CN104900747A - Photoelectric integrated device based on GaN, and preparing method and epitaxial structure thereof - Google Patents

Abstract

The invention provides a photoelectric integrated device based on GaN, and a preparing method and an epitaxial structure thereof. The device comprises a substrate, a nucleating layer, a GaN channel layer, an AlGaN Schottky barrier layer which are successively laminated up and down. Two dimensional electronic gas is formed between the uppermost two layers. The Schottky barrier layer is provided with an isolating area which extends to the inner part of the GaN channel layer in an embedded manner. A device isolating layer, an N+-GaN layer, an i-AlGaN layer, a P-AlGaN layer and a P+-GaN layer are successively formed on the Schottky barrier layer of the side of the isolating area from up to down. An N type electrode is formed on the N+-GaN layer. A P type electrode is fromed on the P+-GaN layer. A gate electrode, a source electrode and a drain elelctrode are formed on the Schottky barrier layer of the other side. The N type electrode, the P type electrode, the source electrode and the drain electrode are respectively in contact with the layers thereof. According to the invention, integration between a PIN photoelectric detector and a GaN-based HEMT is realized.

Description

GaN-based optoelectronic integrated device and its preparation method, epitaxial structure

technical field

The invention relates to the technical field of semiconductor manufacturing, in particular to a GaN-based optoelectronic integrated device, a preparation method thereof, and an epitaxial structure.

Background technique

As a typical representative of the third-generation semiconductor, GaN (gallium nitride) has the characteristics of high power, high efficiency, and high operating temperature, and has been widely used in various fields such as power conversion and microwave communication. At present, space communication and long-distance wireless sensing mostly use microwave communication.

GaN-based PIN photodetectors have the following advantages: do not absorb visible light, do not require a filter system, and can detect ultraviolet light; do not need to make a shallow junction, which can greatly improve quantum efficiency; high temperature resistance, strong radiation resistance, and can be used in extreme environments work normally. Therefore, GaN-based PIN photodetectors can be widely used in space detection, fire warning, sea oil spill detection, industrial temperature control and other fields, and these fields have always been the focus of attention.

In order to further increase chip functions, improve integration, simplify the system, reduce size and cost, optical integration technology is currently used. Optical-optical integration and optoelectronic integration are two ways of optical integration technology. Optical-optical integration is represented by integrated optical circuits, from the combination of bulk structures to the realization of optical modulators and optical switches in the form of optical waveguides. Optoelectronic integration refers to the integration of photonic devices and electronic devices on the same substrate to obtain an optoelectronic integrated circuit. Optical-optical integration is relatively less difficult, while optoelectronic integration has always been a research difficulty and focus due to a series of issues related to structural compatibility, material compatibility, and process compatibility. The integration of GaN-based PIN photodetectors and GaN-based HEMTs (high-power electron mobility transistors) makes the following wireless detection technology routes possible: use PIN photodetectors as ultraviolet light detectors for space detection, sea oil spills Detection, industrial temperature control, fire warning and other security detection, and finally the GaN-based HEMT integrated at the wafer level amplifies the signal and transmits it through the antenna to transmit relevant information.

However, although GaN is developing rapidly, it has only been 10 years, and optoelectronic integration is difficult. Therefore, the current research on GaN-based PIN photodetectors has just emerged, and there is an urgent need for GaN-based PIN photodetectors and GaN-based photodetectors. A breakthrough has been made in the optoelectronic integration of HEMTs.

Contents of the invention

The technical problem mainly solved by the present invention is to provide a GaN-based optoelectronic integrated device and its preparation method and epitaxial structure, which can realize the integration between GaN-based PIN photodetectors and GaN-based HEMTs.

In order to solve the above-mentioned technical problems, a technical solution adopted by the present invention is to provide a GaN-based optoelectronic integrated device, comprising: a substrate; a nucleation layer, the nucleation layer is formed on the substrate; a GaN channel layer, the GaN channel layer is formed on the nucleation layer; the AlGaN Schottky barrier layer, the AlGaN Schottky barrier layer is formed on the GaN channel layer, and the AlGaN Schottky A two-dimensional electron gas is formed between the base barrier layer and the GaN channel layer; an isolation region is embedded and extended from the upper surface of the AlGaN Schottky barrier layer to the inside of the GaN channel layer; Wherein, a device isolation layer, an N ⁺ -GaN layer, an i-AlGaN layer, a P-AlGaN layer and a P ⁺ - A GaN layer, an N-type electrode is formed on the N ⁺ -GaN layer, a P-type electrode is formed on the P ⁺ -GaN layer, and on the AlGaN Schottky barrier layer on the other side of the isolation region A gate electrode, a source electrode, and a drain electrode are formed, and between the N-type electrode and the N ⁺ -GaN layer, between the P-type electrode and the P ⁺ -GaN layer, and between the source electrode and the drain electrode An ohmic contact is formed between the electrode and the AlGaN Schottky barrier layer.

Preferably, the thickness of the substrate is 50-1000 microns, and the substrate material is one or more of Si, SiC, GaN, Diamond and sapphire.

Preferably, the thickness of the nucleation layer is 10-500 nanometers, and the material of the nucleation layer is AlN and/or AlGaN.

Preferably, the thickness of the GaN channel layer is 1-3 micrometers, and the GaN channel layer and the nucleation layer form a heterojunction.

Preferably, the thickness of the AlGaN Schottky barrier layer is 5 to 200 nanometers, the AlGaN Schottky barrier layer and the GaN channel layer form a heterojunction, and the AlGaN Schottky barrier layer The chemical formula of AlGaN is Al _X Ga _1-X N, where X is 0.1-0.5.

Preferably, the thickness of the device isolation layer is 20-1000 nanometers, and the material of the device isolation layer is a nitride dielectric thin film.

Preferably, the thickness of the N ⁺ -GaN layer is 500-1500 nanometers, and the doping concentration is greater than or equal to 1×10 ¹⁷ cm ^-3 ; the thickness of the P ⁺ -GaN layer is less than or equal to 50 nanometers, and the doping concentration is Greater than or equal to 1×10 ¹⁸ cm ^-3 .

Preferably, the thickness of the i-AlGaN layer is 100-1500 nanometers, the impurity concentration is less than or equal to 1×10 ¹⁶ cm ^-3 , and the chemical formula of AlGaN in the i-AlGaN layer is Al _Y Ga _1-Y N, Wherein, Y is 0-1; the thickness of the P-AlGaN layer is 50-800 nanometers, the doping concentration is greater than or equal to 1×10 ¹⁷ cm ^-3 , and the chemical formula of AlGaN in the P-AlGaN layer is Al _Z Ga _1-Z N, wherein Z is 0.1-0.5.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide an epitaxial structure of a GaN-based optoelectronic integrated device, including a substrate, a nucleation layer, a GaN channel layer, an AlGaN Schottky barrier layer, device isolation layer, N ⁺ -GaN layer, i-AlGaN layer, P-AlGaN layer and P ⁺ -GaN layer, wherein, the AlGaN Schottky barrier layer and the GaN channel A two-dimensional electron gas is formed between the layers.

In order to solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a method for preparing a GaN-based optoelectronic integrated device according to any one of the above-mentioned methods, which includes the following steps: sequentially forming a substrate on a substrate from bottom to top core layer, GaN channel layer, AlGaN Schottky barrier layer, device isolation layer, N ⁺ -GaN layer, i-AlGaN layer, P-AlGaN layer and P ⁺ -GaN layer, while the AlGaN Schottky A two-dimensional electron gas is formed between the barrier layer and the GaN channel layer; an isolation region is formed on the P ⁺ -GaN layer by ion implantation or etching, and the isolation region is formed from the P ⁺ -GaN layer The upper surface of the upper surface is embedded and extended to the inside of the GaN channel layer; a P-type electrode is formed on the P ⁺ -GaN layer on the side of the isolation region by photolithography, etching, metal deposition or lift-off process, and the rapid annealing is used to make the An ohmic contact is formed between the P-type electrode and the P ⁺ -GaN layer; a photolithography or etching process is used to expose the AlGaN Schottky barrier layer on the other side of the isolation region and the i- The N ⁺ -GaN layer is exposed on both sides of the AlGaN layer; an N-type electrode is formed on the N ⁺ -GaN layer by photolithography, metal deposition or lift-off process, and a source is formed on the AlGaN Schottky barrier layer electrode and drain electrode, and form an ohmic contact between the N-type electrode and the N ⁺ -GaN layer and between the source electrode and the drain electrode and the AlGaN Schottky barrier layer by rapid annealing; using photolithography , metal deposition or lift-off process to form a gate electrode between the source electrode and the drain electrode on the AlGaN Schottky barrier layer.

Different from the situation in the prior art, the beneficial effect of the present invention is: by integrating GaN-based PIN photodetectors and GaN-based HEMTs on the same substrate, and isolating them through isolation regions, it is possible to realize GaN-based PIN photodetectors and GaN-based HEMTs. The integration between base HEMTs can increase chip functions, improve integration, simplify the system, and reduce size and cost.

Description of drawings

FIG. 1 is a schematic structural diagram of a GaN-based optoelectronic integrated device according to an embodiment of the present invention.

2 to 6 are the flow charts of the fabrication of the GaN-based optoelectronic integrated device according to the embodiment of the present invention.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Please refer to FIG. 1 , which is a schematic structural diagram of a GaN-based optoelectronic integrated device according to an embodiment of the present invention. The GaN-based optoelectronic integrated device of the embodiment of the present invention includes: a substrate 10, a nucleation layer 20, a GaN channel layer 30, an AlGaN Schottky barrier layer 40, an isolation region 50, a device isolation layer 60, an N ⁺ -GaN layer 70 , i-AlGaN layer 80 , P-AlGaN layer 90 and P ⁺ -GaN layer 100 .

Nucleation layer 20 is formed on substrate 10 . GaN channel layer 30 is formed on nucleation layer 20 . The AlGaN Schottky barrier layer 40 is formed on the GaN channel layer 30 , and a two-dimensional electron gas 31 is formed between the AlGaN Schottky barrier layer 40 and the GaN channel layer 30 . The isolation region 50 is embedded and extends from the upper surface of the AlGaN Schottky barrier layer 40 to the inside of the GaN channel layer 30 . Wherein, the isolation region 50 can be formed by implanting ions in the manner of implanting ions or etched out by using an etching process. The isolation region 50 isolates the AlGaN Schottky barrier layer 40 and the two-dimensional electron gas 31 into two mutually insulated part.

Wherein, a device isolation layer 60, an N ⁺ -GaN layer 70, an i-AlGaN layer 80, a P-AlGaN layer 90 and a P ⁺ -GaN layer 100. An N-type electrode 71 is formed on the N ⁺ -GaN layer 70 , and a P-type electrode 101 is formed on the P ⁺ -GaN layer 100 . On the AlGaN Schottky barrier layer 40 on the other side of the isolation region 50, a gate electrode 41, a source electrode 42, and a drain electrode 43 are formed, and between the N-type electrode 71 and the N ⁺ -GaN layer 70, the P-type electrode 101 Ohmic contacts are formed between the P ⁺ -GaN layer 100 and between the source electrode 42 and the drain electrode 43 and the AlGaN Schottky barrier layer 40 . Wherein, there are two N-type electrodes 71 and two P-type electrodes 101 , and the two N-type electrodes 71 are respectively located on the N ⁺ -GaN layer 70 on both sides of the i-AlGaN layer 80 . The source electrode 42 is located between the isolation region 50 and the drain electrode 43 , and the gate electrode 41 is located between the source electrode 42 and the drain electrode 43 .

In this embodiment, the thickness of the substrate 10 is 50-1000 microns, and the material of the substrate 10 is one or more of Si, SiC, GaN, Diamond and sapphire. The substrate 10 mainly functions as a basic support.

The thickness of the nucleation layer 20 is 10-500 nanometers, and the material of the nucleation layer 20 is AlN and/or AlGaN. The main function of the nucleation layer 20 is to seal defects from the substrate 10 and reduce the influence of the substrate 10 on the product.

The GaN channel layer 30 has a thickness of 1-3 micrometers, and the GaN channel layer 30 and the nucleation layer 20 form a heterojunction.

The thickness of the AlGaN Schottky barrier layer 40 is 5-200 nanometers, the AlGaN Schottky barrier layer 40 and the GaN channel layer 30 form a heterojunction, and the chemical formula of AlGaN in the AlGaN Schottky barrier layer 40 is Al _X Ga _1-X N, wherein X is 0.1-0.5.

The thickness of the device isolation layer 60 is 20-1000 nanometers, and the material of the device isolation layer 60 is a nitride dielectric film, and the nitride includes but not limited to AlN and SiN. That is to say, the nitride may be one of AlN and SiN, or may contain both.

The thickness of the N ⁺ -GaN layer 70 is 500-1500 nanometers, and the doping concentration is greater than or equal to 1×10 ¹⁷ cm ^-3 ; the thickness of the P ⁺ -GaN layer 100 is less than or equal to 50 nanometers, and the doping concentration is greater than or equal to 1×10 17 cm -3 . 10 ¹⁸ cm ^-3 .

The thickness of the i-AlGaN layer 80 is 100-1500 nm, the impurity concentration is less than or equal to 1×10 ¹⁶ cm ^-3 , and the chemical formula of AlGaN in the i-AlGaN layer 80 is Al _Y Ga _1-Y N, where Y is 0 ~1; the thickness of the P-AlGaN layer 90 is 50-800 nanometers, the doping concentration is greater than or equal to 1×10 ¹⁷ cm ^-3 , and the chemical formula of AlGaN in the P-AlGaN layer 90 is Al _Z Ga _1-Z N, wherein , Z is 0.1-0.5.

The embodiment of the present invention also provides a method for preparing a GaN-based optoelectronic integrated device, please refer to FIG. 2 to FIG. 6 , the preparation method includes the following steps:

S1: Form a nucleation layer 20, a GaN channel layer 30, an AlGaN Schottky barrier layer 40, a device isolation layer 60, an N ⁺ -GaN layer 70, and an i-AlGaN layer 80 sequentially from bottom to top on the substrate 10 , P-AlGaN layer 90 and P ⁺ -GaN layer 100 , and at the same time form a two-dimensional electron gas 31 between the AlGaN Schottky barrier layer 40 and the GaN channel layer 30 .

Among them, substrate 10, nucleation layer 20, GaN channel layer 30, AlGaN Schottky barrier layer 40, device isolation layer 60, N ⁺ -GaN layer 70, i-AlGaN layer 80, P-AlGaN layer 90 and The P ⁺ -GaN layer 100 is a sequentially stacked structure, as shown in FIG. 2 .

The thickness of the substrate 10 is 50-1000 microns, and the material of the substrate 10 is one or more of Si, SiC, GaN, Diamond and sapphire. The substrate 10 mainly functions as a basic support.

The thickness of the nucleation layer 20 is 10-500 nanometers, and the material of the nucleation layer 20 is AlN and/or AlGaN. The main function of the nucleation layer 20 is to seal defects from the substrate 10 and reduce the influence of the substrate 10 on the product.

The GaN channel layer 30 has a thickness of 1-3 micrometers, and the GaN channel layer 30 and the nucleation layer 20 form a heterojunction.

The thickness of the AlGaN Schottky barrier layer 40 is 5-200 nanometers, the AlGaN Schottky barrier layer 40 and the GaN channel layer 30 form a heterojunction, and the chemical formula of AlGaN in the AlGaN Schottky barrier layer 40 is Al _X Ga _1-X N, wherein X is 0.1-0.5.

The thickness of the device isolation layer 60 is 20-1000 nanometers, and the material of the device isolation layer 60 is a nitride dielectric film, and the nitride includes but not limited to AlN and SiN. That is to say, the nitride may be one of AlN and SiN, or may contain both.

The thickness of the N ⁺ -GaN layer 70 is 500-1500 nanometers, and the doping concentration is greater than or equal to 1×10 ¹⁷ cm ^-3 ; the thickness of the P ⁺ -GaN layer 100 is less than or equal to 50 nanometers, and the doping concentration is greater than or equal to 1×10 17 cm -3 . 10 ¹⁸ cm ^-3 .

The thickness of the i-AlGaN layer 80 is 100-1500 nm, the impurity concentration is less than or equal to 1×10 ¹⁶ cm ^-3 , and the chemical formula of AlGaN in the i-AlGaN layer 80 is Al _Y Ga _1-Y N, where Y is 0 ~1; the thickness of the P-AlGaN layer 90 is 50-800 nanometers, the doping concentration is greater than or equal to 1×10 ¹⁷ cm ^-3 , and the chemical formula of AlGaN in the P-AlGaN layer 90 is Al _Z Ga _1-Z N, wherein , Z is 0.1-0.5.

S2: Form an isolation region 50 on the P ⁺ -GaN layer 100 by ion implantation or an etching process, and the isolation region 50 is embedded and extended from the upper surface of the P ⁺ -GaN layer 100 to the inside of the GaN channel layer 30 .

Wherein, the isolation region 50 isolates the AlGaN Schottky barrier layer 40 and the two-dimensional electron gas 31 into two parts insulated from each other, as shown in FIG. 3 .

S3: Form a P-type electrode 101 on the P ⁺ -GaN layer 100 on the side of the isolation region 50 by photolithography, etching, metal deposition or lift-off process, and make the P-type electrode 101 and the P ⁺ -GaN layer 100 by rapid annealing Ohmic contact is formed between them.

Wherein, there are two P-type electrodes 101 , both of which are located on the P ⁺ -GaN layer 100 on one side of the isolation region 50 , as shown in FIG. 4 .

S4: Exposing the AlGaN Schottky barrier layer 40 on the other side of the isolation region 50 and exposing the N ⁺ -GaN layer 70 on both sides of the i-AlGaN layer 80 by photolithography or etching.

Wherein, after photolithography or etching, the device isolation layer 60, the N ⁺ -GaN layer 70, the i-AlGaN layer 80, the P-AlGaN layer 90 and the P ⁺ -GaN layer 100 are all located on one side of the isolation region 50, and The other side of the isolation region 50 only exposes the AlGaN Schottky barrier layer 40 , as shown in FIG. 5 .

S5: Form N-type electrode 71 on N ⁺ -GaN layer 70 by photolithography, metal deposition or lift-off process, and form source electrode 42 and drain electrode 43 on AlGaN Schottky barrier layer 40, and make Ohmic contacts are formed between the N-type electrode 71 and the N ⁺ -GaN layer 70 and between the source electrode 42 and the drain electrode 43 and the AlGaN Schottky barrier layer 40 .

Wherein, there are two N-type electrodes 71 , and the two N-type electrodes 71 are respectively located on the N ⁺ -GaN layer 70 on both sides of the i-AlGaN layer 80 . The source electrode 42 is located between the isolation region 50 and the drain electrode 43 , and the gate electrode 41 is located between the source electrode 42 and the drain electrode 43 , as shown in FIG. 6 .

S6: Forming the gate electrode 41 between the source electrode 42 and the drain electrode 43 on the AlGaN Schottky barrier layer 40 by photolithography, metal deposition or lift-off process.

Wherein, after the gate electrode 41 is formed, the GaN-based optoelectronic integrated device of the foregoing embodiment is obtained, as shown in FIG. 1 .

The embodiment of the present invention also provides an epitaxial structure of a GaN-based optoelectronic integrated device, and the epitaxial structure is the product obtained in step S1 in the preparation method of the embodiment of the present invention. The epitaxial structure includes substrate 10, nucleation layer 20, GaN channel layer 30, AlGaN Schottky barrier layer 40, device isolation layer 60, N ⁺ -GaN layer 70, i-AlGaN layer 80 , P-AlGaN layer 90 and P ⁺ -GaN layer 100 , wherein a two-dimensional electron gas 31 is formed between the AlGaN Schottky barrier layer 40 and the GaN channel layer 30 .

Through the above method, the present invention has the advantages of rich chip functions, high integration, simplified system, low size and cost, etc., and can be used in space detection, sea surface oil spill detection, industrial temperature control, fire warning and other aspects.

The above is only an embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the description of the present invention and the contents of the accompanying drawings, or directly or indirectly used in other related technologies fields, all of which are equally included in the scope of patent protection of the present invention.

Claims (10)

1. based on an integrated optoelectronic device of GaN, it is characterized in that, comprising:

Substrate;

Nucleating layer, described nucleating layer is formed over the substrate;

GaN channel layer, described GaN channel layer is formed on described nucleating layer;

AlGaN schottky barrier layer, described AlGaN schottky barrier layer is formed on described GaN channel layer, and forms two-dimensional electron gas between described AlGaN schottky barrier layer and described GaN channel layer;

Isolated area, described isolated area embeds from the upper surface of described AlGaN schottky barrier layer and extends to described GaN channel layer inside;

Wherein, the described AlGaN schottky barrier layer of described isolated area side is from bottom to top formed with device isolation layer, N successively ⁺-GaN layer, i-AlGaN layer, P-AlGaN layer and P ⁺-GaN layer, described N ⁺-GaN layer is formed with N-type electrode, described P ⁺-GaN layer is formed with P-type electrode, the described AlGaN schottky barrier layer of described isolated area opposite side is formed with gate electrode, source electrode and drain electrode, and described N-type electrode and described N ⁺between-GaN layer, described P-type electrode and described P ⁺between-GaN layer and described source electrode and all form ohmic contact between drain electrode and described AlGaN schottky barrier layer.

2. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described substrate is 50 ~ 1000 microns, and described backing material is one or more in Si, SiC, GaN, Diamond and sapphire.

3. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described nucleating layer is 10 ~ 500 nanometers, and described nucleating layer material is AlN and/or AlGaN.

4. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described GaN channel layer is 1 ~ 3 micron, and described GaN channel layer and described nucleating layer form heterojunction.

5. the integrated optoelectronic device based on GaN according to claim 1, it is characterized in that, thickness 5 ~ 200 nanometer of described AlGaN schottky barrier layer, described AlGaN schottky barrier layer and described GaN channel layer form heterojunction, and in described AlGaN schottky barrier layer, the chemical formula of AlGaN is Al _xga _1-Xn, wherein, X is 0.1 ~ 0.5.

6. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described device isolation layer is 20 ~ 1000 nanometers, and described device isolation layer material is nitride dielectric film.

7. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, described N ⁺the thickness of-GaN layer is 500 ~ 1500 nanometers, and doping content is more than or equal to 1 × 10 ¹⁷cm ^-3; Described P ⁺the thickness of-GaN layer is less than or equal to 50 nanometers, and doping content is more than or equal to 1 × 10 ¹⁸cm ^-3.

8. the integrated optoelectronic device based on GaN according to claim 1, is characterized in that, the thickness of described i-AlGaN layer is 100 ~ 1500 nanometers, and impurity concentration is less than or equal to 1 × 10 ¹⁶cm ^-3, and in described i-AlGaN layer, the chemical formula of AlGaN is Al _yga _1-Yn, wherein, Y is 0 ~ 1; The thickness of described P-AlGaN layer is 50 ~ 800 nanometers, and doping content is more than or equal to 1 × 10 ¹⁷cm ^-3, and in described P-AlGaN layer, the chemical formula of AlGaN is Al _zga _1-Zn, wherein, Z is 0.1 ~ 0.5.

9. based on an epitaxial structure for the integrated optoelectronic device of GaN, it is characterized in that, comprise the substrate, nucleating layer, GaN channel layer, AlGaN schottky barrier layer, device isolation layer, the N that are from bottom to top formed successively ⁺-GaN layer, i-AlGaN layer, P-AlGaN layer and P ⁺-GaN layer, wherein, forms two-dimensional electron gas between described AlGaN schottky barrier layer and described GaN channel layer.

10. a preparation method for the integrated optoelectronic device based on GaN according to any one of claim 1-8, is characterized in that, comprise the following steps:

Substrate is from bottom to top formed into stratum nucleare, GaN channel layer, AlGaN schottky barrier layer, device isolation layer, N successively ⁺-GaN layer, i-AlGaN layer, P-AlGaN layer and P ⁺-GaN layer, forms two-dimensional electron gas simultaneously between described AlGaN schottky barrier layer and described GaN channel layer;

Adopt ion implantation or etching technics at described P ⁺-GaN layer forms isolated area, and described isolated area is from described P ⁺the upper surface of-GaN layer embeds and extends to described GaN channel layer inside;

Adopt photoetching, etching, metal deposition or the P of stripping technology in described isolated area side ⁺-GaN layer forms P-type electrode, and makes described P-type electrode and described P by short annealing ⁺ohmic contact is formed between-GaN layer;

Photoetching or etching technics is adopted to expose the described AlGaN schottky barrier layer of described isolated area opposite side and expose described N in described i-AlGaN layer both sides ⁺-GaN layer;

Adopt photoetching, metal deposition or stripping technology at described N ⁺-GaN layer forms N-type electrode, and form source electrode and drain electrode in described AlGaN schottky barrier layer, and make described N-type electrode and described N by short annealing ⁺between-GaN layer and described source electrode and form ohmic contact between drain electrode and AlGaN schottky barrier layer;

Adopt photoetching, metal deposition or form gate electrode between the source electrode of stripping technology in described AlGaN schottky barrier layer and drain electrode.