrate described
First oxygen atom diffusion barrier layer.
14. the preparation method of the structure according to claim 12 with sull, which is characterized in that the substrate
Including silicon substrate, the first oxygen atom diffusion barrier layer includes silicon oxide layer.
15. the preparation method of the structure according to claim 12 with sull, which is characterized in that Yu Suoshu oxygen
The upper surface of compound film forms the second oxygen atom diffusion barrier layer and includes the following steps:
The upper surface of the sull is handled, to form oxygen-rich layer, institute in the upper surface of the sull
The accounting for stating oxygen atom in oxygen-rich layer is greater than the accounting of oxygen atom in the sull；
Metal electrode is formed in the upper surface of the oxygen-rich layer, the metal electrode is reacted with the oxygen-rich layer in the metal
Metal oxide layer is formed between electrode and the sull as the second oxygen atom diffusion barrier layer.
16. the preparation method of the structure according to claim 15 with sull, which is characterized in that use ozone
Treatment process handles the upper surface of the sull, forms the richness with the upper surface in the sull
Oxygen layer.
17. the preparation method of the structure according to claim 12 with sull, which is characterized in that Yu Suoshu oxygen
The upper surface of compound film further includes following steps after forming the second oxygen atom diffusion barrier layer: the second oxygen atom of Yu Suoshu
The upper surface of diffusion barrier layer forms metal electrode, and the enthalpy of formation of the metal oxide of the metal electrode is not less than described second
The enthalpy of formation of oxygen atom diffusion barrier layer.
18. the preparation method of the structure according to claim 17 with sull, which is characterized in that described second
Oxygen atom diffusion barrier layer includes aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer, molybdenum oxide layer, tungsten oxide layer, oxidation
At least one of zinc layers, copper oxide, silver oxide layer, stannic oxide layer, indium oxide layer, aln layer and silicon nitride layer.
19. the preparation method of the structure described in any one of 2 to 18 with sull according to claim 1, feature
It is, the thickness of the first oxygen atom diffusion barrier layer includes 1 nanometer~10 nanometers, the second oxygen atom diffusion barrier layer
Thickness include 1 nanometer~10 nanometers.
20. a kind of structure with sull characterized by comprising
An at least surface for sull, the sull is formed with oxygen atom diffusion barrier layer.
21. the structure according to claim 20 with sull, which is characterized in that described that there is sull
Structure further include: substrate, the substrate are located at the lower surface of the oxygen atom diffusion barrier layer, the oxygen atom diffusion barrier
Layer is located at the lower surface of the sull.
22. the structure according to claim 21 with sull, which is characterized in that the substrate includes silicon lining
Bottom, the oxygen atom diffusion barrier layer includes silicon oxide layer.
23. the structure according to claim 20 with sull, which is characterized in that described that there is sull
Structure further include metal electrode, the oxygen atom diffusion barrier layer is located at the upper surface of the sull, the metal
Electrode is located at the upper surface of the oxygen atom diffusion barrier layer, and the enthalpy of formation of the metal oxide of the metal electrode is not less than institute
State the enthalpy of formation of oxygen atom diffusion barrier layer.
24. the structure according to claim 23 with sull, which is characterized in that the oxygen atom diffusion barrier
Layer includes aluminium oxide, silicon oxide layer, hafnium oxide layer, vanadium oxide layer, molybdenum oxide, tungsten oxide layer, zinc oxide film, copper oxide, oxygen
Change at least one of silver layer, stannic oxide layer, indium oxide layer, aln layer and silicon nitride layer.
25. the structure according to claim 20 with sull, which is characterized in that described that there is sull
Structure further include substrate, the substrate is located at the lower surface of the sull.
26. with the structure of sull according to any one of claim 20 to 25, which is characterized in that the oxygen
The thickness of atom diffusion barrier layer includes 1 nanometer~10 nanometers.
27. the structure according to claim 20 with sull, which is characterized in that the oxygen atom diffusion barrier
Layer includes the first oxygen atom barrier layer and the second oxygen atom barrier layer；The structure with sull further include:
Substrate, first oxygen atom barrier layer are located at the upper surface of the substrate；The sull is located at described first
The upper surface on oxygen atom barrier layer；Second oxygen atom barrier layer is located at the upper surface of the sull；
Metal electrode, positioned at the upper surface on second oxygen atom barrier layer.
28. the structure according to claim 27 with sull, which is characterized in that the substrate includes silicon lining
Bottom, the first oxygen atom diffusion barrier layer includes silicon oxide layer, and the second oxygen atom diffusion barrier layer includes aluminium oxide, oxygen
SiClx layer, hafnium oxide layer, vanadium oxide layer, molybdenum oxide layer, tungsten oxide layer, zinc oxide film, copper oxide, silver oxide layer, tin oxide
At least one of layer, indium oxide layer, aln layer and silicon nitride layer.
29. the preparation method of the structure according to claim 27 or 28 with sull, which is characterized in that described
The thickness of first oxygen atom diffusion barrier layer includes 1 nanometer~10 nanometers, the thickness packet of the second oxygen atom diffusion barrier layer
Include 1 nanometer~10 nanometers.
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