CN109904114A - A kind of laser processing of through-hole - Google Patents
A kind of laser processing of through-hole Download PDFInfo
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- CN109904114A CN109904114A CN201910127720.7A CN201910127720A CN109904114A CN 109904114 A CN109904114 A CN 109904114A CN 201910127720 A CN201910127720 A CN 201910127720A CN 109904114 A CN109904114 A CN 109904114A
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Abstract
The present invention provides a kind of laser processings of through-hole, the layers of copper of its laser activation can prevent from making upper through-hole aperture difference away from larger when secondary undercutting, the aperture for overcoming through-hole top caused by a step in the prior art directly drills is wide, is not able to satisfy the needs of biggish depth-width ratio；And the layers of copper of activation can be used as the seed layer of subsequent plating, and by the layers of copper of laser activation, surface roughness is larger, have good adhesive force.
Description
Technical field
The present invention relates to semiconductor workpiece manufacture fields, belong under classification number H01L23/00, and specially a kind of through-hole swashs
Light processing method.
Background technique
In manufacture of semiconductor, the intercommunication up and down between substrate or device is interconnected, and generally requires through-hole to realize.Due to size
It is gradually reduced, the through-hole of lesser depth-width ratio (section) can no longer meet size needs.As shown in Fig. 3, in laser drill
In the process, due to higher in part (top surface of the substrate 10) temperature for starting undercutting, undercutting is too fast, the sidewall sections of upper part
It will receive lasting high temperature, if continuing undercutting according to situation shown in Fig. 3, the lead to the hole site of 10 summit portion of substrate
Aperture will be much larger than the aperture of the lead to the hole site of the substrate floor part.This is totally unfavorable in actual production.
Summary of the invention
Based on solving the above problems, the present invention provides a kind of laser processings of through-hole, include the following steps:
(1) semiconductor substrate hole to be drilled is provided, there is opposite front and back；
(2) go out blind hole using laser undercutting over the substrate, the blind hole does not run through the substrate and has the first aperture D；
(3) filling can activate copper organic matter in the blind hole；
(4) using blind hole described in above-mentioned laser irradiation, so that the organic matter activated in copper organic matter volatilizees, and described
The side wall of blind hole leaves the layers of copper of activation；
(5) continue blind via bottom described in undercutting using above-mentioned laser until formation through hole is described to pass through through the substrate
Through-hole has the second aperture r；
(6) filling conductive materials form final through-hole in the through hole.
According to an embodiment of the invention, the energy of the laser in the step (4) is less than the laser energy in the step (5)
Amount.
According to an embodiment of the invention, wherein, the first r of aperture D > the 2nd.
According to an embodiment of the invention, wherein, 10 μm≤D≤25 μm, 5 μm≤r≤15 μm.
According to an embodiment of the invention, the thickness of the layers of copper of the activation is less than or equal to 2 μm.
According to an embodiment of the invention, filling conductive materials include electro-coppering, electronickelling etc. in the step (6).
According to an embodiment of the invention, the roughness of the layers of copper of the activation is greater than 0.05 μm.
According to an embodiment of the invention, the specific method for forming through hole in the step (5) includes: the energy for increasing laser
Amount, so that laser beam is directed at the bottom of the blind hole, the layers of copper of the activation prevents laser to blind hole side wall as protective layer
Further ablation, until complete undercutting runs through the substrate.
Advantages of the present invention is as follows: the layers of copper of laser activation can prevent from making when secondary undercutting upper through-hole aperture difference away from
Larger, the aperture for overcoming through-hole top caused by a step in the prior art directly drills is wide, is not able to satisfy biggish high wide
The needs of ratio；And the layers of copper of activation can be used as the seed layer of subsequent plating, and by the layers of copper of laser activation, surface is thick
Rugosity is larger, has good adhesive force.
Detailed description of the invention
Fig. 1-7 is the schematic diagram of the laser processing of through-hole of the invention.
Specific embodiment
The purpose of the present invention is to provide a kind of processing method of through holes of high vertical wide ratio.
Referring to Fig. 1-7, the laser processing of through-hole of the invention includes the following steps:
Referring to Fig. 1, a semiconductor substrate 10 hole to be drilled is provided, there is opposite front and back；The substrate 10 is generally
Silicon substrate is also possible to substrate, gallium nitride substrate etc. containing arsenic, could be formed with active device thereon, such as MOS etc. can also
To be formed with passive device, such as MIM capacitor, resistor etc..The pre-formed through-hole is generally through hole.
Referring to fig. 2, go out blind hole 11 using laser undercutting on the substrate 10, the blind hole 11 does not run through the substrate 10
And there is the first aperture D；The first aperture D is usually lesser compared to existing through-hole, the bottom end of the blind hole be it is lesser,
Aperture does not illustrate individually.The laser drilling etching technique is using conventional He-Ne laser etc..
Referring to Fig. 3, filling can activate copper organic matter 12 in the blind hole 11；This can activate organic in copper organic matter 12
Object part can carry out hot volatilization by the energy of laser, and the complex compound of copper can be reduced to form copper via laser.Filling
It can be carried out by the way of deposition, spin coating, coating.
Referring to fig. 4,5, using blind hole 11 described in above-mentioned laser irradiation so that it is described activate it is organic in copper organic matter 12
Object volatilization, and the layers of copper 15 of activation is left in the side wall of the blind hole 11；As shown in figure 4, laser 13 can with made in Fig. 2
Laser is consistent, and only power and energy difference, emit laser 14 in Fig. 4, and the energy of the laser 14 is less than in Fig. 2
Form the energy of blind hole 11.The thickness of the layers of copper 15 of the activation is less than or equal to 2 μm, and the layers of copper 15 which obtains is thick
Rugosity is often larger, is conducive to adhesive force, and the roughness of the layers of copper 15 of the activation is greater than 0.05 μm.
Referring to Fig. 6, continue 11 bottom of blind hole described in undercutting using above-mentioned laser 14 until running through the substrate 10, shape
At through hole 16, the through hole 16 has the second aperture r；The laser energy of blind hole 11 is formed in the energy and Fig. 2 of the laser
Unanimously, but it is greater than the laser energy of activation used in Fig. 4.In specific operation process, as long as having activated layers of copper and having waved
After distributing organic matter, the energy of laser is increased, so that laser beam is directed at the bottom of the blind hole 11, the layers of copper 15 of the activation is made
For protective layer, further ablation of the laser to 11 side wall of blind hole is prevented, until complete undercutting runs through the substrate 10.Wherein,
One r of aperture D > the 2nd；Wherein, 10 μm≤D≤25 μm, 5 μm≤r≤15 μm.
Referring to Fig. 7, conductive materials are filled in the through hole 16 and form final through-hole 17.Filling conductive materials includes
Electro-coppering, electronickelling etc..
Certainly, the above method is used in preferably relatively thin substrate, often can multiple undercutting when substrate is thicker
Form multiple blind holes, repeatedly filling can activate copper organic matter 12, repeatedly activation formed it is multiple up and down interconnect layers of copper, with formed compared with
Deep through-hole.
Finally, it should be noted that obviously, the above embodiment is merely an example for clearly illustrating the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Other various forms of variations or variation out.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
The obvious changes or variations that Shen goes out are still in the protection scope of this invention.
Claims (8)
1. a kind of laser processing of through-hole, includes the following steps:
(1) semiconductor substrate hole to be drilled is provided, there is opposite front and back；
(2) go out blind hole using laser undercutting over the substrate, the blind hole does not run through the substrate and has the first aperture D；
(3) filling can activate copper organic matter in the blind hole；
(4) using blind hole described in above-mentioned laser irradiation, so that the organic matter activated in copper organic matter volatilizees, and described
The side wall of blind hole leaves the layers of copper of activation；
(5) continue blind via bottom described in undercutting using above-mentioned laser until formation through hole is described to pass through through the substrate
Through-hole has the second aperture r；
(6) filling conductive materials form final through-hole in the through hole.
2. the laser processing of through-hole according to claim 1, it is characterised in that: laser in the step (4)
Energy is less than the laser energy in the step (5).
3. the laser processing of through-hole according to claim 1, it is characterised in that: wherein, the first r of aperture D > the 2nd.
4. the laser processing of through-hole according to claim 1, it is characterised in that: wherein, 10 μm≤D≤25 μm, 5 μm
≤r≤15μm。
5. the laser processing of through-hole according to claim 1, it is characterised in that: the thickness of the layers of copper of the activation is small
In or equal to 2 μm.
6. the laser processing of through-hole according to claim 1, it is characterised in that: filling is led in the step (6)
Isoelectric substance includes electro-coppering, electronickelling etc..
7. the laser processing of through-hole according to claim 1, it is characterised in that: the roughness of the layers of copper of the activation
Greater than 0.05 μm.
8. the laser processing of through-hole according to claim 1, it is characterised in that: form perforation in the step (5)
The specific method in hole includes: the energy for increasing laser, so that laser beam is directed at the bottom of the blind hole, the layers of copper of the activation is made
For protective layer, further ablation of the laser to blind hole side wall is prevented, until complete undercutting runs through the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910127720.7A CN109904114B (en) | 2019-02-26 | 2019-02-26 | Laser processing method of through hole |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910127720.7A CN109904114B (en) | 2019-02-26 | 2019-02-26 | Laser processing method of through hole |
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| CN109904114A true CN109904114A (en) | 2019-06-18 |
| CN109904114B CN109904114B (en) | 2021-03-19 |
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Citations (7)
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|---|---|---|---|---|
| CN1294540A (en) * | 1999-02-25 | 2001-05-09 | 精工爱普生株式会社 | Method for machining work by laser beam |
| US6593246B1 (en) * | 1999-03-15 | 2003-07-15 | Sony Corporation | Process for producing semiconductor device |
| CN102751236A (en) * | 2012-06-27 | 2012-10-24 | 上海宏力半导体制造有限公司 | Method for forming interconnection structure |
| CN103659000A (en) * | 2013-11-25 | 2014-03-26 | 昆山鼎鑫电子有限公司 | Substrate layer laser drilling method and substrate used in method |
| CN106298634A (en) * | 2015-05-15 | 2017-01-04 | 中国科学院金属研究所 | The method for filling through hole of a kind of oriented growth nano twin crystal copper and application thereof |
| CN106571334A (en) * | 2016-10-26 | 2017-04-19 | 上海集成电路研发中心有限公司 | Silicon wafer hybrid bonding method |
| US20170317025A1 (en) * | 2016-03-22 | 2017-11-02 | International Business Machines Corporation | Structure and method for maximizing air gap in back end of the line interconnect through via landing modification |
-
2019
- 2019-02-26 CN CN201910127720.7A patent/CN109904114B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1294540A (en) * | 1999-02-25 | 2001-05-09 | 精工爱普生株式会社 | Method for machining work by laser beam |
| US6593246B1 (en) * | 1999-03-15 | 2003-07-15 | Sony Corporation | Process for producing semiconductor device |
| CN102751236A (en) * | 2012-06-27 | 2012-10-24 | 上海宏力半导体制造有限公司 | Method for forming interconnection structure |
| CN103659000A (en) * | 2013-11-25 | 2014-03-26 | 昆山鼎鑫电子有限公司 | Substrate layer laser drilling method and substrate used in method |
| CN106298634A (en) * | 2015-05-15 | 2017-01-04 | 中国科学院金属研究所 | The method for filling through hole of a kind of oriented growth nano twin crystal copper and application thereof |
| US20170317025A1 (en) * | 2016-03-22 | 2017-11-02 | International Business Machines Corporation | Structure and method for maximizing air gap in back end of the line interconnect through via landing modification |
| CN106571334A (en) * | 2016-10-26 | 2017-04-19 | 上海集成电路研发中心有限公司 | Silicon wafer hybrid bonding method |
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Effective date of registration: 20210114 Address after: 518000 5th floor, building B4, xujingchang Industrial Park, No. 39, Haoye Road, Xinhe community, Fuhai street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Xinghan Laser Technology Co.,Ltd. Address before: 506, building 2, Northwest District, Suzhou nano City, 99 Jinjihu Avenue, Suzhou Industrial Park, Jiangsu Province Applicant before: SUZHOU FTI Co.,Ltd. |
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