CN109887818B - Electron beam device and manufacturing method thereof - Google Patents
Electron beam device and manufacturing method thereof Download PDFInfo
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- CN109887818B CN109887818B CN201910186955.3A CN201910186955A CN109887818B CN 109887818 B CN109887818 B CN 109887818B CN 201910186955 A CN201910186955 A CN 201910186955A CN 109887818 B CN109887818 B CN 109887818B
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 152
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 104
- 239000002131 composite material Substances 0.000 claims abstract description 87
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 20
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 description 13
- 230000010287 polarization Effects 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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Abstract
The present disclosure relates to an electron beam device and a method of fabricating the same, comprising: the GaN/AlGaN composite layer comprises a semiconductor substrate and a GaN/AlGaN composite layer on the surface of the semiconductor substrate, wherein one end of the GaN/AlGaN composite layer is provided with a cathode, the other end of the GaN/AlGaN composite layer is provided with an anode, and a modulation input end and a modulation output end are arranged between the cathode and the anode. Because the GaN/AlGaN composite layer is made of semiconductor materials composed of orderly arranged lattice atoms, when voltage bias is applied between the anode and the cathode, electron beam current generated at the heterojunction interface of the GaN/AlGaN composite layer passes through the lattice atoms, and the drift speed of the electron beam current is greatly limited, the running distance of the electron beam current in a time period is correspondingly reduced, so that the size of the electron beam device can be greatly reduced, the miniaturization of the electron beam device is realized, and the problem of oversized traditional electron beam device is solved.
Description
Technical Field
The present disclosure relates to the field of electronics, and in particular, to an electron beam device and a method of fabricating the same.
Background
Early electronics relied on electron tubes consisting of an electron gun and control electrodes, all of which were enclosed in a vacuum glass tube. When in operation, a specific voltage bias is applied to two ends of the electron tube, so that the cathode of the electron tube emits electron beams, and electron beam current (also called electron beam) is formed under the traction of the nearby accelerating electrode voltage, and the electron beam current travels in vacuum, finally reaches the anode of the electron tube, and forms current in an external circuit loop.
For example, the electron beam may be modulated by receiving a microwave signal coupled in by a narrow gap near the cathode on the way the electron beam travels. The electron beam has a clustered characteristic, so that the electron beam can be subjected to velocity modulation, and is shifted to be converted into density modulation. When the clustered electron beam travelling body meets the narrow gap of the output cavity, the electron beam converts kinetic energy into the microwave field of the output cavity through the narrow gap, and microwave oscillation or amplification is completed.
From the aspect of electrical characteristics, the indexes such as modulation characteristics, linearity and the like of the traditional electric vacuum tube are good, and the main problems are that the size is relatively large and the power consumption is also large. Taking the first computer ENIAC in the world, which is composed of all electric vacuum tubes, as an example, ENIAC is a great many things, using 18000 electric vacuum tubes, 1500 relays, 140 kw, 30 tons in weight, about 170 square meters in floor space, and the operation speed is only 5000 times per second.
The reason why the electric vacuum tube occupies a large size and space is mainly because the traveling speed of the electron beam is very high in the vacuum glass tube. At 1/10 of the beam speed, i.e. 3X 10 7 m/s is estimated to give a microwave frequency of 1GHz, i.e. a cycle time of 10 -9 s, the electron beam travel distance of one cycle is 3cm, so that the conventional electrovacuum tube is usually in the order of several cm or tens of cm.
Disclosure of Invention
In order to overcome the above problems, an object of the present disclosure is to provide an electron beam device and a method for manufacturing the same.
To achieve the above object, according to a first aspect of embodiments of the present disclosure, there is provided an electron beam device including: the GaN/AlGaN composite layer comprises a semiconductor substrate and a GaN/AlGaN composite layer on the surface of the semiconductor substrate, wherein one end of the GaN/AlGaN composite layer is provided with a cathode, the other end of the GaN/AlGaN composite layer is provided with an anode, and a modulation input end and a modulation output end are arranged between the cathode and the anode.
Optionally, an insulating layer is disposed on a surface of the GaN/AlGaN composite layer, and the modulation input end and the modulation output end include: and a window formed on the insulating layer with a preset distance from the cathode and the anode respectively, and a metal layer deposited in the window, wherein the metal layer and the GaN/AlGaN composite layer form metal-semiconductor contact.
Optionally, an insulating layer is disposed on a surface of the GaN/AlGaN composite layer, and the modulation input end and the modulation output end include: and a window formed on the insulating layer, which is respectively at a preset distance from the cathode and the anode, a gate dielectric layer deposited in the window and a metal layer deposited on the gate dielectric layer, wherein the bottom of the window extends into the GaN/AlGaN composite layer.
Optionally, the modulation input and the modulation output include one or more.
Optionally, the GaN/AlGaN composite layer is a composite layer composed of one or more GaN layers and one or more AlGaN layers, wherein the GaN layer has a thickness of 10 to 2000 nm, the AlGaN layer has a thickness of 1 to 50 nm, and a distance between the anode and the cathode is 1 μm to 300 mm.
Optionally, the insulating layer comprises Si 3 N 4 And the width of the window is 0.5-50 micrometers, and the preset distance is 1-50 micrometers.
According to a second aspect of the embodiments of the present disclosure, there is provided an electron beam device, including a first electron beam device and a second electron beam device, where the first electron beam device and the second electron beam device include the electron beam device according to the first aspect of the embodiments of the present disclosure, the first electron beam device and the second electron beam device are the same semiconductor substrate, and a modulation output end of the first electron beam device is connected to a modulation input end of the second electron beam device.
According to a third aspect of the embodiments of the present disclosure, there is provided a method for manufacturing an electron beam device, including: depositing a GaN/AlGaN composite layer on the surface of a substrate by taking a semiconductor material as a substrate; manufacturing a cathode at one end of the GaN/AlGaN composite layer, and manufacturing an anode at the other end of the GaN/AlGaN composite layer; a modulation input and a modulation output are made between the cathode and the anode.
Optionally, depositing an insulating layer on the surface of the GaN/AlGaN composite layer, forming a window on the insulating layer which is respectively at a preset distance from the cathode and the anode, and depositing a metal layer in the window to obtain the modulation input end and the modulation output end, wherein the metal layer and the GaN/AlGaN composite layer form metal-semiconductor contact.
Optionally, depositing an insulating layer on the surface of the GaN/AlGaN composite layer, forming a window on the insulating layer which is respectively at a preset distance from the cathode and the anode, depositing a gate dielectric layer in the window, and depositing a metal layer on the gate dielectric layer to obtain the modulation input end and the modulation output end.
Through the technical scheme, the method comprises the following steps: the GaN/AlGaN composite layer comprises a semiconductor substrate and a GaN/AlGaN composite layer on the surface of the semiconductor substrate, wherein one end of the GaN/AlGaN composite layer is provided with a cathode, the other end of the GaN/AlGaN composite layer is provided with an anode, and a modulation input end and a modulation output end are arranged between the cathode and the anode.
At the heterojunction interface of the GaN/AlGaN composite layer, due to spontaneous and piezoelectric polarization, a high density of positive net bound charges will be generated, which will attract negative charges, so that a two-dimensional electron gas with a very high areal density is formed at the heterojunction interface. The two-dimensional electron gas creates a directional drift motion from the cathode to the anode upon application of a voltage bias between the cathode and the anode. Because the GaN/AlGaN composite layer is made of semiconductor materials composed of orderly arranged lattice atoms, the drift speed of electron beam current is greatly limited when the electron beam current passes through the lattice atoms, so that the running distance of the electron beam current in a time period is correspondingly reduced, the size of an electron beam device can be greatly reduced, the miniaturization of the electron beam device is realized, and the problem of overlarge size of a traditional electric vacuum tube is solved. Meanwhile, an external electric signal is introduced through the modulation input end, so that the electron beam current in the electron beam device can be modulated.
Additional features and advantages of the present disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate the disclosure and together with the description serve to explain, but do not limit the disclosure. In the drawings:
fig. 1 is a schematic diagram of an electron beam device according to an exemplary embodiment;
fig. 2 is a schematic diagram of a structure of another electron beam device according to an exemplary embodiment;
FIG. 3 is a flow chart illustrating a method of fabricating an electron beam device according to an exemplary embodiment;
fig. 4 is a flow chart illustrating another method of fabricating an electron beam device according to an exemplary embodiment.
Detailed Description
Specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the disclosure, are not intended to limit the disclosure.
In order to solve the problem of oversized traditional electron beam devices, the present disclosure provides an electron beam device and a method for manufacturing the same, in which positive net binding charges with high density are generated at the heterojunction interface of a GaN/AlGaN composite layer due to spontaneous polarization and piezoelectric polarization, and the positive charges attract negative charges, so that two-dimensional electron gas with high areal density is formed at the heterojunction interface. The two-dimensional electron gas creates a directional drift motion from the cathode to the anode upon application of a voltage bias between the cathode and the anode. Because the GaN/AlGaN composite layer is made of semiconductor materials composed of orderly arranged lattice atoms, the drift speed of electron beam current is greatly limited when the electron beam current passes through the lattice atoms, so that the running distance of the electron beam current in a time period is correspondingly reduced, the size of an electron beam device can be greatly reduced, the miniaturization of the electron beam device is realized, and the problem of overlarge size of a traditional electric vacuum tube is solved. Meanwhile, an external electric signal is introduced through the modulation input end, so that the electron beam current in the electron beam device can be modulated.
The present disclosure is described in detail below by way of specific examples.
Fig. 1 is a schematic structural view of an electron beam device according to an exemplary embodiment, and as shown in fig. 1, the electron beam device includes: the GaN/AlGaN composite layer comprises a semiconductor substrate 1 and a GaN/AlGaN composite layer on the surface of the semiconductor substrate 1, wherein one end of the GaN/AlGaN composite layer is provided with a cathode 2, the other end of the GaN/AlGaN composite layer is provided with an anode 3, and a modulation input end 4 and a modulation output end 5 are arranged between the cathode 2 and the anode 3.
In this embodiment, at the heterojunction interface of the GaN/AlGaN composite layer, due to spontaneous polarization and piezoelectric polarization, positive net binding charges with high density are generated, and these positive charges attract negative charges, so that a two-dimensional with high surface density is formed at one side of the GaN layer at the heterojunction interfaceAnd (3) electron gas. When a voltage bias, such as 10V, is applied between the cathode and anode across the semiconductor substrate, the two-dimensional electron gas develops a directional drift motion from the cathode to the anode. Since the GaN/AlGaN composite layer is made of semiconductor material composed of aligned lattice atoms, the drift velocity of electron beam passing through the lattice atoms is greatly limited, for example, 1×10 3 m/s is estimated, in a time period 10 -9 The travelling distance of the electron beam in s is 1 micrometer, thus, the travelling distance of the electron beam is greatly reduced in a time period, so that the electron beam device can be reduced from the centimeter-level size to the micrometer-level size, the miniaturization of the electron beam device is realized, and the problem of overlarge size of the traditional electrovacuum tube is solved.
Wherein the GaN/AlGaN composite layer is a composite layer composed of a GaN layer and an AlGaN layer, and the composite layer can comprise one or more AlGaN layers and any combination of one or more GaN layers, which is not limited in this disclosure. For example, the GaN/AlGaN composite layer may include one AlGaN layer and one GaN layer, wherein the AlGaN layer may be disposed on an upper layer of the GaN layer or may be disposed on a lower layer of the GaN layer.
The modulation input end can be used for inputting a modulation signal or cut-off voltage, and the modulation signal is used for modulating the electron beam current in the electron beam device, such as modulating the movement speed of the electron beam current, so that the electron beam current is clustered. The cut-off voltage may be used to cut off movement of the electron beam current within the electron beam device. Accordingly, an electric signal obtained by modulating the electron beam by a modulating signal or a cut-off voltage is output from the modulating output terminal.
Alternatively, the GaN layer has a thickness of 10 to 2000 nm, the AlGaN layer has a thickness of 1 to 50 nm, and the distance between the anode and the cathode is 1 μm to 300 mm. Wherein, in the AlGaN layer, the Al component in AlGaN may be 28%.
On the basis of the electron beam device shown in fig. 1, the present disclosure provides two different configurations of modulation inputs and modulation outputs, as shown in example one and example two, respectively.
Example one:
the surface of this GaN/AlGaN composite layer is equipped with the insulating layer, and this modulation input end and this modulation output end include: and a window formed on the insulating layer at a predetermined distance from the cathode and the anode, respectively, and a metal layer deposited in the window, wherein the metal layer and the GaN/AlGaN composite layer form metal-semiconductor contact.
Wherein the insulating layer includes but is not limited to Si 3 N 4 The width of the window is 0.5-50 micrometers, and the preset distance is 1-50 micrometers. For example, when the modulation input terminal and the modulation output terminal are fabricated according to the present embodiment, si of 20 μm from the cathode and anode, respectively, can be used 3 N 4 Etching Si off the insulating layer 3 N 4 Forming a window with the width of 0.5 microns, depositing a metal layer in the window, and enabling the metal layer to form metal-semiconductor contact with the GaN/AlGaN composite layer so as to obtain a modulation input end and a modulation output end.
Example two:
the surface of this GaN/AlGaN composite layer is equipped with the insulating layer, and this modulation input end and this modulation output end include: and a window formed on the insulating layer, which is respectively at a preset distance from the cathode and the anode, a gate dielectric layer deposited in the window and a metal layer deposited on the gate dielectric layer, wherein the bottom of the window extends into the GaN/AlGaN composite layer.
Wherein the insulating layer includes but is not limited to Si 3 N 4 An insulating layer, a gate dielectric layer comprising SiO 2 A layer of SiO 2 The thickness of the layer is 1-500 nm and the preset distance is 1-50 microns. For example, in fabricating the modulation input and modulation output according to this embodiment, si may be etched away at 20 microns from the cathode and anode, respectively 3 N 4 Then continuing etching downwards into the GaN/AlGaN composite layer to form a window with the width of 0.5 micrometers, wherein SiO with the thickness of 10 nanometers can be deposited in the window 2 Layer of SiO 2 A metal layer is deposited over the layers to obtain a modulation input and a modulation output.
It should be noted that, first, the electron beam device of the present disclosure may include the modulation input terminal and the modulation output terminal described in example one, or include the modulation input terminal and the modulation output terminal described in example two.
Further, the electron beam device of the present disclosure may include one or more modulation input terminals and one or more modulation output terminals, where the plurality of modulation input terminals may be connected to different external input signals according to requirements, for example, may be used to input modulation signals, and each modulation signal may be the same or different, so that an electron beam in the electron beam device flows through the plurality of modulation signals to be commonly modulated, and the modulation input terminals may also be used to input a cut-off voltage. Thus, a plurality of external inputs are connected through a plurality of modulation input ends, and the electron beam device is subjected to multi-source modulation, so that the functions of the electron beam device can be diversified. Correspondingly, after the external input signal regulates and controls the electron beam current, the plurality of modulation output ends can be used for selectively outputting different electric signals.
For example, the electron beam device may comprise 2 modulation inputs, one of which may be disposed 20 microns from the cathode for inputting the modulation signal and the other of which may be disposed 25 microns from the cathode, as alternative modulation inputs, which may be used for inputting the modulation signal, or for inputting the off-voltage, if desired.
Fig. 2 is a schematic structural view of another electron beam device according to an exemplary embodiment, and as shown in fig. 2, includes a first electron beam device 10 and a second electron beam device 11, where the first electron beam device 10 and the second electron beam device 11 include the electron beam device shown in fig. 1, the first electron beam device 10 and the second electron beam device 11 are the same semiconductor substrate, and a modulation output terminal 5 of the first electron beam device 10 is connected to a modulation input terminal 4 of the second electron beam device 11.
In this way, by cascading the first electron beam device and the second electron beam device in tandem, a greater amplification gain can be provided to the modulation signal. Meanwhile, as the electron beam device disclosed by the disclosure can be integrated in process and can be manufactured in microminiaturization, the two electron beam devices can be cascaded on the same semiconductor substrate, and the problem that the two electron beam devices cannot be manufactured in the same vacuum glass tube in the prior art is solved.
Fig. 3 is a flowchart illustrating a method of fabricating an electron beam device according to an exemplary embodiment, the method comprising:
s301, taking a semiconductor material as a substrate, and depositing a GaN/AlGaN composite layer on the surface of the substrate.
In this step, at the heterojunction interface of the GaN/AlGaN composite layer, positive net bound charges of high density will be generated due to spontaneous polarization and piezoelectric polarization, and these positive charges will attract negative charges, so that two-dimensional electron gas of high areal density is formed at one side of the GaN layer at the heterojunction interface. When a voltage bias, such as 10V, is applied between the cathode and anode across the semiconductor substrate, the two-dimensional electron gas develops a directional drift motion from the cathode to the anode. Since the GaN/AlGaN composite layer is made of semiconductor material composed of aligned lattice atoms, the drift velocity of electron beam passing through the lattice atoms is greatly limited, for example, 1×10 3 m/s is estimated, in a time period 10 -9 The travelling distance of the electron beam in s is 1 micron, so that the travelling distance of the electron beam is greatly reduced in a time period, the electron beam device can be reduced from the centimeter-level size to the micrometer-level size, the miniaturization of the electron beam device is realized, and the problem of overlarge size of the traditional electrovacuum tube is solved.
Wherein the GaN/AlGaN composite layer is a composite layer composed of a GaN layer and an AlGaN layer, and the composite layer can comprise one or more AlGaN layers and any combination of one or more GaN layers, which is not limited in this disclosure. For example, the GaN/AlGaN composite layer may include one AlGaN layer and one GaN layer, wherein the AlGaN layer may be disposed on an upper layer of the GaN layer or may be disposed on a lower layer of the GaN layer.
Alternatively, the GaN layer has a thickness of 10 to 2000 nm and the AlGaN layer has a thickness of 1 to 50 nm, wherein in the AlGaN layer, the composition of Al in AlGaN may be 28%.
S302, manufacturing a cathode at one end of the GaN/AlGaN composite layer, and manufacturing an anode at the other end of the GaN/AlGaN composite layer.
When external voltage bias is applied to the anode and the cathode, the electron beam current forms directional drift motion from the cathode to the anode. Alternatively, the distance between the anode and the cathode may be set to 1 μm to 300 mm.
S303, manufacturing a modulation input end and a modulation output end between the cathode and the anode.
The modulation input end can be used for inputting a modulation signal or cut-off voltage, and the modulation signal is used for modulating the electron beam current in the electron beam device, such as modulating the movement speed of the electron beam current, so that the electron beam current is clustered. The cut-off voltage can be used to cut off the movement of the electron beam current. Correspondingly, the modulation output end is used for outputting an electric signal obtained by modulating the electron beam flowing through a modulation signal or a cut-off voltage.
Fig. 4 is a flowchart illustrating a method of fabricating an electron beam device according to another exemplary embodiment, the method including:
s401, taking a semiconductor material as a substrate, and depositing a GaN/AlGaN composite layer on the surface of the substrate.
In this step, due to spontaneous polarization and piezoelectric polarization, a high-density positive net bound charge is generated at the heterojunction interface of the GaN/AlGaN composite layer, and these positive charges will attract negative charges, so that a two-dimensional electron gas with a very high areal density is formed at one side of the GaN layer at the heterojunction interface. When a voltage bias, such as 10V, is applied between the cathode and anode across the semiconductor substrate, the two-dimensional electron gas develops a directional drift motion from the cathode to the anode. Since the GaN/AlGaN composite layer is made of semiconductor material composed of aligned lattice atoms, the drift velocity of electron beam passing through the lattice atoms is greatly limited, for example, 1×10 3 m/s is estimated, in a time period 10 -9 The travel distance of the electron beam in s is 1 micrometer, thus the travel distance of the electron beam in a period of time is greatly reduced, and the electron beam device can be reduced from the centimeter-level size to the micrometer-level sizeAnd the miniaturization of the electron beam device is realized, and the problem of overlarge size of the traditional electric vacuum tube is solved.
Wherein the GaN/AlGaN composite layer is a composite layer composed of a GaN layer and an AlGaN layer, and the composite layer can comprise one or more AlGaN layers and any combination of one or more GaN layers, which is not limited in this disclosure. For example, the GaN/AlGaN composite layer may include one AlGaN layer and one GaN layer, wherein the AlGaN layer may be disposed on an upper layer of the GaN layer or may be disposed on a lower layer of the GaN layer.
Alternatively, the GaN layer has a thickness of 10 to 2000 nm and the AlGaN layer has a thickness of 1 to 50 nm, wherein in the AlGaN layer, the composition of Al in AlGaN may be 28%.
S402, manufacturing a cathode at one end of the GaN/AlGaN composite layer, and manufacturing an anode at the other end of the GaN/AlGaN composite layer.
When external voltage bias is applied to the anode and the cathode, the electron beam current forms directional drift motion from the cathode to the anode.
Alternatively, the distance between the anode and the cathode may be set to 1 μm to 300 mm.
The present disclosure provides two different methods for manufacturing a modulation input terminal and a modulation output terminal, steps S403 and S404 are descriptions of one method for manufacturing a modulation input terminal and a modulation output terminal, and steps S405 and S406 are descriptions of the other method for manufacturing a modulation input terminal and a modulation output terminal. Either of these two methods may be selected in practice, and this disclosure is not limited in this regard.
Accordingly, after step S402 is performed, steps S403 and S404 may be sequentially performed, or steps S405 and S406 may be sequentially performed.
S403, depositing an insulating layer on the surface of the GaN/AlGaN composite layer, opening a window on the insulating layer which is at a preset distance from the cathode, depositing a metal layer in the window, and forming metal-semiconductor contact between the metal layer and the GaN/AlGaN composite layer to obtain the modulation input end.
The modulation input end can be used for inputting a modulation signal or cut-off voltage, and the modulation signal is used for modulating the electron beam current in the electron beam device, such as modulating the movement speed of the electron beam current, so that the electron beam current is clustered. The cut-off voltage may be used to cut off movement of the electron beam current within the electron beam device.
The insulating layer includes but is not limited to Si 3 N 4 The width of the window is 0.5-50 micrometers, and the preset distance is 1-50 micrometers.
S404, a window is formed on the insulating layer which is at a preset distance from the anode, a metal layer is deposited in the window, and the metal layer and the GaN/AlGaN composite layer form metal-semiconductor contact to obtain the modulation output end.
The modulation output end is used for outputting an electric signal modulated by the electron beam flowing through a modulation signal or the cut-off voltage.
S405, depositing an insulating layer on the surface of the GaN/AlGaN composite layer, opening a window on the insulating layer which is at a preset distance from the cathode, depositing a gate dielectric layer in the window, and depositing a metal layer on the gate dielectric layer to obtain the modulation input end.
The modulation input end can be used for inputting a modulation signal or cut-off voltage, and the modulation signal is used for modulating the electron beam current in the electron beam device, such as modulating the movement speed of the electron beam current, so that the electron beam current is clustered. The cut-off voltage may be used to cut off movement of the electron beam current within the electron beam device.
The insulating layer includes but is not limited to Si 3 N 4 An insulating layer, a gate dielectric layer comprising SiO 2 A layer of SiO 2 The thickness of the layer is 1-500 nm and the preset distance is 1-50 microns.
S406, a window is formed in the insulating layer which is at a preset distance from the anode, a gate dielectric layer is deposited in the window, and a metal layer is deposited on the gate dielectric layer, so that the modulation output end is obtained.
The modulation output end is used for outputting an electric signal modulated by the electron beam flowing through a modulation signal or the cut-off voltage.
It should be noted that, in the method for manufacturing an electron beam device disclosed in the foregoing embodiment, one or more modulation input ends and one or more modulation output ends may be manufactured on the GaN/AlGaN composite layer, so that, in practical use, the plurality of modulation input ends may be connected to different external input signals according to requirements, for example, may be used to input modulation signals, and each modulation signal may be the same or different, so that the electron beam flows are commonly modulated by the plurality of modulation signals, and the modulation input ends may also be used to input a cut-off voltage. Thus, the electron beam device obtained by the method can carry out multi-source modulation so as to meet the diversified requirements of functions. Correspondingly, after the external input signal regulates and controls the electron beam current, the plurality of modulation output ends can be used for selectively outputting different electric signals.
For example, 2 modulation inputs may be fabricated on the GaN/AlGaN composite layer, one of which may be located 20 microns from the cathode for inputting the modulation signal and the other of which may be located 25 microns from the cathode, as alternative modulation inputs which may be used for inputting the modulation signal, or for inputting the off voltage, if desired.
In addition, when the first electron beam device is manufactured by taking the semiconductor material as a substrate, the second electron beam device can be manufactured on the substrate, and the modulation output end of the first electron beam device is connected with the modulation input end of the second electron beam device, so that the modulation signal can be provided with larger amplification gain through cascading of the front and rear first electron beam devices and the second electron beam devices.
The preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, but the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solutions of the present disclosure within the scope of the technical concept of the present disclosure, and all the simple modifications belong to the protection scope of the present disclosure.
In addition, the specific features described in the foregoing embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, the present disclosure does not further describe various possible combinations.
Moreover, any combination between the various embodiments of the present disclosure is possible as long as it does not depart from the spirit of the present disclosure, which should also be construed as the disclosure of the present disclosure.
Claims (6)
1. An electron beam device, comprising: the GaN/AlGaN composite layer is arranged on the surface of the semiconductor substrate, one end of the GaN/AlGaN composite layer is provided with a cathode, the other end of the GaN/AlGaN composite layer is provided with an anode, and a modulation input end and a modulation output end are arranged between the cathode and the anode;
the surface of GaN/AlGaN composite layer is equipped with the insulating layer, modulation input with modulation output includes: a window formed on the insulating layer with a preset distance from the cathode and the anode respectively, and a metal layer deposited in the window, wherein the metal layer and the GaN/AlGaN composite layer form metal-semiconductor contact;
the surface of GaN/AlGaN composite layer is equipped with the insulating layer, modulation input with modulation output includes: a window formed on the insulating layer, a gate dielectric layer deposited in the window and a metal layer deposited on the gate dielectric layer, wherein the window and the anode are respectively at a preset distance from each other, and the bottom of the window extends into the GaN/AlGaN composite layer;
and forming two-dimensional electron gas on one side of the GaN layer at the heterojunction interface of the GaN/AlGaN composite layer.
2. The electron beam device of claim 1, wherein the modulation input and the modulation output comprise one or more.
3. The electron beam device of claim 2, wherein the GaN/AlGaN composite layer is a composite layer composed of one or more GaN layers and one or more AlGaN layers, wherein the GaN layers have a thickness of 10 to 2000 nm, the AlGaN layers have a thickness of 1 to 50 nm, and a distance between the anode and the cathode is 1 to 300 mm.
4. The electron beam device of claim 3, wherein the insulating layer comprises Si 3 N 4 And the width of the window is 0.5-50 micrometers, and the preset distance is 1-50 micrometers.
5. An electron beam device, comprising a first electron beam device and a second electron beam device, wherein the first electron beam device and the second electron beam device comprise the electron beam device of any of claims 1 to 4, the first electron beam device and the second electron beam device are the same semiconductor substrate, and a modulation output of the first electron beam device is connected to a modulation input of the second electron beam device.
6. A method of fabricating an electron beam device, comprising:
taking a semiconductor material as a substrate, and depositing a GaN/AlGaN composite layer on the surface of the substrate;
manufacturing a cathode at one end of the GaN/AlGaN composite layer, and manufacturing an anode at the other end of the GaN/AlGaN composite layer;
a modulation input end and a modulation output end are manufactured between the cathode and the anode;
depositing an insulating layer on the surface of the GaN/AlGaN composite layer, opening windows on the insulating layer which are respectively at a preset distance from the cathode and the anode, and depositing a metal layer in the windows to obtain the modulation input end and the modulation output end, wherein the metal layer and the GaN/AlGaN composite layer form metal-semiconductor contact;
depositing an insulating layer on the surface of the GaN/AlGaN composite layer, opening a window on the insulating layer which is respectively at a preset distance from the cathode and the anode, depositing a gate dielectric layer in the window, and depositing a metal layer on the gate dielectric layer to obtain the modulation input end and the modulation output end;
and forming two-dimensional electron gas on one side of the GaN layer at the heterojunction interface of the GaN/AlGaN composite layer.
Priority Applications (1)
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU135448U1 (en) * | 2012-12-27 | 2013-12-10 | Открытое акционерное общество "НПО "Геофизика-НВ" | PHOTOCATODE ASSEMBLY OF A VACUUM PHOTOELECTRONIC DEVICE WITH A SEMI-TRANSPARENT PHOTOCATODE |
| CN105185827A (en) * | 2015-09-08 | 2015-12-23 | 东南大学 | AlGaN/GaN high-electron-mobility power semiconductor device |
| CN106298887A (en) * | 2016-09-30 | 2017-01-04 | 中山大学 | A kind of preparation method of high threshold voltage high mobility notched gates MOSFET |
| CN106910770A (en) * | 2017-03-03 | 2017-06-30 | 上海新傲科技股份有限公司 | Gallium nitride base phase inverter chip and forming method thereof |
| WO2017190511A1 (en) * | 2016-05-04 | 2017-11-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Field emission device and manufacturing method therefor |
| WO2018037296A1 (en) * | 2016-08-22 | 2018-03-01 | Epitronic Holdings Pte. Ltd. | Surface acoustic wave rfid sensor for material and structure sensing |
| CN209641619U (en) * | 2019-03-13 | 2019-11-15 | 西安众力为半导体科技有限公司 | A kind of electron beam device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103346406B (en) * | 2013-05-20 | 2015-04-29 | 电子科技大学 | High electron mobility transistor-based terahertz wave spatial external modulator |
-
2019
- 2019-03-13 CN CN201910186955.3A patent/CN109887818B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU135448U1 (en) * | 2012-12-27 | 2013-12-10 | Открытое акционерное общество "НПО "Геофизика-НВ" | PHOTOCATODE ASSEMBLY OF A VACUUM PHOTOELECTRONIC DEVICE WITH A SEMI-TRANSPARENT PHOTOCATODE |
| CN105185827A (en) * | 2015-09-08 | 2015-12-23 | 东南大学 | AlGaN/GaN high-electron-mobility power semiconductor device |
| WO2017190511A1 (en) * | 2016-05-04 | 2017-11-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Field emission device and manufacturing method therefor |
| WO2018037296A1 (en) * | 2016-08-22 | 2018-03-01 | Epitronic Holdings Pte. Ltd. | Surface acoustic wave rfid sensor for material and structure sensing |
| CN106298887A (en) * | 2016-09-30 | 2017-01-04 | 中山大学 | A kind of preparation method of high threshold voltage high mobility notched gates MOSFET |
| CN106910770A (en) * | 2017-03-03 | 2017-06-30 | 上海新傲科技股份有限公司 | Gallium nitride base phase inverter chip and forming method thereof |
| CN209641619U (en) * | 2019-03-13 | 2019-11-15 | 西安众力为半导体科技有限公司 | A kind of electron beam device |
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