CN109891688A - Laser aid and laser-processing system - Google Patents

Laser aid and laser-processing system Download PDF

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Publication number
CN109891688A
CN109891688A CN201680090114.7A CN201680090114A CN109891688A CN 109891688 A CN109891688 A CN 109891688A CN 201680090114 A CN201680090114 A CN 201680090114A CN 109891688 A CN109891688 A CN 109891688A
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China
Prior art keywords
laser
burst
light
control unit
pulse
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CN201680090114.7A
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CN109891688B (en
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柿崎弘司
若林理
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Aurora Advanced Laser Corp
Gigaphoton Inc
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Aurora Advanced Laser Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2375—Hybrid lasers
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10084—Frequency control by seeding
    • H—ELECTRICITY
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/09702—Details of the driver electronics and electric discharge circuits
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H01S3/10015—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by monitoring or controlling, e.g. attenuating, the input signal
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/1301—Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
    • H01S3/1625—Solid materials characterised by an active (lasing) ion transition metal titanium
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H01S3/1636—Al2O3 (Sapphire)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

Laser aid has: A, solid state laser device, and output includes the burst seed pulse light of multiple pulses；B, quasi-molecule amplifier amplifies burst seed pulse light using primary electric discharge, in discharge space as amplification burst light output；C, energy sensor, the energy of measurement amplification burst light；And D, card for laser control unit,, based on the opportunity and the relationship between the measured value of the difference and energy that generate the opportunity of electric discharge in discharge space for exporting burst seed pulse light from the solid state laser device, correction makes the opportunity of solid state laser device output burst seed pulse light for it.

Description

Laser aid and laser-processing system
Technical field
This disclosure relates to laser aid and laser-processing system.
Background technique
With the micromation of semiconductor integrated circuit and highly integrated, in semiconductor exposure device, it is desirable that improve point Distinguish power.In the following, semiconductor exposure device is referred to as " exposure device ".For this purpose, promoting the light exported from exposure light source Short wavelengthization.The gas laser apparatus of discharge excitation type is used as exposure light source, and existing mercury lamp is replaced with this.Mesh Before, as exposure laser aid, using the KrF excimer laser apparatus and output of the ultraviolet light of output 248.4nm wavelength The ArF excimer laser apparatus of the ultraviolet light of 193.4nm wavelength.
As existing exposure technique, the actual use of immersion exposure, the i.e. projecting lens in exposure device side are realized Gap filling liquid between chip, by changing the refractive index in the gap, that shortens exposure light source witnesses wavelength.Making In the case where carrying out immersion exposure using ArF excimer laser apparatus for exposure light source, the wavelength into wafer illumination water is The ultraviolet light of 134nm.The technology is known as ArF immersion exposure.ArF immersion exposure is also known as the leaching photoetching of ArF liquid.
Spectrum zooming in the free oscillation of KrF, ArF excimer laser apparatus is wider, reaches about 350~400pm, so Occur shrinking the chromatic aberation for projecting laser (ultraviolet) on the wafer by the projecting lens of exposure device side, reduces and divide Distinguish power.For this reason, it may be necessary to by the spectrum zooming narrowband of the laser exported from gas laser apparatus to the journey that can ignore that chromatic aberation Degree.Therefore, the narrowband module (Line with narrowband element is provided in the laser resonator of gas laser apparatus Narrow Module), the narrowband of spectrum zooming is realized by the narrowband module.Narrowband element can also be calibrator Or grating etc..The laser aid for making spectrum zooming narrowband in this way is known as narrowband laser aid.
Also, the pulse width of the ultraviolet laser exported from excimer laser apparatus is about tens ns, and wavelength is shorter, respectively It is 248.4nm and 193.4nm, so being occasionally used for the direct processing of high molecular material or glass material etc..For macromolecule material Material, using the ultraviolet laser with the high light energy of specific binding energy amount, cuts off the combination of high molecular material.Therefore, such as many institute's weeks Know, non-heated processing may be implemented using ultraviolet laser, and it is possible to obtain agile machining shape.Also, for glass or Ceramics etc. are difficult to be processed using visible laser and infrared laser, still, for the purple exported from excimer laser apparatus The absorptivity of outer laser is higher, so can be processed using ultraviolet laser.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2013-222173 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2016-51897 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2014-53627 bulletin
Patent document 4: Japanese Unexamined Patent Application Publication 2012-515450 bulletin
Summary of the invention
According to the laser aid of the disclosure viewpoint, have:
A, solid state laser device, output include the burst seed pulse light of multiple pulses；
B, quasi-molecule amplifier amplifies burst seed pulse light using primary electric discharge, makees in discharge space It is exported for amplification burst light；
C, energy sensor, the energy of measurement amplification burst light；And
D, card for laser control unit, based on the opportunity from solid state laser device output burst seed pulse light and in discharge space Relationship between the middle difference on opportunity and the measured value of energy for generating electric discharge, correction make solid state laser device output burst seed arteries and veins The opportunity washed off.
According to the laser-processing system of the disclosure viewpoint, have:
K, above-mentioned laser aid；And
L, laser irradiation device irradiates the amplification burst light inputted from laser aid to machined object.
Detailed description of the invention
In the following, being described with reference to several embodiments of the disclosure as just example.
Fig. 1 is the figure for schematically illustrating the composition of the laser aid according to comparative example.
Fig. 2 is the block diagram for showing the composition of the solid state laser device according to comparative example.
Fig. 3 is the timing diagram for showing the opportunity of burst seed pulse light and electric discharge.
Fig. 4 A is the explanatory diagram for the situation for illustrating that the opportunity of burst seed pulse light and electric discharge is appropriate.
Fig. 4 B is the explanatory diagram for illustrating the situation out of season of burst seed pulse light and electric discharge.
Fig. 5 is the figure for schematically illustrating the composition of laser aid according to first embodiment.
Fig. 6 is the block diagram for showing the composition of solid state laser device according to first embodiment.
Fig. 7 is the figure of the various parameters of the waveform of regulation amplification burst light.
Fig. 8 is the figure of the various parameters of the waveform of regulation burst signals.
Fig. 9 is the timing diagram for showing the action moment of laser aid according to first embodiment.
Figure 10 is the flow chart for illustrating the corrective action of trigger delay time.
Figure 11 A is the flow chart for illustrating to vibrate preparatory action.
Figure 11 B is the flow chart for illustrating this oscillation action.
Figure 12 is the flow chart for illustrating processing when receiving target burst data.
Figure 13 is the flow chart for illustrating processing when sending setting data to burst generator.
Figure 14 is the flow chart for illustrating the measurement movement of burst energy.
Figure 15 is the flow chart for illustrating the optimization processing of target delay time.
Figure 16 shows the figure of table T1.
Figure 17 is the flow chart for illustrating energy back control.
Figure 18 is the figure for schematically illustrating the composition of the laser aid according to second embodiment.
Figure 19 is the timing diagram for showing the action moment of the laser aid according to second embodiment.
Figure 20 A is the flow chart for illustrating to vibrate preparatory action.
Figure 20 B is the flow chart for illustrating this oscillation action.
Figure 21 is the flow chart for illustrating processing when receiving target burst data.
Figure 22 is the flow chart for illustrating the analysis movement of impulse waveform.
Figure 23 is the figure for showing table T2.
Figure 24 is the flow chart for illustrating the optimization processing of target delay time.
Figure 25 is the figure for showing table T3.
Figure 26 is the flow chart for illustrating parameter feedback control.
Figure 27 is the figure for schematically illustrating the composition of the laser aid according to third embodiment.
Figure 28 is the figure for showing the composition of the solid state laser device according to third embodiment.
Figure 29 A is the flow chart for illustrating to vibrate preparatory action.
Figure 29 B is the flow chart for illustrating this oscillation action.
Figure 30 is the flow chart for illustrating processing when receiving target burst data.
Figure 31 is the flow chart for illustrating processing when sending wavelength data.
Figure 32 is the flow chart for illustrating wavelength measurement movement.
Figure 33 is the flow chart for illustrating wavelength feedback control.
Figure 34 is the figure for showing the composition of the solid state laser device according to first variation.
Figure 35 is the timing diagram for showing the action moment of the laser aid according to first variation.
Figure 36 is the figure for showing the composition of the solid state laser device according to the second variation.
Figure 37 is the figure for showing the composition of the burst seed pulse generator according to the second variation.
Figure 38 is the figure for showing laser-processing system.
Figure 39 is the figure for showing the specific example of semiconductor laser and semiconductor optical amplifier.
Figure 40 is the figure for showing the variation of discharge sensor.
Specific embodiment
< content >
1, comparative example
1.1 constituting
1.2 movement
1.3 project
The burst of 1.4 seed lights
2, first embodiment
2.1 constituting
2.2 definition
2.2.1 amplify the waveform of burst light
2.2.2 the waveform of burst signals
2.3 movement
2.3.1 elemental motion opportunity
2.3.2 the correction process of trigger delay time
2.3.3 vibrational control
2.4 effect
3, second embodiment
3.1 constituting
3.2 movement
3.2.1 elemental motion opportunity
3.2.2 the correction process of trigger delay time
2.3.3 vibrational control
3.3 effect
4, third embodiment
4.1 constituting
4.2 movement
4.2.1 vibrational control
4.3 effect
5, the variation of solid state laser device
5.1 first variation
5.1.1 constituting
5.1.2 movement
5.1.3 effect
5.2 second variations
5.2.1 constituting and acting
6, laser-processing system
6.1 constituting
6.2 effect
7, the specific example of semiconductor laser and semiconductor optical amplifier
7.1 constituting
7.2 movement
7.3 effect
8, the variation of discharge sensor
8.1 constitute and act
8.2 effect
9, other variations
In the following, embodiment of the present disclosure is explained in detail with reference to the accompanying drawings.Embodiment described below shows the disclosure Several examples, be not used to limit content of this disclosure.Also, do not limit the composition that illustrates in each embodiment with And movement is entirely necessary as the composition of the disclosure and movement.It should be noted that being marked for same constitution element Identical appended drawing reference, and omit repeated explanation.
1, comparative example
1.1 constituting
Fig. 1 and Fig. 2 shows the compositions according to the laser aid 2 of comparative example.Laser aid 2 is MOPA (Master Oscillator Power Amplifier: main power amplifier) formula laser aid.In Fig. 1, laser aid 2 includes making For the solid state laser device 10 of MO (Master Oscillator: master oscillator), as PA (Power Amplifier: power Amplifier) quasi-molecule amplifier 20, monitoring module 30, shutter 40, card for laser control unit 50 and synchronous circuit 60.
Fig. 2 shows the compositions of solid state laser device 10.Solid state laser device 10 includes semiconductor laser 11, semiconductor Image intensifer 12, Ti-doped sapphire amplifier 13, Wavelength conversion system 14 and solid-state laser control unit 15.Solid-state laser control The movement of the control of portion 15 semiconductor laser 11, Ti-doped sapphire amplifier 13 and Wavelength conversion system 14.
Semiconductor laser 11 is CW (Continuous Wave: continuous wave) laser that output wavelength is about 773.6nm Distributed feedback type semiconductor laser.Preferably, semiconductor laser 11 is configured to the temperature setting by changing semiconductor, can To change oscillation wavelength.Semiconductor optical amplifier 12 is according to aftermentioned second internal trigger signal Tr2 to from semiconductor laser The seed light of 11 outputs carries out pulse amplifying.In the following, the laser for being converted to pulse type by semiconductor optical amplifier 12 is known as Seed pulse light.
Ti-doped sapphire amplifier 13 includes ti sapphire crystal (not shown) and pumping laser (not shown). Ti sapphire crystal configures in the optical path of the seed pulse light exported from semiconductor optical amplifier 12.Pumping is with laser Such as the laser aid of the second higher hamonic wave light of output YLF laser.Ti-doped sapphire amplifier 13 is put to from semiconductor light The seed pulse light that big device 12 exports amplifies.
Wavelength conversion system 14 includes the LBO (LiB as nonlinear crystal3O5) crystal and KBBF (KBe2BO3F2) brilliant Body.Receiving carries out wavelength convert after the seed pulse light that Ti-doped sapphire amplifier 13 exports, and generates the 4th higher hamonic wave light. I.e., the ultraviolet seed pulse light SP that 14 output wavelength of Wavelength conversion system is about 193.4nm.
When the oscillation wavelength of semiconductor laser 11 can be changed by being set as, it is preferable that be configured to lbo crystal and KBBF crystal is arranged respectively on turntable (not shown), can change the incident angle of the seed pulse light of incident each crystal. Solid-state laser control unit 15 rotates each turntable, so that the incident angle of the seed pulse light of incident each crystal reaches and target The corresponding phase matched angle of wavelength.
In Fig. 1, quasi-molecule amplifier 20 includes laser cavity 21, pulse power module (PPM) 22, charger 23, triggering Correction unit 24, convex mirror 25a and concave mirror 25b.Laser cavity 21 is provided with window 21a, 21b.Work is incorporated in laser cavity 21 For the laser gas of laser medium.Laser gas is, for example, argon fluorine (ArF) gas.
Also, it is formed with opening in laser cavity 21, and is provided with and buries multiple feedthroughs (feedthrough) 26a's Electrical insulating board 26, for blocking the opening.PPM22 is configured on electrical insulating board 26.Configured with as master in laser cavity 21 The the first discharge electrode 27a and the second discharge electrode 27b and earth plate 28 of electrode.
First discharge electrode 27a and the second discharge electrode 27b are as by discharging come a pair of excitation laser medium Discharge electrode, relative configuration.It is opposite that first discharge electrode 27a and the second discharge electrode 27b is configured to mutual discharge face.By Space between the discharge face of one discharge electrode 27a and the discharge face of the second discharge electrode 27b is known as discharge space.First electric discharge Electrode 27a's is electrically insulated plate 26 with the face of discharge face opposite side and supports.First discharge electrode 27a is connected to feedthrough 26a.The Two discharge electrode 27b's is grounded plate 28 with the face of discharge face opposite side and supports.
PPM22 other than switch 22a, further include charging capacitor (not shown), pulse transformer, magnetic compression circuit with And peaking capacitor.Peaking capacitor is connected to feedthrough 26a through not shown interconnecting piece.Charger 23 is to charging capacitor It charges.Specifically, setting value of the charger 23 based on the charging voltage V inputted from card for laser control unit 50, to charging capacitor Device charges.
The on/off of switch 22a is by defeated from triggering correction unit 24 based on aftermentioned first internal trigger signal Tr1 The switching signal S that enters is controlled.When input has that switch 22a is switched on after switching signal S in switch 22a, electric current is from charging Capacitor flows to the primary side of pulse transformer, by electromagnetic induction, the secondary side of reverse current direction pulse transformer.Magnetic Compressor circuit is connected to the secondary side of pulse transformer, compresses the pulse width of current impulse.Peaking capacitor passes through the electric current Pulse and charged.When the voltage of peaking capacitor reaches the breakdown voltage of laser gas, the first discharge electrode 27a and There is insulation breakdown in laser gas between two discharge electrode 27b, generates electric discharge.
Convex mirror 25a and concave mirror 25b is arranged so that the seed pulse light SP exported from solid state laser device 10 passes through Width of light beam is amplified after the discharge space between the first discharge electrode 27a and the second discharge electrode 27b three times.Swash from solid-state The seed pulse light SP that electro-optical device 10 exports through after window 21a by discharge space, through after window 21b by convex mirror 25a Reflection.The seed pulse light SP reflected by convex mirror 25a passes through discharge space after penetrating window 21b, and through after window 21a It is reflected by concave mirror 25b.The seed pulse light SP reflected by concave mirror 25b passes through discharge space after penetrating window 21a, through window Mouth 21b, is output to outside from quasi-molecule amplifier 20.When being reflected by convex mirror 25a, width of light beam obtains seed pulse light SP To amplification.
Synchronous circuit 60 generates the first internal trigger based on the light emission trigger signal Tr0 received from card for laser control unit 50 Signal Tr1 and the second internal trigger signal Tr2.First internal trigger signal Tr1 is inputted quasi-molecule amplifier by synchronous circuit 60 20, the second internal trigger signal Tr2 is inputted into solid state laser device 10.First internal trigger signal Tr1 and the second internal trigger Signal Tr2 has defined time difference Tmod, to be incident on standard in the seed pulse light SP exported from solid state laser device 10 Electric discharge is generated when the discharge space of master amplifier 20.In the following, time difference Tmod is also known as trigger delay time Tmod.
Correction unit 24 is triggered according to the first internal trigger signal Tr1 inputted from synchronous circuit 60, generates and exports switch Signal S.Also, triggering correction unit 24 is corrected from the first internal trigger signal Tr1 of input according to the setting value of charging voltage V and is played Time Tpac until output switching signal S.This is because when PPM22 includes magnetic compression circuit, such as following formula (1) It is shown, it is input to until switch 22a plays generation electric discharge from switching signal S and time Tpas is needed to depend on charging voltage V.
Tpas=K/V ... (1)
Wherein, K is fixed value.
The generation opportunity that correction unit 24 is based on formula (1) correction switching signal S is triggered, so that from the first internal trigger signal The time Tpat that Tr1 input triggering correction unit 24 plays until generating electric discharge is not dependent on charging voltage V.
Be incident on the seed pulse light SP of the discharge space of quasi-molecule amplifier 20 by generated in discharge space electric discharge from And be amplified, as the amplification pulsed light AP being amplified, exported from quasi-molecule amplifier 20.The configuration of monitoring module 30 is in amplification arteries and veins It washes off in the optical path of AP.
Monitoring module 30 includes the first beam splitter 31, the second beam splitter 32, energy sensor 33 and Wavelength monitor 34. The configuration of first beam splitter 31 is in the optical path of amplification pulsed light AP, a part of reflection amplification pulsed light AP.Second beam splitter 32 Configuration is in the optical path of the reflected light reflected by the first beam splitter 31, a part of reflective light.
Through being incident in energy sensor 33 through light for the second beam splitter 32.Energy sensor 33 includes for example to purple Outer light has the photodiode of sensitivity, for detecting the energy of incident light.I.e., the measurement of energy sensor 33 amplification pulsed light The pulse energy of AP.The measured value E of the pulse energy measured is sent to card for laser control unit 50 by energy sensor 33.
Wavelength monitor 34 is incident on by the reflected light that the second beam splitter 32 reflects.Wavelength monitor 34 includes calibrator point Light microscopic, and including diffuser plate (not shown), air gap calibrator, collector lens, line sensor and constitute.It is examined by line sensor The radius of the interference fringe generated by diffuser plate, air gap calibrator and collector lens is surveyed, to measure amplification pulsed light AP's Wavelength.The measured value λ of wavelength is sent to card for laser control unit 50 by Wavelength monitor 34.
It is supplied via shutter 40 to laser irradiation device 3 through the amplification pulsed light AP of the first beam splitter 31.Pass through laser Control unit 50 controls the switch motion of shutter 40 between opening state and closed state.Laser irradiation device 3 shines including laser Penetrate control unit 3a.Laser irradiation control unit 3a sends light emission trigger signal Tr0, target wavelength λ t, target to card for laser control unit 50 Pulse energy Et.
1.2 movement
Secondly, being illustrated to the movement for the laser aid 2 that the control based on card for laser control unit 50 carries out.Card for laser control unit 50 when receiving target wavelength λ t from laser irradiation control unit 3a, changes the oscillation wavelength of semiconductor laser 11, so that from The wavelength for the seed pulse light SP that solid state laser device 10 exports reaches target wavelength λ t.Specifically, card for laser control unit 50 is half Conductor laser 11 sets the wavelength data λ 1 for meeting following formula (2).
λ 1=4 λ t ... (2)
For example, wavelength data λ 1 is set as 773.6nm in the case that target wavelength λ t is 193.4nm.Card for laser control unit 50 When change is set in the wavelength data λ 1 of semiconductor laser 11, also carry out being included in wavelength via solid-state laser control unit 15 The control of each turntable in converting system 14.Specifically, card for laser control unit 50 is turntable rotation, so as to be incident on LBO crystalline substance The incident angle of the seed pulse light SP of body and KBBF crystal reaches the phase matched angle corresponding to target wavelength λ t.By This, the wavelength conversion efficiency of lbo crystal and KBBF crystal reaches maximum.
Card for laser control unit 50 is set when receiving target impulse energy Et from laser irradiation control unit 3a in charger 23 Charging voltage V corresponding to target impulse energy Et.Setting value of the charger 23 based on charging voltage V, to included in PPM22 Charging capacitor charge.
After card for laser control unit 50 sends irradiation enabling signal Ps to laser irradiation control unit 3a, card for laser control unit 50 is from laser When irradiation control unit 3a receives light emission trigger signal Tr0, card for laser control unit 50 sends light emission trigger signal to synchronous circuit 60 Tr0.Synchronous circuit 60 when receiving light emission trigger signal Tr0, generate the first internal trigger signal Tr1, from generate first After internal trigger signal Tr1 after trigger delay time Tmod, the second internal trigger signal Tr2 is generated.Synchronous circuit 60 First internal trigger signal Tr1 is inputted into quasi-molecule amplifier 20, the second internal trigger signal Tr2 is inputted into solid state laser device 10。
After inputting the first internal trigger signal Tr1 to quasi-molecule amplifier 20, correction unit 24 is triggered by the first internal trigger Signal Tr1 only postpones the delay time Tpac of the charging voltage V set based on card for laser control unit 50 in charger 23, to generate Switching signal S.I.e., triggering correction unit 24 is not dependent on charging voltage V but becomes fixed opportunity and will switch in time Tpat The switch 22a of signal S input PPM22, wherein time Tpat is that triggering correction unit is inputted from the first internal trigger signal Tr1 24 play the time until generating electric discharge.
After inputting the second internal trigger signal Tr2 to solid state laser device 10, semiconductor optical amplifier 12 is to from semiconductor The seed light as CW laser that laser 11 inputs carries out pulse amplifying, generates seed pulse light.By semiconductor optical amplifier The 12 seed pulse light generated are further amplified by Ti-doped sapphire amplifier 13, are incident on Wavelength conversion system 14.Wave Long converting system 14 generates the 4th higher hamonic wave light by the lbo crystal and KBBF crystal as nonlinear crystal.It is tied Fruit has the seed pulse light SP of target wavelength λ t (193.4nm) from the output of solid state laser device 10.
From triggering correction unit 24 to switch 22a input switch signal S, and whens by PPM22 progress pulse compression etc., Electric discharge is generated in the discharge space of quasi-molecule amplifier 20.Before generating the electric discharge, seed pulse light SP is filled from solid-state laser It sets 10 and is incident on discharge space.Seed pulse light SP is amplified by electric discharge, also, by convex mirror 25a and concave mirror 25b Between reflect, so that width of light beam is extended.It is amplified in discharge space, and the seed pulse light that width of light beam is extended SP is exported as amplification pulsed light AP from quasi-molecule amplifier 20.
Amplify pulsed light AP from the incident monitoring module 30 of quasi-molecule amplifier 20.By the first beam splitter 31 to be incident on prison A part depending on the amplification pulsed light AP of module 30 is sampled, and pulse energy and wavelength are measured.The measured value E of pulse energy and The measured value λ of wavelength is input to card for laser control unit 50.
Card for laser control unit 50 compares the measured value λ and target wavelength λ t of wavelength, and changes and be set in semiconductor laser 11 wavelength data λ 1, so that measured value λ is close to target wavelength λ t.Also, the measurement of the comparison pulse energy of card for laser control unit 50 Value E and target impulse energy Et controls the charging voltage V of charger 23, so that measured value E is close to target impulse energy Et.
In the case where shutter 40 is in an open state, laser irradiation is incident on by the amplification pulsed light AP of monitoring module 30 Device 3.The amplification pulsed light AP supplied from laser aid 2 is used for high molecular material, glass, ceramics etc. by laser irradiation device 3 In laser processing for processing object body.
1.3 project
In the case that the laser of ultraviolet band is used in laser processing, in order to improve the peak power of pulse, it is preferable that Chopped pulse width.In above-mentioned comparative example, it is preferable that the pulse of the seed pulse light SP in quasi-molecule amplifier 20 will be inputted Width is set as 1ns or so.In contrast, the discharge time (gain duration) of quasi-molecule amplifier 20 is several 10ns or so. In this way, the discharge time of quasi-molecule amplifier 20 is greater than seed arteries and veins in the case where seed pulse light SP is formed as short pulse The pulse width for washing SP off can not fill up discharge space within discharge time with seed pulse light SP.
If seed pulse light SP i.e., is formed as short pulse, there is the amplification effect reduced in quasi-molecule amplifier 20 The project of rate.Also, if seed pulse light SP is formed as short pulse, there is freely radiating in amplification pulsed light AP The increased project of ratio of big light (ASE).Moreover, seed pulse light SP is formed as short pulse, then exists and be easy to appear window The damage of the optical elements such as 21a, 21b, the project to shorten the working life.
The burst of 1.4 seed lights
In order to solve the above problems, seed pulse light SP can be formed to have and is held with the gain of quasi-molecule amplifier 20 The burst of continuous time corresponding time width.Specifically, as Fig. 3 is shown, by the burst seed pulse including multiple pulses Light BSP is incident on the discharge space of quasi-molecule amplifier 20 from solid state laser device 10.
The seed pulse light BSP that happens suddenly includes such as five pulses.The pulse width of each pulse is set as to be less than 1ns, by arteries and veins Punching interval is set as several ns.The whole pulse width of burst seed pulse light BSP is set as that (gain is lasting with above-mentioned discharge time Time) the corresponding value of Tg, such as several 10ns.Also, the repetition rate Rp for the seed pulse light BSP that happens suddenly is set as such as 1Hz extremely In the range of 6000Hz.In the case that repetition rate Rp is 6000Hz, the repetition period Tpr of burst seed pulse light BSP is about 167μs。
It is incident on the discharge space of quasi-molecule amplifier 20, by the seed pulse light BSP that will happen suddenly so as to discharge Discharge space is filled up with the seed pulse light BSP that happens suddenly in time.In this case, it as Fig. 3 is shown, needs to make the seed arteries and veins that happens suddenly The opportunity for washing BSP incidence discharge space off is consistent with the opportunity for generating electric discharge in discharge space.It should be noted that in Fig. 3, Appended drawing reference WF indicates the discharge waveform (gain waveform) by generation of once discharging.
If Fig. 4 A is shown, generated on the opportunity that burst seed pulse light BSP is incident on discharge space in discharge space In the opportunity of electric discharge almost consistent situation, the amplification efficiency in discharge space is improved, reduces the generation for freely radiating amplification light. Also, by the way that seed light is formed as the shape that happens suddenly, peak strength can be reduced, the damage of optical element is reduced.In such case Under, burst seed pulse light BSP by discharge space be amplified as a result, from quasi-molecule amplifier 20 export amplification happen suddenly arteries and veins The energy for washing BAP off reaches maximum.Wherein, the energy definition for amplifying burst light BAP is amplified by once discharging Amplify the sum of the pulse energy of each pulse of burst light BAP.
But as Fig. 4 B is shown, when burst seed pulse light BSP be incident on opportunity of discharge space in discharge space Generate electric discharge opportunity there is deviation in the case where, only some the pulse of burst seed pulse light BSP is amplified, other Pulse be not amplified, directly from quasi-molecule amplifier 20 export.In this case, amplify the energy of burst light BAP Amount is low when showing than Fig. 4 A.Also, it in this case, freely radiates amplification light to increase.
In this way, even if the seed pulse light for being incident on discharge space is formed as bursting, due to the seed pulse light that happens suddenly , there is project identical with above-mentioned comparative example in the deviation on the incident opportunity of BSP and opportunity of discharging.Wish to minimize the deviation, The energy for amplifying burst light BAP is maximized.
2, first embodiment
Secondly, being illustrated to the laser aid of the first embodiment according to the disclosure.In the following, for real according to first The laser aid for applying mode marks identical attached part identical with the constitution element of laser aid 2 according to comparative example Icon note, and description is omitted as appropriate.
2.1 constituting
Fig. 5 and Fig. 6 schematically illustrates the composition of laser aid 2a according to first embodiment.Implement according to first The laser aid 2a of mode includes solid state laser device 10a, the quasi-molecule amplifier 20a as PA, monitoring module as MO 30, shutter 40, card for laser control unit 50 and synchronous circuit 60.Moreover, laser aid 2a includes the first optical sensor 70, the second light Sensor 71, beam splitter 72 and timer 73.
In the first embodiment, solid state laser device 10a is configured to export above-mentioned burst seed pulse light BSP, right It is described in detail behind this point.Beam splitter 72 configures the seed between solid state laser device 10a and quasi-molecule amplifier 20a In the optical path of pulsed light BSP.A part in the reflection burst of beam splitter 72 seed pulse light BSP.
First optical sensor 70 is the photodiode for example to ultraviolet light with sensitivity, and receiving is reflected by beam splitter 72 Reflected light.First optical sensor 70 is sent to timer 73 after generating first detection signal D1 when receiving reflected light. I.e., the first optical sensor 70 is the sensor for detecting the opportunity that burst seed pulse light BSP is exported from solid state laser device 10a. It should be noted that the case where with comparative example is identically, quasi-molecule is incident on through the burst seed pulse light BSP of beam splitter 72 The discharge space of amplifier 20a.
In the first embodiment, the laser cavity 21 included in quasi-molecule amplifier 20a is formed with electric discharge observation window 21c.The configuration of second optical sensor 71 is in light-receiving surface and the observation opposite position window 21c of discharging.
Second optical sensor 71 receives to produce in the discharge space of quasi-molecule amplifier 20 via electric discharge observation with window 21c A part of raw discharging light.It include ultraviolet laser and visible light in discharging light.Second optical sensor 71 is for example to ultraviolet Perhaps there is visible light the sensor of sensitivity to be made of photodiode or photoelectric tube.Second optical sensor 71 is detecting When to discharging light, generates the second detection signal D2 and be simultaneously sent to timer 73.I.e., the second optical sensor 71 is that detection is empty in electric discharge Between it is middle generate electric discharge opportunity discharge sensor.
The calculating of timer 73 is played at the time of receiving first detection signal D1 from the first optical sensor 70 and is passed from the second light Delay time until at the time of sensor 71 receives the second detection signal D2.Timer 73 is defeated by the measured value D of delay time Enter to card for laser control unit 50.Card for laser control unit 50 is based on measured value D, and correction synchronous circuit 60 exports the first internal trigger signal Tr1 plays the trigger delay time Tmod until the second internal trigger signal Tr2 of output, is discussed in detail below.It needs to illustrate , the correction of trigger delay time Tmod, which is equivalent to correction, makes solid state laser device 10a output burst seed pulse light BSP's Opportunity.
In the first embodiment, as Fig. 6 is shown, solid state laser device 10a is including semiconductor laser 11, semiconductor On the basis of image intensifer 12, Ti-doped sapphire amplifier 13, Wavelength conversion system 14, solid-state laser control unit 15, including it is prominent Send out impulse generator 16.Burst generator 16 according to the setting data based on aftermentioned target burst data BPDt, Burst signals BPS is generated, is discussed in detail below.Burst generator 16 is by for example programmable function generator structure At.
There is the second internal trigger signal illustrated in the comparative example from the input of synchronous circuit 60 in burst generator 16 Tr2.Burst signals BPS is inputted semiconductor according to the input of the second internal trigger signal Tr2 by burst generator 16 Image intensifer 12.Burst signals BPS is current controling signal.Semiconductor optical amplifier 12 is believed according to the burst of input Number BPS, generates the seed pulse light of burst shape at change magnifying power, umber of pulse, pulse width and pulse spacing.With comparative example In the same manner, which is amplified by Ti-doped sapphire amplifier 13, carries out wavelength convert by Wavelength conversion system 14.Its As a result, exporting above-mentioned burst seed pulse light BSP from solid state laser device 10a.
Other than above-mentioned electric discharge observation is formed in laser cavity 21 with window 21c, quasi-molecule amplifier 20a with according to right The composition of the quasi-molecule amplifier 20 of ratio is identical.Quasi-molecule amplifier 20a enters from solid state laser device 10a to discharge space The opportunity for penetrating burst seed pulse light BSP discharges.Quasi-molecule amplifier 20a is by once discharging, amplification burst seed arteries and veins BSP is washed off, as amplification burst light BAP output.
Monitoring module 30 has composition identical with comparative example, samples to a part of amplification burst light BAP, The energy of amplification burst light BAP is measured by energy sensor 33.In the present embodiment, energy sensor 33 is as meter Measured value E measurement includes the sum of the energy of multiple pulses in an amplification burst light BAP.
Also, monitoring module 30 passes through the wavelength of the measurement amplification of Wavelength monitor 34 burst light BAP.Monitoring module 30 The value of the measured value λ of the measured value E and wavelength that amplify the energy of burst light BAP are sent to card for laser control unit 50.
It is supplied via shutter 40 to laser irradiation device 3 by the amplification burst light BAP of monitoring module 30.In this reality Apply in mode, include laser irradiation control unit 3a in laser irradiation device 3 by light emission trigger signal Tr0, target wavelength λ t, Target burst data BPDt is sent to card for laser control unit 50.Card for laser control unit 50 is sent to laser irradiation control unit 3a to be irradiated Enabling signal Ps.
Target burst data BPDt includes the wave of the desired amplification burst light BAP of regulation laser irradiation device 3 The various parameters of shape.Include such as target burst ENERGY E t in target burst data BPDt, be included in amplification burst Target frequency ft, target pulse width Twf, the umber of pulse m of pulse in pulsed light BAP.Umber of pulse m is at least 2 or more. In the present embodiment, umber of pulse m is set as " 5 ".
Identically as comparative example, card for laser control unit 50 compares the measured value λ and target wavelength λ t of wavelength, and change, which is located at, partly to be led The wavelength data λ 1 of body laser 11, so that measured value λ is close to target wavelength λ t.Also, the comparison burst arteries and veins of card for laser control unit 50 It rushes the measured value E and target burst ENERGY E t of energy, changes the charging voltage V of charger 23, so that measured value E is close to mesh Mark burst ENERGY E t.
2.2 definition
2.2.1 amplify the waveform of burst light
Fig. 7 shows the various parameters of the waveform of regulation amplification burst light BAP.Amplifying burst light BAP includes m A pulse P1~Pm.By n-th of pulse PnPeak strength be recorded as Ip (n), pulse width is recorded as Tw (n).Pulse width Tw It (n) is such as full width at half maximum.Also, from first pulse P1Play n-th of pulse PnUntil pulse spacing be recorded as Td (n). It includes parameter in target burst data BPDt that these parameters, which correspond to,.
2.2.2 the waveform of burst signals
It includes the burst arteries and veins generated of burst generator 16 in solid state laser device 10a that Fig. 8, which shows regulation, Rush the various parameters of the waveform of signal BPS.Accordingly with amplification burst light BAP, burst signals BPS includes m arteries and veins Rush signal G1~Gm.N-th of pulse signal GnSignal strength be Ipg (n), pulse width be Twg (n).Also, from first Pulse signal G1Play n-th of pulse signal GnUntil pulse spacing be Tdg (n).Pulse signal GnIt is rectangular shape. Based on target burst data BPDt, the value of these parameters is calculated by card for laser control unit 50.
2.3 movement
2.3.1 elemental motion opportunity
When Fig. 9 shows the basic movement in the laser generation movement of laser aid 2a according to first embodiment Machine.Firstly, synchronous circuit 60 receives light emission trigger signal Tr0 from laser irradiation control unit 3a via card for laser control unit 50.It is synchronous Circuit 60 almost generates the first internal trigger signal Tr1 when receiving light emission trigger signal Tr0 simultaneously, and is output to triggering Correction unit 24.
It should be noted that in the present specification, the laser generation movement of laser aid 2a includes putting quasi-molecule sometimes Big device 20a and solid state laser device 10a laser generation and the burst seed pulse light BSP from solid state laser device 10a output is same Step electric discharge.
Triggering correction unit 24 corrects above-mentioned time Tpac based on the setting value of charging voltage V, from input the first inside touching Signalling Tr1 rises by generating switching signal S and input switch 22a after time Tpac.Switch 22a is become by switching signal S When at on-state, after time Tpas, start to discharge in discharge space.The detection electric discharge of second optical sensor 71 is opened Opportunity beginning.It should be noted that the correction of the time Tpac carried out by triggering correction unit 24, always by control time Tpat It is fixed value.
Synchronous circuit 60 generates the after exporting the first internal trigger signal Tr1 and rising and have passed through trigger delay time Tmod Two internal trigger signal Tr2, and it is output to burst generator 16.When input has the second internal trigger signal Tr2, burst Burst signals BPS is inputted semiconductor optical amplifier 12 after certain time interval T mo0 by impulse generator 16.
Semiconductor optical amplifier 12 generates the seed pulse light of burst shape according to the input of burst signals BPS.This kind Subpulse light is amplified by Ti-doped sapphire amplifier 13, and by Wavelength conversion system 14 carry out wavelength convert as a result, from Solid state laser device 10a output burst seed pulse light BSP.Detect burst seed pulse light BSP's by the first optical sensor 70 Output opportunity.
The electric discharge that the burst seed pulse light BSP exported from solid state laser device 10a is incident on quasi-molecule amplifier 20a is empty Between.In discharge space, the incidence with burst seed pulse light BSP almost generates above-mentioned electric discharge simultaneously, to burst seed arteries and veins BSP is washed off to amplify.The burst seed pulse light BSP being amplified is as amplification burst light BAP, from quasi-molecule amplifier 20a output.
2.3.2 the correction process of trigger delay time
The output opportunity for exporting burst seed pulse light BSP from solid state laser device 10a passes through trigger delay time Tmod It is adjusted.Trigger delay time Tmod is set as burst seed pulse light BSP and plays incidence from solid state laser device 10a output Time until discharge space reaches target delay time Dt.Target delay time Dt is that burst seed pulse light BSP is defeated Enter to solid state laser device 10a play start electric discharge until the time required to.
In the case where the output opportunity for the seed pulse light BSP that happens suddenly is appropriate, burst seed pulse light BSP incidence electric discharge is empty Between opportunity and opportunity that electric discharge is generated in discharge space it is substantially uniform, the amplification efficiency for the seed pulse light BSP that happens suddenly is higher. In this case, the measured value D and target delay time Dt for the delay time that timer 73 measures are substantially uniform.
But for various reasons, there is deviation in the output opportunity of burst seed pulse light BSP, and machine is not proper when output In the case where, the opportunity of burst seed pulse light BSP incidence discharge space goes out with the opportunity for generating electric discharge in discharge space Existing deviation, the amplification efficiency decline of burst seed pulse light BSP.In this case, the measured value D of delay time prolongs with target There is difference between slow time Dt.
Figure 10 is the trigger delay time Tmod illustrated for making the measured value D of delay time close to target delay time Dt Corrective action flow chart.The corrective action is executed in laser generation movement.In the following, illustrating the corrective action.
The school of trigger delay time Tmod is executed after shutter 40 to be set as to opening state by laser irradiation control unit 3a Direct action.Firstly, trigger delay time Tmod is set as initial value Tmod0 (step S10) by card for laser control unit 50.Secondly, laser Control unit 50 sends the data (step S11) of trigger delay time Tmod to synchronous circuit 60.Secondly, card for laser control unit 50 is read in Target delay time Dt (step S12).
Secondly, card for laser control unit 50 is input to synchronous circuit 60 (step S13) after generating light emission trigger signal Tr0.At this moment, Card for laser control unit 50 is not necessarily to receive light emission trigger signal Tr0 from laser irradiation control unit 3a, is autonomously generated light emission trigger signal Tr0 And it is input to synchronous circuit 60.Synchronous circuit 60 exports the first internal trigger signal when input has light emission trigger signal Tr0 Tr1, after it have passed through trigger delay time Tmod from exporting the first internal trigger signal Tr1, output the second internal trigger letter Number Tr2.Output and the quasi-molecule amplifier 20a of the burst seed pulse light BSP from solid state laser device 10a are carried out as a result, Electric discharge.
For timer 73, from the first optical sensor 70 input on output opportunity of detection burst seed pulse light BSP the One detection signal D1, from the second detection of the second optical sensor 71 input signal D2 on detection electric discharge opportunity.Timer 73 is based on the One detection signal D1 and the second detection signal D2 measure delay time, and measured value D is output to 50 (step of card for laser control unit S14)。
50 formula based on following (3) of card for laser control unit calculate delay time measured value D and target delay time Dt it Poor △ D (step S15).
△ D=D-Dt ... (3)
Later, it after card for laser control unit 50 calculates poor △ D, corrects trigger delay time Tmod (step S16).Specifically, will The value of difference △ D is added as new trigger delay time Tmod in trigger delay time Tmod.Trigger delay time Tmod as a result, Appropriately change with the relational implementation of target delay time Dt.Card for laser control unit 50 sends the trigger delay being corrected to synchronous circuit 60 The data (step S17) of time Tmod.
Secondly, card for laser control unit 50 judges whether target delay time Dt is updated (step S18).The target delay time The update of Dt carries out in aftermentioned vibrational control.(the step when target delay time Dt is not updated of card for laser control unit 50 NO in S18), return process to step S13.Card for laser control unit 50 is when target delay time Dt is updated (in step S18 YES), step S12 is returned process to.
2.3.3 vibrational control
Figure 11 A and Figure 11 B are the flow charts of vibrational control process when showing the actual act of laser aid 2a.Figure 11A corresponds to the part of the oscillation preparatory action carried out before this oscillation action.Figure 11 B corresponds to this oscillation action Part.
In the following, illustrating the vibrational control of laser aid 2a.Firstly, shutter 40 is set as closed state by card for laser control unit 50 (step S20).Secondly, card for laser control unit 50 receives target burst data BPDt (step from laser irradiation control unit 3a S21).In step S21, card for laser control unit 50 carries out the processing that the process of Figure 12 illustrates.Card for laser control unit 50 is from reception The target burst data BPDt arrived, obtain target burst ENERGY E t, target frequency ft, target pulse width Twf with And umber of pulse m (step S40).
Secondly, card for laser control unit 50 utilizes target frequency ft, formula (4) based on following calculates target pulse interval Tdt (n) (step S41).
Tdt (n)=(n-1)/ft ... (4)
Wherein, n=1,2 ..., m.
Later, card for laser control unit 50 utilizes target pulse width Twf, and it is wide to calculate target pulse for formula (5) based on following It spends Twt (n) (step S42).
Twt (n)=Twt ... (5)
I.e., in the present embodiment, target pulse width Twt (n) is all set to fixed value Twf by card for laser control unit 50.
Figure 11 A is returned to, card for laser control unit 50 sends setting data (step S22) to burst generator 16.In the step In rapid S22, card for laser control unit 50 carries out the processing that the process of Figure 13 illustrates.Setting data includes signal strength Ipg (n), arteries and veins Punching interval Tdg (n), pulse width Twg (n), umber of pulse m.
Firstly, such as following formula (6) of card for laser control unit 50 is shown, setting signal intensity Ipg (n) (step S50).
Ipg (n)=Ipg0 ... (6)
I.e., signal strength Ipg (n) is set as fixed value Ipg0.Fixed value Ipg0 is for example according to target burst ENERGY E t It determines.
Secondly, such as following formula (7) of card for laser control unit 50 is shown, set pulse spacing Tdg (n) (step S51).
Tdg (n)=Tdt (n) ... (7)
I.e., pulse spacing Tdg (n) is set as target pulse interval Tdt (n).
Such as following formula (8) of card for laser control unit 50 is shown, and is set pulse width Twg (n) (step S52).
Twg (n)=Twt (n) ... (8)
I.e., pulse width Twg (n) is set as target pulse width Twt (n).
Card for laser control unit 50 includes signal strength Ipg (n), pulse spacing Tdg (n) by what is set in step S50~S52 And the setting data of pulse width Twg (n) are sent to burst generator 16 (step S53).
Figure 11 A is returned to, the charging voltage V of charger 23 is set as fixed value V0 (step S23) by card for laser control unit 50, solid Determine that solid state laser device 10a and quasi-molecule amplifier 20a is made to carry out laser generation movement (step in the case where charging voltage V S24).Specifically, card for laser control unit 50 is not necessarily to receive light emission trigger signal Tr0 from laser irradiation control unit 3a, but autonomous raw Synchronous circuit 60 is input to after.Light emission trigger signal Tr0 inputs synchronous circuit 60 with defined repetition rate Rp.Solid-state laser Device 10a and quasi-molecule amplifier 20a is synchronous with light emission trigger signal Tr0 to carry out above-mentioned laser generation movement.
It is synchronous with laser generation movement, if the process of Figure 14 illustrates, burst energy is carried out by energy sensor 33 The measurement of amount.Energy sensor 33 is detected in quasi-molecule amplifier 20a by the incidence of detection amplification burst light BAP Whether (step S60) is discharged in generation.When energy sensor 33 detects electric discharge (YES in step S60), burst energy is measured (step S61).Card for laser control unit 50 receives the measured value E of burst energy from energy sensor 33, and is written (not shown) In memory (step S62).Later, per when a discharge occurs, the processing of step S61 and step S62 is carried out.
Figure 11 A is returned to, card for laser control unit 50 carries out above-mentioned target delay time in carrying out laser generation action process The optimization (step S25) of Dt.In step S25, card for laser control unit 50 carries out the processing that the process of Figure 15 illustrates.Firstly, The value of counter J is set as " 1 " (step S70) by card for laser control unit 50, and target delay time Dt is set as initial value Dt0 (step S71).Initial value Dt0 corresponds to the value of the initial value Tmod0 of above-mentioned trigger delay time Tmod.Card for laser control unit 50 Initial value Tmod0 is set for synchronous circuit 60, as trigger delay time Tmod.
Card for laser control unit 50 judges whether to measure burst energy by energy sensor 33, and is stored in the meter of memory Measured value E is updated (step S72).Card for laser control unit 50 (YES in step S72) when measured value E is updated, from memory reading Measured value E (step S73) is correspondingly written in the table T1 shown in Figure 16 (step S74) with counter J.In Figure 16, E (J) Indicate measured value E corresponding with counter J.
Also, card for laser control unit 50 receives the measured value D (step S75) of delay time from timer 73, by what is received Measured value D and (step S76) in counter J correspondingly write in table T1.In Figure 16, D (J) indicates corresponding with counter J Measured value D.
Card for laser control unit 50 judges whether counter J is maximum value Jmax (step S77).Card for laser control unit 50 is in counter (NO in step S77) is set in current target delay time Dt as target delay time Dt when J is not maximum value Jmax In addition the value (step S78) of certain time △ Dt.At this moment, card for laser control unit 50 will subtract a timing from trigger delay time Tmod Between the value of △ Dt be located at synchronous circuit 60 as trigger delay time Tmod.Later, 1 (step is added in current counter J S79), return step S72.
During counter J becomes maximum value Jmax, repeat step S72~step S79 processing.Counter J becomes when maximum value Jmax (YES in step S77), and card for laser control unit 50 obtains E (J) from table T1 and becomes maximum D (J), by it As optimum delay time Dopt (step S80).Later, when target delay time Dt is set as optimal delay by card for laser control unit 50 Between Dopt (step S81).At this moment, card for laser control unit 50 sets triggering corresponding with optimum delay time Dopt in synchronous circuit 60 Delay time Tmod.
Figure 11 A is returned to, card for laser control unit 50 carries out feedback control (energy back control) (step of burst energy S26).In step S26, card for laser control unit 50 carries out the processing that the process of Figure 17 illustrates.Card for laser control unit 50 judges It is no that burst energy is measured by energy sensor 33, and the measured value E for being stored in memory is updated (step S90).Swash Photocontrol portion 50 (YES in step S90) in the case where measured value E is updated, from memory reading measured value E (step S91).
Secondly, 50 formula based on following (9) of card for laser control unit, measured value E and the target for calculating burst energy are prominent Send out the difference △ E of pulse energy Et.
△ E=E-Et ... (9)
Later, card for laser control unit 50 judge poor △ E whether in the permissible range that following formula (10) indicates (step S93)。
|△E|≤△Emax……(10)
Mark F1 is set as " 0 " (step by card for laser control unit 50 (YES in step S93) when poor △ E is in permissible range S94).On the other hand, mark F1 is set as " 1 " by card for laser control unit 50 (NO in step S93) when poor △ E is outside permissible range (step S95).Later, card for laser control unit 50 is based on difference △ E correction charging voltage V (step S96).Specifically, card for laser control unit 50 subtract in poor △ E from the setting value of current charging voltage V multiplied by defined yield value G as charging voltage V reset Value value.
Figure 11 A is returned to, whether 50 judgement symbol F1 of card for laser control unit is " 0 " (step S27).Card for laser control unit 50 is indicating When F1 is not " 0 " (NO in step S27), return step S26 executes the feedback control of burst energy again.On the other hand, Card for laser control unit 50 stops solid state laser device 10a and quasi-molecule amplifier when indicating that F1 is " 0 " (YES in step S27) The laser generation of 20a acts (step S28), and shutter 40 is set as opening state (step S29).By above step, terminate to swash The preparatory action of light device oscillation.
Secondly, being transferred to Figure 11 B, card for laser control unit 50 sends irradiation enabling signal Ps (step to laser irradiation control unit 3a S30).When card for laser control unit 50 receives light emission trigger signal Tr0 from laser irradiation control unit 3a, the luminous triggering that will receive Signal Tr0 inputs synchronous circuit 60, so that it is dynamic so that solid state laser device 10a and quasi-molecule amplifier 20a is carried out laser generation Make.Light emission trigger signal Tr0 is sent with repetition rate Rp from laser irradiation control unit 3a to card for laser control unit 50.
The feedback control (step S31) of the progress burst energy of card for laser control unit 50.Step S31 and step S26 phase Together, so omitting the description.Whether 50 judgement symbol F1 of card for laser control unit is " 0 " (step S32).Card for laser control unit 50 is in mark F1 When not being " 0 " (NO in step S32), shutter 40 is set as closed state (step S34), processing returns to extremely oscillation preparatory actions Step S23.
Card for laser control unit 50 judges to receive from laser irradiation control unit 3a when indicating that F1 is " 0 " (YES in step S32) Target burst data BPDt whether be updated (step S33).Card for laser control unit 50 is in target burst data BPDt When not being updated (NO in step S33), return step S31 carries out the feedback control of burst energy again.Another party Face, for card for laser control unit 50 when target burst data BPDt is updated (YES in step S33), processing returns to quasi- to vibrating The step S20 of standby movement.
It should be noted that card for laser control unit 50 properly carries out obtaining Wavelength monitor 34 in above-mentioned movement The wavelength control of the control of the measured value λ of wavelength and the semiconductor laser 11 based on measured value λ and target wavelength λ t, saves herein Explanation is omited.
2.4 effect
In the first embodiment, in the correction process of the trigger delay time Tmod of the measured value D based on timer 73 On the basis of, also based on the measured value E of burst energy, carry out appropriateization of target delay time Dt.Target delay time Appropriateization of Dt is to detect the movement for the optimum delay time Dopt that measured value E becomes maximum.To according to the first embodiment party The deviation on formula, the incident opportunity of the burst seed pulse light BSP of incident discharge space and opportunity of discharging becomes minimum, burst Energy becomes maximum.Moreover, according to first embodiment, burst seed pulse light BSP's in available discharge space is put Big efficiency becomes stable, the effect that burst energy becomes stable.
It should be noted that in the first embodiment, wavelength measurement has been carried out by Wavelength monitor 34, still, in nothing When need to carry out high-precision wavelength control, Wavelength monitor 34 can also be omitted.
Also, in the first embodiment, in order to detect the burst seed pulse light BSP from solid state laser device 10a Output opportunity, be provided with the first optical sensor 70 and beam splitter 72, however, it is also possible to omit these.This is because solid In state laser aid 10a, input of the output opportunity of burst seed pulse light BSP relative to the second internal trigger signal Tr2 It fluctuates smaller.The first optical sensor 70 and beam splitter 72 can not also be configured, is sent from card for laser control unit 50 to timer 73 Second internal trigger signal Tr2.In this case, the measurement of timer 73 receives the second internal trigger from card for laser control unit 50 Signal Tr2 play at the time of receiving the second detection signal D2 from the second optical sensor 71 until delay time, as above-mentioned Measured value D.
Also, electric discharge opportunity in the first embodiment, is detected by the second optical sensor 71, however, it is also possible to be not provided with Second optical sensor 71 calculates electric discharge opportunity by energy sensor 33.
3, second embodiment
Secondly, illustrating the laser aid according to second embodiment of the disclosure.It is filled according to the laser of second embodiment It sets on the basis of the function of laser aid according to first embodiment, further includes putting for control supply laser irradiation device 3 The function of the waveform of big burst light BAP.In the following, for the constitution element with laser aid 2a according to first embodiment Identical part marks identical appended drawing reference, and description is omitted as appropriate.
3.1 constituting
Figure 18 schematically illustrates the composition of the laser aid 2b according to second embodiment.Laser aid 2b is in monitoring mould It include pulse form analysis portion 80 between block 30 and card for laser control unit 50, monitoring module 30 has optical sensor 33a, carrys out generation with this For energy sensor 33.Other compositions of laser aid 2b are basic with the composition of laser aid 2a according to first embodiment It is upper identical.
Optical sensor 33a is the m pulse P that can be measured include in amplification burst light BAP1~PmEach light intensity The high speed light intensity sensor of waveform, is made of photodiode or photoelectric tube.Optical sensor 33a exports each pulse detected Light intensity waveform, as voltage signal.As the specific example of high speed light intensity sensor, can enumerate PIN photodiode or Double flat facial canal.
Pulse form analysis portion 80 is connected to optical sensor 33a.Pulse form analysis portion 80 will be inputted from optical sensor 33a Voltage signal be carried out at high speed AD (Analog to Digital) conversion, storage (not shown) is written as impulse waveform data In device.Pulse form analysis portion 80 carries out AD with such as 1ns sampling period below.Also, pulse form analysis portion 80 is based on The impulse waveform data of memory are written, measurement indicates the multiple parameters of the feature of each pulse, and each measured value is input to sharp Photocontrol portion 50.The parameter includes peak strength, pulse spacing, the pulse width, burst energy of each pulse.
In the present embodiment, the measured value E of burst energy by by pulse form analysis portion 80 to impulse waveform It is integrated to obtain.It should be noted that pulse form analysis portion 80 can be read in by analog integrator circuit (not shown) The peak value of output waveform, to measure burst energy.The analog integrator circuit can be for by quasi-molecule amplifier The circuit that the whole pulse energy for the amplification burst light BAP being amplified of once discharging of 20a is integrated.The analog integration The time of integration of circuit can be the more than discharge time of quasi-molecule amplifier 20a, such as can be tens ns or more and a few μ s Below.Also, pulse form analysis portion 80 can carry out Integral Processing by the impulse waveform to digital form, so that measurement is prominent Send out pulse energy.
Also, the target burst arteries and veins of card for laser control unit 50 in the present embodiment, is sent to from laser irradiation control unit 3a Rush the parameter and target burst energy that data BPDt includes multiple pulses that regulation includes in amplification burst light BAP Et.Specifically, target burst data BPDt includes the target peak intensity Ipt (n) of each pulse, target pulse interval Tdt (n), target pulse width Twt (n) and umber of pulse m.
3.2 movement
3.2.1 elemental motion opportunity
Figure 19 was shown according to the elemental motion opportunity in the laser generation of the laser aid 2b of second embodiment movement. In the present embodiment, as Figure 19 is shown, each signal strength of burst signals BPS is adjusted to be included in amplification burst arteries and veins The peak strength for washing each pulse in BAP off is roughly equal.This is because if by each signal strength of burst signals BPS It is set as certain, then includes the peak strength hair for amplifying each pulse in burst light BAP according to the shape of discharge waveform WF Changing.
3.2.2 the correction process of trigger delay time
The correction process of trigger delay time Tmod in second embodiment is identical with first embodiment.This embodiment party In formula, the processing that the process of Figure 10 illustrates is carried out, the trigger delay time relationship of Tmod and target delay time Dt is appropriate Change.
2.2.3 vibrational control
Figure 20 A and Figure 20 B are the flow charts of vibrational control process when showing the actual act of laser aid 2b.Figure 20A corresponds to the part of the oscillation preparatory action carried out before this oscillation action.Figure 20 B corresponds to this oscillation action Part.
In the following, illustrating the vibrational control of laser aid 2b.Identical with first embodimently, card for laser control unit 50 is by shutter 40 are set as closed state (step S100), receive target burst data BPDt (step from laser irradiation control unit 3a S101).In step S101, card for laser control unit 50 carries out the processing shown in Figure 21.Card for laser control unit 50 is from the mesh received It marks burst data BPDt and obtains target burst ENERGY E t, target peak intensity Ipt (n), target pulse interval Tdt (n), target pulse width Twt (n) and umber of pulse m (step S120).
Secondly, card for laser control unit 50 sends setting data (step S102) to burst generator 16.Set data packet Include signal strength Ipg (n), pulse spacing Tdg (n), pulse width Twg (n), umber of pulse m.Card for laser control unit 50 such as following public affairs Formula (11)~(13) are shown, and are sent to burst generator 16 after generating setting data.
Ipg (n)=Ipt (n) ... (11)
Tdg (n)=Tdt (n) ... (12)
Twg (n)=Tdt (n) ... (13)
Wherein, n=1,2 ..., m.
Secondly, identical with first embodimently, the charging voltage V of charger 23 is set as fixed value by card for laser control unit 50 V0 (step S103), make in the case where keeping charging voltage V certain solid state laser device 10a and quasi-molecule amplifier 20a into Row laser generation acts (step S104).It is synchronous with laser generation movement, if the process of Figure 22 illustrates, by impulse waveform point Analysis portion 80 carries out pulse form analysis.Firstly, the value of counter I is set as " 1 " (step S130) by pulse form analysis portion 80.Its Secondary, pulse form analysis portion 80 is by checking that optical sensor 33a detects amplification burst light BAP, so that detection is in standard point Electric discharge (step S60) whether is generated in sub- amplifier 20a.
Pulse form analysis portion 80 (YES in step S131) when detecting electric discharge, the output letter based on optical sensor 33a Number, measurement includes to amplify the impulse waveform of each pulse in burst light BAP, and memory is written as impulse waveform data (step S132).Pulse form analysis portion 80 judges whether counter I is maximum value Imax (step S133).Pulse form analysis Portion 80 (NO in step S133) when counter I is not maximum value Imax adds 1 (step S134) in current counter I, returns Return step S131.
During counter I becomes maximum value Imax, repeat step S131~step S134 processing.It is counting When number device I becomes maximum value Imax (YES in step S133), pulse form analysis portion 80 reads the multiple arteries and veins for being stored in memory Wave data is rushed, and is equalized (step S135).Specifically, pulse form analysis portion 80 is accumulative is stored in memory Imax impulse waveform data, and divided by Imax, so as to find out average.Maximum value Imax be for example 1~10000 range Interior value.
Later, impulse waveform data of the pulse form analysis portion 80 based on equalization, measurement burst energy, peak value are strong Degree, pulse spacing, target pulse width (step S136).Pulse form analysis portion 80 is by the measurement data of each pulse measured E, the table T2 (step S137) shown in Figure 23 is written in Ip (n), Td (n), Tw (n).Pulse form analysis portion 80 for example passes through measurement The full width at half maximum of each pulse finds out Tw (n).Later, per when a discharge occurs, step S130~step S137 processing is carried out.
Figure 20 A is returned to, card for laser control unit 50 optimizes above-mentioned target delay time Dt in laser generation action process (step S105).In step S105, card for laser control unit 50 carries out the processing that the process of Figure 24 illustrates.Only step S143 ~step S144 and step S151 are different from the first embodiment.Firstly, the value of counter J is set as by card for laser control unit 50 Target delay time Dt is set as initial value Dt0 (step S142) by " 1 " (step S141).
Card for laser control unit 50 judges whether the measurement data being stored in table T2 are updated (step S143).Card for laser control unit 50 when measuring data and being updated (YES in step S143), measured value Ip (the n) (step of peak strength is read from table T2 S144).Such as following formula (14) of card for laser control unit 50, which is shown, is added the measured value Ip (n) of reading, so that it is strong to calculate peak value The additive value Isum (J) (step S145) of degree.Additive value Isum (J) corresponds to burst energy.
Isum (J)=Ip (1)+Ip (2)+...+Ip (m) ... (14)
The table T3 shown in Figure 25 is correspondingly written in the additive value Isum (J) of calculating by card for laser control unit 50 with calculator J In (step S146).Also, card for laser control unit 50 receives the measured value D (step S147) of delay time from timer 73, will connect The measured value D received and (step S148) in counter J correspondingly write in table T3.
Card for laser control unit 50 judges whether counter J is maximum value Jmax (step S148).Card for laser control unit 50 is counting Device J is not to be set in current target in the case where maximum value Jmax (NO in step S148) as target delay time Dt and prolong Slow time Dt adds the value (step S149) of certain time △ Dt.Later, " 1 " (step S150) is added in current counter J, Return step S143.
During counter J becomes maximum value Jmax, repeat step S143~step S150 processing.Work as meter When number device J becomes maximum value Jmax (YES in step S148), card for laser control unit 50 obtains the D that Isum (J) becomes maximum from table T1 (J), as optimum delay time Dopt (step S151).Later, target delay time Dt is set as by card for laser control unit 50 Optimum delay time Dopt (step S152).At this moment, when card for laser control unit 50 is that the setting of synchronous circuit 60 corresponds to optimal delay Between Dopt trigger delay time Tmod.
Figure 20 A is returned to, the parameter feedback that card for laser control unit 50 carries out burst controls (step S106).In the step In S106, card for laser control unit 50 carries out the processing that the process of Figure 26 illustrates.The judgement of card for laser control unit 50 is stored in table T2 Whether measurement data are updated (step S160).Card for laser control unit 50 measure data be updated when (YES in step S160), from Table T2 reads the measured value Ip (n) of peak strength and the measured value Tw (n) (step S161) of pulse width.
Secondly, card for laser control unit 50 calculates the difference (step S162) of measurement waveform and target waveform.Specifically, laser controlling 50 formula based on following (15) of portion, calculates the difference △ Ip of the measured value Ip (n) and target peak intensity Ipt (n) of peak strength (n).Also, 50 formula based on following (16) of card for laser control unit, measured value Tw (n) and the target pulse for calculating pulse width are wide Spend the difference △ Tw (n) (step S162) of Twt (n).
△ Ip (n)=Ip (n)-Ipt (n) ... (15)
△ Tw (n)=Tw (n)-Twt (n) ... (16)
Herein, the difference of the measured value Td (n) and target pulse interval Tdt (n) in pulse spacing are not calculated, still, and It is not limited to this, the difference can also be calculated.
Whether card for laser control unit 50 judges the difference for measuring waveform and target waveform in permissible range (step S163).Specifically Ground, card for laser control unit 50 judges poor △ Ip (n) whether in the permissible range indicated with following formula (17), moreover, difference △ Whether Tw (n) is in the permissible range indicated with following formula (18).
|△Ip(n)|≤△Ipmax(n)……(17)
|△Tw(n)|≤△Twmax(n)……(18)
Card for laser control unit 50 poor △ Ip (n) and difference △ Tw (n) respectively in permissible range when (in step S163 YES), mark F2 is set as " 0 " (step S164).On the other hand, card for laser control unit 50 is in poor △ Ip (n) and difference △ Tw (n) When at least any one is outside permissible range (NO in step S163), will mark F2 be set as " 1 " (step S165).
Card for laser control unit 50 is based on difference △ Ip (n) and difference △ Tw (n), corrects burst signals BPS (step S166). Specifically, the signal strength Ipg (n) and pulse width Twg (n) in burst signals BPS are corrected.Card for laser control unit 50 will be from Current signal strength Ipg (n), which is subtracted, is set as new signal strength multiplied by the value of the value of defined yield value Kn in poor △ Ip (n) Ipg(n).Also, card for laser control unit 50 will be subtracted in poor △ Tw (n) from current pulse width Twg (n) multiplied by defined gain The value of the value of value Ln is set as new pulse width Twg (n).
The burst signals BPS of correction is sent burst generator 16 (step S167) by card for laser control unit 50. The waveform of burst seed pulse light BSP is corrected from solid state laser device 10a as a result,.
Figure 20 A is returned to, whether judgement symbol F2 is " 0 " (step S107).Card for laser control unit 50 is not when indicating F2 is " 0 " (NO in step S107), return step S106 carry out the parameter feedback control of burst again.On the other hand, laser controlling Portion 50 enters step S108 when indicating that F2 is " 0 " (YES in step S107), carries out the feedback control of burst energy.It should Step S108 is identical as the step S26 for the first embodiment that the flow chart by Figure 17 illustrates, so the description thereof will be omitted.It needs Illustrate, as the measured value E of the burst energy in step S108, pulse form analysis portion 80 can also be used to pass through The measured value that impulse waveform Integral Processing is measured, can also use above-mentioned additive value Isum (J).
Whether 50 judgement symbol F1 of card for laser control unit is " 0 " (step S109), (the step S109 when indicating that F1 is not " 0 " Middle NO), return step S108 executes the feedback control of burst energy again.On the other hand, card for laser control unit 50 is indicating When F1 is " 0 " (YES in step S109), stop the laser generation movement of solid state laser device 10a and quasi-molecule amplifier 20a Shutter 40 is set as opening state (step S111) by (step S110).By above step, the preparation for terminating laser oscillation is dynamic Make.
Secondly, being transferred to Figure 20 B, card for laser control unit 50 sends irradiation enabling signal Ps (step to laser irradiation control unit 3a S112).After card for laser control unit 50 receives light emission trigger signal Tr0 from laser irradiation control unit 3a, the acropoma that will receive Signalling Tr0 is input to synchronous circuit 60, so that solid state laser device 10a and quasi-molecule amplifier 20a be made to carry out laser vibration Swing movement.Light emission trigger signal Tr0 is sent with repetition rate Rp from laser irradiation control unit 3a to card for laser control unit 50.
Secondly, whether the measurement data for the burst energy that the judgement of card for laser control unit 50 is stored in table T2 are updated (step Rapid S113).Card for laser control unit 50 repeats sentencing for step S113 when measuring data and not being updated (NO in step S113) It is disconnected.Card for laser control unit 50 enters step S114 when measuring data and being updated (YES in step S113).In step S114, swash The feedback control of the progress of photocontrol portion 50 burst energy.Step S114 is identical as step S108, so the description thereof will be omitted. Secondly, the parameter feedback for carrying out burst controls (step S115).Step S115 is identical as step S106, so omitting it Explanation.
Whether 50 judgement symbol F1 of card for laser control unit and mark F2 is " 0 " (step S116).Card for laser control unit 50 exists Indicate when F1 or mark F2 are not " 0 " (NO in step S116), shutter 40 is set as closed state (step S118), will be handled Return to the step S103 of oscillation preparatory action.
Card for laser control unit 50 judges when indicating that F1 and mark F2 are " 0 " (YES in step S116) from laser irradiation Whether the received target burst data BPDt of control unit 3a is updated (step S117).Card for laser control unit 50 happens suddenly in target (NO in step S117), return step S113 when pulse data BPDt is not updated.On the other hand, card for laser control unit 50 is in mesh When mark burst data BPDt is updated (YES in step S117), by processing returns to the step S100 of oscillation preparatory action.
Identical with first embodimently, card for laser control unit 50 suitably carries out the meter of the wavelength of the progress of Wavelength monitor 34 The wavelength control of the acquirement of measured value λ and the semiconductor laser 11 based on measured value λ and target wavelength λ t.
3.3 effect
According to second embodiment, the waveform of amplification burst light BAP can control.Also, according to the second embodiment party Formula, the measurement waveform of the amplification burst light BAP of measurement supply laser irradiation device 3 and the difference of target waveform, and correct The waveform of burst seed pulse light BSP, so that difference becomes smaller.I.e., according to second embodiment, target burst data are based on BPDt can make the waveform of amplification burst light BAP close to target waveform.
It should be noted that in this second embodiment, in the optimization processing of target delay time Dt, based on will include The additive value Isum (J) that the peak strength of each pulse in amplification burst light BAP is added has found out optimum delay time Dopt.As a kind of replacement, identical with first embodimently, the measured value E (J) for being also based on burst energy is found out Optimum delay time Dopt.In that case it is preferable that being provided in monitoring module 30 other than optical sensor 33a Energy sensor 33 same as the first embodiment measures burst energy by energy sensor 33.Use can also be set In the beam splitter for guiding light to energy sensor 33.
4, third embodiment
Secondly, illustrating the laser aid according to third embodiment of the disclosure.It is filled according to the laser of third embodiment It sets on the basis of according to the function of the laser aid of second embodiment, further includes that control is included in supply laser irradiation device The function of the wavelength of each pulse in 3 amplification burst light BAP.In the following, for the laser according to second embodiment The identical part of the constitution element of device 2b marks identical appended drawing reference, and description is omitted as appropriate.
4.1 constituting
Figure 27 and Figure 28 schematically illustrates the composition of the laser aid 2b according to third embodiment.Laser aid 2b The solid state laser device 10b of wavelength can be changed including each pulse for burst light, and Wavelength monitor 34 can be with Wavelength is measured for each pulse.Laser aid 2c it is other constitute with according to the laser aid 2b's of second embodiment It constitutes essentially identical.
In the present embodiment, Wavelength monitor 34 is for including the m pulse P amplified in burst light BAP1~ PmMeasurement wavelength is carried out respectively.Wavelength monitor 34 is by each pulse PnMeasurement wavelength as measurement wavelength data λ (n) be output to Card for laser control unit 50.Also, it in the present embodiment, sends from laser irradiation control unit 3a to card for laser control unit 50 for each arteries and veins Rush PnTarget wavelength λ t (n).
If Figure 28 is shown, solid state laser device 10b include the first semiconductor laser~m semiconductor laser 111~ 11m, the first semiconductor optical amplifier~121~12m of m semiconductor optical amplifier and bundling device 90.Also, solid-state laser fills Setting 10b includes Ti-doped sapphire amplifier 13, Wavelength conversion system 14, solid-state laser control unit 15 and burst generator 16.Wherein, m corresponds to above-mentioned umber of pulse m.
First semiconductor laser~111~11m of m semiconductor laser is respectively provided with and first embodiment and The identical composition of semiconductor laser 11 in two embodiments.First semiconductor laser~m semiconductor laser 111~ 11m is individually equipped with wavelength data.Card for laser control unit 50 is that the n-th semiconductor laser 11n sets wavelength data λ n.
First semiconductor optical amplifier~121~12m of m semiconductor optical amplifier be respectively provided with and first embodiment with And the identical composition of semiconductor optical amplifier 12 in second embodiment.N-th semiconductor optical amplifier 12n configuration is corresponding to The position of n-th semiconductor laser 11n, incidence have the laser exported from the n-th semiconductor laser 11n.It is generated from burst Device 16 inputs burst signals BPS to the first semiconductor optical amplifier~121~12m of m semiconductor optical amplifier.The n-th half There is corresponding with signal strength Ipg (n), pulse width Twg (n) and pulse spacing Tdg (n) input in conductor image intensifer 12n Pulse signal Gn。
Bundling device 90 includes that multiple high reflection mirrors 91 and multiple half-mirrors 92 are constituted.It is appropriate according to umber of pulse m The quantity of ground change high reflection mirror 91 and half-mirror 92.Bundling device 90 will be from the first semiconductor optical amplifier~m half 121~12m of conductor image intensifer output multiple laser be combined into optical path it is consistent with an optical path axis after export.From bundling device Above-mentioned Ti-doped sapphire amplifier 13 and Wavelength conversion system 14 are configured in the optical path of 90 output light.
Solid state laser device 10b is located at the first semiconductor laser~111~11m of m semiconductor laser by control Wavelength data λ 1~λ m, so as to individually change from solid state laser device 10b export burst seed pulse light BSP it is each The wavelength of pulse.
4.2 movement
4.2.1 vibrational control
Figure 29 A and Figure 29 B are the flow charts of vibrational control process when showing the actual act of laser aid 2c.In addition to It is increased on the flow chart shown in Figure 20 A and Figure 20 B except step S200~step S203, the flow chart and second is implemented Mode is essentially identical.Step S200 increases between step S102 and step S103.Step S201 and step S202 increases Between step S105 and step S106.Step S203 increases between step S115 and step S116.
In the following, illustrating third embodiment with second embodiment difference.In the present embodiment, in step S101, if Figure 30 is shown, other than above-mentioned target burst data BPDt, card for laser control unit 50 is directed to each pulse Target wavelength λ t (n) (step S210) is received from laser irradiation control unit 3a.
In step s 200, card for laser control unit 50 is the first semiconductor laser~m half via solid state laser device 10b 111~11m of conductor laser sets 1~λ of wavelength data λ m.Specifically, as Figure 31 is shown, card for laser control unit 50 is based on target wave Long λ t (n) calculates the wavelength data λ n (step S220) for meeting following formula (19).
λ n=4 λ t (n) ... (19)
Later, wavelength data 1~λ of λ m of calculating is sent to the first semiconductor laser~m half by card for laser control unit 50 111~11m of conductor laser (step S221).
In the present embodiment, the basis of Figure 22 pulse form analysis control illustrated is utilized in this second embodiment On, card for laser control unit 50 also carries out the wavemeter observing and controlling system that the process of Figure 32 illustrates.Specifically, by optical sensor 33a or The second optical sensor of person 71 detects in quasi-molecule amplifier 20a whether generate electric discharge (step S230).
Wavelength monitor 34 (YES in step S230) when detecting electric discharge, measurement are included in amplification burst light BAP In each pulse wavelength (step S231).Card for laser control unit 50 receives measurement wavelength data λ (1)~λ from Wavelength monitor 34 (m), and memory (step S232) (not shown) is written.Later, per when a discharge occurs, step S231 and step are carried out The processing of S232.
In step s 201, the wavelength feedback control that the process that card for laser control unit 50 carries out Figure 33 illustrates.Specifically, swash Photocontrol portion 50 judges whether the measurement wavelength data for being stored in memory is updated (step S240).Card for laser control unit 50 is being counted (YES in step S240) when wavelength data is updated is surveyed, reads measurement wavelength data λ (n) (step S241) from memory.
Secondly, card for laser control unit 50 calculates the difference (step S242) of measurement wavelength and target wavelength.Specifically, laser controlling 50 formula based on following (20) of portion calculates the difference △ λ (n) of measurement wavelength data λ (n) and target wavelength λ t (n).
△ λ (n)=λ (n)-λ t (n) ... (20)
Until the calculating is proceeded to m from n is 1 by card for laser control unit 50.
Card for laser control unit 50 judges to measure wavelength and target wavelength difference whether in permissible range (step S243).Specifically Whether ground, card for laser control unit 50 judge poor △ λ (n) in the permissible range indicated with following formula (21).
|△λ(n)|≤△λmax(n)……(21)
This is judged to carry out until m from n is 1 by card for laser control unit 50.
When all difference △ λs (n) of the card for laser control unit 50 until n plays m for 1 are in permissible range (in step S243 YES), mark F3 is set as " 0 " (step S244).On the other hand, card for laser control unit 50 n be 1 play m until at least one When a difference △ λ (n) is outside permissible range (NO in step S243), mark F3 is set as " 1 " (step S245).
Card for laser control unit 50 is based on difference △ λ (n), tuning wavelength data λ n (step S246).Specifically, from wavelength data λ n It subtracts in poor △ λ (n) multiplied by the value of the value of " 4 " as new wavelength data λ n.Card for laser control unit 50 is by the measurement wavelength of correction Data λ (1)~λ (m) is sent to the first semiconductor laser~m 111~11m of semiconductor laser (step S247).As a result, Solid state laser device 10a correct respectively include happen suddenly seed pulse light BSP in each pulse wavelength.
In the step S202 of Figure 29 A, whether 50 judgement symbol F3 of card for laser control unit is " 0 ", when indicating F3 is not " 0 " (NO in step S202), the process returns to step S201.On the other hand, (the step when indicating that F3 is " 0 " of card for laser control unit 50 YES in S202), processing is transferred to step S106.
The step S203 of Figure 29 B is identical as step S201, so the description thereof will be omitted.In the present embodiment, in step In step S116 after S203,50 judgement symbol F1~F3 of card for laser control unit whether all " 0 ".Card for laser control unit 50 is being marked When at least one of will F1~F3 is not " 0 " (NO in step S116), processing is transferred to step S118.Card for laser control unit 50 exists When indicating all " 0 " F1~F3, processing is transferred to step S117.
Other movements of laser aid 2c according to the present embodiment are identical as second embodiment.
4.3 effect
According to third embodiment, on the basis of the waveform of the amplification burst light BAP of supply laser irradiation device 3 On, can also control include each pulse in waveform wavelength.Also, according to third embodiment, measurement is included in amplification The measurement wavelength of each pulse in burst light BAP and the difference of target wavelength, and be that difference becomes by the wavelength calibration of each pulse It is small.
It should be noted that in the third embodiment, having carried out wavelength measurement by Wavelength monitor 34, still, being not necessarily to When carrying out high-precision wavelength control, Wavelength monitor 34 can also be omitted.In this case, card for laser control unit 50 can be set The oscillation wavelength for determining solid state laser device 10a, the feedback control without wavelength.
5, the variation of solid state laser device
5.1 first variation
5.1.1 constituting
In the following, illustrating the first variation of solid state laser device.Figure 34 shows the solid-state laser according to first variation The composition of device 10c.Solid state laser device 10c includes the first solid state laser device 211, the second solid state laser device 212, color separation Mirror 213, high reflection mirror 214, Wavelength conversion system 215, synchronous circuit 216 and solid-state laser control unit 217.
First solid state laser device 211 includes the first semiconductor laser 220, the first semiconductor optical amplifier 221, first Amplifier 222 and wavelength conversion section 223.First amplifier 222 include fiber amplifier 222a, solid-state amplifier 222b and CW (not shown) motivates semiconductor laser.Wavelength conversion section 223 includes lbo crystal 223a and clbo crystal 223b.
First semiconductor laser, 220 single-vertical mode, the CW light for being about 1030nm as the first seed light output wavelength.The Semiconductor laser 220 is such as distributed feedback type semiconductor laser.First semiconductor optical amplifier 221 is by the first seed The laser of pulse width as defined in being generated after Optical pulse amplification.In the following, swashing what is generated by the first semiconductor optical amplifier 221 Light is known as the first seed pulse light.
Fiber amplifier 222a is that multistage is connected with the component for being doped with multiple silica fibres of Yb.Solid-state amplifier 222b It is the YAG crystal for being doped with Yb.Fiber amplifier 222a and solid-state amplifier 222b from CW (not shown) excitation by partly leading The CW excitation light of body laser input is by light stimulus.First amplifier 222 to from the first semiconductor optical amplifier 221 it is incident the One seed pulse light amplifies.
Wavelength conversion section 223 carries out wavelength convert to the first seed pulse light amplified by the first amplifier 222, and It is exported as the first pulse laser PL1.Specifically, wavelength conversion section 223 includes lbo crystal 223a and clbo crystal 223b, from And the 4th higher hamonic wave for being about 257.5nm according to the first seed pulse photogenerated wavelength, and as the first pulse laser PL1 output.
Second solid state laser device 212 includes the second semiconductor laser 230, the second semiconductor optical amplifier 231, second Amplifier 232 and burst generator 233.Second semiconductor laser 230, the second semiconductor optical amplifier 231 and Burst generator 233 constitutes burst seed pulse generator 234.Second amplifier 232 includes that Er optical fiber (not shown) is put Big device and CW (not shown) motivate semiconductor laser, and multistage be connected with is doped with the multiple of Er and Yb in Er fiber amplifier Silica fibre.
Second semiconductor laser 230 is single-vertical mode, as the CW light that second seed light output wavelength is about 1554nm. Second semiconductor laser 230 is, for example, distributed feedback type semiconductor laser.Preferably, 230 structure of the second semiconductor laser As the temperature setting by change semiconductor, thus it is possible to vary oscillation wavelength.
Burst generator 233 has composition identical with the burst generator 16 in first embodiment.It is prominent Send out impulse generator 233 the burst signals BPS received from card for laser control unit 50 via solid-state laser control unit 217 is defeated Enter the second semiconductor optical amplifier 231.Second semiconductor optical amplifier 231 is based on burst signals BPS, by second of sub-light Be converted to the laser of burst shape.In the following, the laser of the burst shape generated by the second semiconductor optical amplifier 231 is known as second Seed pulse light.
It include the Er fiber amplifier in the second amplifier 232 by motivating semiconductor laser defeated from CW (not shown) The CW excitation light entered is by light stimulus.Second amplifier 232 is to the second seed pulse incident from the second semiconductor optical amplifier 231 Light amplifies.As burst light PL2, the second seed pulsed light of the second amplifier 232 output amplification.
The configuration of dichronic mirror 213 is in the pulse laser PL1 exported from the first solid state laser device 211 by incident position.It is high Reflecting mirror 214 is configured to the burst light PL2 that high reflection is exported from the second solid state laser device 212, and by high reflection Burst light PL2 is incident on dichronic mirror 213.
It is coated in dichronic mirror 213 such as lower film, which makes the pulse laser PL1 high transmission of wavelength about 257.5nm, and The burst light PL2 that high reflection wavelength is about 1554nm.Dichronic mirror 213 is configured to the optical path of the pulse laser PL1 of high transmission Axis is consistent with the optical path axis of burst laser PL2 of high reflection.
Wavelength conversion system 215 includes the first clbo crystal 240, the second clbo crystal 241, the first turntable 242, second Turntable 243, the first dichronic mirror 244, the second dichronic mirror 245 and high reflection mirror 246.
First clbo crystal 240, the first dichronic mirror 244, the second clbo crystal 241, the second dichronic mirror 245 are according to the sequence Configuration is in the optical path of pulse laser PL1 and burst laser PL2.Pulse laser PL1 and burst laser PL2 are incident To the first clbo crystal 240.
In the first clbo crystal 240, pulse laser PL1 and burst laser PL2 overlapping generate and correspond to wavelength about The burst laser PL3 with frequency and wavelength about 220.9nm of 257.5nm and wavelength about 1554nm.The arteries and veins not being wavelength-converted Impulse light PL1 and burst laser PL2 penetrates the first clbo crystal 240.
It is coated with following film on the first dichronic mirror 244, film high reflection pulse laser PL1, and swash burst Light PL2 and burst laser PL3 high transmission.Burst laser PL2, PL3 of the first dichronic mirror of high transmission 244 are incident on Two clbo crystals 241.
In the second clbo crystal 241, burst laser PL2 and burst laser PL3 overlapping generate and correspond to wave It is about the burst laser PL4 with frequency and wavelength about 193.4nm of 1554nm and wavelength about 220.9nm.It is not wavelength-converted Burst laser PL2, PL3 penetrate the second clbo crystal 241.
It is coated with following film on the second dichronic mirror 245, film high reflection burst laser PL4, and make to happen suddenly Pulse laser PL2, PL3 high transmission.High reflection mirror 246 is configured by the burst laser PL4 of 245 high reflection of the second dichronic mirror By after high reflection from the position that Wavelength conversion system 215 exports.Burst light PL4 corresponds to above-mentioned burst seed pulse light BSP。
First turntable 242 rotatably keeps the first clbo crystal 240.Second turntable 243 is with rotatable side Formula keeps the second clbo crystal 241.
Solid-state laser control unit 217 controls the spinning movement of the first turntable and the second turntable 242,243.Also, Solid-state laser control unit 217 controls the movement of the first semiconductor laser 220 and burst generator 233.
5.1.2 movement
Secondly, illustrating the movement of solid state laser device 10c.Figure 35 shows the swashing as MO by solid state laser device 10c Elemental motion opportunity in the laser generation movement of electro-optical device.
Solid-state laser control unit 217 receives target burst number via card for laser control unit 50 from laser irradiation control unit 3a According to BPDt.Target burst data BPDt is sent to burst generator 233 as setting data.
Synchronous circuit 216 generates in third when having the second internal trigger signal Tr2 from the above-mentioned input of synchronous circuit 60 Portion trigger signal Tr3 and the 4th internal trigger signal Tr4.Third internal trigger signal Tr3 is input to the first semiconductor optical amplification Device 221.4th internal trigger signal Tr4 is input to burst generator 233.
First semiconductor optical amplifier 221 is according to the input of third internal trigger signal Tr3, to from the first semiconductor laser The first seed light that device 220 exports carries out pulse amplifying, and generates the first seed pulse light.Wherein, as Figure 35 is shown, first Semiconductor optical amplifier 221 keeps the whole pulse width of the pulse width ratio burst of the first seed pulse light longer.
The first seed pulse light is incident on wavelength conversion section 223 after the first amplifier 222 is further amplified.Wave Long converter section 223 is according to incident the 4th higher hamonic wave light of the first seed pulse photogenerated.4th higher hamonic wave light is as arteries and veins Impulse light PL1 is exported from the first solid state laser device 211.
After inputting the 4th internal trigger signal Tr4 to burst generator 233, the second semiconductor optical amplifier 231 Based on burst signals BPS, pulse amplifying is carried out to second of the sub-light exported from the second semiconductor optical amplifier 231, and And generate the second seed pulsed light of burst shape.The second seed pulsed light is made after the second amplifier 232 is further amplified It is exported for burst light PL2 from the second solid state laser device 212.
Pulse laser PL1 and burst light PL2 are incident on Wavelength conversion system 215.Synchronous circuit 216 adjusts in third The opportunity of portion trigger signal Tr3 and the 4th internal trigger signal Tr4, so that in Wavelength conversion system 215, pulse laser PL1 It is Chong Die with all burst light PL2 in time.As a result, from Wavelength conversion system 215 as burst seed pulse light The burst light PL4 that BSP output wavelength is about 193.4nm.
5.1.3 effect
Solid state laser device 10c generates and exports the output light from the first solid state laser device 211 and consolidates from second The output light of state laser aid 212 and frequency light component, can export high-intensitive burst seed pulse light BSP.
Also, solid state laser device 10c will be by that will be formed as prominent from the second output light of the second solid state laser device 212 Hair pulse is to generate burst seed pulse light BSP, rather than by the first output light shape from the first solid state laser device 211 As burst.The wavelength of first output light is about 257.5nm, in contrast, the wavelength of the second output light is about 1554nm, So improving the peak of each pulse compared with the case where output light from the first solid state laser device 211 is formed as to burst shape It is worth intensity, improves wavelength conversion efficiency.Moreover, when by by less the second output light of nonlinear crystal number be formed as happening suddenly When shape, it is easy to change wavelength.
It should be noted that burst shape can also be all formed as the first output light and the second output light two.? In this case, the burst generator for the first semiconductor optical amplifier 221 is further set, by synchronous circuit 216 Keep the first output light synchronous with the output opportunity of the second output light.
5.2 second variations
5.2.1 constituting and acting
In the following, illustrating the second variation of solid state laser device.Figure 36 and Figure 37 is shown according to the second variation The composition of solid state laser device 10d.Identically as the above-mentioned solid state laser device 10b according to third embodiment, solid-state swashs Electro-optical device 10d can change wavelength for each pulse of burst light.Solid state laser device 10d has burst seed arteries and veins Rush generator 300, with this come replace burst seed pulse generator 234, in addition to this have with according to third embodiment The identical composition of solid state laser device 10b.
If Figure 37 is shown, burst seed pulse generator 300 is generated including burst same as the third embodiment Device 16, the first semiconductor laser~111~11m of m semiconductor laser, the first semiconductor optical amplifier~m semiconductor 121~12m of image intensifer and bundling device 301.The bundling device 301 of this variation is made of multiple optical fiber, and optical fiber passes through welding, It is connected to other optical fiber.Multiple input terminals of bundling device 301 are connected with the first semiconductor optical amplifier~m semiconductor light and put 121~12m of big device, output end are connected with the second above-mentioned amplifier 232.Bundling device 301 is combined from the first semiconductor optical amplification The optical path of the multiple laser of device~121~12m of m semiconductor optical amplifier output.
In this variation, identically as third embodiment, it is sent out from laser irradiation control unit 3a to card for laser control unit 50 It send for including the target wavelength λ t (n) for amplifying each pulse Pn in burst light BAP.In this variation, by solid-state Laser aid 10d is generated and frequency light, so card for laser control unit 50 is based on target wavelength λ t (n), calculating meets following formula (22) the first semiconductor laser~111~11m of m semiconductor laser is sent to after wavelength data λ bn.
λ bn=2/ (1/ λ t (n) -1/257.5) ... (22)
The movement of solid state laser device 10d is identical as according to the movement of solid state laser device 10c of first variation.And And the movement for the seed pulse generator 300 that happens suddenly is identical as third embodiment.
6, laser-processing system
6.1 constituting
Figure 38 is the figure for showing the laser-processing system 400 using laser aid of the invention.In addition to above-mentioned laser shines It penetrates except control unit 3a, laser irradiation device 3 includes workbench 433, XYZ stage 434, optical system 436, casing 437 and frame Frame 438.Optical system 436 configures in casing 437.Casing 437 and XYZ stage 434 are fixed on frame 438.Laser aid 2a and Casing 437 is connected by optical path pipe 5.
Workbench 433 supports machined object 441.Pair that machined object 441 is irradiated with pulse laser to be laser machined As e.g. including the material of carbon atom.XYZ stage 434 supports workbench 433.XYZ stage 434 can be to X-direction, Y-axis side It is mobile to, Z-direction, by adjusting the position of workbench 433, the position of adjustable machined object 441.XYZ stage 434 adjusts The position of machined object 441, so as to irradiate the pulse laser emitted from optical system 436.
Optical system 436 for example has high reflection mirror 436a~436c and collector lens 436d.High reflection mirror 436a~ 436c and collector lens 436d are individually fixed in bracket (not shown), configure in defined position in casing 437.
High reflection mirror 436a~436c is with the pulse laser of high reflectance reflection ultraviolet region.High reflection mirror 436a is anti-towards height Pulse laser of the mirror 436b reflection from laser aid 2a incidence is penetrated, high reflection mirror 436b swashs to high reflection mirror 436c reflected impulse Light.High reflection mirror 436c is to collector lens 436d reflected impulse laser.High reflection mirror 436a~436c for example in synthetic quartz or The surface for the transparent substrate that calcirm-fluoride is formed is coated with the reflectance coating of high reflection pulse laser.
Collector lens 436d is configured to incident pulse laser via 442 optically focused of window on the surface of machined object 441. The configuration of window 442 is in the optical path between collector lens 436d and machined object 441, to be sealed in shape by O ring (not shown) It is fixed at the state of the opening in casing 37.
Nitrogen as inert gas is always in the internal flow of casing 437.Casing 437 is provided with to casing 437 and sucks The inhalation port 437a of the nitrogen and discharge port 437b that nitrogen is discharged from casing 437 to outside.Inhalation port 37a and row Exit port 37b can connect air intake duct and discharge pipe (not shown).Inhalation port 437a is connected with nitrogen supply source 443.
Moreover, laser irradiation device 3 has attenuator 452, shield 453 and purification gas supply source 454.In casing In 437, the configuration of attenuator 452 is in the optical path between high reflection mirror 436a and high reflection mirror 436b.Attenuator 452 includes for example The turntable 452c and 452d of two partial reflector 452a and 452b and these partial reflectors.Two partial reflectors 452a and 452b is the incident angle according to pulse laser, the changed optical element of transmitance.Partial reflector 452a And the tilt angle of partial reflector 452b is adjusted by turntable 452c and turntable 452d, so as to pulse laser Incident angle it is consistent with each other, and realize desired transmitance.
Pulse laser is reduced to after desired pulse energy through attenuator 452 as a result,.The transmitance base of attenuator 452 It is controlled in the control signal inputted from laser irradiation control unit 3a.By controlling the transmitance of attenuator 452, can adjust It is irradiated to the flux of the pulse laser on 441 surface of machining object.
Shield 453 surrounds the machined object 441 of the state supported by workbench 433.Shield 453, which has, surrounds work The whole size of platform 433 and XYZ stage 434, and it is fixed on frame 438.
In the opening that the window 442 that the upper surface of shield 453 was formed with and was arranged in casing 437 connects.Window 442 Incidence has the plane of incidence of the pulse laser from collector lens 436d to configure the surface of emission of emission pulse laser in casing 437 Configuration is in shield 453.The illumination path shielded body of pulse laser between window 442 and machined object 441 as a result, 453 surround.
Purification gas supply source 454 is the gas supply source that purification gas is supplied to shield 453.Make as purification gas With the air (CDA) that such as nitrogen or cleaning are dry.CDA is for example to be gone by mechanical filter and molecular sieve from the gas in atmosphere Except the gas of the impurity such as particle and moisture.When CDA is used as purification gas, it is preferable that will include in laser aid 2a Solid state laser device 10a be set as oscillation wavelength and oxygen Absorption Line it is inconsistent after make its oscillation.
Oxygen flows in the inner space of shield 453 always.Shield 453 be provided with from oxygen supply source 454 to The inhalation port 453a of oxygen intake and from shield 453 to the discharge port 453b of external discharge oxygen in shield 453.
6.2 effect
The laser aids such as the laser aid 2a of output burst light are connected in laser irradiation device 3 formed as described above When, to compare when Sing plus light, the peak strength of pulse can be reduced, obtains the effect for extending the service life of optical element Fruit.Also, the pulse width for supplying the burst light of laser irradiation device 3 is shorter, it is possible to it is clean to obtain machining shape Effect.
Also, the laser such as the laser aid 2c of wavelength that can change each pulse dress is connected in laser irradiation device 3 When setting, by controlling the wavelength of each pulse, deep processing can be carried out.For example, being dashed forward by lengthening to be included according to incident sequence The wavelength of each pulse in pulsed light is sent out, to successively extend the focal length of collector lens 436d, it is possible to realize deep add Work.
7, the specific example of semiconductor laser and semiconductor optical amplifier
7.1 constituting
Figure 39 shows the specific composition example of semiconductor laser 11 and semiconductor optical amplifier 12.Semiconductor laser 11 include semiconductor laser control unit 500, the first semiconductor element 501, Peltier's element 502, temperature sensor 503, first Current control unit 504 and temperature control part 505.Semiconductor laser 11 is the distributed feedback laser vibrated with single-vertical mode Device exports CW laser.First semiconductor element 501 includes active layer 501a and grating 501b.
Semiconductor optical amplifier 12 includes the second semiconductor element 510 and the second current control unit 511.Second semiconductor Element 510 includes active layer 510a.
7.2 movement
Semiconductor laser control unit 500 is controlled when having wavelength data λ 1 from the input of solid-state laser control unit 15 to temperature Portion 505 inputs temperature T λ corresponding with wavelength data λ 1.The amber that the monitoring of temperature control part 505 is detected by temperature sensor 503 The temperature of ear note element 502, and the electric current for flowing through Peltier's element 502 is controlled, so that the temperature of Peltier's element 502 reaches Temperature T λ.First current control unit 504 makes electric current the first half based on the current setting value inputted from solid-state laser control unit 15 It is flowed through in conductor element 501.Fixed electric current is flowed through in the active layer 501a of first semiconductor element 501, output wavelength λ's 1 CW laser.
From the CW laser light incident that semiconductor laser 11 exports to the active layer 510a of the second semiconductor element 510.As The burst signals BPS of current controling signal is incident on the second semiconductor element 510.It is synchronous with burst signals BPS, Export the seed pulse light for the burst shape being amplified.
7.3 effect
According to above composition, semiconductor laser 11 can be changed by the temperature of the first semiconductor element 501 of control Oscillation wavelength.
It should be noted that in the respective embodiments described above, the semiconductor optical amplifier setting for carrying out pulse amplifying is existed The outlet side of semiconductor laser, however, it is also possible to be come using the optical shutter of combination polarizing film and EO pockels cell with this Instead of semiconductor optical amplifier.
Also, in Figure 39, it can also be not provided with semiconductor optical amplifier 12 and burst generator 16, as generation It replaces, the current signal of burst shape is inputted from semiconductor laser control unit 500 to the first current control unit 504, to generate The seed pulse light of burst shape.Moreover, can also be generated in configuration semiconductor optical amplifier 12 and burst in Figure 39 In the state of device 16, the electric current letter of burst shape is inputted from semiconductor laser control unit 500 to the first current control unit 504 Number, to generate the seed pulse light of burst shape.In this case, make semiconductor laser 11 and semiconductor optical amplifier 12 Movement it is synchronous.
8, the variation of discharge sensor
Secondly, illustrating the variation of discharge sensor.In the respective embodiments described above, it is being contained in quasi-molecule amplifier 20 Laser cavity 21 in be provided with electric discharge observation window 21c, received from the second optical sensor 71 via electric discharge observation with window 21c Discharging light, to detect electric discharge.In this variation, it is not provided with electric discharge observation window 21c, is received by the second optical sensor 71 Through the discharging light of concave mirror 25b, to detect electric discharge.
8.1 constitute and act
Figure 40 shows a part of quasi-molecule amplifier according to this modification.In this variation, quasi-molecule amplifies Device further includes the first high reflection mirror 600, the second high reflection mirror 601 and transfer lens 602.In this variation, concave mirror 25b It is the component of the coated film 611 on the substrate 610 of visible light-transmissive, film 611 makes visible light-transmissive and high reflection 193.4nm Light.
First high reflection mirror 600 is the component of the coated film 600b on the substrate 600a of visible light-transmissive, and film 600b makes can The light of light-exposed transmission and high reflection 193.4nm.In the same manner, the second high reflection mirror 601 is on the substrate 601a of visible light-transmissive The component of coated film 601b, film 601b make the light of visible light-transmissive and high reflection 193.4nm.First high reflection mirror 600 and second The seed pulse light BSP that is configured to will to happen suddenly of high reflection mirror 601 is incident in discharge space.
Transfer lens 602 are configured to enter from discharge space via window 21a and concave mirror 25b and the second high reflection mirror 601 Discharging light is penetrated.Above-mentioned the second optical sensor 71 configuration is in the position by transfer lens 602 transferred with the image of discharging light. When generating electric discharge in discharge space, the second optical sensor 71 receives discharging light, to detect electric discharge opportunity.
8.2 effect
According to this modification, it is not necessary that electric discharge observation window 21c is arranged in laser cavity 21.
It should be noted that detection is put from discharge space to what the incident side of laser cavity 21 exported in above-mentioned variation Electric light, however, it is also possible to detect the discharging light exported from discharge space to the emitting side of laser cavity 21.In this case, exist The position opposite with window 21b configures and the first high reflection mirror and the second high reflection mirror 600,601 identical high reflection mirrors, warp Discharging light is detected by optical sensor by the high reflection mirror.
9, other variations
In the respective embodiments described above, in the processing of optimization aim delay time Dt, change target delay time on one side The measured value D of Dt, delay time when on one side becoming maximum the measured value E of burst energy are set as optimum delay time Dopt.When can accurately control target delay time Dt, can also on one side little by little change target delay time Dt with Increase the measured value E of burst energy, controls synchronous opportunity on one side.
The respective embodiments described above and specific example can be combined in the case where not generating contradictory situation.Also, it is above-mentioned Explanation be only exemplary explanation, be not intended to limit the present invention.Therefore, it will be appreciated by those skilled in the art that not departing from In the case where the range of appended claims, change can be added to each embodiment of the disclosure.
Term used in this specification and appended claims entirety should be construed to the term of " not limiting ". For example, the terms such as " comprising " or "comprising" should be construed to " be not limited to as comprising means record means ".Term " having " should be construed to " being not limited to the means recorded as the means having ".Also, this specification and subsidiary power The modifier recorded in the range of sharp claim "one" should be construed to "at least one" or " one or more ".
Claims (according to the 19th article of modification of treaty)
1. a kind of laser aid, has:
A, solid state laser device, output include the burst seed pulse light of multiple pulses；
B, quasi-molecule amplifier amplifies the burst seed pulse light using primary electric discharge, makees in discharge space It is exported for amplification burst light；
C, energy sensor measures the energy of the amplification burst light；And
D, card for laser control unit, based on from the solid state laser device export it is described burst seed pulse light opportunity with described The relationship between the difference on the opportunity of electric discharge and the measured value of the energy is generated in discharge space, correction fills the solid-state laser Set the opportunity for exporting the burst seed pulse light.
2. laser aid according to claim 1, wherein
The quasi-molecule amplifier includes a pair of discharge electrodes, pulse power module and charger,
The card for laser control unit carries out energy back control, and the charging electricity of the charger is corrected under energy back control Pressure, so that the measured value of the energy is close to target value.
3. laser aid according to claim 2, wherein
The card for laser control unit is correcting the laggard of the opportunity for making the solid state laser device export the burst seed pulse light The row energy back control.
4. laser aid according to claim 1, which is also equipped with:
E, light intensity sensor, measurement include the light intensity waveform of each pulse in the amplification burst light；And
F, pulse form analysis portion, based on the light intensity waveform of each pulse, measurement indicates the feature of each pulse extremely A few parameter.
5. laser aid according to claim 4, wherein
The card for laser control unit carries out parameter feedback control, under parameter feedback control, controls the solid state laser device, makes The parameter measured value close to target value.
6. laser aid according to claim 5, wherein
The parameter includes peak strength, pulse spacing and pulse width.
7. laser aid according to claim 6, wherein
The card for laser control unit is correcting the laggard of the opportunity for making the solid state laser device export the burst seed pulse light The row parameter feedback control.
8. laser aid according to claim 1, wherein
The solid state laser device can change include it is described burst seed pulse light in each pulse wavelength.
9. laser aid according to claim 8, which is also equipped with:
G, Wavelength monitor, measurement include the wavelength of each pulse in the amplification burst light,
Wherein, the card for laser control unit carries out wavelength feedback control, under wavelength feedback control, controls the solid-state laser dress It sets, so that the measured value of the wavelength is close to target value.
10. laser aid according to claim 9, wherein
The card for laser control unit is correcting the laggard of the opportunity for making the solid state laser device export the burst seed pulse light The row wavelength feedback control.
11. laser aid according to claim 1, wherein
The solid state laser device includes semiconductor laser, puts to the output light progress pulse from the semiconductor laser The burst generator of the electric current of big semiconductor optical amplifier and the control semiconductor optical amplifier.
12. laser aid according to claim 8, wherein
The solid state laser device includes multiple semiconductor lasers, multiple semiconductor optical amplifiers, bundling device and control institute State the burst generator of the electric current of multiple semiconductor optical amplifiers.
13. laser aid according to claim 1, which is also equipped with:
H, the first optical sensor detects the burst seed pulse light exported from the solid state laser device；
I, the second optical sensor detects the discharging light generated in the discharge space；And
J, timer receives the first detection signal that exports from first optical sensor and defeated from second optical sensor The second detection signal out, measurement are played until receiving the second detection signal from the first detection signal is received Delay time.
14. laser aid according to claim 13, wherein
Relationship between the measured value of measured value and the energy of the card for laser control unit based on the delay time, correction make The solid state laser device exports the opportunity of the burst seed pulse light.
15. laser aid according to claim 14, wherein
The measured value of the delay time when card for laser control unit reaches maximum based on the measured value of the energy, correction make The solid state laser device exports the opportunity of the burst seed pulse light.
16. a kind of laser-processing system, has:
K, laser aid described in claim 1；And
L, the amplification burst illumination inputted from the laser aid is mapped to machined object by laser irradiation device.
(17. increase) laser aid according to claim 1, wherein
The card for laser control unit makes described in the solid state laser device output according to from an externally input light emission trigger signal Happen suddenly seed pulse light.

Claims (16)

1. a kind of laser aid, has:
A, solid state laser device, output include the burst seed pulse light of multiple pulses；
B, quasi-molecule amplifier amplifies the burst seed pulse light using primary electric discharge, makees in discharge space It is exported for amplification burst light；
C, energy sensor measures the energy of the amplification burst light；And
D, card for laser control unit, based on from the solid state laser device export it is described burst seed pulse light opportunity with described The relationship between the difference on the opportunity of electric discharge and the measured value of the energy is generated in discharge space, correction fills the solid-state laser Set the opportunity for exporting the burst seed pulse light.
2. laser aid according to claim 1, wherein
The quasi-molecule amplifier includes a pair of discharge electrodes, pulse power module and charger,
The card for laser control unit carries out energy back control, and the charging electricity of the charger is corrected under energy back control Pressure, so that the measured value of the energy is close to target value.
3. laser aid according to claim 2, wherein
The card for laser control unit is correcting the laggard of the opportunity for making the solid state laser device export the burst seed pulse light The row energy back control.
4. laser aid according to claim 1, which is also equipped with:
E, light intensity sensor, measurement include the light intensity waveform of each pulse in the amplification burst light；And
F, pulse form analysis portion, based on the light intensity waveform of each pulse, measurement indicates the feature of each pulse extremely A few parameter.
5. laser aid according to claim 4, wherein
The card for laser control unit carries out parameter feedback control, under parameter feedback control, controls the solid state laser device, makes The parameter measured value close to target value.
6. laser aid according to claim 5, wherein
The parameter includes peak strength, pulse spacing and pulse width.
7. laser aid according to claim 6, wherein
The card for laser control unit is correcting the laggard of the opportunity for making the solid state laser device export the burst seed pulse light The row parameter feedback control.
8. laser aid according to claim 1, wherein
The solid state laser device can change include it is described burst seed pulse light in each pulse wavelength.
9. laser aid according to claim 8, which is also equipped with:
G, Wavelength monitor, measurement include the wavelength of each pulse in the amplification burst light,
Wherein, the card for laser control unit carries out wavelength feedback control, under wavelength feedback control, controls the solid-state laser dress It sets, so that the measured value of the wavelength is close to target value.
10. laser aid according to claim 9, wherein
The card for laser control unit is correcting the laggard of the opportunity for making the solid state laser device export the burst seed pulse light The row wavelength feedback control.
11. laser aid according to claim 1, wherein
The solid state laser device includes semiconductor laser, puts to the output light progress pulse from the semiconductor laser The burst generator of the electric current of big semiconductor optical amplifier and the control semiconductor optical amplifier.
12. laser aid according to claim 8, wherein
The solid state laser device includes multiple semiconductor lasers, multiple semiconductor optical amplifiers, bundling device and control institute State the burst generator of the electric current of multiple semiconductor optical amplifiers.
13. laser aid according to claim 1, which is also equipped with:
H, the first optical sensor detects the burst seed pulse light exported from the solid state laser device；
I, the second optical sensor detects the discharging light generated in the discharge space；And
J, timer receives the first detection signal that exports from first optical sensor and defeated from second optical sensor The second detection signal out, measurement are played until receiving the second detection signal from the first detection signal is received Delay time.
14. laser aid according to claim 13, wherein
Relationship between the measured value of measured value and the energy of the card for laser control unit based on the delay time, correction make The solid state laser device exports the opportunity of the burst seed pulse light.
15. laser aid according to claim 14, wherein
The measured value of the delay time when card for laser control unit reaches maximum based on the measured value of the energy, correction make The solid state laser device exports the opportunity of the burst seed pulse light.
16. a kind of laser-processing system, has:
K, laser aid described in claim 1；And
L, the amplification burst illumination inputted from the laser aid is mapped to machined object by laser irradiation device.
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