CN109887818A - A kind of electron beam device and preparation method thereof - Google Patents
A kind of electron beam device and preparation method thereof Download PDFInfo
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 110
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 98
- 239000002131 composite material Substances 0.000 claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
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- 230000010287 polarization Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005549 size reduction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
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Abstract
This disclosure relates to a kind of electron beam device and preparation method thereof, it include: the GaN/AlGaN composite layer of semiconductor substrate and semiconductor substrate surface, one end of GaN/AlGaN composite layer is equipped with cathode, the other end of GaN/AlGaN composite layer is equipped with anode, and modulation input terminal and modulation output end are equipped between cathode and anode.Since GaN/AlGaN composite layer is the semiconductor material being made of the lattice atoms of marshalling, when applying voltage bias between the anode and cathode, the electronic beam current generated at the heterojunction boundary of GaN/AlGaN composite layer navigates in these lattice atoms, its drift velocity will be extremely limited, therefore, range ability of the electronic beam current within a time cycle just correspondingly reduces, in this way, the size of electron beam device can greatly be reduced, the micromation for realizing electron beam device, solves the problems, such as that conditional electronic beam device size is excessive.
Description
Technical field
This disclosure relates to electronic technology field, and in particular, to a kind of electron beam device and preparation method thereof.
Background technique
The electronic technology of early stage all relies on electron tube, and electron tube is made of an electron gun and several coordination electrodes, institute
There is component to be encapsulated in the glass tube of a vacuum.When work, applies specific voltage bias at electron tube both ends, enable electron tube
Cathode issue electron beam, it is nigh accelerate pole tension traction under, formed electronic beam current (also known as electronics note), the electron beam
Stream is advanced in a vacuum, eventually arrives at the anode of electron tube, and form electric current in outer circuit loop.
By taking velocity modulation electron tube as an example, above-mentioned electronic beam current can receive near cathode, pass through in the distance that it is advanced
Narrow gap is coupled into the microwave signal come and is modulated.Since electron beam has the characteristic of clustering, electron beam can be carried out
Velocity modulation is transformed into density modulation again after drifting about.When the beam propagation of clustering meets into body and output cavity narrow gap, electricity
Kinetic energy is converted by the narrow gap and gives output cavity microwave field by beamlet, completes microwave oscillation or amplification.
In terms of electrical characteristics, the modulating characteristic of traditional electric vacuum tube, the indexs such as linearity are all well that main problem exists
Bigger in size, power consumption is also big.By taking the computer of the First in the world ENIAC being all made of electric vacuum tube as an example,
ENIAC is a huge monster, has used more than 18000 electric vacuum tubes, 1500 relays, 140 kilowatts of power, weight 30
Ton takes up an area about 170 square metres, and arithmetic speed only has 5000 times per second.
Electric vacuum tube occupies the reason of biggish size, space and is primarily due in glass tube with vacuum, the row of electron beam
It is very fast into speed.Using electron beam velocity as the 1/10 of the light velocity, that is, 3 × 107M/s estimated, enables the microwave frequency be
1GHz, that is, a cycle time are 10-9S, then a cycle electron beam travel distance is 3cm, so traditional electrovacuum
Pipe, is usually all the magnitude of several cm or more than ten cm.
Summary of the invention
In order to overcome the problems referred above, purpose of this disclosure is to provide a kind of electron beam devices and preparation method thereof.
To achieve the goals above, according to the first aspect of the embodiments of the present disclosure, a kind of electron beam device is provided, comprising:
One end of the GaN/AlGaN composite layer of semiconductor substrate and the semiconductor substrate surface, the GaN/AlGaN composite layer is set
There is cathode, the other end of the GaN/AlGaN composite layer is equipped with anode, and modulation input is equipped between the cathode and the anode
End and modulation output end.
Optionally, the surface of the GaN/AlGaN composite layer is equipped with insulating layer, and the modulation input terminal and the modulation are defeated
Outlet includes: in the window opened up on the insulating layer that the cathode and the anode are pre-determined distance respectively, and in institute
State the metal layer deposited in window, wherein the metal layer and the GaN/AlGaN composite layer form Metals-semiconductor contacts.
Optionally, the surface of the GaN/AlGaN composite layer is equipped with insulating layer, and the modulation input terminal and the modulation are defeated
Outlet includes: in window, the window opened up on the insulating layer that the cathode and the anode are pre-determined distance respectively
The metal layer deposited on the gate dielectric layer of interior deposition and the gate dielectric layer, wherein the bottom of the window extends to described
In GaN/AlGaN composite layer.
Optionally, the modulation input terminal, the modulation output end include one or more.
Optionally, the GaN/AlGaN composite layer is by one or more GaN layer and one or more AlGaN
Layer composition composite layer, wherein the GaN layer with a thickness of 10~2000 nanometers, the AlGaN layer is received with a thickness of 1~50
Rice, the distance between the anode and the cathode are 1 micron~300 millimeters.
Optionally, the insulating layer includes Si3N4Insulating layer, the width of the window are 0.5~50 micron, described default
Distance is 1~50 micron.
According to the second aspect of an embodiment of the present disclosure, a kind of electron beam device, including the first electron beam device and are provided
Two electron beam devices, first electron beam device and second electron beam device include embodiment of the present disclosure first aspect institute
The electron beam device stated, first electron beam device and second electron beam device are same semi-conductive substrate, described the
The modulation output end of one electron beam device is connected with the modulation input terminal of second electron beam device.
According to the third aspect of an embodiment of the present disclosure, a kind of production method of electron beam device is provided, comprising: with semiconductor
Material is bottom liner, deposits GaN/AlGaN composite layer on the surface of the substrate；In one end system of the GaN/AlGaN composite layer
Make cathode, makes anode in the other end of the GaN/AlGaN composite layer；Modulation is made between the cathode and the anode
Input terminal and modulation output end.
Optionally, in the surface depositing insulating layer of the GaN/AlGaN composite layer, respectively apart from the cathode and described
Anode obtains the modulation input terminal to open up window, and the deposited metal layer in the window on the insulating layer of pre-determined distance
With the modulation output end, wherein the metal layer and the GaN/AlGaN composite layer form Metals-semiconductor contacts.
Optionally, in the surface depositing insulating layer of the GaN/AlGaN composite layer, respectively apart from the cathode and described
Anode deposits gate dielectric layer, and on the gate dielectric layer to open up window on the insulating layer of pre-determined distance in the window
Deposited metal layer obtains the modulation input terminal and the modulation output end.
Through the above technical solutions, include: semiconductor substrate and the semiconductor substrate surface GaN/AlGaN it is compound
Layer, one end of the GaN/AlGaN composite layer are equipped with cathode, and the other end of the GaN/AlGaN composite layer is equipped with anode, the cathode and
Modulation input terminal and modulation output end are equipped between the anode.
At the heterojunction boundary of GaN/AlGaN composite layer, due to piezoelectricity and spontaneous polarization, it will generate high density
Positive net bound charge, these positive charges will attract negative electrical charge, so that it is very high to form surface density at heterojunction boundary
Two-dimensional electron gas.When applying voltage bias between a cathode and an anode, which is formed from cathode to anode
Directional drift movement.Since GaN/AlGaN composite layer is the semiconductor material being made of the lattice atoms of marshalling, electron beam
When stream navigates within these lattice atoms, drift velocity will be extremely limited, and therefore, the electronic beam current is in a time
Range ability in period just correspondingly reduces, in this way, the size of electron beam device can greatly be reduced, realizes electron beam
The micromation of device solves the problems, such as that traditional electric vacuum tube is oversized.Meanwhile external electrical is introduced by modulation input terminal
Signal can be modulated the electronic beam current in electron beam device.
Other feature and advantage of the disclosure will the following detailed description will be given in the detailed implementation section.
Detailed description of the invention
Attached drawing is and to constitute part of specification for providing further understanding of the disclosure, with following tool
Body embodiment is used to explain the disclosure together, but does not constitute the limitation to the disclosure.In the accompanying drawings:
Fig. 1 is a kind of structural schematic diagram of electron beam device shown according to an exemplary embodiment；
Fig. 2 is the structural schematic diagram of another electron beam device shown according to an exemplary embodiment；
Fig. 3 is a kind of flow chart of the production method of electron beam device shown according to an exemplary embodiment；
Fig. 4 is the flow chart of the production method of another electron beam device shown according to an exemplary embodiment.
Specific embodiment
It is described in detail below in conjunction with specific embodiment of the attached drawing to the disclosure.It should be understood that this place is retouched
The specific embodiment stated is only used for describing and explaining the disclosure, is not limited to the disclosure.
To solve the problems, such as that conditional electronic beam device size is excessive, the disclosure provides a kind of electron beam device and its production side
Method, at the heterojunction boundary of GaN/AlGaN composite layer, due to piezoelectricity and spontaneous polarization, it will generation is highdensity just
Net bound charge, these positive charges will attract negative electrical charge, so that forming the very high two dimension of surface density at heterojunction boundary
Electron gas.When applying voltage bias between a cathode and an anode, which is formed orientation from cathode to anode
Drift motion.Since GaN/AlGaN composite layer is the semiconductor material being made of the lattice atoms of marshalling, electron beam is flowed through
When these lattice atoms, drift velocity will be extremely limited row, and therefore, the electronic beam current is in a time cycle
Interior range ability just correspondingly reduces, in this way, the size of electron beam device can greatly be reduced, realizes electron beam device
Micromation, solve the problems, such as that traditional electric vacuum tube is oversized.Meanwhile external telecommunications is introduced by modulation input terminal
Number, the electronic beam current in electron beam device can be modulated.
Content of this disclosure is described in detail below by specific embodiment.
Fig. 1 is a kind of structural schematic diagram of electron beam device shown according to an exemplary embodiment, as shown in Figure 1, should
Electron beam device includes: the GaN/AlGaN composite layer of semiconductor substrate 1 and 1 surface of semiconductor substrate, the GaN/AlGaN
One end of composite layer is equipped with cathode 2, and the other end of the GaN/AlGaN composite layer is equipped with anode 3, between the cathode 2 and the anode 3
Equipped with modulation input terminal 4 and modulation output end 5.
In the present embodiment, at the heterojunction boundary of GaN/AlGaN composite layer, due to piezoelectricity and spontaneous polarization,
Highdensity positive net bound charge will be generated, these positive charges will attract negative electrical charge, so that the GaN at heterojunction boundary
The side of layer forms the very high two-dimensional electron gas of surface density.It is inclined to apply voltage between the cathode and anode at semiconductor substrate both ends
When setting, such as 10V voltage, which moves with regard to the directional drift of shape from cathode to anode.Since GaN/AlGaN is compound
Layer is the semiconductor material being made of the lattice atoms of marshalling, when electronic beam current navigates within these lattice atoms, drift
Speed will be extremely limited, e.g., with drift velocity for 1 × 103M/s is estimated, in a time cycle 10-9In s
The travel distance of electron beam is 1 micron, it can be seen that, within a time cycle, the range ability of electronic beam current is greatly reduced
, thus the micro- of electron beam device can be realized by electron beam device from the size reduction of Centimeter Level to micron-sized size
Type solves the problems, such as that traditional electric vacuum tube is oversized.
Wherein, GaN/AlGaN composite layer is the composite layer that GaN layer and AlGaN layer form, which may include one
Or any combination of multiple AlGaN layers and one or more GaN layer, the disclosure to this with no restriction.For example, GaN/
AlGaN composite layer may include an AlGaN layer and a GaN layer, wherein AlGaN layer can be set on the upper layer of GaN layer,
The lower layer in GaN layer can be set.
The modulation input terminal can be used for input modulating signal or blanking voltage, which is used for in electron beam device
Electronic beam current be modulated, such as the movement velocity of modulated electron beam stream, make electronic beam current that clustering occur.The blanking voltage is available
In the movement of electronic beam current in cutting electron beam device.Correspondingly, electronic beam current modulated signal or blanking voltage are adjusted
Electric signal after system is exported from the modulation output end.
Optionally, the GaN layer with a thickness of 10~2000 nanometers, the AlGaN layer with a thickness of 1~50 nanometer, the anode
The distance between the cathode is 1 micron~300 millimeters.Wherein, in AlGaN layer, the component of Al can be 28% in AlGaN.
On the basis of electron beam device shown in Fig. 1, the disclosure provides the modulation input terminal and tune of two kinds of different structures
Output end processed, respectively as shown in example one and example two.
Example one:
The surface of the GaN/AlGaN composite layer is equipped with insulating layer, the modulation input terminal and the modulation output end include: respectively away from
From the window opened up on the insulating layer that the cathode and the anode are pre-determined distance, and the metal layer deposited in the window,
In, the metal layer and the GaN/AlGaN composite layer form Metals-semiconductor contacts.
Wherein, which includes but is not limited to Si3N4Insulating layer, the width of the window are 0.5~50 micron, this is default
Distance is 1~50 micron.For example, when making modulation input terminal and modulation output end according to the present embodiment, it can be respectively in distance
The Si that cathode and anode are 20 microns3N4Si is etched away on insulating layer3N4, 0.5 micron of wide window is formed, is sunk in window
Product metal layer, so that metal layer and GaN/AlGaN composite layer form Metals-semiconductor contacts, to obtain modulation input terminal and tune
Output end processed.
Example two:
The surface of the GaN/AlGaN composite layer is equipped with insulating layer, the modulation input terminal and the modulation output end include: respectively away from
From the window opened up on the insulating layer that the cathode and the anode are pre-determined distance, the gate dielectric layer and the grid that deposit in the window
The metal layer deposited on dielectric layer, wherein the bottom of the window extends in the GaN/AlGaN composite layer.
Wherein, which includes but is not limited to Si3N4Insulating layer, the gate dielectric layer may include SiO2Layer, the SiO2Layer
With a thickness of 1~500 nanometer, which is 1~50 micron.For example, making modulation input terminal and tune according to the present embodiment
It can be respectively to etch away Si at 20 microns apart from cathode and anode when output end processed3N4, continue to be etched down to GaN/ later
In AlGaN composite layer, 0.5 micron of wide window is formed, the SiO of 10 nanometer thickness can be deposited in the window2Layer, SiO2It sinks on layer
Product metal layer, to obtain modulation input terminal and modulate output end.
It should be noted that firstly, the electron beam device of the disclosure may include modulation input terminal described in example one and
Output end is modulated, alternatively, including modulation input terminal described in example two and modulation output end.
Secondly, the electron beam device of the disclosure may include one or more modulation input terminal and one or more tune
Output end processed, wherein multiple modulation input terminal can access different external input signals according to demand, such as can be used for inputting tune
Signal processed, each modulated signal can be it is identical, be also possible to it is different so that the electronic beam current in electron beam device passes through
Multiple modulated signal common modulations, the modulation input terminal can be used for input blanking voltage.It is inputted in this way by multiple modulation
End connects multiple external inputs, carries out multi-source modulation to electron beam device, and the function of electron beam device may make to have diversification.
Correspondingly, after external input signal regulates and controls electronic beam current, multiple modulation output end can be used for selecting to export different
Electric signal.
For example, the electron beam device may include 2 modulation input terminals, one of modulation input terminal may be disposed at distance yin
At 20 microns of pole, it is used for input modulating signal, another modulation input terminal to may be disposed at 25 microns of cathode, alternately
Modulation input terminal, when needed, which can be used for input modulating signal, or for inputting blanking voltage.
Fig. 2 is the structural schematic diagram of another electron beam device shown according to an exemplary embodiment, as shown in Fig. 2,
Including the first electron beam device 10 and the second electron beam device 11, first electron beam device 10 and the second electron beam device 11 packet
Electron beam device shown in FIG. 1 is included, first electron beam device 10 and second electron beam device 11 are same semi-conductive substrate,
The modulation output end 5 of first electron beam device 10 and the modulation input terminal 4 of second electron beam device 11 connect.
In this way, passing through the cascade of front and back stages the first electron beam device and the second electron beam device, modulated signal can be mentioned
For bigger gain amplifier.Simultaneously as to be able to carry out technique integrated for electron beam device described in the disclosure, it can be to electronics
Beam device carries out micromation production, therefore, the disclosure can be realized on same semiconductor substrate by two electron beam devices into
Row cascade, solves the problems, such as that two electron beam devices cannot be made in the same glass tube with vacuum in the prior art.
Fig. 3 is a kind of flow chart of the production method of electron beam device shown according to an exemplary embodiment, the production
Method includes:
S301, using semiconductor material as bottom liner, the substrate surface deposit GaN/AlGaN composite layer.
It in this step,, will due to piezoelectricity and spontaneous polarization at the heterojunction boundary of GaN/AlGaN composite layer
Highdensity positive net bound charge can be generated, these positive charges will attract negative electrical charge, so that the GaN layer at heterojunction boundary
Side formed the very high two-dimensional electron gas of surface density.Apply voltage bias between the cathode and anode at semiconductor substrate both ends
When, such as 10V voltage, which moves with regard to the directional drift of shape from cathode to anode.Due to GaN/AlGaN composite layer
It is the semiconductor material being made of the lattice atoms of marshalling, when electronic beam current navigates within these lattice atoms, drift speed
Degree will be extremely limited, e.g., with drift velocity for 1 × 103M/s is estimated, in a time cycle 10-9It is electric in s
The travel distance of beamlet is 1 micron, it can be seen that within a time cycle, the range ability of electronic beam current is substantially reduced,
Thus the miniature of electron beam device can be realized by electron beam device from the size reduction of Centimeter Level to micron-sized size
Change, solves the problems, such as that traditional electric vacuum tube is oversized.
Wherein, GaN/AlGaN composite layer is the composite layer that GaN layer and AlGaN layer form, which may include one
Or any combination of multiple AlGaN layers and one or more GaN layer, the disclosure to this with no restriction.For example, GaN/
AlGaN composite layer may include an AlGaN layer and a GaN layer, wherein AlGaN layer can be set on the upper layer of GaN layer,
The lower layer in GaN layer can be set.
Optionally, GaN layer with a thickness of 10~2000 nanometers, the AlGaN layer with a thickness of 1~50 nanometer, wherein
In AlGaN layer, the component of Al can be 28% in AlGaN.
S302, cathode is made in one end of the GaN/AlGaN composite layer, in the other end system of the GaN/AlGaN composite layer
Make anode.
When anode and cathode applies external voltage biasing, electronic beam current just will form the directional drift from cathode to anode
Movement.Optionally, the distance between the anode and cathode may be configured as 1 micron~300 millimeters.
S303, production modulation input terminal and modulation output end between the cathode and the anode.
The modulation input terminal can be used for input modulating signal or blanking voltage, which is used for in electron beam device
Electronic beam current be modulated, such as the movement velocity of modulated electron beam stream, make electronic beam current that clustering occur.The blanking voltage is available
In the movement of cutting electronic beam current.Correspondingly, the modulation output end is for exporting electronic beam current modulated signal or cut-off electricity
Pressure carries out modulated electric signal.
Fig. 4 is a kind of flow chart of the production method of the electron beam device shown according to another exemplary embodiment, the party
Method includes:
S401, using semiconductor material as bottom liner, the substrate surface deposit GaN/AlGaN composite layer.
In this step, it due to piezoelectricity and spontaneous polarization, is generated at the heterojunction boundary of GaN/AlGaN composite layer
Highdensity positive net bound charge, these positive charges will attract negative electrical charge so that at heterojunction boundary GaN layer side
Form the very high two-dimensional electron gas of surface density.When applying voltage bias between the cathode and anode at semiconductor substrate both ends, such as
10V voltage, the two-dimensional electron gas are moved with regard to the directional drift of shape from cathode to anode.Due to GaN/AlGaN composite layer be by
The semiconductor material that the lattice atoms of marshalling are constituted, when electronic beam current navigates within these lattice atoms, drift velocity will
It will receive great limitation, e.g., with drift velocity for 1 × 103M/s is estimated, in a time cycle 10-9Electron beam in s
Travel distance be 1 micron, it can be seen that, the range ability of electronic beam current substantially reduces within a time cycle, in this way
The micromation of electron beam device can be realized by electron beam device from the size reduction of Centimeter Level to micron-sized size, solve
It has determined the oversized problem of traditional electric vacuum tube.
Wherein, GaN/AlGaN composite layer is the composite layer that GaN layer and AlGaN layer form, which may include one
Or any combination of multiple AlGaN layers and one or more GaN layer, the disclosure to this with no restriction.For example, GaN/
AlGaN composite layer may include an AlGaN layer and a GaN layer, wherein AlGaN layer can be set on the upper layer of GaN layer,
The lower layer in GaN layer can be set.
Optionally, GaN layer with a thickness of 10~2000 nanometers, the AlGaN layer with a thickness of 1~50 nanometer, wherein
In AlGaN layer, the component of Al can be 28% in AlGaN.
S402, cathode is made in one end of the GaN/AlGaN composite layer, in the other end system of the GaN/AlGaN composite layer
Make anode.
When anode and cathode applies external voltage biasing, electronic beam current just will form the directional drift from cathode to anode
Movement.
Optionally, the distance between the anode and cathode may be configured as 1 micron~300 millimeters.
The disclosure provides production method of two different modulation input terminals with output end is modulated, and step S403, S404 is
To the explanation of a kind of modulation input terminal and the production method for modulating output end, step S405, S406 is to another kind modulation input
The explanation of the production method of end and modulation output end.In the specific implementation, any one of both methods, the disclosure may be selected
With no restriction to this.
Therefore, it after executing step S402, may be selected successively to execute step S403, S404, alternatively, successively executing step
S405、S406。
S403, the surface depositing insulating layer in the GaN/AlGaN composite layer are being the insulation of pre-determined distance apart from the cathode
Window, and the deposited metal layer in the window are opened up on layer, which forms metal-with the GaN/AlGaN composite layer and partly lead
Body contact, obtains the modulation input terminal.
The modulation input terminal can be used for input modulating signal or blanking voltage, which is used for in electron beam device
Electronic beam current be modulated, such as the movement velocity of modulated electron beam stream, make electronic beam current that clustering occur.The blanking voltage is available
In the movement of electronic beam current in cutting electron beam device.
The insulating layer includes but is not limited to Si3N4The width of insulating layer, the window is 0.5~50 micron, which is
1~50 micron.
S404, window, and the deposited metal layer in the window are being opened up on the insulating layer that the anode is pre-determined distance,
The metal layer and the GaN/AlGaN composite layer form Metals-semiconductor contacts, obtain the modulation output end.
Modulation output end is used to export electronic beam current modulated signal or blanking voltage be modulated after electric signal.
S405, the surface depositing insulating layer in the GaN/AlGaN composite layer are being the insulation of pre-determined distance apart from the cathode
Window is opened up on layer, gate dielectric layer is deposited in the window, and deposited metal layer on the gate dielectric layers, obtains modulation input
End.
The modulation input terminal can be used for input modulating signal or blanking voltage, which is used for in electron beam device
Electronic beam current be modulated, such as the movement velocity of modulated electron beam stream, make electronic beam current that clustering occur.The blanking voltage is available
In the movement of electronic beam current in cutting electron beam device.
The insulating layer includes but is not limited to Si3N4Insulating layer, the gate dielectric layer may include SiO2Layer, the SiO2The thickness of layer
It is 1~500 nanometer, which is 1~50 micron.
S406, window is being opened up on the insulating layer that the anode is pre-determined distance, is depositing gate dielectric layer in the window,
And deposited metal layer on the gate dielectric layers, obtain the modulation output end.
Modulation output end is used to export electronic beam current modulated signal or blanking voltage be modulated after electric signal.
It should be noted that disclosed in above-described embodiment in the production method of electron beam device, it is compound in GaN/AlGaN
One or more modulation input terminal and one or more modulation output end can be made on layer, in order to actually use
When, multiple modulation input terminal can access different external input signals according to demand, such as can be used for input modulating signal, each
Modulated signal can be it is identical, be also possible to it is different so that electronic beam current passes through multiple modulated signal common modulations, the tune
Input terminal processed can be used for input blanking voltage.In this way, can enable the electron beam device that is obtained by this method into
Row multi-source modulation, to meet the diversified demand of function.It correspondingly, should after external input signal regulates and controls electronic beam current
Multiple modulation output ends can be used for selecting to export different electric signals.
For example, can make 2 modulation input terminals on GaN/AlGaN composite layer, one of modulation input terminal can be located at
At 20 microns of cathode, it is used for input modulating signal, another modulation input terminal can be located at 25 microns of cathode, as
Alternative modulation input terminal, when needed, the modulation input terminal can be used for input modulating signal, or for inputting cut-off electricity
Pressure.
In addition, the can also be made over the substrate when making the first electron beam device as substrate using semiconductor material
Two electron beam devices, the modulation input terminal connection of the modulation output end and the second electron beam device of first electron beam device, this
Sample can provide bigger put to modulated signal by the cascade of front and back stages the first electron beam device and the second electron beam device
Large gain.
The preferred embodiment of the disclosure is described in detail in conjunction with attached drawing above, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical solution of the disclosure
Monotropic type, these simple variants belong to the protection scope of the disclosure.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, can be combined in any appropriate way, in order to avoid unnecessary repetition, the disclosure to it is various can
No further explanation will be given for the combination of energy.
In addition, any combination can also be carried out between a variety of different embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought equally should be considered as disclosure disclosure of that.
Claims (10)
1. a kind of electron beam device characterized by comprising the GaN/ of semiconductor substrate and the semiconductor substrate surface
One end of AlGaN composite layer, the GaN/AlGaN composite layer is equipped with cathode, and the other end of the GaN/AlGaN composite layer is equipped with
Anode is equipped with modulation input terminal and modulation output end between the cathode and the anode.
2. electron beam device according to claim 1, which is characterized in that the surface of the GaN/AlGaN composite layer is equipped with
Insulating layer, the modulation input terminal and the modulation output end include: apart from the cathode and the anode be respectively default
The window opened up on the insulating layer of distance, and the metal layer deposited in the window, wherein the metal layer with it is described
GaN/AlGaN composite layer forms Metals-semiconductor contacts.
3. electron beam device according to claim 1, which is characterized in that the surface of the GaN/AlGaN composite layer is equipped with
Insulating layer, the modulation input terminal and the modulation output end include: apart from the cathode and the anode be respectively default
The metal deposited on the interior gate dielectric layer and the gate dielectric layer deposited of window, the window opened up on the insulating layer of distance
Layer, wherein the bottom of the window extends in the GaN/AlGaN composite layer.
4. electron beam device according to claim 2 or 3, which is characterized in that the modulation input terminal, modulation output
End includes one or more.
5. electron beam device according to claim 4, which is characterized in that the GaN/AlGaN composite layer be by one or
The composite layer of the multiple GaN layers of person and one or more AlGaN layer composition, wherein the GaN layer with a thickness of 10~
2000 nanometers, the AlGaN layer with a thickness of 1~50 nanometer, the distance between the anode and the cathode be 1 micron~
300 millimeters.
6. electron beam device according to claim 5, which is characterized in that the insulating layer includes Si3N4Insulating layer, it is described
The width of window is 0.5~50 micron, and the pre-determined distance is 1~50 micron.
7. a kind of electron beam device, which is characterized in that including the first electron beam device and the second electron beam device, first electricity
Beamlet device and second electron beam device include electron beam device described in any one of claims 1 to 6, and described first
Electron beam device and second electron beam device are same semi-conductive substrate, the modulation output end of first electron beam device
It is connected with the modulation input terminal of second electron beam device.
8. a kind of production method of electron beam device characterized by comprising
Using semiconductor material as bottom liner, GaN/AlGaN composite layer is deposited on the surface of the substrate；
Cathode is made in one end of the GaN/AlGaN composite layer, makes sun in the other end of the GaN/AlGaN composite layer
Pole；
Production modulation input terminal and modulation output end between the cathode and the anode.
9. the production method of electron beam device according to claim 8, which is characterized in that
It apart from the cathode and the anode is being respectively default in the surface depositing insulating layer of the GaN/AlGaN composite layer
Window, and the deposited metal layer in the window are opened up on the insulating layer of distance, obtain the modulation input terminal and the modulation
Output end, wherein the metal layer and the GaN/AlGaN composite layer form Metals-semiconductor contacts.
10. the production method of electron beam device according to claim 8, which is characterized in that
It apart from the cathode and the anode is being respectively default in the surface depositing insulating layer of the GaN/AlGaN composite layer
Window is opened up on the insulating layer of distance, gate dielectric layer, and the deposited metal layer on the gate dielectric layer are deposited in the window,
Obtain the modulation input terminal and the modulation output end.
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