CN104900747A - Photoelectric integrated device based on GaN, and preparing method and epitaxial structure thereof - Google Patents
Photoelectric integrated device based on GaN, and preparing method and epitaxial structure thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title abstract description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 125
- 230000004888 barrier function Effects 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910002601 GaN Inorganic materials 0.000 claims description 155
- 230000005693 optoelectronics Effects 0.000 claims description 24
- 238000002955 isolation Methods 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 11
- 238000001465 metallisation Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910003465 moissanite Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 63
- 230000005622 photoelectricity Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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Abstract
The invention provides a photoelectric integrated device based on GaN, and a preparing method and an epitaxial structure thereof. The device comprises a substrate, a nucleating layer, a GaN channel layer, an AlGaN Schottky barrier layer which are successively laminated up and down. Two dimensional electronic gas is formed between the uppermost two layers. The Schottky barrier layer is provided with an isolating area which extends to the inner part of the GaN channel layer in an embedded manner. A device isolating layer, an N+-GaN layer, an i-AlGaN layer, a P-AlGaN layer and a P+-GaN layer are successively formed on the Schottky barrier layer of the side of the isolating area from up to down. An N type electrode is formed on the N+-GaN layer. A P type electrode is fromed on the P+-GaN layer. A gate electrode, a source electrode and a drain elelctrode are formed on the Schottky barrier layer of the other side. The N type electrode, the P type electrode, the source electrode and the drain electrode are respectively in contact with the layers thereof. According to the invention, integration between a PIN photoelectric detector and a GaN-based HEMT is realized.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of integrated optoelectronic device based on GaN and preparation method thereof, epitaxial structure.
Background technology
GaN (gallium nitride), as the Typical Representative of third generation semiconductor, has the features such as high power, high efficiency, elevated operating temperature, has been widely used in the every field such as electric power conversion, microwave communication.At present, the wireless sensing of deep space communication, long distance adopts microwave communication mode mostly.
GaN base PIN photoelectric detector has the following advantages: do not absorb visible ray, does not need filter system, detectable ultraviolet light; Do not need to make shallow junction, greatly can improve quantum efficiency; High temperature resistant, capability of resistance to radiation is strong, can normally work in extreme circumstances.Therefore, GaN base PIN photoelectric detector can be widely used in the fields such as interplanetary probe, fire alarm, sea leakage of oil detection, industrial temperature control, and these fields are the emphasis that people pay close attention to all the time.
In order to increase chip functions further, improving integrated level, simplifying system, reduce size and cost, adopt light integrated technology at present.Integrated and the photoelectricity of light light is integrated is two kinds of modes of light integrated technology.Light light is integrated take integrated optical circuit as representative, realizes optical modulator and optical switch etc. from being combined to of body structure with fiber waveguide form.Photoelectricity integrated finger photonic device and electronic device is all integrated obtains optoelectronic IC on the same substrate.The integrated relative difficulty of light light is less, and photoelectricity is integrated owing to relating to the series of problems such as structural compatibility, material compatibility, processing compatibility, is Research Challenges and emphasis always.And GaN base PIN photoelectric detector and GaN base HEMT (high power electronic migration transistor) are integrated, following wireless exploration technology path is made to become possibility: by PIN photoelectric detector as ultraviolet light detector, carry out the safety detections such as deep space probing, sea leakage of oil detection, industrial temperature control, fire alarm, gone out by antenna transmission, to transmit relevant information after finally signal being amplified by the GaN base HEMT that wafer scale is integrated.
But, although GaN is in fast development, be merely short 10 years, in addition the integrated difficulty of photoelectricity is larger, therefore, the research of current GaN base PIN photoelectric detector aspect is just risen, and needs badly and makes a breakthrough in the photoelectricity of GaN base PIN photoelectric detector and GaN base HEMT is integrated.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of integrated optoelectronic device based on GaN and preparation method thereof, epitaxial structure, and what can realize between GaN base PIN photoelectric detector and GaN base HEMT is integrated.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of integrated optoelectronic device based on GaN, comprising: substrate; Nucleating layer, described nucleating layer is formed over the substrate; GaN channel layer, described GaN channel layer is formed on described nucleating layer; AlGaN schottky barrier layer, described AlGaN schottky barrier layer is formed on described GaN channel layer, and forms two-dimensional electron gas between described AlGaN schottky barrier layer and described GaN channel layer; Isolated area, described isolated area embeds from the upper surface of described AlGaN schottky barrier layer and extends to described GaN channel layer inside; Wherein, the described AlGaN schottky barrier layer of described isolated area side is from bottom to top formed with device isolation layer, N successively
+-GaN layer, i-AlGaN layer, P-AlGaN layer and P
+-GaN layer, described N
+-GaN layer is formed with N-type electrode, described P
+-GaN layer is formed with P-type electrode, the described AlGaN schottky barrier layer of described isolated area opposite side is formed with gate electrode, source electrode and drain electrode, and described N-type electrode and described N
+between-GaN layer, described P-type electrode and described P
+between-GaN layer and described source electrode and all form ohmic contact between drain electrode and described AlGaN schottky barrier layer.
Preferably, the thickness of described substrate is 50 ~ 1000 microns, and described backing material is one or more in Si, SiC, GaN, Diamond and sapphire.
Preferably, the thickness of described nucleating layer is 10 ~ 500 nanometers, and described nucleating layer material is AlN and/or AlGaN.
Preferably, the thickness of described GaN channel layer is 1 ~ 3 micron, and described GaN channel layer and described nucleating layer form heterojunction.
Preferably, thickness 5 ~ 200 nanometer of described AlGaN schottky barrier layer, described AlGaN schottky barrier layer and described GaN channel layer form heterojunction, and in described AlGaN schottky barrier layer, the chemical formula of AlGaN is Al
xga
1-Xn, wherein, X is 0.1 ~ 0.5.
Preferably, the thickness of described device isolation layer is 20 ~ 1000 nanometers, and described device isolation layer material is nitride dielectric film.
Preferably, described N
+the thickness of-GaN layer is 500 ~ 1500 nanometers, and doping content is more than or equal to 1 × 10
17cm
-3; Described P
+the thickness of-GaN layer is less than or equal to 50 nanometers, and doping content is more than or equal to 1 × 10
18cm
-3.
Preferably, the thickness of described i-AlGaN layer is 100 ~ 1500 nanometers, and impurity concentration is less than or equal to 1 × 10
16cm
-3, and in described i-AlGaN layer, the chemical formula of AlGaN is Al
yga
1-Yn, wherein, Y is 0 ~ 1; The thickness of described P-AlGaN layer is 50 ~ 800 nanometers, and doping content is more than or equal to 1 × 10
17cm
-3, and in described P-AlGaN layer, the chemical formula of AlGaN is Al
zga
1-Zn, wherein, Z is 0.1 ~ 0.5.
For solving the problems of the technologies described above, another technical solution used in the present invention is: the epitaxial structure providing a kind of integrated optoelectronic device based on GaN, comprises the substrate, nucleating layer, GaN channel layer, AlGaN schottky barrier layer, device isolation layer, the N that are from bottom to top formed successively
+-GaN layer, i-AlGaN layer, P-AlGaN layer and P
+-GaN layer, wherein, forms two-dimensional electron gas between described AlGaN schottky barrier layer and described GaN channel layer.
For solving the problems of the technologies described above, another technical scheme that the present invention adopts is: provide a kind of according to any one the preparation method of the integrated optoelectronic device based on GaN above-mentioned, comprise the following steps: on substrate, be from bottom to top formed into stratum nucleare, GaN channel layer, AlGaN schottky barrier layer, device isolation layer, N successively
+-GaN layer, i-AlGaN layer, P-AlGaN layer and P
+-GaN layer, forms two-dimensional electron gas simultaneously between described AlGaN schottky barrier layer and described GaN channel layer; Adopt ion implantation or etching technics at described P
+-GaN layer forms isolated area, and described isolated area is from described P
+the upper surface of-GaN layer embeds and extends to described GaN channel layer inside; Adopt photoetching, etching, metal deposition or the P of stripping technology in described isolated area side
+-GaN layer forms P-type electrode, and makes described P-type electrode and described P by short annealing
+ohmic contact is formed between-GaN layer; Photoetching or etching technics is adopted to expose the described AlGaN schottky barrier layer of described isolated area opposite side and expose described N in described i-AlGaN layer both sides
+-GaN layer; Adopt photoetching, metal deposition or stripping technology at described N
+-GaN layer forms N-type electrode, and form source electrode and drain electrode in described AlGaN schottky barrier layer, and make described N-type electrode and described N by short annealing
+between-GaN layer and described source electrode and form ohmic contact between drain electrode and AlGaN schottky barrier layer; Adopt photoetching, metal deposition or form gate electrode between the source electrode of stripping technology in described AlGaN schottky barrier layer and drain electrode.
Be different from the situation of prior art, the invention has the beneficial effects as follows: by integrated GaN base PIN photoelectric detector and GaN base HEMT on the same substrate, and isolated by isolated area, thus it is integrated to realize between GaN base PIN photoelectric detector and GaN base HEMT, chip functions can be increased, improve integrated level, simplify system, reduce size and cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention based on the integrated optoelectronic device of GaN.
Fig. 2 ~ Fig. 6 is the preparation flow figure of the embodiment of the present invention based on the integrated optoelectronic device of GaN.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Referring to Fig. 1, is the structural representation of the embodiment of the present invention based on the integrated optoelectronic device of GaN.The integrated optoelectronic device based on GaN of the embodiment of the present invention comprises: substrate 10, nucleating layer 20, GaN channel layer 30, AlGaN schottky barrier layer 40, isolated area 50, device isolation layer 60, N
+-GaN layer 70, i-AlGaN layer 80, P-AlGaN layer 90 and P
+-GaN layer 100.
Nucleating layer 20 is formed over the substrate 10.GaN channel layer 30 is formed on nucleating layer 20.AlGaN schottky barrier layer 40 is formed on GaN channel layer 30, and forms two-dimensional electron gas 31 between AlGaN schottky barrier layer 40 and GaN channel layer 30.Isolated area 50 embeds from the upper surface of AlGaN schottky barrier layer 40 and extends to GaN channel layer 30 inside.Wherein, can adopt and inject ionic means injection ion formation isolated area 50 or adopt etching technics formation to etch isolated area 50, AlGaN schottky barrier layer 40 and two-dimensional electron gas 31 are isolated into two parts of mutually insulated by isolated area 50.
Wherein, the AlGaN schottky barrier layer 40 of isolated area 50 side is from bottom to top formed with device isolation layer 60, N successively
+-GaN layer 70, i-AlGaN layer 80, P-AlGaN layer 90 and P
+-GaN layer 100.N
+-GaN layer 70 is formed with N-type electrode 71, P
+-GaN layer 100 is formed with P-type electrode 101.The AlGaN schottky barrier layer 40 of isolated area 50 opposite side is formed with gate electrode 41, source electrode 42 and drain electrode 43, and N-type electrode 71 and N
+between-GaN layer 70, P-type electrode 101 and P
+between-GaN layer 100 and source electrode 42 and all form ohmic contact between drain electrode 43 and AlGaN schottky barrier layer 40.Wherein, N-type electrode 71 and P-type electrode 101 are two, and two N-type electrode 71 lay respectively at the N of i-AlGaN layer 80 both sides
+in-GaN layer 70.Source electrode 42 is between isolated area 50 and drain electrode 43, and gate electrode 41 is between source electrode 42 and drain electrode 43.
In the present embodiment, the thickness of substrate 10 is 50 ~ 1000 microns, and substrate 10 material is one or more in Si, SiC, GaN, Diamond and sapphire.Support based on substrate 10 Main Function.
The thickness of nucleating layer 20 is 10 ~ 500 nanometers, and nucleating layer 20 material is AlN and/or AlGaN.Nucleating layer 20 Main Function closes the defect from substrate 10, reduces substrate 10 to the impact of product.
The thickness of GaN channel layer 30 is 1 ~ 3 micron, and GaN channel layer 30 and nucleating layer 20 form heterojunction.
Thickness 5 ~ 200 nanometer of AlGaN schottky barrier layer 40, AlGaN schottky barrier layer 40 and GaN channel layer 30 form heterojunction, and in AlGaN schottky barrier layer 40, the chemical formula of AlGaN is Al
xga
1-Xn, wherein, X is 0.1 ~ 0.5.
The thickness of device isolation layer 60 is 20 ~ 1000 nanometers, and device isolation layer 60 material is nitride dielectric film, and nitride includes but not limited to AlN and SiN.That is, nitride can be the one in AlN, SiN, also can comprise two kinds simultaneously.
N
+the thickness of-GaN layer 70 is 500 ~ 1500 nanometers, and doping content is more than or equal to 1 × 10
17cm
-3; P
+the thickness of-GaN layer 100 is less than or equal to 50 nanometers, and doping content is more than or equal to 1 × 10
18cm
-3.
The thickness of i-AlGaN layer 80 is 100 ~ 1500 nanometers, and impurity concentration is less than or equal to 1 × 10
16cm
-3, and in i-AlGaN layer 80, the chemical formula of AlGaN is Al
yga
1-Yn, wherein, Y is 0 ~ 1; The thickness of P-AlGaN layer 90 is 50 ~ 800 nanometers, and doping content is more than or equal to 1 × 10
17cm
-3, and in P-AlGaN layer 90, the chemical formula of AlGaN is Al
zga
1-Zn, wherein, Z is 0.1 ~ 0.5.
The embodiment of the present invention also provides a kind of preparation method of the integrated optoelectronic device based on GaN, refers to Fig. 2 to Fig. 6, and this preparation method comprises the following steps:
S1: be from bottom to top formed into stratum nucleare 20, GaN channel layer 30, AlGaN schottky barrier layer 40, device isolation layer 60, N successively over the substrate 10
+-GaN layer 70, i-AlGaN layer 80, P-AlGaN layer 90 and P
+-GaN layer 100, forms two-dimensional electron gas 31 simultaneously between AlGaN schottky barrier layer 40 and GaN channel layer 30.
Wherein, substrate 10, nucleating layer 20, GaN channel layer 30, AlGaN schottky barrier layer 40, device isolation layer 60, N
+-GaN layer 70, i-AlGaN layer 80, P-AlGaN layer 90 and P
+the structure of-GaN layer 100 for stacking gradually, as shown in Figure 2.
The thickness of substrate 10 is 50 ~ 1000 microns, and substrate 10 material is one or more in Si, SiC, GaN, Diamond and sapphire.Support based on substrate 10 Main Function.
The thickness of nucleating layer 20 is 10 ~ 500 nanometers, and nucleating layer 20 material is AlN and/or AlGaN.Nucleating layer 20 Main Function closes the defect from substrate 10, reduces substrate 10 to the impact of product.
The thickness of GaN channel layer 30 is 1 ~ 3 micron, and GaN channel layer 30 and nucleating layer 20 form heterojunction.
Thickness 5 ~ 200 nanometer of AlGaN schottky barrier layer 40, AlGaN schottky barrier layer 40 and GaN channel layer 30 form heterojunction, and in AlGaN schottky barrier layer 40, the chemical formula of AlGaN is Al
xga
1-Xn, wherein, X is 0.1 ~ 0.5.
The thickness of device isolation layer 60 is 20 ~ 1000 nanometers, and device isolation layer 60 material is nitride dielectric film, and nitride includes but not limited to AlN and SiN.That is, nitride can be the one in AlN, SiN, also can comprise two kinds simultaneously.
N
+the thickness of-GaN layer 70 is 500 ~ 1500 nanometers, and doping content is more than or equal to 1 × 10
17cm
-3; P
+the thickness of-GaN layer 100 is less than or equal to 50 nanometers, and doping content is more than or equal to 1 × 10
18cm
-3.
The thickness of i-AlGaN layer 80 is 100 ~ 1500 nanometers, and impurity concentration is less than or equal to 1 × 10
16cm
-3, and in i-AlGaN layer 80, the chemical formula of AlGaN is Al
yga
1-Yn, wherein, Y is 0 ~ 1; The thickness of P-AlGaN layer 90 is 50 ~ 800 nanometers, and doping content is more than or equal to 1 × 10
17cm
-3, and in P-AlGaN layer 90, the chemical formula of AlGaN is Al
zga
1-Zn, wherein, Z is 0.1 ~ 0.5.
S2: adopt ion implantation or etching technics at P
+-GaN layer 100 is formed isolated area 50, isolated area 50 is from P
+the upper surface of-GaN layer 100 embeds and extends to GaN channel layer 30 inside.
Wherein, AlGaN schottky barrier layer 40 and two-dimensional electron gas 31 are isolated into two parts of mutually insulated by isolated area 50, as shown in Figure 3.
S3: adopt photoetching, etching, metal deposition or the P of stripping technology in isolated area 50 side
+-GaN layer 100 is formed P-type electrode 101, and make P-type electrode 101 and P by short annealing
+ohmic contact is formed between-GaN layer 100.
Wherein, P-type electrode 101 is two, is all positioned at the P of isolated area 50 side
+in-GaN layer 100, as shown in Figure 4.
S4: adopt photoetching or etching technics expose the AlGaN schottky barrier layer 40 of isolated area 50 opposite side and expose N in i-AlGaN layer 80 both sides
+-GaN layer 70.
Wherein, after photoetching or etching, device isolation layer 60, N
+-GaN layer 70, i-AlGaN layer 80, P-AlGaN layer 90 and P
+-GaN layer 100 is all positioned at the side of isolated area 50, and the opposite side of isolated area 50 only exposes AlGaN schottky barrier layer 40, as shown in Figure 5.
S5: adopt photoetching, metal deposition or stripping technology at N
+-GaN layer 70 is formed N-type electrode 71, and in AlGaN schottky barrier layer 40, form source electrode 42 and drain electrode 43, and make N-type electrode 71 and N by short annealing
+between-GaN layer 70 and source electrode 42 and form ohmic contact between drain electrode 43 and AlGaN schottky barrier layer 40.
Wherein, N-type electrode 71 is two, and two N-type electrode 71 lay respectively at the N of i-AlGaN layer 80 both sides
+in-GaN layer 70.Source electrode 42 between isolated area 50 and drain electrode 43, gate electrode 41 between source electrode 42 and drain electrode 43, as shown in Figure 6.
S6: adopt photoetching, metal deposition or form gate electrode 41 between the source electrode 42 of stripping technology in AlGaN schottky barrier layer 40 and drain electrode 43.
Wherein, after forming gate electrode 41, the integrated optoelectronic device based on GaN of previous embodiment is namely obtained, as shown in Figure 1.
The embodiment of the present invention also provides a kind of epitaxial structure of the integrated optoelectronic device based on GaN, and this epitaxial structure is step S1 products therefrom in embodiment of the present invention preparation method.This epitaxial structure comprises the substrate 10, nucleating layer 20, GaN channel layer 30, AlGaN schottky barrier layer 40, device isolation layer 60, the N that are from bottom to top formed successively
+-GaN layer 70, i-AlGaN layer 80, P-AlGaN layer 90 and P
+-GaN layer 100, wherein, forms two-dimensional electron gas 31 between AlGaN schottky barrier layer 40 and GaN channel layer 30.
By the way, the present invention has chip functions and enriches, and integrated level is high, and system simplifies, and size and low cost and other advantages, can be used for the aspects such as deep space probing, sea leakage of oil detection, industrial temperature control, fire alarm.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. based on an integrated optoelectronic device of GaN, it is characterized in that, comprising:
Substrate;
Nucleating layer, described nucleating layer is formed over the substrate;
GaN channel layer, described GaN channel layer is formed on described nucleating layer;
AlGaN schottky barrier layer, described AlGaN schottky barrier layer is formed on described GaN channel layer, and forms two-dimensional electron gas between described AlGaN schottky barrier layer and described GaN channel layer;
Isolated area, described isolated area embeds from the upper surface of described AlGaN schottky barrier layer and extends to described GaN channel layer inside;
Wherein, the described AlGaN schottky barrier layer of described isolated area side is from bottom to top formed with device isolation layer, N successively
+-GaN layer, i-AlGaN layer, P-AlGaN layer and P
+-GaN layer, described N
+-GaN layer is formed with N-type electrode, described P
+-GaN layer is formed with P-type electrode, the described AlGaN schottky barrier layer of described isolated area opposite side is formed with gate electrode, source electrode and drain electrode, and described N-type electrode and described N
+between-GaN layer, described P-type electrode and described P
+between-GaN layer and described source electrode and all form ohmic contact between drain electrode and described AlGaN schottky barrier layer.
2. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described substrate is 50 ~ 1000 microns, and described backing material is one or more in Si, SiC, GaN, Diamond and sapphire.
3. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described nucleating layer is 10 ~ 500 nanometers, and described nucleating layer material is AlN and/or AlGaN.
4. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described GaN channel layer is 1 ~ 3 micron, and described GaN channel layer and described nucleating layer form heterojunction.
5. the integrated optoelectronic device based on GaN according to claim 1, it is characterized in that, thickness 5 ~ 200 nanometer of described AlGaN schottky barrier layer, described AlGaN schottky barrier layer and described GaN channel layer form heterojunction, and in described AlGaN schottky barrier layer, the chemical formula of AlGaN is Al
xga
1-Xn, wherein, X is 0.1 ~ 0.5.
6. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described device isolation layer is 20 ~ 1000 nanometers, and described device isolation layer material is nitride dielectric film.
7. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, described N
+the thickness of-GaN layer is 500 ~ 1500 nanometers, and doping content is more than or equal to 1 × 10
17cm
-3; Described P
+the thickness of-GaN layer is less than or equal to 50 nanometers, and doping content is more than or equal to 1 × 10
18cm
-3.
8. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described i-AlGaN layer is 100 ~ 1500 nanometers, and impurity concentration is less than or equal to 1 × 10
16cm
-3, and in described i-AlGaN layer, the chemical formula of AlGaN is Al
yga
1-Yn, wherein, Y is 0 ~ 1; The thickness of described P-AlGaN layer is 50 ~ 800 nanometers, and doping content is more than or equal to 1 × 10
17cm
-3, and in described P-AlGaN layer, the chemical formula of AlGaN is Al
zga
1-Zn, wherein, Z is 0.1 ~ 0.5.
9. based on an epitaxial structure for the integrated optoelectronic device of GaN, it is characterized in that, comprise the substrate, nucleating layer, GaN channel layer, AlGaN schottky barrier layer, device isolation layer, the N that are from bottom to top formed successively
+-GaN layer, i-AlGaN layer, P-AlGaN layer and P
+-GaN layer, wherein, forms two-dimensional electron gas between described AlGaN schottky barrier layer and described GaN channel layer.
10. a preparation method for the integrated optoelectronic device based on GaN according to any one of claim 1-8, is characterized in that, comprise the following steps:
Substrate is from bottom to top formed into stratum nucleare, GaN channel layer, AlGaN schottky barrier layer, device isolation layer, N successively
+-GaN layer, i-AlGaN layer, P-AlGaN layer and P
+-GaN layer, forms two-dimensional electron gas simultaneously between described AlGaN schottky barrier layer and described GaN channel layer;
Adopt ion implantation or etching technics at described P
+-GaN layer forms isolated area, and described isolated area is from described P
+the upper surface of-GaN layer embeds and extends to described GaN channel layer inside;
Adopt photoetching, etching, metal deposition or the P of stripping technology in described isolated area side
+-GaN layer forms P-type electrode, and makes described P-type electrode and described P by short annealing
+ohmic contact is formed between-GaN layer;
Photoetching or etching technics is adopted to expose the described AlGaN schottky barrier layer of described isolated area opposite side and expose described N in described i-AlGaN layer both sides
+-GaN layer;
Adopt photoetching, metal deposition or stripping technology at described N
+-GaN layer forms N-type electrode, and form source electrode and drain electrode in described AlGaN schottky barrier layer, and make described N-type electrode and described N by short annealing
+between-GaN layer and described source electrode and form ohmic contact between drain electrode and AlGaN schottky barrier layer;
Adopt photoetching, metal deposition or form gate electrode between the source electrode of stripping technology in described AlGaN schottky barrier layer and drain electrode.
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