CN109887912A - A kind of electrostatic discharge protective circuit towards the application of cold standby system bipolar integrated circuit - Google Patents
A kind of electrostatic discharge protective circuit towards the application of cold standby system bipolar integrated circuit Download PDFInfo
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- CN109887912A CN109887912A CN201910168453.8A CN201910168453A CN109887912A CN 109887912 A CN109887912 A CN 109887912A CN 201910168453 A CN201910168453 A CN 201910168453A CN 109887912 A CN109887912 A CN 109887912A
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- diode
- port
- bipolar transistor
- cold standby
- electrostatic discharge
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Abstract
The invention discloses a kind of electrostatic discharge protective circuits towards the application of cold standby system bipolar integrated circuit, and the present invention overcomes due to conventional diode electrostatic preventing structure, there are input/output end ports that cold standby application demand is unable to satisfy there are low impedance path to positive supply.Low impedance path is not present in two port positive supplies in the present invention, therefore chip can satisfy the demand of cold standby application.Meanwhile bipolar transistor Q1 and bipolar transistor Q2 accelerate releasing for electrostatic energy, can effectively improve the antistatic effect of chip.
Description
Technical field
The invention belongs to IC design fields, and in particular to one kind is answered towards cold standby system bipolar integrated circuit
Electrostatic discharge protective circuit.
Background technique
It is essential comprising modules in highly reliable bipolar Analogous Integrated Electronic Circuits chip that bipolar electrostatic, which protects circuit, is used for
Protect chip functions performance parameter unaffected after chip pin is by certain ESD stress.Currently, in aerospace etc.
Generally using the cold standby design side for having both highly reliable, long-life, low energy consumption and easy switching in highly reliable systems design area
Method.Cold standby application is the critical issue that the development of aerospace component and application must solve.Especially interface integrated circuit
The realization of cold standby function is the important content of such component production domesticization work.Device input/output with cold standby function
Port to positive supply must be in high-impedance state, leak electricity to avoid from input/output port to positive power source terminal.Therefore, in cold standby system
The electrostatic preventing structure for the chip applied in system need to be designed to that input/output end port to positive supply is high-impedance state.However, using such as
Tradition bipolar electrostatic protection circuit shown in FIG. 1 makes chip be unable to satisfy the requirement that cold standby designs.
As shown in Figure 1, the electrostatic discharge protective circuit between chip any two input/output end port and positive-negative power.Its
The electrostatic protection route of middle diode D1 and diode D2 composition port PO RT1, diode D3 and diode D4 form port
The electrostatic protection route of PORT2, VS+ are positive voltages, and VS- is negative supply voltage.
In the electrostatic protection route of PORT1, the negative terminal of diode D1 is connected with positive supply VS+, the negative terminal of diode D1 with
The negative terminal of PORT1 and diode D2 are connected, and the anode of diode D2 is connected with negative supply voltage.
In the electrostatic protection route of PORT2, the negative terminal of diode D3 is connected with positive supply VS+, the negative terminal of diode D3 with
The negative terminal of PORT2 and diode D4 are connected, and the anode of diode D4 is connected with negative supply voltage.
Referring to Fig.1, the work shape of the electrostatic protection route is illustrated with the electrostatic leakage access between PORT1 and each port
State.
When PORT1 is high potential, remaining port is low potential, diode D1 forward conduction can be passed through between VS+
Static electricity discharge energy can have two by the reversed Zener breakdown static electricity discharge energy of diode D2 between VS- between PORT2
Access carries out electrostatic energy and releases that (1. by the diode D1 forward conduction reversed Zener breakdown static electricity discharge of diode D3 simultaneously
Energy；2. passing through the reversed Zener breakdown of diode D2 while diode D4 forward conduction static electricity discharge energy).
When PORT1 is low potential, remaining port is high potential, the reversed Zener of diode D1 can be passed through between VS+
Puncture static electricity discharge energy, can have two between PORT2 by diode D2 forward conduction static electricity discharge energy between VS-
Access carries out electrostatic energy and releases that (1. by the diode D3 forward conduction reversed Zener breakdown static electricity discharge of diode D1 simultaneously
Energy；2. passing through the reversed Zener breakdown of diode D4 while diode D2 forward conduction static electricity discharge energy).
But electrostatic discharge protective circuit as shown in Figure 1 has the following disadvantages:
1. due to being positive diode structure between input/output end port (PORT1, PORT2) and positive supply VS+, input/
Output port to positive supply can not form high-impedance state, therefore be unable to satisfy the port identity requirement of cold standby system.
2. electrostatic energy is absorbed by diode Zener breakdown completely, if wanting to improve antistatic effect, the domain face of diode
Product will sharply increase.
From the above analysis as it can be seen that meet the port identity requirement of cold standby chip, need to invent a kind of general electrostatic guarantor
Protection circuit, it is ensured that input/output end port to positive supply formed high-impedance state, while chip area will not with electrostatic capacity enhance and
It sharply increases.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide one kind towards cold standby system bipolar integrated circuit application
Electrostatic discharge protective circuit, solve on different process platform with lesser chip area realization meet cold standby requirement chip
Electrostatic protection function.
In order to achieve the above object, the present invention includes positive supply VS+ and negative supply VS-, positive supply VS+ and negative supply VS-
Between be provided with diode D3, the negative terminal of diode D3 is connected with positive supply VS+, and the anode of diode D3 is connected with negative supply VS-,
Negative supply VS- connectivity port PORT1 and port PO RT2, are provided with quiet between port PO RT1 and port PO RT2 and negative supply VS-
Electric protection circuit；
Electrostatic discharge protective circuit between port PO RT1 and negative supply VS- includes diode D1, resistance R1 and bipolar transistor
The negative terminal of Q1, diode D1 are connected with port PO RT1, the anode of diode D1 and base stage, the resistance R1 of bipolar transistor Q1
One end connection, negative supply VS- is connected with the emitter of the other end of resistance R1 and bipolar transistor Q1, bipolar transistor
The collector of Q1 is connected with port PO RT1；
Electrostatic discharge protective circuit between port PO RT2 and negative supply VS- includes diode D2, resistance R2 and bipolar transistor
The negative terminal of Q2, diode D2 are connected with port PO RT2, the anode of diode D2 and base stage, the resistance R2 of bipolar transistor Q2
One end connection, negative supply VS- is connected with the emitter of the other end of resistance R2 and bipolar transistor Q2, bipolar transistor
The collector of Q2 is connected with port PO RT2.
Port PO RT1 and port PO RT2 is input/output terminal.
Negative supply VS- is common node.
Bipolar transistor Q1 and bipolar transistor Q2 is NPN type.
Diode D1 and diode D2 is zener diode.
Compared with prior art, the present invention overcomes due to conventional diode electrostatic preventing structure, there are input/output terminals
Mouth is unable to satisfy cold standby application demand there are low impedance path to positive supply.There is no low for two port positive supplies in the present invention
Access is hindered, therefore chip can satisfy the demand of cold standby application.Meanwhile bipolar transistor Q1 and bipolar transistor Q2 add
Fast releasing for electrostatic energy, can effectively improve the antistatic effect of chip.
Further, diode D1 of the invention and diode D2 is zener diode, can be by adjusting two poles
The breakdown voltage of pipe D1 and diode D2 meet the pressure-resistant demand of different process platform, so that the electrostatic preventing structure is possessed technique flat
Platform transplantability improves the flexibility and versatility of the electrostatic discharge protective circuit.
Detailed description of the invention
Fig. 1 is the circuit diagram of conventional diode structure electrostatic discharge protective circuit；
Fig. 2 is circuit diagram of the invention.
Specific embodiment
The present invention will be further described with reference to the accompanying drawing.
Referring to fig. 2, the present invention includes positive supply VS+ and negative supply VS-, is provided with two between positive supply VS+ and negative supply VS-
The negative terminal of pole pipe D3, diode D3 are connected with positive supply VS+, and the anode of diode D3 is connected with negative supply VS-, negative supply VS-
Connectivity port PORT1 and port PO RT2 is provided with electrostatic protection electricity between port PO RT1 and port PO RT2 and negative supply VS-
Road；
Electrostatic discharge protective circuit between port PO RT1 and negative supply VS- includes diode D1, resistance R1 and bipolar transistor
The negative terminal of Q1, diode D1 are connected with port PO RT1, the anode of diode D1 and base stage, the resistance R1 of bipolar transistor Q1
One end connection, negative supply VS- is connected with the emitter of the other end of resistance R1 and bipolar transistor Q1, bipolar transistor
The collector of Q1 is connected with port PO RT1；
Electrostatic discharge protective circuit between port PO RT2 and negative supply VS- includes diode D2, resistance R2 and bipolar transistor
The negative terminal of Q2, diode D2 are connected with port PO RT2, the anode of diode D2 and base stage, the resistance R2 of bipolar transistor Q2
One end connection, negative supply VS- is connected with the emitter of the other end of resistance R2 and bipolar transistor Q2, bipolar transistor
The collector of Q2 is connected with port PO RT2.
Port PO RT1 and port PO RT2 is input/output terminal, and negative supply VS- is common node, bipolar transistor Q1
It is NPN type with bipolar transistor Q2, diode D1 and diode D2 are zener diode.
Illustrate the working condition of the electrostatic protection route with electrostatic leakage access between port PO RT1 and each port below.
When port PO RT1 is high potential, remaining port is low potential, diode D1 can be passed through between negative supply VS-
Zener breakdown, the pressure drop on resistance R1 promote the base stage of bipolar transistor Q1 and emitter to open rapidly, bipolar transistor
Q1 starts to work, and electrostatic energy is released by the bipolar transistor Q1 with enlarging function to the port negative supply VS-.With just
Can be worked by diode D1, resistance R1 and bipolar transistor Q1 between power supply VS+ again will by diode D3 forward conduction
Electrostatic energy is released.It can be worked by diode D1, resistance R1 and bipolar transistor Q1 again by double between port PO RT2
The collector-substrate junction forward conduction of polar transistor Q2 releases electrostatic energy.
When port PO RT1 is low potential, remaining port is high potential, bipolarity crystalline substance can be passed through between negative supply VS-
The collector-substrate junction forward conduction of body pipe Q1 releases electrostatic energy.It can be neat by diode D3 between positive supply VS+
Receive breakdown, the collector-substrate junction forward conduction of bipolar transistor Q1 releases electrostatic energy.It can be between port PO RT2
It is worked by diode D2, resistance R2 and bipolar transistor Q2 again by the positive guide of collector-substrate junction of bipolar transistor Q1
It is logical that electrostatic energy is released.
The present invention is capable of providing effective electrostatic leakage access, lets out the electrostatic energy between any two port is cracking
It puts, avoiding input/output end port to positive power source terminal has low impedance path, meets the needs of cold standby application.
Thought of the invention can adjust diode D1, diode D2 and diode D3 breakdown voltage under specific environment
To be suitable for different process platform, the chip area of bipolar transistor Q1 and bipolar transistor Q2 are designed to meet
Different antistatic indexs, above-mentioned institute's content of the discussions only show one of concrete mode of the invention, are not intended to limit this hair
Bright range.
Claims (5)
1. a kind of electrostatic discharge protective circuit towards the application of cold standby system bipolar integrated circuit, which is characterized in that including positive electricity
Source VS+ and negative supply VS- is provided with diode D3, the negative terminal and positive supply of diode D3 between positive supply VS+ and negative supply VS-
VS+ is connected, and the anode of diode D3 is connected with negative supply VS-, negative supply VS- connectivity port PORT1 and port PO RT2, port
Electrostatic discharge protective circuit is provided between PORT1 and port PO RT2 and negative supply VS-；
Electrostatic discharge protective circuit between port PO RT1 and negative supply VS- includes diode D1, resistance R1 and bipolar transistor Q1,
The negative terminal of diode D1 is connected with port PO RT1, and the one of the base stage of the anode of diode D1 and bipolar transistor Q1, resistance R1
End connection, negative supply VS- are connected with the emitter of the other end of resistance R1 and bipolar transistor Q1, bipolar transistor Q1's
Collector is connected with port PO RT1；
Electrostatic discharge protective circuit between port PO RT2 and negative supply VS- includes diode D2, resistance R2 and bipolar transistor Q2,
The negative terminal of diode D2 is connected with port PO RT2, and the one of the base stage of the anode of diode D2 and bipolar transistor Q2, resistance R2
End connection, negative supply VS- are connected with the emitter of the other end of resistance R2 and bipolar transistor Q2, bipolar transistor Q2's
Collector is connected with port PO RT2.
2. a kind of electrostatic discharge protective circuit towards the application of cold standby system bipolar integrated circuit according to claim 1,
It is characterized in that, port PO RT1 and port PO RT2 is input/output terminal.
3. a kind of electrostatic discharge protective circuit towards the application of cold standby system bipolar integrated circuit according to claim 1,
It is characterized in that, negative supply VS- is common node.
4. a kind of electrostatic discharge protective circuit towards the application of cold standby system bipolar integrated circuit according to claim 1,
It is characterized in that, bipolar transistor Q1 and bipolar transistor Q2 are NPN type.
5. a kind of electrostatic discharge protective circuit towards the application of cold standby system bipolar integrated circuit according to claim 1,
It is characterized in that, diode D1 and diode D2 is zener diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910168453.8A CN109887912B (en) | 2019-03-06 | 2019-03-06 | Electrostatic protection circuit for application of bipolar integrated circuit of cold backup system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910168453.8A CN109887912B (en) | 2019-03-06 | 2019-03-06 | Electrostatic protection circuit for application of bipolar integrated circuit of cold backup system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109887912A true CN109887912A (en) | 2019-06-14 |
| CN109887912B CN109887912B (en) | 2021-07-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910168453.8A Active CN109887912B (en) | 2019-03-06 | 2019-03-06 | Electrostatic protection circuit for application of bipolar integrated circuit of cold backup system |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060268477A1 (en) * | 2004-09-16 | 2006-11-30 | Camp Benjamin V | Apparatus for ESD protection |
| CN101859766A (en) * | 2009-04-13 | 2010-10-13 | 苏州芯美微电子科技有限公司 | Novel NMOS (N-channel Metal Oxide Semiconductor) clamping between power VDD (Voltage Drain Drain) and IO (Input/Output) pin and application method thereof |
| CN106682331A (en) * | 2016-12-30 | 2017-05-17 | 北京厚德微电技术有限公司 | Extraction of static protection structure of integrated circuit layout and intelligent design verifying method |
| CN107408555A (en) * | 2015-03-16 | 2017-11-28 | 亚德诺半导体集团 | Apparatus and method for overvoltage protection |
| CN107818976A (en) * | 2016-09-14 | 2018-03-20 | 瑞萨电子株式会社 | Semiconductor devices |
-
2019
- 2019-03-06 CN CN201910168453.8A patent/CN109887912B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060268477A1 (en) * | 2004-09-16 | 2006-11-30 | Camp Benjamin V | Apparatus for ESD protection |
| CN101859766A (en) * | 2009-04-13 | 2010-10-13 | 苏州芯美微电子科技有限公司 | Novel NMOS (N-channel Metal Oxide Semiconductor) clamping between power VDD (Voltage Drain Drain) and IO (Input/Output) pin and application method thereof |
| CN107408555A (en) * | 2015-03-16 | 2017-11-28 | 亚德诺半导体集团 | Apparatus and method for overvoltage protection |
| CN107818976A (en) * | 2016-09-14 | 2018-03-20 | 瑞萨电子株式会社 | Semiconductor devices |
| CN106682331A (en) * | 2016-12-30 | 2017-05-17 | 北京厚德微电技术有限公司 | Extraction of static protection structure of integrated circuit layout and intelligent design verifying method |
Non-Patent Citations (1)
| Title |
|---|
| 魏海龙 等: "悬臂梁式硅微加速度传感器的设计仿真", 《微电子学与计算机》 * |
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