CN109913949A - A kind of thermal field simulation system of silicon carbide electric-resistivity method growth crystal - Google Patents
A kind of thermal field simulation system of silicon carbide electric-resistivity method growth crystal Download PDFInfo
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- CN109913949A CN109913949A CN201910123611.8A CN201910123611A CN109913949A CN 109913949 A CN109913949 A CN 109913949A CN 201910123611 A CN201910123611 A CN 201910123611A CN 109913949 A CN109913949 A CN 109913949A
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Abstract
A kind of thermal field simulation system of silicon carbide electric-resistivity method growth crystal, including insulation cover, heating plate, temperature thermocouple and through-hole, insulation cover is that top view cross section is circular hollow cylinder, its sidewall surfaces is evenly distributed with four column through-holes being respectively in four planes that four pass through insulation cover central axes, it is mounted on the inside of insulation cover and overlooks symmetrical even number rectangle heating plate, each through-hole has the tight-fitting of the thermocouple of a cylindrical cross-section to be inserted into, or is filled in by porcelain plunger to close.The system can critically obtain the temperature of each specific location in inside, whether have good dummy activity enough for temperature in analogue crystals growth course, whether capable of analyzing the equilibrium of thermal field by the measurement in simulation.
Description
Technical field
The present invention relates to carborundum crystals correlative technology field, specially a kind of thermal field of silicon carbide electric-resistivity method growth crystal
Simulation system.
Background technique
Silicon carbide is as the unique stable compound of carbon and silicon, and thermal conductivity is about 4.4 times of silicon, and critical breakdown electric field is about
8 times of silicon, the saturation drift velocity of electronics are 2 times of silicon.These performances of silicon carbide become high frequency, high-power, resistance to height
The preferred material of warm, Flouride-resistani acid phesphatase semiconductor devices can be used for the monitoring, crude oil exploration, environment prison of ground nuclear reactor system
In survey and Aeronautics and Astronautics, radar, communication system and the extreme environment in the fields such as powerful electronic commutator and automobile motor.
The method of growth silicon carbide waste crystal includes physical vapor transport and chemical vapor transport method at present.
The heating means of crystal growth is typically all opposed two pieces of parallel heating plates or cage heater at present,
This heater for having gap provides condition for seeding, generally also can guarantee thermal field equilibrium at high temperature, but in annealing
It tends not to guarantee thermal field equilibrium, and the unbalanced of this thermal field often brings the defect etc. generated in crystal annealing.
It is that thermocouple is generally only arbitrarily arranged or parallel by taking the prior art as an example, rotate arrangement several or more than ten
It is a, still, thermal field in annealing is had no idea unbalanced cannot to carry out comprehensively, accurately show in the prior art.
Whether therefore, it is necessary to use the thermal field in a kind of analog form simulation insulation cover, and it is equal subtly to show temperature everywhere
It is even, and then help judge whether heating method is enough and appropriate.
Summary of the invention
It is existing to solve the purpose of the present invention is to provide a kind of thermal field simulation system of silicon carbide electric-resistivity method growth crystal
Technology the problem of having no idea all-sidedly and accurately to be showed whether the thermal field equilibrium annealing process.
To achieve the above object, the invention provides the following technical scheme: a kind of thermal field of silicon carbide electric-resistivity method growth crystal
Simulation system, including insulation cover, heating plate, temperature thermocouple and through-hole, it is characterised in that: the insulation cover is that top view cross section is
Circular hollow cylinder, sidewall surfaces be evenly distributed be respectively at it is N number of in N number of plane of insulation cover central axes
N column through-hole, and be mounted on the inside of insulation cover and overlook symmetrically arranged even number rectangle heating plate, the N column through-hole each
Through-hole has the tight-fitting of the thermocouple of a cylindrical cross-section to be inserted into, or is filled in by a heat-resistant component of nail-like
With closing.
Preferably, the side wall of the insulation cover is cylinder.
Preferably, N number of N column through-hole in N number of plane of insulation cover central axes, specifically 4 pass through heat preservation
Cover 4 column through-holes in 4 planes of central axes；From depression angle, 4 column through-holes respectively where 4 planes formd 4
The slave insulation cover that adjacent angle is 90 ° overlooks the outwardly extending ray of axial point；The number of openings of each column through-hole is M；It is each
Column through-hole, which is equipped with one, integrally makes the thermocouple of insertion keep the tungsten alloy outer sleeve being parallel to each other.
Preferably, the pair of rectangle heating plate be a monolith tungsten alloy heating plate or tungsten alloy heating tube in length and breadth
The either-or of the rectangular array of heating tube made of arrangement.
Preferably, there are four the even number rectangle heating plate settings, it is arranged between the adjacent heating plate and has the gap.
Preferably, the temperature thermocouple is provided with four groups, each of each group of temperature thermocouple temperature thermocouple
First ecto-entad passes through a lantern ring on tungsten alloy outer sleeve, then penetrates from a through-hole, each group of temperature thermocouple
Quantity is L, and L is less than or equal to the positive integer of M, and the insertion depth of each temperature thermocouple is adjustable in 0-50cm.
Preferably, each described temperature thermocouple is connected with a secondary meter；The secondary meter is by the thermometric
The numerical value that thermocouple measures in real time passes the thermal field analog computing system in PC machine back by secondary meter array interface.
Preferably, there is the quantity for being greater than the temperature thermocouple quantity at most loaded on the secondary meter array interface
Interface.
Preferably, the thermal field analog computing system can receive and convert the real time temperature of all temperature thermocouples,
And the real time temperature state of all temperature thermocouples can be shown in such a way that color and/or numerical value are shown.
Preferably, the heat-resistant component is specifically the porcelain plunger of cylindrical cross-section.
A kind of thermal field analog analysing method of silicon carbide electric-resistivity method growth crystal, according to a kind of carbonization silicon resistor above-mentioned
Method grows the annealing device of crystal to carry out, which comprises the following steps: 1) virtual seeding initial step: axial symmetry
4 rectangle heating plates have been installed on ground, so that it is overlooked the central distribution evenly around insulation cover, extremely by 4 rectangle heater plates
Under certain steady temperature between 500-800 DEG C, the upper cover of insulation cover is opened, from the upper opening of upper heating plate vertically downward
The base part of seeding device is protruded into, insulation cover is closed, by least 20% extraction porcelain plunger in the 4 column through-hole and is filled in
Each practical temperature thermocouple utilized is connected by one temperature thermocouple with a secondary meter, and secondary by this
Instrument passes the numerical value that corresponding temperature thermocouple measures in real time back the thermal field in PC machine simulation by secondary meter array interface
Computing system；It is shown in the 3 dimension display interfaces in the thermal field analog computing system and adjusts each aforementioned practical utilization
Temperature thermocouple 3 dimension display interfaces in display effect, and adjust to 3 dimension display interfaces in it is corresponding with physical location；
There is the interface for the quantity for being greater than the temperature thermocouple quantity at most loaded on the secondary meter array interface；The thermal field mould
Quasi- computing system can receive and convert the real time temperature of all temperature thermocouples, and can be shown with color and/or numerical value
Mode show the real time temperature states of all temperature thermocouples；By 4 rectangle heater plates between 1500-1800 DEG C
Certain steady temperature under, start virtual seeding process.
2) it virtually anneals preparation process: after 10-20h, assert that seeding terminates, keep 4 rectangle heater plate temperature
It is constant, it is detached from and is withdrawn from the base part of seeding device, closes the upper cover of insulation cover, by 4 rectangle heating plates to be no less than 1h
Time be cooled to 1500 DEG C.
3) virtual annealing steps: sample is annealed since 1500 DEG C, 4 rectangle heating plates are uniformly with 50-60 DEG C/h
Rate cooling, be cooled to 50 ° or less.
4) observation and analytical procedure: with real-time cooling data all in the thermal field analog computing system recording step 3,
It is the different transition interval of several colors that 1500 DEG C-room temperature, which is arranged, with different rates difference viewing angle replay procedure 3 repeatedly
Cooling in each temperature thermocouple temperature variations, analyze that possible thermal field is uneven or unbalanced position, formed
Analysis report.
Compared with prior art, the invention has the following advantages: the thermal field mould of silicon carbide electric-resistivity method growth crystal
Quasi- system is inserted into four column temperature thermocouples in the gap between adjacent heating plate, critically obtain in this way internal each
This temperature for being likely to temperature and not enough locating at the temperature of a specific location, especially gap, for analogue crystals growth course
Whether middle temperature has good dummy activity enough, also, the depth of temperature thermocouple insertion is also adjustable, really makes
The case where some thermometric blind areas are all exposed, and effectively understand thermal field each position, to ensure that crystal growth does sufficient preparation.
Detailed description of the invention
Fig. 1 is overlooking structure diagram of the present invention；
Fig. 2 is protective cover tile arrangement schematic diagram of the present invention；
Fig. 3 is temperature transmission system flow diagram of the present invention.
In figure: 1, insulation cover, 2, heating plate, 3, temperature thermocouple, 4, through-hole.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1
Fig. 1-3 is please referred to, the present invention provides a kind of technical solution: a kind of thermal field simulation of silicon carbide electric-resistivity method growth crystal
System, including insulation cover 1, heating plate 2, temperature thermocouple 3 and through-hole 4, it is characterised in that: the insulation cover 1 is top view cross section
For circular hollow cylinder, sidewall surfaces, which are evenly distributed with, to be respectively in 4 planes that 4 pass through insulation cover central axes
4 column through-holes 4, and be mounted on the inside of insulation cover 1 and overlook symmetrically arranged 4 rectangle heating plates 2, the N column through-hole 4 it is each
A through-hole has the tight-fitting of the thermocouple of a cylindrical cross-section to be inserted into, or by a heat-resistant component plug of nail-like
Enter to close.
The side wall of the insulation cover 1 is cylinder.
From depression angle, 4 column through-holes respectively where 4 planes to form 4 adjacent angles be 90 ° from heat preservation
Cover 1 overlooks the outwardly extending ray of axial point；The number of openings of each column through-hole is M；Each column through-hole is equipped with an one
The thermocouple of insertion is set to keep the tungsten alloy outer sleeve being parallel to each other likes.
The pair of rectangle heating plate 2 is a monolith tungsten alloy heating plate or tungsten alloy heating tube arranges in length and breadth and
At heating tube rectangular array either-or.
There are four the settings of even number rectangle heating plate 2, is arranged between the adjacent heating plate 2 and has the gap.
The temperature thermocouple 3 is provided with four groups, and each of each group of temperature thermocouple 3 temperature thermocouple 3 is first
Ecto-entad passes through a lantern ring on tungsten alloy outer sleeve, then penetrates from a through-hole, the quantity of each group of temperature thermocouple 3
The positive integer of M is less than or equal to for L, L, the insertion depth of each temperature thermocouple is adjustable in 0-50cm.
Each described temperature thermocouple 3 is connected with a secondary meter；The secondary meter is by the temperature thermocouple 3
The numerical value measured in real time passes the thermal field analog computing system in PC machine back by secondary meter array interface.
There is the interface for the quantity for being greater than 3 quantity of temperature thermocouple at most loaded on the secondary meter array interface.
The thermal field analog computing system can receive and convert the real time temperature of all temperature thermocouples 3, and can be with
The real time temperature state of all temperature thermocouples 3 is shown in such a way that color and/or numerical value are shown.
The heat-resistant component is specifically the porcelain plunger of cylindrical cross-section.The nail-like refers to external plug head split-phase
It is bigger for plunger body sectional area.
A kind of thermal field analog analysing method of silicon carbide electric-resistivity method growth crystal, according to a kind of carbonization silicon resistor above-mentioned
Method grows the annealing device of crystal to carry out, which comprises the following steps: 1) virtual seeding initial step: axial symmetry
4 rectangle heating plates 2 have been installed on ground, so that it is overlooked the central distribution evenly around insulation cover 1,4 rectangle heating plates 2 are heated
To certain steady temperature between 500-800 DEG C, the upper cover of insulation cover 1 is opened, it is vertical from the upper opening of upper heating plate 2
The base part of seeding device is extended downwardly into, insulation cover 1 is closed, at least 20% in the 4 column through-hole is extracted into porcelain plunger
And a temperature thermocouple 3 is filled in, each practical temperature thermocouple 3 utilized is connected with a secondary meter, and leads to
The secondary meter is crossed to pass the numerical value that corresponding temperature thermocouple 3 measures in real time in PC machine by secondary meter array interface back
Thermal field analog computing system；In the thermal field analog computing system 3 dimension display interfaces in show and adjust it is aforementioned each
The temperature thermocouple 3 actually utilized 3 dimension display interfaces in display effect, and adjust to 3 dimension display interfaces in reality
Position is corresponding；There is the interface for the quantity for being greater than 3 quantity of temperature thermocouple at most loaded on the secondary meter array interface；
The thermal field analog computing system can receive and convert the real time temperature of all temperature thermocouples 3, and can with color and/
Or the mode that shows of numerical value shows the real time temperature state of all temperature thermocouples 3；4 rectangle heating plates 2 are heated to
Under certain steady temperature between 1500-1800 DEG C, start virtual seeding process.
2) it virtually anneals preparation process: after 10-20h, assert that seeding terminates, keep 42 heating temperatures of rectangle heating plate
It is constant, it is detached from and is withdrawn from the base part of seeding device, closes the upper cover of insulation cover 1, by 4 rectangle heating plates 2 with no less than
The time of 1h is cooled to 1500 DEG C.
3) virtual annealing steps: sample is annealed since 1500 DEG C, 4 rectangle heating plates 2 are uniformly with 50-60 DEG C/h
Rate cooling, be cooled to 50 ° or less.
4) observation and analytical procedure: with real-time cooling data all in the thermal field analog computing system recording step 3,
It is the different transition interval of several colors that 1500 DEG C-room temperature, which is arranged, with different rates difference viewing angle replay procedure 3 repeatedly
Cooling in each temperature thermocouple 3 temperature variations, analyze that possible thermal field is uneven or unbalanced position, formed
Analysis report.Here it can set from 1500 DEG C to 0 and DEG C about to be arranged from red, orange, yellow, green, indigo, azure, purple, about 200 DEG C are a kind of color.
Embodiment 2
Fig. 1-3 is please referred to, the present invention provides a kind of technical solution: a kind of thermal field simulation of silicon carbide electric-resistivity method growth crystal
System, including insulation cover 1, heating plate 2, temperature thermocouple 3 and through-hole 4, it is characterised in that: the insulation cover 1 is top view cross section
For circular hollow cylinder, sidewall surfaces, which are evenly distributed with, to be respectively in 6 planes that 6 pass through insulation cover central axes
6 column through-holes 4, and be mounted on the inside of insulation cover 1 and overlook symmetrically arranged 6 rectangle heating plates 2, the N column through-hole 4 it is each
A through-hole has the tight-fitting of the thermocouple of a cylindrical cross-section to be inserted into, or by a heat-resistant component plug of nail-like
Enter to close.
The side wall of the insulation cover 1 is cylinder.
From depression angle, 6 column through-holes respectively where 6 planes to form 6 adjacent angles be 60 ° from heat preservation
Cover 1 overlooks the outwardly extending ray of axial point；The number of openings of each column through-hole is M；Each column through-hole is equipped with an one
The thermocouple of insertion is set to keep the tungsten alloy outer sleeve being parallel to each other likes.
The pair of rectangle heating plate 2 is a monolith tungsten alloy heating plate or tungsten alloy heating tube arranges in length and breadth and
At heating tube rectangular array either-or.
The even number rectangle heating plate 2 is provided with 6, is arranged between the adjacent heating plate 2 and has the gap.
Preferably, the temperature thermocouple 3 is provided with 6 groups, each of each group of temperature thermocouple 3 temperature thermocouple
3 first ecto-entads pass through a lantern ring on tungsten alloy outer sleeve, then penetrate from a through-hole, each group of temperature thermocouple 3
Quantity be L, L is less than or equal to the positive integer of M, and the insertion depth of each temperature thermocouple is adjustable in 10-60cm.
Preferably, each described temperature thermocouple 3 is connected with a secondary meter；The secondary meter is by the thermometric
The numerical value that thermocouple 3 measures in real time passes the thermal field analog computing system in PC machine back by secondary meter array interface.
Preferably, there is the quantity for being greater than 3 quantity of temperature thermocouple at most loaded on the secondary meter array interface
Interface.
Preferably, the thermal field analog computing system can receive and convert the real time temperature of all temperature thermocouples 3,
And the real time temperature state of all temperature thermocouples 3 can be shown in such a way that color and/or numerical value are shown.
Preferably, the heat-resistant component is specifically the porcelain plunger of cylindrical cross-section.The nail-like refers to external plug
Head split-phase is bigger for plunger body sectional area.
A kind of thermal field analog analysing method of silicon carbide electric-resistivity method growth crystal, according to a kind of carbonization silicon resistor above-mentioned
Method grows the annealing device of crystal to carry out, which comprises the following steps: 1) virtual seeding initial step: axial symmetry
6 rectangle heating plates 2 have been installed on ground, so that it is overlooked the central distribution evenly around insulation cover 1,6 rectangle heating plates 2 are heated
To certain steady temperature between 500-800 DEG C, the upper cover of insulation cover 1 is opened, it is vertical from the upper opening of upper heating plate 2
The base part of seeding device is extended downwardly into, insulation cover 1 is closed, at least 20% in the 4 column through-hole is extracted into porcelain plunger
And a temperature thermocouple 3 is filled in, each practical temperature thermocouple 3 utilized is connected with a secondary meter, and leads to
The secondary meter is crossed to pass the numerical value that corresponding temperature thermocouple 3 measures in real time in PC machine by secondary meter array interface back
Thermal field analog computing system；In the thermal field analog computing system 3 dimension display interfaces in show and adjust it is aforementioned each
The temperature thermocouple 3 actually utilized 3 dimension display interfaces in display effect, and adjust to 3 dimension display interfaces in reality
Position is corresponding；There is the interface for the quantity for being greater than 3 quantity of temperature thermocouple at most loaded on the secondary meter array interface；
The thermal field analog computing system can receive and convert the real time temperature of all temperature thermocouples 3, and can with color and/
Or the mode that shows of numerical value shows the real time temperature state of all temperature thermocouples 3；6 rectangle heating plates 2 are heated to
Under certain steady temperature between 1500-1800 DEG C, start virtual seeding process.
2) it virtually anneals preparation process: after 10-20h, assert that seeding terminates, keep 62 heating temperatures of rectangle heating plate
It is constant, it is detached from and is withdrawn from the base part of seeding device, closes the upper cover of insulation cover 1, by 6 rectangle heating plates 2 with no less than
The time of 1h is cooled to 1500 DEG C.
3) virtual annealing steps: sample is annealed since 1500 DEG C, 6 rectangle heating plates 2 are uniformly with 50-60 DEG C/h
Rate cooling, be cooled to 50 ° or less.
4) observation and analytical procedure: with real-time cooling data all in the thermal field analog computing system recording step 3,
It is the different transition interval of several colors that 1500 DEG C-room temperature, which is arranged, with different rates difference viewing angle replay procedure 3 repeatedly
Cooling in each temperature thermocouple 3 temperature variations, analyze that possible thermal field is uneven or unbalanced position, formed
Analysis report.
Although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art,
It is still possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is carried out etc.
With replacement, all within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in this
Within the protection scope of invention.
Claims (3)
1. a kind of thermal field simulation system of silicon carbide electric-resistivity method growth crystal, including insulation cover (1), heating plate (2), thermometric thermoelectricity
Even (3) and through-hole (4), it is characterised in that: the insulation cover (1) is that top view cross section is circular hollow cylinder, side wall table
Face, which is evenly distributed with, is respectively at N number of N column through-hole (4) in N number of plane of insulation cover central axes, and in insulation cover (1)
Side, which is mounted with, overlooks symmetrically arranged even number rectangle heating plate (2), each through-hole of the N column through-hole (4) has one
The tight-fitting of the thermocouple of cylindrical cross-section is inserted into, or is filled in by a heat-resistant component of nail-like to close.
2. a kind of thermal field simulation system according to claim 1, it is characterised in that:
The side wall of the insulation cover (1) is cylinder；
N number of N column through-hole in N number of plane of insulation cover central axes, specifically 4 pass through the 4 of insulation cover central axes
4 column through-holes in a plane；From depression angle, 4 column through-holes respectively where 4 planes formd 4 adjacent angles and be
90 ° of slave insulation cover (1) overlooks the outwardly extending ray of axial point；The number of openings of each column through-hole is M；Each column through-hole is all
The thermocouple of insertion is integrally set to keep the tungsten alloy outer sleeve being parallel to each other equipped with one；
The pair of rectangle heating plate (2) is that a monolith tungsten alloy heating plate or tungsten alloy heating tube arrange in length and breadth
Heating tube rectangular array either-or；
There are four even number rectangle heating plate (2) settings, is arranged between the adjacent heating plate (2) and has the gap；
The temperature thermocouple (3) is provided with four groups, and each of each group of temperature thermocouple (3) temperature thermocouple (3) is equal
First ecto-entad passes through a lantern ring on tungsten alloy outer sleeve, then penetrates from a through-hole, each group of temperature thermocouple (3)
Quantity is L, and L is less than or equal to the positive integer of M, and the insertion depth of each temperature thermocouple is adjustable in 0-50cm；
Each described temperature thermocouple (3) is connected with a secondary meter；The secondary meter is by the temperature thermocouple (3)
The numerical value measured in real time passes the thermal field analog computing system in PC machine back by secondary meter array interface；
There is the interface for the quantity for being greater than temperature thermocouple (3) quantity at most loaded on the secondary meter array interface；
The thermal field analog computing system can receive and convert the real time temperature of all temperature thermocouples (3), and can be with
The mode that color and/or numerical value are shown shows the real time temperature state of all temperature thermocouples (3)；
The heat-resistant component is specifically the porcelain plunger of cylindrical cross-section.
3. a kind of thermal field analog analysing method of silicon carbide electric-resistivity method growth crystal, a kind of carbon according to claim 2
SiClx electric-resistivity method grows the annealing device of crystal to carry out, which comprises the following steps:
1) virtual seeding initial step: 4 rectangle heating plates (2) are axisymmetrically installed, overlook it evenly around insulation cover
(1) 4 rectangle heating plates (2) are heated under certain steady temperature between 500-800 DEG C by central distribution, open heat preservation
The upper cover for covering (1) protrudes into the base part of seeding device, closing heat preservation vertically downward from the upper opening of upper heating plate (2)
It covers (1), by least 20% extraction porcelain plunger in the 4 column through-hole and a temperature thermocouple (3) is filled in, by each reality
The temperature thermocouple (3) that border utilizes is connected with a secondary meter, and passes through the secondary meter for corresponding temperature thermocouple
(3) numerical value measured in real time passes the thermal field analog computing system in PC machine back by secondary meter array interface；In the thermal field
It is shown in 3 dimension display interfaces in analog computing system and adjusts each aforementioned practical temperature thermocouple (3) utilized in 3 dimensions
Display effect in display interface, and adjust to corresponding with physical location in 3 dimension display interfaces；
There is the interface for the quantity for being greater than temperature thermocouple (3) quantity at most loaded on the secondary meter array interface；
The thermal field analog computing system can receive and convert the real time temperature of all temperature thermocouples (3), and can be with
The mode that color and/or numerical value are shown shows the real time temperature state of all temperature thermocouples (3)；
4 rectangle heating plates (2) are heated under certain steady temperature between 1500-1800 DEG C, virtual seeding process is started；
2) it virtually anneals preparation process: after 10-20h, assert that seeding terminates, keep 4 rectangle heating plate (2) heating temperatures permanent
It is fixed, it is detached from and is withdrawn from the base part of seeding device, the upper cover of insulation cover (1) is closed, by 4 rectangle heating plates (2) with many
1500 DEG C are cooled in the time of 1h；
3) virtual annealing steps: sample is annealed since 1500 DEG C, and 4 rectangle heating plates (2) are uniformly with 50-60 DEG C/h's
Rate cooling, is cooled to 50 ° or less；
4) observation and analytical procedure: with real-time cooling data all in the thermal field analog computing system recording step (3), if
Setting 1500 DEG C-room temperature is the different transition interval of several colors, with different rates difference viewing angle replay procedure (3) repeatedly
Cooling in each temperature thermocouple (3) temperature variations, analyze that possible thermal field is uneven or unbalanced position, shape
At analysis report.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910123611.8A CN109913949A (en) | 2019-02-18 | 2019-02-18 | A kind of thermal field simulation system of silicon carbide electric-resistivity method growth crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910123611.8A CN109913949A (en) | 2019-02-18 | 2019-02-18 | A kind of thermal field simulation system of silicon carbide electric-resistivity method growth crystal |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732953A (en) * | 2011-04-12 | 2012-10-17 | 李汶军 | Technology and apparatus for growing single silicon carbide crystals through double seed crystal-assisted vapor transport method |
| US20140220296A1 (en) * | 2013-02-05 | 2014-08-07 | Dow Corning Corporation | Sic crystal and wafer cut from crystal with low dislocation density |
-
2019
- 2019-02-18 CN CN201910123611.8A patent/CN109913949A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732953A (en) * | 2011-04-12 | 2012-10-17 | 李汶军 | Technology and apparatus for growing single silicon carbide crystals through double seed crystal-assisted vapor transport method |
| US20140220296A1 (en) * | 2013-02-05 | 2014-08-07 | Dow Corning Corporation | Sic crystal and wafer cut from crystal with low dislocation density |
Non-Patent Citations (1)
| Title |
|---|
| 褚君浩等: "《半导体材料技术》", 28 February 2010 * |
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