CN109891375A - The manufacturing method of touch panel, touch panel - Google Patents

The manufacturing method of touch panel, touch panel Download PDF

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Publication number
CN109891375A
CN109891375A CN201780066616.0A CN201780066616A CN109891375A CN 109891375 A CN109891375 A CN 109891375A CN 201780066616 A CN201780066616 A CN 201780066616A CN 109891375 A CN109891375 A CN 109891375A
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China
Prior art keywords
layer
touch panel
wiring layer
general formula
wiring
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Granted
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CN201780066616.0A
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CN109891375B (en
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三井博子
诹访充史
山铺有香
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Toray Industries Inc
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Toray Industries Inc
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L81/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
    • C08L81/06Polysulfones; Polyethersulfones
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/10Block- or graft-copolymers containing polysiloxane sequences
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/301Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen or carbon in the main chain of the macromolecule, not provided for in group H01B3/302
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/306Polyimides or polyesterimides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/307Other macromolecular compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Abstract

Touch panel, it is the touch panel comprising being sequentially laminated with the position of hyaline layer (OC-D), the first wiring layer (A-1), the first insulating layer (OC-1) and the second wiring layer (A-2), and above-mentioned hyaline layer (OC-D) contains the heat-resistant polymer of the structure of the structure and the following general formula (2) expression that indicate with following chemical formula (1).The present invention provides following touch panels, is applicable to the excellent processing method of dimensional accuracy, can inhibit the residue of conductive composition, and tone, humidity resistance are excellent, is capable of forming fine pattern and reply flexibility.In above-mentioned general formula (1) and (2), R1And R2Each independently represent monovalent organic group.M and n each independently represents 0~4 integer.M R1And n R2Respectively it can be the same or different.

Description

The manufacturing method of touch panel, touch panel
Technical field
The present invention relates to the manufacturing methods of touch panel, touch panel.
Background technique
In recent years, for the touch panel of mobile phone, tablet computer etc., from design, the sight of convenience, durability Point considers, it is expected that flexibility.However, status is that there are various projects in the flexibility of touch panel, practical journey has not yet been reached Degree.Its major subjects is touch panel technologies, the deficiency for especially touching wiring technique.In the past, as the formation for touching wiring Method, from improve visibility from the viewpoint of, be widely used for following methods: on the substrates such as glass, film formed include The film of the transparent conductive metals such as ITO, and pattern processing is carried out using etching.However, ITO wiring is rigid and crisp therefore resistance to Bendability is low, and there are the projects cracked when bending.Therefore, as the touch wiring of substitution ITO, metal grill cloth is proposed The various technologies of line, metal nanometer line, carbon nanotube etc.Wherein, as having both resistance to bend(ing) and visibility, highly conductive Property touch wiring, metal grill wiring technique attracted attention.
Metal grill wiring is obtained and the metal line for carefully arriving unrecognized degree is formed as lattice 's.For example, the metal small by using resistance values such as gold, silver, copper, can obtain wiring with good conductivity.In addition, by suitable Amount contains the organic principle through sufficiently designing, and can be improved resistance to bend(ing), also can sufficiently cope with flexibility.
As the method for forming such metal grill wiring, for example, the following methods can be given: using conductive gold is included The conductive paste for belonging to particle and organic principle forms wiring pattern using the methods of silk-screen printing, ink-jet, photoetching (for example, ginseng See patent document 1).However, in order to form the fine pattern that can not identify degree, it is necessary to by the partial size micronized of electroconductive particle To nano-scale.There is the project for being easy fusion in low temperature such as room temperatures and being aggregated in such electroconductive particle.In addition, leading The surface of conductive particles is reacted with organic principle, and there are the projects that storage stability reduces.In addition, using light sensitive paste method into In the case that row pattern is processed, electroconductive particle has light reflective and scatters the light of exposure, and therefore, it is difficult to be formed Fine pattern.
In view of this, the method for solving the above subject is disclosed using the electroconductive particle with coating (for example, ginseng See patent document 2).The surface-active of electroconductive particle is reduced by coating, is able to suppress between electroconductive particle Reaction and/or electroconductive particle and organic principle react.In addition, even if using light sensitive paste method, It is able to suppress the scattering of the light of exposure, pattern processing accurately can be carried out to wiring.On the other hand, by 200 DEG C The high temperature of left and right is heated, and can easily be removed coating, be showed sufficient electric conductivity.It, being capable of shape by the technology It is routed at metal grill.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2000-199954 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2013-196997 bulletin
Summary of the invention
Subject to be solved by the invention
However, in order to remove the coating of electroconductive particle, needing 200 DEG C of left sides for the technology disclosed in the patent document 2 Right high temperature, therefore high-fire resistance is required to substrate applicatory, there is the class that substantially can be only formed on the glass substrate Topic.Certainly, it is difficult using glass substrate to cope with flexibility.In addition, even if making using the very excellent film of heat resistance In the case where for substrate, there is also following projects: since solidification is repeated in high temperature, thus because of the film caused by heat deterioration Color and make tone reduce or dimensional accuracy reduce and positional shift occurs, generate be referred to as moir patterns bad order.This Outside, by using the photoresist process of conductive composition when carrying out pattern processing to metal line on the film of excellent heat resistance, Due to the strong interaction of conductive composition and film surface, so that the conductive composition in unexposed portion is unable to fully when developing It removes, is easy to produce residue.On the other hand, if in order to reduce residue and forcing condition, there are patterns to be easily peeled off, difficult To form the project of fine pattern.In addition, be easy to migrate under hygrothermal environment because of the residue of conductive composition, Therefore the project insufficient there are humidity resistance.
The present invention is the project in view of the above-mentioned prior art and makes, its purpose is to provide following touch panels, It is applicable to the excellent processing method of dimensional accuracy, the residue of conductive composition is few, and tone and humidity resistance are excellent, and can Form fine pattern and reply flexibility.
Means for solving the problems
The present invention is touch panel, for comprising being sequentially laminated with hyaline layer (OC-D), the first wiring layer (A-1), first The touch panel at the position of insulating layer (OC-1) and the second wiring layer (A-2), above-mentioned hyaline layer (OC-D) are contained comprising following logical The heat-resistant polymer for the structure that the structure and the following general formula (2) that formula (1) indicates indicate.
[chemical formula 1]
In above-mentioned general formula (1)~(2), R1And R2Monovalent organic group is each independently represented, m and n are each independently represented 0~4 integer.M R1And n R2Respectively it can be the same or different.
In addition, another way of the invention is the manufacturing method of touch panel described in any one of claim 1~17, It includes following processes:
Hyaline layer (OC-D), the first wiring layer (A-1), the first insulating layer (OC- are at least sequentially formed on temporary support body And the second wiring layer (A-2) and the process that makes transfer member 1);
Via transparent adhesive layer, by above-mentioned transfer member and temporary support body in opposite side face paste together in substrate work Sequence;And
The process for removing temporary support body,
Wherein, above-mentioned hyaline layer (OC-D) has the function of removing, and containing the structure indicated comprising above-mentioned general formula (1) and on State the polymer of the structure of general formula (2) expression.
In addition, another way of the invention is structural body, it is to have to be laminated with the first wiring on hyaline layer (OC-D) The structural body at the position of layer (A-1), above-mentioned hyaline layer (OC-D) contain the structure indicated with above-mentioned general formula (1) and above-mentioned general formula (2) heat-resistant polymer of the structure indicated.
The effect of invention
Touch panel of the invention is applicable to the excellent processing method of dimensional accuracy, and the residue of conductive composition is few, Tone and humidity resistance are excellent.In accordance with the invention it is possible to provide the touch panel that can be formed fine pattern and cope with flexibility.
Specific embodiment
Touch panel of the invention is characterized in that having and be sequentially laminated with hyaline layer (OC-D), the first wiring layer (A- 1), the position of the first insulating layer (OC-1) and the second wiring layer (A-2), above-mentioned hyaline layer (OC-D), which is contained, includes above-mentioned general formula (1) heat-resistant polymer for the structure that the structure and above-mentioned general formula (2) indicated indicates.Above layers are illustrated.
(hyaline layer (OC-D))
Hyaline layer used in the present invention (OC-D) contains the structure and the following general formula (2) indicated comprising the following general formula (1) The heat-resistant polymer of the structure of expression.Present inventor has made intensive studies, as a result, it has been found that, by using in a molecule In the heat-resistant polymer of both structures that indicates of the structure that indicates comprising the following general formula (1) and the following general formula (2), thus with removing Polymer phase ratio other than this, can be improved amorphism and inhibits to colour, and significantly improve the transparency.Further, since comprising above-mentioned The heat resistance of the polymer of structure is high, therefore is able to suppress xanthochromia when heating in subsequent handling.Therefore, by by the polymer Applied to hyaline layer (OC-D), have the effect of improving tone.In addition, by making hyaline layer (OC-D) to include the polymer, from And residue can be inhibited in the processing of the conductive layer (A-1) of subsequent handling, therefore be capable of forming fine pattern, also, have The effect that the humidity resistance of the touch panel made improves.
[chemical formula 2]
In above-mentioned general formula (1)~(2), R1And R2Monovalent organic group is each independently represented, m and n are each independently represented 0~4 integer.M R1And n R2Respectively it can be the same or different.
From the viewpoint of further increasing tone, R1And R2Preferably the alkyl, carboxyl, phenyl of carbon atom number 1~10 or Substituted-phenyl or trifluoromethyl.In addition, m and n are preferably 0 or 1, more preferably from the viewpoint of further increasing tone 0.As the substituent group of substituted-phenyl, preferably fluorine, trifluoromethyl, the alkyl of carbon atom number 1~10, allyl, carbon atom number 3~ 10 aryl.
Above-mentioned heat-resistant polymer preferably also contains fluorine, can further increase the transparency.As the structure containing fluorine, preferably The structure that following structural formula (3) or the following general formula (12) indicate.By the inclusion of the structure that following structural formula (3) indicate, Neng Gouti High transparency can be improved the elongation at break of hyaline layer by the inclusion of the structure that the following general formula (12) indicate.
[chemical formula 3]
In above-mentioned general formula (12), R7And R8Each independently represent fluorine atom or the group containing fluorine atom.As containing fluorine The group of atom, for example, trifluoromethyl can be enumerated.R7And R8Preferably fluorine atom or trifluoromethyl.X and y are each independently represented 1~4 integer.X R8And y R7Respectively it can be the same or different.
As the structure that above-mentioned general formula (12) indicate, such as any one expression in following structural formula (14)~(17) can be enumerated Structure etc..
[chemical formula 4]
In the case where above-mentioned heat-resistant polymer includes the structure that above-mentioned general formula (12) indicate, stretched from fracture is further increased From the viewpoint of long rate, the content of the repetitive unit with the structure is preferably 3 moles of % or more in whole repetitive units, more Preferably 5 moles of % or more, further preferably 8 moles of % or more.On the other hand, it is examined from the viewpoint for further increasing tone Consider, content is preferably 50 moles of % hereinafter, more preferably 45 moles of % are hereinafter, further preferably 40 moles of % or less.
The structure that above-mentioned heat-resistant polymer is preferably also indicated comprising following structural formula (13).By the inclusion of following structural formula (13) structure indicated, can be improved the obdurability of hyaline layer, greatly improves the yield of subsequent handling and the resist bending of touch panel Property.
[chemical formula 5]
In the case where above-mentioned heat-resistant polymer includes the structure that above-mentioned general formula (13) indicate, stretched from fracture is further increased From the viewpoint of long rate, preferably 0.01 in the whole repetitive units of the content of the repetitive unit with the structure in the polymer Mole % or more, more preferably 0.1 mole of % or more, further preferably 0.3 mole of % or more.On the other hand, from further From the viewpoint of improving tone, content is preferably 10 moles of % hereinafter, more preferably 3 moles of % are hereinafter, further preferably 2 rub You are % or less.
As above-mentioned heat-resistant polymer, it is preferably selected from by polyimides, Polyimidesiloxane, polyether sulfone, polyphenyl simultaneously At least one of the group of oxazole, aromatic polyamides, epoxy resin and sulfonamide composition polymer.Two in them can be combined Kind or more.By using them as heat-resistant polymer, heat resistance can be further increased, is further suppressed in subsequent handling Coloring, can further increase tone.From the viewpoint of further increasing heat resistance, more preferably selected from by polyimides, At least one of the group of Polyimidesiloxane, polyether sulfone and polybenzoxazoles composition polymer.In addition, from solvent resistant is improved From the viewpoint of property, further preferably in the group being made of polyimides, Polyimidesiloxane and polybenzoxazoles At least one polymer.
The structural unit that preferably there are polyimides the following general formula (4) to indicate.
[chemical formula 6]
In above-mentioned general formula (4), R3Indicate 4~10 valence organic groups, R4Indicate 2~8 valence organic groups, R5And R6Indicate one Valence organic group can be respectively single group, can also be mixed different groups.R3And/or R4At least part In comprising above-mentioned general formula (1) indicate structure and above-mentioned general formula (2) indicate structure.It is preferred that R3And/or R4At least part in Also comprising the structure in the structure that the structure and structure above (13) that above-mentioned general formula (12) indicate indicate.P and q are respectively only On the spot indicate 0~6 integer.
From the viewpoint of the heat resistance for further increasing polyimides, in general formula (4), preferably R3And R450 moles of % The above are aromatic hydrocarbyls or derivatives thereof.More preferable R3And R480 moles of % the above are aromatic hydrocarbyl or derivatives thereof, into The preferred R of one step3And R4All aromatic hydrocarbyls or derivatives thereof.
The structural unit that polyimides indicates preferably in a Molecularly Imprinted Polymer with 5~100000 above-mentioned general formulas (4). The structural unit indicated by the above-mentioned general formula (4) with 5 or more, can be improved the obdurability of hyaline layer.On the other hand, lead to The structural unit indicated with 100000 above-mentioned general formulas (4) below is crossed, is able to maintain that coating.
In above-mentioned general formula (4), R3-(R5)pIndicate the residue of acid dianhydride.R3For 4 valences~10 valence organic groups, wherein preferably The organic group of carbon atom number 5~40 comprising aromatic ring or cyclic aliphatic group.R5Preferably enumerate phenolic hydroxyl, sulphur Acidic group or mercapto can be single group, can also be mixed different groups.
As acid dianhydride, for example, pyromellitic acid anhydride, 3 can be enumerated, 3 ', 4,4 '-bibenzene tetracarboxylic dianhydrides, 2,3,3 ', 4 '-bibenzene tetracarboxylic dianhydrides, 2,2 ', 3,3 '-bibenzene tetracarboxylic dianhydrides, 3,3 ', 4,4 '-benzophenone tetracarboxylic dianhydrides, 2,2 ', Bis- (3,4- dicarboxyphenyi) propane dianhydrides of 3,3 '-benzophenone tetracarboxylic dianhydrides, 2,2-, bis- (the 2,3- dicarboxyphenyis) third of 2,2- Bis- (3,4- dicarboxyphenyi) the second dianhydrides of dianhydride, 1,1-, bis- (2,3- dicarboxyphenyi) the second dianhydrides of 1,1-, bis- (3,4- dicarboxyls Phenyl) first dianhydride, bis- (2,3- dicarboxyphenyi) first dianhydrides, bis- (3,4- dicarboxyphenyi) sulfone dianhydrides, bis- (3,4- dicarboxyl benzene Base) ether dianhydride, 1,2,5,6- naphthalenetetracarbacidic acidic dianhydride, bis- (3,4- dicarboxyphenyi) the fluorenic acid dianhydrides of 9,9-, the bis- { 4- (3,4- of 9,9- Di carboxyl phenyloxy) phenyl } fluorenic acid dianhydride, 2,3,6,7- naphthalenetetracarbacidic acidic dianhydride, 2,3,5,6- pyridine tetracarboxylic acid dianhydride, 3,4,9, 10- tetracarboxylic acid dianhydride, 2,2- bis- (3,4- dicarboxyphenyi) hexafluoropropane dianhydrides, 3,3 ', 4,4 '-diphenyl sulfone tetracarboxylic acids two The aliphatic tetrabasic carboxylic acids such as the aromatic tetracarboxylic dianhydrides such as acid anhydride, ethylene-dimalonic acid dianhydride, 1,2,3,4- cyclopentane tetracarboxylic acid dianhydride Dianhydride etc..It can be used two or more in them.
As the acid dianhydride of the structure indicated comprising above-mentioned general formula (1), for example, bis- (3,4- dicarboxyphenyi) sulfones can be enumerated Dianhydride, 4,4 '-[(phenylene sulfenyls) bis- to sulfonyl] diphthalic anhydrides (DPSDA) and their isomers etc..As Acid dianhydride with the structure that above-mentioned general formula (2) indicate, for example, 3,3 ', 4,4 '-diphenyl ether tetracarboxylic acid dianhydrides can be enumerated (ODPA) and its isomers etc..
As the acid dianhydride containing fluorine atom, for example, 5,5 '-[2,2,2- tri- fluoro- 1- [3- (trifluoromethyl) benzene can be enumerated Base] ethidine] diphthalic anhydrides, 5,5 '-[five fluoro- 1- (trifluoromethyl) propylidene base of 2,2,3,3,3-] two phthalic acids Acid anhydride, 1H- difluoro [3,4-b:3 ', 4 '-i] xanthene -1,3,7,9 (11H)-tetrone, bis- [the equal benzene of 4,6,7- trifluoro of 5,5 '-oxygroups Tetracarboxylic acid anhydride], bis- (trifluoromethyl) pyromellitic acid anhydrides of 3,6-, 4- (trifluoromethyl) pyromellitic acid anhydride, 1,4- difluoro Bis- (3,4- dicarboxyl trifluoro-benzene oxygroup) tetrafluoro benzene dianhydrides of pyromellitic acid anhydride, 1,4- etc..
In acid dianhydride containing fluorine atom, as the acid dianhydride of the structure indicated comprising general formula (3), for example, 2 can be enumerated, Bis- (3,4- dicarboxyphenyi) hexafluoropropane dianhydrides (6FDA) of 2-, 4,4 '-(hexafluoroisopropylidenyl) diphthalic anhydrides, 3, 3 '-(hexafluoroisopropylidenyl) diphthalic anhydrides etc..
In acid dianhydride containing fluorine atom, as the acid dianhydride of the structure indicated comprising general formula (12), for example, 4 can be enumerated, 7 '-bis- (trifluoromethyls)-(5,5 '-two isobenzofuran) -1,1 ', 3,3 '-tetrones, 4,7 '-two fluoro- (5,5 '-two different benzo furans Mutter) -1,1 ', 3,3 '-tetrones etc..
In above-mentioned general formula (4), R4-(R6)qIndicate the residue of diamines.R5For 2~8 valence organic groups, wherein preferably comprise The organic group of the carbon atom number 5~40 of aromatic ring or cyclic aliphatic group.R6Preferably enumerate phenolic hydroxyl, sulfonic group Or mercapto, it can be single group, different groups can also be mixed.
As diamines, for example, 3,4 '-diamino-diphenyl ethers, 4,4 '-diamino-diphenyl ethers, 3,4 '-diaminos can be enumerated Base diphenyl methane, 4,4 '-diaminodiphenyl-methanes, 3,4 '-diamino diphenyl sulfones, 4,4 '-diamino diphenyl sulfones, 3, Bis- (4- amino-benzene oxygen) benzene of 4 '-diamino diphenyl sulfides, 4,4 '-diamino diphenyl sulfides, 1,4-, benzidine, isophthalic Diamines, p-phenylenediamine, 1,5- naphthylenediamine, 2,6- naphthylenediamine, bis- (4- aminophenoxy phenyl) sulfones, bis- (3- amino-benzene oxygen benzene Base) sulfone, bis- (4- amino-benzene oxygen) biphenyl, bis- { 4- (4- amino-benzene oxygen) phenyl } ethers, bis- (4- amino-benzene oxygen) benzene of 1,4-, 2,2 '-dimethyl -4,4 '-benzidine, 2,2 '-diethyl -4,4 '-benzidine, 3,3 '-dimethyl -4,4 '-diamino Base biphenyl, 3,3 '-diethyl -4,4 '-benzidine, 2,2 ', 3,3 '-tetramethyls -4,4 '-benzidine, 3,3 ', 4, 4 '-tetramethyls -4,4 '-benzidine, 2,2 '-two (trifluoromethyl) -4,4 '-benzidines, bis- (the 4- aminobenzenes of 9,9- Base) fluorenes, (4- amino-benzene oxygen) benzene of 1,3,5- tri- or their aromatic ring hydrogen atom at least part by alkyl, halogen Compound, aliphatic cyclohexanediamine, methylenebiscyclohexylamine obtained from plain atom replaces etc..Two in them can be used Kind or more.
These diamines can be used in the form of corresponding diisocyanate cpd or trimethylsilylation diamines.
As the diamines of the structure indicated comprising above-mentioned general formula (1), for example, 4,4 '-diamino diphenyl sulfones, 3 can be enumerated, 3 '-diamino diphenyl sulfones, 3,4 '-diamino diphenyl sulfones, bis- [4- (4- amino-benzene oxygen) phenyl] sulfones, bis- [4- (3- amino Phenoxy group) phenyl] sulfone and their isomers etc..As the diamines of the structure indicated comprising above-mentioned general formula (2), for example, can lift 3,4 '-diamino-diphenyl ethers, 4,4 '-diamino-diphenyl ethers and their isomers etc. out.
As the diamines comprising fluorine atom, for example, 2 can be enumerated, 2 '-bis- (trifluoromethyl) -4,4 '-benzidines, 2, The fluoro- 1,4- diaminobenzene of 3,5,6- tetra-, the fluoro- 1,3- diaminobenzene of 2,4,5,6- tetra-, the fluoro- 1,4- benzene (diformazan of 2,3,5,6- tetra- Amine), 2,2 '-two fluoro- (1,1 '-xenyl) -4,4 '-diamines, 2,2 ', 6,6 '-four fluoro- (1,1 '-xenyl) -4,4 '-diamines, Bis- (4- aminophenyl) hexafluoropropane of 4,4 '-diamino octafluorobiphenyls, 2,2-, 4,4 '-oxygroups bis- (2,3,5,6- tetrafluoroanilines), 3,3 '-bis- (trifluoromethyl) -4,4 '-benzidines, 4,4 '-diamino -2,2 '-bis- (trifluoromethyl) diphenyl ether, 1,4- Bis- [4- amino -2- (trifluoromethyl) phenoxy group] benzene, 2,2- it is bis- [4- [4- amino -2- (trifluoromethyl) phenoxy group] hexafluoropropane, 3,5- diamido-benzotrifluoride, 4,4- diamino -2- (trifluoromethyl) diphenyl ether and their isomers etc..Among these, As the diamines of the structure indicated comprising general formula (3), bis- (4- aminophenyl) hexafluoropropane of 2,2- etc. can be enumerated, as comprising logical The diamines for the structure that formula (12) indicates, can enumerate 2,2 '-bis- (trifluoromethyl) -4,4 '-benzidines, 2,2 '-two fluoro- (1, 1 '-xenyl) -4,4 '-diamines, 2,2 ', 6,6 '-four fluoro- (1,1 '-xenyl) -4,4 '-diamines, 4,4 '-diamino octafluoros connection Benzene, 4,4 '-oxygroups bis- (2,3,5,6- tetrafluoroanilines), 3,3 '-bis- (trifluoromethyl) -4,4 '-benzidines etc..These it In, particularly preferred 2,2 '-bis- (trifluoromethyl) -4,4 '-benzidines can further increase the extension at break of hyaline layer Rate.
As the amine of the structure indicated comprising general formula (13), for example, 1,3,5- tri- (4- amino-benzene oxygen) benzene etc. can be enumerated.
As the manufacturing method of polyimides, the method that polyamic acid or poly amic acid ester are subjected to heat cure can be enumerated. As the manufacturing method of polyamic acid or poly amic acid ester, for example, can enumerate: making tetracarboxylic dianhydride and diamine reactant under low temperature Method;Diester is obtained by tetracarboxylic dianhydride and alcohol, the method then reacted in the presence of condensing agent with amine;Pass through four Carboxylic acid dianhydride and alcohol and obtain diester, then by remaining dicarboxylic acid chlorideization, and the method etc. reacted with amine.
The content of above-mentioned heat-resistant polymer in hyaline layer (OC-D) is preferably 50~100 mass %, can further be mentioned High transparency and heat resistance.The content of heat resistant polymer is more preferably 75~100 mass %, and further preferably 90~100 Quality %.
Hyaline layer (OC-D) can further contain surfactant, levelling agent, closely sealed modifying agent, viscosity modifier, resist Oxidant, inorganic pigment, organic pigment, dyestuff etc..
From the viewpoint of the obdurability for improving touch panel, the thickness of hyaline layer (OC-D) is preferably 1 μm or more, more excellent It is selected as 2 μm or more, further preferably 5 μm or more.On the other hand, from the viewpoint of further increasing the transparency, thickness is excellent Be selected as 50 μm hereinafter, more preferably 40 μm hereinafter, further preferably 30 μm or less.
From the viewpoint of the image quality for improving touch panel, transmissivity of the hyaline layer (OC-D) at wavelength 550nm is preferred It is 85% or more.In addition, transmissivity of the hyaline layer (OC-D) at wavelength 550nm after being heat-treated in 150~350 DEG C is excellent It is selected as 80% or more.
Hyaline layer (OC-D) for example can be used following transparent compositions and be formed, and the transparent composition includes above-mentioned heat-resisting Polymer simultaneously cooperates organic solvent, surfactant, levelling agent, closely sealed modifying agent, viscosity modifier, anti-oxidant as needed Agent, inorganic pigment, organic pigment, dyestuff etc. form.
(the first wiring layer (A-1), the second wiring layer (A-2))
Touch panel of the invention includes the first wiring layer (A-1) and the second wiring layer (A-2).
The eyed structure that wiring layer (A-1) and (A-2) preferably there is the mesh for being 0.1~9 μm by line width to be formed.Pass through tool Having line width is 0.1~9 μm of eyed structure, can be achieved at the same time electric conductivity and visibility.From the viewpoint of electric conductivity, The line width of eyed structure is more preferably 0.5 μm or more, further preferably 1 μm or more.On the other hand, from the sight of visibility Point considers that the line width of eyed structure is more preferably 7 μm hereinafter, further preferably 6 μm or less.
From the viewpoint of electric conductivity, the film thickness of wiring layer (A-1) and (A-2) are preferably 0.1 μm or more, more preferably 0.2 μm or more, further preferably 0.3 μm or more.On the other hand, from the viewpoint of visibility, wiring layer (A-1) and (A-2) film thickness be preferably 5 μm hereinafter, more preferably 3 μm hereinafter, further preferably 1 μm or less.
Wiring layer (A-1) and/or wiring layer (A-2) are preferably formed by electroconductive particle.
As electroconductive particle, for example, can enumerate by gold (Au), silver (Ag), copper (Cu), nickel (Ni), tin (Sn), bismuth (Bi), the metallic that the metals such as lead (Pb), zinc (Zn), palladium (Pd), platinum (Pt), aluminium (Al), tungsten (W), molybdenum (Mo) are formed.It can be with Using two or more in them.Wherein, more preferably comprising gold, silver, copper, nickel, tin, bismuth, lead, zinc, palladium, platinum, aluminium and carbon Metallic, further preferably silver particles.
As electroconductive particle, further preferably there is layer (the hereinafter referred to as surface for being coated the surface of electroconductive particle Coating) electroconductive particle.By at least part on the surface of electroconductive particle, there are surface coatings, so as to drop Low surface-active, the mutual reaction of inhibition electroconductive particle or electroconductive particle are reacted with organic principle.In addition, using In the case where light sensitive paste method, it is able to suppress the scattering of the light of the exposure as caused by electroconductive particle, with higher precision pair Wiring pattern is processed.On the other hand, by being heated in 150~350 DEG C or so of high temperature, table can easily be removed Sufficient electric conductivity is presented in face coating.It is preferred that the surface of electroconductive particle is completely coating through surface coating.
Surface coating preferably comprises carbon and/or carbon compound.It, can be further by the inclusion of carbon and/or carbon compound Improve the dispersibility of electroconductive particle.
As the method for forming the surface coating comprising carbon and/or carbon compound on electroconductive particle surface, for example, can Enumerate the method (Japanese Unexamined Patent Publication for contacting it with reactant gas 2007-138287 bulletin) etc..
The average thickness of surface coating is preferably 0.1~10nm.When for the range, it is able to suppress electroconductive particle each other Fusion, form finer pattern.In addition, desired lead can be presented by being heat-treated in 350 DEG C of temperature below Electrically.
In order to form the fine conductive pattern with desired electric conductivity, 1 partial size of electroconductive particle is preferably 10~ 200nm, more preferably 10~60nm.Herein, 1 partial size of so-called electroconductive particle, can be by using scanning electron microscopy The average value of the partial size of randomly selected 100 1 particles of mirror and calculate.For the partial size of each 1 particle, 1 can be measured The major diameter and minor axis of secondary particle are calculated according to its average value.
From the viewpoint of improving electric conductivity, the content of wiring layer (A-1) and the electroconductive particle in wiring layer (A-2) is excellent It is selected as 20 mass % or more, more preferably 50 mass % or more, further preferably 65 mass % or more.On the other hand, from mentioning From the viewpoint of high pattern processability, the content of electroconductive particle be preferably 95 mass % hereinafter, more preferably 90 mass % with Under.
Wiring layer (A-1) and wiring layer (A-2) preferably comprise the organic compound of 0.1~80 mass %.By containing 0.1 The organic compound of quality % or more can assign flexibility to wiring layer, so that the resistance to bend(ing) of wiring layer improves.Organic compound The content of object is preferably 1 mass % or more, more preferably 5 mass % or more.On the other hand, by below containing 80 mass % Organic compound can be improved the electric conductivity of wiring layer.The content of organic compound is more preferably 50 mass % hereinafter, further Preferably 35 mass % or less.
As organic compound, preferably alkali soluble resins.As alkali soluble resins, preferably with (methyl) propylene of carboxyl Sour based copolymer.Herein, so-called (methyl) acrylic acid series copolymer refers to being total to for (methyl) acrylic monomer and other monomers Polymers.As (methyl) acrylic monomer, for example, (methyl) methyl acrylate, (methyl) ethyl acrylate, (first can be enumerated Base) n-propyl, (methyl) isopropyl acrylate, (methyl) n-butyl acrylate, (methyl) sec-butyl acrylate, (first Base) isobutyl acrylate, (methyl) tert-butyl acrylate, (methyl) acrylic acid n-pentyl ester, (methyl) allyl acrylate, (first Base) benzyl acrylate, (methyl) acrylate, butoxy ethyl, butoxytriglycol (methyl) acrylate, (methyl) propylene Sour cyclohexyl, (methyl) dicyclopentanyl acrylate, (methyl) acrylic acid dicyclopentenyl ester, (methyl) 2-EHA, Glycerine (methyl) acrylate, (methyl) glycidyl acrylate, 17 fluorine last of the ten Heavenly stems ester of (methyl) acrylic acid, (methyl) propylene Sour 2- hydroxy methacrylate, (methyl) isobornyl acrylate, (methyl) acrylic acid 2- hydroxy propyl ester, (methyl) isodecyl acrylate, (methyl) Isooctyl acrylate monomer, (methyl) lauryl acrylate, (methyl) acrylic acid 2- methoxy acrylate, methoxy ethyl glycol (methyl) acrylate, methoxyl group diethylene glycol (methyl) acrylate, (methyl) acrylic acid octafluoro pentyl ester, (methyl) acrylic acid Phenoxy ethyl, (methyl) stearyl acrylate base ester, (methyl) acrylic acid trifluoro ethyl ester, (methyl) acrylamide, (methyl) third Olefin(e) acid amino ethyl ester, (methyl) phenyl acrylate, (methyl) acrylic acid 1- naphthalene ester, (methyl) acrylic acid 2- naphthalene ester, benzenethiol (first Base) acrylate, benzyl mercaptan (methyl) acrylate etc..
As other monomers, the compound with carbon-to-carbon double bond can be enumerated, for example, styrene can be enumerated, to methylbenzene second The aromatic ethenyl compounds such as alkene, o-methyl styrene, m-methyl styrene, α-methylstyrene;(methyl) acrylamide, The amides system unsaturated compounds such as N- methylol (methyl) acrylamide, n-vinyl pyrrolidone;(methyl) acrylonitrile, allyl It is alcohol, vinyl acetate, cyclohexyl vinyl ether, n-propyl vinyl ether, isopropyl-ethylene base ether, n-butyl vinyl ether, different Butyl vinyl ether, 2- hydroxyethyl vinyl ether, 4- hydroxybutyl vinyl ether etc..
In order to import into alkali soluble resins for assigning alkali-soluble carboxyl, for example, can enumerate by (methyl) acrylic acid, The method that itaconic acid, crotonic acid, maleic acid, fumaric acid, their acid anhydrides etc. are copolymerized.
From the viewpoint of the speed for improving curing reaction, (methyl) acrylic acid series copolymer is preferably at side chain or molecule end End has carbon-to-carbon double bond.As the functional group with carbon-to-carbon double bond, for example, vinyl, allyl, (methyl) propylene can be enumerated Acid system group etc.
The carboxylate equivalent of alkali soluble resins is preferably 400~1,000g/mol.The carboxylate equivalent of acrylic resin can pass through It measures acid value and calculates.In addition, the double bond of alkali soluble resins is worked as in order to realize hardness and resistance to anti-thread breakage simultaneously with high level Amount is preferably 150~10,000g/mol.The double bond equivalent of acrylic resin can be calculated by measuring iodine number.
The weight average molecular weight (Mw) of alkali soluble resins is preferably 1,000~100,000.By making weight average molecular weight (Mw) exist In above range, it can get good coating characteristics, the dissolubility in developer solution when forming pattern also becomes good.This Place, the Mw of alkali soluble resins refer to the value counted by weight of polystyrene measured by gel permeation chromatography (GPC).
The content of alkali soluble resins is preferably 5~30 mass % in wiring layer (A-1) and (A-2).
Wiring layer (A-1) and (A-2) can contain organo-tin compound and/or metal chelate compound.Wiring layer passes through Containing organo-tin compound and/or metal chelate compound, can further increase and hyaline layer (OC-D) and/or insulating layer (OC-1) closely sealed.For organo-tin compound, metal chelate compound be can get the case where not applying carrying capacity of environment The lower effect for improving adaptation, therefore more preferable metal chelate compound.
So-called organo-tin compound refers to the acylate of tin or is bonded at least one carbon atom on tin atom Compound.For example, the acylates such as 2 ethyl hexanoic acid tin, tin dilaurate tin can be enumerated;Dibutyltin diacetate, tin dilaurate two Butyl tin, dibutyitin maleate, dibutyl tin bis- (2-ethylhexyl mercaptoacetates), dibutyl tin are bis-, and (thioacetic acid is different pungent Ester), dioctyl tin diacetate, tin dilaurate dioctyl tin, dioctyl tin maleate, dimethyltin diacetate, tin dilaurate two Methyl tin, maleic acid stannous methide, oxalic acid stannous phenide, tin dilaurate stannous phenide, maleic acid stannous phenide, two fourth of dichloro Ji Xi, dichloro dipropyl tin, Dichlorodiethyl tin, dimethyl tin dichloride, trichlorine butyl tin, trichloromethyl tin, dichlorophenyl Tin, Dibutyltin oxide, dimethyl tin oxide, dioctyl tin oxide, tetrabutyltin, tetramethyl tin, tetraphenyltin, allene base The compounds such as tributyl tin, allyl tributyltin, allyl triphenyltin, tin diethyl.Two kinds in them can be contained More than.
So-called metal chelate compound refers to central metal and matches at more than two positions and the central metal The compound of the ligand of position.For metal chelate compound, ligand is easily separated from, the alkali solubility functional group with alkali soluble resins Complex compound is formed, thus, it is possible to improve adaptation.As the metallic element of metal chelate compound, for example, can enumerate Au (gold), Ag (silver), Cu (copper), Cr (chromium), Fe (iron), Co (cobalt), Ni (nickel), Bi (bismuth), Sn (tin), Pb (lead), Zn (zinc), Pd (palladium), In (indium), Pt (platinum), Mg (magnesium), Al (aluminium), Ti (titanium), Zr (zirconium), W (tungsten), Mo (molybdenum).Among these, from the disengaging of ligand From the viewpoint of easiness, the metal being preferably selected from Mg (magnesium), Al (aluminium), Ti (titanium) and Zr (zirconium), from alkali solubility official Metal from the viewpoint of the Stability of Metal Complexes that can be rolled into a ball, more preferably in Al (aluminium) and Zr (zirconium).
As metal chelate compound, for example, can enumerate, bis- (acetylacetone,2,4-pentanedione roots) closes magnesium, bis- (oacetic acid roots) closes Magnesium, isopropoxy list (acetylacetone,2,4-pentanedione root) close magnesium, isopropoxy list (oacetic acid root) closes the magnesium chelate compounds such as magnesium;Second Ethyl acetoacetic acid aluminium ethide diisopropyl ester, three (oacetic acid roots) close aluminium, acetoacetate alkyl aluminum diisopropyl ester, single acetyl acetone Root bis- (oacetic acid roots) closes aluminium, three (acetylacetone,2,4-pentanedione roots) close the aluminium chelate compounds such as aluminium;Four (acetylacetone,2,4-pentanedione roots) conjunction titanium, It is bis- (pungent that diisopropoxy bis- (oacetic acid roots) closes titanium, diisopropoxy bis- (acetylacetone,2,4-pentanedione roots) conjunction titanium, two n-octyloxies Glycol root) close titanium, diisopropoxy bis- (triethanolamine roots) conjunction titanium, dihydro bis oxide (2 hydroxy propanoic acid root) conjunction titanium, two hydrogen-oxygens Change the titaniums chelate compounds such as bis- (2 hydroxy propanoic acid root) titanium ammonium salts;Four (acetylacetone,2,4-pentanedione root) zirconiums, the bis- (ethyls of dibutoxy Acetate) the zirconiums chelate compound such as zirconium, three butoxy lists (acetylacetone,2,4-pentanedione root) zirconium, three butoxy monostearate zirconiums;Bis- (acetyl Acetone root) the golden chelate compound such as alloy, bis- (oacetic acid root) alloys;Bis- (acetylacetone,2,4-pentanedione roots) closes silver, bis- (ethyl second Ethyl acetoacetic acid root) close the silver-colored chelate compound such as silver;Bis- (acetylacetone,2,4-pentanedione roots) closes copper, bis- (oacetic acid roots) closes the copper such as copper chelating Compound;Bis- (acetylacetone,2,4-pentanedione roots) closes chromium, bis- (oacetic acid roots) closes the chromium chelate compounds such as chromium;Bis- (acetylacetone,2,4-pentanedione roots) Close iron, bis- (oacetic acid roots) closes the iron chelating compounds such as iron;Bis- (acetylacetone,2,4-pentanedione roots) closes cobalt, bis- (oacetic acids Root) close the cobalts chelate compounds such as cobalt;Bis- (acetylacetone,2,4-pentanedione roots) closes nickel, bis- (oacetic acid roots) closes the nickel chelate compounds such as nickel Object;Bis- (acetylacetone,2,4-pentanedione roots) closes bismuth, bis- (oacetic acid roots) closes the bismuths chelate compounds such as bismuth;Bis- (acetylacetone,2,4-pentanedione roots) closes Tin, bis- (oacetic acid roots) close the tin chelate compounds such as tin;Bis- (acetylacetone,2,4-pentanedione roots) closes lead, bis- (oacetic acid roots) Close the lead chelate compounds such as lead;Bis- (acetylacetone,2,4-pentanedione roots) closes zinc, bis- (oacetic acid roots) closes the zinc chelate compounds such as zinc;It is double (acetylacetone,2,4-pentanedione root) closes palladium, bis- (oacetic acid roots) closes the palladiums chelate compounds such as palladium;Bis- (acetylacetone,2,4-pentanedione roots) closes indium, double (oacetic acid root) closes the indiums chelate compounds such as indium;Bis- (acetylacetone,2,4-pentanedione roots) closes platinum, bis- (oacetic acid roots) closes platinum Equal platinum chelate compound;Bis- (acetylacetone,2,4-pentanedione roots) closes tungsten, bis- (oacetic acid roots) closes the tungsten chelate compounds such as tungsten;Bis- (second Acyl acetone root) close molybdenums chelate compounds such as molybdenum, bis- (oacetic acid roots) conjunction molybdenum etc..
From the viewpoint of further increasing substrate adaptation, wiring layer (A-1) and organo-tin compound in (A-2) and The total content of metal chelate compound is preferably 0.01 mass % or more, more preferably 0.05 mass % or more, further preferably For 0.1 mass % or more.On the other hand, from the viewpoint of improving electric conductivity, forming finer pattern, preferably 10 matter % is measured hereinafter, more preferably 5 mass % are hereinafter, further preferably 5 mass % or less.
Wiring layer (A-1) and (A-2) preferably also produce acid containing dispersing agent, Photoepolymerizationinitiater initiater, monomer, photoacid generator, heat Agent, solvent, sensitizer, the pigment for having absorption to visible light and/or dyestuff, closely sealed modifying agent, surfactant, polymerization inhibitor etc..
Wiring layer (A-1) and (A-2) can be made of identical material, can also be made of different materials.
Wiring layer (A-1) and (A-2) can be used for example conductive composition and formed.It, can as conductive composition To use the composition comprising electroconductive particle above-mentioned, alkali soluble resins and solvent.Conductive composition can according to need Contain organo-tin compound, metal chelate compound, dispersing agent, Photoepolymerizationinitiater initiater, monomer, photoacid generator, thermal acid generator, quick Agent, the pigment for having absorption to visible light and/or dyestuff, closely sealed modifying agent, surfactant or polymerization inhibitor etc..
In addition, alternatively, wiring layer (A-1) and/or (A-2) are preferably also transparent electrode.As wiring layer (A-1) and/or (A-2) is using in the case where transparent electrode, and without using expensive silver etc., existing production equipment can be used To form wiring layer.As the material for constituting transparent electrode, for example, tin indium oxide (ITO), indium zinc oxide (IZO), oxygen can be enumerated Change zinc (ZnO), indium oxide zinc-tin (IZTO), cadmium tin (CTO), PEDOT (poly (3,4- Ethylenedioxythiophene), poly- (3,4-ethylene dioxythiophene)), carbon nanotube (CNT), plain conductor etc..It can make With two or more in them.Among these, preferred tin indium oxide (ITO).
(insulating layer (OC-0), (OC-1), (OC-2))
In touch panel of the invention, between the first wiring layer (A-1) and the second wiring layer (A-2) absolutely configured with first Edge layer (OC-1).Pass through the first insulating layer (OC-1), it can be ensured that between the first wiring layer (A-1) and the second wiring layer (A-2) Insulating properties.
Furthermore, it is possible to which the upper surface in above-mentioned second wiring layer (A-2) (is in the face for contacting the first insulating layer (OC-1) The face of opposite side) further configure second insulating layer (OC-2).By being able to suppress in atmosphere with second insulating layer (OC-2) Moisture reach the second wiring layer (A-2), further increase the humidity resistance of touch panel.
Insulating layer (OC-2) preferably has photonasty and adhesiveness.Herein, so-called photonasty indicates the irradiation by light Cause the property of chemical change.So-called adhesiveness, expression only can be short by small pressure under room temperature or heating condition The property being bonded in time.By make insulating layer (OC-2) have photonasty, so as to accurately only remove and external electrical Insulating layer (OC-2) on the coupling part of pole can easily make to expose with the coupling part of external electrode.In addition, by making Insulating layer (OC-2) has adhesiveness, so as to easily fit in other structures such as glass cover-plate, cover film, oled substrate Part.
Furthermore, it is possible to which there is insulating layer (OC-0) between above-mentioned hyaline layer (OC-D) and above-mentioned first wiring layer (A-1). By further suppressing residue when the first wiring layer (A-1) processing, further increasing touch panel with insulating layer (OC-0) Humidity resistance.
Insulating layer (OC-0), (OC-1) and (OC-2) can be respectively made of identical material, can also be by different materials Material is constituted.
From the viewpoint of further increasing insulating properties, the film thickness of above-mentioned insulating layer (OC-1) and (OC-2) are preferably 0.1 μ M or more, more preferably 0.5 μm or more.On the other hand, from the viewpoint of further increasing the transparency, preferably 10 μm hereinafter, More preferably 3 μm or less.
From the viewpoint of the residue for further suppressing wiring layer (A-1), the film thickness of above-mentioned insulating layer (OC-0) is preferably 0.05 μm or more, more preferably 0.1 μm or more.On the other hand, from the viewpoint of further increasing the transparency, above-mentioned insulating layer (OC-0) film thickness is preferably 5 μm hereinafter, more preferably 2 μm or less.
Above-mentioned insulating layer (OC-0), (OC-1) and (OC-2) is preferably by the insulating properties composition shape containing alkali soluble resins At.
As alkali soluble resins, (methyl) acrylic acid series copolymer above-mentioned, Cardo system resin can be enumerated.Cardo system tree Rouge can be improved hydrophobicity and further increase the insulating properties of insulating layer, therefore preferably.
As Cardo system resin, preferably containing more than two following chemical formulas (5) indicate structural unit and Cardo system resin containing polymerizable group and alkali solubility group.
[chemical formula 7]
Cardo system resin can for example be obtained by following manner: being made epoxide and contained radically polymerizable group group The reaction product of acid compound further reacted with acid dianhydride.
Reacting and reacted with acid dianhydride as epoxide and the acid compound rolled into a ball containing radically polymerizable group Used in catalyst, for example, the ammoniums such as tetrabutyl ammonium acetate series catalysts, 2,4,6- tri- (dimethylaminomethyl) benzene can be enumerated The catalysis of the chromium systems such as phosphorus series catalysts, chromium acetylacetonate, the chromium chlorides such as the amine systems such as phenol or dimethyl benzyl amine catalyst, triphenylphosphine Agent etc..
As epoxide, the compound having following structure can be enumerated.
[chemical formula 8]
As the acid compound rolled into a ball containing radically polymerizable group, for example, (methyl) acrylic acid, mono succinate can be enumerated (2- (methyl) acryloyloxyethyl ester), phthalic acid list (2- (methyl) acryloyloxyethyl ester), tetrahydrophthalic acid Single (2- (methyl) acryloyloxyethyl ester), 4-Vinyl phenol etc..
As acid dianhydride, from the viewpoint of the chemical resistance for improving insulating layer, preferably pyromellitic acid anhydride, 3, 3 ', 4,4 '-bibenzene tetracarboxylic dianhydrides, 2,3,3 ', 4- bibenzene tetracarboxylic dianhydride, 2,2 ', 3,3 '-bibenzene tetracarboxylic dianhydrides etc..Separately Outside, for acid dianhydride, a part of acid dianhydride can also be replaced with into acid anhydrides for the purpose for adjusting molecular weight and used.
In addition, preferably using commercially available product as Cardo system resin, " WR-301 (trade name) " ((strain) can be enumerated ADEKA system), " V-259ME (trade name) " (Nippon Steel live aurification (strain) system), " OGSOL (registered trademark) CR-TR1 ", " OGSOL (registered trademark) CR-TR2 (trade name) ", " OGSOL (registered trademark) CR-TR3 ", " OGSOL (registered trademark) CR- TR4 ", " OGSOL (registered trademark) CR-TR5 ", " OGSOL (registered trademark) CR-TR6 " (the above are Osaka Gas Chemicals (strain) system) etc..
From improve coating characteristics from the viewpoint of, the weight average molecular weight (Mw (A1)) of (methyl) acrylic acid series copolymer and The weight average molecular weight (Mw (A2)) of Cardo system resin is preferably 2,000 or more, from improve pattern formed in developer solution From the viewpoint of dissolubility, preferably 200,000 or less.Herein, weight average molecular weight refers to through GPC measurement according to polyphenyl second The value of alkene conversion meter.In addition, in the case where containing (methyl) acrylic acid series copolymer and Cardo system resin, from inhibition layer point From and from the viewpoint of forming uniform insulating layer, the ratio between Mw (A1) and Mw (A2) (Mw (A2)/Mw (A1)) be preferably 0.14 with On.On the other hand, from inhibition layer separate and from the viewpoint of forming uniform insulating layer, Mw (A2)/Mw (A1) be preferably 1.5 with Under, more preferably 1 or less.
In above-mentioned insulating properties composition, the total content of (methyl) acrylic acid series copolymer and Cardo system resin can basis Desired film thickness, purposes arbitrarily select, 10 mass % or more and 70 matter in preferably 100 mass % of whole solid state components Measure % or less.
Above-mentioned insulating properties composition can contain the amine system light stabilizer that is obstructed.By containing the amine system light stabilizer that is obstructed, energy It is enough further reduced the coloring of insulating layer, further increases tone and weatherability.
As the amine system light stabilizer that is obstructed, for example, the compound etc. of following formula (7)~(11) expression can be enumerated.It can contain Have two or more in them.Among these, from the aspect of with high reactivity, the change of more preferable chemical formula (7) or (8) expression Close object.
[chemical formula 9]
Wherein, in above-mentioned general formula (9)~(11), a, b, c and d each independently represent 0~15 integer.
In above-mentioned insulating properties composition, the content of amine system of being obstructed light stabilizer is preferably 100 mass % of whole solid state components In 0.01 mass % or more, more preferably 0.05 mass % or more.In addition, the content for the amine system light stabilizer that is obstructed is preferably 10 Quality % is hereinafter, more preferably 5 mass % or less.
Above-mentioned insulating properties composition, which also can according to need, also contains polyfunctional monomer, curing agent, ultraviolet absorbing agent, resistance The additives such as poly- agent, closely sealed modifying agent, solvent, surfactant, dissolution inhibitor, stabilizer, defoaming agent.
(photonasty adhesive layer (OC-R))
It is preferred that also configuring photonasty adhesive layer (OC-R) in the upper surface of above-mentioned second insulating layer (OC-2).Pass through photonasty Adhesive layer (OC-R), can further increase humidity resistance.In addition, by making photonasty adhesive layer (OC-R) that there is photonasty, Accurately can only remove the photonasty adhesive layer (OC-R) on the coupling part with external electrode, can easily make with Expose the coupling part of external electrode.In addition, by making photonasty adhesive layer (OC-R) that there is adhesiveness, thus even if insulating Layer (OC-2) do not have adhesiveness in the case where, also can easily fit in glass cover-plate, cover film, oled substrate etc. other Component.
As photonasty adhesive layer, the photonasty bonded combination containing alkali soluble resins and photographic composition is preferably used Object.As alkali soluble resins, preferably using acrylic resin, organic siliconresin, polyurethane resin etc..From the viewpoint of the transparency Consider, particularly preferred acrylic resin or organic siliconresin.
(light shield layer)
In touch panel, preferably under the lower part of above-mentioned first wiring layer (A-1) and above-mentioned second wiring layer (A-2) Portion and/or the top of above-mentioned first wiring layer (A-1) and the top of above-mentioned second wiring layer (A-2) are configured with light shield layer. By with light shield layer, being able to suppress by the reflection of wiring layer bring light, wiring is inhibited to show.Herein, in touch panel, institute Lower part is called, refers to that side existing for hyaline layer (OC-D), so-called top refer to side existing for the second wiring layer (A-2).? In the case that the lower part of one wiring layer (A-1) and the second wiring layer (A-2) is configured with light shield layer, it is able to suppress from hyaline layer (OC- D wiring when) side is observed shows.In such a case it is possible to the lower part in the first wiring layer (A-1) and the second wiring layer respectively (A-2) lower part is respectively arranged the light shield layer of one layer of light shield layer, total two layers or more of configuration, but than the first wiring layer (A-1) and When more only one layer of light shield layer is arranged by the position of lower part in second wiring layer (A-2), process can be omitted, therefore preferably.Another party Face is able to suppress in the case where the top of the first wiring layer (A-1) and the second wiring layer (A-2) is configured with light shield layer from the Wiring when the two wiring layers side (A-2) is observed shows.In this case, than the first wiring layer (A-1) and the second wiring layer (A- 2) when only one layer of light shield layer more being set by the position on top, process can be omitted, therefore preferably.In addition, in the first wiring layer (A- 1) in the case that light shield layer is set in top the two of lower part and the second wiring layer (A-2), it is able to suppress the wiring on two sides Show.
The specific location of configuration light shield layer is preferably between the first wiring layer and hyaline layer (OC-D), the second wiring layer (A- 2) any position in the surface of surface and second insulating layer (OC-2).
From further suppressing from the viewpoint of wiring shows, the optical density (hereinafter referred to as OD value) of light shield layer is preferably 0.2 More than, more preferably 0.5 or more, further preferably 1.0 or more.For example, by being formed by aftermentioned preferred insulation composition OD value can be easily adjusted in above range by light shield layer.It should be noted that the OD value of light shield layer can be according to by making The transmission luminous intensity (I) and incident light of light shield layer obtained from being measured with microspectroscope (big tomb electronics MCPD2000) Intensity (I0), found out by following relational expressions (a).
OD value=log10 (I0/I) (a)
In addition, light shield layer is preferred to the reflectivity of the light of wavelength 550nm from further suppressing from the viewpoint of wiring shows For 30% hereinafter, more preferably 20% hereinafter, further preferably 10% or less.For example, by using aftermentioned preferred insulation Composition forms light shield layer, so as to easily adjusting reflectivity to above range.
Light shield layer preferably has insulating properties.From the viewpoint of inhibiting malfunction from the electrical characteristics for improving touch panel, hide The sheet resistance value of photosphere is preferably 108Ω/ or more, more preferably 1012Ω/ or more, further preferably 1015Ω/□ More than.It should be noted that Hiresta UP MCP-HT450 ((strain) Mitsubishi can be used in the sheet resistance value of light shield layer Chemical Analytech system), apply voltage be 10V under conditions of be measured.
As the material for forming light shield layer, Opacifying pigment is made to be scattered in as the material for forming insulating layer and show above Composition obtained from the insulating properties composition of example is preferred.As Opacifying pigment, it is organic that black, nigrosine etc. can be enumerated Pigment;The metals such as titanium oxynitrides, titanium nitride, carbon black, graphite, cobalt oxide, titanium, copper, iron, manganese, cobalt, chromium, nickel, zinc, calcium, silver are micro- Grain;Inorganic pigments such as metal oxide, composite oxides, metal sulfide, metal nitride, metal carbides etc..These it In, from the viewpoint of light-proofness and reflection colour characteristic, more preferable carbon black or titanium nitride.
From the viewpoint of improving light-proofness and insulating properties, the specific surface for the Opacifying pigment that N2 adsorption BET method measures is utilized Product is preferably 10m2/ g or more, more preferably 20m2/ g or more.On the other hand, from agglutination, the raising dispersion stabilization for inhibiting particle From the viewpoint of, preferably 600m2/ g is hereinafter, more preferably 200m2/ g is hereinafter, further preferably 100m2/ g or less.
Use carbon black as in the case where Opacifying pigment, preferably improves the carbon black of insulating properties by being surface-treated. Surface as the surface treatment for improving insulating properties, such as based on resin is coated (Japanese Unexamined Patent Publication 2002-249678 public affairs Report), the wet oxidation on surface processing (No. 4464081 bulletins of Japanese Patent No.), based on the organic group comprising non-polymeric group The surface modification (Japanese Unexamined Patent Application Publication 2008-517330 bulletin) etc. of group is known.
In order to further increase insulating properties, the carbon atom ratio of carbon blacksurface is preferably 95% hereinafter, more preferably 90% Below.In addition, the sulphur atom ratio of carbon blacksurface is higher, alkali soluble resins is more easily adsorbed at carbon black, passes through steric hindrance Inhibit the mutual contact of carbon black, therefore the insulating properties of light shield layer can be further increased.Therefore, the sulphur atom ratio of carbon blacksurface Preferably 0.5% or more, more preferably 1.0% or more.
From the viewpoint of improving light-proofness, the content of the Opacifying pigment in light shield layer is preferably 40 mass % or more, more Preferably 60 mass % or more.On the other hand, from the viewpoint of the adaptation and pattern processability for improving light shield layer and substrate, Content is preferably 80 mass % hereinafter, more preferably 75 mass % or less.
From the viewpoint of the intensity for improving touch panel, the thickness of touch panel is preferably 1 μm or more, more preferably 3 μ M or more, further preferably 5 μm or more.On the other hand, from the viewpoint of further increasing resistance to bend(ing), preferably 40 μm Hereinafter, more preferably 30 μm hereinafter, further preferably 25 μm or less.
For touch panel, it is preferably based on the L*a*b* colour system as defined in 1976 as International Commission on Illumination The value of b* is -5~5.By making its range, is adjusted without carrying out excessive coloration, display can be further increased The visibility of device.The value of b* is more preferably -4~4, further preferably -3~3.It should be noted that touch panel B* value can be calculated by following manner: use spectrophotometer (CM-2600d;KONICA MINOLTA (strain) system), from glass base Plate side measures the reflectivity of whole reflected lights, is measured to the color characteristics b* in CIE (L*, a*, b*) color space.
Then, the manufacturing method of touch panel of the invention is illustrated.The manufacturing method of touch panel of the invention Including following processes: at least sequentially forming hyaline layer above-mentioned (OC-D), the first wiring layer (A-1), on temporary support body One insulating layer (OC-1) and the second wiring layer (A-2) and the process for making transfer member;Via transparent adhesive layer, by above-mentioned transfer Component with temporary support body in opposite side face paste together in substrate process;And the process for removing temporary support body.It is above-mentioned Bright layer (OC-D) has the function of removing.Herein, so-called transfer member, refers to: being at least sequentially laminated with hyaline layer (OC- above-mentioned D), the component of the first wiring layer (A-1), the first insulating layer (OC-1) and the second wiring layer (A-2).In addition, so-called have removing Function, be refer to the interface of above-mentioned temporary support body and above-mentioned hyaline layer (OC-D) by above-mentioned temporary support body with it is above-mentioned Transfer member removing.It as specific stripping means, can enumerate: be carried out in the interface of temporary support body and hyaline layer (OC-D) The method of mechanical stripping;By being impregnated in chemical liquids such as hot water, organic solvent etc., by temporary support body and hyaline layer (OC- D the method for interface peel);Alternatively, by the laser for irradiating 300~400nm wavelength from temporary support side, by temporary support The method of the interface peel of body and hyaline layer (OC-D);Etc..
As temporary support body, for example, silicon wafer, ceramic substrate, organic system substrate etc. can be enumerated.As ceramic substrate, For example, the glass substrate that soda-lime glass, alkali-free glass, pyrex, quartz glass etc. are formed by glass can be enumerated;Aluminium oxide Substrate, aluminium nitride substrate, silicon carbide substrate.As organic system substrate, for instance, it may be preferable to enumerate epoxy substrate, polyetherimide Resin substrate, polyether ketone resin substrate, polysulfones system resin substrate, polyimide film, polyester film etc..
Firstly, forming hyaline layer (OC-D) on temporary support body.The forming method of hyaline layer (OC-D) preferably includes: will Above-mentioned transparent composition is coated on the painting process on temporary support body;The prebake conditions that the transparent composition of coating is dried Process;And by its cured curing process.
As the method being coated on transparent composition on temporary support body, spin coater, stick has been used to apply for example, can enumerate Machine, knife type coater, roll coater, die coating machine, calender courter, the coating of meniscus coating machine, silk-screen printing, spraying coating, Dip-coating etc..
As the drying means in prebake conditions process and curing process, for example, heat drying can be enumerated, be dried under reduced pressure, very Empty drying, infrared radiation etc..As heating and drying device, for example, heating plate, air drier (baking oven) etc. can be enumerated.
The temperature and time of prebake conditions process can be carried out according to the composition of transparent composition, the film thickness of the coated film to be dried It suitably sets.Heating temperature is preferably 50~150 DEG C, and heating time is preferably 10 seconds~30 minutes.
The atmosphere of curing process, temperature and time can be according to the compositions of transparent composition, the film thickness of the coated film to be dried It is appropriately configured, is preferably solidified in air.From the viewpoint of being sufficiently carried out solidification, heating temperature is preferably 150 DEG C or more, more preferably 180 DEG C or more.On the other hand, from further suppress by heat caused by xanthochromia, further increase From the viewpoint of tone, heating temperature be preferably 350 DEG C hereinafter, more preferably 300 DEG C hereinafter, further preferably 245 DEG C with Under.In addition, heating time is preferably 5 minutes or more from the viewpoint of being sufficiently carried out solidification, more preferably 20 minutes with On.On the other hand, from the viewpoint of further suppressing the xanthochromia caused by heating, further increasing tone, heating time is excellent It is selected as 120 minutes hereinafter, more preferably 80 minutes or less.
Surface treatment can further be implemented to the hyaline layer (OC-D) formed in the manner described above.By implementing at surface Reason, so as to change the surface state of hyaline layer (OC-D), in the formation process of first wiring layer (A-1) after inhibiting etc. The reduction of pattern processability as caused by development residue.It can be enumerated at corona discharge as surface treatment method, such as preferably Reason, corona treatment, UV ozone treatment etc..Surface state is modified, further from while inhibiting surface deterioration From the viewpoint of reducing residue, preferably Corona discharge Treatment or corona treatment, more preferable corona treatment.Another party Face, from the viewpoint of the simplicity of device, preferably Corona discharge Treatment or UV ozone treatment, more preferable UV ozone treatment.
Furthermore it is possible to be further formed insulating layer (OC-0) on being formed by hyaline layer (OC-D).It is insulated by being formed Layer (OC-0), to even if also can further be mentioned in the case where not implementing above-mentioned surface treatment to hyaline layer (OC-D) The pattern processability of the first wiring layer (A-1) after height etc..
Insulating layer (OC-0) can be used above-mentioned insulating properties composition and be formed.Forming method preferably includes will be above-mentioned exhausted Edge composition is coated on the painting process on insulating layer (OC-0);The preliminary drying that coated insulating properties composition is dried Roasting process;And by its cured curing process.
In addition, also preferably forming inoranic membrane as insulating layer (OC-0).By forming inoranic membrane, it can be further increased The pattern processability of the first wiring layer (A-1) afterwards etc..In addition, being able to suppress metal impurities, moisture etc. from hyaline layer (OC-D) Movement to the first wiring layer (A-1) improves the reliability of wiring layer, therefore preferably.
As the type of inoranic membrane, Si system film, C system film, metallic film etc. can be enumerated.As Si system film, can lift Si, SiO outx、SoCx、SiNx、SiOxCy、SiOxNy、SiOxFy, etc..As C system film, can enumerate DLC (a-C:H), N-DLC, Si-DLC, F-DLC, Metal-DLC, graphene etc..As metallic film, TiO can be enumeratedx、SnOx、AlOx, W etc..From later From the viewpoint of the pattern processability of first wiring layer (A-1) etc. improves, more preferable Si system film.
Then, the first wiring layer (A-1) is formed on obtained hyaline layer (OC-D) or insulating layer (OC-0).First wiring The forming method of layer (A-1) preferably includes: the painting process above-mentioned conductive composition being coated on real estate;To coating The prebake conditions process that conductive composition is dried;Process (the exposure of lattice is exposed and developed and formed to it Process and developing procedure);And cured curing process is carried out to obtained lattice.
It is coated on the method on real estate as by conductive composition, the coating method as transparent composition can be enumerated And exemplary method.
As the drying means in prebake conditions process and curing process, the drying means as transparent composition can be enumerated and Exemplary method.
The temperature and time of prebake conditions can be fitted according to the composition of conductive composition, the film thickness of the coated film to be dried Work as setting.Heating temperature is preferably 50~150 DEG C, and heating time is preferably 10 seconds~30 minutes.
As light source used in exposure process, for example, it is preferable to the j line of mercury lamp, i line, h line, g line.
As developer solution used in developing procedure, for example, can enumerate alkaline matter is dissolved in the water obtained from alkali Property aqueous solution, the alkaline matter are as follows: sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium metasilicate, sodium metasilicate, ammonium hydroxide Equal inorganic bases;The primary amine class such as ethamine, n-propylamine;The secondary amine class such as diethylamine, di-n-propylamine;The uncles such as triethylamine, methyl-diethyl-amine Amine;The tetra-alkyl ammonium hydroxides classes such as tetramethylammonium hydroxide (TMAH);The quaternary ammonium salts such as choline;Triethanolamine, diethanol amine, list The alcamines such as ethanol amine, dimethylaminoethanol, DEAE diethylaminoethanol;Pyrroles, piperidines, 1,8- diazabicyclo [5,4,0]- The organic bases such as the cyclic amines such as 7- hendecene, 1,5- diazabicyclo [4,3,0] -5- nonane, morpholine;Etc..It can be to this The water-miscible organic solvents such as ethyl alcohol, gamma-butyrolacton, dimethylformamide, n-methyl-2-pyrrolidone are suitably added in a little.
In addition, more good conductive pattern in order to obtain, it is also preferred that further being added into these alkaline-based developers The surfactants such as the nonionic surfactants of 0.01~1 mass %.
The atmosphere of curing process, temperature and time can be according to the compositions of conductive composition, the film of the coated film to be dried Thickness is appropriately configured, and is preferably solidified in air.Heating temperature is preferably 100~300 DEG C, more preferably 200~300 ℃.Heating time is preferably 5 minutes~120 minutes.
Further, it is formed on being formed by wiring layer (A-1) the first insulating layer (OC-1).First insulating layer (OC-1) Forming method preferably include: above-mentioned insulating properties composition is coated on the painting process on wiring layer (A-1);To the exhausted of coating The prebake conditions process that edge composition is dried;The process for being exposed to it and developing and forming pattern is (exposure process, aobvious Shadow process);And by the cured curing process of obtained pattern.Each process can be carried out similarly with wiring layer (A-1).
Then, it is formed on the first insulating layer (OC-1) the second wiring layer (A-2).Second wiring layer (A-2) it is available with The same method of first wiring layer (A-1) is formed.
It can be further formed on the second wiring layer (A-2) second insulating layer (OC-2).By forming second insulating layer (OC-2), the moisture being able to suppress in atmosphere reaches wiring layer (A-2), further increases humidity resistance.
At this point, it is preferred that the second insulating layer (OC-2) on the lead division top of electrode is removed.By critically removing in advance The part, so as to the connection with external electrode after being easy to carry out.
In addition, it is also preferred that being further formed photonasty adhesive layer on second insulating layer (OC-2).By becoming this composition, Insulating properties and humidity resistance can be further increased.Second insulating layer (OC-2) is available same as the first insulating layer (OC-1) Method is formed.
It preferably further include the process for forming light shield layer.As the forming method of light shield layer, for example, can enumerate: (i) exists Light shield layer is formed on hyaline layer (OC-D), to become the side with the first wiring layer (A-1) and the second wiring layer (A-2) same shape Formula carries out pattern processing to light shield layer, then forms the first wiring layer (A-1), the first insulating layer (OC-1), the second wiring layer (A- 2) method;(ii) it is formed on hyaline layer (OC-D) the first light shield layer (B-1), to become identical as the first wiring layer (A-1) The mode of shape carries out pattern processing to the first light shield layer, then forms the first wiring layer (A-1) and the first insulating layer (OC-1), Then, it is formed on the first insulating layer (OC-1) the second light shield layer (B-2), to become and the second wiring layer (A-2) same shape Mode to the second light shield layer carry out pattern processing, then form the method for above-mentioned second wiring layer (A-2);(iii) transparent The first wiring layer (A-1), the first insulating layer (OC-1) and the second wiring layer (A-2) are formed on layer (OC-D), then in the second cloth Light shield layer is formed on line layer (A-2), in a manner of becoming with the first wiring layer (A-1) and the second wiring layer (A-2) same shape The method that pattern processing is carried out to light shield layer;Etc..
Manners generally described above, can be obtained be formed on temporary support body above-mentioned transfer member with the interim of transfer member Supporting mass.
Then, via transparent adhesive layer, what it is by above-mentioned transfer member is in the face paste of opposite side together in base with temporary support body Then material will be removed between the hyaline layer (OC-D) and temporary support body of the temporary support body with transfer member, only remove interim Thus supporting mass completes touch panel.Herein, so-called substrate, preferably glass substrate, ilm substrate, can be in glass substrate, film Component is formed on substrate.As such substrate, specifically, it is preferable that glass cover-plate, cover film, light polarizing film, colour filter can be enumerated Device substrate, display base plate etc..
As the method for removing hyaline layer (OC-D) and temporary support body, for example, can enumerate from the temporary support body back side Laser is irradiated to hyaline layer (OC-D) and remove method, the temporary support body with touch panel is being held in 0~80 DEG C Impregnated 10 seconds~10 hours in solvent and/or purified water etc. and remove method, from upper surface cutting hyaline layer (OC-D) and from Cut end face carry out mechanical stripping method etc., from the viewpoint of the humidity resistance for further increasing touch panel, preferably from Cut the method that end face carries out mechanical stripping.
In addition, alternatively, can above-mentioned stripping process carried out to the temporary support body with transfer member and incite somebody to action After transfer member and the removing of temporary support body, via transparent adhesive layer by the transfer member with temporary support body in opposite side Thus face paste completes touch panel together in substrate.Furthermore, it is possible in the second wiring layer of the temporary support body with transfer member (A-2) protective film is bonded on, transparent adhesive layer (hereinafter referred to as OCA) carries out above-mentioned bonding process and stripping process afterwards.From patch From the viewpoint of closing precision, more preferably shelled after showing consideration for the temporary support with transfer member together in substrates such as glass substrates From process.
As described above, touch panel of the invention is by that will face after being formed on the excellent temporary support body of dimensional accuracy When supporting mass removing, remove and manufacture, therefore the excellent processing method of dimensional accuracy can be suitable for.With regard to touch of the invention For panel, by making hyaline layer (OC-D) containing the heat-resistant polymer comprising above-mentioned specific structure, to can inhibit electric conductivity The residue of composition, tone and humidity resistance are excellent.In accordance with the invention it is possible to which fine pattern can be formed and should flexibility by providing Touch panel.
The present invention is readily applicable to the structural body with wiring other than touch panel.So-called structural body herein, example Such as, various flexible sensors such as the flexible displays such as miniature LED, RFID etc. can be enumerated.
Structural body of the invention is the structure with the position for being laminated with the first wiring layer (A-1) on hyaline layer (OC-D) Body, above-mentioned hyaline layer (OC-D) contain the heat-resisting of the structure of the structure and the following general formula (2) expression that indicate with the following general formula (1) Polymer.
[chemical formula 10]
In above-mentioned general formula (1) and (2), R1And R2Each independently represent monovalent organic group;M and n are each independently represented 0~4 integer;M R1And n R2Respectively it can be the same or different.
Embodiment
Hereinafter, being illustrated to the embodiment of the present invention.Firstly, being said to material used in Examples and Comparative Examples It is bright.
(acid dianhydride)
ODPA:3,3 ', 4,4 '-diphenyl ether tetracarboxylic acid dianhydrides (compound comprising the structure that general formula (2) indicate)
PMDA:1,2,4,5- pyromellitic dianhydride
PMDA-HS:1,2,4,5- cyclohexanetetracarboxylic acid dianhydride.
(diamines)
DDS: bis- (4- aminophenyl) sulfones (compound comprising the structure that general formula (1) indicates)
M-BAPS: bis- [4- (3- amino-benzene oxygen) phenyl] sulfones (compound comprising the structure that general formula (1) and (2) indicates)
Bis- (3- amino-4-hydroxylphenyl) hexafluoropropane of BAHF:2,2- (compound comprising the structure that general formula (3) indicate)
Bis- (trifluoromethyl) benzidine of TFMB:2,2 '-(compound comprising the structure that general formula (12) indicate)
Bis- (4- aminophenyl) fluorenes of FDA:9,9 '-
Bis- (3- amino-4-hydroxylphenyl) hexafluoropropane of HFHA:2,2- (compound comprising the structure that general formula (3) indicate)
TAPOB:1,3,5- tri- (4- amino-benzene oxygen) benzene (compound comprising the structure that general formula (13) indicate).
(solvent)
GBL: gamma-butyrolacton
PGMEA: propylene glycol monomethyl ether
DPM: dipropylene glycol monomethyl ether.
(alkali soluble resins)
Alkali soluble resins (A): make the glycidyl methacrylate of 0.4 equivalent and by methacrylic acid/metering system The carboxyl for the copolymer that sour methyl esters/styrene=54/23/23 (mole %) is formed carries out (the weight of substance obtained from addition reaction Average molecular weight (Mw): 29,000).
(other)
PE-3A: pentaerythritol triacrylate
(electroconductive particle)
A-1: the average thickness of surface carbon coating is the silver particles (Nisshin that 1nm and 1 partial size is 40nm Engineering (strain) system)
The silver particles (Mitsui Metal Co., Ltd.'s (strain) system) that A-2:1 partial size is 0.7 μm.
Production Example 1: polymer (synthesis of P-1~P-7, P-9~P-15)
It under drying nitrogen stream, is dissolved in acid dianhydride shown in table 1 in GBL, the solution that concentration is 10 mass % is made. Diamines shown in table 1 is added thereto, reacts in 20 DEG C 1 hour, is then reacted 2 hours in 50 DEG C.Polymerization after the reaction was completed The concentration of solution is 20~25 mass %.
[table 1]
(heat-resistant polymer)
P-8: polyethersulfone resin (" SUMIKAEXCEL " (registered trademark) 5003PS: Sumitomo Chemical (strain) system).
Production Example 2: the preparation of transparent composition (OP-1~OP-15)
Heat-resistant polymer 20g, GBL 70g and the surfactant (F-477:DIC recorded in addition table 2 into clean bottle (strain) system) 0.03g, stirs 1 hour, obtains transparent composition OP-1~OP-15.
[table 2]
[table 2]
Transparent composition Heat-resistant polymer
OP-1 P-1
OP-2 P-2
OP-3 P-3
OP-4 P-4
OP-5 P-5
OP-6 P-6
OP-7 P-7
OP-8 P-8
OP-9 P-9
OP-10 P-10
OP-11 P-11
OP-12 P-12
OP-13 P-13
OP-14 P-14
OP-15 P-15
Production Example 3: the preparation of conductive composition (AE-1~AE-4)
By above-mentioned electroconductive particle A-1 80g, surfactant (21116:(plants of " DISPERBYK " (registered trademark)) DIC System) 4.06g, PGMEA 98.07g and DPM 98.07g mixing implement 1200rpm, at mixing in 30 minutes using homogenizer Reason.Then, high-voltage wet type is further used to set Nanomizer (Nanomizer (strain)) without media particles makeup and carry out at dispersion Reason obtains the silver-colored dispersion liquid 1 that silver content is 28.6 mass %.
In addition, carrying out behaviour similar to the above other than replacing electroconductive particle A-1 and using electroconductive particle A-2 Make, obtains silver-colored dispersion liquid 2.
By as the alkali soluble resins of organic compound (A) 20g, as the acetoacetate aluminium ethide of metal chelate compound Diisopropyl ester (ALCH:Kawaken Fine Chemical (strain) system) 0.6g, Photoepolymerizationinitiater initiater (NCI-831:(plants) ADEKA System) 2.4g and PE-3A12.0g mixing, it adds PGMEA 132.6g and DPM 52.6g and be stirred thereto, thus obtain The organic I liquid of conductive composition.
Above-mentioned silver-colored dispersion liquid and above-mentioned organic I liquid are respectively mixed with ratio shown in table 3, electric conductivity combination is obtained Object (AE-1~AE-4).
[table 3]
[table 3] (unit is mass parts)
Electrically conductive composition AE-1 AE-2 AE-3 AE-4
Silver-colored dispersion liquid 1 1.88 2.41 0.38 -
Silver-colored dispersion liquid 2 - - - 1.88
Organic I liquid 0.71 0.10 2.43 0.71
Ag amount 83 97.7 22 83
Organic principle amount 17 2.3 78 17
In table, Ag amount and organic principle amount indicate that the silver particles and organic principle that include in conductive composition (do not include Solvent) mass ratio.
Production Example 4: the preparation of insulating properties composition (OA-1)
Added into clean bottle Cardo resin (V-259ME: Nippon Steel's Sumitomo Chemical (strain) system) 50.0g, monomer (TAIC: Japan's chemical conversion (strain) system) 18.0g, monomer (M-315: East Asia synthesizes (strain) system) 10.0g, epoxide (PG-100:Osaka Gas Chemicals (strain) system) 20.0g and initiator (OXE-01:BASF Co. Ltd. system) 0.2g, stir 1 hour, obtain Insulating properties composition OA-1.
Production Example 5: the preparation of Lightproof composition (b-1)
Insulating properties composition (OA-1) 50.0g, carbon black (" M-100 " (registration as Opacifying pigment are added into clean bottle Trade mark) Mitsubishi Chemical's (strain) system) 8.0g, is dispersed 1 hour using Ultra Apex Mill, obtains Lightproof composition (b-1).
Then, the evaluation method implemented in Examples and Comparative Examples is illustrated.
(1) fine pattern processability is evaluated
About embodiment 1~11,13,15~22 and each comparative example, on hyaline layer (OC-D), about embodiment 12, in fact Example 14 and embodiment 23 are applied, on insulating layer (OC-0), using spin coater (Mikasa (strain) make " 1H-360S (trade name) "), With 300rpm × 10 second, 500rpm × 2 second each Examples and Comparative Examples of condition spin coating used in conductive composition.It connects , using heating plate (Dainippon Screen Manufacturing (strain) makes " SCW-636 (trade name) "), in 100 DEG C To being coated with substrate prebake conditions 2 minutes of conductive composition, the prebake conditions film that film thickness is 0.9 μm is obtained.Use directional light formula Mask aligner (Canon (strain) make " PLA-501F (trade name) "), using ultrahigh pressure mercury lamp as light source, across with line and The mask of gap pattern is exposed prebake conditions film.Then, using automatic developing device, (Long pool industry (strain) makes " AD-2000 (trade name) "), with potassium hydroxide aqueous solution spray development 60 seconds of 0.045 mass %, is then rinsed 30 seconds with water, carry out figure Case processing.After exposure and imaging, by formed using 1 to 1 width 5 μm line and space pattern light exposure as optimum exposure Amount.Light exposure is measured using I line illumination photometer.Then, the minimum pattern size after the development under optimum exposure is carried out Measurement evaluates fine pattern processability according to evaluation criteria below, by 2 or more as qualification.
5: less than 3 μm
4:3 μm more than and less than 4 μm
3:4 μm more than and less than 5 μm
2:5 μm more than and less than 6 μm
1:6 μm or more.
(2) electrical conductivity evaluations of conductive composition
About embodiment 1~11,13,15~22 and each comparative example, on hyaline layer (OC-D), about embodiment 12, in fact Example 14 and embodiment 23 are applied, on insulating layer (OC-0), using the method recorded in above-mentioned (1), using each embodiment and is compared Conductive composition used in example forms the prebake conditions film that film thickness is 0.9 μm.Use directional light formula mask aligner (Canon (strain) makes " PLA-501F (trade name) "), using ultrahigh pressure mercury lamp as light source, across covering with volume resistivity evaluation pattern generating Mould is exposed prebake conditions film.Then, using automatic developing device (it is Long pool industry (strain) make " AD-2000 (trade name) "), With potassium hydroxide aqueous solution spray development 60 seconds of 0.045 mass %, is then rinsed 30 seconds with water, carry out pattern processing.Then, It uses baking oven (" IHPS-222 ";ESPEC (strain) system), it is toasted 30 minutes after implementing in air in 230 DEG C, thus obtains volume Resistivity evaluation pattern generating.
For obtained volume resistivity evaluation pattern generating, use sheet resistance measuring machine (" Loresta " (registered trademark)- FP;Mitsubishi's oiling (strain) system) measurement sheet resistance value ρ s (Ω/), it uses surface roughness form measuring instrument (" SURFCOM " (registered trademark) 1400D;(strain) Tokyo precision system) measurement film thickness t (cm), two values are multiplied, volume resistivity is thus calculated (μ Ω cm) carries out electrical conductivity evaluations according to evaluation criteria below, by 2 or more as qualification.
5: less than 60 μ Ω cm
4:60 μ Ω cm is more than and less than 80 μ Ω cm
3:80 μ Ω cm is more than and less than 100 μ Ω cm
2:100 μ Ω cm is more than and less than 150 μ Ω cm
1:150 μ Ω cm or more.
(3) the residue evaluation of conductive composition
For the unexposed portion for the substrate for being formed with the volume resistivity evaluation pattern generating obtained by the method for above-mentioned (2), Using ultraviolet-uisible spectrophotometer ((strain) Shimadzu Seisakusho Ltd. system " MultiSpec-1500 (trade name) "), front and back is formed to film 400nm at transmissivity be measured.Then, the transmission after the transmissivity before forming film is set as T0, forms film is calculated Changed when rate is set as T by the transmissivity that formula (T0-T)/T0 is indicated, evaluates residue according to evaluation criteria below.By 2 or more conducts It is qualified.
5: less than 1%
4:1% is more than and less than 2%
3:2% is more than and less than 3%
2:3% is more than and less than 4%
1:4% is more than and less than 5%.
(4) tone (b*) is evaluated
About embodiment 1~12,15~21,23 and each comparative example, for the substrate for being laminated to conductive layer (A-2), about Embodiment 13~14,22 uses spectrophotometer (CM-2600d for the substrate for being laminated to hyaline layer (OC-2);KONICA MINOLTA (strain) system), from the reflectivity of whole reflected lights of glass substrate side measurement multilayer board, measure CIE (L*, a*, b*) Color characteristics b* in color space evaluates tone according to evaluation criteria below.By 2 or more as qualification.It needs to illustrate It is, as light source, to use D65 light source.
5:-2≤b*≤2
4:-3≤b* < -2 or 2 <b*≤3
3:-4≤b* < -3 or 3 <b*≤4
2:-5≤b* < -4 or 4 <b*≤5
1:b* < -5 or 5 <b*.
(5) resistance to bend(ing) is evaluated
Only by the hyaline layer (OC- of the glass substrate with hyaline layer (OC-D) made in each Examples and Comparative Examples 1~3 D it) is cut into 1cm width, is removed from glass substrate, is respectively the metal bar of 10cm, 5cm, 3cm and 1cm using diameter, carries out 180 Cripping test is spent, then the presence or absence of crackle generation is observed using optical microscopy.In comparative example 4, PET film is cut out 1cm width is carried out similarly 180 degree cripping test, is then observed using optical microscopy the presence or absence of crackle generation.Examination Testing number is 1 time.Resistance to bend(ing) is evaluated according to evaluation criteria below.By 2 or more as qualification.
5: when diameter 1cm, flawless is generated
4: when diameter 3cm, flawless is generated, and 1cm when diameter has crackle generation
3: when diameter 5cm, flawless is generated, and when diameter 3cm, there is crackle generation
2: when diameter 10cm, flawless is generated, and when diameter 5cm, there is crackle generation
1: when diameter 10cm, there is crackle generation.
(5) humidity resistance is evaluated
For the multilayer board made by each Examples and Comparative Examples, humidity resistance is evaluated using the following method.Measurement In, it uses insulation degradation evaluating characteristics system " ETAC SIR13 " (this chemical conversion of nanmu (strain) system).Respectively in wiring layer (A-1) and cloth Electrode is installed in the terminal part of line layer (A-2), and multilayer board is put into the hot and humid groove for having been set to 85 DEG C of 85%RH conditions It is interior.By after five minutes, applying voltage between the electrode of wiring layer (A-1) and wiring layer (A-2) after ambient stable in slot, Measure the ongoing change of insulation resistance.By wiring layer (A-1) as anode, wiring layer (A-2) is used as cathode, applies 10V's Voltage, with 5 minutes 500 hours resistance values of measuring space.When the resistance value measured reaches below 10 5 powers, judgement To stop voltage and applying, using test period so far as short circuit duration because of defective insulation bring short circuit.According to following Evaluation criteria evaluate humidity resistance.By 2 or more as qualification.
5: short circuit duration is 1000 hours or more
4: short circuit duration was 500 hours more than and less than 1000 hours
3: short circuit duration was 300 hours more than and less than 500 hours
2: short circuit duration was 100 hours more than and less than 300 hours
1: short circuit duration was less than 100 hours.
(6) dimensional accuracy is evaluated
For the multilayer board made by each Examples and Comparative Examples, dimensional accuracy is evaluated using the following method.With The Box junction portion of wiring layer (A-1) and the Box junction portion of wiring layer (A-2) the Chong Die mode in the center of multilayer board into The position of row design, to the inclined of the Box junction portion of wiring layer (A-1) and the horizontal direction in the Box junction portion of wiring layer (A-2) Shifting is measured, and evaluates dimensional accuracy according to evaluation criteria below.By 2 or more as qualification.
5: offset is less than 1 μm
4: deviating as 1 μm more than and less than 2 μm
3: deviating as 2 μm more than and less than 3 μm
2: deviating as 3 μm more than and less than 5 μm
1: deviating is 5 μm or more.
(7) elongation at break is evaluated
Only by the hyaline layer (OC- of the glass substrate with hyaline layer (OC-D) made in each Examples and Comparative Examples 1~3 D it) is cut into the strip that width is 1cm, length is about 9cm, is then removed from glass substrate, measures sample as elongation at break Product.In comparative example 4, PET film is cut into the strip that width is 1cm, length is about 9cm, measures sample as elongation at break. Elongation at break measurement sample is set to (strain) ORIENTEC Tensilon RTM-100 with the initial samples length of 50mm, Tension test is carried out with 50mm/ minutes tensile speeds.Measurement carries out 12 times, by first 5 points of obtained elongation at break put down Elongation at break of the mean value as hyaline layer (OC-D) evaluates elongation at break according to evaluation criteria below.By 2 or more conducts It is qualified.
5:30% or more
4:15% is more than and less than 30%
3:5% is more than and less than 15%
2:1% is more than and less than 5%
1: less than 1%
(8) wiring shows evaluation
About embodiment 1~12,15~21,23 and each comparative example, for the substrate for being laminated to conductive layer (A-2), about Embodiment 13~14,22, for the substrate for being laminated to hyaline layer (OC-2), under green light and under fluorescent lamp, from hyaline layer (OC-D) side is visually observed wiring layer, shows according to evaluation criteria below evaluation wiring.By 2 or more as conjunction Lattice.It should be noted that using D65 light source as light source.
5: can not be identified completely under green light
4: can recognize under green light
3: can not identify completely under fluorescent light
2: can recognize under fluorescent light according to angle
1: can recognize under fluorescent light.
(embodiment 1)
<formation of hyaline layer (OC-D)>
It, will be saturating shown in table 4 with 600rpm × 10 second using spin coater (Mikasa (strain) makes " 1H-360S (trade name) ") Bright composition is spun on vertical 210mm × horizontal 297mm glass substrate, then uses heating plate (Dainippon Screen Manufacturing (strain) make " SCW-636 (trade name) "), in 100 DEG C prebake conditions 2 minutes, make prebake conditions film.Use baking Case (ESPEC (strain) makes " IHPS-222 (trade name) ") solidifies the substrate with prebake conditions film of production in 230 DEG C in air It 30 minutes, is formed hyaline layer (OC-D).
<formation of the first wiring layer (A-1)>
Using spin coater (Mikasa (strain) makes " 1H-360S (trade name) "), with 300rpm × 10 second, 500rpm × 2 second Condition, conductive composition shown in table 4 is spun on the substrate for being formed with hyaline layer, then use heating plate (Dainippon Screen Manufacturing (strain) make " SCW-636 (trade name) "), in 100 DEG C prebake conditions 2 minutes, system Make prebake conditions film.Using directional light formula mask aligner (Canon (strain) makes " PLA-501F (trade name) "), by ultrahigh pressure mercury lamp As light source, prebake conditions film is exposed across desired mask.Then, using automatic developing device (Long pool industry (strain) Make " AD-2000 (trade name) "), with potassium hydroxide aqueous solution spray development 60 seconds of 0.045 mass %, then with water rinsing 30 Second, carry out the pattern processing of prebake conditions film.
Using baking oven, the substrate processed through pattern is solidified 30 minutes in 230 DEG C in air, forms the first wiring layer (A-1)。
<formation of insulating layer (OC-1)>
Insulating properties composition shown in table 4 is spun on and is formed with the first wiring with 650rpm × 5 second using spin coater Layer (A-1) substrate on, then use heating plate, in 100 DEG C prebake conditions 2 minutes, make prebake conditions film.It is covered using directional light formula Mould aligner is exposed prebake conditions film across desired mask using ultrahigh pressure mercury lamp as light source.Then, using automatic Developing apparatus was then rinsed 30 seconds with water with potassium hydroxide aqueous solution spray development 60 seconds of 0.045 mass %, and was carried out pattern Processing.
Using baking oven, the substrate processed through pattern is solidified 60 minutes in 230 DEG C in air, insulating layer is formed, obtains Multilayer board.
<the second wiring layer (A-2)>
Using conductive composition shown in table 4, operated in the same way with above-mentioned<formation of the first wiring layer (A-1)>, The second wiring layer (A-2) is formed on above-mentioned insulating layer.
The result evaluated using method above-mentioned is shown in table 4.Fine pattern processability, electric conductivity, tone, resistance to bend(ing) And dimensional accuracy is " 5 ", well.The residue and humidity resistance of conductive composition are " 4 ", but are the model that can be used out of questionly It encloses.Elongation at break is " 2 ", but is the range that can be used out of questionly.
(embodiment 2)
In addition to by transparent composition and solidification temperature, film thickness such as recorded in table 4 as change other than, carry out with it is real Example 1 is applied similarly to operate.Since solidification temperature is low, electric conductivity is slightly reduced, and is " 4 ", but can use out of questionly Range.
(embodiment 3)
In addition to by transparent composition and solidification temperature, film thickness such as recorded in table 4 as change other than, carry out with it is real Example 1 is applied similarly to operate.Due to solidification temperature height, tone is slightly reduced, and is " 4 ", but the model can to use out of questionly It encloses.
(embodiment 4)
Other than changing transparent composition as table 4 is recorded, operation similarly to Example 1 is carried out. Evaluation result does not change.
(embodiment 5)
Other than changing transparent composition as table 4 is recorded, operation similarly to Example 1 is carried out. Since the ratio of the structure of general formula (1) expression in heat-resistant polymer is small, heat resistance is slightly reduced, and tone reduces, but being can The range used.Due to having imported the structure of general formula (12) expression in heat-resistant polymer, elongation at break is improved.
(embodiment 6)
Other than changing transparent composition as table 4 is recorded, operation similarly to Example 1 is carried out. Since the ratio of the structure of general formula (2) expression in heat-resistant polymer is small, heat resistance is slightly reduced, and tone reduces, but being can The range used.
(embodiment 7)
Other than changing transparent composition as table 4 is recorded, operation similarly to Example 1 is carried out. Since the ratio of the structure of general formula (2) expression in heat-resistant polymer is small and the ratio of aromatic ring is small, heat resistance drop Low, tone reduces.It in addition, generating conductive composition residue, but is workable range.
(embodiment 8)
Other than changing transparent composition as table 4 is recorded, operation similarly to Example 1 is carried out. Polyether sulfone has been used due to replacing polyimides, thus fine pattern processability and tone reduce, but are workable model It encloses.
(embodiment 9)
Other than changing conductive composition as table 4 is recorded, behaviour similarly to Example 1 is carried out Make.Since the amount of the organic compound in conductive composition is few, fine pattern processability is reduced, and generates residue. It in addition, resistance to bend(ing) also reduces, but is workable range.
(embodiment 10)
Other than changing conductive composition as table 4 is recorded, behaviour similarly to Example 1 is carried out Make.Since the amount of the organic compound in conductive composition is more, electric conductivity is reduced, but is workable range.
(embodiment 11)
Other than changing conductive composition as table 4 is recorded, behaviour similarly to Example 1 is carried out Make.Due to not being coated with metal particle, fine pattern processability, electric conductivity, humidity resistance are reduced, and generate residue, Wiring shows, but is workable range.
(embodiment 12)
Other than forming insulating layer (OC-0) on hyaline layer (OC-D) as recording in table 5, carry out and embodiment 1 Same operation.By insulating layer (OC-0) residue of conductive composition is improved, but tone slightly reduces.For Use the upper range that there is no problem.
(embodiment 13)
Other than forming insulating layer (OC-2) on wiring layer (A-2) as recording in table 5, carry out and embodiment 1 Same operation.The formation of insulating layer (OC-2) and the formation of insulating layer (OC-1) are carried out similarly.Pass through insulating layer (OC-2) And humidity resistance is improved, but tone slightly reduces.To use the range that there is no problem.
(embodiment 14)
In addition to insulating layer (OC-0), the shape on wiring layer (A-2) are formed on hyaline layer (OC-D) as recording in table 5 Other than insulating layer (OC-2), operation similarly to Example 1 is carried out.Make conductive composition by insulating layer (OC-0) Residue be improved, by insulating layer (OC-2) humidity resistance is improved, but tone slightly reduces.Do not have to use The range of problem.
(embodiment 15)
In addition to by solidification temperature such as in table 5 record as change other than, carry out operation similarly to Example 1. Since solidification temperature is low, electric conductivity, humidity resistance are reduced, and are " 2 ", but be workable range.
(embodiment 16)
In addition to by solidification temperature such as in table 5 record as change other than, carry out operation similarly to Example 1. Due to solidification temperature height, tone, bendability, wiring show reduction, respectively " 2 ", " 3 ", " 2 ", but are workable Range.
(embodiment 17)
In addition to by transparent composition such as in table 5 record as change other than, carry out behaviour similarly to Example 1 Make.Due to having imported the structure of general formula (12) expression in heat-resistant polymer, elongation at break is improved.
(embodiment 18)
In addition to by transparent composition such as in table 5 record as change other than, carry out behaviour similarly to Example 1 Make.Due to heat-resistant polymer formula of (12) indicate structure ratio compared with embodiment 17 increase, elongation at break into One step improves.
(embodiment 19)
In addition to by transparent composition such as in table 5 record as change other than, carry out behaviour similarly to Example 1 Make.Due to having imported the structure of structural formula (13) expression in heat-resistant polymer, elongation at break is improved.
(embodiment 20)
In addition to by transparent composition such as in table 5 record as change other than, carry out behaviour similarly to Example 1 Make.Since the ratio for the structure that structural formula (13) indicates in heat-resistant polymer increases compared with embodiment 17, tone is reduced.
(embodiment 21)
Other than forming light shield layer (B-1) on hyaline layer (OC-D) as recording in table 5, carry out and embodiment 1 Same operation.By light shield layer (B-1) wiring observed from the side hyaline layer (OC-D) is shown to be mitigated.It needs Illustrate, the forming method of light shield layer (B-1) is recorded in hereafter.
<formation of light shield layer (B-1)>
Using spin coater, with 750rpm × 10 second spin coating Lightproof composition (b-1), then, using heating plate in 100 DEG C Prebake conditions 2 minutes, make prebake conditions film.Using directional light formula mask aligner, using ultrahigh pressure mercury lamp as light source, across expectation Mask, prebake conditions film is exposed.Then, using automatic developing device, with the potassium hydroxide aqueous solution of 0.045 mass % Spray development 60 seconds, is then rinsed 30 seconds with water, carries out pattern processing.
Using baking oven, in air in 230 DEG C, the substrate processed through pattern is solidified 60 minutes, forms light shield layer (B- 1)。
(embodiment 22)
Other than light shield layer (B-1) is formed on second insulating layer (OC-2) as being recorded in table 5, carry out and real Example 21 is applied similarly to operate.By light shield layer (B-1) wiring observed from the side second insulating layer (OC-2) is shown To mitigate.
(embodiment 23)
In addition to utilizing the SiO for sputtering on hyaline layer (OC-D) and being formed with a thickness of 30nm as recording in table 52Film with Outside, operation similarly to Example 1 is carried out.Pass through SiO2Film and the residue of conductive composition is improved, tone Do not change.
(comparative example 1)
In addition to by heat-resistant polymer such as in table 5 record as change other than, carry out behaviour similarly to Example 1 Make.It is fine pattern processability, residual due to any one of the structure that heat-resistant polymer is indicated without general formula (1) or (2) Slag, tone and humidity resistance are greatly reduced, for the level not being available.
(comparative example 2)
In addition to by heat-resistant polymer such as in table 5 record as change other than, carry out behaviour similarly to Example 1 Make.Since heat-resistant polymer is free of the structure that general formula (2) indicate, fine pattern processability, residue, tone and humidity resistance It is greatly reduced, for the level not being available.
(comparative example 3)
In addition to by heat-resistant polymer such as in table 5 record as change other than, carry out behaviour similarly to Example 1 Make.Since heat-resistant polymer is free of the structure that general formula (1) indicates, fine pattern processability, residue, tone and humidity resistance It is greatly reduced, for the level not being available.
(comparative example 4)
In addition to replacing the glass substrate for being coated with hyaline layer (OC-D) and using film thickness to be 50 μm of PET film Other than (" Lumirror " (registered trademark): eastern beautiful (strain) system), operation similarly to Example 1 is carried out.It is heat-resisting due to PET film Property is low, therefore fine pattern processability, residue, tone and humidity resistance are greatly reduced, for the level not being available.In addition, by In the deformation of film, so that the positional shift of pattern occur, dimensional accuracy is also greatly reduced, for the level not being available.
By each Examples and Comparative Examples evaluation result is shown in table 4~5.
[table 4]
[table 5]
Industrial availability
Touch panel of the invention may be not only suitable for previous flat-panel monitor, and be readily applicable to Flexible Displays Device.

Claims (23)

1. touch panel, for comprising being sequentially laminated with hyaline layer (OC-D), the first wiring layer (A-1), the first insulating layer (OC- 1) and the touch panel at the position of the second wiring layer (A-2), the hyaline layer (OC-D) is contained and to be indicated comprising the following general formula (1) The heat-resistant polymer for the structure that structure and the following general formula (2) indicate,
[chemical formula 1]
In the general formula (1) and the general formula (2), R1And R2Each independently represent monovalent organic group;M and n are each independently Indicate 0~4 integer;M R1And n R2Respectively it can be the same or different.
2. touch panel as described in claim 1, wherein the heat-resistant polymer also includes the knot that the following general formula (12) indicate Structure,
[chemical formula 2]
In the general formula (12), R7And R8Each independently represent fluorine atom or the group containing fluorine atom;X and y are each independently Indicate 1~4 integer;X R8And y R7Respectively it can be the same or different.
3. touch panel as claimed in claim 1 or 2, wherein the heat-resistant polymer also includes following structural formula (13) table The structure shown,
[chemical formula 3]
4. touch panel according to any one of claims 1 to 3, wherein first wiring layer (A-1) and/or described It is 0.1~9 μm of eyed structure that second wiring layer (A-2), which has line width,.
5. touch panel as described in any one of claims 1 to 4, wherein first wiring layer (A-1) and/or described Second wiring layer (A-2) contains the electroconductive particle with surface coating.
6. touch panel according to any one of claims 1 to 3, wherein first wiring layer (A-1) and/or described Second wiring layer (A-2) is transparent electrode.
7. such as touch panel according to any one of claims 1 to 6, also in the upper surface of second wiring layer (A-2) Configured with second insulating layer (OC-2).
8. touch panel as claimed in claim 7, wherein the second insulating layer (OC-2) has photonasty and adhesiveness.
9. touch panel as claimed in claim 7, also in the upper surface of the second insulating layer (OC-2) configured with photosensitive Property adhesive layer (OC-R).
10. such as touch panel according to any one of claims 1 to 9, also at the hyaline layer (OC-D) and described first Insulating layer (OC-0) is configured between wiring layer (A-1).
11. such as touch panel according to any one of claims 1 to 10, also in the lower part of first wiring layer (A-1) And the lower part of second wiring layer (A-2) and/or the top of first wiring layer (A-1) and second wiring The top of layer (A-2) is configured with light shield layer.
12. the touch panel as described in any one of claim 1~11, wherein the heat-resistant polymer is selected from by polyamides In the group that imines, Polyimidesiloxane, polyether sulfone, polybenzoxazoles, aromatic polyamides, epoxy resin and sulfonamide form It is at least one.
13. touch panel as claimed in claim 12, wherein the heat-resistant polymer is selected from sub- by polyimides, polyamides At least one of the group of oxyalkylene amine and polybenzoxazoles composition.
14. the touch panel as described in any one of claim 1~13, wherein first wiring layer (A-1) and/or institute State organic compound of the second wiring layer (A-2) containing 0.1~80 mass %.
15. the touch panel as described in any one of claim 1~14, wherein first wiring layer (A-1) and/or institute Stating the second wiring layer (A-2) includes silver particles.
16. the touch panel as described in any one of claim 1~15, with a thickness of 1~40 μm.
17. the touch panel as described in any one of claim 1~16 is based on being advised by International Commission on Illumination in 1976 years The value of the b* of fixed L*a*b* colour system is -5~5.
18. the manufacturing method of touch panel comprising following processes:
At least sequentially formed on temporary support body hyaline layer (OC-D), the first wiring layer (A-1), the first insulating layer (OC-1) and Second wiring layer (A-2) and the process for making transfer member;
Via transparent adhesive layer, by the transfer member and temporary support body in opposite side face paste together in substrate process; And
The process for removing temporary support body,
Wherein, the hyaline layer (OC-D) has the function of removing, and containing the structure that indicates comprising the following general formula (1) and following leads to The polymer for the structure that formula (2) indicates,
[chemical formula 4]
In the general formula (1) and the general formula (2), R1And R2Each independently represent monovalent organic group;M and n are each independently Indicate 0~4 integer;M R1And n R2Respectively it can be the same or different.
19. the manufacturing method of touch panel described in any one of claim 1~17 comprising following processes:
At least sequentially formed on temporary support body hyaline layer (OC-D), the first wiring layer (A-1), the first insulating layer (OC-1) and Second wiring layer (A-2) and the process for making transfer member;
Via transparent adhesive layer, by the transfer member and temporary support body in opposite side face paste together in substrate process; And
The process for removing temporary support body,
Wherein, the hyaline layer (OC-D) has the function of removing, and containing the structure that indicates comprising the following general formula (1) and following leads to The polymer for the structure that formula (2) indicates,
[chemical formula 5]
In the general formula (1) and the general formula (2), R1And R2Each independently represent monovalent organic group;M and n are each independently Indicate 0~4 integer;M R1And n R2Respectively it can be the same or different.
20. the manufacturing method of the touch panel as described in claim 18 or 19, wherein the substrate is glass substrate or film base Plate.
21. the manufacturing method of touch panel as claimed in claim 20, wherein the substrate is the glass with OLED element Substrate.
22. the manufacturing method of the touch panel as described in any one of claim 19~21, wherein form the hyaline layer (OC-D) process is included in 150~350 DEG C of processes heated.
23. structural body is the structural body with the position for being laminated with the first wiring layer (A-1) on hyaline layer (OC-D), institute State the resistance to thermal polymerization that hyaline layer (OC-D) contains the structure of the structure and the following general formula (2) expression that indicate with the following general formula (1) Object,
[chemical formula 6]
In the general formula (1) and the general formula (2), R1And R2Each independently represent monovalent organic group;M and n are each independently Indicate 0~4 integer;M R1And n R2Respectively it can be the same or different.
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