CN109887983A - The preparation method of substrate, display panel and substrate - Google Patents
The preparation method of substrate, display panel and substrate Download PDFInfo
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- CN109887983A CN109887983A CN201910214288.5A CN201910214288A CN109887983A CN 109887983 A CN109887983 A CN 109887983A CN 201910214288 A CN201910214288 A CN 201910214288A CN 109887983 A CN109887983 A CN 109887983A
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Abstract
The present invention provides the preparation method of a kind of substrate, display panel and substrate, belong to field of display technology, the edge part of its lead that can solve existing substrate by the etching of the etching liquid of other functional layers, so as to cause substrate a variety of bad phenomenons insufficient problem.Substrate of the invention, comprising: substrate, the more leads in substrate, the middle layer above lead, the first electrode above middle layer；Lead includes first material layer and second material layer；Middle layer has via hole, and orthographic projection and lead orthographic projection on substrate of the via hole in substrate partly overlaps, and part orthographic projection of the via hole in substrate exceeds orthographic projection of the lead in substrate；Side of the lead at via hole is covered by protection structure, and protection structure and first electrode same layer are arranged；From the protection structure mutually insulated of different wire contacts.
Description
Technical field
The present invention relates to field of display technology, and in particular, to the preparation side of a kind of substrate, display panel and substrate
Method.
Background technique
Currently, a variety of bad phenomenons (for example, viewing area display device fails) of substrate are used for by the side of lead
It etches caused by the etching liquid etching of other functional layers (such as anode layer).
It is first electrode above middle layer specifically, being middle layer above lead.And above the part edge portion of lead
There is no middle layer, therefore the first electrode material layer for being used to form first electrode can be contacted with the edge part.And at due to edge part
There should not be first electrode, therefore the first electrode material layer contacted with edge part is etched away, because there are over etching, therefore lead
Surface also will receive etching.
Referring to Fig. 1, lead be typically included under first material layer 21 and in upper second material layer 22, and for etching
The etching liquid of first electrode material layer is greater than the etch rate to second material layer 22 to the etch rate of first material layer 21.From
And the part for being partially larger than second material layer 22 and being etched away that first material layer 21 is etched away, cause lead 2 to generate upper big
Under small structure, therefore the encapsulated layer 5 being located above lead the side of the edge part after being etched can not be fully sealed, the side
Air duct 51 is formed between meeting and sealant, air easily passes through the air duct 51 and enters in the viewing area of substrate, display
It can therefore be affected in area to the display device of steam, oxygen sensitive in air, to cause a variety of bad of substrate
Phenomenon.
Summary of the invention
The edge part that the present invention at least partly solves the lead of existing substrate be used to etch the etching of other functional layers
Liquid etching, so as to cause substrate a variety of bad phenomenons insufficient problem, provide and a kind of do not increasing functional substrate layer
Under the premise of, the etching liquids of other functional layers is avoided to the etching of the edge part of the lead of substrate, to enhance substrate
Leakproofness, to improve the preparation method of the substrate of the reliability of substrate, display panel and substrate.
Solving technical solution used by present invention problem is a kind of substrate, comprising:
Substrate, the more leads in the substrate, the middle layer above the lead are located at the middle layer
The first electrode of top；
The lead includes first material layer and second material layer, wherein first material layer than second material layer closer to
Substrate, and the etching liquid for etching the first electrode is greater than to second material etch rate of the first material layer
The etch rate of the bed of material；
The middle layer has via hole, orthographic projection of the via hole in substrate and orthographic projection of the lead in substrate
It partly overlaps, and part orthographic projection of the via hole in substrate exceeds orthographic projection of the lead in substrate；
Side of the lead at the via hole is covered by protection structure, and the protection structure and the first electrode are same
Layer setting；From the protection structure mutually insulated of the different wire contacts.
Optionally, the protection structure also covers fringe region of the lead at the via hole.
Optionally, the substrate includes viewing area and the peripheral region around the viewing area periphery, and the via hole is set to
The peripheral region and the circular viewing area.
Optionally, organic light emitting diode device, the organic light emitting diode device packet are equipped with above the middle layer
Include the first electrode, the luminescent layer above the first electrode, the second electrode above the luminescent layer.
Optionally, the first electrode is anode layer, and the second electrode is cathode layer.
Optionally, the first material layer is made of aluminium, and the second material layer is made of titanium；
The material of the first electrode includes tin indium oxide and silver.
Optionally, the substrate further includes thin film transistor (TFT), and the thin film transistor (TFT) includes grid, source electrode, drain electrode, described
Lead is at least arranged with one of the grid, the source electrode, the drain electrode same layer.
Optionally, the middle layer is planarization layer.
Solving technical solution used by present invention problem is a kind of display panel, including above-mentioned substrate.
Solve the preparation method that technical solution used by present invention problem is a kind of substrate, comprising:
More leads are formed on substrate；
Form middle layer above the lead, form via hole on the middle layer, the via hole in substrate just
Projection partly overlaps with orthographic projection of the lead in substrate, and part orthographic projection of the via hole in substrate is beyond described
Orthographic projection of the lead in substrate；
It is rectangular on the middle layer that the first electrode material layer is performed etching at first electrode material layer, it is formed
First electrode, protection structure；
Wherein, the lead includes first material layer and second material layer, wherein first material layer is more than second material layer
Close to substrate, and the etching liquid for etching the first electrode is greater than to described the etch rate of the first material layer
The etch rate of two material layers；
Side of the lead at the via hole is covered by protection structure, from the protection of the different wire contacts
Structure mutually insulated.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of lead and encapsulated layer in the related technology；
Fig. 2 is the vertical view and cross-sectional view of substrate viewing area stain in the related technology；
Fig. 3 a is that the multiple regions of substrate viewing area in the related technology generate the quantity of bad point；
Fig. 3 b is the distribution schematic diagram of the bad point in Fig. 3 a；
Fig. 4 is a kind of schematic diagram of substrate structure of the embodiment of the present invention 1；
Fig. 5 is another schematic diagram of substrate structure of the embodiment of the present invention 1；
Fig. 6 is a kind of schematic top plan view of board structure of the embodiment of the present invention 1；
Description of symbols therein: 1, substrate；2, lead；21, first material layer；22, second material layer；3, intermediate
Layer；31, via hole；32, the boundary of middle layer；4, first electrode；41, structure is protected；5, encapsulated layer；51, air duct；52, it seals
Fill the boundary of layer；61, the first dam；62, the second dam；7, viewing area boundary；VSS, ground terminal；VDD, operating voltage end.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, with reference to the accompanying drawing and it is embodied
Mode further retouches a kind of display unit provided by the present invention, display base plate and its driving method and display device work in detail
It states.
Explanation of nouns
In this application, unless otherwise specified, following technical terms should understand according to following explanations:
Multiple structures " same layer setting " refer to that multiple structures are to be formed by the same material layer, therefore they are in layered relationship
It is upper to be in identical layer, but their being equidistant between substrate are not represented, their other layers between substrate are not represented yet
Structure is identical.
A is located above B, refers to that the place layer of A is formed after the layer of the place of B, thus from layered relationship A ratio B further from
Substrate, it is not intended that being all stacked on A in all position B, such as B can also be set to position existing for no A.
Embodiment 1:
Referring to fig. 4 to 6, the present embodiment provides a kind of substrates, comprising:
Substrate 1, the more leads 2 in substrate 1, the middle layer 3 above lead 2, above middle layer 3
First electrode 4；
Lead 2 includes first material layer 21 and second material layer 22, wherein first material layer 21 is more than second material layer 22
Close to substrate 1, and the etching liquid for etching first electrode 4 is greater than to second material layer the etch rate of first material layer 21
22 etch rate；
Referring to fig. 4, middle layer 3 has a via hole 31, and the orthographic projection of via hole 31 on the base 1 and lead 2 are on the base 1 just
Projection section overlapping, and the part orthographic projection of via hole 31 on the base 1 exceeds the orthographic projection of lead 2 on the base 1；
Side of the lead 2 at via hole 31 is covered by protection structure 41, and protection structure 41 and 4 same layer of first electrode are arranged；
41 mutually insulated of protection structure contacted with different leads 2.
In principle, in the preparation process of substrate, lead 2 is formed on the base 1 first (for example, being used for and ground terminal VSS
The lead 2 of connection, the lead 2 being connect with operating voltage end VDD), followed by middle layer 3 (such as planarization layer PLN), Zhi Houshi
First electrode 4 (such as anode layer, pixel electrode), referring to Fig. 3, via hole 31 is connected to the surface of lead 2, therefore plated film is formed
First electrode material layer can also fill to the via hole 31, and contacted with the surface of lead 2.
Lead 2 may include 2 layer of material, by apart from substrate by it is remote and into for titanium coating (i.e. first material layer 21),
Aluminum metal layer (i.e. second material layer 22).The etching liquid of first electrode 4 contains certain density HNO3(nitric acid), H3PO4(phosphorus
Acid), which hardly etches titanium, but has very strong etching effect to aluminum metal, is such as carved by following equation
Erosion: Al+4HNO3(dilute)=Al (NO3)3+NO↑+2H2O.Therefore, if quarter of the side of lead 2 by the etching liquid of first electrode 4
Erosion, then the side structure (referring to Fig. 1) after etching, which will cause substrate, thoroughly to be sealed.
Certainly, lead 2 can also include the other materials layer other than first material layer 21, second material layer 22, such as also
It may include that can also be made of titanium positioned at the layer of 21 lower section of first material layer.As long as in short, there is the material layer ratio under in principle
It is easier to be etched in upper material layer, can all cause the problem of base plate seals deficiency.
In above scheme, the orthographic projection of via hole 31 on the base 1 and the orthographic projection of lead 2 on the base 1 partly overlap packet
The situation that the orthographic projection of the edge of lead 2 on the base 1 is located within the scope of the orthographic projection of the edge of via hole 31 on the base 1 is included,
Also include the case where that the orthographic projection of the edge of lead 2 on the base 1 is overlapped with the orthographic projection of the edge of via hole 31 on the base 1.
Lead 2 is contacted with protection structure 41 with the side that via hole 31 is connected to, and the first protection structure 41 and first electrode 4 are same
Layer setting, namely during performing etching to form first electrode 4 to first electrode material layer, will not be located at lead 2 at least
Part first electrode material layer on the side being connected to via hole 31 etches away, therefore the side that lead 2 is connected to via hole 31 will not
By the etching of the etching liquid for etching first electrode 4, the first electrode being retained on the side that lead 2 is connected to via hole 31
Material layer is exactly to protect structure 41.
Certainly, since first electrode material layer (first electrode 4, protection structure 41) has conducting function, with difference
The protection structure 41 that lead 2 contacts answers mutually insulated, to avoid the risk of short circuit.
Meanwhile protecting structure 41 is the structure different from first electrode 4, therefore it should not connect between first electrode 4
Touching.
In addition, the distance between side of different leads 2 contacts all at 150 microns or more with the side of different leads 2
Protection structure 41 answers mutually insulated (cannot contact) to be easy to implement.
As it can be seen that the scheme of the present embodiment does not increase new material layer, therefore, increase does not prepare the technology difficulty of substrate
And step.
Optionally, referring to Fig. 5, structure 41 is protected also to cover fringe region of the lead 2 at via hole 31.
In above scheme, the overlay area to lead 2 of structure 41 will be protected to have extended to lead 2 by the side of lead 2
Exposed fringe region.On the one hand, first electrode material layer that only reservation is contacted with the side that via hole 31 is connected to is avoided in work
Skill realizes the phenomenon that having certain difficulty, being likely to result in over etching；On the other hand, it only remains and the exposure of lead 2
The first electrode material layer (protection structure 41) of fringe region contact, avoids and protects the area of the covering of structure 41 excessive and cause
Residual the problems such as.
Certainly, if protection structure 41 cover bigger region (such as in Fig. 6 a corresponding lead 2 multiple protection knots
Structure 41 is linked together) and it is feasible.
Optionally, referring to Fig. 6, substrate includes viewing area and the peripheral region (only showing part) around viewing area periphery, mistake
Hole 31 is set to peripheral region and around viewing area.
In above scheme, referring in Fig. 6, substrate is that boundary is divided into viewing area and peripheral region with the boundary 7 of viewing area.Display
For display structure, such as first electrode 4 to be arranged in area, and peripheral region is for connecting driving chip (IC), realizing that signal introduces
Deng.
Be set to peripheral region via hole 31 can for around viewing area ring-type, so that the middle layer 3 of peripheral region is also divided into
Multiple rings, these rings form dam (Dam) structure (dam is made of middle layer 3 in other words), such as the first dam
61, the second dam 62, the dam structure is for preventing the material liquid stream for forming functional substrate layer from going out substrate.In addition, on substrate
It is formed after repertoire layer, forms encapsulated layer (not shown) on substrate, the boundary 52 of the encapsulated layer is than middle layer
Boundary 32 further from viewing area boundary 7, referring to Fig. 6.
Optionally, Organic Light Emitting Diode (Organic Light-Emitting Diode is equipped with above middle layer 3；Letter
Claim OLED) device, OLED device includes first electrode 4, the luminescent layer above first electrode 4, above luminescent layer
Second electrode.
In above scheme, substrate is oled substrate, which in the preparation, usually first forms aobvious on the base 1
Show driving circuit, includes more leads 2 etc. in display driver circuit, later covered display driver circuit with middle layer 3, then
OLED device is formed in middle layer 3.Under normal circumstances, the function of the lead 2 in OLED device in display driver circuit
Ergosphere is anode layer, and therefore, optionally, first electrode 4 is anode layer, and second electrode is cathode layer.
Optionally, anode layer includes multilayer material layer, i.e. tin indium oxide (Indium Tin Oxides；Abbreviation ITO) layer,
Silver metal layer, ITO layer, lead 2 include multilayer material layer, by apart from substrate by remote and into for titanium coating, aluminum metal layer, titanium
Belong to layer, the etching liquid of anode layer includes HNO3、H3PO4.Once the etching liquid for etching anode layer etches into the side of lead 2,
The silver ion (material layer from anode layer) being then dissolved in etching liquid can be set with the metallic aluminium of the side exposure of lead 2
Reaction is changed, part silver is caused to occur in the form of simple substance particle, and anode layer surface is retained in by flowing etc., silver-colored simple substance is unstable
Fixed, if entering air in the viewing area of oled substrate, silver-colored simple substance can be aoxidized with the oxygen in air, generate silver oxide, be lost
It stays in anode layer surface and becomes silver-colored stain, cause the display of oled substrate bad, the figure on the left side is the stain of substrate referring to fig. 2
Top view, the figure on the right are the cross-sectional view of left side stain, are the stain of different subregions in substrate certain area referring to Fig. 3 a
Quantity is the specific schematic diagram of the stain of different subregions corresponding from Fig. 3 a referring to Fig. 3 b.Above-mentioned series reaction equation
Are as follows:
Equation (one): 4HNO3 (dilute)+3Ag=3AgNO3+2H2O+NO；
Equation (two): 3AgNO3+Al=Al (NO3) 3+Ag；
Equation (three): 4Ag+O2=2Ag2O (black).
As it can be seen that influence of the stain to substrate display effect is still very big, and therefore, the setting protection structure 41 on lead 2
The generation for also avoiding above-mentioned series reaction avoids the bad phenomenon that silver-colored stain occurs in oled substrate, to improve
The display effect of oled substrate.
Certainly, substrate is not limited to oled substrate, is also possible to crystal liquid substrate, and first electrode 4 is also possible to pixel electrode.
Optionally, substrate further includes thin film transistor (TFT), and thin film transistor (TFT) includes grid, source electrode, drain electrode, lead 2 at least with
The setting of one of grid, source electrode, drain electrode same layer.
In above scheme, lead 2 and at least one of grid, source electrode, drain electrode same layer are arranged, and source electrode and drain electrode can be same
Layer setting, it is therefore preferred that lead 2 and grid same layer are arranged, or, lead 2, source electrode, drain electrode three's same layer setting.
Structurally, it can reduce the integral thickness of substrate；For from the preparation process of substrate, one can be reduced
Layer of material it is graphical.
Further, the lead 2 that lead 2 is transmitted as signal between different thin film transistor (TFT)s, avoids in the exhausted of substrate
It is punched in edge layer, while improving the stability that signal transmits between different thin film transistor (TFT)s.
Optionally, middle layer 3 is planarization layer (PLN).
In above scheme, for segment difference caused by smooth each layer pattern and by lead 2 and the use for being located at the top of lead 2
Completely cut off in conductive functional layer, forms planarization layer above lead 2, planarization layer can use resin material.
Embodiment 2
The present embodiment provides a kind of display panels, including aforesaid substrate.
In above scheme, under the premise of no increase functional layer, avoid the surface of the lead in substrate by with
Etching liquid etching in etching first electrode or for etching other functional layers, avoids shape between the side of lead and sealant
At air duct, to ensure that the leakproofness of substrate, and then the display quality of display panel is improved.
Embodiment 3
The present embodiment provides a kind of preparation method of substrate, the product form of substrate may refer to Fig. 4 to 6, the preparation side
Method includes:
More leads 2 are formed on substrate；
Middle layer 3 is formed above lead 2, and via hole 31, the orthographic projection of via hole 31 on the base 1 are formed in middle layer 3
It partly overlaps with the orthographic projection of lead 2 on the base 1, and the part orthographic projection of via hole 31 on the base 1 exceeds lead 2 in substrate
Orthographic projection on 1；
First electrode material layer is formed above middle layer 3, first electrode material layer is performed etching, and forms first electrode
4, structure 41 is protected；
Wherein, lead 2 includes first material layer 21 and second material layer 22, wherein 21 to the second material of first material layer
Layer 22 is closer to substrate 1, and the etching liquid for etching first electrode 4 is greater than to second the etch rate of first material layer 21
The etch rate of material layer 22；
Side of the lead 2 at via hole 31 is covered by protection structure 41, and the protection structure 41 contacted with different leads 2 is mutual
Insulation.
In above scheme, although increasing the protection structure 41 being in contact with it on the side that lead 2 is connected to via hole 31,
But the mode of the protection structure 41 is that the etch areas of first electrode material layer is arranged on the side of lead 2 by reducing
, therefore, do not increase the technology difficulty of substrate preparation.In a sense, the packaging technology difficulty of substrate is reduced,
Specifically, if no on the side that lead 2 is connected to via hole 31 protect structure 41, to reach the leakproofness of same degree,
It needs to increase, the technique in the filling of hole that the side of lead 2 is etched.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also other elements including being not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including element.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (10)
1. a kind of substrate, comprising: substrate, the more leads in the substrate, the middle layer above the lead, position
First electrode above the middle layer；
It is characterized in that,
The lead includes first material layer and second material layer, wherein first material layer than second material layer closer to substrate,
And the etching liquid for etching the first electrode is greater than to the second material layer etch rate of the first material layer
Etch rate；
The middle layer has via hole, orthographic projection of the via hole in substrate and orthographic projection part of the lead in substrate
Overlapping, and part orthographic projection of the via hole in substrate exceeds orthographic projection of the lead in substrate；
Side of the lead at the via hole is covered by protection structure, and the protection structure is set with the first electrode same layer
It sets；From the protection structure mutually insulated of the different wire contacts.
2. substrate according to claim 1, which is characterized in that the protection structure also covers the lead in the via hole
The fringe region at place.
3. substrate according to claim 1, which is characterized in that the substrate includes viewing area and the circular viewing area week
The peripheral region on side, the via hole are set to the peripheral region and around the viewing areas.
4. substrate according to claim 1, which is characterized in that be equipped with Organic Light Emitting Diode device above the middle layer
Part, the organic light emitting diode device include the first electrode, the luminescent layer above the first electrode, are located at institute
State the second electrode above luminescent layer.
5. substrate according to claim 4, which is characterized in that the first electrode is anode layer, and the second electrode is
Cathode layer.
6. substrate according to claim 5, which is characterized in that
The first material layer is made of aluminium, and the second material layer is made of titanium；
The material of the first electrode includes tin indium oxide and silver.
7. substrate according to claim 1, which is characterized in that the substrate further includes thin film transistor (TFT), and the film is brilliant
Body pipe includes grid, source electrode, drain electrode, and the lead is at least set with one of the grid, the source electrode, the drain electrode same layer
It sets.
8. substrate according to any one of claims 1 to 7, which is characterized in that the middle layer is planarization layer.
9. a kind of display panel, which is characterized in that including the substrate any in claim 1 to 8.
10. a kind of preparation method of substrate characterized by comprising
More leads are formed on substrate；
Middle layer is formed above the lead, forms via hole, orthographic projection of the via hole in substrate on the middle layer
It partly overlaps with orthographic projection of the lead in substrate, and part orthographic projection of the via hole in substrate exceeds the lead
Orthographic projection in substrate；
It is rectangular on the middle layer that the first electrode material layer is performed etching at first electrode material layer, form first
Electrode, protection structure；
Wherein, the lead includes first material layer and second material layer, wherein first material layer than second material layer closer to
Substrate, and the etching liquid for etching the first electrode is greater than to second material etch rate of the first material layer
The etch rate of the bed of material；
Side of the lead at the via hole is covered by protection structure, from the protection structure of the different wire contacts
Mutually insulated.
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| WO2021258468A1 (en) * | 2020-06-22 | 2021-12-30 | 武汉华星光电技术有限公司 | Display panel and preparation method therefor |
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