CN109935581A - Bidirectional triode thyristor ESD-protection structure and soi structure - Google Patents
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- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 26
- 238000000605 extraction Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 4
- 101100365087 Arabidopsis thaliana SCRA gene Proteins 0.000 description 10
- 101000668165 Homo sapiens RNA-binding motif, single-stranded-interacting protein 1 Proteins 0.000 description 10
- 102100039692 RNA-binding motif, single-stranded-interacting protein 1 Human genes 0.000 description 10
- 101150105073 SCR1 gene Proteins 0.000 description 10
- 101100134054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) NTG1 gene Proteins 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 101100207343 Antirrhinum majus 1e20 gene Proteins 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
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Abstract
The invention particularly relates to bidirectional triode thyristor ESD-protection structure and soi structures: the first N-doped zone, P-doped zone and the second N-doped zone are provided in substrate P；The first p-type heavily doped region, the first N-type heavily doped region and the second N-type heavily doped region are provided in the first N-doped zone, and, the second N-type heavily doped region is located at the intersection of the first N-doped zone and P-doped zone；Third N-type heavily doped region, the 4th N-type heavily doped region and the second p-type heavily doped region are set gradually from left to right in the second N-doped zone, third N-type heavily doped region is located at the intersection of P-doped zone and the second N-doped zone；Gate oxide is covered on the surface of P-doped zone and between the second N-type heavily doped region and third N-type heavily doped region；One end of first extraction electrode is connect with the first p-type heavily doped region and the first N-type heavily doped region respectively, and one end of the second extraction electrode is connect with the 4th N-type heavily doped region and the second p-type heavily doped region respectively.
Description
Technical field
The present invention relates to Flouride-resistani acid phesphatase technical field more particularly to bidirectional triode thyristor ESD-protection structures and soi structure.
Background technique
Static discharge (ESD, Electron Static Discharge) be when the pin suspension joint of an integrated circuit,
A large amount of electrostatic charges pour into the instantaneous process of integrated circuit, whole process about time-consuming 100ns from outside to inside.In the quiet of integrated circuit
The high pressure that hundreds if not thousands of volts can be generated when discharge of electricity, by the gate oxide breakdown of input stage in integrated circuit.With collection
At the progress of circuit technology, the characteristic size of metal-oxide-semiconductor is smaller and smaller, and the thickness of gate oxide is also more and more thinner, in this trend
Under, carry out static electricity discharge charge using high performance ESD protection device to protect grid oxic horizon to seem particularly significant.
There are mainly four types of the models of ESD event: human body discharge's model (HBM), mechanical discharging model (MM), device charging mould
Type (CDM) and electric field induction model (FIM).For general IC products, generally to pass through human body discharge's model, machine
The test of tool discharging model and device charge model.In order to bear so high static discharge voltage, integrated circuit is produced
Product generally have to using the electrostatic discharge protector with high-performance, high tolerance.Wherein, silicon-controlled device (SCR,
Silicon Controlled Rectifier) it is one of most efficient ESD protective device, very due to its maintenance voltage
Low, so being able to bear very high ESD electric current, therefore, SCR naturally has high ESD robustness.Compare other ESD protectors
The unit area ESD protective capability of part, SCR device is most strong.
General SCR device is one direction ESD protective device, and in order to provide the ESD protective device of twocouese, existing skill
Art is realized that the ESD in another direction is protected by parasitic diode or a diode in parallel.However, using additional two
Pole pipe is protected to carry out the ESD in another direction, not only will increase chip area, moreover, holding in some input ports needs
By in the circuit of negative voltage, when carrying out opposite direction protection using diode, it is easy to produce electric leakage.
Summary of the invention
In view of the above problems, it proposes on the present invention overcomes the above problem or at least be partially solved in order to provide one kind
State the bidirectional triode thyristor ESD-protection structure and soi structure of problem.
The present invention provides a kind of bidirectional triode thyristor ESD-protection structure, including substrate P, and setting is served as a contrast in the P
The first N-doped zone, P-doped zone, the second N-doped zone, the first p-type heavily doped region, the first N-type heavily doped region in bottom,
Second N-type heavily doped region, third N-type heavily doped region, the 4th N-type heavily doped region, the second p-type heavily doped region, the first extraction electrode,
Second extraction electrode and gate oxide；
First N-doped zone, the P-doped zone and described have been set gradually from left to right in the substrate P
Second N-doped zone；
The first p-type heavily doped region, the first N have been set gradually from left to right in first N-doped zone
Type heavily doped region and the second N-type heavily doped region, and, the second N-type heavily doped region be located at first N-doped zone and
The intersection of the P-doped zone；
The third N-type heavily doped region, the 4th N have been set gradually from left to right in second N-doped zone
Type heavily doped region and the second p-type heavily doped region, and, the third N-type heavily doped region is located at the P-doped zone and described
The intersection of second N-doped zone；
The gate oxide is covered on the surface of the P-doped zone and is located at the second N-type heavily doped region and described
Between third N-type heavily doped region；
One end of first extraction electrode respectively with the first p-type heavily doped region and the first N-type heavily doped region
Connection, one end of second extraction electrode connect with the 4th N-type heavily doped region and the second p-type heavily doped region respectively
It connects；
Wherein, by the first p-type heavily doped region, first N-doped zone, the P-doped zone, the 2nd N
Type doped region and the 4th N-type heavily doped region constitute forward current, by the second p-type heavily doped region, second n-type doping
Area, the P-doped zone, first N-doped zone and the first N-type heavily doped region constitute reverse current, to be formed
Bi-directional ESD.
Preferably, the length of the gate oxide is 0.18-2um.
Preferably, the width of the P-doped zone is 2-6um, and the ion concentration of the P-doped zone is 1e15-1e18.
Preferably, the ion concentration of the first N-type heavily doped region and the second N-type heavily doped region is 1e15-1e18.
Preferably, the first N-type heavily doped region, the second N-type heavily doped region, the third N-type heavily doped region, institute
The ion concentration for stating the 4th N-type heavily doped region, the first p-type heavily doped region and the second p-type heavily doped region is 1e19-
1e20。
Preferably, the substrate P with a thickness of 300-500um.
Based on the same inventive concept, the present invention provides a kind of soi structure, including buried oxide, silicon substrate, isolated area and such as
Bidirectional triode thyristor ESD-protection structure above-mentioned；
The buried oxide setting is on the silicon substrate；
The bidirectional triode thyristor ESD-protection structure is arranged in the buried oxide；
The isolated area is arranged in the buried oxide, and is located at the bidirectional triode thyristor ESD-protection structure
Two sides；
Preferably, the buried oxide with a thickness of 1-3um.
Preferably, the isolated area is deep trench isolation area.
Preferably, the isolated area with a thickness of 1-3um.
It is according to the present invention according to bidirectional triode thyristor ESD-protection structure and soi structure, including substrate P, Yi Jishe
Set the first N-doped zone, P-doped zone, the second N-doped zone, the first p-type heavily doped region, the first N-type weight in substrate P
Doped region, the second N-type heavily doped region, third N-type heavily doped region, the 4th N-type heavily doped region, the second p-type heavily doped region, first are drawn
Electrode, the second extraction electrode and gate oxide out have been set gradually from left to right the first N-doped zone in substrate P, p-type is mixed
Miscellaneous area and the second N-doped zone have been set gradually from left to right the first p-type heavily doped region, the first N in the first N-doped zone
Type heavily doped region and the second N-type heavily doped region, and, the second N-type heavily doped region is located at the first N-doped zone and P-doped zone
Intersection has been set gradually from left to right third N-type heavily doped region, the 4th N-type heavily doped region and in the second N-doped zone
Two p-type heavily doped regions, and, third N-type heavily doped region is located at the intersection of P-doped zone and the second N-doped zone, gate oxide
It is covered on the surface of P-doped zone and between the second N-type heavily doped region and third N-type heavily doped region, the first extraction electrode
One end connect respectively with the first p-type heavily doped region and the first N-type heavily doped region, one end of the second extraction electrode is respectively with the 4th
N-type heavily doped region and the connection of the second p-type heavily doped region, wherein by the first p-type heavily doped region, first n-type doping
Area, the P-doped zone, second N-doped zone and the 4th N-type heavily doped region constitute forward current, by second p-type
Heavily doped region, second N-doped zone, the P-doped zone, first N-doped zone and the first N-type heavy doping
Area constitutes reverse current, to form bi-directional ESD, the case where the electric leakage occurred when avoiding reverse protection.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects of the present invention, feature and advantage can
It is clearer and more comprehensible, the followings are specific embodiments of the present invention.
Detailed description of the invention
By reading the following detailed description of the preferred embodiment, various other advantages and benefits are common for this field
Technical staff will become clear.The drawings are only for the purpose of illustrating a preferred embodiment, and is not considered as to the present invention
Limitation.And throughout the drawings, identical component is indicated with identical reference pattern.In the accompanying drawings:
Fig. 1 shows the structure chart of bidirectional triode thyristor ESD-protection structure in the embodiment of the present invention；
Fig. 2 shows the structure charts of soi structure in the embodiment of the present invention.
Wherein, 1 is the first N-doped zone, and 2 be P-doped zone, and 3 be the second N-doped zone, and 4 be the first p-type heavy doping
Area, 5 be the first N-type heavily doped region, and 6 be the second N-type heavily doped region, 7 be third N-type heavily doped region, and 8 be the 4th N-type heavy doping
Area, 9 be the second p-type heavily doped region, and T1 is the first extraction electrode, and T2 is the second extraction electrode, and L is gate oxide, P-sub P
Substrate, BOX are buried oxide, and Si is silicon substrate, and TR is isolated area.
Specific embodiment
Exemplary embodiments of the present disclosure are described in more detail below with reference to accompanying drawings.Although showing the disclosure in attached drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
It is limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
It is fully disclosed to those skilled in the art.
The embodiment of the present invention provides a kind of bidirectional triode thyristor ESD-protection structure, as shown in Figure 1, including substrate P (P-
Sub), and the first N-doped zone 1, P-doped zone 2, the second N-doped zone 3, the first p-type that are arranged in substrate P are heavily doped
Miscellaneous area 4, the first N-type heavily doped region 5, the second N-type heavily doped region 6, third N-type heavily doped region 7, the 4th N-type heavily doped region 8,
Two p-type heavily doped regions 9, the first extraction electrode (T1), the second extraction electrode (T2) and gate oxide (L).
Wherein, the first N-doped zone 1, P-doped zone 2 and the second N-type have been set gradually from left to right in substrate P to mix
Miscellaneous area 3.The first p-type heavily doped region 4,5 and of the first N-type heavily doped region have been set gradually from left to right in the first N-doped zone 1
Second N-type heavily doped region 6, and, the second N-type heavily doped region 6 is located at the intersection of the first N-doped zone 1 and P-doped zone 2.?
Third N-type heavily doped region 7, the 4th N-type heavily doped region 8 and the second p-type have been set gradually from left to right in second N-doped zone 3
Heavily doped region 9, and, third N-type heavily doped region 7 is located at the intersection of P-doped zone 2 and the second N-doped zone 3.Gate oxide
It is covered on the surface of P-doped zone 2 and between the second N-type heavily doped region 6 and third N-type heavily doped region 7.First draws electricity
One end of pole is connect with the first p-type heavily doped region 4 and the first N-type heavily doped region 5 respectively, one end of the second extraction electrode respectively with
4th N-type heavily doped region 8 and the connection of the second p-type heavily doped region 9.
It in embodiments of the present invention, is SCR2, the road of SCR2 from the path SCR of the first extraction electrode to the second extraction electrode
Diameter is the 4th N-type heavily doped region of first p-type heavily doped region 4- the first N-doped zone 1-P type doped region the second N-doped zone of 2- 3-
8, SCR2 constitute forward direction ESD electric current.It is SCR1, the path of SCR1 from the path SCR of the second extraction electrode to the first extraction electrode
For second p-type heavily doped region 9- the second N-doped zone 3-P type doped region 2- the first N-doped zone the first N-type of 1- heavily doped region 5,
SCR1 constitutes reversed ESD electric current and releases path.To form the bi-directional ESD based on SCR by SCR1 and SCR2, avoid
The case where electric leakage occurred when reverse protection.
It in embodiments of the present invention, can be with by adjusting the concentration of the second N-type heavily doped region 6 and third N-type heavily doped region 7
Realize the control to the trigger voltage of bidirectional triode thyristor ESD-protection structure, the second N-type heavily doped region 6 and third N-type weight
The concentration of doped region 7 is bigger, and trigger voltage is smaller, otherwise trigger voltage is bigger.
In embodiments of the present invention, the control to trigger voltage, grid oxygen may be implemented by adjusting the length of gate oxide
The length for changing layer is longer, and trigger voltage is bigger, otherwise trigger voltage is smaller.Wherein, the length range of gate oxide is 0.18-
2um。
In embodiments of the present invention, it may be implemented by adjusting the width (D) of P-doped zone 2 to silicon-controlled static discharge
The control of the maintenance voltage of structure is protected, the width of P-doped zone 2 is bigger, and maintenance voltage is bigger, otherwise maintenance voltage is smaller.
Wherein, the width of P-doped zone 2 is 2-6um, and the ion concentration of P-doped zone 2 is 1e15-1e18.
In embodiments of the present invention, for the first N-doped zone 1 and the second N-doped zone 3, ion concentration range
For 1e15-1e18.
In embodiments of the present invention, the thickness range of substrate P is 300-500um.
In embodiments of the present invention, the first N-type heavily doped region 5, the second N-type heavily doped region 6, third N-type heavily doped region 7,
The ion concentration range of 4th N-type heavily doped region 8, the first p-type heavily doped region 4 and the second p-type heavily doped region 9 is 1e19-1e20.
It should be noted that the first p-type heavily doped region 4, the first N-type heavily doped region 5, the second N-type heavily doped region 6, the 3rd N
Type heavily doped region 7, the 4th N-type heavily doped region 8 and the second p-type heavily doped region 9 layout are fixed, and guarantee SCR1 and SCR2 path-length
Unanimously, consistent passage length ensure that as SCR1 with SCR2 characteristic, there is identical trigger voltage and maintenance voltage.T1 is on a left side
Side, T2 on the right, are designed using the structure of symmetry, ESD electric current are made to release more evenly.
It should be noted that N-doped zone is indicated with NX in Figure of description, P-doped zone 2 is indicated with PX, N
Type heavily doped region is with n+It indicates, p-type heavily doped region is with p+It indicates.
Based on the same inventive concept, the embodiment of the present invention also provides a kind of soi structure, as shown in Fig. 2, including buried oxide
(BOX), silicon substrate (Si), isolated area (TR) and bidirectional triode thyristor ESD-protection structure as in the foregoing embodiment.Its
In, buried oxide is arranged on a silicon substrate, and bidirectional triode thyristor ESD-protection structure is arranged in buried oxide, and isolated area is set
It sets in buried oxide, and is located at the two sides of bidirectional triode thyristor ESD-protection structure.
Wherein, buried oxide with a thickness of 1-3um, isolated area is deep trench isolation area, deep trench isolation area with a thickness of 1-
3um。
It should be noted that when common unidirectional SCR device is used for SOI power protection using integrated circuit, in positive ESD stress
Under voltage-current characteristic be in similar " S " type snapback；IV characteristic under reversed ESD stress can then be equivalent to diode
Reverse breakdown curve, diode operation is in high voltage, high current region when reversed, it is easy to burn out.It is integrated for SOI power
Circuit, using two-way SCR ESD protective device, it is reversed to promote SCR device for disadvantage that can be weaker to avoid reverse protection ability
ESD protective capability.
In short, according to bidirectional triode thyristor ESD-protection structure and soi structure, including substrate P, and setting is in P lining
The first N-doped zone, P-doped zone, the second N-doped zone, the first p-type heavily doped region, the first N-type heavily doped region in bottom,
Second N-type heavily doped region, third N-type heavily doped region, the 4th N-type heavily doped region, the second p-type heavily doped region, the first extraction electrode,
Second extraction electrode and gate oxide have been set gradually from left to right the first N-doped zone, P-doped zone and in substrate P
Two N-doped zones have been set gradually from left to right the first p-type heavily doped region, the first N-type heavy doping in the first N-doped zone
Area and the second N-type heavily doped region, and, the second N-type heavily doped region is located at the intersection of the first N-doped zone and P-doped zone,
It is heavily doped that third N-type heavily doped region, the 4th N-type heavily doped region and the second p-type have been set gradually from left to right in second N-doped zone
Miscellaneous area, and, third N-type heavily doped region is located at the intersection of P-doped zone and the second N-doped zone, and gate oxide is covered on p-type
Distinguish the one end on the surface of doped region and between the second N-type heavily doped region and third N-type heavily doped region, the first extraction electrode
Connect with the first p-type heavily doped region and the first N-type heavily doped region, one end of the second extraction electrode respectively with the 4th N-type heavy doping
Area is connected with the second p-type heavily doped region, is SCR2, the road of SCR2 from the path SCR of the first extraction electrode to the second extraction electrode
Diameter is first the-the first N-doped zone of p-type heavily doped region-the-the four N-type heavily doped region of the-the second N-doped zone of P-doped zone,
SCR2 constitutes forward direction ESD electric current.It is SCR1 from the path SCR of the second extraction electrode to the first extraction electrode, the path of SCR1 is
Second the-the second N-doped zone of p-type heavily doped region-P-doped zone the-the first N-doped zone the-the first N-type heavily doped region, SCR1 structure
It releases path at reversed ESD electric current.To form the bi-directional ESD based on SCR by SCR1 and SCR2, avoid reversed guarantor
The case where electric leakage occurred when shield.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of bidirectional triode thyristor ESD-protection structure, which is characterized in that including substrate P, and be arranged in the substrate P
In the first N-doped zone, P-doped zone, the second N-doped zone, the first p-type heavily doped region, the first N-type heavily doped region,
Two N-type heavily doped regions, third N-type heavily doped region, the 4th N-type heavily doped region, the second p-type heavily doped region, the first extraction electrode,
Two extraction electrodes and gate oxide；
First N-doped zone, the P-doped zone and the 2nd N have been set gradually from left to right in the substrate P
Type doped region；
The first p-type heavily doped region, the first N-type weight have been set gradually from left to right in first N-doped zone
Doped region and the second N-type heavily doped region, and, the second N-type heavily doped region is located at first N-doped zone and described
The intersection of P-doped zone；
The third N-type heavily doped region, the 4th N-type weight have been set gradually from left to right in second N-doped zone
Doped region and the second p-type heavily doped region, and, the third N-type heavily doped region is located at the P-doped zone and described second
The intersection of N-doped zone；
The gate oxide is covered on the surface of the P-doped zone and is located at the second N-type heavily doped region and the 3rd N
Between type heavily doped region；
One end of first extraction electrode is connect with the first p-type heavily doped region and the first N-type heavily doped region respectively,
One end of second extraction electrode is connect with the 4th N-type heavily doped region and the second p-type heavily doped region respectively；
Wherein, it is mixed by the first p-type heavily doped region, first N-doped zone, the P-doped zone, second N-type
Miscellaneous area and the 4th N-type heavily doped region constitute forward current, by the second p-type heavily doped region, second N-doped zone, institute
It states P-doped zone, first N-doped zone and the first N-type heavily doped region and constitutes reverse current, to be formed two-way
ESD。
2. bidirectional triode thyristor ESD-protection structure as described in claim 1, which is characterized in that the length of the gate oxide
Degree is 0.18-2um.
3. bidirectional triode thyristor ESD-protection structure as described in claim 1, which is characterized in that the P-doped zone
Width is 2-6um, and the ion concentration of the P-doped zone is 1e15-1e18.
4. bidirectional triode thyristor ESD-protection structure as described in claim 1, which is characterized in that first N-type is heavily doped
The ion concentration of miscellaneous area and the second N-type heavily doped region is 1e15-1e18.
5. bidirectional triode thyristor ESD-protection structure as described in claim 1, which is characterized in that first N-type is heavily doped
Miscellaneous area, the second N-type heavily doped region, the third N-type heavily doped region, the 4th N-type heavily doped region, first p-type
The ion concentration of heavily doped region and the second p-type heavily doped region is 1e19-1e20.
6. bidirectional triode thyristor ESD-protection structure as described in claim 1, which is characterized in that the thickness of the substrate P
For 300-500um.
7. a kind of soi structure, which is characterized in that including any in buried oxide, silicon substrate, isolated area and such as claim 1-6
Bidirectional triode thyristor ESD-protection structure described in claim；
The buried oxide setting is on the silicon substrate；
The bidirectional triode thyristor ESD-protection structure is arranged in the buried oxide；
The isolated area is arranged in the buried oxide, and is located at the two of the bidirectional triode thyristor ESD-protection structure
Side.
8. the as claimed in claim 7 soi structure, which is characterized in that the buried oxide with a thickness of 1-3um.
9. the soi structure as claimed in claim 7, which is characterized in that the isolated area is deep trench isolation area.
10. the as claimed in claim 7 soi structure, which is characterized in that the isolated area with a thickness of 1-3um.
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| CN103413807A (en) * | 2013-07-15 | 2013-11-27 | 常州子睦半导体有限公司 | Low-capacitance unidirectional transient voltage suppressor |
| CN105374815A (en) * | 2015-12-10 | 2016-03-02 | 湖南静芯微电子技术有限公司 | Bidirectional transient voltage suppression device |
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