CN109888075A - A kind of micro-led chip - Google Patents
A kind of micro-led chip Download PDFInfo
- Publication number
- CN109888075A CN109888075A CN201910055993.5A CN201910055993A CN109888075A CN 109888075 A CN109888075 A CN 109888075A CN 201910055993 A CN201910055993 A CN 201910055993A CN 109888075 A CN109888075 A CN 109888075A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- nitride layer
- micro
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a kind of micro-led chips, including N-shaped nitride layer, active layer, p-type nitride layer, and the n-type electrode layer and p-type electrode layer that are electrically connected respectively with N-shaped nitride layer and p-type nitride layer；Wherein: for the active layer between the N-shaped nitride layer and the p-type nitride layer, the p-type electrode layer includes p-type current-diffusion layer and p-type electrode pad layer, and the p-type current-diffusion layer is covered in the surface of the p-type nitride layer.The present invention has the advantages that reducing current spread compared with traditional light-emitting diode chip for backlight unit, have the advantages that realize that the light efficiency of micro-led chip increases.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of micro-led chips.
Background technique
A kind of solid-state lighting elements of the light emitting diode (LED) as high photosynthetic efficiency, high reliability have been widely used in each
Class illumination and display field, occupy the very big market share.The structure of conventional light-emitting diode chip for backlight unit is mainly logical at present
Cross N-shaped nitride layer, active layer and p-type nitride layer that epitaxial manufacture process is sequentially prepared, and the N-shaped prepared by chip processing procedure
Electrode layer and p-type electrode layer are formed.Wherein n-type electrode layer and p-type electrode layer respectively with N-shaped nitride layer and p-type nitride
Layer is electrically connected, and the electric current of additional injection is transferred into the hair that diode is realized in active layer by electrode layer and nitride layer
Light.Due to the thickness of p-type nitride layer thin (about 5 the percent of N-shaped nitride layer) and low (the about N-shaped nitride of conductivity
The one thousandth of layer), it is very poor in the lateral diffusion-capability of p-type nitride layer to lead to additional Injection Current, so that Injection Current exists
The size of cross direction profiles and p-type electrode layer blanket p-type nitride layer in active layer has relevance.For existing big
In the conventional LED chip of 100 μm of x100 μ m in size, if improving the area of p-type electrode layer blanket p-type nitride layer,
The electric current of injection will be distributed in active layer more evenly to be made current density decline average in active layer, may be implemented higher
Luminous efficiency, the reason is that the current density of iii-nitride light emitting devices chip routine work is 20 ~ 40 A/cm at present2, it is greater than
There is turning point (about 1 ~ 10 A/cm of efficiency decline in iii-nitride light emitting devices chip at present2), i.e., when current density increases to
When to a certain degree, the phenomenon that luminous efficiency of light-emitting diode chip for backlight unit declines with the increase of current density (Efficiency
Droop), thus conventional LED chip (size of chip is greater than 100 μm x100 μm, i.e. the projected area of chip surface
Greater than 10000 μm2) in routine work current density (20 ~ 40 A/cm2) under, allow current distribution that can more evenly reduce luminous two
The current density of pole pipe chip keeps the luminous efficiency of light-emitting diode chip for backlight unit more preferable, therefore in the prior art, conventional light-emitting diodes
The area of the p-type electrode layer blanket p-type nitride layer of the tube chip and ratio of p-type nitride layer area is all very high (is greater than
0.9).
Next application trend of light-emitting diode chip for backlight unit is micro-led chip (Micro LED), i.e., by LED
Surface projection's area miniatureization of chip to less than 10000 μm2, to occupy indoor tv, mobile phone is shown, wearable device etc. is aobvious
Show application scenarios.In Micro LED display, due to the huge number of chip, while the area of chip is relative to display screen
Accounting it is big, so that minimum injected current density, which is used only, can be thus achieved enough brightness of display screen, therefore miniature shine
The injected current density of diode is less than 1 A/cm2.Under this situation, micro-led working current density is lower than
The turning point of highest luminous efficiency declines current density if improving the area of p-type electrode layer blanket p-type nitride layer at this time,
The luminous efficiency that will cause light-emitting diode chip for backlight unit instead reduces.
Based on the above reasons, the electrode layer of micro-led chip is designed and is needed and conventional at present luminous two
Pole pipe chip is different.
Summary of the invention
The object of the present invention is to provide a kind of micro-led chips, are redesigned for electrode layer,
Electrode layer is reduced to the area coverage of nitride layer, to realize the high-luminous-efficiency of micro-led chip.
In order to achieve the object, the invention provides the following technical scheme: a kind of micro-led chip, including N-shaped
Nitride layer, active layer, p-type nitride layer, and the N-shaped being electrically connected respectively with N-shaped nitride layer and p-type nitride layer
Electrode layer and p-type electrode layer；Wherein: the active layer is between the N-shaped nitride layer and the p-type nitride layer, institute
Stating p-type electrode layer includes p-type current-diffusion layer and p-type electrode pad layer, and the p-type current-diffusion layer is covered in the p-type nitrogen
The surface of compound layer, the p-type current-diffusion layer cover the area a1 of the p-type nitride layer, with the p-type nitride layer
Top surface area a2 meets relational expression a1/a2≤0.7.
Preferably, surface projection's area of the micro-led chip is less than 10000 μm2。
Preferably, the group of the N-shaped nitride layer is divided into InaAlbGa1-a-bN, wherein 0≤a≤0.5,0≤b≤1,0≤a
+ b≤1, with a thickness of 0.5 ~ 5 μm, the Si doping concentration of N-shaped is 1E18 ~ 1E22cm-3。
Preferably, the active layer is the multi-quantum pit structure for being alternately stacked by several well layer and barrier layer and being formed, institute
Several are stated as the positive integer more than or equal to 1, the group of the well layer is divided into IncAldGa1-c-dN, wherein 0≤c≤0.6,0≤d
≤ 0.6,0≤c+d≤1, with a thickness of 1 ~ 10nm, the group of the barrier layer is divided into IneAlfGa1-e-fN, wherein 0≤e≤0.5,0≤f
≤ 1,0≤e+f≤1, with a thickness of 3 ~ 20nm.
Preferably, the group of the p-type nitride layer is divided into IngAlhGa1-g-hN, wherein 0≤g≤0.5,0≤h≤1,0≤g
+ h≤1, with a thickness of 10 ~ 300nm, the Mg doping concentration of p-type is 1E18 ~ 1E22cm-3。
Preferably, the n-type electrode layer is by nickel (Ni), gold (Au), platinum (Pt), aluminium (Al), titanium (Ti), chromium (Cr), palladium
(Pd), one of cobalt (Co), copper (Cu) or a variety of any combination, with a thickness of 0.5 ~ 5 μm.
Preferably, the p-type current-diffusion layer by nickel (Ni), golden (Au), platinum (Pt), aluminium (Al), titanium (Ti), chromium (Cr),
Palladium (Pd), cobalt (Co), copper (Cu) and one of tin indium oxide (ITO) and zinc-gallium oxide (GZO) or a variety of any group
It closes, with a thickness of 5 ~ 500nm.
Preferably, the p-type electrode pad layer by nickel (Ni), golden (Au), platinum (Pt), aluminium (Al), titanium (Ti), chromium (Cr),
One of palladium (Pd), cobalt (Co), copper (Cu) or a variety of any combination, with a thickness of 0.5 ~ 5 μm.
Further, the p-type current-diffusion layer covers the area a1 of the p-type nitride layer, with the p-type nitride
The top surface area a2 of layer, meets relational expression a1/a2≤0.5.
Further, the p-type current-diffusion layer covers the area a1 of the p-type nitride layer, with the p-type nitride
The top surface area a2 of layer, meets relational expression a1/a2≤0.3.
Compared with prior art, the present invention provides a kind of micro-led chips, have following the utility model has the advantages that will
Ratio of the area of p-type current-diffusion layer blanket p-type nitride layer relative to the area of p-type nitride layer, is set to≤0.7
Compared with low water-mark.Compared with traditional light-emitting diode chip for backlight unit, reduce current spread, has and realize micro-led chip
Light efficiency increase the advantages of.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the micro-led chip of the embodiment of the present invention.
Fig. 2 is the preparation flow schematic diagram of the micro-led chip of the embodiment of the present invention.
Appended drawing reference:
Substrate 100, N-shaped nitride layer 200, active layer 300, p-type nitride layer 400, n-type electrode layer 500, p-type electrode layer
600, well layer 310, barrier layer 320, p-type current-diffusion layer 610, p-type electrode pad layer 620.
The top surface area a2 of the area a1 of p-type current-diffusion layer blanket p-type nitride layer, p-type nitride layer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1, as shown in Figure 1, a kind of micro-led chip, successively include N-shaped nitride layer 200, active
Layer 300, p-type nitride layer 400, and the N-shaped being electrically connected respectively with N-shaped nitride layer 200 and p-type nitride layer 400
Electrode layer 500 and p-type electrode layer 600, in which: the p-type electrode layer 600 successively includes p-type current-diffusion layer 610 and p-type electricity
Pole soldering pad layer 620, the p-type current-diffusion layer 610 are covered in the surface of p-type nitride layer 400, the p-type current-diffusion layer
The area a1 of the 610 covering p-type nitride layers 400, the top surface area a2 with the p-type nitride layer 400, relational expression meet
a1/a2≤0.7。
Specifically, the micro-led chip be in rectangle, the length of the rectangle and it is wide be respectively 50 μm and 20 μm,
Surface projection's area is 1000 μm2；The group of the N-shaped nitride layer 200 is divided into InaAlbGa1-a-bN, wherein 0≤a≤0.5,0≤
B≤1,0≤a+b≤1, with a thickness of 0.5 ~ 5 μm, the Si doping concentration of N-shaped is 1E18 ~ 1E22cm-3；The active layer 300 be by
Several well layer 310 and barrier layer 320 are alternately stacked and the multi-quantum pit structure that is formed, and described several are more than or equal to 1
The group of positive integer, the well layer 310 is divided into IncAldGa1-c-dN, wherein 0≤c≤0.6,0≤d≤0.6,0≤c+d≤1, thickness
Group for 1 ~ 10nm, the barrier layer 320 is divided into IneAlfGa1-e-fN, wherein 0≤e≤0.5,0≤f≤1,0≤e+f≤1, thickness
For 3 ~ 20nm；The group of the p-type nitride layer 400 is divided into IngAlhGa1-g-hN, wherein 0≤g≤0.5,0≤h≤1,0≤g+h
≤ 1, with a thickness of 10 ~ 300nm, the Mg doping concentration of p-type is 1E18 ~ 1E22cm-3；The n-type electrode layer 500 is by nickel (Ni), gold
(Au), one of platinum (Pt), aluminium (Al), titanium (Ti), chromium (Cr), palladium (Pd), cobalt (Co), copper (Cu) or a variety of any group
It closes, with a thickness of 0.5 ~ 5 μm；The p-type current-diffusion layer 610 is by nickel (Ni), gold (Au), platinum (Pt), aluminium (Al), titanium (Ti), chromium
(Cr), palladium (Pd), cobalt (Co), copper (Cu) and one of tin indium oxide (ITO) and zinc-gallium oxide (GZO) or a variety of timess
Meaning combination, with a thickness of 5 ~ 500nm；The p-type electrode pad layer 620 is by nickel (Ni), gold (Au), platinum (Pt), aluminium (Al), titanium
(Ti), one of chromium (Cr), palladium (Pd), cobalt (Co), copper (Cu) or a variety of any combination, with a thickness of 0.5 ~ 5 μm.
The production process of micro-led chip shown in FIG. 1 is briefly described in the present invention, miniature to illustrate
The structure of light-emitting diode chip for backlight unit, as shown in Fig. 2, specific preparation flow is as follows:
Step S1:
(1) Sapphire Substrate 100 is provided, Sapphire Substrate 100 is put into cleaning machine and successively carries out pickling and deionization
Water rinses, and finally reuses hot nitrogen drying；
(2) Sapphire Substrate 100 is put into metal-organic chemical vapor deposition equipment board (MOCVD), controls the reaction of MOCVD
Cavity pressure is 100~600torr, and temperature is 1000~1200oC, and it is passed through quantitative nitrogen, hydrogen, ammonia, silane and front three
Base gallium gas, growth thickness are 3 μm, and group is divided into the N-shaped nitride layer 200 of GaN, and wherein the Si doping concentration of N-shaped is 1E19cm-3；
(3) the reaction cavity pressure for adjusting MOCVD is 200torr, and temperature is 800~1000oC, and it is passed through quantitative nitrogen, hydrogen
Gas, ammonia, silane, the well layer 310 and barrier layer 320 in 5 periods of trimethyl indium and triethyl-gallium gas growth, wherein well layer 310
Thickness and component be respectively 3nm and In0.14Ga0.86N, the thickness of barrier layer 320 and component are respectively 12nm and GaN；
(4) change the reaction cavity pressure of MOCVD to 500torr, temperature is 800~1000oC, and it is passed through quantitative nitrogen, hydrogen
Gas, ammonia, two luxuriant magnesium and trimethyl gallium gas, growth thickness 60nm, group are divided into the p-type nitride layer 400 of GaN, wherein p-type
Mg doping concentration be 5E19 cm-3, complete the epitaxial growth of wafer.
Step S2:
(5) take out wafer from MOCVD, and by gluing, exposure, the chips processing procedure such as development, etch, remove photoresist, in wafer
On according to chip layout designs, etch the groove of chip chamber, and etching exposes N-shaped nitride layer 200, wherein chip
Size be 50 μm x20 μm of rectangle;
(6) it again passes by gluing, the chips processing procedure such as exposure, development, ITO are deposited, removed photoresist, is prepared in p-type nitride layer 400 thick
Degree is 60nm, and group is divided into the p-type current-diffusion layer 610 of tin indium oxide (ITO), wherein 610 blanket p-type nitrogen of p-type current-diffusion layer
The area a1 of compound layer 400, the top surface area a2 with p-type nitride layer 400, relational expression are a1/a2=0.5;
(7) again pass by that gluing, exposure, development, metal deposit, the chips processing procedure such as remove photoresist, respectively on N-shaped nitride layer 200
N-type electrode layer 500 is prepared, and prepares p-type electrode pad layer 620, the n-type electrode layer on p-type current-diffusion layer 610
500 and the component and thickness of p-type electrode pad layer 620 be all Ni/Al/Cr/Ni/Au and 1nm/150nm/50nm/20nm/
1500nm；
Step S3:
(8) wafer is placed on bearing substrate, and is served as a contrast in laser lift-off board using laser ablation removing removal sapphire
The preparation of micro-led chip is completed at bottom 100.
Ratio of the present invention by the area of p-type current-diffusion layer blanket p-type nitride layer relative to the area of p-type nitride layer
Value, being set to≤0.7 relatively low water-mark reduces current spread compared with traditional light-emitting diode chip for backlight unit, has realization micro-
The advantages of light efficiency of type light-emitting diode chip for backlight unit increases.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of micro-led chip, including N-shaped nitride layer, active layer, p-type nitride layer, and respectively with N-shaped
The n-type electrode layer and p-type electrode layer that nitride layer and p-type nitride layer are electrically connected；It is characterized by: the active layer position
Between the N-shaped nitride layer and the p-type nitride layer, the p-type electrode layer includes p-type current-diffusion layer and p-type electricity
Pole soldering pad layer, the p-type current-diffusion layer are covered in the surface of the p-type nitride layer, and the p-type current-diffusion layer covers institute
The area a1 for stating p-type nitride layer, the top surface area a2 with the p-type nitride layer, meets relational expression a1/a2≤0.7.
2. a kind of micro-led chip according to claim 1, it is characterised in that: described micro-led
Surface projection's area of chip is less than 10000 μm2。
3. a kind of micro-led chip according to claim 1, it is characterised in that: the N-shaped nitride layer
Group is divided into InaAlbGa1-a-bN, wherein 0≤a≤0.5,0≤b≤1,0≤a+b≤1, with a thickness of 0.5 ~ 5 μm, the Si of N-shaped is adulterated
Concentration is 1E18 ~ 1E22cm-3。
4. a kind of micro-led chip according to claim 1, it is characterised in that: the active layer is by several
A well layer and barrier layer are alternately stacked and the multi-quantum pit structure that is formed, and described several are the positive integer more than or equal to 1, described
The group of well layer is divided into IncAldGa1-c-dN, wherein 0≤c≤0.6,0≤d≤0.6,0≤c+d≤1 is described with a thickness of 1 ~ 10nm
The group of barrier layer is divided into IneAlfGa1-e-fN, wherein 0≤e≤0.5,0≤f≤1,0≤e+f≤1, with a thickness of 3 ~ 20nm.
5. a kind of micro-led chip according to claim 1, it is characterised in that: the p-type nitride layer
Group is divided into IngAlhGa1-g-hN, wherein 0≤g≤0.5,0≤h≤1,0≤g+h≤1, with a thickness of 10 ~ 300nm, the Mg of p-type is adulterated
Concentration is 1E18 ~ 1E22cm-3。
6. a kind of micro-led chip according to claim 1, it is characterised in that: the n-type electrode layer is by nickel
(Ni), one of golden (Au), platinum (Pt), aluminium (Al), titanium (Ti), chromium (Cr), palladium (Pd), cobalt (Co), copper (Cu) or a variety of
Any combination, with a thickness of 0.5 ~ 5 μm.
7. a kind of micro-led chip according to claim 1, it is characterised in that: the p-type current-diffusion layer
By nickel (Ni), golden (Au), platinum (Pt), aluminium (Al), titanium (Ti), chromium (Cr), palladium (Pd), cobalt (Co), copper (Cu) and tin indium oxide
(ITO) and one of zinc-gallium oxide (GZO) or a variety of any combination, with a thickness of 5 ~ 500nm.
8. a kind of micro-led chip according to claim 1, it is characterised in that: the p-type electrode pad layer
By one of nickel (Ni), golden (Au), platinum (Pt), aluminium (Al), titanium (Ti), chromium (Cr), palladium (Pd), cobalt (Co), copper (Cu) or more
Any combination of kind, with a thickness of 0.5 ~ 5 μm.
9. a kind of micro-led chip according to claim 1, it is characterised in that: the p-type current-diffusion layer
The area a1 for covering the p-type nitride layer, the top surface area a2 with the p-type nitride layer, meet relational expression a1/a2≤
0.5。
10. a kind of micro-led chip according to claim 1, it is characterised in that: the p-type current-diffusion layer
The area a1 for covering the p-type nitride layer, the top surface area a2 with the p-type nitride layer, meet relational expression a1/a2≤
0.3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910055993.5A CN109888075A (en) | 2019-01-22 | 2019-01-22 | A kind of micro-led chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910055993.5A CN109888075A (en) | 2019-01-22 | 2019-01-22 | A kind of micro-led chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109888075A true CN109888075A (en) | 2019-06-14 |
Family
ID=66926445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910055993.5A Pending CN109888075A (en) | 2019-01-22 | 2019-01-22 | A kind of micro-led chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109888075A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020158572A1 (en) * | 2001-03-28 | 2002-10-31 | Chen Shi Ming | Light emitting diode |
| JP2009158550A (en) * | 2007-12-25 | 2009-07-16 | Sony Corp | Semiconductor light emitting element and display using the same |
| US20190019928A1 (en) * | 2017-07-11 | 2019-01-17 | PlayNitride Inc. | Micro light-emitting device and display apparatus |
-
2019
- 2019-01-22 CN CN201910055993.5A patent/CN109888075A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020158572A1 (en) * | 2001-03-28 | 2002-10-31 | Chen Shi Ming | Light emitting diode |
| JP2009158550A (en) * | 2007-12-25 | 2009-07-16 | Sony Corp | Semiconductor light emitting element and display using the same |
| US20190019928A1 (en) * | 2017-07-11 | 2019-01-17 | PlayNitride Inc. | Micro light-emitting device and display apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100394621C (en) | Gallium nitride based LED chip and its manufacturing method | |
| KR101064006B1 (en) | Light emitting element | |
| CN102270633B (en) | High-power flip-chip array LED chip and manufacturing method thereof | |
| DE112006001919T5 (en) | Blue LED with roughened surface layer with high refractive index for high light extraction | |
| US20060033120A1 (en) | Gallium nitride based light emitting device and the fabricating method for the same | |
| US20230253528A1 (en) | Solid state lighting devices with improved current spreading and light extraction and associated methods | |
| CN104285307B (en) | Efficient LED and manufacture method thereof | |
| CN101853903A (en) | Method for preparing gallium nitride-based light emitting diode with vertical structure | |
| CN104157765A (en) | Semiconductor luminescent device and manufacturing method thereof | |
| CN102244087A (en) | Controllable power flip array light emitting diode (LED) chip and manufacturing method thereof | |
| CN102751415B (en) | There is luminescent device and the manufacture method thereof of vertical stratification | |
| US20160365496A1 (en) | Light-emitting device | |
| KR20100106728A (en) | Light emitting device and method for fabricating the same | |
| CN103489981A (en) | Light emitting diode and method for manufacturing the same | |
| KR20100122998A (en) | Light emitting device and method for fabricating the same | |
| CN106463596A (en) | Method of forming a light-emitting device | |
| KR20120030430A (en) | Light emitting semiconductor device and method for manufacturing | |
| KR101239852B1 (en) | GaN compound semiconductor light emitting element | |
| CN109888075A (en) | A kind of micro-led chip | |
| US20120104413A1 (en) | Light emitting semiconductor device and method for manufacturing | |
| CN109830585A (en) | A kind of light-emitting diode chip for backlight unit with high reflectance electrode | |
| CN102569583B (en) | Based on luminescent device and the manufacture method thereof of ceramic substrate | |
| CN102169944B (en) | Light-emitting diode of Ag/ITO/zinc oxide base composite transparent electrode and preparation method thereof | |
| CN102132427A (en) | Light emitting device, and manufacturing method thereof | |
| CN101621098B (en) | Photoelectronic device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190614 |
|
| WD01 | Invention patent application deemed withdrawn after publication |