CN112635453A - Photoelectric detector structure - Google Patents
Photoelectric detector structure Download PDFInfo
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- CN112635453A CN112635453A CN202011550477.9A CN202011550477A CN112635453A CN 112635453 A CN112635453 A CN 112635453A CN 202011550477 A CN202011550477 A CN 202011550477A CN 112635453 A CN112635453 A CN 112635453A
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- photoelectric detector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Abstract
The invention discloses a photoelectric detector structure which comprises a photoelectric detector, a transistor amplifier, a substrate and electrodes, wherein the photoelectric detector and the transistor amplifier are integrated on the substrate, and the electrodes are arranged on the photoelectric detector and the transistor amplifier. The invention can increase the optical response performance of the detector and reduce the parasitic parameters of the device.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to a photoelectric detector structure.
Background
The photoelectric detector is a device for converting optical signals into electric signals to be output, and is an indispensable key component in the fields of optical fiber communication, image sensors, visible light transmission, optical chip interconnection integration and the like. Currently, commonly used photodetectors are classified by structure: PIN type photodiodes, avalanche diodes (APDs), metal-semiconductor-metal (MSM) diodes, superlattice avalanche diodes (SAPDs), waveguide type photodetectors (WPDs), Resonant Cavity Enhanced Photodetectors (RCEPDs), and the like. Currently, commonly used detector types include PIN type, APD type, and MSM type photodetectors, in which the PIN type and APD type belong to ohmic contact type, and the MSM type belongs to schottky contact type. The PIN type diode photoelectric detector is the mainstream detector at present, has simple structure and less preparation process, is beneficial to large-scale production, but has relatively low sensitivity, can not carry out remote communication and has lower response bandwidth. The APD type detector is a photodiode which provides large current gain by utilizing an avalanche effect, has the advantages of high sensitivity and small dark current, but has high working bias, large background noise, complex structure and more preparation flows. The MSM type detector is a device which utilizes a Schottky barrier of a metal-semiconductor-metal contact structure and generates a pulled-through internal electric field by external bias voltage to collect photon-generated carriers and generate photocurrent response.
The detectors inevitably encounter weak photocurrent during working, and need to be externally connected with an additional driving circuit to provide bias voltage, current amplification, current signal filtering and other functions to realize stable work of the device, but the inherent resistance-capacitance characteristics of the externally connected devices can increase the RC constant of a detector system, so that the signal current of the device can be influenced, the bandwidth of the device can also be influenced, and certain influence is brought to the photoresponse performance of the detectors.
Disclosure of Invention
In order to solve various problems existing in the practical application process of mainstream photoelectric detector structure design, the invention provides a photoelectric detector structure. In particular to a detection device structure integrating a transistor amplifier and a photoelectric detector compatible with a CMOS process.
The invention adopts the following technical scheme:
a photoelectric detector structure comprises a photoelectric detector, a transistor amplifier, a substrate and electrodes, wherein the photoelectric detector and the transistor amplifier are integrated on the substrate, and the electrodes are arranged on the photoelectric detector and the transistor amplifier.
Further, the photodetector and the transistor amplifier are integrated on the substrate using a CMOS process.
Further, the photodetector is of a PIN type, an APD type, or an MSM type.
Further, the transistor amplifier is an integrated operational amplifier composed of a CMOS, a BJT, or a single CMOS transistor.
Further, the electrode includes Au, Cu, Ag, or polysilicon.
The invention has the beneficial effects that:
the photoelectric detector has a simple and stable structure, can integrate a complex driving circuit, improves the photoelectric response signal quality of the detector, and avoids the influence of an external driving circuit on the detector.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a circuit schematic of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited to these examples.
Examples
As shown in fig. 1 and 2, a photodetector structure includes a photodetector 01, a transistor amplifier 02, a substrate 03, and an electrode 04, wherein the photodetector and the transistor amplifier are directly integrated on a substrate by common CMOS fabrication processes such as epitaxy, etching, and ion implantation, and the photodetector and the transistor amplifier are integrated on a substrate by the same process, thereby ensuring the symmetry of device parameters, and reducing the influence of temperature drift and other factors on the device performance. The photocurrent generated by the photoelectric detector under illumination directly passes through the transistor amplifier to obtain an amplified photocurrent signal, which is helpful for improving the photoresponse performance of the detector.
The substrate material may be a substrate commonly used in CMOS processes, such as a Si substrate, a silicon/germanium (SOI/GeOI) substrate with a buried insulating layer, or the like.
The photoelectric detector is of other detector structures such as PIN type, APD type MSM type and the like based on the structural type change of the three devices. The material used by the detector can be the fourth main group semiconductor material Si and Ge which are commonly used In the prior art, and can also be the third five group semiconductor material GaAs, InP, GaP, GaN and InxGa1-xN、ZnO、MoS2AlN, and materials with the excitation wavelength covering wave bands including middle and far infrared wave bands, near infrared wave bands, visible light wave bands, ultraviolet wave bands and deep ultraviolet wave bands.
The transistor amplifier can be an integrated operational amplifier composed of triodes with current and voltage amplification functions such as CMOS, BJT or single MOS tube, or an amplifier composed of other composite transistors.
The electrode is metal commonly used in CMOS process, such as Au, Cu, Ag and other metals, or polysilicon (Poly-Si).
Furthermore, a resistance element used for realizing the amplification function of the related circuit between the photoelectric detector and the transistor amplifier is directly integrated on the same substrate.
As shown in fig. 2, compared with the prior art, the present invention can omit passive devices such as external resistor, capacitor, inductor, etc., reduce the intrinsic parasitic parameters of the receiver system of the detector and the amplifier, and currently, the receiver system is formed by combining a plurality of discrete devices, each of which is a detector and an amplifier.
The photoelectric detector designed by the idea has the advantages of simple structure, high reliability, compatible manufacturing process with the existing mature CMOS process and small influence on the core structure of the detector; the influence of a peripheral driving circuit on a detector RC constant can be reduced by adopting a device structure formed by integrating the transistor amplifier and the photoelectric detector, and the loss of a photocurrent signal generated by the circuit can be ignored due to the integration and direct interconnection among the devices. The detector with the structure can be compatible with the mature CMOS process at present, so that the detector can be conveniently integrated with a more complex and powerful drive circuit, the overall performance of the device is enhanced, and the miniaturization development of a detector module is promoted.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (5)
1. A photoelectric detector structure is characterized by comprising a photoelectric detector, a transistor amplifier, a substrate and electrodes, wherein the photoelectric detector and the transistor amplifier are integrated on the substrate, and the electrodes are arranged on the photoelectric detector and the transistor amplifier.
2. A photodetector structure as claimed in claim 1, characterized in that the photodetector and the transistor amplifier are integrated on the substrate using CMOS technology.
3. A photodetector structure as claimed in claim 1, characterized in that the photodetector is of the PIN type, APD type or MSM type.
4. A photodetector structure as claimed in claim 1, characterized in that the transistor amplifier is an integrated operational amplifier formed by a CMOS, BJT or single CMOS transistor.
5. A photodetector structure as claimed in claim 1, characterized in that the electrodes comprise Au, Cu, Ag or polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011550477.9A CN112635453A (en) | 2020-12-24 | 2020-12-24 | Photoelectric detector structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011550477.9A CN112635453A (en) | 2020-12-24 | 2020-12-24 | Photoelectric detector structure |
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| Publication Number | Publication Date |
|---|---|
| CN112635453A true CN112635453A (en) | 2021-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011550477.9A Pending CN112635453A (en) | 2020-12-24 | 2020-12-24 | Photoelectric detector structure |
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| CN (1) | CN112635453A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113178498A (en) * | 2021-04-29 | 2021-07-27 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet detector and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020024058A1 (en) * | 2000-08-16 | 2002-02-28 | Marshall Gillian F. | Photodetector circuit |
| CN104900747A (en) * | 2015-06-24 | 2015-09-09 | 成都嘉石科技有限公司 | Photoelectric integrated device based on GaN, and preparing method and epitaxial structure thereof |
| CN108417590A (en) * | 2018-02-02 | 2018-08-17 | 天津大学 | NMOS type grid body interconnects photodetector and preparation method thereof |
| CN110676272A (en) * | 2019-09-18 | 2020-01-10 | 深圳第三代半导体研究院 | Semiconductor ultraviolet photoelectric detector |
| CN110943095A (en) * | 2018-09-21 | 2020-03-31 | 上海新微技术研发中心有限公司 | Silicon-based monolithic infrared pixel sensor and manufacturing method thereof |
-
2020
- 2020-12-24 CN CN202011550477.9A patent/CN112635453A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020024058A1 (en) * | 2000-08-16 | 2002-02-28 | Marshall Gillian F. | Photodetector circuit |
| CN104900747A (en) * | 2015-06-24 | 2015-09-09 | 成都嘉石科技有限公司 | Photoelectric integrated device based on GaN, and preparing method and epitaxial structure thereof |
| CN108417590A (en) * | 2018-02-02 | 2018-08-17 | 天津大学 | NMOS type grid body interconnects photodetector and preparation method thereof |
| CN110943095A (en) * | 2018-09-21 | 2020-03-31 | 上海新微技术研发中心有限公司 | Silicon-based monolithic infrared pixel sensor and manufacturing method thereof |
| CN110676272A (en) * | 2019-09-18 | 2020-01-10 | 深圳第三代半导体研究院 | Semiconductor ultraviolet photoelectric detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113178498A (en) * | 2021-04-29 | 2021-07-27 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet detector and preparation method thereof |
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