CN109860220B - Semiconductor device, manufacturing method thereof and wearable equipment - Google Patents
Semiconductor device, manufacturing method thereof and wearable equipment Download PDFInfo
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- CN109860220B CN109860220B CN201910241613.7A CN201910241613A CN109860220B CN 109860220 B CN109860220 B CN 109860220B CN 201910241613 A CN201910241613 A CN 201910241613A CN 109860220 B CN109860220 B CN 109860220B
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Abstract
The invention discloses a semiconductor device, a manufacturing method thereof and wearable equipment. One embodiment of the semiconductor device includes: a transparent substrate; a sensing unit and a display unit formed on the substrate, wherein the display unit includes a red light emitting diode, a first green light emitting diode, and a blue light emitting diode, the sensing unit includes a second green light emitting diode, and a photodiode configured to receive light from the second green light emitting diode, wherein the red light emitting diode includes a red light emitting layer and an anode and a transparent cathode thereof; the blue light emitting diode comprises a blue light emitting layer and an anode and a cathode thereof; the first green light emitting diode and the second green light emitting diode include a green light emitting layer and an anode and a cathode thereof, respectively. The manufacturing method of the embodiment is simple in manufacturing process, high in manufacturing efficiency and low in manufacturing cost.
Description
Technical Field
The invention relates to the technical field of semiconductors. And more particularly, to a semiconductor device, a method of manufacturing the same, and a wearable device.
Background
At present, a lot of wearable equipment all have rhythm of heart to detect the function to intelligence wrist-watch or intelligent bracelet are for example, and the principle that its rhythm of heart detected is: blood is red, reflects red light and absorbs green light, and the blood circulation at the wrist is increased and more green light is absorbed at the heart beat at a moment compared with the heart beat interval. Based on this, the wrist is shone to the green glow that intelligence wrist-watch utilized green emitting diode (LED) to send, then utilizes the green glow of photodiode sensing wrist reflection, judges the heartbeat through the judgement to the reflection capacity of green glow to detect the rhythm of the heart, rethread display screen shows rhythm of the heart detection result.
The structure of current intelligent wrist-watch with heart rate detects the function does: the display screen of the watch is arranged on the outer side of the wrist (namely the front side of the wrist) and is used for displaying time, heart rate detection results and the like; and a sensing unit comprising a green LED and a photodiode is arranged towards the inside of the wrist, i.e. the back of the wrist, for detecting the heart rate. The display screen and the sensing unit are independently manufactured and then assembled, which inevitably causes the defects of poor integration level, high cost and the like.
Therefore, it is desirable to provide a new semiconductor device, a method for manufacturing the same, and a wearable device.
Disclosure of Invention
The invention aims to provide a semiconductor device, a manufacturing method thereof and wearable equipment, so as to solve at least one of the problems in the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
a first aspect of the present invention provides a semiconductor device comprising
A transparent substrate;
a sensing unit and a display unit formed on the substrate, wherein the display unit includes a red light emitting diode, a first green light emitting diode, and a blue light emitting diode, the sensing unit includes a second green light emitting diode, and a photodiode configured to receive light from the second green light emitting diode,
wherein
The red light-emitting diode comprises a red light-emitting layer, an anode and a transparent cathode thereof;
the blue light emitting diode comprises a blue light emitting layer and an anode and a cathode thereof;
the first green light emitting diode and the second green light emitting diode respectively comprise a green light emitting layer and an anode and a cathode thereof.
According to the semiconductor device provided by the first aspect of the invention, the red light-emitting diode, the green light-emitting diode and the blue light-emitting diode in the display unit of the wearable device with the heart rate detection function and the like, and the green light-emitting diode and the photodiode in the sensing unit can be integrated on the same substrate to form the semiconductor device.
Alternatively,
the green light emitting layers of the first green light emitting diode and the second green light emitting diode are arranged in the same layer and the same material.
By adopting the optional mode, the primary transfer printing step can be saved in the transfer printing process of the light-emitting diode, and the manufacturing process is further optimized.
Alternatively,
the sensing unit further comprises a reflecting layer arranged above the green light emitting layer of the second green light emitting diode and used for reflecting light emitted by the second green light emitting diode towards the direction far away from the substrate.
Alternatively,
the sensing unit further includes a transparent electrode disposed between the green emitting layer of the second green light emitting diode and the reflective layer,
the transparent electrode and the transparent cathode of the red light-emitting diode are arranged in the same layer and made of the same material.
By adopting the optional mode, the reflecting layer of the green light-emitting diode of the sensing unit and the cathode of the red light-emitting diode of the display unit are formed by the same layer and the same material, so that one mask process can be reduced, and the production efficiency is improved.
Alternatively,
the anode and the cathode of the second green light emitting diode and the first electrode of the photodiode are arranged on the same layer, and the material is transparent.
By adopting the alternative mode, the anode and the cathode of the green light emitting diode in the sensing unit and the first electrode of the photodiode can be formed in one-time composition process, and the manufacturing process is further optimized.
Alternatively,
the second electrode of the photodiode is arranged in the same layer with the anode of the red light-emitting diode, the anode and the cathode of the first green light-emitting diode and the anode and the cathode of the blue light-emitting diode.
With this alternative, the second electrode of the photodiode in the sensing unit, the anode of the red light emitting diode, the anode and the cathode of the green light emitting diode, and the anode and the cathode of the blue light emitting diode in the display unit can be formed in one patterning process, further optimizing the manufacturing process.
In a second aspect, the present invention provides a method for fabricating a semiconductor device, comprising
Forming a sensing unit and a display unit on a transparent substrate, wherein the display unit is formed to include a red light emitting diode, a first green light emitting diode, and a blue light emitting diode, the sensing unit is formed to include a second green light emitting diode, and a photodiode configured to receive light from the second green light emitting diode,
wherein
The red light emitting diode is formed to include a red light emitting layer and an anode and a transparent cathode thereof;
the blue light emitting diode is formed to include a blue light emitting layer and an anode and a cathode thereof;
the first green light emitting diode and the second green light emitting diode are formed to include a green light emitting layer and an anode and a cathode thereof, respectively.
According to the manufacturing method of the semiconductor device provided by the second aspect of the invention, the red light-emitting diode, the green light-emitting diode and the blue light-emitting diode in the display unit of the wearable device with the heart rate detection function and the like, and the green light-emitting diode and the photodiode in the sensing unit can be integrated on the same substrate to form the semiconductor device.
Optionally, the method further comprises forming a transistor structure layer on the substrate, including
Forming active regions and gates of the first to fifth transistors;
and forming source electrodes, drain electrodes, data lines, a first metal layer, a second metal layer and a third metal layer of the first transistor to the fifth transistor.
Optionally, the method further comprises forming a sensing unit and a display unit on the transistor structure layer, including
Forming a planarization layer;
forming a through hole in the planarization layer to expose the source electrodes of the first to fifth transistors and the first to third metal layers;
and simultaneously forming an anode of the second green light emitting diode, a cathode of the second green light emitting diode and a first electrode of the photodiode on a source electrode of the fourth transistor, a third metal layer and a source electrode of the fifth transistor respectively, wherein the anode, the cathode and the first electrode of the second green light emitting diode are made of transparent materials.
By adopting the alternative mode, the anode and the cathode of the green light emitting diode in the sensing unit and the first electrode of the photodiode can be formed in one-time composition process, and the manufacturing process is further optimized.
Optionally, forming a sensing unit and a display unit on the transistor structure layer further comprises
Forming a PIN layer on the first electrode;
and simultaneously forming an anode of the red light emitting diode, an anode of the first green light emitting diode, a cathode of the first green light emitting diode, an anode of the blue light emitting diode, a cathode of the blue light emitting diode and a second electrode of the photodiode on the source of the first transistor, the source of the second transistor, the first metal layer, the source of the third transistor, the second metal layer and the PIN layer respectively, wherein the anode of the red light emitting diode, the anode of the first green light emitting diode, the cathode of the first green light emitting diode, the anode of the blue light emitting diode, the cathode of the blue light emitting diode and the second electrode of the photodiode are made of opaque materials.
With this alternative, the second electrode of the photodiode in the sensing unit, the anode of the red light emitting diode, the anode and the cathode of the green light emitting diode, and the anode and the cathode of the blue light emitting diode in the display unit can be formed in one patterning process, further optimizing the manufacturing process.
Optionally, forming a sensing unit and a display unit on the transistor structure layer further comprises
Forming a pixel defining layer;
forming a through hole in the pixel defining layer to expose the anode of the red light emitting diode, the anode of the first green light emitting diode, the cathode of the first green light emitting diode, the anode of the blue light emitting diode, the cathode of the blue light emitting diode, the anode of the second green light emitting diode and the cathode of the second green light emitting diode;
transferring a red light emitting layer, a green light emitting layer and a blue light emitting layer onto the exposed anode of the red light emitting diode, the exposed anode and cathode of the first green light emitting diode, the exposed anode and cathode of the second green light emitting diode and the exposed anode and cathode of the blue light emitting diode, respectively, wherein the transferring of the green light emitting layer onto the anode and cathode of the first green light emitting diode and the transferring of the green light emitting layer onto the anode and cathode of the second green light emitting diode are performed simultaneously;
and forming a passivation layer to cover the light emitting layer.
By adopting the optional mode, the primary transfer printing step can be saved in the transfer printing process of the light-emitting diode, and the manufacturing process is further optimized.
Optionally, forming a sensing unit and a display unit on the transistor structure layer further comprises
Forming a through hole in the passivation layer to expose the red light emitting layer;
forming a cathode of a red light emitting diode on the red light emitting layer;
and forming a reflecting layer on the passivation layer corresponding to the green light emitting layer of the second green light emitting diode.
Alternatively,
forming a cathode of the red light emitting diode on the red light emitting layer and forming a reflective layer on a passivation layer corresponding to the green light emitting layer of the second green light emitting diode includes
Forming a cathode material of a red light emitting diode on the passivation layer and the red light emitting layer;
forming a reflective layer on the cathode material;
and photoetching by using a half-tone mask, removing the reflecting layer on the cathode material of the red light-emitting diode, and reserving the cathode material of the red light-emitting diode so as to form the cathode of the red light-emitting diode.
By adopting the optional mode, the upper electrode of the red light-emitting diode in the display unit and the reflecting layer of the green light-emitting diode in the sensing unit can be simultaneously formed in one process, so that the manufacturing process is further optimized.
The third aspect of the invention provides a wearable device comprising the semiconductor device provided by the first aspect of the invention.
The invention has the following beneficial effects:
according to the technical scheme, the display unit and the sensing unit in the wearable device and other products with the heart rate detection function are integrated on the same substrate, the semiconductor device is simple in manufacturing process, high in manufacturing efficiency and low in manufacturing cost, and products such as the wearable device and the like can be lighter and thinner and higher in integration level.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings;
fig. 1 to 7 are process diagrams illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
An embodiment of the present invention provides a method for manufacturing a semiconductor device, including:
a sensing unit 10 and a display unit 20 are formed on a transparent substrate, wherein the display unit 20 is formed to include a red light emitting diode, a first green light emitting diode, and a blue light emitting diode, the sensing unit 10 is formed to include a second green light emitting diode configured to receive light from the second green light emitting diode,
wherein
The red light emitting diode is formed to include a red light emitting layer and an anode and a transparent cathode thereof;
the blue light emitting diode is formed to include a blue light emitting layer and an anode and a cathode thereof;
the first green light emitting diode and the second green light emitting diode are formed to include a green light emitting layer and an anode and a cathode thereof, respectively.
According to the manufacturing method of the semiconductor device provided by the embodiment, the red light emitting diode, the green light emitting diode and the blue light emitting diode in the display unit 20 and the green light emitting diode and the photodiode in the sensing unit 10 in products such as wearable equipment with a heart rate detection function can be integrated on the same substrate to be formed, the manufacturing process of the semiconductor device is simple, the manufacturing efficiency is high, the manufacturing cost is low, and the products such as wearable equipment can be lighter and thinner and have higher integration level.
As a miniaturized product such as wearable equipment, the scheme of the invention can be realized by using Micro light-emitting diodes (Micro-LEDs), namely, the red, green and blue light-emitting diodes are the Micro-LEDs, and the manufacturing process is realized by using corresponding processes. The invention is not limited in this regard.
In some optional implementations of the present embodiment, the method further includes the sub-steps of forming a transistor structure layer on the transparent substrate and forming the sensing unit 10 and the display unit 20 on the transistor structure layer. In this embodiment, the Transistor is a Thin Film Transistor (TFT). Those skilled in the art will understand that the present invention is not limited to the specific structure of the transistor structure layer, and the following is only exemplary.
Step S1, forming the structure shown in fig. 1, including:
an active region 101 and a gate electrode 102 of the first TFT, an active region 103 and a gate electrode 104 of the second TFT, an active region 105 and a gate electrode 106 of the third TFT, an active region 107 and a gate electrode 108 of the fourth TFT, and an active region 109 and a gate electrode 110 of the fifth TFT are formed on a substrate 100.
Those skilled in the art will appreciate that the TFT structure of the present invention is not limited to the top gate structure shown in the drawings, but may be a bottom gate structure, and the present invention is not limited thereto.
The substrate 100 is a transparent substrate, which may be a rigid substrate (e.g., glass) or a flexible substrate.
Next, a source 111 and a drain 112 of the first TFT, a source 113 and a drain 114 of the second TFT, a source 115 and a drain 116 of the third TFT, a source 117 and a drain 118 of the fourth TFT, a source 119 and a drain 120 of the fifth TFT, and a data line (not shown in the figure), and a first metal layer 121, a second metal layer 122, and a third metal layer 123 are formed.
Taking the top gate structure shown in fig. 1 as an example, the specific forming process is as follows: forming active regions of the first to fifth TFTs on the substrate 100 through a one-time patterning process; forming a gate dielectric layer GI51 covering the active region; forming grid electrodes of the first TFT to the fifth TFT through a one-time composition process; forming an interlayer dielectric ILD52 covering the gate; forming a through hole through a primary patterning process, penetrating the interlayer dielectric ILD52 and the gate dielectric GI51, and exposing the active region; a metal material is deposited using, for example, a metal deposition process, and source electrodes, drain electrodes, data lines of the first to fifth TFTs, and the first, second, and third metal layers 121, 122, and 123 are formed through a single patterning process.
Step S2, forming the structure shown in fig. 2, including:
forming a planarization layer PLN 53;
through holes are formed in the planarization layer PLN53 to expose the source electrodes of the first to fifth TFTs, the first to third metal layers. Those skilled in the art will appreciate that this step can be achieved by a single patterning process, thereby saving the number of mask lithographies. It will also be understood by those skilled in the art that the source and drain are technically only named differences and may be substituted for each other, one of which is called source and the other drain;
the anode 124 of the second green light emitting diode, the cathode 125 of the second green light emitting diode, and the first electrode 126 of the photodiode are simultaneously formed on the source electrode 117 of the fourth TFT, the third metal layer 123, and the source electrode 119 of the fifth TFT, respectively, through a one-time patterning process, wherein the anode 124, the cathode 125, and the first electrode 126 of the second green light emitting diode are transparent materials (e.g., ITO).
In the related art, in the manufacture of the display screen and the sensing unit 10 of the smart watch, two patterning processes are required to be performed when cathodes and anodes of a red light emitting diode, a green light emitting diode, and a blue light emitting diode in the display unit 20 are formed, two patterning processes are required to be performed when upper electrodes and lower electrodes of photodiodes are formed, and one patterning process is required to be performed when a reflective layer is formed. However, this step in this embodiment can form the anode and cathode of the green led and the first electrode of the photodiode in the sensing unit 10 in a single patterning process, which further optimizes the manufacturing process.
Step S3, forming a PIN layer 127 on the first electrode to form the structure shown in fig. 3;
step S4, forming the structure shown in fig. 4, including:
and simultaneously forming an anode 128 of the red light emitting diode, an anode 129 of the first green light emitting diode, a cathode 130 of the first green light emitting diode, an anode 131 of the blue light emitting diode, a cathode 132 of the blue light emitting diode and a second electrode 133 of the photodiode on the source 111 of the first TFT, the source 113 of the second TFT, the first metal layer 121, the source 115 of the third TFT, the second metal layer 122 and the PIN layer 127 by a one-time patterning process, wherein the anode 128 of the red light emitting diode, the anode 129 of the first green light emitting diode, the cathode 130 of the first green light emitting diode, the anode 131 of the blue light emitting diode, the cathode 132 of the blue light emitting diode and the second electrode 133 of the photodiode are opaque materials.
In the related art, in the manufacture of the display screen and the sensing unit 10 of the smart watch, two patterning processes are required to be performed when cathodes and anodes of a red light emitting diode, a green light emitting diode, and a blue light emitting diode in the display unit 20 are formed, two patterning processes are required to be performed when upper electrodes and lower electrodes of photodiodes are formed, and one patterning process is required to be performed when a reflective layer is formed. However, this step in this embodiment can form the second electrode of the photodiode in the sensing unit 10 and the anode of the red light emitting diode, the anode and the cathode of the green light emitting diode, and the anode and the cathode of the blue light emitting diode in the display unit 20 in a single patterning process, which further optimizes the manufacturing process.
Step S5, forming a pixel defining layer PDL54, forming the structure shown in fig. 5;
step S6, forming the structure shown in fig. 6, including:
vias are formed in the pixel definition layer PDL54 exposing the anode 128 of the red light emitting diode, the anode 129 of the first green light emitting diode, the cathode 130 of the first green light emitting diode, the anode 131 of the blue light emitting diode, the cathode 132 of the blue light emitting diode, the anode 124 of the second green light emitting diode, and the cathode 125 of the second green light emitting diode. Those skilled in the art will appreciate that this step can be achieved by a single patterning process, thereby saving the number of mask lithographies.
The red, green and blue light emitting layers 134, 135 and 136 are transferred to the exposed anode and cathode of the red light emitting diode, the exposed anode and cathode of the first green light emitting diode and the exposed anode and cathode of the second green light emitting diode, and the exposed anode and cathode of the blue light emitting diode, respectively, wherein the green light emitting layers are transferred to the anode and cathode of the first green light emitting diode and the green light emitting layers are transferred to the anode and cathode of the second green light emitting diode at the same time. Specifically, a red light emitting layer material array is formed on another substrate, a green light emitting layer material array is formed on another substrate, a blue light emitting layer material array is formed on another substrate, then the red light emitting layer materials are respectively transferred to corresponding anodes, the green light emitting layer materials are transferred to cathodes and anodes of the first green light emitting diode and the second green light emitting diode, the blue light emitting layer materials are transferred to cathodes and anodes of the blue light emitting diode, and three-time transfer is performed, wherein the anodes and the cathodes of the first green light emitting diode and the anodes and the cathodes of the second green light emitting diode are simultaneously exposed, so that the green light emitting layer materials are only transferred once, and the process is saved.
A passivation layer PVX55 is formed covering the light emitting layer.
Step S7, fabricating a cathode and a reflective layer of the red light emitting diode, including:
forming a via hole in the passivation layer PVX55 to expose the red light emitting layer 134;
forming a cathode 138 of a red light emitting diode on the red light emitting layer 134;
a reflective layer 139 is formed on the passivation layer PVX55 corresponding to the green emission layer 137 of the second green light emitting diode.
Optionally, the step S7 of forming the cathode 138 of the red light emitting diode on the red light emitting layer 134 and forming the reflective layer 139 on the passivation layer PVX55 corresponding to the green light emitting layer 137 of the second green light emitting diode further includes:
forming a cathode material of a red light emitting diode on the passivation layer PVX55 and the red light emitting layer 134;
forming a reflective layer on the cathode material;
and photoetching by using a half-tone mask, removing the reflecting layer on the cathode material of the red light-emitting diode, and reserving the cathode material of the red light-emitting diode so as to form the cathode of the red light-emitting diode.
In actual use, light emitted upward from the sensing unit 10 is reflected by the reflective layer thereon via the transparent electrode, enters the blood vessel on the wrist, and is received by the photodiode via reflection.
Specifically, the photolithography using the halftone mask includes:
forming a photoresist on the reflective layer;
photoetching by using a half-tone mask, wherein a completely opaque area of the half-tone mask is aligned to the position of a green light-emitting layer 137 of the second green light-emitting diode, and a semi-transparent area is aligned to the position of a red light-emitting layer 134;
performing a first etching to leave the cathode material, the reflective layer 139 and the photoresist thereon with a first thickness at a position corresponding to the green emitting layer 137 of the second green light emitting diode, and to leave the cathode material, the reflective layer and the photoresist thereon with a second thickness at a position corresponding to the red emitting layer 134, wherein the first thickness is greater than the second thickness;
ashing the remained photoresist to remove the photoresist with the second thickness until the reflective layer corresponding to the position of the red light-emitting layer 134 is exposed;
performing second etching to remove the reflecting layer corresponding to the position of the red light-emitting layer 134;
and removing the photoresist corresponding to the position of the green emitting layer 137 of the second green light emitting diode to form the manufactured semiconductor device with the structure shown in fig. 7.
In the related art, in the manufacture of the display screen and the sensing unit 10 of the smart watch, a layer of cathode made of a light-transmitting material needs to be separately prepared after the red light emitting diode of the front-mounted structure in the display unit 20 is transferred, and in order to reflect the green light emitted by the green light emitting diode in the sensing unit 10 to the wrist, a layer of reflective layer made of a light-impermeable material needs to be manufactured, so that two additional masking processes are needed to manufacture the cathode of the red light emitting diode in the display unit 20 and the reflective layer of the green light emitting diode in the sensing unit 10. However, with the above alternative of the present invention, the cathode of the red led in the display unit 20 and the reflective layer of the green led in the sensing unit 10 can be formed simultaneously in one process, thereby further optimizing the manufacturing process.
Another embodiment of the present invention provides a semiconductor device as shown in fig. 7, including
A transparent substrate;
a sensing unit 10 and a display unit 20 formed on the substrate, wherein the display unit 20 includes a red light emitting diode, a first green light emitting diode, and a blue light emitting diode, the sensing unit 10 includes a second green light emitting diode, and a photodiode configured to receive light from the second green light emitting diode,
wherein
The red light-emitting diode comprises a red light-emitting layer, an anode and a transparent cathode thereof;
the blue light emitting diode comprises a blue light emitting layer and an anode and a cathode thereof;
the first green light emitting diode and the second green light emitting diode respectively comprise a green light emitting layer and an anode and a cathode thereof.
The semiconductor device provided by this embodiment can integrate the red light emitting diode, the green light emitting diode, and the blue light emitting diode in the display unit 20 and the green light emitting diode and the photodiode in the sensing unit 10 in products such as wearable devices with a heart rate detection function on the same substrate, and has the advantages of simple manufacturing process, high manufacturing efficiency, low manufacturing cost, and capability of making products such as wearable devices lighter and thinner and having higher integration level.
In some alternative implementations of the present embodiment,
the green light emitting layers of the first green light emitting diode and the second green light emitting diode are arranged in the same layer and the same material.
By adopting the optional mode, the primary transfer printing step can be saved in the transfer printing process of the light-emitting diode, and the manufacturing process is further optimized.
In some alternative implementations of the present embodiment,
the sensing unit 10 further includes a reflective layer 139 disposed above the green emitting layer of the second green led for reflecting light emitted from the second green led in a direction away from the substrate.
In some alternative implementations of the present embodiment,
the sensing unit 10 further comprises a transparent electrode, disposed between the green emitting layer of the second green light emitting diode and the reflective layer,
the transparent electrode and the transparent cathode of the red light-emitting diode are arranged in the same layer and made of the same material.
By adopting the alternative mode, the reflecting layer of the green light emitting diode of the sensing unit 10 and the cathode of the red light emitting diode of the display unit 20 are formed by the same material in the same layer, so that one mask process can be reduced, and the production efficiency is improved.
In some alternative implementations of the present embodiment,
the anode 124 and the cathode 125 of the second green led are disposed on the same layer as the first electrode 126 of the photodiode, and are made of a transparent material. It should be noted that although fig. 7 shows that the anode 124 and the cathode 125 of the second green light emitting diode are not at the same height as the first electrode 126 of the photodiode, the same layer arrangement in the present invention means that the layers are formed in the same step in the process step, i.e., in the same step.
With this implementation, the anode and cathode of the green light emitting diode and the first electrode of the photodiode in the sensing unit 10 can be formed in one patterning process, further optimizing the manufacturing process.
In some alternative implementations of the present embodiment,
the second electrode 133 of the photodiode is disposed in the same layer as the anode 128 of the red light emitting diode, the anode 129 and the cathode 130 of the first green light emitting diode, and the anode 131 and the cathode 132 of the blue light emitting diode.
With this implementation, the second electrode of the photodiode in the sensing unit 10 and the anode of the red light emitting diode, the anode and cathode of the green light emitting diode, and the anode and cathode of the blue light emitting diode in the display unit 20 can be formed in one patterning process, further optimizing the manufacturing process.
Another embodiment of the present invention provides a wearable device including the semiconductor device described above. When the wearable device is a smart watch, if the substrate 100 is a rigid substrate such as glass, the blood vessel on the front side of the wrist corresponds to the sensing unit 10 when the heart rate detection is performed; if the substrate 100 is a flexible substrate, for example in the shape of a bracelet, the sensing unit 10 can be bent over to the back of the wrist, which provides a better heart rate detection accuracy due to the thicker blood vessels at the lower part of the wrist.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present invention. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
It is further noted that, in the description of the present invention, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations and modifications can be made on the basis of the above description, and all embodiments cannot be exhaustive, and all obvious variations and modifications belonging to the technical scheme of the present invention are within the protection scope of the present invention.
Claims (6)
1. A method for fabricating a semiconductor device includes
Forming a sensing unit and a display unit on a transparent substrate, wherein the display unit is formed to include a red light emitting diode, a first green light emitting diode, and a blue light emitting diode, the sensing unit is formed to include a second green light emitting diode, and a photodiode configured to receive light from the second green light emitting diode,
wherein
The red light emitting diode is formed to include a red light emitting layer and an anode and a transparent cathode thereof;
the blue light emitting diode is formed to include a blue light emitting layer and an anode and a cathode thereof;
the first green light emitting diode and the second green light emitting diode are formed to include a green light emitting layer and an anode and a cathode thereof, respectively;
forming a transistor structure layer on a substrate, including
Forming active regions and gates of the first to fifth transistors;
forming source electrodes, drain electrodes, data lines, and first, second, and third metal layers of the first to fifth transistors
Forming the sensing unit and the display unit on the transistor structure layer, including
Forming a planarization layer;
forming a through hole in the planarization layer to expose the source electrodes of the first to fifth transistors and the first to third metal layers;
simultaneously forming an anode of the second green light emitting diode, a cathode of the second green light emitting diode and a first electrode of the photodiode on a source electrode of a fourth transistor, a third metal layer and a source electrode of a fifth transistor respectively, wherein the anode, the cathode and the first electrode of the second green light emitting diode are made of transparent materials;
forming a sensing unit and a display unit on the transistor structure layer further comprises
Forming a PIN layer on the first electrode;
simultaneously forming an anode of the red light emitting diode, an anode of the first green light emitting diode, a cathode of the first green light emitting diode, an anode of the blue light emitting diode, a cathode of the blue light emitting diode and a second electrode of the photodiode on the source of the first transistor, the source of the second transistor, the first metal layer, the source of the third transistor, the second metal layer and the PIN layer respectively, wherein the anode of the red light emitting diode, the anode of the first green light emitting diode, the cathode of the first green light emitting diode, the anode of the blue light emitting diode, the cathode of the blue light emitting diode and the second electrode of the photodiode are made of opaque materials;
wherein forming a sensing unit and a display unit on the transistor structure layer further comprises:
forming a pixel defining layer;
forming a through hole in the pixel defining layer to expose the anode of the red light emitting diode, the anode of the first green light emitting diode, the cathode of the first green light emitting diode, the anode of the blue light emitting diode, the cathode of the blue light emitting diode, the anode of the second green light emitting diode and the cathode of the second green light emitting diode;
transferring a red light emitting layer, a green light emitting layer and a blue light emitting layer onto the exposed anode of the red light emitting diode, the exposed anode and cathode of the first green light emitting diode, the exposed anode and cathode of the second green light emitting diode and the exposed anode and cathode of the blue light emitting diode, respectively, wherein the transferring of the green light emitting layer onto the anode and cathode of the first green light emitting diode and the transferring of the green light emitting layer onto the anode and cathode of the second green light emitting diode are performed simultaneously;
forming a passivation layer covering the light emitting layer;
wherein forming a sensing unit and a display unit on the transistor structure layer further comprises:
forming a through hole in the passivation layer to expose the red light emitting layer;
forming a cathode of a red light emitting diode on the red light emitting layer;
forming a reflective layer on the passivation layer corresponding to the green light emitting layer of the second green light emitting diode;
wherein forming a cathode of the red light emitting diode on the red light emitting layer and forming a reflective layer on a passivation layer corresponding to the green light emitting layer of the second green light emitting diode comprises:
forming a cathode material of a red light emitting diode on the passivation layer and the red light emitting layer;
forming a reflective layer on the cathode material;
photoetching by using a half-tone mask, removing the reflecting layer on the cathode material of the red light-emitting diode, and reserving the cathode material of the red light-emitting diode so as to form the cathode of the red light-emitting diode;
wherein the performing photolithography using the halftone mask to remove the reflective layer on the cathode material of the red light emitting diode and retain the cathode material of the red light emitting diode to form the cathode of the red light emitting diode further comprises:
aligning the completely opaque region of the halftone mask to the green emitting layer of the second green emitting diode, and aligning the semi-transparent region to the red emitting layer;
carrying out first etching to leave a cathode material and a reflective layer at the corresponding positions of the green light-emitting layers of the second green light-emitting diodes and photoresist with a first thickness on the reflective layer, and leaving a cathode material and a reflective layer at the corresponding positions of the red light-emitting layers and photoresist with a second thickness on the reflective layer, wherein the first thickness is larger than the second thickness;
ashing the remained photoresist to remove the photoresist with the second thickness and expose the reflecting layer corresponding to the red light-emitting layer;
carrying out second etching to remove the reflecting layer corresponding to the red light-emitting layer;
and removing the corresponding photoresist at the green light emitting layer of the second green light emitting diode.
2. A semiconductor device formed by the method of claim 1, comprising
A transparent substrate;
a sensing unit and a display unit formed on the substrate, wherein the display unit includes a red light emitting diode, a first green light emitting diode, and a blue light emitting diode, the sensing unit includes a second green light emitting diode, and a photodiode configured to receive light from the second green light emitting diode,
wherein
The red light-emitting diode comprises a red light-emitting layer, an anode and a transparent cathode thereof;
the blue light emitting diode comprises a blue light emitting layer and an anode and a cathode thereof;
the first green light emitting diode and the second green light emitting diode respectively comprise a green light emitting layer and an anode and a cathode thereof;
the anode and the cathode of the second green light-emitting diode and the first electrode of the photodiode are arranged on the same layer, and the material is a transparent material;
the second electrode of the photodiode is arranged in the same layer with the anode of the red light-emitting diode, the anode and the cathode of the first green light-emitting diode and the anode and the cathode of the blue light-emitting diode.
3. The semiconductor device according to claim 2, wherein the green light emitting layers of the first green light emitting diode and the second green light emitting diode are provided in the same layer of the same material.
4. The semiconductor device according to claim 2,
the sensing unit further comprises a reflecting layer arranged above the green light emitting layer of the second green light emitting diode and used for reflecting light emitted by the second green light emitting diode towards the direction far away from the substrate.
5. The semiconductor device according to claim 4,
the sensing unit further includes a transparent electrode disposed between the green emitting layer of the second green light emitting diode and the reflective layer,
the transparent electrode and the transparent cathode of the red light-emitting diode are arranged in the same layer and made of the same material.
6. A wearable device comprising the semiconductor device of any one of claims 2-5.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009067A (en) * | 2014-06-16 | 2014-08-27 | 信利（惠州）智能显示有限公司 | Organic light-emitting diode display device with touch control function and manufacturing method thereof |
| CN107770309A (en) * | 2017-10-18 | 2018-03-06 | 苏州大学 | Application of the near-infrared luminous pixel in OLED screen curtain mobile terminal structure |
| CN109309117A (en) * | 2018-09-29 | 2019-02-05 | 京东方科技集团股份有限公司 | Sensing heart rate display device and intelligent wearable device |
| CN110313919A (en) * | 2018-03-30 | 2019-10-11 | 三星电子株式会社 | Electronic equipment and method for controlling it |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0406540D0 (en) * | 2004-03-24 | 2004-04-28 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
| TWI466266B (en) * | 2009-02-24 | 2014-12-21 | Epistar Corp | An array-type light-emitting device and apparatus thereof |
-
2019
- 2019-03-28 CN CN201910241613.7A patent/CN109860220B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009067A (en) * | 2014-06-16 | 2014-08-27 | 信利（惠州）智能显示有限公司 | Organic light-emitting diode display device with touch control function and manufacturing method thereof |
| CN107770309A (en) * | 2017-10-18 | 2018-03-06 | 苏州大学 | Application of the near-infrared luminous pixel in OLED screen curtain mobile terminal structure |
| CN110313919A (en) * | 2018-03-30 | 2019-10-11 | 三星电子株式会社 | Electronic equipment and method for controlling it |
| CN109309117A (en) * | 2018-09-29 | 2019-02-05 | 京东方科技集团股份有限公司 | Sensing heart rate display device and intelligent wearable device |
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