CN109861566A - A kind of circuit of synchronous rectification, synchronous rectification method and wireless charging device - Google Patents
A kind of circuit of synchronous rectification, synchronous rectification method and wireless charging device Download PDFInfo
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- CN109861566A CN109861566A CN201910243377.2A CN201910243377A CN109861566A CN 109861566 A CN109861566 A CN 109861566A CN 201910243377 A CN201910243377 A CN 201910243377A CN 109861566 A CN109861566 A CN 109861566A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a kind of circuit of synchronous rectification, synchronous rectification method and wireless charging devices, including bridge rectifier, synchronous rectification detection circuit and the full-controlled rectifier driving circuit being made of 4 metal-oxide-semiconductors；The input of bridge rectifier is the output of secondary side series resonant tank；Synchronous rectification detection circuit, including the first synchronous rectification detection module and the second synchronous rectification detection module, first synchronous rectification detection module is used to detect the drain-source voltage of third metal-oxide-semiconductor T3 and exports the first driving signal, and the second synchronous rectification detection module is used to detect the drain-source voltage of the 4th metal-oxide-semiconductor T4 and exports the second driving signal；Full-controlled rectifier driving circuit, for the first metal-oxide-semiconductor group and the second metal-oxide-semiconductor group will to be respectively driven after the first driving signal and the amplification of the second driving signal.This invention simplifies overall structures, reduce system control difficulty, improve system efficiency of transmission.
Description
Technical field
The invention belongs to wireless power transmission fields, and in particular to a kind of circuit of synchronous rectification, synchronous rectification method and nothing
Line charge electric installation.
Background technique
Wireless power transmission is that the transmitting of electric energy is realized using electromagnetic field as medium.For radio energy transmission system, need
Transformer is primary, secondary winding is separated, pass through the coupled transfer electric energy of high frequency magnetic field.With conventional contact electric energy transmission system
Compare, wireless power transmission is used conveniently and safely, no-spark and Danger Electric shock risk, without dust accumulation and contact loss, without mechanical wear and
Corresponding maintenance issues are suitable for a variety of adverse circumstances and weather.
Unmanned automatic charging and mobile charging are easy to implement applied to the wireless charging device in batter-charghing system.Nothing
The efficiency of transmission of line charge electric installation is that an important performance assessment criteria of system shows if the efficiency of transmission of system is lower
More electric energy is converted to thermal energy and is consumed in energy transport, the accumulation of thermal energy so as to cause system temperature raising shadow
Acoustic system operation.In battery wireless charging system, it usually needs realize the multi-phase containment of constant pressure and flow, and improve system as far as possible
The efficiency of transmission of system, to various topological structures and control method occur, typical method such as in launching circuit and is received back
DC/DC circuit is placed on road respectively, can control the output voltage of device using circuit DC/DC circuit is received, while walking by equal
Device maximum transmitted efficiency can be achieved to search for minimum input current point in the long output voltage for adjusting launching circuit DC/DC circuit,
But this method adjustment process is slow, and system complex；Also there is the DC/DC circuit for saving and receiving circuit, rectified using half control
The maximum transmitted efficiency of circuit realization system；Launching circuit DC/DC circuit is also saved, system is realized by the converter of DC/DC
The charge control and maximum transmitted efficiency of the constant pressure and flow of system；But the topological structure of these methods and control system are all relatively more multiple
It is miscellaneous.
Summary of the invention
It is an object of the invention in view of the above problems and insufficient, propose a kind of circuit of synchronous rectification, synchronize it is whole
Stream method and wireless charging device, simplify overall structure, reduce system control difficulty, improve system efficiency of transmission.
To achieve the goals above, the technical solution adopted by the present invention is that: a kind of circuit of synchronous rectification, including by 4 MOS
Bridge rectifier, synchronous rectification detection circuit and the full-controlled rectifier driving circuit of pipe composition, 4 metal-oxide-semiconductors are respectively the first MOS
Pipe T1, the second metal-oxide-semiconductor T2, third metal-oxide-semiconductor T3 and the 4th metal-oxide-semiconductor T4, the second metal-oxide-semiconductor T2 and third metal-oxide-semiconductor T3 are the first metal-oxide-semiconductor
Group, the first metal-oxide-semiconductor T1 and the 4th metal-oxide-semiconductor T4 are the second metal-oxide-semiconductor group；
The input of bridge rectifier is the output of secondary side series resonant tank；
Synchronous rectification detection circuit, including the first synchronous rectification detection module and the second synchronous rectification detection module, first
Synchronous rectification detection module be used for detect third metal-oxide-semiconductor T3 drain-source voltage and export the first driving signal, second synchronize it is whole
Stream detection module is used to detect the drain-source voltage of the 4th metal-oxide-semiconductor T4 and exports the second driving signal；
Full-controlled rectifier driving circuit, for first will to be respectively driven after the first driving signal and the amplification of the second driving signal
Metal-oxide-semiconductor group and the second metal-oxide-semiconductor group.
Above-mentioned technical proposal is further improved, full-controlled rectifier driving circuit includes that the first drive amplification module and second drive
Dynamic amplification module；
First driving signal and the second driving signal phase and the rear cut-off signals that export are to the first drive module and second
Drive module；First driving signal exports respectively to the low side of the first drive amplification module and inputs LI1 and the second drive amplification mould
The high-end input HI2 of block, the grid G 3 of the low side output LO1 connection third metal-oxide-semiconductor T3 of the first drive amplification module, the second driving
The grid G 2 of the second metal-oxide-semiconductor of high-end output HO2 connection T2 of amplification module；Second driving signal is exported respectively to the first driving and is put
The high-end input HI1 of big module and the low side of the second drive amplification module input LI2, the high-end output of the first drive amplification module
The grid G 1 of HO1 the first metal-oxide-semiconductor of connection T1, the grid of low side output the 4th metal-oxide-semiconductor T4 of LO2 connection of the second drive amplification module
G4.By the first driving signal and the second driving signal phase and rear output cut-off signals, the first drive amplification module and second is controlled
The working condition of drive amplification module avoids the metal-oxide-semiconductor of same bridge arm from simultaneously turning on.
Further, the first synchronous rectification detection module and the second synchronous rectification detection module use model IR11672 core
Piece.
Further, the first drive amplification module and the second drive amplification module use model IR2110 chip.
It further, further include filter regulator circuit, filter regulator circuit uses the second filtering voltage regulation capacitor C2, and bridge-type is whole
The output of current circuit connects the second filtering voltage regulation capacitor C2.The output of bridge rectifier is filtered using filter regulator circuit steady
Pressure, output steady dc voltage are load supplying.
The present invention provides a kind of synchronous rectification method of circuit of synchronous rectification, includes the following steps:
(1) drain-source voltage for detecting third metal-oxide-semiconductor T3 and the 4th metal-oxide-semiconductor T4 in bridge rectifier, according to the 3rd MOS
The drain-source voltage of pipe T3 and the 4th metal-oxide-semiconductor T4 export the first driving signal and the second driving signal respectively；Work as drain-source voltage
VDSLess than second threshold voltage VTH2When, driving signal exports high level；As source-drain voltage VDSGreater than first threshold voltage VTH1
When, driving signal exports low level；As source-drain voltage VDSGreater than third threshold voltage VTH3When, allow output driving letter again
Number；
(2) by the first driving signal and the second driving signal phase and rear output cut-off signals, the first drive amplification mould is controlled
Work/shutdown of block and the second drive amplification module；When the first driving signal and the second driving signal are high level, first
Drive amplification module and the second drive amplification module are turned off and do not work；When the first driving signal or the output of the second driving signal are high
When level, the first drive amplification module and the second drive amplification module are in working condition；
First driving signal drives third metal-oxide-semiconductor T3 after the amplification of the low side of the first drive amplification module, while first drives
Dynamic signal drives the second metal-oxide-semiconductor T2 after the high-end amplification of the second drive amplification module；Second driving signal is put through the first driving
The first metal-oxide-semiconductor T1 is driven after the high-end amplification of big module, the second driving signal is after the amplification of the low side of the second drive amplification module
Drive the 4th metal-oxide-semiconductor T4.
The present invention provides a kind of wireless charging device using the circuit of synchronous rectification, including transmitting terminal and receiving end；
Transmitting terminal include sequentially connected input supply voltage Vin, the first filtering voltage regulation capacitor C1, full bridge inverter,
Primary side series resonant tank, transmitting terminal further include the transmitting terminal signal acquisition for acquiring primary side series resonant tank current signal
Circuit, transmitting side controller, full-bridge inverting driving circuit and radio receiving transmitting module, transmitting terminal signal acquisition circuit, full-bridge inverting
Driving circuit and radio receiving transmitting module are connect with transmitting side controller respectively；
Receiving end include sequentially connected secondary side series resonant tank, circuit of synchronous rectification, the second filtering voltage regulation capacitor C2,
Output supply voltage Vout and load；Receiving end further includes the receiving end signal acquisition for acquiring output electric current and voltage signal
Circuit receives side controller and radio receiving transmitting module, receiving end signal Acquisition Circuit, radio receiving transmitting module and circuit of synchronous rectification
In synchronous rectification detection circuit respectively with receive side controller connect.
Beneficial effects of the present invention: the present invention uses the bridge rectifier being made of metal-oxide-semiconductor, detects in conjunction with synchronous rectification
Circuit and full-controlled rectifier driving circuit are rectified, and system structure is simplified, and reduce loss, improve system efficiency of transmission；
It is communicated between transmitting terminal of the present invention and receiving end by radio receiving transmitting module, it is negative in transmitting terminal and receiving end relative position and charging
In the case that load changes, realized by adjusting switching frequency and the bridge Phase shifted PWM Controlled angle of transmitting terminal full bridge inverter
Optimum transmission efficiency reduces the control difficulty of system.
Detailed description of the invention
Fig. 1 is the circuit diagram of circuit of synchronous rectification of the present invention；
Fig. 2 is IR11672 chip and IR2110 chip pin figure in Fig. 1；
Fig. 3 is the waveform diagram of Fig. 1；
Fig. 4 is the wireless charging device circuit diagram using the circuit of synchronous rectification of Fig. 1.
Specific embodiment
To keep the content of the invention clearer, with reference to the accompanying drawing, to the specific embodiment of the invention
It is described in further detail.It should be noted that for purposes of clarity, being omitted in attached drawing and explanation unrelated with the invention
, the expression and description of component known to persons of ordinary skill in the art.
Embodiment 1:
A kind of circuit of synchronous rectification provided by the invention, as shown in Figure 1, including the bridge rectifier electricity being made of 4 metal-oxide-semiconductors
Road, synchronous rectification detection circuit and full-controlled rectifier driving circuit, 4 metal-oxide-semiconductors be respectively the first metal-oxide-semiconductor T1, the second metal-oxide-semiconductor T2,
Third metal-oxide-semiconductor T3 and the 4th metal-oxide-semiconductor T4, the second metal-oxide-semiconductor T2 and third metal-oxide-semiconductor T3 be the first metal-oxide-semiconductor group, the first metal-oxide-semiconductor T1 and
4th metal-oxide-semiconductor T4 is the second metal-oxide-semiconductor group；
The input of bridge rectifier is the output of secondary side series resonant tank；
Synchronous rectification detection circuit, including the first synchronous rectification detection module and the second synchronous rectification detection module, first
Synchronous rectification detection module be used for detect third metal-oxide-semiconductor T3 drain-source voltage and export the first driving signal, second synchronize it is whole
Stream detection module is used to detect the drain-source voltage of the 4th metal-oxide-semiconductor T4 and exports the second driving signal；
Full-controlled rectifier driving circuit, for first will to be respectively driven after the first driving signal and the amplification of the second driving signal
Metal-oxide-semiconductor group and the second metal-oxide-semiconductor group.Full-controlled rectifier driving circuit includes the first drive amplification module and the second drive amplification module；
First driving signal and the second driving signal phase and the rear cut-off signals that export are to the first drive module and the second drive module；
First driving signal exports respectively to the low side of the first drive amplification module and inputs the high-end defeated of LI1 and the second drive amplification module
Enter HI2, the low side of the first drive amplification module exports the grid G 3 of LO1 connection third metal-oxide-semiconductor T3, the second drive amplification module
The grid G 2 of the second metal-oxide-semiconductor of high-end output HO2 connection T2；Second driving signal is exported respectively to the height of the first drive amplification module
End input HI1 and the low side of the second drive amplification module input LI2, the high-end output HO1 connection of the first drive amplification module the
The grid G 1 of one metal-oxide-semiconductor T1, the grid G 4 of low side output the 4th metal-oxide-semiconductor T4 of LO2 connection of the second drive amplification module.
Circuit of synchronous rectification further includes filter regulator circuit, and filter regulator circuit uses the second filtering voltage regulation capacitor C2, bridge
The output of formula rectification circuit connects the second filtering voltage regulation capacitor C2.
As shown in Fig. 2, the first synchronous rectification detection module and the second synchronous rectification detection module use model IR11672 core
Piece, the first drive amplification module and the second drive amplification module use model IR2110 chip；
The 5 foot VD (FET drain test side) of first synchronous rectification detection module are connected to the drain electrode of third metal-oxide-semiconductor T3, the
The 6 foot VS (FET source test side) of one synchronous rectification detection module are connected to the source electrode of third metal-oxide-semiconductor T3；Second synchronous rectification
The 5 foot VD (FET drain test side) of detection module are connected to the drain electrode of the 4th metal-oxide-semiconductor T4, and the 6 of the second synchronous rectification detection module
Foot VS (FET source test side) is connected to the source electrode of the 4th metal-oxide-semiconductor T4；8 foot VGATE of the first synchronous rectification detection module are exported
8 foot VGATE of the first driving signal, the second synchronous rectification detection module export the second driving signal.By IR11672 chip come
The drain-source voltage of real-time detection third metal-oxide-semiconductor T3 and the 4th metal-oxide-semiconductor T4 simultaneously export corresponding driving signal.
First driving signal and the second driving signal are connected to the input with door, and the output with door is separately connected the first driving
11 foot SD1 of amplification module (shutdown end) and 11 foot SD2 of the second drive amplification module (shutdown end).When the first driving signal and second
When driving signal is high level, the two phase and rear output high level signal to the end SD of drive amplification module, so that driving is put
Big module shutdown does not work, and the metal-oxide-semiconductor of same bridge arm is avoided to simultaneously turn on.
8 foot VGATE of the first synchronous rectification detection module are separately connected 12 foot LI1 (low sides of the first drive amplification module
Input) and the second drive amplification module 10 foot HI2 (high-end input), the 1 foot LO1 (low side output) of the first drive amplification module
Connect the grid of third metal-oxide-semiconductor T3, the grid of the second metal-oxide-semiconductor T2 of 7 foot HO2 (high-end output) connection of the second drive amplification module
Pole；8 foot VGATE of the second synchronous rectification detection module are separately connected the 10 foot HI1 (high-end input) of the first drive amplification module
With the 12 foot LI2 (low side input) of the second drive amplification module, 7 foot HO1 (high-end output) connection of the first drive amplification module
The grid of first metal-oxide-semiconductor T1, the grid of the 4th metal-oxide-semiconductor T4 of 1 foot LO2 (low side output) connection of the second drive amplification module.It adopts
With two IR2110 chips the first metal-oxide-semiconductor group and second will be respectively driven after the first driving signal and the amplification of the second driving signal
Metal-oxide-semiconductor group, to realize the rectification to secondary side series resonant tank output electric current.
A kind of method for rectifying using above-mentioned circuit of synchronous rectification, includes the following steps:
(1) drain-source voltage for detecting third metal-oxide-semiconductor T3 and the 4th metal-oxide-semiconductor T4 in bridge rectifier, according to the 3rd MOS
The drain-source voltage of pipe T3 and the 4th metal-oxide-semiconductor T4 export the first driving signal and the second driving signal respectively；Work as drain-source voltage
VDSLess than second threshold voltage VTH2When, driving signal exports high level；As source-drain voltage VDSGreater than first threshold voltage VTH1
When, driving signal exports low level；As source-drain voltage VDSGreater than third threshold voltage VTH3When, allow output driving letter again
Number；
(2) by the first driving signal and the second driving signal phase and rear output cut-off signals, the first drive amplification mould is controlled
Work/shutdown of block and the second drive amplification module；When the first driving signal and the second driving signal are high level, first
Drive amplification module and the second drive amplification module are turned off and do not work；When the first driving signal or the output of the second driving signal are high
When level, the first drive amplification module and the second drive amplification module are in working condition；
First driving signal drives third metal-oxide-semiconductor T3 after the amplification of the low side of the first drive amplification module, while first drives
Dynamic signal drives the second metal-oxide-semiconductor T2 after the high-end amplification of the second drive amplification module；Second driving signal is put through the first driving
The first metal-oxide-semiconductor T1 is driven after the high-end amplification of big module, the second driving signal is after the amplification of the low side of the second drive amplification module
Drive the 4th metal-oxide-semiconductor T4.
The specific working principle is as follows: secondary side series resonant tank exports sine-wave current, in the lower half of sine wave, the
Diode current flow in two metal-oxide-semiconductor T2 and third metal-oxide-semiconductor T3 body, IR11672 chip detect third metal-oxide-semiconductor T3 drain-source voltage, warp
Crossing chip interior comparison operation and exporting the first driving signal is high level, thus the first metal-oxide-semiconductor group ON operation of driving；Work as sine
When wave is close to zero crossing, since current value reduces, the conduction voltage drop of metal-oxide-semiconductor is the product for flowing through electric current and conducting resistance, is caused
Drain-source voltage reduces, and it is low level that IR11672 chip, which exports the first driving signal through internal comparison operation, thus the first MOS
The cut-off of pipe group does not work；Equally, in sine wave upper half, diode current flow in the first metal-oxide-semiconductor T1 and the 4th metal-oxide-semiconductor T4 body,
IR11672 chip detects the 4th metal-oxide-semiconductor T4 drain-source voltage, and exporting the second driving signal by chip interior comparison operation is height
Level, thus the second metal-oxide-semiconductor group ON operation of driving；When sine wave is close to zero crossing, the second driving signal is low level, from
And the cut-off of the second metal-oxide-semiconductor group does not work；Thus, synchronous rectification detection circuit realizes the Zero-cross comparator function of sine wave signal,
So that the alternate conduction of the first metal-oxide-semiconductor group and the second metal-oxide-semiconductor group rectifies.As shown in figure 3, IDSFor sine-wave current, VDSFor electric current
IDSThe drain-source voltage of metal-oxide-semiconductor formation is flowed through, Gate Drive is the driving signal of IR11672 chip output, and MOT is driving letter
Number minimum service time.As drain-source voltage VDSLess than second threshold voltage VTH2, driving signal output high level make metal-oxide-semiconductor
It is connected, diode cut-off in metal-oxide-semiconductor body；As drain-source voltage VDSGreater than first threshold voltage VTH1When, driving signal exports low electricity
It is flat so that metal-oxide-semiconductor ends, diode current flow in metal-oxide-semiconductor body；As drain-source voltage VDSGreater than third threshold voltage VTH3Afterwards, allow
Output drive signal again, locking time tBLANK。
A kind of wireless charging device using above-mentioned circuit of synchronous rectification, as shown in figure 4, including transmitting terminal and receiving end；
Transmitting terminal include sequentially connected input supply voltage Vin, the first filtering voltage regulation capacitor C1, full bridge inverter,
Primary side series resonant tank, transmitting terminal further include the transmitting terminal signal acquisition for acquiring primary side series resonant tank current signal
Circuit, transmitting side controller, full-bridge inverting driving circuit and radio receiving transmitting module, transmitting terminal signal acquisition circuit, full-bridge inverting
Driving circuit and radio receiving transmitting module are connect with transmitting side controller respectively.The current signal of primary side series resonant tank is by electric current
Mutual inductor CT and the acquisition of transmitting terminal signal acquisition circuit are input to the A/D translation interface of transmitting side controller, emit side controller
The switching frequency of full bridge inverter is adjusted according to sampled current value.
Receiving end include sequentially connected secondary side series resonant tank, circuit of synchronous rectification, the second filtering voltage regulation capacitor C2,
Output supply voltage Vout and load.Receiving end further includes the receiving end signal acquisition for acquiring output electric current and voltage signal
Circuit, reception side controller and radio receiving transmitting module, output current signal are acquired by Hall sensor HT；Receiving end signal acquisition
Circuit, radio receiving transmitting module and circuit of synchronous rectification are connect with reception side controller respectively.Receiving end signal Acquisition Circuit is to suddenly
Input receives side controller after the output signal and output supply voltage Vout of your current sensor HT is acquired conditioning, receives
Side controller carries out A/D conversion to the output signal of receiving end signal Acquisition Circuit, while will be received by radio receiving transmitting module
Client information is transmitted to transmitting side controller, and transmitting side controller carries out phase shifting angle according to the arrival current voltage signal received
It adjusts.
Design parameter of the invention: input supply voltage Vin is DC48V, the filtering of the first filtering voltage regulation capacitor C1 and second
Electric capacity of voltage regulation C2 is 330uF, what 4 switching tubes of full bridge inverter and 4 switching tubes of circuit of synchronous rectification were all made of
The MOSFET of model FDP045N10A, transmitting terminal resonant capacitance CS1Capacitance be 1.4uF, receiving end resonant capacitance CS2's
Capacitance is 1.2uF, and transmitting side controller main control chip is TMS320F28035, and the main control chip for receiving side controller is
STM32F103, full-bridge inverting driving circuit use IR2110 chip, and radio receiving transmitting module uses NRF24L01 chip；Output electricity
Source voltage Vout is DC30V, power 500W, efficiency 88%.
Only express the embodiment of the invention above, the description thereof is more specific and detailed, but can not therefore and
It is interpreted as the limitation to patented invention-creation range.It should be pointed out that for those of ordinary skill in the art, not
Under the premise of being detached from the invention design, various modifications and improvements can be made, these belong to the guarantor of the invention
Protect range.Therefore, the scope of protection shall be subject to the appended claims for the invention patent.
Claims (7)
1. a kind of circuit of synchronous rectification, it is characterised in that: including be made of 4 metal-oxide-semiconductors bridge rectifier, synchronous rectification inspection
Slowdown monitoring circuit and full-controlled rectifier driving circuit, 4 metal-oxide-semiconductors be respectively the first metal-oxide-semiconductor T1, the second metal-oxide-semiconductor T2, third metal-oxide-semiconductor T3 and
4th metal-oxide-semiconductor T4, the second metal-oxide-semiconductor T2 and third metal-oxide-semiconductor T3 are the first metal-oxide-semiconductor group, and the first metal-oxide-semiconductor T1 and the 4th metal-oxide-semiconductor T4 are
Second metal-oxide-semiconductor group；
The input of bridge rectifier is the output of secondary side series resonant tank；
Synchronous rectification detection circuit, including the first synchronous rectification detection module and the second synchronous rectification detection module, first is synchronous
Rectification detection module is used to detect the drain-source voltage of third metal-oxide-semiconductor T3 and exports the first driving signal, the second synchronous rectification inspection
Module is surveyed to be used to detect the drain-source voltage of the 4th metal-oxide-semiconductor T4 and export the second driving signal；
Full-controlled rectifier driving circuit, for the first metal-oxide-semiconductor will to be respectively driven after the first driving signal and the amplification of the second driving signal
Group and the second metal-oxide-semiconductor group.
2. circuit of synchronous rectification according to claim 1, it is characterised in that: full-controlled rectifier driving circuit includes the first driving
Amplification module and the second drive amplification module；
First driving signal and the second driving signal phase and rear output cut-off signals to the first drive module and second drive
Module；First driving signal exports respectively to the low side of the first drive amplification module and inputs LI1 and the second drive amplification module
High-end input HI2, the grid G 3 of the low side output LO1 connection third metal-oxide-semiconductor T3 of the first drive amplification module, the second drive amplification
The grid G 2 of the second metal-oxide-semiconductor of high-end output HO2 connection T2 of module；Second driving signal is exported respectively to the first drive amplification mould
The high-end input HI1 of block and the low side of the second drive amplification module input LI2, the high-end output HO1 of the first drive amplification module
Connect the grid G 1 of the first metal-oxide-semiconductor T1, the grid G 4 of low side output the 4th metal-oxide-semiconductor T4 of LO2 connection of the second drive amplification module.
3. circuit of synchronous rectification according to claim 2, it is characterised in that: the first synchronous rectification detection module and second is together
Step rectification detection module uses model IR11672 chip.
4. circuit of synchronous rectification according to claim 2, it is characterised in that: the first drive amplification module and the second driving are put
Big module uses model IR2110 chip.
5. circuit of synchronous rectification described in -4 any claims according to claim 1, it is characterised in that: further include filtering voltage regulation
Circuit, filter regulator circuit use the second filtering voltage regulation capacitor C2, and the output of bridge rectifier connects the second filtering voltage regulation electricity
Hold C2.
6. a kind of synchronous rectification method of circuit of synchronous rectification described in claim 1-5 any claim, which is characterized in that
Include the following steps:
(1) drain-source voltage for detecting third metal-oxide-semiconductor T3 and the 4th metal-oxide-semiconductor T4 in bridge rectifier, according to third metal-oxide-semiconductor T3
The first driving signal and the second driving signal are exported respectively with the drain-source voltage of the 4th metal-oxide-semiconductor T4；As drain-source voltage VDSIt is small
In second threshold voltage VTH2When, driving signal exports high level；As source-drain voltage VDSGreater than first threshold voltage VTH1When, it drives
Dynamic signal exports low level；As source-drain voltage VDSGreater than third threshold voltage VTH3When, allow output drive signal again；
(2) by the first driving signal and the second driving signal phase and rear output cut-off signals, the first drive amplification module of control and
Work/shutdown of second drive amplification module；When the first driving signal and the second driving signal are high level, the first driving
Amplification module and the second drive amplification module are turned off and do not work；When the first driving signal or the second driving signal export high level
When, the first drive amplification module and the second drive amplification module are in working condition；
First driving signal drives third metal-oxide-semiconductor T3, while the first driving letter after the amplification of the low side of the first drive amplification module
Number the second metal-oxide-semiconductor T2 is driven after the high-end amplification of the second drive amplification module；Second driving signal is through the first drive amplification mould
The first metal-oxide-semiconductor T1 is driven after the high-end amplification of block, the second driving signal drives after the amplification of the low side of the second drive amplification module
4th metal-oxide-semiconductor T4.
7. a kind of wireless charging device using circuit of synchronous rectification described in claim 1-5 any claim, feature exist
In: including transmitting terminal and receiving end；
Transmitting terminal includes sequentially connected input supply voltage Vin, the first filtering voltage regulation capacitor C1, full bridge inverter, primary side
Series resonant tank, transmitting terminal further include the transmitting terminal signal acquisition electricity for acquiring primary side series resonant tank current signal
Road, transmitting side controller, full-bridge inverting driving circuit and radio receiving transmitting module, transmitting terminal signal acquisition circuit, full-bridge inverting drive
Dynamic circuit and radio receiving transmitting module are connect with transmitting side controller respectively；
Receiving end includes sequentially connected secondary side series resonant tank, circuit of synchronous rectification, the second filtering voltage regulation capacitor C2, output
Supply voltage Vout and load；Receiving end further includes the receiving end signal acquisition electricity for acquiring output electric current and voltage signal
Road receives side controller and radio receiving transmitting module, in receiving end signal Acquisition Circuit, radio receiving transmitting module and circuit of synchronous rectification
Synchronous rectification detection circuit respectively with receive side controller connect.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN114094838A (en) * | 2021-11-15 | 2022-02-25 | 珠海格力电器股份有限公司 | Synchronous rectification control method, circuit, device, equipment and storage medium |
| CN114094838B (en) * | 2021-11-15 | 2023-09-12 | 珠海格力电器股份有限公司 | Synchronous rectification control method, circuit, device, equipment and storage medium |
| EP4220926A1 (en) * | 2022-01-28 | 2023-08-02 | Nxp B.V. | Electronic circuit with electromagnetic interference detection and suppression and method therefor |
| US11784578B2 (en) | 2022-01-28 | 2023-10-10 | Nxp B.V. | Electronic circuit with electromagnetic interference detection and suppression and method therefor |
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