KR20090036198A - Liquid crystal display device with soda-lime glass and method of fabricating the same - Google Patents

Abstract

A liquid crystal display device with a soda-lime glass is prevented and a method of fabricating the same are provided to prevent elution of sodium ion while using the soda-lime glass, thereby reducing manufacturing costs. The first substrate(105) is made of a soda-lime glass. A color filter layer(109) is formed on the first substrate. An overcoat layer(111) is formed on an upper part of the color filter layer. A gate line and a data line cross each other on an overcoat layer to define a plurality of pixel regions. A TFT(Thin Film Transistor) is connected to the gate line and data line in a switching area within each pixel region. A pixel connecting electrode(158) contacts with a drain electrode of the TFT. A liquid crystal layer(192) is interposed between the first and second substrates. Pixel electrodes and drain electrodes within each pixel region are electrically connected by the pixel connecting electrode.

Description

Liquid crystal display device with soda-lime glass and method of fabricating the same}

The present invention relates to a liquid crystal display device, and more particularly, to a transverse electric field type liquid crystal display device manufactured using soda lime glass.

In general, a liquid crystal display device is a display device using characteristics of liquid crystal molecules that are differently arranged according to voltage application. The liquid crystal display device can be driven at a lower power than a cathode ray tube, and is advantageous in miniaturization and thinning. It has been in the spotlight as a flat panel display device.

The liquid crystal display device is largely composed of an array substrate on which a thin film transistor is formed, and a color filter substrate on which a color filter is formed, and a liquid crystal layer is interposed in a spaced area between the two substrates.

1 is a view schematically showing a liquid crystal display using a conventional non-alkali glass.

As shown, the general liquid crystal display device 1 includes a color filter layer 26 including red, green, and blue color filter patterns 26a, 26b, and 26c on an inner surface of the transparent first non-alkali glass 22. And a color filter substrate having a black matrix 25 formed between the color filter patterns 26a, 26b, and 26c, and a common electrode 28 deposited under the color filter layer 26 and the black matrix 25. 20 and a pixel electrode 48 formed inside the pixel region P, which is defined by crossing a plurality of gates and data lines 44 and 46 on another second non-alkali glass 42 facing the same. The array substrate 40 includes a thin film transistor Tr as an element, and a liquid crystal 50 is interposed between the color filter substrate 20 and the array substrate 40.

As described above, alkali-free glass is generally used for the base substrate forming the array of the general liquid crystal display and the color filter substrate.

Typically, the glass is divided into alkali-free glass, soda lime glass, and borosilicate glass. Here, soda-lime glass refers to a glass having a Na ₂ O content of 1 wt% or more, and an alkali-free glass refers to a glass having Na ₂ O content of 0.1 wt% or less and Na ₂ O content of 0.1 w% to 1 w% borosilicate. It is called the Kate Glass. At this time, the soda lime glass is also called alkali glass.

Alkali glass is mainly used in an active matrix liquid crystal display including a thin film transistor. Soda-lime glass contains a lot of alkali ions, for example sodium ions (Na +), so that the alkali ions are easily eluted, so when the thin film transistor array substrate is made of soda-lime glass having such characteristics, it is diffused in soda-lime glass When the thin film transistor is formed by alkali ions, it contaminates the channel of the upper thin film transistor so that the semiconductor characteristic of the channel has a conductive characteristic, thereby generating a current in the channel even when the gate voltage is off, resulting in leakage current (I). _off ) to increase. In addition, when contamination with alkali ions occurs in the liquid crystal region, an afterimage problem may occur. However, since the alkali-free glass substrate hardly elutes alkali ions, it does not cause defects such as contamination and afterimage of the thin film transistor. For this reason, the liquid crystal display device is mainly manufactured from alkali-free glass.

However, although the liquid crystal display device has a good advantage of light weight and thinness compared to the general CRT (Cathode Ray Tube), the price is higher than the CRT and plasma type display devices of the same size has a negative effect on the consumer's purchase It is hurting.

Therefore, cost reduction has been strongly demanded in the manufacture of liquid crystal display devices. As a result, cost reduction is required even for glass, which occupies a large proportion of the price of parts or materials used in the manufacture of liquid crystal display devices. The use of low cost soda lime glass has been proposed. For reference, non-alkali glass is sold at about three times higher price than soda lime glass.

However, it is still necessary to solve the problems of alkali ion elution and diffusion caused by using such soda-lime glass as the substrate of the liquid crystal display device.

 On the other hand, in the liquid crystal display device, the common electrode and the pixel electrode are formed on each of the substrates facing each other, and in addition to the TN mode using the vertical electric field, the pixel on the array substrate is used to solve the problem of narrow viewing angle, which is a weak point of the TN mode liquid crystal display device. Background Art A liquid crystal display device in which both electrodes and a common electrode are formed and driven by a transverse electric field has been proposed.

However, in such a transverse field type liquid crystal display, since both the common electrode and the pixel electrode are formed on the array substrate, the outermost common electrode must be formed around the data line due to the influence of the data lines arranged in parallel with the electrodes. Since the black matrix is to be masked with respect to the spaced area between the wiring and the outermost part of the common electrode, an area in which the liquid crystal is normally driven within the actual pixel area is very limited, resulting in a decrease in aperture ratio and luminance.

An object of the present invention is to provide a liquid crystal display device capable of preventing elution of sodium ions while using soda-lime glass, thereby lowering manufacturing costs and improving price competitiveness.

In addition, to solve the problem of the narrow viewing angle of the conventional TN mode liquid crystal display device, a horizontal electric field type liquid crystal display device is proposed to improve the viewing angle characteristic and further improve the aperture ratio and luminance.

In addition, it proposes a TOC structure and at the same time removes components that are too heavy on one substrate to form some components on the opposite substrate facing the array substrate, thereby preventing the yield degradation caused by the increase in the process on one substrate. For another purpose.

A transverse electric field type liquid crystal display device according to the present invention comprises: a first substrate made of soda lime glass; A color filter layer formed on the first substrate; An overcoat layer formed on the color filter layer; Gate and data lines formed on the overcoat layer and crossing each other to define a plurality of pixel regions; A thin film transistor connected to the gate line and the data line in the switching area of each pixel area; A pixel connection electrode formed in contact with the drain electrode of the thin film transistor; A second substrate facing the first substrate and made of soda lime glass; A plurality of common electrodes and pixel electrodes formed alternately under the second substrate to correspond to the pixel areas; And a liquid crystal layer interposed between the first and second substrates, wherein the plurality of pixel electrodes and the drain electrode in each pixel area are electrically connected by the pixel connection electrode.

A common pad connecting electrode electrically connected to the common electrode is formed on the first substrate, and the second substrate includes: a common wiring connected to the plurality of common electrodes in the pixel area configured in the same row; An auxiliary common wiring connecting the common wiring; The pixel pattern connecting the plurality of pixel electrodes in each pixel area is formed. In this case, the common pad connection electrode and the auxiliary common wiring are configured to be connected to each other using silver dots or conductive balls in the seal pattern.

The plurality of pixel electrodes and the common electrode may be formed of the same material on the same layer. In this case, the pixel connection electrode extends up to the gate wiring of the front end, and the pixel connection electrode and the front gate wiring overlapping each other form a storage capacitor. Is characteristic.

In addition, the plurality of pixel electrodes and the common electrode may be formed of different metal materials or transparent conductive materials, and the plurality of pixel electrodes and the common electrode may be formed on different layers, wherein the plurality of common electrodes and the common wiring and It is preferable that an insulating layer having an auxiliary common contact hole exposing the auxiliary common wiring is formed on the entire surface under the auxiliary common wiring, and the pixel electrode and the pixel pattern are formed under the insulating layer.

In addition, the plurality of pixel electrodes and the common electrode may be formed on the same layer. In this case, the auxiliary common contact hole exposing the common common wiring on the front surface under the common wiring and the common common wiring; An insulating layer having a plurality of pixel holes is formed, the pixel pattern is formed under the insulating layer, and the plurality of pixel electrodes are formed by filling the plurality of pixel holes with the same material forming the pixel pattern.

The common wiring and the pixel pattern may form a storage capacitor by overlapping each other with the insulating layer interposed therebetween, and the storage capacitor may be formed to overlap the switching region in which the thin film transistor is formed. The wiring is preferably made of an opaque metal material.

The common wiring is formed corresponding to the gate wiring, and the outermost common electrode positioned at the outermost portion of the pixel area among the plurality of common electrodes is formed corresponding to the data wiring.

A black matrix may be formed on the first substrate to correspond to the switching region under the color filter layer, and a buffer layer may be formed on the entire surface of the second substrate on the inner surface of the second substrate.

A columnar spacer made of an organic insulating material is formed between the pixel connection electrode and the exposed drain electrode, and the pixel connection electrode surrounds the space.

A method of manufacturing a transverse electric field type liquid crystal display device according to the present invention includes the steps of: forming a color filter layer formed on a first substrate made of soda lime glass; Forming an overcoat layer on the color filter layer; Forming gate and data lines on the overcoat layer to cross each other to define a plurality of pixel regions; Forming a thin film transistor connected to the gate line and the data line in the switching area of each pixel area; Forming a first passivation layer over the thin film transistor, the first protective layer exposing the drain electrode of the thin film transistor; Forming a pixel connection electrode in contact with the exposed drain electrode over the first passivation layer; Forming a plurality of common electrodes and pixel electrodes which face each other on the inner side of the second substrate made of soda-lime glass and alternate with each other in response to each pixel region; Forming a liquid crystal layer between the first and second substrates; And forming a seal pattern on an edge of the first or second substrate and bonding the pixel connection pattern and the pixel electrode to be in contact with each other.

In this case, the forming of the plurality of common electrodes and the pixel electrodes which are alternated with each other on the inner surface of the second substrate may include forming the plurality of common electrodes on the inner surface of the second substrate; ; Forming the second passivation layer on a front surface of the plurality of common electrodes; And forming the plurality of pixel electrodes on the second passivation layer.

The forming of the plurality of common electrodes may further include forming common wirings connecting the common electrodes to the same layer and auxiliary common wirings connected to the common wirings.

The forming of the plurality of pixel electrodes may further include forming a pixel pattern connecting all of the plurality of pixel electrodes in each pixel area on the second passivation layer, wherein the pixel pattern is formed in the pixel pattern. And overlapping the common wiring, wherein the pixel pattern and the common wiring may be formed to cover the switching region.

The forming of the second protective layer may further include forming an auxiliary common contact hole for exposing the auxiliary common wiring, wherein the pixel connection electrode is formed to overlap the gate wiring of the previous stage. .

The forming of the plurality of common electrodes and the pixel electrodes alternately corresponding to each pixel area on the inner surface of the second substrate may include connecting the plurality of common electrodes and the common electrodes on the inner surface of the second substrate. Forming a wiring and an auxiliary common wiring connected to the common wiring; Forming a second passivation layer on a front surface of the plurality of common electrodes; Forming a first photoresist pattern of a first thickness and a second photoresist pattern of a second thickness thicker than the first thickness over the second protective layer; By removing the second protective layer exposed outside the first and second photoresist patterns, an auxiliary common contact forming a plurality of pixel holes corresponding to a portion where the pixel electrode is to be formed and exposing the auxiliary common wiring in the figure Forming a hole; Removing the first photoresist pattern of the first thickness; Forming a conductive material layer over an entire surface of the second photoresist pattern; Forming a photoresist layer on the entire surface of the conductive material layer; Ashing the photoresist layer to expose the conductive material layer overlying the second photoresist pattern; Removing the exposed conductive material layer to form a plurality of pixel electrodes corresponding to the plurality of pixel holes and the common wiring, and the auxiliary common pattern corresponding to the auxiliary common contact holes; Removing the second photoresist pattern.

The method may further include forming a black matrix on the first substrate corresponding to the switching region before forming the color filter layer.

Before forming the pixel connection electrode, a columnar spacer may be formed on the exposed drain electrode.

Further, before forming the plurality of common electrodes, the method may further include forming a buffer layer for preventing alkali ion elution on the entire surface of the second substrate.

The forming of the gate line and the data line may further include forming a common pad connection electrode, and forming the seal pattern and bonding the pixel connection pattern and the pixel electrode to be in contact with each other. And allowing the auxiliary common wiring and the pain pad connection electrode to be conductive through silver dots or conductive balls contained in the seal pattern.

The transverse electric field type liquid crystal display device according to each embodiment of the present invention having the above-described structure has an effect of providing a liquid crystal display device having a competitive price by being manufactured using soda-lime glass having a unit price about 3 times lower than that of an alkali free glass.

 In the transverse electric field type liquid crystal display device according to each embodiment of the present invention, the color filter layer and the overcoat layer are formed on the array substrate, thereby suppressing the emission of alkali ions from the first soda-lime glass, which is the base, thereby deteriorating the characteristics of the thin film transistor. Since the pixel electrode and the common electrode are formed on the opposite substrate facing the array substrate, the mask process concentrated on the array substrate is dispersed, thereby reducing the defect rate.

In addition, since the second protective layer is formed on the counter substrate, alkali ion elution from the base of the second soda lime substrate is suppressed, and in particular, the thin film transistor is positioned so that the liquid crystal layer is interposed therebetween. As a result, even if a small amount of alkali ions are eluted, the thin film transistor has a structural advantage that is hardly affected. Therefore, the transverse electric field type liquid crystal display device according to each embodiment of the present invention forms a structure that prevents the elution of alkali ions without using a specific material without further processing while using soda-lime glass, and thus greatly reduces manufacturing costs. It is an advantageous structure.

In addition, since the pixel electrode and the common electrode are formed on the opposing substrate, there is little influence from the data wiring formed on the array substrate in the electric field between these two electrodes, and therefore common to both sides of the data wiring as in the conventional transverse electric field type liquid crystal display device. Since the wirings do not need to be formed, the aperture ratio in the pixel area is maximized compared to the conventional transverse electric field type liquid crystal display device.

In addition, in the third embodiment according to the present invention, the common wiring is extended to the opposing substrate corresponding to the switching region in which the thin film transistor is formed, and thus the storage circuit is improved by using it as a storage capacitor.

Hereinafter, a liquid crystal display using soda lime glass according to the present invention will be described in detail with reference to the accompanying drawings.

2A and 2B are plan views of an array substrate and an opposing substrate for one pixel area P of the liquid crystal display according to the present invention, respectively, and FIG. 3A is a part of the liquid crystal display according to the first embodiment of the present invention. 3B is a cross-sectional view of a data pad unit DPA having a data pad of a liquid crystal display according to a first embodiment of the present invention, and FIG. 3C is a cross-sectional view of a liquid crystal display device according to a first embodiment of the present invention. A cross-sectional view of a storage region StgA in which a storage capacitor in a pixel region is formed in an electric field type liquid crystal display device, taken along cut lines IIIc-IIIc of FIGS. 2A and 2B.

For convenience of description, a display area DA including a plurality of pixel areas P, and a gate and data pad part having gates and data pads disposed outside the display area DA, respectively. A non-display area NA including (GPA, DPA) is defined. In this case, the gate and data pad units GPA and DPA are defined only in the array substrate and are not located in the color filter substrate.

As shown, the biggest feature of the transverse electric field type liquid crystal display device 101 according to the first embodiment of the present invention is the color filter layer 109 on the array substrate 105 and the respective pixel areas on the color filter layer 109. A thin film transistor Tr and a storage capacitor StgC, which are switching elements, are formed for each P), and an electric field is formed for each pixel region P in the counter substrate 171 facing the array substrate 105. The electrode 174 and the pixel electrode 177 are formed. In this case, the common electrode 174 and the pixel electrode 177 are electrically connected to the common pad connection electrode 123 and the pixel connection pattern 158 formed on the lower array substrate 105.

Looking at the transverse electric field type liquid crystal display device 101 according to the first embodiment of the present invention in more detail, first, in the array substrate 105, each pixel region P is formed on the transparent first soda lime glass 105 as a base. The black matrix 107 is formed to correspond to the switching region TrA in which the boundary and the thin film transistor Tr are formed. In this case, the black matrix 107 may be omitted for the boundary of each pixel area P. FIG.

In addition, a color filter layer 109 including a color filter pattern of red, green, and blue which is sequentially repeated corresponding to each pixel area P is formed on the black matrix 107, and the color filter layer 109 and the The overcoat layer 111 is formed of a colorless transparent organic insulating material on the black matrix 107. In this case, the overcoat layer 111 is formed to be sufficiently thick, so that its surface is flat without being influenced by the step difference caused by the components below.

The overcoat layer 111 serves to prevent leaching of alkali ions, in particular sodium ions (Na +) from the first soda lime glass 105. More precisely, it serves to prevent the diffusion of Alkyra ions emitted from soda lime glass. Therefore, as described above, the color filter layer 109 and the overcoat layer 111 are formed on the first soda lime glass 105 to contaminate the liquid crystal layer due to alkali ion diffusion and thin film transistors. It is an advantage of the present invention to solve the defects by performing the role of preventing channel contamination of Tr).

On the other hand, the gate wiring 117 is formed in one direction on the boundary of each pixel region P on the overcoat layer 111 having the flat surface, and the thin film transistor Tr is formed in each pixel region P. The gate region 119 is connected to the gate line 117 in the switching region TrA to be formed.

In addition, in the gate pad part GPA of the non-display area NA, a gate pad electrode 121 is formed and connected to the gate line 117, and a common pad electrode (not shown) and a common pad connected thereto. The connecting electrode 123 is formed. In this case, although the gate pad electrode 121 and the common pad connection electrode 123 are formed on the overcoat layer 111, the gate pad electrode 121 and the common pad are modified as an example. The connection electrode 123 may be formed on and in contact with the first soda lime glass 105 by removing the overcoat layer 111 disposed in the non-display area NA. In this case, alkali ions may be eluted from the first soda-lime glass exposed to the outside of the overcoat layer 111, but the non-display area NA including the gate pad part GPA and the data pad part DPA is included. Is not in contact with the liquid crystal layer 192 and becomes a region where the thin film transistor Tr is not formed, so even if alkali ions are eluted, it does not affect the characteristics of the liquid crystal display device.

The reason why the overcoat layer 111 is removed from the non-display area NA as in the modified example of the first embodiment is that the non-display area NA is positioned above and below the display area DA. In order to form the panel state by joining the array substrate 105 and the opposing substrate 171, a seal pattern 194 having adhesive and curing characteristics is formed. Barring or tearing of the overcoat layer 111 occurs to prevent this.

Next, a gate insulating film 126 is formed on the gate wiring 117 and the gate electrode 119 as an inorganic insulating material, and the gate wiring 117 is formed at the boundary of each pixel region P on the gate insulating film 126. ) And a data line 133 defining the pixel region P, which is formed to cross each other, and an ohmic contact spaced apart from the active layer 129a in correspondence with the gate electrode 117 in the switching region TrA. The semiconductor layer 129 including the layer 129b and the source and drain electrodes 135 and 137 spaced apart from each other are formed on the ohmic contact layer 129b. In this case, the source electrode 135 is electrically connected to the data line 133, and the sequentially stacked gate electrode 119, the gate insulating layer 126, the semiconductor layer 129, and the source and drain spaced apart from each other. The electrodes 135 and 137 form a thin film transistor Tr, which is a switching element.

In the data pad part DPA in the non-display area NA, the data line 133 is electrically connected to the gate insulating layer 126, and a data pad electrode 139 is formed. In this case, the first semiconductor pattern 130a and the second semiconductor pattern 130b are sequentially stacked under the data pad electrode 139 by the same material forming the semiconductor layer 129 from the gate insulating layer 126. It may be further configured. Meanwhile, although the common pad electrode (not shown) and the common pad connection electrode 123 are formed on the same layer as the gate pad electrode 121, the common pad electrode (not shown) and the common pad connection electrode ( 123 may be formed in the same shape on the layer on which the data pad electrode 139 is formed.

A first protective layer 142 made of an inorganic insulating material or an organic insulating material is formed on the thin film transistor Tr and the data line 133, and the first protective layer 142 is formed of the thin film transistor Tr. In the drain contact hole 145 exposing the drain electrode 137 and the gate pad contact hole 147 exposing the gate pad electrode 121 in the gate pad part GPA, and the data pad part DPA. And a common pad contact hole 151 exposing the data pad contact hole 149 exposing the data pad electrode 139, a common connection pad electrode 123, and a common pad electrode (not shown) connected thereto. Doing.

In addition, a spacer 155 is formed on the drain electrode 137 exposed through the drain contact hole 145 so that the array substrate 105 and the counter substrate 171 maintain a predetermined distance from each other, and the array substrate. Pixel connection electrodes 158 (158a, 158b, and 158c) are formed to electrically connect each of the thin film transistors Tr in the 105 and the pixel electrode 177 formed in the counter substrate 171 facing the thin film transistor Tr. have. In this case, the pixel connection electrode 158 is formed to cover the surface of the spacer 155 having a pillar shape as an organic insulating material and the drain electrode 137 exposed through the drain contact hole 145. It is characteristic that there is. In this case, the spacer 155 and the pixel connection electrode 158 are not necessarily dualized to form a double layer structure as described above, and may be formed of one conductive material to include a pillar shape having a sufficient height of about a cell gap. have.

The pixel connection electrode 158 connected to the drain electrode 137 is divided into three parts. The first part 158a covers the spacer 155 and contacts the drain electrode 137 and the pixel electrode 177. And a second portion 158b extending to an upper end gate wiring 117 located at an upper side not electrically connected directly to the thin film transistor Tr including the drain electrode 137 in the pixel region P; The second portion 158b may further include a third portion 158c extending further along the gate wiring 117 of the front end and overlapping the gate wiring 117 of the front end. In this case, the gate wiring 117 overlapping each other is formed as a first storage electrode, and the third portion 158c of the pixel connection electrode 158 overlapping the second storage electrode is formed as a second storage electrode. The storage capacitor StgC is formed using the first protective layer 126 and the first protective layer 142 as a dielectric layer. In this case, the second portion 158b of the pixel connection electrode 158 that passes through the pixel region from the pixel region P to the gate wiring 117 of the front end is connected to one of the pixel electrodes 177 of the opposing substrate 171. It is another feature of the first embodiment of the present invention that it is formed to overlap, whereby the reduction of the aperture ratio can be prevented.

Although not shown in the drawings, a metal pattern (not shown) is formed of a material in which the data line 133 is formed on the gate insulating layer 126 in a portion overlapping with the gate line 177. And a storage contact hole (not shown) that exposes the metal pattern (not shown) when the drain contact hole 145 is formed on the first passivation layer 142, and then the pixel connection electrode 158. The third portion 158c is formed to contact the metal pattern (not shown) through the storage contact hole (not shown), thereby forming the gate wiring 117 of the front end of the first storage electrode and the metal pattern (not shown). The storage capacitor StgC having an improved storage capacity may be configured using the second storage electrode and the gate insulating layer 126 as a dielectric layer.

Meanwhile, a common pad electrode (not shown) for applying a common electrode in addition to the gate and data pad electrodes 121 and 139 and a common connection pad electrode 123 connected to the gate pad part GPA or the data pad part DPA. ) Has the same cross-sectional shape as the gate or data pad electrodes 121 and 139 (in the drawing, the common pad connection electrode 123 has the same cross-sectional shape as the gate pad electrode 121 in the non-display area NA). Formed as an example). In this case, the common pad connection electrode 123 is connected to the common pad electrode (not shown) and is formed inside or outside or overlapping the seal pattern 194, which is a silver dot (not shown) or conductive ball 196. The seal pattern 194 including the back and the like is formed to be electrically connected to the auxiliary common wiring 180 formed on the counter substrate 171 by being conductive by the silver dot (not shown) or the conductive ball 196. . The common pad electrode (not shown) becomes a part receiving a common voltage from an external driving circuit (not shown), and the common connection pad electrode 123 receives the common voltage applied from the common pad electrode (not shown). Through the auxiliary common wiring 180 of the opposing substrate 171, it serves as a medium for finally transferring the common voltage to the common electrode 174.

The gate and data pad electrodes 121 and 139 are made of the same material that forms the pixel connection electrode 158 to correspond to the gate and data pad contact holes 147 and 149 and the common pad contact hole 151, respectively. ), The gate and data pad terminals 160 and 162 and the common pad terminal 164 contacting the common pad electrode (not shown) and the common pad connecting electrode 123 may be formed.

Although not shown in the drawings, a first alignment layer (not shown) is formed on the first passivation layer 142 to correspond to the entire surface of the display area DA. In this case, the first alignment layer (not shown) is formed on the top surface (the surface positioned at the end of the spacer) of the end of the pixel connection electrode 158, but the first alignment layer (not shown) is formed on the top surface of the end of the pixel connection electrode 158. Is removed in the bonding process so that the array substrate 105 and the counter substrate 171 are connected to each other by the pixel connection electrode 158.

On the other hand, when the structure of the counter substrate 171 facing the array substrate 105 having the above-described structure, in the inner surface of the second soda lime glass 171 which is a base in particular at the boundary of each pixel region (P) The common wiring 173 is formed to correspond to the gate wiring 117 on the array substrate 105, and the common wiring 173 is electrically connected by the auxiliary common wiring 180 formed in the non-display area NA. Is connected to.

In addition, a plurality of common electrodes 174 branching from the common wiring 173 to each pixel area P and including an outermost common electrode 174a and a central common electrode 174b in parallel with the data line 133. ) Is being formed. In this case, the outermost common electrode 174a positioned at the outermost portion of the pixel region P among the common electrodes 174 overlaps with the data line 133 formed on the array substrate 105. to be.

In addition, in the pixel region P, pixel patterns 176 are formed for each pixel region P in parallel with the common wiring 173 at predetermined intervals, and branched from the pixel pattern 176. A plurality of pixel electrodes 177 are formed to be parallel to the common electrode 174. In this case, the plurality of common electrodes 174 and the pixel electrodes 177 in the pixel areas P are alternately positioned.

In the transverse field type liquid crystal display device 101 according to the first embodiment of the present invention, the plurality of pixel electrodes 177 and the common electrode 174 are straight bars in the pixel area P. Although only one example, the pixel electrode 177 and the common electrode 174 may be formed to be bent with respect to the central portion of each pixel region (P). In this case, the data line 133 is also bent with respect to the central portion of each pixel region P, thereby forming a zigzag shape as a whole.

In addition, the number of the common electrode 174 and the pixel electrode 177 formed in each pixel region P may be decreased. For example, although it is shown in the drawing that three pixel electrodes 177 are formed on the common electrode 174 for each pixel region P, the outermost common part corresponding to the data line 133 is formed for each pixel region P. The electrode 174a and the single pixel electrode 177 may be formed only. Further, the common electrode 174 may have n or more and three or more pixel electrodes 177.

In the liquid crystal display according to the first exemplary embodiment of the present invention, the pixel electrode 177 and the common electrode 174 formed on the counter substrate 171 are all made of the same metal, that is, the first soda. Since the conductive glass is formed on the inner surface of the lime glass 171, there is no overlapping portion of the conductive pattern, so that the storage capacitor StgC, which is a component that must be provided for each pixel region P, cannot be formed. The storage capacitor StgC in each pixel region P is formed on the array substrate 105 as described above.

The second protective layer 182 is formed to cover the pixel electrode 177 and the common electrode 174 below. In this case, the second passivation layer 182 may correspond to a part of the pixel pattern 176 (or the pixel electrode 177) corresponding to the pixel connection pattern 158 formed in each pixel area P on the array substrate 105. The pixel contact hole 184 is provided with an auxiliary common contact hole 186 corresponding to a part of the auxiliary common wiring 180 corresponding to the common connection pad electrode 123. Accordingly, in the transverse field type liquid crystal display device 101 according to the first embodiment, the pixel connection pattern 158 and the pixel pattern 176 are in contact with each other through the pixel contact hole 184. The common electrode 174 formed by each P is also connected to an end thereof by a common wiring 173 formed through all of the pixel regions P formed in the same row, and the common wiring 173 is connected to the auxiliary common wiring 180. By being connected by), the counter substrate 171 is electrically connected to the whole, and the silver dot (not shown) or the seal pattern (not shown) through the auxiliary common contact hole 186 formed while exposing a part of the auxiliary common wiring 180. The conductive balls 196 included in 194 are in contact with each other and are electrically connected to the common pad connecting electrode 123 formed on the array substrate 105.

In this case, as a modification, the second protective layer 142 may be omitted. However, in the modified example in which the second protective layer 142 is omitted, the buffer layer for suppressing alkali ion elution between the pixel electrode 177 and the common electrode 174 and the second soda lime glass 171 ( Not shown) should be formed on the front surface.

In the display area DA of the opposing substrate 171, a pixel contact formed in the second passivation layer 142 by forming a second alignment layer (not shown) covering the second passivation layer 142. While covering the pixel pattern 176 (or the pixel electrode 177) exposed through the hole 184 or in the modified example, the pixel electrode 177 or the pixel pattern 176 and the common electrode 174 are covered. In addition, the pixel connection electrode 158 and the pixel pattern 176 or the pixel electrode 177 come into contact with and pressurized during the bonding process, such that the pixel connection electrode 158 and the pixel pattern 176 (or the pixel electrode 177) are pressed. The first and second alignment layers (not shown) covering the () are removed to connect the pixel connection electrode 158 and the pixel pattern 176 (or the pixel electrode 177).

In the case of the transverse electric field type liquid crystal display device according to the first embodiment of the present invention and the modification thereof having the above-described structure, the color filter layer 109 and the overcoat layer 111 are formed on the array substrate 105 to be the first soda lime. By suppressing the elution of alkali ions from the glass 105, it is prevented from adversely affecting the thin film transistor Tr, and the pixel electrode 177 and the common electrode 174 face the array substrate 105. By being formed on the counter substrate 171, the mask process concentrated on the array substrate 105 is dispersed, thereby reducing the defect rate.

On the other hand, since the second protective layer 142 is formed on the counter substrate 171, the alkali ion elution from the second soda lime substrate 171 as a base is suppressed. Since the counter substrate 171 has a thickness difference between the array substrate 105 and the cell gap (thickness of the liquid crystal layer) and is spaced apart from each other, a relatively long distance even if a small amount of alkali ions are eluted from the counter substrate 171. The thin film transistor Tr on the array substrate 105 positioned at has a structural advantage that is hardly affected by the thin film transistor Tr.

Therefore, the lateral field-type liquid crystal table market according to the first embodiment of the present invention having such a structure forms a structure that prevents the elution of alkali ions without using a specific material without further processing while using soda-lime glass. It has a very good advantage in saving.

In addition, since the pixel electrode 177 and the common electrode 174 are formed on the opposing substrate 171, the data wiring formed on the array substrate 105 to the transverse electric field generated by these two electrodes 177 and 174 ( 133 is hardly influenced, and the outermost common electrode 174a is formed on the opposing substrate 171 in correspondence with the data line 133 so that the pixel region P of the conventional transverse electric field type liquid crystal display device is formed. Has the effect of maximizing the aperture ratio. That is, in the conventional transverse electric field type liquid crystal display device, since both the data line, the pixel electrode, and the common electrode are formed on the array substrate, the common electrode is formed on both sides of the data line to minimize the influence of the data line. Therefore, in the pixel area, since the area where the data line is formed and the outermost common electrode are doubled as if to surround the data line, the aperture ratio in the pixel area is reduced. However, in the first embodiment and its modifications according to the present invention, the width of one common electrode 174 for each pixel region P is formed by overlapping the data line 133 and the outermost common electrode 174a. It can be seen that the opening ratio and the luminance are improved because the region of the degree is a region that is normally opened compared to the prior art.

On the other hand, as another modification of the first embodiment according to the present invention in the opposite substrate 171 is in direct contact with the inner surface of the second soda lime glass 171 forming a base and the inorganic insulating material, for example, oxidation on the front surface A buffer layer (not shown) may be further formed to prevent alkali ion elution with silicon (SiO ₂ ) or titanium oxide (TiO ₂ ), or an organic insulating material such as benzocyclobutene (BCB) or photo acryl. have. In this case, the effect of reducing the material cost is reduced by using soda-lime glass, which is less effective than the first embodiment described above, but still has a low cost, and furthermore, the problem of lowering the driving of the liquid crystal by alkali ion dissolution is solved. The structure can be prevented more reliably.

Second Embodiment

The rotation type liquid crystal display device according to the second exemplary embodiment of the present invention is formed by using two metal materials on an opposing substrate to form a storage capacitor in addition to the pixel electrode and the common electrode. Therefore, a portion having a difference from the above-described first embodiment is a storage capacitor, an extension of the pixel connection pattern, a location of the common wiring and the pixel pattern, and the like. For convenience of description, the same components as in the above-described first embodiment are denoted by the reference numeral 100.

In the second embodiment, description will be made mainly on the parts which are different from the above-described first embodiment, and the cross-sectional shapes of the array substrate and the color filter substrate are respectively shown for the characteristic portions.

The shapes of the gate pad portion and the data pad portion are the same as those of the first embodiment described above, and thus are not shown in the drawings.

4A and 4B are plan views of one pixel region of the array substrate and the color filter substrate of the transverse field type liquid crystal display according to the second exemplary embodiment of the present invention, respectively, and FIG. 5A shows the cutting line Va-Va in FIG. FIG. 5B is a cross-sectional view of the portion cut along the cutting line Vb-Vb of FIG. 4B.

First, referring to FIGS. 4A and 5B of the array substrate 205, the pixel region P is defined to cross each other, and gate and data lines 217 and 233 are formed, and the gate and data lines ( The thin film transistor Tr including the gate electrode 219, the gate insulating layer 226, the semiconductor layer 229, and the source and drain electrodes 235 and 237 is disposed at the intersection of the 217 and 233, and the data line 233 ) And the thin film transistor Tr, and the first protective layer 242 is formed. In addition, the pixel electrode 258 is formed through the drain electrode 237 and the drain contact hole 245 of the thin film transistor Tr. In this case, since the storage capacitor StgC does not need to be formed on the array substrate 205, the pixel connection electrode extends to the gate wiring of the front end as in the first embodiment. The pixel connection electrode 258 has a form in which the second and third portions of the first embodiment are removed.

On the other hand, looking at the cross-sectional structure, the black matrix 207 is formed on the first soda-lime glass 205 corresponding to the thin film transistor (Tr), and partially overlaps the black matrix 207 A color filter layer 209 is sequentially formed for each pixel region P and includes a red, green, and blue color filter pattern, and an overcoat layer 211 having a flat surface is formed thereon. In addition, gate and data lines 217 and 133 intersecting with the thin film transistor Tr as described in the first embodiment are formed on the overcoat layer 211. In this case, as a modification, the black matrix 207 may be formed at the boundary of each pixel area P, and the overcoat layer 211 may be removed for the non-display area.

Meanwhile, referring to FIG. 4B, the planar structure of the opposing substrate 271 facing the array substrate 205 having such a configuration, the common wiring 273 on the second soda lime glass 271 is the array substrate ( The gate wirings 217 of FIG. 4A are formed in one direction corresponding to the gate wirings 217 of FIG. 4A, and the common wirings 273 are arranged inside the pixel area P in parallel with the data wirings 233 of FIG. 4A. The plurality of common electrodes 274 including the outermost common electrode 274a and the central common electrode 274b are spaced apart from each other by being spaced apart from each other. In this case, the outermost common electrode 274a among the plurality of common electrodes 274 is formed to overlap the data line 233 of FIG. 4A on the array substrate 205 of FIG. 4A.

In addition, a pixel pattern 288 is formed to overlap the common wiring 273 in each pixel area P, and the plurality of pixel electrodes 289 are branched from the pixel pattern 288 to form the common electrode 274. ) Are formed side by side alternately with). In this case, the common wiring 273 and the pixel pattern 288 overlapping each other may include a storage capacitor StgC having the common wiring 273 as a first storage electrode and the pixel pattern 288 as a second storage electrode. It is characterized by what is achieved.

On the other hand, one pixel electrode 288 in each pixel region P is formed in contact with the pixel connection pattern 258 of FIG. 4A of the array substrate 205 of FIG. 4A, and the common wiring 273 is Although not shown in the drawing, in the non-display area as in the first embodiment described above, all are electrically connected through the auxiliary common wiring (not shown), and the auxiliary common wiring (not shown) is the auxiliary common contact hole (not shown). The common pad connection electrode (not shown) and conductive ball (not shown) or silver dots (not shown) of the array substrate 205 of FIG. 4A are configured to contact each other.

The cross-sectional structure of the counter substrate 271 having such a configuration will be described with reference to FIG. 5B. The common wiring 273 is made of a metal material on the second soda lime glass 271 as a base to the auxiliary common wiring (not shown). And a plurality of common electrodes 274 that are electrically connected to each other by the plurality of common electrodes 274a and the central common electrode 274b by branching from the common wiring 273 in each pixel area P. Are spaced apart.

In addition, a second protective layer 282 is formed to cover the auxiliary common wiring (not shown), the common wiring 273, and the plurality of common electrodes 274 as an inorganic insulating material. In this case, although not shown in the drawing, the second protective layer 282 is removed for a part of the auxiliary common wiring (not shown) to form an auxiliary common contact hole (not shown). The second protective layer 282 is formed on the entire surface except the auxiliary common contact hole (not shown) to prevent alkali ions eluted from the second soda lime glass 271 to diffuse into the liquid crystal layer (not shown). It will play a role.

In addition, a pixel pattern 288 is formed on the second passivation layer 282 and overlaps the common wiring 273 as a metal material or a transparent conductive material for each pixel area P. A plurality of pixel electrodes 289 are formed inside P) by branching from the pixel pattern 288 and alternately parallel to the plurality of common electrodes 274. In this case, at least one of the plurality of pixel electrodes 289 faces the array substrate 205 of FIG. 4A and interposes a liquid crystal layer (not shown) and either the array substrate 205 of FIG. 4A or the opposite substrate 271. In contact with the pixel connection electrode 258 on the array substrate (205 in FIG. 4A) in the process of forming a seal pattern (not shown) along the edge of any one substrate to form a panel form, the contact is electrically connected It is formed in position.

In this case, although not shown in the drawings, the auxiliary common pattern may be formed of the same metal material or conductive material that forms the pixel electrode 289 to correspond to a portion corresponding to the auxiliary common contact hole (not shown) of the auxiliary common wiring (not shown). (Not shown) may be further formed. FIG. In particular, when the material forming the pixel electrode 289 and the pixel pattern 288 is one of a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), the transparent material Since the conductive material has a very strong characteristic of corrosion, it is a process problem that the auxiliary common pattern (not shown) exposed through the auxiliary common contact hole (not shown) is exposed to the air before the seal pattern (not shown) is formed. Panel Forming Process In order to prevent the problem of corrosion, the secondary common pattern (not shown) may be one of indium tin oxide (ITO) or indium zinc oxide (IZO). ) Can be formed.

On the other hand, as a modification of the opposing substrate according to the second embodiment, the common electrode 274 and the pixel electrode 289 in the pixel region P may be formed on the same layer as in the above-described first embodiment. .

FIG. 6 is a cross-sectional view of a portion cut along a cutting line Vb-Vb shown in FIG. 4b in the counter substrate according to the modification of the second embodiment of the present invention, and FIG. 7 is a variation of the second embodiment of the present invention. In the counter substrate according to the example, it is sectional drawing about the part in which the auxiliary common wiring corresponding to the auxiliary common contact hole of the non-display area NA was formed. The same reference numerals are given to the same components as in the second embodiment.

As shown, the portion where the storage capacitor StgC is formed has the same structure as in the second embodiment. In the non-display area NA, the common electrode 274 and the pixel electrode 289 are alternately formed of different materials on the second soda-lime glass 271 which is the base inside the pixel area P. The auxiliary common wiring 280 is formed of the same metal material as the common electrode 274. In addition, a second passivation layer 282 is formed on the entire surface of the common electrode 274. In this case, the second passivation layer 282 is formed in the pixel hole 283 exposing the pixel electrode 289 by removing the portion corresponding to the pixel electrode 289 and the auxiliary common wiring 280. ), An auxiliary common contact hole 286 exposing part thereof is provided. The auxiliary common pattern 290 may contact the auxiliary common wiring 280 corresponding to the auxiliary common contact hole 286 on the second protective layer 282 having the above structure, and the auxiliary common pattern 290 may form the same as the pixel electrode 289. It is formed of matter.

In the case of the opposing substrate 271 according to the modification of the second embodiment described above, the pixel electrode 289 and the common electrode 274 are formed on the same layer even though they are formed of different materials. The counter substrate is characterized in that it can be produced by a two mask process. This manufacturing method will be described later.

On the other hand, in the counter substrate of the transverse electric field type liquid crystal display device according to the second embodiment and the modification thereof having the above-described configuration, the common wiring and the common wiring in order to more certainly suppress the alkali ions eluted from the second soda lime glass as a base An inorganic insulating material, such as silicon oxide or titanium oxide or alkali ions, may be further formed between the electrode and the second soda lime glass, and a buffer layer may be further formed on the front surface.

In an array substrate, the overcoat layer may be removed from the gate and data pad parts so that a gate pad electrode is formed directly on the first soda lime glass.

It can be seen that the transverse electric field type liquid crystal display device according to the second embodiment having the above-described configuration has better performance than the first embodiment in terms of aperture ratio. In the first embodiment, the pixel pattern and the common wiring are formed on the same layer on the second soda lime glass of the opposing substrate by using a single metal material, so that these two components cannot overlap each other. While the wirings are formed apart from each other, in the case of the second embodiment, these pixel patterns and the common wiring are formed to overlap each other. As a result, the opening ratio in the pixel region is expanded so that the opening ratio and the bending are further improved.

Third Embodiment

 According to the third embodiment of the present invention, in the first and second embodiments, the black matrix formed on the array substrate corresponding to the thin film transistor is formed on the opposing substrate, and the storage capacitor is formed on the portion corresponding to the thin film transistor. As a result, the storage capacitor capacity is improved compared to the first and second embodiments without reducing the aperture ratio.

8A and 8B are plan views of one pixel region P of an array substrate and a counter substrate for a transverse electric field type liquid crystal display device according to a third embodiment of the present invention, respectively, and FIGS. 9A and 9B are respectively FIGS. 8A and 9B. 8B is a cross-sectional view of a portion cut along the cutting lines Xa-Xa and Xb-Xb. In this case, for the convenience of description, the same reference numerals are added to the same elements as in the second embodiment.

First, referring to FIG. 8A, the array substrate 305 has no distinction from the second embodiment (see FIG. 4A) except that the BM region is removed from the drawing by removing the black matrix.

Meanwhile, referring to FIG. 9A, which is a cross-sectional view, the first soda lime glass (base) is formed by removing the black matrix corresponding to the boundary of the switching region TrA or each pixel region P compared to the second embodiment (see FIG. 5A). A color filter layer 309 including red, green, and blue color filter patterns is formed on the 305, and an overcoat layer 311 having a flat surface is formed thereon. In addition, the overcoat layer 311 is formed on the gate and data lines 333 (not shown) that cross each other to define the pixel region P in the same manner as in the above-described second embodiment (see FIG. 5A). A thin film transistor Tr is connected to a wire (not shown) 333, and a thin film transistor Tr is formed, and contacts the drain electrode 337 of the thin film transistor Tr to cover the spacer 355 and the spacer 355. The connection pattern 358 is formed. In this case, the spacer 355 and the pixel connection pattern 358 may be integrally formed of one conductive material as described in the first embodiment.

Meanwhile, in the counter substrate 371 corresponding to this, referring to FIG. 8B, one end thereof corresponds to the gate wiring 317 of FIG. 8A of the array substrate 305 of FIG. 8A, and the auxiliary common wiring (not shown). The common wiring 373 connected by the plurality of transistors corresponds to the switching region (TrA in FIG. 8A) in which the thin film transistor Tr of the array substrate (305 in FIG. 8A) is formed compared to the counter substrate (271 in FIG. 4B) of the second embodiment. And a plurality of common electrodes 374 branching from the common wiring 373 and including the outermost common electrode 374a and the central common electrode 374b for each pixel region P. It is formed to be spaced apart from each other in parallel with the data line (333 in FIG. 8A) on (305 in FIG. 8A). At this time, the outermost common electrode 374a positioned at the outermost portion of the pixel region P among the common electrodes 374 is formed to overlap the data line 333 of FIG. 8A of the array substrate 305 of FIG. 8A. It is characteristic that there is.

In addition, a pixel pattern 388 connected to the pixel connection electrode 358 of FIG. 8A on the array substrate 305 of FIG. 8A overlaps the common wiring 373 for each pixel region P. In this case, the pixel pattern 388 is also extended to correspond to the switch region (TrA of FIG. 8A) on the array substrate 305 of FIG. 8A, and thus, the common pattern 373 overlaps with the common wiring 373. It features a wider storage capacitor (StgC).

Further, a plurality of pixel electrodes 389 are formed by branching from the pixel pattern 388 formed for each pixel region P, alternately parallel to the common electrode 374.

At this time, the characteristic of the third embodiment is an example of an opaque metal material that can block the transmission of light so that the common wiring 373 that is extended to correspond to the switching region (TrA of FIG. 8A) serves as a black matrix. For example, it is made of chromium, which is a metal material commonly used as a black matrix. In the first and second embodiments, a black matrix is formed on the array substrate to block light transmission at least corresponding to the switching region, so that the common wiring is formed of a material having conductive properties regardless of a transparent conductive material or an opaque metal material. However, in the third embodiment of the present invention, since the black matrix is not formed on the array substrate (FIG. 8A 305), the common wiring 373 may block light particularly for the switching region (TrA in FIG. 8A). It should play the role of a black matrix, which is characterized by being formed of an opaque metal material.

Looking at the cross-sectional structure of the counter substrate 305 having such a planar structure with reference to Figure 9b, a common wiring 373 is formed on the second soda lime glass 305 as a base as an opaque metal material, each A plurality of common electrodes 374 including the outermost common electrode 374a and the central common electrode 374b of FIG. 8B are formed in the pixel region P by being separated from the common wiring 373.

In addition, a second passivation layer 382 is formed to cover the common wiring 373 and the plurality of common electrodes 374. In this case, although not shown in the drawing, the second protective layer 382 is removed from a part of the auxiliary common wiring (not shown) which is connected to the end of the common wiring 373 in the non-display area, thereby making the auxiliary common contact hole (not shown). ). In this case, the second protective layer 382 is formed on the entire surface except for the auxiliary common contact hole (not shown), thereby preventing alkali ions eluted from the second soda lime glass 305 from being diffused into the liquid crystal layer. It is characterized by.

In addition, a pixel pattern 388 is formed on the second passivation layer 382 and overlaps the common wiring 373 using a metal material or a transparent conductive material for each pixel area P. In this case, the common wiring 373 and the pixel pattern 388 overlapping each other form a storage capacitor StgC together with the second protective layer 382 disposed therebetween. In addition, a plurality of pixel electrodes 389 are formed inside the pixel region P, alternately parallel to the plurality of common electrodes 374 by branching from the pixel pattern 388.

At this time, the cross-sectional structure of the auxiliary common wiring of the non-display area, the auxiliary common context hole, etc. has the same structure as that of the second embodiment and one modification thereof, and thus description thereof is omitted.

In the case of the opposing substrate for the transverse electric field type liquid crystal display device according to the third embodiment having such a structure, the pixel electrode and the common electrode have the same layer, that is, the second soda-lime glass or alkali ion elution suppression, as in the modification of the second embodiment. It may be formed on the buffer layer formed for.

Hereinafter, an array substrate for a transverse electric field type liquid crystal display device and a method of manufacturing the opposite substrate will be described.

<Method for Manufacturing Array Substrate>

The array substrate according to each embodiment of the present invention is the first to the third except that the pixel connection electrode extends and overlaps with the gate wiring at the front end in the first embodiment and that the black matrix is omitted in the third embodiment. Since the configuration of the embodiment and its modifications are the same, a description will be given with reference to Figs.

First, the black matrix 107 is formed to correspond to the switching region TrA by applying or depositing an opaque material such as black resin or chromium on the first soda lime glass 105 and patterning the same. In this case, the black matrix 107 may be further formed to correspond to the gate and data lines 117 and 133 of the pixel region P, in addition to the switching region TrA. The array according to the third embodiment may also be formed. In the case of a substrate (see FIG. 9A), the black matrix may be omitted.

Next, by applying and patterning red, green, and blue color resists sequentially on the black matrix 107, the color filter layer 109 including red, green, and blue color filter patterns sequentially repeated in each pixel area P, respectively. ) And successively apply a colorless transparent organic insulating material over the color filter layer 109 to form an overcoat layer 111 having a flat surface.

Next, a gate wiring (not shown) extending in one direction is formed by depositing and patterning a first metal material on the overcoat layer 111, and at the same time, a gate connected to the gate wiring (not shown) in each pixel region P. The electrode 119 is formed. In the non-display area NA, a common pad electrode (not shown) and a common pad connection electrode 123 are formed simultaneously with the gate pad electrode 121 connected to the gate line (not shown). The common pad electrode and the common pad connection electrode 123 may be omitted, and may be formed on the gate insulating layer 126 in the same process as the data pad electrode (not shown).

Next, a gate insulating layer 126 is formed over the gate wiring (not shown) and the gate electrode 119, and a semiconductor layer 129 is formed in each switching region TrA over the gate insulating layer 126. The thin film transistor Tr is completed by forming source and drain electrodes 135 and 137 spaced apart from each other on the semiconductor layer 129, connected to the drain electrode 137, and intersecting the gate wiring (not shown). A data line electrode 139 connected to the data line (not shown) is formed in the data line (not shown) defining the pixel area P and the non-display area NA, more precisely, in the data pad part DPA. In this case, when the common pad electrode (not shown) and the common pad connection electrode 123 are not formed on the same layer as the gate pad electrode 121, the data pad electrode 139 is disposed on the gate insulating layer 126 in the present step. It is formed in the same form as).

 Next, a first protective layer 142 is formed on the data line (not shown) and the thin film transistor Tr and patterned to expose the drain contact hole 145 to expose the drain electrode 137 and the non-display area. In the NA, the gate pad contact hole 147 exposing the gate pad electrode 121, the common pad electrode (not shown), the common pad connecting electrode 123, and the data pad electrode 139, respectively, and two common electrodes. A pad contact hole (not shown) 151 and a data pad contact hole 149 are formed.

Next, an organic insulating material is coated on the first passivation layer 142 and patterned to form a spacer 155 having a predetermined height corresponding to the drain electrode 137 exposed through the drain contact hole 145. Successively depositing and patterning a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) or a metal material to cover the spacers 155 and the drain electrode 137. The pixel connection electrode 158 is formed in contact with the gate pad electrode 121 through the gate pad contact hole 147, the common pad contact hole (not shown) 151, and the data pad contact hole 149, respectively. The auxiliary gate pad electrode 160 and the auxiliary common pad electrode (not shown) and the auxiliary common pad connection electrode 164 contacting the pad electrode (not shown), the common pad connecting electrode 123, and the data pad electrode 139, respectively. And auxiliary data pad electrodes 16 2) form.

In this case, in the first embodiment, the pixel connection electrode further forms a second portion (not shown) to extend to a portion where a gate wiring (not shown) formed at the front end defining each pixel region P is extended. The gate wiring overlapped with each other by further forming a third portion 158c extending from the second portion (not shown) to further extend along the front gate wiring (not shown) to overlap the front gate wiring 117. 117 and the third portion 158c of the pixel connection electrode 158 form a storage capacitor StgC.

In some embodiments, the pixel connection electrode 158 may be formed by uniting one conductive material without forming the spacer 155. In this case, the auxiliary gate pad electrode, the auxiliary common pad electrode, and the auxiliary data pad electrode may be formed to be very thick, but in order to prevent this, each pixel may be formed by different thicknesses by using techniques such as halftone exposure or diffraction exposure during patterning. The auxiliary gate pad electrode, the auxiliary common pad electrode, and the auxiliary data pad electrode formed in the non-display area may have a second thickness smaller than the first thickness so that the pixel connection pattern formed in the region has a first thickness. have.

<Method for Manufacturing Opposing Substrate According to First Embodiment and Modification Example thereof>

10A through 10B are cross-sectional views illustrating manufacturing processes of one pixel area P of the opposing substrate for a transverse electric field type liquid crystal display device according to the first exemplary embodiment of the present invention. 11A through 11B are cross-sectional views of manufacturing steps of the parts, and FIGS. 11A through 11B are manufacturing steps of the parts in which the auxiliary common wiring is formed corresponding to the non-display area of the counter substrate for the transverse electric field type liquid crystal display device according to the first embodiment of the present invention. It is a cross section.

First, as illustrated in FIGS. 10A and 11A, a common wiring (not shown) and each pixel extending in one direction by depositing and patterning a metal material or a transparent conductive material on the second soda lime glass 171 as a base are patterned. A plurality of common electrodes 174 connected to the common wiring (not shown) and including the outermost common electrode 174a and the central common electrode (not shown) are formed in the region P, and at the same time, each pixel region P A pixel pattern (not shown) spaced apart from the common wiring (not shown) and a plurality of pixel electrodes 177 are formed to branch from the pixel pattern (not shown) and alternate with the common electrode 174. At the same time, in the non-display area NA, the auxiliary common wiring 180 connecting all of the common wirings (not shown) is formed.

Meanwhile, in the modified example, an inorganic insulating material such as silicon oxide (SiO ₂ ) or titanium oxide (TiO ₂ ) or an organic insulating material such as benzocyclo is formed on the second soda lime glass before the common wiring is formed. A buffer layer for preventing alkali ion elution may be preferentially formed on the front surface with butene (BCB) or photo acryl.

Up to this step, the opposing substrate according to the modification of the first embodiment (characterized in that the buffer layer is formed) is completed. In this modified example, the pixel electrode and the common electrode are formed of the same conductive material on the buffer layer.

Meanwhile, in the case of the first embodiment, as shown in FIGS. 10B and 11B, the inorganic insulating material forming the buffer layer for suppressing the above-mentioned alkali ion elution on the entire surface of the common electrode 174 and the pixel electrode 177 is formed. The auxiliary common contact hole 186 and the auxiliary common contact hole 186 exposing a part of the auxiliary common wiring 180 by forming a second passivation layer 182 by depositing or applying an organic insulating material constituting the above-described buffer layer, and subsequently patterning it. The counter substrate 171 may be completed by forming the pixel contact hole 184 that partially exposes the pixel pattern (not shown) or the pixel electrode 177.

<Method for Manufacturing Counter Substrate According to Embodiments 2 and 3>

In the case of the opposing substrates according to the second and third embodiments of the present invention, only the metal material forming the common wiring with the size of the storage capacitor is different, but other stacked components are the same, so the opposing substrates according to the second embodiment of the present invention Only the manufacturing method of a board | substrate is demonstrated.

12A to 12C are cross-sectional views illustrating manufacturing processes of one pixel area of a counter substrate for a transverse electric field type liquid crystal display according to a second exemplary embodiment of the present invention, wherein FIG. 4B is taken along a cut line Vb-Vb. 13A to 13C are cross-sectional views of manufacturing steps, and FIGS. 13A to 13C are manufacturing steps for a part in which an auxiliary common wiring is formed corresponding to a non-display area NA of a counter substrate for a transverse electric field type liquid crystal display according to a second exemplary embodiment of the present invention. It is a cross section.

First, as illustrated in FIGS. 12A and 13A, the common wiring 273 and each pixel region extending in one direction by depositing and patterning a metal material or a transparent conductive material on the second soda lime glass 271 as a base are patterned. A plurality of common electrodes 274 connected to the common wiring 273 and including an outermost common electrode 274a and a central common electrode (not shown) are formed in (P), and are simultaneously formed in the non-display area NA. In this case, the auxiliary common wiring 280 connected to all of the common wiring 273 is formed. In this case, the third embodiment is characterized in that the common wiring is extended to the switching region, and must be formed of an opaque metal material, but not the transparent conductive material. This is because the black matrix must cover the abnormally driven light emitted through the switching region.

Meanwhile, as a modification, a buffer layer (not shown) may be further formed on the second soda lime glass 271 before the common electrode 274 and the common wiring 273 are formed.

Next, as shown in FIGS. 12B and 13B, an inorganic insulating material such as silicon oxide (SiO ₂ ) or titanium oxide is disposed on the entire surface of the common wiring 273, the common electrode 274, and the auxiliary common wiring 280. The second protective layer 282 is formed by depositing (TiO ₂ ), and the auxiliary common contact hole 286 exposing the auxiliary common wiring 280 is formed by patterning the second protective layer 282.

Next, as shown in FIGS. 12C and 13C, a metal pattern or a transparent conductive material is deposited on the entire surface and patterned to form a pixel pattern 288 overlapping the common wiring 273 for each pixel region P. By forming a pixel electrode 289 which alternates with the plurality of common electrodes 274 by branching from the pixel pattern 288, the opposing substrate 271 for a transverse electric field type liquid crystal display device according to the second embodiment of the present invention is formed. Complete In this case, the common wiring 273 and the pixel pattern 288 overlapping each other form a first and a second storage electrode with the second passivation layer 282 interposed therebetween to form a storage capacitor StgC.

Meanwhile, in the non-display area NA, the auxiliary common pattern contacting the auxiliary common wiring 280 through the auxiliary common contact hole 286 on the second protection layer 282 when the pixel pattern 288 is formed. 290 may be further formed, which may be omitted. In the case of the counter substrate according to the second and third embodiments of the present invention as described above, it can be seen that the mask is formed by performing three mask processes. The manufacturing method of the opposing board which concerns on an example is demonstrated.

<Method of manufacturing opposing substrate according to one modification of the second and third embodiments>

14A to 14I are cross-sectional views illustrating manufacturing steps of one pixel area P of a counter substrate for a transverse electric field type liquid crystal display device according to a modified example of the second embodiment of the present invention, and FIGS. The process cross-sectional view of the manufacturing step for the part where the auxiliary common wiring of the opposing substrate for the transverse electric field type liquid crystal display device according to the second embodiment of the present invention is formed.

First, as shown in FIGS. 14A and 15A, a common wiring 273 extending in one direction by depositing and patterning a metal material or a transparent conductive material on the second soda lime glass 271 as a base, and each pixel A plurality of common electrodes 274 connected to the common wiring 273 and including an outermost common electrode 274a and a central common electrode (not shown) are formed in the region P, and at the same time, the non-display area NA In the auxiliary common wiring 280 connected to all of the common wiring 274 is formed. In this case, in the modified example according to the third embodiment, the common wiring may be extended to correspond to the switching region (TrA of FIG. 8A) on the array substrate (see FIG. 8A). In this case, the common wiring may be formed of metal. Characterized by forming an opaque material of the material or transparent conductive material. This is because the black matrix must cover the light emitted through the switching region TrA.

As a modification, a buffer layer (not shown) may be further formed on the second soda lime glass 271 before the common electrode 274 and the common wiring 273 are formed.

Next, a second protective layer is formed by depositing an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or titanium oxide (TiO ₂ ), over the common wiring 273, the common electrode 274, and the auxiliary common wiring 280. Form 282.

Next, as shown in FIGS. 14B and 15B, a photoresist of photosensitive material is coated on the second protective layer 282 to form a first photoresist layer (not shown), and a slit exposure mask or halftone type. The exposure and development processes are performed using an exposure mask to correspond to the portion where the storage capacitor is to be formed, the first photoresist pattern 297a having the first thickness, and the portion where the pixel electrode and the auxiliary common contact hole are to be formed. For the photoresist, the photoresist is removed to expose the first protective layer 282, and corresponding to other regions, a second photoresist pattern 297b having a second thickness thicker than the first thickness is formed.

Next, as illustrated in FIGS. 14C and 15C, a pixel electrode is formed by etching and removing the second protective layer 282 exposed to the outside of the first and second photoresist patterns 297a and 297b. The pixel hole 283 is formed to correspond to the portion, and the auxiliary common contact hole 286 is formed to expose the auxiliary common wiring 280 to correspond to a part of the auxiliary common wiring 280.

Next, as shown in FIGS. 14D and 15D, ashing is performed on the second soda lime glass 271 in which the pixel hole 283 and the auxiliary common contact hole 286 are formed. The second protective layer 282 corresponding to the common wiring 273 is exposed by removing the first photoresist pattern 297a of FIG. 14C. At this time, the thickness of the photoresist pattern 297b of the second thickness is also reduced by the ashing, but still remains on the second protective layer 282.

Next, as shown in FIGS. 14E and 15E, the conductive material layer 287 is deposited on the entire surface by depositing a metal material or a transparent conductive material over the exposed second protective layer 282 and the second photoresist pattern 297b. To form. In this case, the conductive material layer 287 may be formed of indium tin oxide (ITO) or indium zinc oxide (IZO) as an example of a material having strong corrosion resistance and excellent step coverage.

Next, as shown in FIGS. 14F and 15F, the second photoresist layer having a relatively flat surface is coated with a thick photoresist on the conductive material layer 287 again regardless of the level of the lower components on the front surface. (299) is formed. In this case, the second photoresist layer 299 has a third thickness corresponding to the auxiliary common wiring 280 and the common wiring 273 due to the step difference between the conductive material layer 287, and corresponds to the remaining portion. To have a fourth thickness thinner than the third thickness. In addition, the pixel electrode has a fifth thickness thicker than the third thickness corresponding to the portion where the pixel electrode is to be formed.

Next, as shown in FIGS. 14G and 15G, ashing is performed to remove the fourth thickness portion by gradually removing the second photoresist layer (299 of FIG. 14F) at a predetermined ratio from the surface thereof. The conductive material layer 287 positioned on the second photoresist pattern 297b is exposed, and at the same time, the third and fourth photos respectively correspond to the second photoresist layer 299 of FIG. 14F of the third and fifth thicknesses. Resist patterns 299a and 299b are formed.

Next, as shown in FIGS. 14H and 15H, the conductive material layers (287 of FIGS. 14G and 15G) exposed to the outside of the remaining third and fourth photoresist patterns 299a and 299b are etched and removed. The second photoresist pattern 297b is exposed, and the pixel pattern 288 is formed on the second passivation layer 282 to correspond to the common wiring 273, and at the same time, the pixel hole 283 and the auxiliary common contact hole ( Corresponding to 286, the pixel electrode 289 and the auxiliary common pattern 290 are formed, respectively. In this case, the etching of the conductive material layer (287 of FIGS. 14G and 15G) may be performed by over-etching to correspond to the side surfaces of the third and fourth photoresist patterns 299a and 299b (287 of FIGS. 14G and 15G). ) To some extent.

 Next, as shown in FIGS. 14I and 15I, one modified example of the second embodiment of the present invention is removed by removing the exposed second, third and fourth photoresist patterns (297b, 299a and 299b in FIGS. 14H and 15H). A counter substrate 271 for the transverse electric field type liquid crystal display device is completed.

On the other hand, after forming the alignment film for the display area for the array substrate and the counter substrate fabricated as described above, and after the rubbing process, to form a seal pattern along the edge of the array substrate or the counter substrate, the seal After the liquid crystal is interposed between the alignment layers inside the pattern, the two substrates are bonded together to complete a transverse electric field type liquid crystal display device. At this time, bonding is performed such that the pixel connection pattern and the pixel electrode of each pixel region are in contact with each other, and the common auxiliary pattern and the auxiliary common pad electrode are connected to each other through conductive balls or silver dots included in the seal pattern. At this time, the alignment layer is removed by the heating and pressing in the process of contacting the pixel connection pattern and the pixel electrode in each pixel region, so that the pixel electrode and the pixel connection electrode become conductive.

The present invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit of the present invention.

1 is a perspective view of a general liquid crystal display device.

2A and 2B are plan views of one pixel region P of the array substrate and the opposing substrate of the transverse electric field type liquid crystal display device according to the first embodiment of the present invention, respectively.

3A is a cross-sectional view of a portion of a liquid crystal display according to a first embodiment of the present invention.

3B is a cross-sectional view of a data pad unit DPA having a data pad of a liquid crystal display according to a first embodiment of the present invention.

3C is a cross-sectional view of a storage region StgA in which a storage capacitor is formed in a pixel region P of a liquid crystal display according to a first exemplary embodiment of the present invention.

4A and 4B are plan views of one pixel region P of an array substrate and an opposing substrate of the transverse electric field type liquid crystal display device according to the second embodiment of the present invention, respectively.

FIG. 5A is a cross-sectional view of a portion taken along cut line Va-Va of FIG. 4A; FIG.

FIG. 5B is a sectional view of a portion taken along the cutting line Vb-Vb of FIG. 4b; FIG.

FIG. 6 is a cross-sectional view of a portion cut along a cutting line Vb-Vb shown in FIG. 5b in the counter substrate according to the modification of the second embodiment of the present invention; FIG.

FIG. 7 is a cross-sectional view of a portion of an opposing substrate according to a modification of the second embodiment of the present invention, in which an auxiliary common wiring corresponding to an auxiliary common contact hole is formed; FIG.

8A and 8B are plan views of one pixel area of an array substrate and a counter substrate for a transverse electric field type liquid crystal display device according to a third embodiment of the present invention, respectively.

9A and 9B are cross-sectional views of sections taken along cut lines Xa-Xa and Xb-Xb, respectively, of FIGS. 8A and 8B;

10A through 10B are cross-sectional views illustrating manufacturing processes of one pixel area of a counter substrate for a transverse electric field type liquid crystal display device according to a first exemplary embodiment of the present invention. Process cross-sectional view of manufacturing steps.

11A to 11B are cross-sectional views of manufacturing steps of portions in which auxiliary common wirings are formed corresponding to non-display areas of a counter substrate for a transverse electric field type liquid crystal display device according to a first embodiment of the present invention.

12A to 12C are cross-sectional views illustrating manufacturing processes of one pixel area of a counter substrate for a transverse electric field type liquid crystal display according to a second exemplary embodiment of the present invention, wherein FIG. 4B is taken along a cut line Vb-Vb. Process cross-sectional view of manufacturing steps.

13A to 13C are cross-sectional views illustrating manufacturing steps of portions in which an auxiliary common wiring is formed corresponding to a non-display area of a counter substrate for a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention.

14A to 14I are cross-sectional views illustrating manufacturing steps of one pixel area of a counter substrate for a transverse electric field type liquid crystal display device according to a modified example of the second embodiment of the present invention, and FIGS. 15A to 15I illustrate a second embodiment of the present invention. Step cross-sectional view of manufacturing steps for the part where the auxiliary common wiring of the opposing substrate for the transverse electric field type liquid crystal display device is formed according to one modification

 <Brief description of symbols for the main parts of the drawings>

101: transverse electric field type liquid crystal display device 105: array substrate (first soda lime glass)

107: black matrix 109: color filter layer

111: overcoat layer 119: gate electrode

121: gate pad electrode 123: common pad connection electrode

126: gate insulating film 129: semiconductor layer

135 source electrode 137 drain electrode

142: first protective layer 145: drain contact hole

147: gate pad contact hole 151: common pad contact hole

155: spacer 158: pixel connection electrode

160: auxiliary gate pad electrode 164: auxiliary common pad connection electrode

171: facing substrate (second soda lime glass)

174: common electrode 176: pixel pattern

177: pixel electrode 182: second protective layer

184: pixel contact hole 186: auxiliary common contact hole

192: liquid crystal layer 194: seal pattern

196: Challenge Ball

Claims (33)

A first substrate made of soda lime glass; A color filter layer formed on the first substrate; An overcoat layer formed on the color filter layer; Gate and data lines formed on the overcoat layer and crossing each other to define a plurality of pixel regions; A thin film transistor connected to the gate line and the data line in the switching area of each pixel area; A pixel connection electrode formed in contact with the drain electrode of the thin film transistor; A second substrate facing the first substrate and made of soda lime glass; A plurality of common electrodes and pixel electrodes formed alternately under the second substrate to correspond to the pixel areas; Liquid crystal layer interposed between the first and second substrate And the plurality of pixel electrodes and the drain electrode in each of the pixel regions are electrically connected by the pixel connection electrodes. The method of claim 1, And a common pad connection electrode electrically connected to the common electrode on the first substrate. The method of claim 2, In the second substrate, A common wiring connected to the plurality of common electrodes in the pixel area formed in the same row; An auxiliary common wiring connecting the common wiring; A pixel pattern connecting a plurality of pixel electrodes in each pixel area The transverse electric field type liquid crystal display device characterized by the above-mentioned. The method of claim 3, wherein And the common pad connection electrode and the auxiliary common wiring are connected to each other via silver dots or conductive balls in the seal pattern. The method of claim 3, wherein And the plurality of pixel electrodes and the common electrode are made of the same material on the same layer. The method of claim 5, wherein And the pixel connection electrode extends to a gate line at a front end thereof so that the pixel connection electrode and a front gate line overlapping each other form a storage capacitor. The method of claim 3, wherein And the plurality of pixel electrodes and the common electrode are made of different metal materials or transparent conductive materials. The method of claim 7, wherein And a plurality of pixel electrodes and a common electrode formed on different layers. The method of claim 8, An insulating layer having an auxiliary common contact hole for exposing the auxiliary common wiring on the front surface of the plurality of common electrodes, common wirings and auxiliary common wirings, and a pixel electrode and a pixel pattern under the insulating layer. Phosphorus field type liquid crystal display device. The method of claim 7, wherein And a plurality of pixel electrodes and a common electrode formed on the same layer. The method of claim 10, An insulating layer having a plurality of pixel holes and an auxiliary common contact hole exposing the auxiliary common wiring on the front surface of the plurality of common electrodes, the common wiring and the auxiliary common wiring, and a pixel pattern under the insulating layer. And the plurality of pixel electrodes are formed by filling the plurality of pixel holes with the same material constituting the pixel pattern. The method according to claim 9 or 11, And the common wiring and the pixel pattern overlap each other with the insulating layer interposed therebetween to form a storage capacitor. The method of claim 12, And the storage capacitor is formed to overlap the switching region in which the thin film transistor is formed. The method of claim 13, And the common wiring is made of an opaque metal material. The method of claim 1, And the common wiring is formed corresponding to the gate wiring. The method of claim 1, And an outermost common electrode positioned at the outermost part of the plurality of common electrodes in the pixel area in correspondence with the data line. The method of claim 1, And a black matrix is formed on the first substrate to correspond to the switching area under the color filter layer. The method of claim 1, And a buffer layer formed on an entire surface of the second substrate over the common electrode. The method of claim 1, And a columnar spacer made of an organic insulating material is formed between the pixel connection electrode and the exposed drain electrode, and the pixel connection electrode surrounds the space. Forming a color filter layer formed on the first substrate made of soda lime glass; Forming an overcoat layer on the color filter layer; Forming gate and data lines on the overcoat layer to cross each other to define a plurality of pixel regions; Forming a thin film transistor connected to the gate line and the data line in the switching area of each pixel area; Forming a first passivation layer over the thin film transistor, the first protective layer exposing the drain electrode of the thin film transistor; Forming a pixel connection electrode in contact with the exposed drain electrode over the first passivation layer; Forming a plurality of common electrodes and pixel electrodes which face each other on the inner side of the second substrate made of soda-lime glass and alternate with each other corresponding to each pixel region; Forming a liquid crystal layer between the first and second substrates; Forming a seal pattern on an edge of the first or second substrate and bonding the pixel connection pattern and the pixel electrode to be in contact with each other Method of manufacturing a transverse electric field type liquid crystal display device comprising a. The method of claim 20, Forming a plurality of common electrodes and pixel electrodes alternately corresponding to each pixel area on the inner side of the second substrate, Forming the plurality of common electrodes on an inner surface of the second substrate; Forming the second passivation layer on a front surface of the plurality of common electrodes; Forming the plurality of pixel electrodes on the second passivation layer Method of manufacturing a transverse electric field type liquid crystal display device comprising a. The method of claim 21, Forming the plurality of common electrodes, And forming a common wiring connecting the common electrode to the same layer and an auxiliary common wiring connected to the common wiring. The method of claim 22, The forming of the plurality of pixel electrodes may include: And forming a pixel pattern connecting the plurality of pixel electrodes in each pixel area over the second passivation layer. The method of claim 23, And the pixel pattern overlaps with the common wiring. The method of claim 24, And the pixel pattern and the common wiring are formed to cover the switching region. The method of claim 22, The forming of the second protective layer may further include forming an auxiliary common contact hole for exposing the auxiliary common wiring. The method of claim 22, And the pixel connection electrode is formed to overlap the gate wiring at the front end. The method of claim 20, Forming a plurality of common electrodes and pixel electrodes alternately corresponding to each pixel area on the inner side of the second substrate, Forming a plurality of common electrodes and common wirings connected to the plurality of common electrodes on the inner side of the second substrate, and auxiliary common wirings connected to the common wirings; Forming a second passivation layer on a front surface of the plurality of common electrodes; Forming a first photoresist pattern of a first thickness and a second photoresist pattern of a second thickness thicker than the first thickness over the second protective layer; By removing the second protective layer exposed outside the first and second photoresist patterns, an auxiliary common contact forming a plurality of pixel holes corresponding to a portion where the pixel electrode is to be formed and exposing the auxiliary common wiring in the figure Forming a hole; Removing the first photoresist pattern of the first thickness; Forming a conductive material layer over an entire surface of the second photoresist pattern; Forming a photoresist layer on the entire surface of the conductive material layer; Ashing the photoresist layer to expose the conductive material layer overlying the second photoresist pattern; Removing the exposed conductive material layer to form a plurality of pixel electrodes corresponding to the plurality of pixel holes and the common wiring, and the auxiliary common pattern corresponding to the auxiliary common contact holes; Removing the second photoresist pattern Method of manufacturing a transverse electric field type liquid crystal display device comprising a. The method of claim 20, And forming a black matrix on the first substrate in correspondence with the switching region before forming the color filter layer. The method of claim 20, And forming a columnar spacer on the exposed drain electrode before forming the pixel connection electrode. The method of claim 20, And forming a buffer layer on an entire surface of the second substrate to prevent alkali ion elution before forming the plurality of common electrodes. The method of claim 20, The forming of the gate line and the data line may further include forming a common pad connection electrode. The method of claim 32, Forming the seal pattern and bonding the pixel connection pattern and the pixel electrode to be in contact with each other, And causing the auxiliary common wiring and the pain pad connection electrode to be conductive through a silver dot or a conductive ball contained in the seal pattern.

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