CN109920784A - A kind of light-sensitive device - Google Patents
A kind of light-sensitive device Download PDFInfo
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- CN109920784A CN109920784A CN201910187578.5A CN201910187578A CN109920784A CN 109920784 A CN109920784 A CN 109920784A CN 201910187578 A CN201910187578 A CN 201910187578A CN 109920784 A CN109920784 A CN 109920784A
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- triode
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- sensitive device
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Abstract
The present invention relates to field of photoelectric technology, a kind of particularly light-sensitive device.The invention discloses a kind of light-sensitive devices, including photosensitive diode chip, triode and resistance, the photosensitive diode chip, resistance and triode are integrated in a chips, form integrated chip, the integrated chip package forms the light-sensitive device, the first end of the resistance and the base stage of triode connect, and the anode of the photosensitive diode chip connects the base stage of triode, the second end of the cathode connecting resistance of the photosensitive diode chip.The present invention both exportable biggish photoelectric current in turn, ensures that its response speed, and rear road no longer needs to amplify using discrete triode, and signal-to-noise ratio is high, and saves assembly space and processing charges.
Description
Technical field
The invention belongs to field of photoelectric technology, more particularly to a kind of light-sensitive device.
Background technique
Existing conventional photosensitive opto-electronic device mainly includes photodiode and photistor two types.Photosensitive two
Pole pipe is usually the silicon device of PIN NIP structure, is worked under backward voltage, and fast response time (ns grades), the linearity is good,
But sensitivity (i.e. photoelectric current) is very low, only microampere (μ A) grade, and rear road needs the vertical triode of bonus point to amplify, and leads to signal-to-noise ratio
It reduces.Photistor is generally NPN structure, and photoelectric current is higher, reaches mA grades, but response speed is slow (s grades of μ), and the linearity
Difference is generally only used as optoelectronic switch, exports 0,1 digital signal, is unable to satisfy the application scenarios of High Speed Analog amount output.
Summary of the invention
The purpose of the present invention is to provide a kind of both exportable biggish photoelectric currents, in turn, ensure that the photosensitive of its response speed
Device is above-mentioned to solve the problems, such as.
To achieve the above object, the technical solution adopted by the present invention are as follows: a kind of light-sensitive device, including photodiode core
Piece, triode and resistance, the photosensitive diode chip, resistance and triode are integrated in a chips, form integrated chip,
The integrated chip package forms the light-sensitive device, and the first end of the resistance and the base stage of triode connect, and described photosensitive two
The anode of pole pipe chip connects the base stage of triode, the second end of the cathode connecting resistance of the photosensitive diode chip.
Further, the electric current that the resistance value satisfaction of the resistance flows through the resistance makes triode be in pre- open state.
Further, which sets that there are three the emitters with the cathode of photosensitive diode chip, triode respectively
The pin or electrode being electrically connected with the collector of triode.
It further, further include lead frame, the integrated chip assembly is on the lead frames.
Further, the integrated chip is welded by conducting resinl or eutectic on the lead frames.
It further, further include package lens, the package lens are encapsulated in integrated chip.
It further, further include substrate, the integrated chip is assemblied on substrate.
Further, the integrated chip is welded by conducting resinl or eutectic and is fitted on substrate.
It further, further include package lens, the package lens are encapsulated in integrated chip.
Further, the resistance value of the resistance >=500k Ω.
Advantageous effects of the invention:
The present invention both exportable biggish photoelectric current (mA grades), in turn, ensures that its response speed, it is red to be more suitable for large scale
The application such as outer touch screen and remote recording, rear road no longer need to amplify using discrete triode, and signal-to-noise ratio is high, and saves dress
Patch processing cost with the discrete devices such as space and triode, resistance, is substantially improved the cost performance of product.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the integrated chip structural schematic diagram of the specific embodiment of the invention；
Fig. 2 is the structural schematic diagram at another visual angle of integrated chip of the specific embodiment of the invention；
Fig. 3 is the structural schematic diagram of the specific embodiment of the invention；
Fig. 4 is the circuit diagram of the specific embodiment of the invention；
Fig. 5 is the utilization circuit connection diagram of the specific embodiment of the invention.
Specific embodiment
To further illustrate that each embodiment, the present invention are provided with attached drawing.These attached drawings are that the invention discloses one of content
Point, mainly to illustrate embodiment, and the associated description of specification can be cooperated to explain the operation principles of embodiment.Cooperation ginseng
These contents are examined, those of ordinary skill in the art will be understood that other possible embodiments and advantages of the present invention.In figure
Component be not necessarily to scale, and similar component symbol is conventionally used to indicate similar component.
Now in conjunction with the drawings and specific embodiments, the present invention is further described.
As shown in Figs 1-4, a kind of light-sensitive device, including photosensitive diode chip PD1, triode Q1 and resistance R1, it is described
Photosensitive diode chip PD1, resistance R1 and triode Q1 are integrated in a chips, form integrated chip 1, the integrated chip
1 encapsulation forms the light-sensitive device, and the first end of the resistance R1 is connect with the base stage of triode Q1, the photosensitive diode chip
The anode of PD1 connects the base stage of triode Q1, the second end of the cathode connecting resistance R1 of the photosensitive diode chip PD1.
In this specific embodiment, is set in integrated chip 1 there are three electrode, the respectively pole N, the pole E and the pole C, be used for subsequent electricity
Connection, the pole N is electrically connected with the second end of the cathode of photosensitive diode chip PD1 and resistance R1, the pole E and the pole C respectively with triode
The emitter and collector of Q1 is electrically connected.Integrated chip 1 can be made of silicon chip of existing microelectronic processing technique, this
It is that those skilled in the art can realize easily, no longer describes in detail.
In this specific embodiment, triode Q1 is preferably NPN triode, but it is not limited to this, in other embodiments,
It is also possible to PNP triode.
It further include lead frame 2 in this specific embodiment, the integrated chip 1 is assemblied on lead frame 2, specifically,
The integrated chip 1 is welded by conducting resinl or eutectic to be fitted on 2 frame of lead frame, and concrete technology has been highly developed existing skill
Art is that those skilled in the art can realize that this is no longer described in detail easily.Certainly, in other embodiments, lead frame 2
Substrate etc. can be substituted for.
In this specific embodiment, set on lead frame 2 there are three electrode (or pin) 21,22 and 23, electrode 21 uses key
Alloy wire 3 is electrically connected by gold wire bonding technique with the pole N of integrated chip 1, and electrode 22 is by conducting resinl or eutectic weldering and integrates
The pole C of chip 1 is electrically connected, and the pole E of integrated chip 1 is electrically connected by gold wire bonding technique with electrode 23 using bonding gold wire 3, is had
Body technology has been the highly developed prior art, is that those skilled in the art can realize that this is no longer described in detail easily.
Certainly, in other embodiments, the connection side between three electrodes 21,22 and 23 and the electrode of integrated chip 1
Formula can be selected according to actual needs, this is that those skilled in the art can realize easily, no longer be described in detail.
It further include package lens (not shown) in this specific embodiment, the package lens are encapsulated in integrated chip 1
On, package lens can be the shapes such as spherical shape, elliposoidal, to realize required optical effect.Package lens use packaging plastic (such as
Potting resin) it is packaged to be formed, specific encapsulation technology has been highly developed technology, is referred to the prior art, this is no longer
It describes in detail.
In this specific embodiment, resistance R1 preferably >=500k Ω, using the biggish resistance of resistance value, this circuit can provide one
Low current makes triode Q1 remain pre- open state, its opening speed (reaching ns grades) can be substantially improved, certainly, at it
In its embodiment, the resistance value of resistance R1 can be selected according to the actual situation, as long as the electric current that satisfaction flows through resistance R1 makes three
Pole pipe Q1 remains pre- open state, this is that those skilled in the art can realize easily, no longer describes in detail.If resistance
The resistance value of R1 is too small, this circuit offer electric current is just larger, keeps triode Q1 in the open state, cannot achieve low level defeated
Out.
When work, as shown in figure 5, the electrode 21 (pole N) of light-sensitive device is connected with signal source CSO, electrode 22 connects power supply
Vcc, 23 series resistance R of electrodeLGround connection, electrode 23 and resistance RLBetween node be output end vo ut, due to photodiode
PD1 has enough light-receiving areas, therefore has good response linearity；Generated photoelectricity flows through triode Q1 amplification,
Exportable biggish response photoelectric current (mA grades)；The circuit of the resistance R1 in parallel with photodiode PD1 can provide a small electricity
Stream, makes triode Q1 remain pre- open state, its opening speed (up to ns grades) can be substantially improved, both may be used to realize
Biggish photoelectric current is exported, in turn, ensures that its response speed, is more suitable for large scale infrared touch panel and remote recording etc.
Using, and triode Q1 is integrated in the devices, rear road no longer needs to amplify using discrete triode, and connection line is shorter, signal-to-noise ratio
Height, and the patch processing cost of the discrete devices such as assembly space and triode, resistance is saved, the sexual valence of product is substantially improved
Than.In addition, photosensitive diode chip PD1, resistance R1 and triode Q1 are integrated in a chips, reliability is higher.
Although specifically showing and describing the present invention in conjunction with preferred embodiment, those skilled in the art should be bright
It is white, it is not departing from the spirit and scope of the present invention defined by the appended claims, it in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (10)
1. a kind of light-sensitive device, it is characterised in that: including photosensitive diode chip, triode and resistance, the photodiode
Chip, resistance and triode are integrated in a chips, form integrated chip, and the integrated chip package forms the photosensor
Part, the first end of the resistance and the base stage of triode connect, and the anode of the photosensitive diode chip connects the base stage of triode,
The second end of the cathode connecting resistance of the photosensitive diode chip.
2. light-sensitive device according to claim 1, it is characterised in that: the resistance value of the resistance meets the electricity for flowing through the resistance
Stream makes triode be in pre- open state.
3. light-sensitive device according to claim 1, it is characterised in that: the light-sensitive device set there are three respectively with photosensitive two pole
The pin or electrode of the collector electrical connection of the cathode of tube chip, the emitter of triode and triode.
4. light-sensitive device according to claim 1 or 2 or 3, it is characterised in that: it further include lead frame, the integrated core
Piece is assemblied on lead frame.
5. light-sensitive device according to claim 4, it is characterised in that: the integrated chip is welded by conducting resinl or eutectic
With on the lead frames.
6. light-sensitive device according to claim 4, it is characterised in that: it further include package lens, the package lens encapsulation
In integrated chip.
7. light-sensitive device according to claim 1 or 2 or 3, it is characterised in that: it further include substrate, the integrated chip dress
It fits on substrate.
8. light-sensitive device according to claim 7, it is characterised in that: the integrated chip is welded by conducting resinl or eutectic
It fits on substrate.
9. light-sensitive device according to claim 7, it is characterised in that: it further include package lens, the package lens encapsulation
In integrated chip.
10. light-sensitive device according to claim 1 or 2 or 3, it is characterised in that: the resistance value of the resistance >=500k Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910187578.5A CN109920784A (en) | 2019-03-13 | 2019-03-13 | A kind of light-sensitive device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910187578.5A CN109920784A (en) | 2019-03-13 | 2019-03-13 | A kind of light-sensitive device |
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| Publication Number | Publication Date |
|---|---|
| CN109920784A true CN109920784A (en) | 2019-06-21 |
Family
ID=66964581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910187578.5A Pending CN109920784A (en) | 2019-03-13 | 2019-03-13 | A kind of light-sensitive device |
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| CN (1) | CN109920784A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141887A (en) * | 2021-11-22 | 2022-03-04 | 纽威仕微电子（无锡）有限公司 | Photoelectric conversion circuit packaging process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205139878U (en) * | 2015-11-23 | 2016-04-06 | 广州华欣电子科技有限公司 | Infrared touch -screen receiving circuit |
| CN106571375A (en) * | 2016-10-27 | 2017-04-19 | 南京紫科光电科技有限公司 | Silicon-based APD integrated circuit |
| CN207559999U (en) * | 2017-12-27 | 2018-06-29 | 深圳市国电科技通信有限公司 | A kind of converged communication device of combination visible light communication |
-
2019
- 2019-03-13 CN CN201910187578.5A patent/CN109920784A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205139878U (en) * | 2015-11-23 | 2016-04-06 | 广州华欣电子科技有限公司 | Infrared touch -screen receiving circuit |
| CN106571375A (en) * | 2016-10-27 | 2017-04-19 | 南京紫科光电科技有限公司 | Silicon-based APD integrated circuit |
| CN207559999U (en) * | 2017-12-27 | 2018-06-29 | 深圳市国电科技通信有限公司 | A kind of converged communication device of combination visible light communication |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141887A (en) * | 2021-11-22 | 2022-03-04 | 纽威仕微电子（无锡）有限公司 | Photoelectric conversion circuit packaging process |
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Application publication date: 20190621 |
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