CN109904071A - A kind of high power device and preparation method thereof based on self termination transfer - Google Patents
A kind of high power device and preparation method thereof based on self termination transfer Download PDFInfo
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Abstract
The present invention relates to a kind of high power devices and preparation method thereof based on self termination transfer, this method comprises: preparation first structure, the first structure includes the substrate layer stacked gradually, GaN buffer layer, AlGaN self-stopping technology layer, GaN channel layer and AlGaN potential barrier；The AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure；The substrate layer for removing second structure forms third structure；The GaN buffer layer for removing the third structure forms the 4th structure；The AlGaN self-stopping technology layer for removing the 4th structure forms hetero-junctions；Source electrode, drain electrode and gate electrode are formed in the GaN channel layer of the hetero-junctions.Preparation method provided in an embodiment of the present invention introduces AlGaN self-stopping technology layer, due to etching gas SF6:BCl3Proportion can not etch the AlGaN self-stopping technology layer, therefore self termination is realized in etching GaN trenches, and etching depth and roughness can be accurately controlled using slow rate etching.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to it is a kind of based on self termination transfer high power device and
Preparation method.
Background technique
Due to millimeter wave frequency band bandwidth with higher and anti-attenuation characteristic, millimetric wave device obtains in systems in recent years
It is widely applied.In national defense applications field, it is logical that large capacity terrestrial repetition may be implemented using the characteristics of millimeter-wave frequency high bandwidth
News, in civil field, millimeter-wave systems can be applied to multi-frequency multi-mode transceiver, meet the needs of its ultra-wideband.GaN base HEMT
(High Electron Mobility Transistor, high electron mobility transistor) device has high working frequency, big function
Rate, efficient feature make it have very big advantage in Millimeter Wave Applications.
The GaN base millimeter wave power device of comparative maturity mainly uses the face Ga GaN HEMT structure both at home and abroad at present, high-quality
The face the Ga heterogenous junction epitaxy material of amount guarantees that device has the power density of 6W/mm or more at Ka wave band (26.5~40GHz).Mesh
The preceding face Ga in the world GaN HEMT power density best result under 94GHz frequency is 3W/mm, the obvious drop compared with Ka wave band
It is low.Is reduced by grid and channel distance only needs to reduce GaN ditch since channel is in the top of barrier layer by the face N GaN base HEMT
The thickness of channel layer, and barrier layer still remains unchanged, the influence very little to Two-dimensional electron concentration, therefore the influence to output power
Also smaller, power density reaches 7.94W/mm under 94GHz frequency.
The face N GaN base HEMT conventional at present is unable to accurately control depth and coarse etching to be thinned in GaN trenches
Degree, causes device grids and two-dimensional electron gas distance is unable to accurately control and the problems such as surface undulation is larger.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of big function based on self termination transfer
Rate device and preparation method thereof.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of preparation method of high power device based on self termination transfer, this method packets
It includes:
First structure is prepared, the first structure includes the substrate layer stacked gradually, GaN buffer layer, AlGaN self-stopping technology
Layer, GaN channel layer and AlGaN potential barrier；
The AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure；
The substrate layer for removing second structure forms third structure；
The GaN buffer layer for removing the third structure forms the 4th structure；
The AlGaN self-stopping technology layer for removing the 4th structure forms hetero-junctions；
Source electrode, drain electrode and gate electrode are formed in the GaN channel layer of the hetero-junctions.
In one embodiment of the invention, first structure is prepared, comprising:
Using mocvd method, the GaN buffer layer is successively grown on the substrate layer, is grown on the GaN buffer layer
The AlGaN self-stopping technology layer grows the GaN channel layer on the AlGaN self-stopping technology layer, raw on the GaN channel layer
The long AlGaN potential barrier.
In one embodiment of the invention, the AlGaN potential barrier of the first structure is bonded on slide glass and forms
Two structures, comprising:
It carries out being thermally formed bonded layer after spin coating hydrogen silicon silsequioxane on the slide glass；
The AlGaN potential barrier of the first structure is bonded in after the bonded layer and forms second structure.
In one embodiment of the invention, the substrate layer for removing second structure forms third structure, comprising:
Using dry etching method, the third structure is formed after the substrate layer of second structure is etched.
In one embodiment of the invention, the GaN buffer layer for removing the third structure forms the 4th structure, comprising:
Using dry etching method, after being passed through etching gas, after the GaN buffer layer of the third structure is etched described in formation
4th structure.
In one embodiment of the invention, the etching gas is SF6And BCl3Mixed gas.
In one embodiment of the invention, the AlGaN self-stopping technology layer for removing the 4th structure forms hetero-junctions, packet
It includes:
Using dry etching method, the hetero-junctions is formed after the AlGaN self-stopping technology layer of the 4th structure is etched.
In one embodiment of the invention, source electrode, drain electrode and grid electricity are formed in the GaN channel layer of the hetero-junctions
Pole, comprising:
In GaN channel layer surface difference photolithographic source electrode zone, drain regions and the gate electrode region of the hetero-junctions；
Formed after the first metal layer is precipitated in the source electrode region and the drain regions respectively the source electrode and
The drain electrode；
The gate electrode is formed after second metal layer is precipitated in the gate electrode region.
The embodiment of the present invention also provide it is a kind of based on self termination transfer high power device, comprising: slide glass, bonded layer,
AlGaN potential barrier, GaN channel layer, source electrode, drain electrode and gate electrode, wherein
The slide glass, the bonded layer, the AlGaN potential barrier, the GaN channel layer stack gradually from bottom to top, institute
It states source electrode, the drain electrode and the gate electrode to be respectively positioned on the GaN channel layer, the high power device is by above-mentioned any
One embodiment preparation method prepares to be formed.
Compared with prior art, beneficial effects of the present invention:
Preparation method provided in an embodiment of the present invention introduces AlGaN self-stopping technology layer while not influencing material parameter,
Due to etching gas SF6:BCl3Proportion can not etch the AlGaN self-stopping technology layer, therefore it is real in etching GaN trenches
Existing self termination, and etching depth and roughness can be accurately controlled using slow rate etching.
Through the following detailed description with reference to the accompanying drawings, other aspects of the invention and feature become obvious.But it should know
Road, which is only the purpose design explained, not as the restriction of the scope of the present invention, this is because it should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they only try hard to concept
Ground illustrates structure and process described herein.
Detailed description of the invention
Fig. 1 is that a kind of preparation method process of high power device based on self termination transfer provided in an embodiment of the present invention is shown
It is intended to；
Fig. 2 is a kind of face Ga GaN base structural schematic diagram provided in an embodiment of the present invention；
Fig. 3 is a kind of face N GaN base structural schematic diagram provided in an embodiment of the present invention；
Fig. 4 a~4e is a kind of preparation process of high power device based on self termination transfer provided in an embodiment of the present invention
Flow chart；
Fig. 5 is a kind of structural schematic diagram of high power device based on self termination transfer provided in an embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is please referred to, Fig. 1 is a kind of preparation of high power device based on self termination transfer provided in an embodiment of the present invention
Method flow schematic diagram, the preparation method include the following steps:
Step 1, preparation first structure, the first structure include the substrate layer stacked gradually, GaN buffer layer, AlGaN from
Stop-layer, GaN channel layer and AlGaN potential barrier.
Specifically, Si is chosen as substrate layer, utilizes Metalorganic Chemical Vapor Deposition (Metal Organic
Chemical Vapor Deposition, MOCVD), control reaction chamber temperature is 900 DEG C, is grown on the Si substrate layer
GaN buffer layer；
Using mocvd method, controlling reaction chamber temperature is 920 DEG C, and AlGaN self-stopping technology layer is grown on the GaN buffer layer；
Using mocvd method, controlling reaction chamber temperature is 900 DEG C, and GaN channel layer is grown on the AlGaN self-stopping technology layer；
Using mocvd method, controlling reaction chamber temperature is 930 DEG C, grows AlGaN potential barrier on the GaN channel layer.
Preferably, the first structure is the face Ga GaN base structure.
Further, Fig. 2 is referred to, Fig. 2 is a kind of face Ga GaN base structural schematic diagram provided in an embodiment of the present invention, institute
The face Ga GaN base structure is stated, from bottom to top successively includes Si substrate layer 1, GaN buffer layer 2, AlGaN self-stopping technology layer 3, GaN channel
Layer 4, AlGaN potential barrier 5.
Specifically, the Si substrate layer 1 with a thickness of 350~420 μm, the GaN buffer layer 2 with a thickness of 300~
800nm, the AlGaN self-stopping technology layer 3 with a thickness of 5~20nm, the GaN channel layer 4 with a thickness of 30~70nm, it is described
AlGaN potential barrier 5 with a thickness of 5~20nm.
Further, in the AlGaN self-stopping technology layer 3, Al component is 20%~40%；
In the AlGaN potential barrier 5, Al component is 25%~40%.
The AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure by step 2.
Specifically, the AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure, comprising:
It carries out being thermally formed bonded layer after spin coating hydrogen silicon silsequioxane on the slide glass.
Further, the bonded layer formation process process are as follows: one layer of HSQ (hydrogen of spin coating on the slide glass
Silsesquioxane, hydrogen silicon silsequioxane) as transfer insert layer, the transfer insert layer is put into bonder,
It keeps heating 30 minutes at 101.3 kPas of normal pressure, 830 DEG C of temperature and can form bonded layer.
The AlGaN potential barrier of the first structure is bonded in after the bonded layer and forms second structure.
Specifically, it is bonded in after the bonded layer after the AlGaN potential barrier of the first structure being overturn 180 ° and forms institute
State the second structure.
Preferably, second structure is the face N GaN base structure.
Fig. 3 is referred to, Fig. 3 is a kind of face N GaN base structural schematic diagram provided in an embodiment of the present invention.
Specifically, the face the N GaN base structure successively includes slide glass 7, bonded layer 6, AlGaN potential barrier 5, GaN from bottom to top
Channel layer 4, AlGaN self-stopping technology layer 3, GaN buffer layer 2, Si substrate layer 1.
Preferably, the bonded layer 6 is with a thickness of 50~100nm.
The slide glass 7 can be Si, sapphire, SiC or diamond, and the slide glass 7 is with a thickness of 300~800 μm.
Step 3, the substrate layer formation third structure of removal second structure.
Specifically, the substrate layer for removing second structure forms third structure, comprising:
Using dry etching method, the third structure is formed after the substrate layer of second structure is etched.
Fig. 4 a~4e is referred to, for a kind of system of the high power device based on self termination transfer provided in an embodiment of the present invention
Standby process flow chart.
Fig. 4 a is referred to, specifically, using the method for dry etching, in ICP (Inductively Coupled
Plasma, inductively coupled plasma) in etching apparatus, it is passed through etching gas SF6, the etching gas SF6Flow is
50sccm, keeping the pressure of the ICP etching apparatus is 5mTorr, and the power of the ICP etching apparatus is 300W, the ICP
RF (radio frequency) power of etching apparatus is 20W, and etch rate is 50nm/ minutes, after the substrate layer 1 of second structure is etched
Form the third structure.
Step 4, GaN buffer layer the 4th structure of formation of the removal third structure.
Specifically, the GaN buffer layer for removing the third structure forms the 4th structure, comprising:
Using dry etching method, after being passed through etching gas, after the GaN buffer layer of the third structure is etched described in formation
4th structure.
Preferably, the etching gas is SF6And BCl3Mixed gas.
Specifically, Fig. 4 b is referred to, using the method for dry etching, in ICP etching apparatus, is passed through etching gas SF6:
BCl3, the etching gas SF6:BCl3Flowrate proportioning be 50:20sccm, keep the pressure of the ICP etching apparatus to be
5mTorr, the power of the ICP etching apparatus are 100W, and the RF power of the ICP etching apparatus is 10W, and etch rate is
50nm/ minutes, the 4th structure was formed after the GaN buffer layer 2 of the third structure is etched.
Due to the etching gas SF6:BCl3Proportion can not etch the AlGaN self-stopping technology layer 3, therefore, this step etching
It is automatically stopped when to the AlGaN self-stopping technology layer, realizes self termination of the invention.
The AlGaN self-stopping technology layer formation hetero-junctions of step 5, removal the 4th structure.
Specifically, the AlGaN self-stopping technology layer for removing the 4th structure forms hetero-junctions, comprising:
Using dry etching method, the hetero-junctions is formed after the AlGaN self-stopping technology layer of the 4th structure is etched.
Further, Fig. 4 c is referred to, is passed through etching gas in ICP etching apparatus using the method for dry etching
BCl3, the etching gas BCl3Flow is 50sccm, and keeping the ICP etching apparatus pressure is 5mTorr, the ICP etching
The power of equipment is 80W, and the RF power of the ICP etching apparatus is 10W, is etched using slow rate, and etch rate is 3nm/ points
Clock forms the hetero-junctions after etching the AlGaN self-stopping technology layer 3 of the 4th structure.
Preferably, the hetero-junctions successively includes slide glass 7, bonded layer 6, AlGaN potential barrier 5 and GaN channel from bottom to top
Layer 4.
Further, the advantages of slow rate etches is to be easy accurate control etching depth and roughness.
Step 6, GaN channel layer formation source electrode, drain electrode and gate electrode in the hetero-junctions.
Specifically, source electrode, drain electrode and gate electrode are formed in the GaN channel layer of the hetero-junctions, comprising:
In GaN channel layer surface difference photolithographic source electrode zone, drain regions and the gate electrode region of the hetero-junctions；
Formed after the first metal layer is precipitated in the source electrode region and the drain regions respectively the source electrode and
The drain electrode；
The gate electrode is formed after second metal layer is precipitated in the gate electrode region.
Further, Fig. 4 d is referred to, the source electrode region described in the GaN channel layer surface photoetching of the hetero-junctions and institute
It states drain regions, and precipitates the first metal layer in the source electrode region and the drain regions, and by first gold medal
Belong to after layer heats 30 seconds at a temperature of 830 DEG C and forms the source electrode and the drain electrode.
Preferably, the first metal layer stacks gradually as Ti/Al/Ni/Au, corresponding with a thickness of 22/140/55/45nm.
Fig. 4 e is referred to, specifically, the gate electrode region described in the GaN channel layer surface photoetching of the hetero-junctions, and
Second metal layer is precipitated in the gate electrode region, and forms institute after the second metal layer is heated 30 seconds at a temperature of 830 DEG C
State gate electrode.
Preferably, the second metal layer stacks gradually as Ni/Au, corresponding with a thickness of 20/200nm.
Embodiment two
Referring once again to Fig. 1, which includes the following steps:
Step 1, preparation first structure, the first structure include the substrate layer stacked gradually, GaN buffer layer, AlGaN from
Stop-layer, GaN channel layer and AlGaN potential barrier.
Specifically, Si is chosen as substrate layer, and using mocvd method, controlling reaction chamber temperature is 900 DEG C, is served as a contrast in the Si
GaN buffer layer is grown on bottom；
Using mocvd method, controlling reaction chamber temperature is 920 DEG C, and AlGaN self-stopping technology layer is grown on the GaN buffer layer；
Using mocvd method, controlling reaction chamber temperature is 900 DEG C, and GaN channel layer is grown on the AlGaN self-stopping technology layer；
Using mocvd method, controlling reaction chamber temperature is 930 DEG C, grows AlGaN potential barrier on the GaN channel layer.
Preferably, the first structure is the face Ga GaN base structure.
Further, referring again to Fig. 2, the face the Ga GaN base structure, successively include from bottom to top Si substrate layer 1,
GaN buffer layer 2, AlGaN self-stopping technology layer 3, GaN channel layer 4, AlGaN potential barrier 5.
Specifically, the Si substrate layer 1 with a thickness of 350 μm, the GaN buffer layer 2 with a thickness of 300nm, it is described
AlGaN self-stopping technology layer 3 with a thickness of 5nm, the GaN channel layer 4 with a thickness of 30nm, the AlGaN potential barrier 5 with a thickness of
5nm。
Further, in the AlGaN self-stopping technology layer 3, Al component is 20%~40%；
In the AlGaN potential barrier 5, Al component is 25%~40%.
The AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure by step 2.
Specifically, the AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure, comprising:
It carries out being thermally formed bonded layer after spin coating hydrogen silicon silsequioxane on the slide glass.
Further, the bonded layer formation process process are as follows: one layer of HSQ of spin coating is as transfer insertion on the slide glass
Layer, the transfer insert layer is put into bonder, keeps heating 30 minutes at 101.3 kPas of normal pressure, 830 DEG C of temperature
Form bonded layer.
The AlGaN potential barrier of the first structure is bonded in after the bonded layer and forms second structure.
Specifically, it is bonded in after the bonded layer after the AlGaN potential barrier of the first structure being overturn 180 ° and forms institute
State the second structure.
Preferably, second structure is the face N GaN base structure.
Referring again to Fig. 3, specifically, the face the N GaN base structure from bottom to top successively include slide glass 7, bonded layer 6,
AlGaN potential barrier 5, GaN channel layer 4, AlGaN self-stopping technology layer 3, GaN buffer layer 2, Si substrate layer 1.
Preferably, the bonded layer 6 is with a thickness of 50nm.
The slide glass 7 is Si, and the slide glass 7 is with a thickness of 300 μm.
Step 3, the substrate layer formation third structure of removal second structure.
Specifically, the substrate layer for removing second structure forms third structure, comprising:
Using dry etching method, the third structure is formed after the substrate layer of second structure is etched.
Referring again to Fig. 4 a, specifically, etching gas is passed through in ICP etching apparatus using the method for dry etching
SF6, the etching gas SF6Flow is 50sccm, and keeping the pressure of the ICP etching apparatus is 5mTorr, the ICP etching
The power of equipment is 300W, and the RF power of the ICP etching apparatus is 20W, and etch rate is 50nm/ minutes, by described second
The substrate layer 1 of structure forms the third structure after etching.
Step 4, GaN buffer layer the 4th structure of formation of the removal third structure.
Specifically, the GaN buffer layer for removing the third structure forms the 4th structure, comprising:
Using dry etching method, after being passed through etching gas, after the GaN buffer layer of the third structure is etched described in formation
4th structure.
Preferably, the etching gas is SF6And BCl3Mixed gas.
Specifically, referring again to Fig. 4 b, etching gas is passed through in ICP etching apparatus using the method for dry etching
SF6:BCl3, the etching gas SF6:BCl3Flowrate proportioning be 50:20sccm, keep the pressure of the ICP etching apparatus to be
5mTorr, the power of the ICP etching apparatus are 100W, and the RF power of the ICP etching apparatus is 10W, and etch rate is
50nm/ minutes, the 4th structure was formed after the GaN buffer layer 2 of the third structure is etched.
Due to the etching gas SF6:BCl3Proportion can not etch the AlGaN self-stopping technology layer 3, therefore, this step etching
It is automatically stopped when to the AlGaN self-stopping technology layer, realizes self termination of the invention.
The AlGaN self-stopping technology layer formation hetero-junctions of step 5, removal the 4th structure.
Specifically, the AlGaN self-stopping technology layer for removing the 4th structure forms hetero-junctions, comprising:
Using dry etching method, the hetero-junctions is formed after the AlGaN self-stopping technology layer of the 4th structure is etched.
Further, referring again to Fig. 4 c, using the method for dry etching, in ICP etching apparatus, it is passed through etching
Gas BCl3, the etching gas BCl3Flow is 50sccm, and keeping the pressure of the ICP etching apparatus is 5mTorr, described
The power of ICP etching apparatus is 80W, and the RF power of the ICP etching apparatus is 10W, is etched using slow rate, etch rate is
3nm/ minutes, the hetero-junctions was formed after the AlGaN self-stopping technology layer 3 of the 4th structure is etched.
Preferably, the hetero-junctions successively includes slide glass 7, bonded layer 6, AlGaN potential barrier 5 and GaN channel from bottom to top
Layer 4.
Further, the advantages of slow rate etches is to be easy accurate control etching depth and roughness.
Step 6, GaN channel layer formation source electrode, drain electrode and gate electrode in the hetero-junctions.
Specifically, source electrode, drain electrode and gate electrode are formed in the GaN channel layer of the hetero-junctions, comprising:
In GaN channel layer surface difference photolithographic source electrode zone, drain regions and the gate electrode region of the hetero-junctions；
Formed after the first metal layer is precipitated in the source electrode region and the drain regions respectively the source electrode and
The drain electrode；
The gate electrode is formed after second metal layer is precipitated in the gate electrode region.
Further, referring again to Fig. 4 d, the source electrode region described in the GaN channel layer surface photoetching of the hetero-junctions
With the drain regions, and the first metal layer is precipitated in the source electrode region and the drain regions, and by described the
One metal layer forms the source electrode and the drain electrode after heating 30 seconds at a temperature of 830 DEG C.
Preferably, the first metal layer stacks gradually as Ti/Al/Ni/Au, corresponding with a thickness of 22/140/55/45nm.
Referring again to Fig. 4 e, specifically, the gate electrode region described in the GaN channel layer surface photoetching of the hetero-junctions,
And second metal layer is precipitated in the gate electrode region, and shape after the second metal layer is heated 30 seconds at a temperature of 830 DEG C
At the gate electrode.
Preferably, the second metal layer stacks gradually as Ni/Au, corresponding with a thickness of 20/200nm.
Embodiment three
Referring once again to Fig. 1, which includes the following steps:
Step 1, preparation first structure, the first structure include the substrate layer stacked gradually, GaN buffer layer, AlGaN from
Stop-layer, GaN channel layer and AlGaN potential barrier.
Specifically, Si is chosen as substrate layer, and using mocvd method, controlling reaction chamber temperature is 900 DEG C, is served as a contrast in the Si
GaN buffer layer is grown on bottom；
Using mocvd method, controlling reaction chamber temperature is 920 DEG C, and AlGaN self-stopping technology layer is grown on the GaN buffer layer；
Using mocvd method, controlling reaction chamber temperature is 900 DEG C, and GaN channel layer is grown on the AlGaN self-stopping technology layer；
Using mocvd method, controlling reaction chamber temperature is 930 DEG C, grows AlGaN potential barrier on the GaN channel layer.
Preferably, the first structure is the face Ga GaN base structure.
Further, referring again to Fig. 2, the face the Ga GaN base structure, successively include from bottom to top Si substrate layer 1,
GaN buffer layer 2, AlGaN self-stopping technology layer 3, GaN channel layer 4, AlGaN potential barrier 5.
Specifically, the Si substrate layer 1 with a thickness of 420 μm, the GaN buffer layer 2 with a thickness of 800nm, it is described
AlGaN self-stopping technology layer 3 with a thickness of 20nm, the GaN channel layer 4 with a thickness of 70nm, the thickness of the AlGaN potential barrier 5
For 20nm.
Further, in the AlGaN self-stopping technology layer 3, Al component is 20%~40%；
In the AlGaN potential barrier 5, Al component is 25%~40%.
The AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure by step 2.
Specifically, the AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure, comprising:
It carries out being thermally formed bonded layer after spin coating hydrogen silicon silsequioxane on the slide glass.
Further, the bonded layer formation process process are as follows: one layer of HSQ of spin coating is as transfer insertion on the slide glass
Layer, the transfer insert layer is put into bonder, is kept for 101.3 kPas of normal pressure, heating at a temperature of temperature 830 30 minutes can
To form bonded layer.
The AlGaN potential barrier of the first structure is bonded in after the bonded layer and forms second structure.
It is bonded in after the bonded layer after the AlGaN potential barrier of the first structure is overturn 180 ° and forms second knot
Structure.
Preferably, second structure is the face N GaN base structure.
Referring again to Fig. 3, specifically, the face the N GaN base structure from bottom to top successively include slide glass 7, bonded layer 6,
AlGaN potential barrier 5, GaN channel layer 4, AlGaN self-stopping technology layer 3, GaN buffer layer 2, Si substrate layer 1.
Preferably, the bonded layer 6 is with a thickness of 100nm.
The slide glass 7 is sapphire, and the slide glass 7 is with a thickness of 800 μm.
Step 3, the substrate layer formation third structure of removal second structure.
Specifically, the substrate layer for removing second structure forms third structure, comprising:
Using dry etching method, the third structure is formed after the substrate layer of second structure is etched.
Referring again to Fig. 4 a, specifically, etching gas is passed through in ICP etching apparatus using the method for dry etching
SF6, the etching gas SF6Flow is 50sccm, and keeping the pressure of the ICP etching apparatus is 5mTorr, the ICP etching
The power of equipment is 300W, and the RF power of the ICP etching apparatus is 20W, and etch rate is 50nm/ minutes, by described second
The substrate layer 1 of structure forms the third structure after etching.
Step 4, GaN buffer layer the 4th structure of formation of the removal third structure.
Specifically, the GaN buffer layer for removing the third structure forms the 4th structure, comprising:
Using dry etching method, after being passed through etching gas, after the GaN buffer layer of the third structure is etched described in formation
4th structure.
Preferably, the etching gas is SF6And BCl3Mixed gas.
Specifically, referring again to Fig. 4 b, etching gas is passed through in ICP etching apparatus using the method for dry etching
SF6:BCl3, the etching gas SF6:BCl3Flowrate proportioning be 50:20sccm, keep the pressure of the ICP etching apparatus to be
5mTorr, the power of the ICP etching apparatus are 100W, and the RF power of the ICP etching apparatus is 10W, and etch rate is
50nm/ minutes, the 4th structure was formed after the GaN buffer layer 2 of the third structure is etched.
Due to the etching gas SF6:BCl3Proportion can not etch the AlGaN self-stopping technology layer 3, therefore, this step etching
It is automatically stopped when to the AlGaN self-stopping technology layer, realizes self termination of the invention.
The AlGaN self-stopping technology layer formation hetero-junctions of step 5, removal the 4th structure.
Specifically, the AlGaN self-stopping technology layer for removing the 4th structure forms hetero-junctions, comprising:
Using dry etching method, the hetero-junctions is formed after the AlGaN self-stopping technology layer of the 4th structure is etched.
Further, referring again to Fig. 4 c, using the method for dry etching, in ICP etching apparatus, it is passed through etching
Gas BCl3, the etching gas BCl3Flow is 50sccm, and keeping the pressure of the ICP etching apparatus is 5mTorr, described
The power of ICP etching apparatus is 80W, and the RF power of the ICP etching apparatus is 10W, is etched using slow rate, etch rate is
3nm/ minutes, the hetero-junctions was formed after the AlGaN self-stopping technology layer 3 of the 4th structure is etched.
Preferably, the hetero-junctions successively includes slide glass 7, bonded layer 6, AlGaN potential barrier 5 and GaN channel from bottom to top
Layer 4.
Further, the advantages of slow rate etches is to be easy accurate control etching depth and roughness.
Step 6, GaN channel layer formation source electrode, drain electrode and gate electrode in the hetero-junctions.
Specifically, source electrode, drain electrode and gate electrode are formed in the GaN channel layer of the hetero-junctions, comprising:
In GaN channel layer surface difference photolithographic source electrode zone, drain regions and the gate electrode region of the hetero-junctions；
Formed after the first metal layer is precipitated in the source electrode region and the drain regions respectively the source electrode and
The drain electrode；
The gate electrode is formed after second metal layer is precipitated in the gate electrode region.
Further, referring again to Fig. 4 d, the source electrode region described in the GaN channel layer surface photoetching of the hetero-junctions
With the drain regions, and the first metal layer is precipitated in the source electrode region and the drain regions, and by described the
One metal layer forms the source electrode and the drain electrode after heating 30 seconds at a temperature of 830 DEG C.
Preferably, the first metal layer stacks gradually as Ti/Al/Ni/Au, corresponding with a thickness of 22/140/55/45nm.
Referring again to Fig. 4 e, specifically, the gate electrode region described in the GaN channel layer surface photoetching of the hetero-junctions,
And second metal layer is precipitated in the gate electrode region, and shape after the second metal layer is heated 30 seconds at a temperature of 830 DEG C
At the gate electrode.
Preferably, the second metal layer stacks gradually as Ni/Au, corresponding with a thickness of 20/200nm.
Example IV
Referring once again to Fig. 1, which includes the following steps:
Step 1, preparation first structure, the first structure include the substrate layer stacked gradually, GaN buffer layer, AlGaN from
Stop-layer, GaN channel layer and AlGaN potential barrier.
Specifically, Si is chosen as substrate layer, and using mocvd method, controlling reaction chamber temperature is 900 DEG C, is served as a contrast in the Si
GaN buffer layer is grown on bottom；
Using mocvd method, controlling reaction chamber temperature is 920 DEG C, and AlGaN self-stopping technology layer is grown on the GaN buffer layer；
Using mocvd method, controlling reaction chamber temperature is 900 DEG C, and GaN channel layer is grown on the AlGaN self-stopping technology layer；
Using mocvd method, controlling reaction chamber temperature is 930 DEG C, grows AlGaN potential barrier on the GaN channel layer.
Preferably, the first structure is the face Ga GaN base structure.
Further, referring again to Fig. 2, the face the Ga GaN base structure, successively include from bottom to top Si substrate layer 1,
GaN buffer layer 2, AlGaN self-stopping technology layer 3, GaN channel layer 4, AlGaN potential barrier 5.
Specifically, the Si substrate layer 1 with a thickness of 385 μm, the GaN buffer layer 2 with a thickness of 550nm, it is described
AlGaN self-stopping technology layer 3 with a thickness of 12.5nm, the GaN channel layer 4 with a thickness of 50nm, the thickness of the AlGaN potential barrier 5
Degree is 12.5nm.
Further, in the AlGaN self-stopping technology layer 3, Al component is 20%~40%；
In the AlGaN potential barrier 5, Al component is 25%~40%.
The AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure by step 2.
Specifically, the AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure, comprising:
It carries out being thermally formed bonded layer after spin coating hydrogen silicon silsequioxane on the slide glass.
Further, the bonded layer formation process process are as follows: one layer of HSQ of spin coating is as transfer insertion on the slide glass
Layer, the transfer insert layer is put into bonder, is kept for 101.3 kPas of normal pressure, heating at a temperature of temperature 830 30 minutes can
To form bonded layer.
The AlGaN potential barrier of the first structure is bonded in after the bonded layer and forms second structure.
It is bonded in after the bonded layer after the AlGaN potential barrier of the first structure is overturn 180 ° and forms second knot
Structure.
Preferably, second structure is the face N GaN base structure.
Referring again to Fig. 3, specifically, the face the N GaN base structure from bottom to top successively include slide glass 7, bonded layer 6,
AlGaN potential barrier 5, GaN channel layer 4, AlGaN self-stopping technology layer 3, GaN buffer layer 2, Si substrate layer 1.
Preferably, the bonded layer 6 is with a thickness of 75nm.
The slide glass 7 is SiC or diamond, and the slide glass 7 is with a thickness of 550 μm.
Step 3, the substrate layer formation third structure of removal second structure.
Specifically, the substrate layer for removing second structure forms third structure, comprising:
Using dry etching method, the third structure is formed after the substrate layer of second structure is etched.
Referring again to Fig. 4 a, specifically, etching gas is passed through in ICP etching apparatus using the method for dry etching
SF6, the etching gas SF6Flow is 50sccm, and keeping the pressure of the ICP etching apparatus is 5mTorr, the ICP etching
The power of equipment is 300W, and the RF power of the ICP etching apparatus is 20W, and etch rate is 50nm/ minutes, by described second
The substrate layer 1 of structure forms the third structure after etching.
Step 4, GaN buffer layer the 4th structure of formation of the removal third structure.
Specifically, the GaN buffer layer for removing the third structure forms the 4th structure, comprising:
Using dry etching method, after being passed through etching gas, after the GaN buffer layer of the third structure is etched described in formation
4th structure.
Preferably, the etching gas is SF6And BCl3Mixed gas.
Specifically, referring again to Fig. 4 b, etching gas is passed through in ICP etching apparatus using the method for dry etching
SF6:BCl3, the etching gas SF6:BCl3Flowrate proportioning be 50:20sccm, keep the pressure of the ICP etching apparatus to be
5mTorr, the power of the ICP etching apparatus are 100W, and the RF power of the ICP etching apparatus is 10W, and etch rate is
50nm/ minutes, the 4th structure was formed after the GaN buffer layer 2 of the third structure is etched.
Due to the etching gas SF6:BCl3Proportion can not etch the AlGaN self-stopping technology layer 3, therefore, this step etching
It is automatically stopped when to the AlGaN self-stopping technology layer, realizes self termination of the invention.
The AlGaN self-stopping technology layer formation hetero-junctions of step 5, removal the 4th structure.
Specifically, the AlGaN self-stopping technology layer for removing the 4th structure forms hetero-junctions, comprising:
Using dry etching method, the hetero-junctions is formed after the AlGaN self-stopping technology layer of the 4th structure is etched.
Further, referring again to Fig. 4 c, using the method for dry etching, in ICP etching apparatus, it is passed through etching
Gas BCl3, the etching gas BCl3Flow is 50sccm, and keeping the pressure of the ICP etching apparatus is 5mTorr, described
The power of ICP etching apparatus is 80W, and the RF power of the ICP etching apparatus is 10W, is etched using slow rate, etch rate is
3nm/ minutes, first hetero-junctions was formed after the AlGaN self-stopping technology layer 3 of the 4th structure is etched.
Preferably, the hetero-junctions successively includes slide glass 7, bonded layer 6, AlGaN potential barrier 5 and GaN channel from bottom to top
Layer 4.
Further, the advantages of slow rate etches is to be easy accurate control etching depth and roughness.
Step 6, GaN channel layer formation source electrode, drain electrode and gate electrode in the hetero-junctions.
Specifically, source electrode, drain electrode and gate electrode are formed in the GaN channel layer of the hetero-junctions, comprising:
In GaN channel layer surface difference photolithographic source electrode zone, drain regions and the gate electrode region of the hetero-junctions；
Formed after the first metal layer is precipitated in the source electrode region and the drain regions respectively the source electrode and
The drain electrode；
The gate electrode is formed after second metal layer is precipitated in the gate electrode region.
Further, referring again to Fig. 4 d, the source electrode region described in the GaN channel layer surface photoetching of the hetero-junctions
With the drain regions, and the first metal layer is precipitated in the source electrode region and the drain regions, and by described the
One metal layer forms the source electrode and the drain electrode after heating 30 seconds at a temperature of 830 DEG C.
Preferably, the first metal layer stacks gradually as Ti/Al/Ni/Au, corresponding with a thickness of 22/140/55/45nm.
Referring again to Fig. 4 e, specifically, the gate electrode region described in the GaN channel layer surface photoetching of the hetero-junctions,
And second metal layer is precipitated in the gate electrode region, and shape after the second metal layer is heated 30 seconds at a temperature of 830 DEG C
At the gate electrode.
Preferably, the second metal layer stacks gradually as Ni/Au, corresponding with a thickness of 20/200nm.
Embodiment five
Fig. 5 is referred to, Fig. 5 is a kind of structure of high power device based on self termination transfer provided in an embodiment of the present invention
Schematic diagram.The present embodiment provides a kind of high power device based on self termination transfer on the basis of the above embodiments, comprising:
First layer is slide glass 7；
Wherein, the slide glass 7 is Si, sapphire, SiC or diamond, and the slide glass 7 is with a thickness of 300~800 μm.
The second layer is bonded layer 6, is located on the slide glass 7；
Wherein, the bonded layer 6 is with a thickness of 50~100nm.
Third layer is AlGaN potential barrier 5, is located on the bonded layer 6；
Wherein, the AlGaN potential barrier 5 is with a thickness of 5~20nm.
4th layer is GaN channel layer 4, is located in the AlGaN potential barrier 5；
Wherein, the GaN channel layer 4 is with a thickness of 30~70nm.
Layer 5 and layer 6 are respectively source electrode 8 and drain electrode 9, are located on the GaN channel layer 4；
Wherein, the source electrode 8 and the drain electrode 9 are Ti/Al/Ni/Au stacked laminations of metal, corresponding with a thickness of 22/
140/55/45nm。
Layer 7 is gate electrode 10, is located on the GaN channel layer 4；
Wherein, the gate electrode 10 is Ni/Au stacked laminations of metal, corresponding with a thickness of 20/200nm.
Compared with prior art, beneficial effects of the present invention:
Preparation method provided in an embodiment of the present invention introduces AlGaN self-stopping technology layer while not influencing material parameter,
Due to etching gas SF6:BCl3Proportion can not etch the AlGaN self-stopping technology layer, therefore it is real in etching GaN trenches
Existing self termination, and etching depth and roughness can be accurately controlled using slow rate etching.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. a kind of preparation method of the high power device based on self termination transfer, which is characterized in that this method comprises:
First structure is prepared, the first structure includes the substrate layer stacked gradually, GaN buffer layer, AlGaN self-stopping technology layer, GaN
Channel layer and AlGaN potential barrier；
The AlGaN potential barrier of the first structure is bonded on slide glass and forms the second structure；
The substrate layer for removing second structure forms third structure；
The GaN buffer layer for removing the third structure forms the 4th structure；
The AlGaN self-stopping technology layer for removing the 4th structure forms hetero-junctions；
Source electrode, drain electrode and gate electrode are formed in the GaN channel layer of the hetero-junctions.
2. the method according to claim 1, wherein preparation first structure, comprising:
Using mocvd method, the GaN buffer layer is successively grown on the substrate layer, on the GaN buffer layer described in growth
AlGaN self-stopping technology layer grows the GaN channel layer on the AlGaN self-stopping technology layer, grows institute on the GaN channel layer
State AlGaN potential barrier.
3. the method according to claim 1, wherein the AlGaN potential barrier of the first structure is bonded in load
On piece forms the second structure, comprising:
It carries out being thermally formed bonded layer after spin coating hydrogen silicon silsequioxane on the slide glass；
The AlGaN potential barrier of the first structure is bonded in after the bonded layer and forms second structure.
4. the method according to claim 1, wherein the substrate layer of removal second structure forms third knot
Structure, comprising:
Using dry etching method, the third structure is formed after the substrate layer of second structure is etched.
5. the method according to claim 1, wherein the GaN buffer layer for removing the third structure forms the 4th
Structure, comprising:
Using dry etching method, after being passed through etching gas, the described 4th is formed after the GaN buffer layer of the third structure is etched
Structure.
6. according to the method described in claim 5, it is characterized in that, the etching gas is SF6And BCl3Mixed gas.
7. the method according to claim 1, wherein the AlGaN self-stopping technology layer of removal the 4th structure is formed
Hetero-junctions, comprising:
Using dry etching method, the hetero-junctions is formed after the AlGaN self-stopping technology layer of the 4th structure is etched.
8. the method according to claim 1, wherein the GaN channel layer in the hetero-junctions forms source electrode, leakage
Electrode and gate electrode, comprising:
In GaN channel layer surface difference photolithographic source electrode zone, drain regions and the gate electrode region of the hetero-junctions；
The source electrode and described is formed after the first metal layer is precipitated in the source electrode region and the drain regions respectively
Drain electrode；
The gate electrode is formed after second metal layer is precipitated in the gate electrode region.
9. a kind of high power device based on self termination transfer characterized by comprising slide glass 7, bonded layer 6, AlGaN potential barrier
Layer 5, GaN channel layer 4, source electrode 8, drain electrode 9 and gate electrode 10, wherein
The slide glass 7, the bonded layer 6, the AlGaN potential barrier 5, the GaN channel layer 4 stack gradually from bottom to top, institute
It states source electrode 8, the drain electrode 9 and the gate electrode 10 to be respectively positioned on the GaN channel layer 4, the high power device is by weighing
Benefit requires 1~8 any one preparation method to prepare to be formed.
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|---|---|---|---|---|
| CN113113476A (en) * | 2021-03-01 | 2021-07-13 | 西安电子科技大学 | GaN HEMT device suitable for low-working-voltage high-efficiency application and preparation method thereof |
| CN113555283A (en) * | 2020-04-24 | 2021-10-26 | 江苏鲁汶仪器有限公司 | Method for etching heterojunction of GaN-based high-electron-mobility transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170133295A1 (en) * | 2015-11-11 | 2017-05-11 | Qorvo Us, Inc. | Semiconductor device with high thermal conductivity substrate and process for making the same |
| CN107507858A (en) * | 2017-08-28 | 2017-12-22 | 电子科技大学 | A kind of Current Limiting Diodes |
| CN109065449A (en) * | 2018-08-16 | 2018-12-21 | 苏州汉骅半导体有限公司 | The thining method of epitaxial structure |
-
2019
- 2019-01-11 CN CN201910028105.0A patent/CN109904071B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170133295A1 (en) * | 2015-11-11 | 2017-05-11 | Qorvo Us, Inc. | Semiconductor device with high thermal conductivity substrate and process for making the same |
| CN107507858A (en) * | 2017-08-28 | 2017-12-22 | 电子科技大学 | A kind of Current Limiting Diodes |
| CN109065449A (en) * | 2018-08-16 | 2018-12-21 | 苏州汉骅半导体有限公司 | The thining method of epitaxial structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555283A (en) * | 2020-04-24 | 2021-10-26 | 江苏鲁汶仪器有限公司 | Method for etching heterojunction of GaN-based high-electron-mobility transistor |
| CN113555283B (en) * | 2020-04-24 | 2024-04-05 | 江苏鲁汶仪器股份有限公司 | Method for etching heterojunction of GaN-based high-electron-mobility transistor |
| CN113113476A (en) * | 2021-03-01 | 2021-07-13 | 西安电子科技大学 | GaN HEMT device suitable for low-working-voltage high-efficiency application and preparation method thereof |
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