CN109873051B - Monocrystalline silicon wafer, manufacturing method thereof and cutting method of battery piece - Google Patents
Monocrystalline silicon wafer, manufacturing method thereof and cutting method of battery piece Download PDFInfo
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Abstract
The application discloses monocrystalline silicon piece, monocrystalline silicon piece's front is non-regular octagon, just the distance of first summit and the second summit of non-regular octagon is the one third of the distance of third summit and fourth summit, wherein, the second summit with the third summit is the adjacent summit on first summit, the fourth summit is the adjacent summit on second summit, every interior angle of non-regular octagon is 135. The front side of the monocrystalline silicon wafer in the application is in a non-regular octagon shape, so that waste leftover materials of the monocrystalline silicon rod are greatly reduced, the utilization rate of the monocrystalline silicon rod is improved, and the cost is saved. In addition, the application also provides a manufacturing method of the monocrystalline silicon wafer with the advantages, a cutting method of a battery piece made of the monocrystalline silicon wafer and a solar battery assembly.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a monocrystalline silicon wafer and a manufacturing method thereof, a cutting method of a cell piece and a solar cell module.
Background
The monocrystalline silicon wafer is a good semiconductor material and is used for manufacturing semiconductor devices, solar cells and the like.
The existing monocrystalline silicon wafers are all square with chamfers, the utilization rate of the manufactured monocrystalline silicon wafers to monocrystalline silicon rods is low, the waste of monocrystalline silicon rod materials is caused, and the cost of the monocrystalline silicon wafers is high.
Disclosure of Invention
The application aims to provide a monocrystalline silicon piece to improve the utilization rate of a monocrystalline silicon rod.
In order to solve the above technical problem, the present application provides a single crystal silicon wafer, the front surface of the single crystal silicon wafer is a non-regular octagon, and the distance between the first vertex and the second vertex of the non-regular octagon is one third of the distance between the third vertex and the fourth vertex, wherein the second vertex and the third vertex are the adjacent vertices of the first vertex, the fourth vertex is the adjacent vertex of the second vertex, and each internal angle of the non-regular octagon is 135 °.
Optionally, the thickness of the monocrystalline silicon wafer ranges from 100 micrometers to 220 micrometers, inclusive.
Optionally, the monocrystalline silicon wafer is a monocrystalline silicon wafer with a chamfer.
The application also provides a manufacturing method of the monocrystalline silicon wafer, which comprises the following steps:
defining an inscribed non-regular octagon in a cross section of one end of the single crystal silicon rod, wherein the distance between a first vertex and a second vertex of the non-regular octagon is one third of the distance between a third vertex and a fourth vertex, and each internal angle of the non-regular octagon is 135 degrees;
cutting the single crystal silicon rod along the non-regular octagon to obtain a pretreated single crystal silicon rod;
and slicing the pretreated silicon single crystal rod to obtain a silicon single crystal wafer with the front side being the non-regular octagon.
Optionally, the inscribed non-regular octagon is defined in a cross section of one end of the single crystal silicon rod, wherein a distance between a first vertex and a second vertex of the non-regular octagon is one third of a distance between a third vertex and a fourth vertex, and each internal angle of the non-regular octagon is 135 degrees, and then the method further comprises the following steps:
and determining the position of the non-regular octagon by determining that a connecting line of the first vertex and the second vertex is parallel to a connecting line of any two adjacent intersection points in the cross section, wherein the intersection points are the intersection points of the edge lines of the surface of the single crystal silicon rod and the cross section.
Optionally, the cutting the single crystal silicon rod along the non-regular octagon to obtain a pretreated single crystal silicon rod includes:
cutting the silicon single crystal rod along the non-regular octagon to obtain an opened silicon single crystal rod;
and forming a chamfer on the cut single crystal silicon rod to obtain the pretreated single crystal silicon rod.
The application also provides a cutting method of the battery piece, which comprises the following steps:
obtaining a cell piece made of a monocrystalline silicon piece with a non-regular octagonal front surface, wherein the monocrystalline silicon piece is made by any one of the above monocrystalline silicon piece manufacturing methods;
and cutting the battery pieces to obtain a first battery piece in a rectangular shape and four equal second battery pieces in a right trapezoid shape, wherein any two of the second battery pieces in the right trapezoid shape can be spliced into a third battery piece with the same width as the first battery piece.
Optionally, the cutting of the battery pieces is performed to obtain a first battery piece in a rectangular shape and four equal second battery pieces in a right trapezoid shape, and any two of the second battery pieces in the right trapezoid shape can be spliced into a third battery piece with a width equal to that of the first battery piece, and the method further includes:
cutting the first battery piece to form a first battery piece with four corners being reverse right angles;
and cutting the second battery piece to form the second battery piece with four corners being reverse right angles.
The application also provides a solar cell module, including from top to bottom stacked gradually upper substrate, first rete, crystal silicon battery, second rete, backplate, just crystal silicon battery is for being formed by the concatenation of a plurality of first battery pieces or by a plurality of the concatenation of third battery piece forms, wherein, first battery piece with the third battery piece is for adopting any kind of above-mentioned cutting method of battery piece the battery piece that obtains.
The front surface of the monocrystalline silicon wafer provided by the application is a non-regular octagon, and the distance between a first vertex and a second vertex of the non-regular octagon is one third of the distance between a third vertex and a fourth vertex, wherein the second vertex and the third vertex are adjacent vertices of the first vertex, the fourth vertex is adjacent vertex of the second vertex, and each internal angle of the non-regular octagon is 135 degrees. The front side of the monocrystalline silicon wafer in the application is in a non-regular octagon shape, so that waste leftover materials of the monocrystalline silicon rod are greatly reduced, the utilization rate of the monocrystalline silicon rod is improved, and the cost is saved. In addition, the application also provides a manufacturing method of the monocrystalline silicon wafer with the advantages, a cutting method of a battery piece made of the monocrystalline silicon wafer and a solar battery assembly.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a top view of a single crystal silicon wafer according to an embodiment of the present disclosure;
FIG. 2 is a flow chart of a method for fabricating a single crystal silicon wafer according to an embodiment of the present application;
FIG. 3 is a flow chart of another method for fabricating a single crystal silicon wafer according to an embodiment of the present application;
FIG. 4 is a schematic illustration of a non-regular octagonal shape of the present application as positioned within a cross-section of an end of a single crystal silicon rod;
fig. 5 is a flowchart of a method for cutting a battery piece according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of the cutting of a battery plate according to an embodiment of the present application;
FIG. 7 is a schematic diagram of a crystalline silicon cell in a solar cell module spliced by a third cell piece;
FIG. 8 is another schematic diagram of a crystalline silicon cell in a solar cell module spliced by a third cell piece;
fig. 9 is another schematic diagram of a crystalline silicon cell in a solar cell module spliced by a third cell piece;
fig. 10 is a schematic diagram of a crystalline silicon cell in a solar cell module spliced by a first cell piece.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background art, the existing monocrystalline silicon wafers are all square with chamfers, and the utilization rate of the manufactured monocrystalline silicon wafers to monocrystalline silicon rods is low, so that the waste of monocrystalline silicon rod materials is caused, and the cost of the monocrystalline silicon wafers is high.
Referring to fig. 1, fig. 1 is a top view of a single crystal silicon wafer according to an embodiment of the present invention, the front surface of the single crystal silicon wafer is a non-regular octagon, and a distance between a first vertex a and a second vertex B of the non-regular octagon is one third of a distance between a third vertex C and a fourth vertex D, wherein the second vertex B and the third vertex C are adjacent vertices of the first vertex a, the fourth vertex D is adjacent vertex B, and each internal angle of the non-regular octagon is 135 °.
The monocrystalline silicon piece provided by the application has a non-regular octagon front surface, and the distance between a first vertex A and a second vertex B of the non-regular octagon is one third of the distance between a third vertex C and a fourth vertex D, wherein the second vertex B and the third vertex C are both adjacent vertices of the first vertex A, the fourth vertex D is adjacent vertex B, and each internal angle of the non-regular octagon is 135 degrees. The front side of the monocrystalline silicon wafer in the application is in a non-regular octagon shape, so that waste leftover materials of the monocrystalline silicon rod are greatly reduced, the utilization rate of the monocrystalline silicon rod is improved, and the cost is saved.
Specifically, the distance between the first vertex a and the second vertex B is equal to the distance between the third vertex C and the fifth vertex M, and the distance between the first vertex a and the third vertex C is equal to the distance between the second vertex B and the fourth vertex D.
Preferably, on the basis of the above embodiments, in one embodiment of the present application, the thickness of the single-crystal silicon wafer ranges from 100 micrometers to 220 micrometers, inclusive.
Preferably, on the basis of any one of the above embodiments, in an embodiment of the present application, the single-crystal silicon wafer is a single-crystal silicon wafer having a chamfer. The monocrystalline silicon piece is provided with the chamfer, so that corners of the monocrystalline silicon piece become smooth, the monocrystalline silicon piece is not easily scratched when contacting or carrying the monocrystalline silicon piece, the safety is higher, the fragment rate of the monocrystalline silicon piece can be reduced, and the cost is saved.
In the present embodiment, the chamfer of the silicon single crystal wafer is not particularly limited, as the case may be. For example, the single crystal silicon wafer may be a single crystal silicon wafer having a chamfered angle, or a single crystal silicon wafer having a chamfered angle.
Referring to fig. 2, fig. 2 is a flowchart of a method for manufacturing a single crystal silicon wafer according to an embodiment of the present application, where the method includes:
step S101: defining an inscribed non-regular octagon in a cross section of one end of the single crystal silicon rod, wherein the distance between a first vertex and a second vertex of the non-regular octagon is one third of the distance between a third vertex and a fourth vertex, and each internal angle of the non-regular octagon is 135 degrees;
step S102: cutting the single crystal silicon rod along the non-regular octagon to obtain a pretreated single crystal silicon rod;
step S103: and slicing the pretreated silicon single crystal rod to obtain a silicon single crystal wafer with the front side being the non-regular octagon.
According to the manufacturing method of the monocrystalline silicon wafer, an inscribed non-regular octagon is determined in the cross section of one end of a monocrystalline silicon rod, wherein the distance between a first vertex and a second vertex of the non-regular octagon is one third of the distance between a third vertex and a fourth vertex, and each internal angle of the non-regular octagon is 135 degrees; cutting the single crystal silicon rod along the non-regular octagon to obtain a pretreated single crystal silicon rod; and slicing the pretreated silicon single crystal rod to obtain a silicon single crystal wafer with the front side being the non-regular octagon. The non-regular octagon is determined to be inscribed in the cross section of one end of the single crystal silicon rod, then the pre-processed single crystal silicon rod is obtained by cutting, the cut volume of the single crystal silicon rod can be effectively reduced, the utilization rate of the single crystal silicon rod is increased, and the cost is saved.
Referring to fig. 3 and 4, fig. 3 is a flow chart illustrating another method for manufacturing a single crystal silicon wafer according to an embodiment of the present application, and fig. 4 is a schematic view illustrating a non-regular octagonal position in a cross section of an end of a single crystal silicon rod, the method comprising:
step S201: an inscribed non-regular octagon is defined in a cross section of one end of the single crystal silicon rod, wherein a distance between a first vertex and a second vertex of the non-regular octagon is one third of a distance between a third vertex and a fourth vertex, and each internal angle of the non-regular octagon is 135 degrees.
Step S202: and determining the position of the non-regular octagon by determining that a connecting line of the first vertex and the second vertex is parallel to a connecting line of any two adjacent intersection points in the cross section, wherein the intersection points are the intersection points of the edge lines of the surface of the single crystal silicon rod and the cross section.
Specifically, referring to fig. 4, E, F, G, H is the intersection point of the edge line of the surface of the single crystal silicon rod and the cross section, and the connecting line AB of the first vertex a and the second vertex B is parallel to the connecting line EF of the intersection point E and the intersection point F.
The edge lines are formed during formation of the single crystal silicon rod, that is, during crystal growth, and four edge lines are formed on each single crystal silicon rod.
Step S203: and cutting the single crystal silicon rod along the non-regular octagon to obtain a pretreated single crystal silicon rod.
Step S204: and slicing the pretreated silicon single crystal rod to obtain a silicon single crystal wafer with the front side being the non-regular octagon.
According to the method for manufacturing the monocrystalline silicon wafer, the connecting line of the first vertex and the second vertex is parallel to the connecting line of any two adjacent intersection points in the cross section of the non-regular octagon, the side length position of each side in the non-regular octagon is determined, the position of the non-regular octagon is further determined, the pretreated monocrystalline silicon rod is obtained, and when the pretreated monocrystalline silicon rod is sliced to obtain the non-regular octagon monocrystalline silicon wafer, the fragment rate is reduced, and the cost is saved.
On the basis of any one of the above embodiments, in an embodiment of the present application, the cutting the single crystal silicon rod along the non-regular octagon to obtain a pretreated single crystal silicon rod includes:
cutting the silicon single crystal rod along the non-regular octagon to obtain an opened silicon single crystal rod;
and forming a chamfer on the cut single crystal silicon rod to obtain the pretreated single crystal silicon rod.
In the present embodiment, the chamfer formed on the single crystal silicon rod after the slicing is not particularly limited, as the case may be. For example, the chamfer formed on the single crystal silicon rod after the slicing can be a chamfered angle or a rounded angle. The chamfer is formed on the cut monocrystalline silicon rod, so that the corners of the obtained non-regular octagonal monocrystalline silicon wafer can be smooth, the monocrystalline silicon wafer can be contacted or carried without being scratched easily, the safety is higher, the fragment rate of the monocrystalline silicon wafer can be reduced, and the cost is saved.
Referring to fig. 5 and fig. 6, fig. 5 is a flowchart illustrating a method for cutting a battery piece according to an embodiment of the present disclosure, and fig. 6 is a schematic diagram illustrating a method for cutting a battery piece according to an embodiment of the present disclosure, where the method includes:
step S301: and obtaining a cell piece made of a monocrystalline silicon piece with a non-regular octagonal front surface, wherein the monocrystalline silicon piece is made by any one of the above monocrystalline silicon piece manufacturing methods.
Specifically, a non-regular octagonal monocrystalline silicon wafer is subjected to texturing, diffusion, plasma etching, surface film forming, electrode printing, sintering and other processes to prepare a battery piece.
Step S302: and cutting the battery pieces to obtain a first battery piece in a rectangular shape and four equal second battery pieces in a right trapezoid shape, wherein any two of the second battery pieces in the right trapezoid shape can be spliced into a third battery piece with the same width as the first battery piece.
Specifically, referring to fig. 6, the battery piece is cut to obtain a first battery piece 11 in a rectangular shape and four equal second battery pieces 12 in a right trapezoid shape.
According to the cutting method of the cell, the first cell and the second cell are obtained, the plurality of first cells and the plurality of second cells can be spliced seamlessly respectively, and the requirements of the solar cell module are met.
On the basis of the foregoing embodiment, in an embodiment of the present application, after the cutting the battery pieces to obtain a first battery piece in a rectangular shape and four equal second battery pieces in a right trapezoid shape, and any two of the second battery pieces in the right trapezoid shape can be spliced into a third battery piece with a width equal to that of the first battery piece, the method further includes:
cutting the first battery piece to form a first battery piece with four corners being reverse right angles;
and cutting the second battery piece to form the second battery piece with four corners being reverse right angles.
In this embodiment, form first battery piece and second battery piece and have the battery piece of chamfer for the battery piece corner becomes slick and sly, can be on the one hand difficult by the fish tail in contact or transport battery piece, and is safer, and the third battery piece that two second battery pieces of on the other hand concatenation formed for the battery piece that has the chamfer, when making solar module with first battery piece and the third battery piece that will have the chamfer, can reduce the piece rate of battery piece again, practices thrift the cost.
Referring to fig. 7 to 10, fig. 7 is a schematic diagram illustrating a crystalline silicon cell in a solar cell module spliced by using a third cell, fig. 8 is another schematic diagram illustrating a crystalline silicon cell in a solar cell module spliced by using a third cell, fig. 9 is another schematic diagram illustrating a crystalline silicon cell in a solar cell module spliced by using a third cell, and fig. 10 is a schematic diagram illustrating a crystalline silicon cell in a solar cell module spliced by using a first cell.
The application also provides a solar cell module, including from top to bottom stacked gradually upper substrate, first rete, crystal silicon battery, second rete, backplate, just crystal silicon battery is for being formed by the concatenation of a plurality of first battery pieces or by a plurality of the concatenation of third battery piece forms, wherein, first battery piece with the battery piece that the cutting method of third battery piece for adopting above-mentioned any kind of battery piece obtained.
In the present embodiment, the arrangement specification of the crystalline silicon battery is not particularly limited, as the case may be. For example, when the crystalline silicon cell is formed by splicing a plurality of first cell pieces, the arrangement specification of the crystalline silicon cell may be 36 × 6, or 20 × 8, and so on.
Referring to fig. 7 to 9, when the crystalline silicon battery is formed by splicing a plurality of the third battery pieces 13, the arrangement of the third battery pieces 13 is not particularly limited, as the case may be.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The monocrystalline silicon wafer and the manufacturing method thereof, the cutting method of the cell and the solar cell module provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (9)
1. The monocrystalline silicon piece is characterized in that the front side of the monocrystalline silicon piece is a non-regular octagon, the distance between a first vertex and a second vertex of the non-regular octagon is one third of the distance between a third vertex and a fourth vertex, wherein the second vertex and the third vertex are adjacent to the first vertex, the fourth vertex is adjacent to the second vertex, and each internal angle of the non-regular octagon is 135 degrees.
2. The single crystal silicon wafer of claim 1 wherein the thickness of the single crystal silicon wafer ranges from 100 microns to 220 microns, inclusive.
3. The single-crystal silicon wafer according to claim 1, wherein the single-crystal silicon wafer is a single-crystal silicon wafer having a chamfer.
4. A method for manufacturing a single crystal silicon wafer, comprising:
defining an inscribed non-regular octagon in a cross section of one end of the single crystal silicon rod, wherein the distance between a first vertex and a second vertex of the non-regular octagon is one third of the distance between a third vertex and a fourth vertex, and each internal angle of the non-regular octagon is 135 degrees;
cutting the single crystal silicon rod along the non-regular octagon to obtain a pretreated single crystal silicon rod;
and slicing the pretreated silicon single crystal rod to obtain a silicon single crystal wafer with the front side being the non-regular octagon.
5. The method for manufacturing a single crystal silicon wafer according to claim 4, wherein a non-regular octagon inscribed in a cross section of one end of the single crystal silicon rod is defined, wherein a distance between a first vertex and a second vertex of the non-regular octagon is one third of a distance between a third vertex and a fourth vertex, and each inner angle of the non-regular octagon is 135 degrees, and then the method further comprises:
and determining the position of the non-regular octagon by determining that a connecting line of the first vertex and the second vertex is parallel to a connecting line of any two adjacent intersection points in the cross section, wherein the intersection points are the intersection points of the edge lines of the surface of the single crystal silicon rod and the cross section.
6. The method of claim 5, wherein the slicing the single crystal silicon rod along the non-regular octagon to obtain a pretreated single crystal silicon rod comprises:
cutting the silicon single crystal rod along the non-regular octagon to obtain an opened silicon single crystal rod;
and forming a chamfer on the cut single crystal silicon rod to obtain the pretreated single crystal silicon rod.
7. A method for cutting a battery piece is characterized by comprising the following steps:
obtaining a cell piece made of a single crystal silicon wafer having a front surface of a non-regular octagon, wherein the single crystal silicon wafer is a single crystal silicon wafer made by the method for manufacturing a single crystal silicon wafer according to any one of claims 4 to 6;
and cutting the battery pieces to obtain a first battery piece in a rectangular shape and four equal second battery pieces in a right trapezoid shape, wherein any two of the second battery pieces in the right trapezoid shape can be spliced into a third battery piece with the same width as the first battery piece.
8. The method for cutting battery pieces according to claim 7, wherein the step of cutting the battery pieces to obtain a first battery piece with a rectangular shape and four equal second battery pieces with a right-angled trapezoid shape, and the step of splicing any two of the second battery pieces with the right-angled trapezoid shape into a third battery piece with a width equal to that of the first battery piece further comprises the following steps:
cutting the first battery piece to form a first battery piece with four corners being reverse right angles;
and cutting the second battery piece to form the second battery piece with four corners being reverse right angles.
9. The utility model provides a solar module which characterized in that, includes from top to bottom stacked gradually upper substrate, first rete, crystal silicon battery, second rete, backplate, just crystal silicon battery is formed or is by a plurality of by the concatenation of a plurality of first battery piece the concatenation of third battery piece forms, wherein, first battery piece with the third battery piece is for adopting the battery piece that the cutting method of battery piece obtained as claim 7 or 8.
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| CN111276570A (en) * | 2020-02-17 | 2020-06-12 | 浙江爱旭太阳能科技有限公司 | Manufacturing method of chamfer-free battery strip, laminated battery string and laminated assembly |
| PL442619A1 (en) * | 2022-10-24 | 2024-04-29 | Uniwersytet Przyrodniczy W Lublinie | Method of cutting a monocrystalline cell, monocrystalline cell and method of assembling a photovoltaic panel module from monocrystalline cells |
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| CN102945868A (en) * | 2012-10-26 | 2013-02-27 | 晶澳太阳能有限公司 | Orthohexagonal crystal silicon solar wafer and solar battery manufactured thereby |
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Address after: No. 1, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee after: Jingke Energy Co.,Ltd. Patentee after: ZHEJIANG JINKO SOLAR Co.,Ltd. Address before: 334100, No. 1, crystal Road, Shangrao Economic Development Zone, Jiangxi, China Patentee before: JINKO SOLAR Co.,Ltd. Patentee before: ZHEJIANG JINKO SOLAR Co.,Ltd. |