CN109926566A - A kind of metal deposition of combination microelectron-mechanical and casting - Google Patents
A kind of metal deposition of combination microelectron-mechanical and casting Download PDFInfo
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- CN109926566A CN109926566A CN201910267159.2A CN201910267159A CN109926566A CN 109926566 A CN109926566 A CN 109926566A CN 201910267159 A CN201910267159 A CN 201910267159A CN 109926566 A CN109926566 A CN 109926566A
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- cover plate
- hole slot
- slot structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D17/00—Pressure die casting or injection die casting, i.e. casting in which the metal is forced into a mould under high pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D18/00—Pressure casting; Vacuum casting
- B22D18/04—Low pressure casting, i.e. making use of pressures up to a few bars to fill the mould
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D18/00—Pressure casting; Vacuum casting
- B22D18/06—Vacuum casting, i.e. making use of vacuum to fill the mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses the metal depositions of a kind of combination microelectron-mechanical and casting, comprising: S1 provides silicon micro-mould, is provided with hole slot structure on the silicon micro-mould；S2, the silicon micro-mould that needs are filled are clipped between upper cover plate and lower cover plate, form a sandwich structure, and the nozzle bore on the lower cover plate is corresponding with the hole slot structure vertical；S3, the liquid metal that filled high-temperature melts in the hole slot structure；The liquid metal of the hole slot structure and the nozzle bore is cut and is separated by S4；S5, the liquid metal in the uniform curing hole slot structure；S6 separates the upper cover plate and the lower cover plate with the silicon micro-mould.Emerging MEMS technology in conjunction with the foundry engieering for having thousands of years of history, is created a completely new metal deposition to microelectronic field by the present invention.
Description
Technical field
The invention belongs to semiconductor or field of microelectronic fabrication more particularly to a kind of combination microelectron-mechanical and castings
Metal deposition.
Background technique
Thick metal layers currently without stringent definition, general thickness in 1um hereinafter, can with evaporation or sputtering,
When several microns to dozens or even hundreds of micron, need using plating.
Thick metal layers have a wide range of applications in microelectronic component, in advanced encapsulation field, such as in flip-chip,
The salient point Bumping used, or the TSV (Through-silicon via) and TGV (Through that are used in via interconnection
Glass via), filter construction is used in integrated passive devices, delayer etc. is thick metal structure, is led in MEMS device
Domain, the structures such as spiral type inductance.
The deposition of thickness metal relies primarily on plating and realizes at present.Plating filling is segmented into four steps, and the first step is seed layer
Deposition, general by the way of sputtering or evaporation, seed layer thickness is generally less than 1 micron.Second step is led in electroplate liquid
The mode for crossing extra show carries out electroplating deposition.Electroplating process is an extremely complex electrochemical process, the uniformity of plating and at
Product rate and field distribution, inhibitor in the proportion and electrolyte of electrolyte, the concentration of accelerator etc. are related.It is completed in filling
Afterwards, if it is the filling of via interconnection, because seed layer has in hole with surface, can all there be gold on hole and surface when being electroplated
Belong to electroplating deposition, the metal plating on surface needs to remove by way of third step chemical mechanical grinding (CMP).4th step is
Seed layer.In some regions of the surface of plating because not needing to be electroplated, glue or other non-conductive materials can be used before plating
Material is covered.After the completion of plating, covers and cover following seed layer and be also required to remove.
There is following defects for plating:
1. it is complicated that fill process process is electroplated, because plating needs to realize in conductive surface, for silicon wafer, sheet glass
Equal materials need to be previously deposited seed layer, and seed layer is also needed after the completion of filling；
2. the electroplate liquid used, which is electroplated, very strong toxic, it is easy to stain environment, with the rise of environmental consciousness, now
Government is more and more tighter to plating production control；
3. the filling speed of plating is simultaneously unhappy, especially filled for via hole, it usually needs several or even dozens of hour.
In addition to plating, chemical plating is also the method for one thick metal deposit.But chemical plating precision is difficult to control, to material
There is higher selectivity.
The mankind have thousands of years of history using casting, and metal casting is a kind of widely used metal manufacture, people
Class is had more than 5000 years using the history of casting.The basic principle of casting is to inject prefabricated mould after melting metal or alloy
In, mould casting is taken out in demoulding after cured.MEMS technology can and casting combination, originate from their common points: both
It is mechanical part manufacturing technology, difference is on scale that there are several orders of magnitude.Relative to other machining process, such as
Vehicle is washed, throw etc., the strong point of casting is the mechanical part of plastic labyrinth.And MEMS technology is recent decades from micro- electricity
The micro-processing technology that developed in sub- technology.By the machinery for producing micro-meter scale on silicon wafer or other substrates
Component, to realize sensing, energy acquisition, the functions such as execution.The basic conception that MEMS is combined with casting is by body silicon etching work
Skill produces on silicon wafer (or other materials substrate) needs molding micro-mould, then injects metal molten and fills and consolidate
Chemical conversion type.
Emerging MEMS technology is created into a Xiang Quan to microelectronic field in conjunction with the foundry engieering for there are thousands of years of history
New metal deposition, but this combines and faces huge technological challenge.It is existing to ask firstly, for the casting of macroscopic view
Topic be cast-internal be easy to produce bubble perhaps these bubbles of cavity or cavity size can achieve a millimeter rank,
The size of remote super MEMS structure.Secondly, casting is commonly used in mechanical part rather than the manufacture of electronic component, MEMS casting is in electricity
The requirement that can aspect of performance meet device is also required to study.Finally, the combination of MEMS and casting, not only by the mould of macroscopic view
The silicon micro-mould that tool changes body silicon etching into is so simple, because casting dimension reduces several order of magnitude bring skin effects and temperature
Effect etc. is spent, in the manufacture of silicon micro-mould, is molded, the micro-fluidic filling of molten alloy, the volume contraction problem in solidification process
And demoulding etc. can not be using the solution of macroscopic view casting.Relevant micro-nano effect is only introduced, could really be anticipated
The combination of MEMS and casting are realized in justice.
Summary of the invention
Of the existing technology in order to solve the problems, such as, the invention proposes the metals of a kind of combination microelectron-mechanical and casting
Deposition method.
The technical scheme adopted by the invention is that:
A kind of metal deposition of combination microelectron-mechanical and casting, comprising:
S1 provides silicon micro-mould, is provided with hole slot structure on the silicon micro-mould；
S2, the silicon micro-mould that needs are filled are clipped between upper cover plate and lower cover plate, form a sandwich structure,
Nozzle bore on the lower cover plate is corresponding with the hole slot structure vertical；
S3, the liquid metal that filled high-temperature melts in the hole slot structure；
The liquid metal of the hole slot structure and the nozzle bore is cut and is separated by S4；
S5, the liquid metal being quickly cooled down in the uniform curing hole slot structure；
S6 separates the upper cover plate and the lower cover plate with the silicon micro-mould.
Preferably, after step S6 further include:
S7 carries out chemical mechanical grinding to the silicon micro-mould.
Preferably, there are between ventilation between the lower cover plate and/or the upper cover plate and the silicon micro-mould in step S2
Gap.
Preferably, the lower cover plate and/or the upper cover plate surface are equipped with the salient point or item for forming the airspace
Shape slot.
Preferably, entire sandwich structure to be placed on to the liquid metal pool surface of molten condition in step S3.
Preferably, assuming the nozzle bore, the air pressure of connected space is P in the hole slot structure and airspacei, metal
The pressure of pool surface is P0, pressure differential Δ p=P0-Pi, then: in step S3, making liquid metal logical by increasing pressure differential Δ p
The nozzle bore is crossed to be packed into the hole slot structure.
Preferably, cutting the liquid metal in the nozzle bore by reducing pressure differential Δ p in step S4.
Preferably, vacuumizing in step S3 to the hole slot structure, liquid metal is under external gas pressure from the spray
It is filled into nozzle aperture in the hole slot structure in vacuum environment.
Preferably, blowing cold air to the upper cover plate for being exposed to outside in step S5.
Preferably, when for low-temperature alloy, on the surface of upper cover plate and lower cover plate, deposition can be reduced its surface in step S6
The nano molecular layer material of energy；When for high temperature alloy, one layer of release materials are deposited in upper cover plate and lower cover plate surface.
Compared with prior art, the beneficial effects of the present invention are:
The present invention realizes the combination of microelectron-mechanical and casting, provides a kind of completely new metal layer to thick metal deposit
Product method realizes filling of the liquid metal in hole slot structure, the skill by nozzle bore using capillary phenomenon and liquid bridge pinch off phenomenon
Art avoids the techniques such as seed layer deposition required for common electroplating filling method and chemical mechanical grinding, passes through fast quickly cooling
But it improves the forming core number in solidification process, achievees the effect that uniform curing.
Certainly, it implements any of the products of the present invention and does not necessarily require achieving all the advantages described above at the same time.
Detailed description of the invention
Fig. 1 is microelectron-mechanical of the invention and the thick metal deposition process flow chart that casting combines；
Fig. 2 is the fill method structural schematic diagram of one embodiment of the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to each reality of the invention
The mode of applying is explained in detail.
Please comprehensive reference Fig. 1 and Fig. 2, a kind of metal deposition of combination microelectron-mechanical and casting, including following step
It is rapid:
S1 provides silicon micro-mould 1, hole slot structure 5 is provided on silicon micro-mould 1；
Silicon micro-mould 1 uses silicon body processing technology, there are mainly two types of: deep silicon etching and KOH etching.Wherein deep silicon etching can
To realize higher depth-to-width ratio.Figure is generally determined by photoetching, precision can control within 1 micron.
Compared with macroscopic view casting, silicon micro-mould 1 is also become flat other than mold is changed into silicon micro-mould 1 by the present invention
Shape.The thickness metal deposition can be by the size reduction of conventional cast to a few micrometers.
The type of hole slot structure 5 includes through-hole, blind hole and cavity body structure.Hole slot structure 5 in Fig. 1 is existed by multiple connections
Through-hole together is constituted, and the hole slot structure 5 in Fig. 2 is made of single through-hole.
Preferably, it is arranged on silicon micro-mould to 5 array of hole slot structure.
S2 is clipped in the silicon micro-mould 1 that needs are filled between upper cover plate 2 and lower cover plate 3, forms a sandwich structure,
Nozzle bore 4 on lower cover plate 3 is vertical corresponding with hole slot structure 5；
As shown in Fig. 2, multiple nozzle bores 4 are arranged on lower cover plate 3, multiple nozzle bores 4 and multiple hole slot structures 5 are vertical one by one
It is corresponding；Further, as shown in Figure 1, a nozzle bore 4, the inlet of through hole slot structure 5, metal are arranged on lower cover plate 3
Liquid flows into the through-hole of each interconnected through-silicon micro-mould 1.
There are airspaces 7 between lower cover plate 3 and/or upper cover plate 2 and silicon micro-mould 1.Since airspace 7 is enough
Small, liquid metal will not be overflowed from gap.
Optionally, lower cover plate 3 and/or 2 surface of upper cover plate are equipped with the salient point 8 or strip groove for forming airspace 7.
Optionally, upper cover plate 2 and lower cover plate 3 may each be silicon wafer or sheet glass.
S3, the liquid metal that filled high-temperature melts in hole slot structure 5；
Although the metal of high temperature melting flowed in the microflute of micro-meter scale filling be similar to it is micro-fluidic, because of alloy
Surface tension, the coefficient of viscosity, and with the factors such as the wellability of silicon micro-mould 1, compared to the aqueous solution in traditional microfluidic
It is different, so producing special flowing filling mechanism.
In one embodiment, entire sandwich structure is placed on to 6 surface of liquid metal pool of molten condition, makes liquid
Metal press-in hole slot structure 5.The advantage that the filling mode has speed fast, at low cost, thus it is very useful.
Assuming that the air pressure of connected space is P in nozzle bore 4, hole slot structure 5 and airspace 7i, the pressure on 6 surface of metal pool
Power is P0, then pressure differential Δ p=P0-Pi.Wherein, liquid metal is all not infiltrate for the surface of nozzle bore 4 and hole slot structure 5
's.In the step, by increasing pressure differential Δ p liquid metal is packed into hole slot structure 5 by nozzle bore 4.The increasing of Δ p
It greatly can be by reducing PiIt obtains.If working as PiWhen to drop to vacuum be zero, when Δ p is also not enough to overcome the capillary pressure of nozzle bore 4,
Then it is contemplated that increasing P0Value.
In another embodiment, device to hole slot structure 5 vacuumizes, and liquid metal is under external gas pressure from nozzle bore 4
In be filled into the hole slot structure 5 in vacuum environment.Since liquid metal can generate filling pressure when filling hole slot structure 5
Power needs to apply on upper cover plate 2 and lower cover plate 3 at this time certain pressure and clamps silicon micro-mould 1.
The liquid metal of hole slot structure 5 and nozzle bore 4 is cut and is separated by S4；
After liquid metal fills up hole slot structure 5 by nozzle bore 4, liquid metal and metal pool 6 in hole slot structure 5 are logical
Cross what nozzle bore 4 was connected.Liquid metal can form a liquid bridge in nozzle bore 4.Liquid bridge is that certain pressure is needed to maintain
, when the pressure of liquid bridge is lower than its fracture pressure, liquid bridge can be because of surface tension pinch off.
In one embodiment, by reducing pressure differential Δ p come the liquid metal in cutting nozzles hole 4, and the reduction of Δ p
It can be by increasing PiAnd/or reduce P0It obtains.Step S3 and 5 filling liquid metal of step S4 mesoporous slot structure and liquid gold
Category in the cutting separation (liquid bridge pinch off) of nozzle bore 4 is realized based on surface tension huge on micro-meter scale.
It in another embodiment, at this time can be by reducing liquid metal since hole slot structure 5 is under vacuum environment
Stuffing pressure realize liquid bridge pinch off effect, i.e., the liquid metal in hole slot structure 5 and nozzle bore 4 is subjected to cutting separation.
S5, the liquid metal in uniform curing hole slot structure 5；
Most metals are in the solidification process from liquid phase to solid phase, and volume can undergo a contraction, and shrinkage about exists
Between 2%~7%.In the macroscopic view casting, the problem of volume contraction, is realized by the mode of compensation.Pass through control casting
It cools down from the bottom up, the metal at the riser of top finally melts, and can always compensate in cooling procedure so below
Alloy cure shrinkage.But in the present embodiment, because the flat structure of wafer adds the highly thermally conductive property of silicon materials itself, compensation
The temperature gradient needed cannot achieve.
In the step, the forming core number in solidification process is improved preferably by way of rapid cooling, to reach uniformly solid
The purpose of change.Specifically, it can be and upper cover plate 2 be exposed to outside, and cold air is blown to upper cover plate 2 and is rapidly cooled, cold air
It can be liquefied low temperature nitrogen, herein with no restrictions.
S6 separates upper cover plate 2 and lower cover plate 3 with silicon micro-mould 1；
Because alloy is filled after melting, it is easy to appear upper cover plate 2 after solidification and lower cover plate 3 clings nothing by alloy
The case where method separates.For low-temperature alloy, the present embodiment is preferably by depositing extraordinary nano molecular layer material on the surface of cover board
To reduce its surface energy, to realize easily fragment.For high temperature alloy, because nano molecular layer can decompose at high temperature,
The present embodiment preferably deposits one layer of release materials in upper cover plate 2 and 3 surface of lower cover plate with physics or the mode of chemical deposition, with
Assisted demoulding.
S7 carries out chemical mechanical grinding to silicon micro-mould 1.
Step S7 is not required step.According to the actual situation, it may need to carry out chemical mechanical grinding (CMP) after demoulding
Planarizing, or the mode of thin layer plating is carried out in cast(ing) surface to reach certain concrete application requirements.
Thickness metal deposition provided by the invention can be applied to following three microelectronic fields: 1) the advanced envelope of semiconductor
The silicon via interconnection TSV/ glass via interconnection TGV of dress；2) MEMS device, such as MEMS fluxgate, electromagnetic energy harvester
Deng；3) three-dimensional stacked microwave components and integrated passive devices IPD.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with scope of protection of the claims
Subject to.
Claims (10)
1. a kind of metal deposition of combination microelectron-mechanical and casting characterized by comprising
S1 provides silicon micro-mould, is provided with hole slot structure on the silicon micro-mould；
S2, the silicon micro-mould that needs are filled are clipped between upper cover plate and lower cover plate, form a sandwich structure, described
Nozzle bore on lower cover plate is corresponding with the hole slot structure vertical；
S3, the liquid metal that filled high-temperature melts in the hole slot structure；
The liquid metal of the hole slot structure and the nozzle bore is cut and is separated by S4；
S5, the liquid metal in the uniform curing hole slot structure；
S6 separates the upper cover plate and the lower cover plate with the silicon micro-mould.
2. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 1, which is characterized in that
After step S6 further include:
S7 carries out chemical mechanical grinding to the silicon micro-mould.
3. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 1, which is characterized in that step
In rapid S2, there are airspaces between the lower cover plate and/or the upper cover plate and the silicon micro-mould.
4. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 3, which is characterized in that institute
It states lower cover plate and/or the upper cover plate surface is equipped with the salient point or strip groove for forming the airspace.
5. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 3, which is characterized in that step
In rapid S3, entire sandwich structure is placed on to the liquid metal pool surface of molten condition.
6. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 5, which is characterized in that false
If the air pressure of connected space is P in the nozzle bore, the hole slot structure and airspacei, the pressure of metal pool surface is P0,
Pressure differential Δ p=P0-Pi, then: in step S3, by increasing pressure differential Δ p liquid metal being packed by the nozzle bore
In the hole slot structure.
7. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 6, which is characterized in that step
In rapid S4, the liquid metal in the nozzle bore is cut by reducing pressure differential Δ p.
8. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 1, which is characterized in that step
In rapid S3, the hole slot structure is vacuumized, liquid metal is under external gas pressure from being filled into the nozzle bore
In in the hole slot structure of vacuum environment.
9. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 1, which is characterized in that step
In rapid S5, cold air is blown to the upper cover plate for being exposed to outside.
10. the metal deposition of a kind of combination microelectron-mechanical and casting according to claim 1, which is characterized in that
In step S6: when being directed to low-temperature alloy, on the surface of upper cover plate and lower cover plate, deposition can be reduced the nano molecular layer of its surface energy
Material；When for high temperature alloy, one layer of release materials are deposited in upper cover plate and lower cover plate surface.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910267159.2A CN109926566A (en) | 2019-04-03 | 2019-04-03 | A kind of metal deposition of combination microelectron-mechanical and casting |
| PCT/CN2019/082027 WO2020199236A1 (en) | 2019-04-03 | 2019-04-10 | Metal deposition method combining microelectromachinery and casting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910267159.2A CN109926566A (en) | 2019-04-03 | 2019-04-03 | A kind of metal deposition of combination microelectron-mechanical and casting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109926566A true CN109926566A (en) | 2019-06-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910267159.2A Pending CN109926566A (en) | 2019-04-03 | 2019-04-03 | A kind of metal deposition of combination microelectron-mechanical and casting |
Country Status (2)
| Country | Link |
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| CN (1) | CN109926566A (en) |
| WO (1) | WO2020199236A1 (en) |
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| CN114378261A (en) * | 2022-02-24 | 2022-04-22 | 德清县东旭合金钢铸造有限公司 | Casting process of bimetal alloy steel plate |
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| CN114378261B (en) * | 2022-02-24 | 2023-12-05 | 德清县东旭合金钢铸造有限公司 | Casting process of bimetal alloy steel plate |
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| Publication number | Publication date |
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| WO2020199236A1 (en) | 2020-10-08 |
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