CN109904217A - It is a kind of for the field limiting ring terminal structure of silicon carbide device, its production method and silicon carbide device - Google Patents
It is a kind of for the field limiting ring terminal structure of silicon carbide device, its production method and silicon carbide device Download PDFInfo
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- CN109904217A CN109904217A CN201910104626.XA CN201910104626A CN109904217A CN 109904217 A CN109904217 A CN 109904217A CN 201910104626 A CN201910104626 A CN 201910104626A CN 109904217 A CN109904217 A CN 109904217A
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- limiting ring
- field limiting
- silicon carbide
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- terminal structure
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 235000008429 bread Nutrition 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003471 anti-radiation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Abstract
The present invention discloses a kind of field limiting ring terminal structure for silicon carbide device, comprising: M field limiting ring, wherein the 1st field limiting ring is around the functional areas of silicon carbide device, m-th of field limiting ring is around (m-1) a field limiting ring；Wherein for the junction depth of m-th of field limiting ring less than the junction depth of (m-1) a field limiting ring, M, n are positive integer, and 2≤m≤M.The second aspect of the disclosure discloses a kind of production method of field limiting ring terminal structure for silicon carbide device.The third aspect of the disclosure discloses silicon carbide device.
Description
Technical field
The present invention relates to technical field of semiconductor device.More particularly, to a kind of field limiting ring for silicon carbide device
Junction termination structures, its production method and silicon carbide device.
Background technique
Currently, the level of traditional silicon substrate power electronic devices is maintained essentially at 109-1010WHz, approached because
Parasitic diode restricts and the limit of attainable silicon materials.And carbofrax material has excellent physically and electrically characteristic, with
The particular advantages such as its wide forbidden bandwidth, high thermal conductivity, big saturation drift velocity and high critical breakdown electric field, become system
Make the ideal semiconductor material of high-power, high frequency, high temperature resistant, anti-radiation device.
The breakdown voltage of silicon carbide power electronic device can reach ten times of silicon device, and conducting resistance is only silicon device
The one of tens of points.Due to the breakdown voltage of device depend greatly on knot curvature caused by edge strong electrical field, be
The electric field for alleviating the knot edge of surface termination is concentrated, and the actual breakdown voltage of device is improved, and needs to carry out device knot eventually
The design of end structure.Junction termination structures mainly include field plate (FP), field limiting ring (FLR), knot terminal extension (JTE) etc..
In planar junction termination technology, simple field plate techniques are limited to the promotion of pressure resistance, cannot reach resistance to pressure request；
The efficiency that JTE improves pressure resistance is very high, but too sensitive to parameters such as doping depth and concentration, is difficult to control；Field limiting ring technology
Resistance to pressure request can be reached, and can be formed simultaneously with functional areas, simple process is controllable, but the field limiting ring structure of single junction depth
Meeting prevent fringe field from effectively expanding to peripheral region.
Therefore, for above structure, a kind of field limiting ring terminal structure for silicon carbide device is needed, to enhance to function
Can area protection, and need to provide a kind of field limiting ring terminal structure for silicon carbide device production method and a kind of carbon
SiClx device so that while improving the breakdown voltage of device can also simplification of flowsheet, reduce technology difficulty and technique at
This.
Summary of the invention
The purpose of the present invention is to provide the silicon carbide fields that a kind of junction depth of field limiting ring is gradually reduced to the periphery from functional areas
Limit ring junction termination structures, its production method and silicon carbide device.
In order to achieve the above objectives, the present invention adopts the following technical solutions:
One aspect of the present invention provides a kind of field limiting ring terminal structure for silicon carbide device, comprising: M field limit
Ring, wherein the 1st field limiting ring is around the functional areas of silicon carbide device, m-th of field limiting ring is around (m-1) a field limiting ring；Wherein m
For the junction depth of a field limiting ring less than the junction depth of (m-1) a field limiting ring, M, n are positive integer, and 2≤m≤M.
Preferably, field limiting ring is that four sides surrounds functional areas, three bread enclose functional areas or two sides surrounds functional areas.
Preferably, 0.1 μm is gradually reduced to from the 1st field limiting ring to the junction depth of M field limiting ring from 1 μm.
Preferably, equally spaced from each other between field limiting ring or unequal spacing separates.
Preferably, spacing is 1 μm~5 μm.
The second aspect of the present invention provides a kind of production method of field limiting ring terminal structure for silicon carbide device,
It include: to form M field limiting ring around the functional areas of silicon carbide device, wherein the 1st field limiting ring is around functional areas, m-th of field limiting ring
Around (m-1) a field limiting ring；Wherein less than the junction depth of (m-1) a field limiting ring, M, n are positive whole the junction depth of m-th of field limiting ring
Number, and 2≤m≤M.
Preferably, forming M field limiting ring around the functional areas of silicon carbide device includes: to form epitaxial layer in the substrate,
The functional areas of silicon carbide device are formed in epitaxial layer；Photoresist is formed in epi-layer surface；Photoresist is carried out using mask
Photoetching forms mask layer, and wherein mask plate has spaced annular transparent area and opaque area, the wherein light transmission of transparent area
The density in hole increases with the distance for leaving mask center and is reduced；And ion implanting is carried out using the mask layer, thus
Form the M field limiting ring.
Preferably, ion implanting includes: the Al ion that different-energy and dosage combination are carried out at a temperature of 300~500 DEG C
Injection, Implantation Energy range are as follows: 10~700KeV, implantation dosage range are 1 × 1013~1 × 1015cm-2；1500 DEG C~
In 1700 DEG C of temperature ranges, the ion-activated annealing of Al of 10~30min is carried out in ar gas environment.
The third aspect of the application provides a kind of silicon carbide device, including aforementioned field limiting ring junction termination structures.
Beneficial effects of the present invention are as follows:
What the junction depth that technical solution of the present invention provides a kind of field limiting ring terminating end was gradually reduced to the periphery from functional areas
For the field limiting ring terminal structure of silicon carbide device, a kind of silicon carbide device including the field limiting ring terminal structure, and
The production method of silicon carbide field limiting ring junction termination structures can simplify process flow by this method, reduce technology difficulty and work
Skill cost.
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing；
Fig. 1 is the light according to used in the production method for the field limiting ring terminal structure of silicon carbide device of the application
Carve the structural schematic diagram of mask；And
Fig. 2 to Fig. 4 is each according to the production method of the field limiting ring terminal structure for silicon carbide device of the application
The exemplary sectional view of step.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
Referring to Fig. 1 to Fig. 4 detailed description according to the application for silicon carbide device field limiting ring terminal structure,
Its production method and include silicon carbide device according to the field limiting ring terminal structure for silicon carbide device of the application.
It include that (M is more than or equal to 2 to M field limiting ring in the field limiting ring terminal structure 3 of the silicon carbide device according to the application
Integer).It will be understood by those skilled in the art that for convenience of description with it is clear, in the example of Fig. 1 to Fig. 4, with field limiting ring
Number is illustrated for being 5, i.e., is used for silicon carbide device according in the embodiment of the disclosure of Fig. 1 to Fig. 4 description below
Field limiting ring terminal structure in the number of field limiting ring be 5.It will be understood by those skilled in the art that this is exemplary, root
It is not limited to this according to embodiments herein, the field limiting ring of other numbers can be designed according to the needs of practical application.
One embodiment of the disclosure is described in detail with reference to the accompanying drawings.Wherein, Fig. 4 is shown including according to the application's
The cross-sectional view of the silicon carbide device of exemplary silicon carbide field limiting ring terminal structure.
As shown in the figure, the silicon carbide device according to the application include functional areas and around functional areas 5 field limiting rings,
Functional areas are the region for playing device function.It will be understood by those skilled in the art that in this application, at least partly being wrapped around referring to
It encloses, for example, four sides surrounds, three bread enclose or two sides surrounds.
It is, the 1st field limiting ring is around functional areas 301, the 2nd field limiting ring 302 is around the 1st field limiting ring 301, the 3rd field limiting ring
303 around the 2nd field limiting ring 302, and the 4th field limiting ring 304 is around the 3rd field limiting ring 303, and the 5th field limiting ring 305 is around the 4th field limiting ring
304。
In 5 field limiting rings, the knot of the field limiting ring far from functional areas is greater than close to the junction depth of the field limiting ring of function area edge
It is deep.More specifically, 5 field limiting rings have the junction depth being gradually reduced from 301 to the 5th field limiting ring 305 of the 1st field limiting ring.It is,
The junction depth of 2nd field limiting ring 302 is less than the junction depth of the 1st field limiting ring 301, and the junction depth of the 3rd field limiting ring 303 is less than the 2nd field limiting ring 302
Junction depth, the junction depth of the 4th field limiting ring 304 is less than the junction depth of the 3rd field limiting ring 303, and the junction depth of the 5th field limiting ring 305 is less than the 4th field limiting ring
304 junction depth.It will be understood by those skilled in the art that the application is not intended to limit the variable quantity that the junction depth of field limiting ring reduces, it is preferable that
Designer can according to need, from the edge of functional areas to far from functional areas direction on, in the present embodiment for from the 1st
301 to the 5th field limiting ring 305 of field limiting ring enables respective junction depth be gradually reduced according to certain gradient.
Preferably, the junction depth of the junction depth of the 1st field limiting ring 301 to the 5th field limiting ring 305 can gradually be reduced to 0.1 μm from 1 μm.
In the present embodiment, 5 field limiting rings can separate each other, can be and be equally spaced apart from or unequal spacing separates,
Spacing is 1 μm~5 μm.
Through this structure, because junction depth is big, the protection to functional areas can reinforced at functional areas, and remote
From functional areas end, junction depth becomes smaller, and can reduce spike electric field herein, to improve the breakdown voltage of device.
Referring to Fig. 1 to Fig. 4 description showing according to the field limiting ring terminal structure for silicon carbide device of the application
Example property production method.
Firstly, the mask 10 that the needs of the field limiting ring terminal structure of description production the application silicon carbide device are used.
Referring to Fig.1, include spaced annular transparent area and opaque area in mask 10, due in this example with
The number of field limiting ring is 5 to illustrate.Be therefore, correspondingly, in the present embodiment, 101 including transparent area in mask 10,
102,……105.The number of transparent area is equal with the number for the field limiting ring that needs make.In addition, in this application, mask 10
Center be opaque area, opaque area is corresponding with the functional areas of the silicon carbide device needed to form.Transparent area 101 is around position
In the opaque area in center, from inside to outside, transparent area 101,102 ... 105 are separated out by opaque.It can be equally spaced apart from
It can also be separated with unequal spacing.
Transparent area 101,102 ... 105 light transmittance is different, transparent area 101,102 ... 105 light transmittance is by its packet
The density for including loophole determines.Transparent area 101,102 ... 105 light transmittance determines exposure size.The shape of loophole can
Think round, rectangular, triangle or other light-permeable shapes.Light transmittance as needed determines the Density Distribution of loophole, from
And control the metering of injection ion.As shown in Figure 1, in this application, the density of loophole with leave 10 center of mask away from
Reduce from increase.
Shown in Fig. 1 rectangular loop transparent area 101,102 ... 105.It will be understood by those skilled in the art that with this
The field limiting ring of application correspondingly, transparent area 101,102 ... 105 shape can also be on four sides around being located in mask 10
The opaque area of centre, three face rings are around the opaque area in the center for being located at mask 10 or two sides around positioned at mask 10
The opaque area in center.For example, in the plan view of mask 10, the shape of the transparent area presented can be rectangular, U-shaped or
V-type.Or other other annulars for meeting above-mentioned circular condition.
The process of the production method of the field limiting ring terminal structure for silicon carbide device according to the application is described below.
In step 1, epitaxial layer 1 is formed on the substrate, and on epitaxial layer 1 formed silicon carbide device functional areas (
Be not shown in Fig. 2), the conduction type of substrate type and epitaxial layer 1 can be identical, all can be the first conduction type, this field
It should be understood to the one skilled in the art that coating a layer photoresist on 1 surface of epitaxial layer, and light is carried out using the mask 10 designed in the application
Quarter, development and carbonization treatment.The different transmittancies being had based on 10 different zones of mask, photoresist corresponding region
Depth of exposure is different；Develop to the photoetching after exposure, forms the mask layer 2 of thickness change.It is different based on depth of exposure,
The photoresist of different zones has different corrosion conditions.Specifically, area light corresponding with area opaque in mask 10
Photoresist is fully retained, mask layer 2, with transparent area 101 in mask 10,102 ... 105 corresponding regions, depth of exposure
It is gradually decreased, the thickness of mask layer 2 with the reduction of light transmittance, from function area edge to the direction far from functional areas, mask
The thickness of layer 2 gradually increases.Barrier layer of the high temperature cabonization as ion implanting is carried out to mask layer 2.
In step 2, the second conduction type injection is carried out to the first conductivity type silicon carbide epitaxial layer, obtaining includes second
The field limiting ring terminal structure 3 that the field limiting ring 301 to 305 of the junction depth change of gradient of conduction type is constituted.Wherein, when the first conduction
When type is p-type, the second conduction type is N-type, and when the first conduction type is N-type, the second conduction type is p-type.Second leads
3 doping concentration of field limiting ring terminal structure of electric type can be greater than or equal to 1.0 × 1018cm-3。
The 1st field limiting ring formed is around functional areas 301, and the 2nd field limiting ring 302 is around the 1st field limiting ring 301, the 3rd field limiting ring
303 around the 2nd field limiting ring 302, and the 4th field limiting ring 304 is around the 3rd field limiting ring 303, and the 5th field limiting ring 305 is around the 4th field limiting ring
304。
In 5 field limiting rings, the knot of the field limiting ring far from functional areas is greater than close to the junction depth of the field limiting ring of function area edge
It is deep.More specifically, 5 field limiting rings have the junction depth being gradually reduced from 301 to the 5th field limiting ring 305 of the 1st field limiting ring.It is,
The junction depth of 2nd field limiting ring 302 is less than the junction depth of the 1st field limiting ring 301, and the junction depth of the 3rd field limiting ring 303 is less than the 2nd field limiting ring 302
Junction depth, the junction depth of the 4th field limiting ring 304 is less than the junction depth of the 3rd field limiting ring 303, and the junction depth of the 5th field limiting ring 305 is less than the 4th field limiting ring
304 junction depth.It will be understood by those skilled in the art that the application is not intended to limit the variable quantity that the junction depth of field limiting ring reduces, it is preferable that
Designer can according to need, from the edge of functional areas to far from functional areas direction on, in the present embodiment for from the 1st
301 to the 5th field limiting ring 305 of field limiting ring enables respective junction depth be gradually reduced according to certain gradient.
Preferably, junction depth can gradually be reduced to 0.1 μm from 1 μm.It should be understood that this is only illustratively, and to be not limited to
This, can according to need appropriate adjustment doping concentration and junction depth.Field limiting ring 301 to 305, which can be, to be equally spaced apart from or not
It is equally spaced apart from, spacing is 1 μm~5 μm.
Specifically, the Al ion implanting of different-energy and dosage combination can be carried out at a temperature of 300 DEG C~500 DEG C, infused
Enter energy range are as follows: 10~700KeV, implantation dosage range are 1 × 1013~1 × 1015cm-2.Preferably, at a temperature of 400 DEG C
The Al ion implanting of different-energy and dosage combination is carried out, Implantation Energy is respectively as follows: 500KeV, 280KeV, 30KeV, injectant
Amount is respectively 7.8 × 1014cm-2、5.2×1014cm-2、8.6×1013cm-2；In 1500 DEG C~1700 DEG C temperature ranges, argon gas
In environment carry out 10~30min the ion-activated annealing of Al, obtain the second conduction type junction depth change of gradient field limiting ring 301 to
305 field limiting ring terminal structure 3.
In step 4, as shown in figure 3, removing remaining mask layer 2 on silicon carbide device surface.
In steps of 5, cathode and anode electrode, the silicon carbide device obtained through the method are made, including is located at functional areas
The field limiting ring terminal structure 3 that the junction depth of periphery is gradually reduced.
What it is according to the application includes that the silicon carbide device of field limiting ring terminal structure for silicon carbide device can lean on
The junction depth of the field limiting ring of the functional areas of nearly device is big, to enhance the protection to device function area, in the functional areas far from device
Field limiting ring junction depth is small, reduces spike electric field herein.And by production method as above, the complexity and difficulties of technique are reduced,
It is easy to industrialization.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (9)
1. a kind of field limiting ring terminal structure for silicon carbide device characterized by comprising
M field limiting ring, wherein the 1st field limiting ring is around the functional areas of the silicon carbide device, m-th of field limiting ring is around (m-1)
A field limiting ring；
Wherein for the junction depth of m-th of field limiting ring less than the junction depth of (m-1) a field limiting ring, M, n are positive integer, and 2≤m≤M.
2. field limiting ring terminal structure as described in claim 1, which is characterized in that the field limiting ring is that four sides surrounds the function
Energy area, three bread enclose the functional areas or two sides surrounds the functional areas.
3. field limiting ring terminal structure as described in claim 1, which is characterized in that
0.1 μm is gradually reduced to from 1 μm from the junction depth of the 1st field limiting ring to the M field limiting ring.
4. field limiting ring terminal structure as described in claim 1, which is characterized in that it is equally spaced from each other between the field limiting ring or
Unequal spacing separates.
5. field limiting ring terminal structure as claimed in claim 4, which is characterized in that the spacing is 1 μm~5 μm.
6. a kind of production method of the field limiting ring terminal structure for silicon carbide device characterized by comprising
The functional areas of the circular silicon carbide device form M field limiting ring, wherein the circular functional areas of the 1st field limiting ring, m-th
Field limiting ring is around (m-1) a field limiting ring；
Wherein for the junction depth of m-th of field limiting ring less than the junction depth of (m-1) a field limiting ring, M, n are positive integer, and 2≤m≤M.
7. production method as claimed in claim 6, which is characterized in that the functional areas around the silicon carbide device are formed
M field limiting ring include:
Epitaxial layer is formed in the substrate；
The functional areas of the silicon carbide device are formed in the epitaxial layer；
Photoresist is formed in the epi-layer surface；
Photoetching is carried out to the photoresist using mask, forms mask layer, wherein the mask plate has spaced ring
Shape transparent area and opaque area, wherein the density of the loophole of transparent area increases with the distance for leaving the mask center and is subtracted
It is small；And
Ion implanting is carried out using the mask layer, to form the M field limiting ring.
8. production method as claimed in claim 7, which is characterized in that the ion implanting includes:
The Al ion implanting of different-energy and dosage combination, Implantation Energy range are carried out at a temperature of 300~500 DEG C are as follows: 10~
700KeV, implantation dosage range are 1 × 1013~1 × 1015cm-2；
In 1500 DEG C~1700 DEG C temperature ranges, the ion-activated annealing of Al of 10~30min is carried out in ar gas environment.
9. a kind of silicon carbide device, including field limiting ring terminal structure according to any one of claims 1 to 5.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910104626.XA CN109904217A (en) | 2019-02-01 | 2019-02-01 | It is a kind of for the field limiting ring terminal structure of silicon carbide device, its production method and silicon carbide device |
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| CN201910104626.XA CN109904217A (en) | 2019-02-01 | 2019-02-01 | It is a kind of for the field limiting ring terminal structure of silicon carbide device, its production method and silicon carbide device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060043480A1 (en) * | 2004-09-01 | 2006-03-02 | Kabushiki Kaisha Toshiba | Semiconductor device and fabrication method of the same |
| KR20170045837A (en) * | 2015-10-20 | 2017-04-28 | 한국전기연구원 | Power semiconductor device and a method of manufacturing the same electric field limiting ring is formed |
| CN209658180U (en) * | 2019-02-01 | 2019-11-19 | 北京燕东微电子有限公司 | A kind of field limiting ring terminal structure and silicon carbide device for silicon carbide device |
-
2019
- 2019-02-01 CN CN201910104626.XA patent/CN109904217A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060043480A1 (en) * | 2004-09-01 | 2006-03-02 | Kabushiki Kaisha Toshiba | Semiconductor device and fabrication method of the same |
| KR20170045837A (en) * | 2015-10-20 | 2017-04-28 | 한국전기연구원 | Power semiconductor device and a method of manufacturing the same electric field limiting ring is formed |
| CN209658180U (en) * | 2019-02-01 | 2019-11-19 | 北京燕东微电子有限公司 | A kind of field limiting ring terminal structure and silicon carbide device for silicon carbide device |
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