CN109887816B - Reflective field emission electronic light source device and preparation method thereof - Google Patents
Reflective field emission electronic light source device and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims description 26
- 239000011521 glass Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 59
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000011787 zinc oxide Substances 0.000 claims abstract description 21
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- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 28
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
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- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 12
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- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 7
- 239000004312 hexamethylene tetramine Substances 0.000 claims description 7
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Abstract
The invention discloses a reflective field emission electron light source device, which mainly comprises a transparent cathode, an electron emitter and a non-transparent reflective anode; sequentially manufacturing a patterned ITO electrode, a magnetron sputtering AZO seed layer and a hydrothermally grown ZnO nano-rod array electron emitter on an ITO glass substrate to obtain a patterned zinc oxide nano-rod array cathode; manufacturing mutually independent hemispherical groove anode units on a glass substrate by photoetching and wet chemical methods, then sequentially spraying and depositing a conductive layer Ag film and electronic fluorescent powder in the hemispherical grooves to obtain a non-transparent reflective anode, and then combining an isolator to assemble a reflective field emission electronic light source device; the electron beam of the reflective field emission electron light source device is imaged on one side of the cathode plate, an electron reflection image is presented as a plane light source, the electron reflection image not only has the self-focusing characteristic of the electron beam, but also has the self-enhancement performance of an electric field, and the threshold voltage of the device is low and the luminous brightness is high.
Description
Technical Field
The invention relates to a reflective field emission electronic light source device and a preparation method thereof, belonging to the technical field of vacuum electronics.
Background
Field emission, cold cathode electron emission, is a phenomenon in which the height of a surface barrier of a material is reduced and the width is narrowed by the action of an external electric field, and electrons are injected into a vacuum through or over the surface barrier by quantum mechanical tunneling. The field emission electron source composed of the nano cold cathode, such as X-ray source, microwave device, display light source, etc. has been attracting attention in medical, military and commercial fields because of its advantages such as no delay, high brightness and high color saturation.
The conventional planar diode-structured electron source (shown in fig. 1) mainly comprises a cathode plate, a transparent anode plate and an electron emitter, wherein when a sufficiently large voltage is applied to the cathode and anode electrodes, the electron emitter emits electrons to bombard fluorescent powder on the anode plate to emit light, and the electron emission is shown on one side of the anode plate. The diode-structured electron source device has the advantages of simple structure and low manufacturing cost, but has limited application due to the defects of no beam spot focusing, low brightness, high required anode voltage and the like.
Disclosure of Invention
The invention aims at overcoming the defects of the research in the field and provides a reflective field emission electron light source device and a preparation method thereof, wherein the reflective field emission electron light source mainly comprises a transparent cathode, an electron emitter and a non-transparent reflective anode, and patterned ITO electrodes, a magnetron sputtering AZO seed layer and a hydrothermal growth ZnO nanorod array electron emitter are sequentially manufactured on an ITO glass substrate to obtain a patterned zinc oxide nanorod array cathode; and manufacturing mutually independent hemispherical groove anode units on a glass substrate by photoetching and wet chemical methods, then sequentially spraying and depositing a conductive layer Ag film and electronic fluorescent powder in the hemispherical grooves to obtain a non-transparent reflective anode, and then combining an isolator to assemble the reflective field emission electronic light source device.
In order to achieve the above purpose, the following technical scheme is adopted:
the preparation method of the reflective field emission electronic light source device comprises the steps of patterning transparent ITO cathode preparation, electron emitter preparation, non-transparent reflective hemispherical groove anode preparation and electronic light source device assembly, and specifically comprises the following steps:
(1) Patterned transparent ITO cathode preparation
Ultrasonic treating ITO glass with thickness of 1.1mm in acetone, ethanol and pure water for 15min, respectively, and dryingDrying in a drying box at 110 ℃ for 2 hours; then, LPR-800 negative photoresist is screen-printed on ITO glass, the printing thickness is 12 mu m, and then the glass printed with the photoresist is heat-preserved for 20min at 120 ℃ in a drying oven; after the photoresist is naturally cooled, the intensity is 4.4mW/cm 2 Exposing for 15s on an ultraviolet depth photoetching machine; after exposure, na with a mass concentration of 1% was used 2 CO 3 Spraying and developing the glass coated with the photoresist by the solution; the photo-cured glue is dissolved in Na 2 CO 3 The solution is dropped off, then, mixed solution of hydrochloric acid, nitric acid and water with the volume ratio of 50:6:50 is used for spray etching of ITO at 60 ℃, the substrate subjected to wet etching is soaked in acetone solution, photoresist on the surface of the ITO is dropped off due to the fact that the photoresist is dissolved in the acetone, and a transparent cathode glass substrate and strip-shaped ITO electrodes with the line width of 6-30 microns are formed.
(2) Preparation of electron emitters
Fixing the metal mask plate with matched patterns and the ITO glass substrate prepared in the previous step, placing the metal mask plate and the ITO glass substrate on a rotary carrier of a cavity of a magnetron sputtering coating machine, and vacuumizing the cavity to 6 multiplied by 10 -4 Pa, heating the ITO glass substrate to 200 ℃, then introducing 30 SCCM argon into the cavity, adjusting the target power of AZO (ZnO: AL atomic ratio of 99:1) to 90W, biasing 60V, and cavity pressure of 0.43 Pa, and sputtering and depositing an AZO seed layer on the surface of the ITO glass substrate; the deposition time of the seed layer is 12min, and the layer thickness is 50 nm; and then placing the ITO glass substrate covered with the AZO seed layer into a zinc nitrate and hexamethylenetetramine (0.01-0.03M) solution with a molar ratio of 1:1, and preserving heat for 6-24 hours at 80-100 ℃ to prepare a ZnO nano rod array, thereby forming the electron emitter.
(3) Preparation of non-transparent reflective hemispherical groove anode
Polishing the surface of a glass substrate, magnetically sputtering a Cr film with the thickness of 60-150 nm on a polished surface, coating AZ4620 photoresist on the Cr film at the rotating speed of 2500 r/min and the thickness of 5-15 mu m, and performing pre-baking, photoetching, developing and hardening treatment; etching after hardening, wherein the Cr film etching liquid is KMnO 4 +NaOH+H 2 O (mass ratio: 10:3:100); the etching liquid of the glass substrate is HF+NH 4 F (the concentration is 0.5 mol/l), the time for etching the Cr film is 3-10 min, and the time for etching the glass substrate is 27Cleaning glass after etching is completed and removing photoresist and Cr films to form a hemispherical groove anode (groove depth is 60-200 mu m); then placing the etched anode in pure water for ultrasonic cleaning for 20min and baking for 3h at 100 ℃; fixing the metal mask plate with the matched pattern with etched anode glass, and sequentially depositing a nano Ag layer with the thickness of 3-8 mu m (heat treatment: heat preservation at 530 ℃ for 60 min) and an electronic fluorescent powder with the thickness of 1-3 mu m (heat treatment: heat preservation at 220 ℃ for 30 min) on the surface of the hemispherical groove anode by adopting a spraying technology.
(4) Electronic light source device assembly
And assembling the prepared cathode, the isolator and the prepared non-transparent reflective anode which grow with the patterned zinc oxide nano rod array into a reflective field emission electronic light source device.
The beneficial effects are that: the preparation of the non-transparent reflective anode is to manufacture mutually independent hemispherical groove units on a glass substrate by introducing photoetching and wet chemical methods, wherein each hemispherical unit serves as an electron beam reflective anode; the Ag film of the conducting layer and the low-voltage electronic fluorescent powder layer are sequentially deposited in the etched hemispherical groove glass, and the anode structure not only realizes the self-focusing characteristic after the electron beam is reflected, but also effectively reduces the threshold voltage of the device; the electron beam of the reflective field emission electron light source device is imaged on one side of the cathode plate, an electron reflection image is presented as a plane light source, the electron reflection image not only has the self-focusing characteristic of the electron beam, but also has the self-enhancement performance of an electric field, and the threshold voltage of the device is low and the luminous brightness is high.
Drawings
FIG. 1 is a schematic diagram of a conventional two-level structure electron source device;
FIG. 2 is a schematic diagram of a reflective field emission electron source device according to the present invention;
FIG. 3 is a diagram of a cathode structure of a patterned zinc oxide nanorod array grown according to the present invention;
FIG. 4 is a diagram of the structure of a non-transparent reflective anode of the present invention;
FIG. 5 is a schematic diagram of a three-dimensional structure of a reflective field emission electron source device according to the present invention;
FIG. 6 is a typical XRD pattern for zinc oxide nanorods;
FIG. 7 is a FESEM electron micrograph of a typical hydrothermally grown zinc oxide nanorod array;
FIG. 8 is a graph showing the I-V characteristics of a reflective field emission electron source device of the present invention versus a conventional diode structure device;
FIG. 9 is a diagram showing the contrast of electron emission images of a conventional diode-structured electron source device (a) and a reflective field emission electron source device (b);
FIG. 10 is a flow chart of a process for fabricating a reflective field emission electron source device structure;
in the figure: 1-cathode glass substrate, 2-isolator, 3-conductive nanometer Ag layer, 4, -electron fluorescent powder, 5-anode glass substrate, 6-electron emitter, 7-patterned ITO electrode and 8-AZO seed layer.
Detailed Description
Example 1
(1) Patterned transparent ITO cathode preparation
Respectively carrying out ultrasonic treatment on ITO glass with the thickness of 1.1mm in acetone, ethanol and pure water for 15min, and then drying the ITO glass in a drying oven at 110 ℃ for 2h; then, LPR-800 negative photoresist is screen-printed on ITO glass, the printing thickness is 12 mu m, and then the glass printed with the photoresist is heat-preserved for 20min at 120 ℃ in a drying oven; after the photoresist is naturally cooled, the intensity is 4.4mW/cm 2 Exposing for 15s on an ultraviolet depth photoetching machine; after exposure, na with a mass concentration of 1% was used 2 CO 3 Spraying and developing the glass coated with the photoresist by the solution; the photo-cured glue is dissolved in Na 2 CO 3 The solution is dropped, then, mixed solution of hydrochloric acid, nitric acid and water with the volume ratio of 50:6:50 is used for spray etching the ITO at 60 ℃, the substrate subjected to wet etching is soaked in acetone solution, photoresist on the surface of the ITO is dropped due to the dissolution in the acetone, and a transparent cathode glass substrate and a strip-shaped ITO electrode with the line width of 12 mu m are formed.
(2) Preparation of electron emitters
Fixing the metal mask plate with matched patterns and the ITO glass substrate prepared in the previous step, and placing the metal mask plate and the ITO glass substrate on a rotary carrier of a cavity of a magnetron sputtering coating machine together until the metal mask plate and the ITO glass substrate are to be treatedThe cavity is vacuumized to 6 multiplied by 10 -4 Pa, heating the ITO glass substrate to 200 ℃, then introducing 30 SCCM argon into the cavity, adjusting the target power of AZO (ZnO: AL atomic ratio of 99:1) to 90W, biasing 60V, and cavity pressure of 0.43 Pa, and sputtering and depositing an AZO seed layer on the surface of the ITO glass substrate; the deposition time of the seed layer is 12min, and the layer thickness is 50 nm; then, the ITO glass substrate covered with the AZO seed layer is placed in a solution of zinc nitrate and hexamethylenetetramine (0.025M) in a molar ratio of 1:1, and the temperature is kept at 85 ℃ for 20 hours to prepare a ZnO nano-rod array, so that an electron emitter is formed.
(3) Preparation of non-transparent reflective hemispherical groove anode
Polishing the surface of a glass substrate, magnetically sputtering a Cr film with the thickness of 120nm on the polished surface, coating AZ4620 photoresist on the Cr film at the rotating speed of 2500 r/min and the thickness of 8 mu m, and performing pre-baking, photoetching, developing and hardening treatment; etching after hardening, wherein the Cr film etching liquid is KMnO 4 +NaOH+H 2 O (mass ratio: 10:3:100); the etching liquid of the glass substrate is HF+NH 4 F (the concentration is 0.5 mol/l), the time for etching the Cr layer is 4 min, the time for etching the glass substrate is 26 min, and after etching, the glass is cleaned, photoresist and Cr film are removed, so that a hemispherical groove anode (the groove depth is 100 mu m) is formed; then placing the etched anode in pure water for ultrasonic cleaning for 20min and baking for 3h at 100 ℃; fixing the metal mask plate with the matched pattern with etched anode glass, and sequentially depositing a nano Ag layer with the thickness of 5 mu m (heat treatment: heat preservation at 530 ℃ for 60 min) and an electronic fluorescent powder with the thickness of 2 mu m (heat treatment: heat preservation at 220 ℃ for 30 min) on the surface of the hemispherical groove anode by adopting a spraying technology.
And finally, assembling the prepared cathode with the patterned zinc oxide nanorod array and the prepared non-transparent reflective anode into a reflective field emission electron light source device. The measurement result shows that the threshold voltage of the device is 520V (current density j=10μa/cm 2 ) The electron beam spot has focusing characteristic, and the luminous brightness reaches 270cd/cm 2 。
Example 2
(1) Patterned transparent ITO cathode preparation
Respectively carrying out ultrasonic treatment on ITO glass with the thickness of 1.1mm in acetone, ethanol and pure water for 15min, and then drying the ITO glass in a drying oven at 110 ℃ for 2h; then, LPR-800 negative photoresist is screen-printed on ITO glass, the printing thickness is 12 mu m, and then the glass printed with the photoresist is heat-preserved for 20min at 120 ℃ in a drying oven; after the photoresist is naturally cooled, the intensity is 4.4mW/cm 2 Exposing for 15s on an ultraviolet depth photoetching machine; after exposure, na with a mass concentration of 1% was used 2 CO 3 Spraying and developing the glass coated with the photoresist by the solution; the photo-cured glue is dissolved in Na 2 CO 3 The solution is dropped, then, mixed solution of hydrochloric acid, nitric acid and water with the volume ratio of 50:6:50 is used for spray etching the ITO at 60 ℃, the substrate subjected to wet etching is soaked in acetone solution, photoresist on the surface of the ITO is dropped due to the dissolution in the acetone, and a transparent cathode glass substrate and a strip-shaped ITO electrode with the line width of 12 mu m are formed.
(2) Preparation of electron emitters
Fixing the metal mask plate with matched patterns and the ITO glass substrate prepared in the previous step, placing the metal mask plate and the ITO glass substrate on a rotary carrier of a cavity of a magnetron sputtering coating machine, and vacuumizing the cavity to 6 multiplied by 10 -4 Pa, heating the ITO glass substrate to 200 ℃, then introducing 30 SCCM argon into the cavity, adjusting the target power of AZO (ZnO: AL atomic ratio of 99:1) to 90W, biasing 60V, and cavity pressure of 0.43 Pa, and sputtering and depositing an AZO seed layer on the surface of the ITO glass substrate; the deposition time of the seed layer is 12min, and the layer thickness is 50 nm; then, the ITO glass substrate covered with the AZO seed layer is put into a solution of zinc nitrate and hexamethylenetetramine (0.02M) with the mol ratio of 1:1, and the temperature is kept at 90 ℃ for 24 hours to prepare a ZnO nano-rod array, so as to form an electron emitter.
(3) Preparation of non-transparent reflective hemispherical groove anode
Polishing the surface of a glass substrate, magnetically sputtering a Cr film with the thickness of 150nm on the polished surface, coating AZ4620 photoresist on the Cr film at the rotating speed of 2500 r/min and the thickness of 10 mu m, and performing pre-baking, photoetching, developing and hardening treatment; etching after hardening, wherein the Cr film etching liquid is KMnO 4 +NaOH+H 2 O (mass ratio: 10:3:100); the etching liquid of the glass substrate is HF+NH 4 F (concentration uniformity)0.5 mol/l), etching the Cr layer for 5min, etching the glass substrate for 75 min, cleaning glass after etching, removing photoresist and Cr film to form hemispherical groove anode (groove depth 150 μm); then placing the etched anode in pure water for ultrasonic cleaning for 20min and baking for 3h at 100 ℃; fixing the metal mask plate with the matched pattern with etched anode glass, and sequentially depositing a nano Ag layer with the thickness of 5 mu m (heat treatment: heat preservation at 530 ℃ for 60 min) and an electronic fluorescent powder with the thickness of 2 mu m (heat treatment: heat preservation at 220 ℃ for 30 min) on the surface of the hemispherical groove anode by adopting a spraying technology.
And finally, assembling the prepared cathode with the patterned zinc oxide nanorod array and the prepared non-transparent reflective anode into a reflective field emission electron light source device. The measurement result shows that the threshold voltage of the device is 470V (current density j=10μa/cm 2 ) The electron beam spot has focusing characteristic, and the luminous brightness reaches 210 cd/cm 2 。
Example 3
(1) Patterned transparent ITO cathode preparation
Respectively carrying out ultrasonic treatment on ITO glass with the thickness of 1.1mm in acetone, ethanol and pure water for 15min, and then drying the ITO glass in a drying oven at 110 ℃ for 2h; then, LPR-800 negative photoresist is screen-printed on ITO glass, the printing thickness is 12 mu m, and then the glass printed with the photoresist is heat-preserved for 20min at 120 ℃ in a drying oven; after the photoresist is naturally cooled, the intensity is 4.4mW/cm 2 Exposing for 15s on an ultraviolet depth photoetching machine; after exposure, na with a mass concentration of 1% was used 2 CO 3 Spraying and developing the glass coated with the photoresist by the solution; the photo-cured glue is dissolved in Na 2 CO 3 The solution is dropped, then, mixed solution of hydrochloric acid, nitric acid and water with the volume ratio of 50:6:50 is used for spray etching the ITO at 60 ℃, the substrate subjected to wet etching is soaked in acetone solution, photoresist on the surface of the ITO is dropped due to the dissolution in the acetone, and a transparent cathode glass substrate and a strip-shaped ITO electrode with the line width of 12 mu m are formed.
(2) Preparation of electron emitters
Preparing a metal mask plate with matched patterns in the previous stepThe ITO glass substrate is fixed and is arranged on a rotary carrier of a cavity of a magnetron sputtering coating machine, and the cavity is vacuumized to 6 multiplied by 10 -4 Pa, heating the ITO glass substrate to 200 ℃, then introducing 30 SCCM argon into the cavity, adjusting the target power of AZO (ZnO: AL atomic ratio of 99:1) to 90W, biasing 60V, and cavity pressure of 0.43 Pa, and sputtering and depositing an AZO seed layer on the surface of the ITO glass substrate; the deposition time of the seed layer is 12min, and the layer thickness is 50 nm; then, the ITO glass substrate covered with the AZO seed layer is put into a solution of zinc nitrate and hexamethylenetetramine (0.015M) in a molar ratio of 1:1, and the temperature is kept at 95 ℃ for 24 hours to prepare a ZnO nano-rod array, so as to form an electron emitter.
(3) Preparation of non-transparent reflective hemispherical groove anode
Polishing the surface of a glass substrate, magnetically sputtering a Cr film with the thickness of 100nm on the polished surface, coating AZ4620 photoresist on the Cr film at the rotating speed of 2500 r/min and the thickness of 8um, and performing pre-baking, photoetching, developing and hardening treatment; etching after hardening, wherein the Cr film etching liquid is KMnO 4 +NaOH+H 2 O (mass ratio: 10:3:100); the etching liquid of the glass substrate is HF+NH 4 F (the concentration is 0.5 mol/l), the time for etching the Cr film is 3 min, the time for etching the glass substrate is 26 min, and after etching, the glass is cleaned, the photoresist and the Cr film are removed, so that a hemispherical groove anode (the groove depth is 70 mu m) is formed; then placing the etched anode in pure water for ultrasonic cleaning for 20min and baking for 3h at 100 ℃; fixing the metal mask plate with the matched pattern with etched anode glass, and sequentially depositing a nano Ag layer with the thickness of 5 mu m (heat treatment: heat preservation at 530 ℃ for 60 min) and an electronic fluorescent powder with the thickness of 2 mu m (heat treatment: heat preservation at 220 ℃ for 30 min) on the surface of the hemispherical groove anode by adopting a spraying technology.
And finally, assembling the prepared cathode with the patterned zinc oxide nanorod array and the prepared non-transparent reflective anode into a reflective field emission electron light source device. The measurement result showed that the threshold voltage of the device was 610V (current density j=10μa/cm 2 ) The electron beam spot has focusing characteristic, and the luminous brightness reaches 170 cd/cm 2 。
Fig. 8 shows I-V characteristics of a reflective field emission electron source and a conventional diode device, in which it can be seen that the threshold voltage of the reflective electron source is 520V, and the threshold voltage of the conventional diode device is 963V, which is far higher than the threshold voltage of the present invention.
FIG. 9 is a graph showing electron emission images of a conventional diode structure compared with that of a reflective structure, and FIG. a is a graph showing electron emission intensity of 34cd/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the FIG. b shows a reflection electron source with a peak luminance of 270cd/cm 2 。
The foregoing description is only illustrative of the preferred embodiments of the present invention, and all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Claims (10)
1. A method for preparing a reflective field emission electronic light source device is characterized in that: the method comprises the steps of patterning transparent ITO cathode preparation, electron emitter preparation, non-transparent reflection type hemispherical groove anode preparation and electronic light source device assembly, and specifically comprises the following steps:
(1) Patterning transparent ITO cathode preparation: firstly, carrying out ultrasonic treatment and drying treatment on ITO glass, then, carrying out screen printing of photoresist on the ITO glass, carrying out exposure treatment after drying and cooling, and adopting Na after exposure 2 CO 3 Spraying and developing the glass coated with the photoresist by using the solution, spraying and etching the ITO by using a mixed solution of hydrochloric acid, nitric acid and water, and soaking the substrate subjected to wet etching in an acetone solution to form a transparent cathode glass substrate and strip-shaped ITO electrodes with line widths of 6-30 mu m;
(2) Electron emitter preparation: fixing the metal mask matched with the pattern and the ITO glass substrate prepared in the step (1), placing the metal mask and the ITO glass substrate in a cavity of a magnetron sputtering coating machine, sputtering and depositing an AZO seed layer on the surface of the ITO glass substrate, then placing the ITO glass substrate covered with the AZO seed layer into zinc nitrate and hexamethylenetetramine solution, and preserving the temperature for 6-24 hours at 80-100 ℃ to prepare a ZnO nano rod array to form an electron emitter;
(3) Preparing a non-transparent reflective hemispherical groove anode: selecting a glass substrate for polishing, performing magnetron sputtering on a polished surface to form a Cr film with the thickness of 60-150 nm, spin-coating photoresist on the Cr film, etching the Cr film and the glass substrate respectively after pre-baking, photoetching, developing and hardening treatment, cleaning the glass substrate after etching, removing the photoresist and the Cr film to form a hemispherical groove anode with the groove depth of 60-200 mu m, performing ultrasonic cleaning and baking on the hemispherical groove anode, fixing a metal mask plate with a pattern matched with the etched anode glass, and sequentially depositing a nano Ag layer with the thickness of 3-8 mu m and electronic fluorescent powder with the thickness of 1-3 mu m on the surface of the hemispherical groove anode by adopting a spraying technology;
(4) Assembling an electronic light source device: and assembling the prepared cathode, the isolator and the prepared non-transparent reflective anode which grow with the patterned zinc oxide nano rod array into a reflective field emission electronic light source device.
2. The method for manufacturing a reflective field emission electronic light source device according to claim 1, wherein: in the step (1), ultrasonic treatment is carried out in acetone, ethanol and pure water respectively for 15min, and drying treatment is carried out at 110 ℃ for 2h.
3. The method for manufacturing a reflective field emission electronic light source device according to claim 1, wherein: the photoresist in the step (1) is LPR-800 negative photoresist, and the printing thickness is 12 mu m.
4. The method for manufacturing a reflective field emission electronic light source device according to claim 1, wherein: the exposure treatment in the step (1) was performed at an intensity of 4.4mW/cm 2 Is exposed on an ultraviolet depth lithography machine for 15s.
5. The method for manufacturing a reflective field emission electronic light source device according to claim 1, wherein: na in step (1) 2 CO 3 The mass concentration of the solution is 1%, the water volume ratio of the hydrochloric acid to the nitric acid to the water in the mixed solution of the hydrochloric acid, the nitric acid and the water is 50:6:50, and the spray etching temperature is 60 ℃.
6. The method for manufacturing a reflective field emission electronic light source device according to claim 1, wherein: the conditions for sputter depositing the AZO seed layer in step (2) are: the cavity is vacuumized to 6 multiplied by 10 -4 Pa, heating the ITO glass substrate to 200 ℃, then introducing 30 SCCM argon into the cavity, adjusting the AZO target power to 90W, biasing 60V, cavity pressure to 0.43 Pa, znO and AL atomic ratio to 99:1, and depositing for 12min; the AZO seed layer thickness was 50nm.
7. The method for manufacturing a reflective field emission electronic light source device according to claim 1, wherein: in the step (2), the molar ratio of zinc nitrate to hexamethylenetetramine is 1:1, and the concentration of hexamethylenetetramine is 0.01-0.03M.
8. The method for manufacturing a reflective field emission electronic light source device according to claim 1, wherein: the photoresist in the step (3) is AZ4620 photoresist, and the thickness of the photoresist is 5-15 mu m.
9. The method for manufacturing a reflective field emission electronic light source device according to claim 1, wherein: in the step (3), the Cr film etching liquid is KMnO 4 NaOH and H 2 The mass ratio of the mixed solution of O is 10:3:100; the etching liquid of the glass substrate is HF and NH 4 And the concentration of the mixed solution F is 0.5mol/L, the time for etching the Cr film is 3-10 min, and the time for etching the glass substrate is 27-100 min.
10. A reflective field emission electronic light source device manufactured by the manufacturing method of claims 1-9.
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| CN112921380B (en) * | 2021-01-20 | 2022-04-22 | 桂林理工大学 | Patterned electronic light source device based on anodic aluminum oxide template and manufacturing method thereof |
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