CN109860023A - Gallium nitride transistor and its manufacturing method - Google Patents
Gallium nitride transistor and its manufacturing method Download PDFInfo
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- CN109860023A CN109860023A CN201811644313.5A CN201811644313A CN109860023A CN 109860023 A CN109860023 A CN 109860023A CN 201811644313 A CN201811644313 A CN 201811644313A CN 109860023 A CN109860023 A CN 109860023A
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Abstract
This application discloses gallium nitride transistor and its manufacturing methods.This method comprises: providing substrate；Nucleating layer is formed over the substrate；And epitaxial layer is formed on the nucleating layer, the epitaxial layer is used to form transistor, wherein the epitaxial layer is III-V compound layer, the nucleating layer is formed by argon ion sputtering high temperature gas-phase deposition, and includes the first element identical with the epitaxial layer.The gallium nitride transistor uses reliability and yield comprising improving transistor with the nucleating layer of epitaxial layer respective element.
Description
Technical field
This disclosure relates to semiconductor field, more particularly, to a kind of gallium nitride transistor and its manufacturing method.
Background technique
As the Typical Representative of third generation semiconductor material, before gallium nitride (GaN) has a wide range of applications field and development
Scape, due to lacking natural GaN substrate (homo-substrate of GaN epitaxy) material in nature, the researcher in each field is logical
Often selection grows GaN epitaxial layer in foreign substrate such as Sapphire Substrate, silicon carbide (SiC) substrate or silicon (Si) substrate and forms half
Conductor luminescent device, switching device and senser element etc..The characteristic of various foreign substrate materials and its between GaN epitaxial layer
Lattice Matching and matched study of thermal stress become the commercialization of realization GaN semiconductor photoelectric device and development and sustainable development
It is crucial.
Sapphire Substrate production technology relative maturity, chemical stability be good, high mechanical strength, becomes initial stage semiconductor optoelectronic
The preferred substrate material of device, the pattern technology of Sapphire Substrate are alleviated to a certain extent outside Sapphire Substrate and GaN
Prolong the problem of Lattice Matching and thermal stress match between material, but because of lattice mismatch between Sapphire Substrate and GaN epitaxy material
With still remained the problem of epitaxial wafer warpage caused by thermal stress mismatch, and extension chip size is bigger, and warpage issues are more prominent.
Silicon substrate and silicon carbide substrates are good conductors electrically and thermally, can be developed to large scale, automation direction, it is considered to be
Most there is the substrate of development potentiality in future.But there is also biggish crystalline substances between silicon substrate and silicon carbide substrates and GaN epitaxial layer
Lattice mismatch and thermal stress mismatch, and surface of silicon is also easy to occur to aoxidize to form amorphous oxide layer, is not easy to form height
The GaN epitaxial layer of crystal quality.Moreover, silicon substrate is in the Metallo-Organic Chemical Vapor deposition for growing GaN epitaxial layer
It, can be by MOCVD chamber when forming epitaxial layer in (Metal-organic Chemical Vapor Deposition, MOCVD) cavity
The influence of the compound melt back of remaining gallium or gallium in body, the serious performance and yield for reducing GaN device.
Summary of the invention
In view of this, present disclose provides a kind of gallium nitride transistor and its manufacturing methods, wherein using comprising with extension
The nucleating layer of layer respective element improves the reliability and yield of transistor.
One side according to an embodiment of the present invention provides a kind of manufacturing method of gallium nitride transistor, comprising: provides lining
Bottom；Nucleating layer is formed over the substrate；And epitaxial layer is formed on the nucleating layer, the epitaxial layer is used to form crystal
Pipe, wherein the epitaxial layer is III-V compound layer, and the nucleating layer passes through argon ion sputtering high temperature gas-phase deposition
It is formed, and includes the first element identical with the epitaxial layer.
Preferably, the epitaxial layer is by Al(1-x)GaxN、In(1-y)GayN and In(1-y)Al(1-x)Ga(x+y)At least one of N
Composition, wherein x and y is all larger than zero and is less than or equal to 1.
Preferably, the nucleating layer includes second element identical with the substrate.
Preferably, the substrate is Sapphire Substrate.
Preferably, the nucleating layer by the nitride of aluminium, the nitrogen oxides of aluminium, the nitrogen oxides of indium, indium aluminium nitride,
At least one of nitrogen oxides of indium aluminium composition.
It preferably, further include forming contact layer over the substrate before the step of forming nucleating layer, the contact
Layer contacts between the substrate and the nucleating layer and with the two, wherein the contact layer includes identical as the substrate
Second element, and third element identical with the nucleating layer.
Preferably, the substrate is silicon substrate or silicon carbide substrates.
Preferably, the contact layer is by least two groups in the nitrogen oxides of the oxide of silicon, the nitride of silicon or silicon
At.
Preferably, the nucleating layer is by the oxide of aluminium, the nitride of aluminium, the nitrogen oxides of aluminium, the oxide of indium, indium
At least one of nitride, the nitrogen oxides of indium, the oxide of indium aluminium, the nitride of indium aluminium, nitrogen oxides of indium aluminium form.
Preferably, the material of the contact layer includes the oxide of silicon, and the nucleating layer is by the oxide of aluminium, the nitrogen oxygen of aluminium
At least one of compound, the oxide of indium, the nitrogen oxides of indium, the oxide of indium aluminium, nitrogen oxides of indium aluminium form.
Preferably, the contact layer is made of silica, and the nucleating layer is by aluminum oxynitride or aluminum oxynitride and aluminium nitride
At least one of mixture composition.
Preferably, the material of the contact layer includes the nitride of silicon,
The nucleating layer by the nitride of aluminium, the nitrogen oxides of aluminium, the nitride of indium, the nitrogen oxides of indium, indium aluminium nitrogen
At least one of compound, nitrogen oxides of indium aluminium form.
Preferably, the material of the contact layer includes the nitrogen oxides of silicon, and the nucleating layer is by the oxide of aluminium, the nitrogen of aluminium
The nitridation of compound, the nitrogen oxides of aluminium, the oxide of indium, the nitride of indium, the nitrogen oxides of indium, the oxide of indium aluminium, indium aluminium
At least one of object, nitrogen oxides of indium aluminium form.
Preferably, the contact layer with a thickness of 1 nanometer to 5 nanometers.
Preferably, the nucleating layer with a thickness of 10 nanometers to 100 nanometers.
Preferably, in the argon ion sputtering high temperature gas-phase deposition, by controlling the sputter gas and described
Element species and ratio in nucleation layer material described in the flow and proportion adjustment of process gas, by controlling the sputtering power
And the process time adjusts the thickness of the nucleating layer.
Preferably, in the argon ion sputtering high temperature gas-phase deposition, using 1000 watts to 5000 watts splash
It penetrates power and forms the nucleating layer.
Preferably, in the argon ion sputtering high temperature gas-phase deposition, use flow per minute for 30 standard milliliters
The sputter gas per minute to 300 standard milliliters generates argon ion, and the sputter gas includes argon gas.
Preferably, it in the argon ion sputtering high temperature gas-phase deposition, is generated using argon ion bombardment metal targets
Metal ion, the metal ion are reacted with process gas, form the nucleating layer.
Preferably, in the argon ion sputtering high temperature gas-phase deposition, the process gas includes nitrogen and/or oxygen
Gas, the flow of nitrogen are that 30 standard milliliters are per minute to 300 standard milliliters per minute, and the flow of oxygen is 1 every point of standard milliliters
Clock is per minute to 10 standard milliliters.
Preferably, in the argon ion sputtering high temperature gas-phase deposition, the range of technological temperature includes 600 to 700
Degree Celsius.
Preferably, the epitaxial layer is at least one in the buffer layer, channel layer and barrier layer of the gallium nitride transistor
Kind.
According to another aspect of an embodiment of the present invention, a kind of gallium nitride transistor is provided, comprising: substrate；Nucleating layer, position
In on the substrate；And epitaxial layer, it is located on the nucleating layer, the epitaxial layer is used to form transistor, wherein described outer
Prolonging layer is III-V compound layer, and the nucleating layer formed by argon ion sputtering high temperature gas-phase deposition, and include and
Identical first element of the epitaxial layer.
Preferably, the epitaxial layer is by Al(1-x)GaxN、In(1-y)GayN and In(1-y)Al(1-x)Ga(x+y)At least one of N
Composition, wherein x and y is all larger than zero and is less than or equal to 1.
Preferably, the nucleating layer includes second element identical with the substrate.
Preferably, the substrate is Sapphire Substrate.
Preferably, the nucleating layer by the nitride of aluminium, the nitrogen oxides of aluminium, the nitrogen oxides of indium, indium aluminium nitride,
At least one of nitrogen oxides of indium aluminium composition.
It preferably, further include contact layer, the contact layer connects between the substrate and the nucleating layer and with the two
Touching, wherein the contact layer includes second element identical with the substrate, and third identical with nucleating layer member
Element.
Preferably, the substrate is silicon substrate or silicon carbide substrates.
Preferably, the contact layer is by least two groups in the nitrogen oxides of the oxide of silicon, the nitride of silicon or silicon
At.
Preferably, the nucleating layer is by the oxide of aluminium, the nitride of aluminium, the nitrogen oxides of aluminium, the oxide of indium, indium
At least one of nitride, the nitrogen oxides of indium, the oxide of indium aluminium, the nitride of indium aluminium, nitrogen oxides of indium aluminium form.
Preferably, the material of the contact layer includes the oxide of silicon, and the nucleating layer is by the oxide of aluminium, the nitrogen oxygen of aluminium
At least one of compound, the oxide of indium, the nitrogen oxides of indium, the oxide of indium aluminium, nitrogen oxides of indium aluminium form.
Preferably, the contact layer is made of silica, and the nucleating layer is by aluminum oxynitride or aluminum oxynitride and aluminium nitride
At least one of mixture composition.
Preferably, the material of the contact layer includes the nitride of silicon, and the nucleating layer is by the nitride of aluminium, the nitrogen oxygen of aluminium
At least one of compound, the nitride of indium, the nitrogen oxides of indium, the nitride of indium aluminium, nitrogen oxides of indium aluminium form.
Preferably, the material of the contact layer includes the nitrogen oxides of silicon, and the nucleating layer is by the oxide of aluminium, the nitrogen of aluminium
The nitridation of compound, the nitrogen oxides of aluminium, the oxide of indium, the nitride of indium, the nitrogen oxides of indium, the oxide of indium aluminium, indium aluminium
At least one of object, nitrogen oxides of indium aluminium form.
Preferably, the contact layer with a thickness of 1 nanometer to 5 nanometers.
Preferably, the nucleating layer with a thickness of 10 nanometers to 100 nanometers.
Preferably, the epitaxial layer is at least one in the buffer layer, channel layer and barrier layer of the gallium nitride transistor
Kind.
The gallium nitride transistor provided according to embodiments of the present invention, by argon ion sputtering high temperature gas-phase deposition,
It is formed between substrate and epitaxial layer comprising the nucleating layer with epitaxial layer respective element, to reduce between substrate and epitaxial layer directly
Contact and the lattice mismatch that generates and the problem of thermal stress mismatch.In a preferred embodiment, which further includes being located at
Contact layer between substrate and nucleating layer, the contact layer include element corresponding with substrate, and corresponding with nucleating layer first
Element, thus be further reduced directly contacted between substrate and epitaxial layer and generate lattice mismatch and thermal stress mismatch the problem of.
The manufacturing method of the gallium nitride transistor provided according to embodiments of the present invention passes through argon before forming epitaxial layer
Ion sputtering high temperature gas-phase deposition forms nucleating layer.The nucleating layer protects substrate surface in the next steps, so as to
Reduce substrate surface be easy to aoxidize and in Metal Organic Chemical Vapor Deposition melt back group-III element or III-V
The problem of epitaxial layer crystal quality declines caused by compounds of group (for example, gallium nitride) and substrate surface react.
Compared with prior art, the embodiment of the present invention forms nucleating layer using argon ion sputtering high temperature gas-phase deposition,
Instead of the method for forming nucleating layer with MOCVD technique of the prior art, due to benefit argon ion sputtering high temperature of the embodiment of the present invention
Gas-phase deposition is to become argon plasma under the action of radio frequency using argon gas, and argon plasma bombards target, quilt
It shoots down the target material got off and falls on substrate or formed on contact layer nucleating layer, during forming nucleating layer, it is also necessary to
It is added on the basis of argon ion sputtering and is chemically reacted for reacting the process gas such as oxygen, nitrogen and target material, from
And nucleating layer finally is formed on substrate or contact layer, therefore, the method that the embodiment of the present invention forms nucleating layer is physical reactions
And the combination of chemical reaction, and combined just because of physical reactions with chemical reaction, so that the embodiment of the present invention is formed
Nucleating layer is finer and close compared with the prior art.This is because only physical method or only chemical method cannot all reach this
Effect, such as argon ion bombardment target is directly used using only physical method is the material that bombards in the brilliant accumulation on the upper side of target
At film, the material of this film and the material of target be it is identical, cannot pass through chemical reaction and change, for another example only
Nucleating layer, such as AlN are formed by MOCVD technique using chemical method, reactant is TMAl and ammonia, although this technique energy
Aluminium nitride, but only chemical process are formed, nucleating layer compactness is relatively low, meanwhile, compared with sputtering equipment, MOCVD device is opposite
It is more expensive, higher cost.
In addition, the embodiment of the present invention is passed through suitable oxygen in argon ion sputtering high temperature gas-phase deposition, improve
The viscous stickiness of nucleating layer and substrate, and hydrogen has been passed through in MOCVD process equipment, to prevent MOCVD process equipment from exploding, no
It can be passed through oxygen again, so that the viscous stickiness of nucleating layer and substrate can not be improved.Therefore, epitaxial structure provided in an embodiment of the present invention
And its manufacturing method uses reliability and yield comprising improving transistor with the nucleating layer of epitaxial layer respective element, also reduces
Cost.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the embodiment of the present disclosure, simple be situated between will be made to the attached drawing of embodiment below
It continues, it should be apparent that, the attached drawing in description below only relates to some embodiments of the present disclosure, rather than the limitation to the disclosure.
Fig. 1 shows the sectional view of the epitaxial structure according to first embodiment of the present disclosure gallium nitride transistor.
Fig. 2 shows the sectional views according to the epitaxial structure of second embodiment of the present disclosure gallium nitride transistor.
Fig. 3 and Fig. 4 respectively illustrates the structural schematic diagram of the different type substrate used in epitaxial structure.
Fig. 5 shows the flow chart of the manufacturing method of the epitaxial structure of Fig. 1.
Fig. 6 shows the flow chart of the manufacturing method of the epitaxial structure of Fig. 2.
Specific embodiment
To keep the above objects, features, and advantages of the disclosure more obvious and easy to understand, with reference to the accompanying drawing to the disclosure
Specific embodiment be described in detail.Elaborate in the de-scription many details in order to fully understand the disclosure, but
It is that the disclosure can also be implemented using other than the one described here other way, those skilled in the art can not disobey
Similar popularization is done in the case where back disclosure intension, therefore the disclosure is not limited by the specific embodiments disclosed below.Secondly,
Disclosure combination schematic diagram is described in detail, when the embodiment of the present disclosure is described in detail, for purposes of illustration only, indicating cuing open for device architecture
Face figure can disobey general proportion and make partial enlargement, and the schematic diagram is example, should not limit disclosure protection herein
Range.In addition, the three-dimensional space of length, width and depth should be included in actually manufacture.
Fig. 1 shows the sectional view of the epitaxial structure according to first embodiment of the present disclosure gallium nitride transistor.
The epitaxial structure of the present embodiment include substrate 101, the nucleating layer 110 on substrate 101 and be located at nucleating layer
Epitaxial layer 120 on 110.
In the present embodiment, substrate 101 is Sapphire Substrate, wherein Sapphire Substrate includes aluminium element and oxygen element, indigo plant
The molecule of jewel is for Al2O3。
In the present embodiment, nucleating layer 110 is formed by argon ion sputtering high temperature gas-phase deposition, and include with outside
Prolong identical first element of layer 120, while also including second element identical with substrate 101.
In some preferred embodiments, nucleating layer 110 by the nitride of aluminium, the nitrogen oxides of aluminium, indium nitrogen oxides, indium
At least one of the nitrogen oxides composition of the nitride of aluminium, indium aluminium.
In some specific embodiments, the second element identical with substrate 101 of nucleating layer 110 can be divided into 3 classes, respectively
For oxygen element O, aluminium element Al and oxygen element O and aluminium element Al.
More specifically, second element is aluminium member when the nitride of nitride of the nucleating layer 110 comprising aluminium and/or indium aluminium
Plain Al；When nucleating layer 110 include aluminium nitrogen oxides and/or indium aluminium nitrogen oxides when, second element be aluminium element Al or
Oxygen element O or aluminium element Al and oxygen element O includes simultaneously；When nucleating layer 110 includes the nitrogen oxides of indium, second element
For oxygen element O.
In the present embodiment, the thickness range of nucleating layer 110 includes 10 nanometers to 100 nanometers, selects this thickness range
The reason is as follows that.
Firstly, nucleating layer 110 include element identical with substrate 101, be for the crystal structure with substrate 101 preferably
Matching, still, in the initial stage that 110 film of nucleating layer is formed, film quality is bad, can not be with the crystal knot of substrate 101
Structure matches well, needs the transition by about 10 nano thickness, and film quality steps up, at this point, nucleating layer 110 and lining
The crystal structure at bottom 101 matches in which just can be very good, therefore 110 thickness of nucleating layer is preferably not less than 10 nanometers.
Secondly, needing to consume a large amount of time forming nucleating layer 110, when the thicknesses of layers of nucleating layer 110 is more than 100 to receive
Meter Shi not only increases time cost, and has no bigger benefit for matching with the crystal structure of substrate 101, therefore is nucleated
110 thickness of layer are desirably no more than 100 nanometers.
In some preferred embodiments, the thickness range of nucleating layer 110 includes 38 nanometers to 100 nanometers, selects this thickness
The reason of spending range is as follows.
Since the gallium nitride transistor of the present embodiment can be used for making LED, since luminous energy passes through the film layer of nucleating layer 110
When, can be reflected or be absorbed by the film layer of nucleating layer 110, and reflect, the wavelength of degree (light emission luminance of LED) and light that absorbs is deposited
In periodic relationship, in order to improve the light emission luminance of LED, under normal circumstances, the thicknesses of layers of nucleating layer 110 is typically chosen 1/4
The integral multiple of wavelength, but since light reflects in the film layer of nucleating layer 110, the thicknesses of layers selection of nucleating layer 110
The integral multiple of 1/8 wavelength.Substantially 300 nanometers to 800 nanometers of the range of visible light, so the thickness of the film layer of nucleating layer 110
Range selects 38 nanometers to 100 nanometers.
In the present embodiment, epitaxial layer 120 is III-V compound layer, by Al(1-x)GaxN、In(1-y)GayN and In(1-y)
Al(1-x)Ga(x+y)At least one of N composition, wherein x and y is all larger than zero and is less than or equal to 1.
First element includes nitrogen N and/or phosphide element In, and in some specific embodiments, epitaxial layer 120 is mainly wrapped
Include Al(1-x)GaxN, nucleating layer 110 mainly include aluminium nitride and/or aluminum oxynitride.
In the present embodiment, epitaxial layer 120 is used to form transistor, and epitaxial layer 120 may include gallium nitride transistor
At least one of buffer layer, channel layer and barrier layer, in some preferred embodiments, epitaxial layer 120 can also include insertion
Layer.
Fig. 2 shows the sectional views according to the epitaxial structure of second embodiment of the present disclosure gallium nitride transistor.
The epitaxial structure of the present embodiment includes substrate 101, the nucleating layer 112 on substrate 101, is located at nucleating layer 112
On epitaxial layer 120, and the contact layer 111 contacted between substrate 101 and nucleating layer 112 and with the two.
In the present embodiment, substrate 101 is silicon substrate or silicon carbide substrates.
In the present embodiment, contact layer 111 is formed by argon ion sputtering high temperature gas-phase deposition, and is included and served as a contrast
The identical second element in bottom 101, while also including third element identical with nucleating layer 112.Contact layer 111 is received with a thickness of 1
Rice is to 5 nanometers.
In some preferred embodiments, in nitrogen oxides of the contact layer 111 by the oxide of silicon, the nitride of silicon or silicon
At least one composition.
In some specific embodiments, the second element identical with substrate 101 of contact layer 111 can be divided into 3 classes, respectively
For oxygen element O, element silicon Si and oxygen element O and element silicon Si.
More specifically, second element is oxygen member when the nitrogen oxides of oxide of the contact layer 111 comprising silicon and/or silicon
Plain O or element silicon Si or oxygen element O and element silicon Si include simultaneously；When contact layer 111 includes the nitride of silicon, the
Was Used is element silicon Si.
In the present embodiment, nucleating layer 112 is formed by argon ion sputtering high temperature gas-phase deposition, and include with outside
Prolong identical first element of layer 120, while also including second element identical with contact layer 111.
In some specific embodiments, when contact layer 111 is by the nitrogen oxides of the oxide of silicon, the nitride of silicon or silicon
In at least two compositions or contact layer 111 material include silicon nitrogen oxides.So, nucleating layer 112 by aluminium oxidation
Object, the nitride of aluminium, the nitrogen oxides of aluminium, the oxide of indium, the nitride of indium, the nitrogen oxides of indium, the oxide of indium aluminium, indium
At least one of the nitrogen oxides composition of the nitride of aluminium, indium aluminium.
In other specific embodiments, the material of contact layer 111 includes the oxide of silicon, and nucleating layer 112 is by aluminium
Oxide, the nitrogen oxides of aluminium, the oxide of indium, the nitrogen oxides of indium, the oxide of indium aluminium, indium aluminium nitrogen oxides in extremely
A kind of few composition.It is furthermore preferred that contact layer 111 is made of silica, nucleating layer 112 is by aluminum oxynitride or aluminum oxynitride and nitridation
At least one of aluminium mixture composition.
In other specific embodiments, the material of contact layer 111 includes the nitride of silicon, and nucleating layer 112 is by aluminium
Nitride, the nitrogen oxides of aluminium, the nitride of indium, the nitrogen oxides of indium, the nitride of indium aluminium, indium aluminium nitrogen oxides in extremely
A kind of few composition.
In the present embodiment, the thickness range of nucleating layer 112 includes 10 nanometers to 100 nanometers, and more preferably 38 nanometers extremely
100 nanometers, reason is essentially identical with first embodiment, and details are not described herein again.
In the present embodiment, epitaxial layer 120 is III-V compound layer, by Al(1-x)GaxN、In(1-y)GayN and In(1-y)
Al(1-x)Ga(x+y)At least one of N composition, wherein x and y is all larger than zero and is less than or equal to 1.
First element includes nitrogen N and/or phosphide element In, and in some specific embodiments, epitaxial layer 120 is mainly wrapped
Include Al(1-x)GaxN, nucleating layer 112 mainly include aluminium nitride and/or aluminum oxynitride.
In the present embodiment, epitaxial layer 120 is used to form gallium nitride transistor, and epitaxial layer 120 may include gallium nitride crystalline substance
At least one of buffer layer, channel layer and barrier layer of body pipe, in some preferred embodiments, epitaxial layer 120 can be also with packets
Include insert layer.
Fig. 3 and Fig. 4 respectively illustrates the structural schematic diagram of the different type substrate used in epitaxial structure.
As shown in figure 3, the type of substrate 101 used in the epitaxial structure of first and second embodiment of the disclosure is flat
Substrate.In some preferred embodiments, patterned substrate 201 as shown in Figure 4 also can be used.
Fig. 5 shows the flow chart of the manufacturing method of the epitaxial structure of Fig. 1, below in conjunction with Fig. 1 and Fig. 5 to the present embodiment
It is specifically described.
In step S101, substrate is provided.Following description is by taking fFlat substrate 101 as shown in Figure 3 as an example, in the present embodiment
In, substrate 101 is Sapphire Substrate.
In step S102, nucleating layer is grown on substrate.As shown in Figure 1, substrate 101 is cleaned up be put into be used for argon from
In the equipment cavity of son sputtering high temperature gas-phase deposition.Select at least one in aluminium target, indium target or aluminium indium alloy target
Kind is used as technique target, selects argon gas as sputter gas, selects at least one of nitrogen or oxygen as process gas, will
Temperature rises between 500 to 1000 degrees Celsius, passes through sputter gas used in control argon ion sputtering high temperature gas-phase deposition
The predetermined kind and ratio that element contained by the material of control nucleating layer 110 is realized with the flow and ratio of process gas, pass through control
What sputtering power processed and process time realized nucleating layer 110 reaches predetermined thickness, wherein nucleating layer 110 is both comprising at least one
First element identical with epitaxial layer 120, also comprising at least one second element identical with substrate 101.
In the present embodiment, the material of nucleating layer 110 is nitrogen oxides, the indium of the nitride of aluminium, the nitrogen oxides of aluminium, indium
At least one of the nitride of aluminium, nitrogen oxides of indium aluminium.In some preferred embodiments, the material of nucleating layer 110 is nitrogen
Change at least one of aluminium or aluminum oxynitride.Select aluminium target as used in argon ion sputtering high temperature gas-phase deposition
The parameter of target, technique specifically includes: technological temperature is 600 to 700 degrees Celsius, the flow of sputter gas argon gas is 30 standards milli
Liter Per Minute to 300 standard milliliters per minute, the flow of process gas nitrogen be 30 standard milliliters per minute to 300 standard milliliters
Per minute, the flow of process gas oxygen be 1 standard milliliters per minute to 10 standard milliliters per minute, sputtering power be 1000 watts
Spy is to 5000 watts.In argon ion sputtering high temperature gas-phase deposition, when sputtering power is between 1000 to 5000 watts, stream
Amount will become argon ion in 30 to 300 standard milliliters/argon gas between minute, under the bombardment effect of argon ion, in aluminium target
Aluminium can be escaped in the form of aluminum ions, temperature be 600 to 700 degrees Celsius between high temperature action under, the aluminium ion of evolution
Meeting and flow react to form aluminium nitride and be deposited on 110 table of substrate in 30 to 300 standard milliliters/technique nitrogen between minute
Face is passed through flow in the technical oxygen of 1 to 10 standard milliliters/between minute, facilitates the combination of aluminium nitride and substrate 100, with
Increasing for technical oxygen, partial nitridation aluminium can also form aluminum oxynitride, in the present embodiment, by control the process time 30
To between 300 seconds, thickness nucleating layer 110 between 10 to 100 nanometers are ultimately formed.
In this step, the material of nucleating layer 110 selects as shown in Figure 1, details are not described herein again.
In step S103, in nucleating layer growing epitaxial layers.In the present embodiment, by MOCVD technique in nucleating layer 110
Growing epitaxial layers 120, wherein epitaxial layer 120 is III-V compound layer, by Al(1-x)GaxN、In(1-y)GayN and In(1-y)
Al(1-x)Ga(x+y)At least one of N composition, wherein x and y is all larger than zero and is less than or equal to 1.Epitaxial layer 120 is used to form crystalline substance
Body pipe.In some preferred embodiments, transistor can be gallium nitride transistor, and epitaxial layer 120 includes gallium nitride transistor
At least one of buffer layer, channel layer and barrier layer, in other preferred embodiments, epitaxial layer 120 further includes insert layer.
In this step, the material of epitaxial layer 120 selects as shown in Figure 1, details are not described herein again.
Fig. 6 shows the flow chart of the manufacturing method of the epitaxial structure of Fig. 2, below in conjunction with Fig. 2 and Fig. 6 to the present embodiment
It is specifically described.
In step S201, substrate is provided.Following description is by taking fFlat substrate 101 as shown in Figure 3 as an example, in the present embodiment
In, substrate 101 is silicon substrate or silicon carbide substrates.
In step S202, contact layer 111 is grown on substrate.It is used for as shown in Fig. 2, substrate 101 is cleaned up to be put into
In the equipment cavity of argon ion sputtering high temperature gas-phase deposition.It selects in aluminium target, indium target or aluminium indium alloy target extremely
It is few a kind of as technique target, it selects argon gas as sputter gas, selects at least one of nitrogen or oxygen as process gas
Body rises to temperature between 500 to 1000 degrees Celsius, passes through sputtering used in control argon ion sputtering high temperature gas-phase deposition
The flow and ratio of gas and process gas realize the predetermined kind and ratio of element contained by the material of control contact layer 111, lead to
It crosses control sputtering power and the process time realizes that make contact layer 111 reaches predetermined thickness, wherein contact layer 111 is both comprising extremely
A kind of few third element identical with nucleating layer 112 further includes containing at least one second element identical with substrate 101.
In this step, the material of contact layer 111 selects as shown in Fig. 2, details are not described herein again.
In the present embodiment, contact layer 111 is by least one in the nitrogen oxides of the oxide of silicon, the nitride of silicon or silicon
Kind composition.In other preferred embodiments, contact layer is made of silica.Select aluminium target as argon ion sputtering High Temperature Gas
The parameter of target used in phase depositing operation, technique specifically includes: technological temperature is 600 to 700 degrees Celsius, sputter gas
The flow of argon gas be 30 standard milliliters per minute to 300 standard milliliters per minute, the flow of process gas nitrogen be 30 standards milli
Liter Per Minute to 300 standard milliliters per minute, the flow of process gas oxygen be that 1 standard milliliters are every to 10 standard milliliters per minute
Minute, sputtering power are 1000 watts to 5000 watts.In argon ion sputtering high temperature gas-phase deposition, process gas oxygen
Flow be 1 standard milliliters it is per minute to 10 standard milliliters per minute when, can be sent out under high temperature environment with the silicon materials of substrate 101
Raw reaction, forms a thin layer silica, and the thickness of silica is related with technological temperature and reaction time, and temperature is higher, when reacting
Between it is longer, the film layer of silica is thicker, and introducing flow is 30 standard milliliters technique nitrogen per minute to 300 standard milliliters per minute
The synthesis speed that gas can not only reduce silicon oxide film can also form silicon nitride or silicon oxynitride with the silicon materials of substrate 101；It splashes
When to penetrate power be between 1000 to 5000 watts, silica, silicon nitride, silicon oxynitride film can be influenced simultaneously to a certain extent
Synthesis speed；Therefore contact layer 111 is by least one of the nitrogen oxides of the oxide of silicon, the nitride of silicon or silicon group
At.In the present embodiment, thickness was ultimately formed between 1 to 5 nanometer between 30 to 300 seconds by the control process time
Contact layer 111.
In step S203, nucleating layer is grown on the contact layer.Wherein, nucleating layer 112 includes identical with epitaxial layer 120 the
One element.Nucleating layer 112 with a thickness of 10 nanometers to 100 nanometers.In some preferred embodiments, nucleating layer 112 by aluminium oxygen
Compound, the nitride of aluminium, the nitrogen oxides of aluminium, the oxide of indium, the nitride of indium, the nitrogen oxides of indium, indium aluminium oxide,
At least one of the nitrogen oxides composition of the nitride of indium aluminium, indium aluminium.In other preferred embodiments, nucleating layer 112 by
At least one of aluminum oxynitride or aluminum oxynitride and nitridation aluminium mixture composition.
In this step, the material of nucleating layer 112 selects as shown in Fig. 2, details are not described herein again.
Continue to carry out argon ion sputtering high temperature gas-phase deposition, sputtering power 1000 in the container in step S202
When between to 5000 watts, flow will become argon ion in 30 to 300 standard milliliters/argon gas between minute, in argon ion
Under bombardment effect, the aluminium in aluminium target can be escaped in the form of aluminum ions, be the high temperature between 600 to 700 degrees Celsius in temperature
Under effect, the aluminium ion meeting of evolution and flow react to form nitrogen in 30 to 300 standard milliliters/technique nitrogen between minute
Change al deposition on 111 surface of contact layer, is passed through flow in the technical oxygen of 1 to 10 standard milliliters/between minute, helps to nitrogenize
The combination of aluminium and contact layer 111, with increasing for technical oxygen, partial nitridation aluminium can also form aluminum oxynitride, in the present embodiment
In, through the control process time between 30 to 300 seconds, ultimately form thickness nucleating layer 112 between 10 to 100 nanometers.
In step S204, in nucleating layer growing epitaxial layers.In the present embodiment, by MOCVD technique in nucleating layer 112
Growing epitaxial layers 120, wherein epitaxial layer 120 is III-V compound layer, by Al(1-x)GaxN、In(1-y)GayN and In(1-y)
Al(1-x)Ga(x+y)At least one of N composition, wherein x and y is all larger than zero and is less than or equal to 1.Epitaxial layer 120 is used to form crystalline substance
Body pipe.In some preferred embodiments, transistor can be gallium nitride transistor, and epitaxial layer 120 includes gallium nitride transistor
At least one of buffer layer, channel layer and barrier layer, in other preferred embodiments, epitaxial layer 120 further includes insert layer.
In this step, the material of epitaxial layer 120 selects as shown in Fig. 2, details are not described herein again.
The epitaxial structure of the gallium nitride transistor provided according to embodiments of the present invention is heavy by argon ion sputtering high temperature gas phase
Product technique, forms between substrate and epitaxial layer comprising the nucleating layer with epitaxial layer respective element, to reduce substrate and extension
Layer between directly contact and generate lattice mismatch and thermal stress mismatch the problem of.In a preferred embodiment, the epitaxial structure
Further include the contact layer between substrate and nucleating layer, the contact layer includes element corresponding with substrate, and with nucleation
The corresponding element of layer loses to be further reduced the lattice mismatch and thermal stress for directly contacting and generating between substrate and epitaxial layer
With the problem of.
The manufacturing method of the epitaxial structure of the gallium nitride transistor of offer according to an embodiment of the present invention is forming epitaxial layer
Before, nucleating layer is formed by argon ion sputtering high temperature gas-phase deposition.The nucleating layer protects substrate table in the next steps
Face, so as to reduce substrate surface be easy to aoxidize and in Metal Organic Chemical Vapor Deposition melt back III group
Epitaxial layer crystal quality declines caused by element or III-V compound (for example, gallium nitride) and substrate surface react
The problem of.
Compared with prior art, the embodiment of the present invention forms nucleating layer using argon ion sputtering high temperature gas-phase deposition,
Instead of the method for forming nucleating layer with MOCVD technique of the prior art, due to benefit argon ion sputtering high temperature of the embodiment of the present invention
Gas-phase deposition is to become argon plasma under the action of radio frequency using argon gas, and argon plasma bombards target, quilt
It shoots down the target material got off and falls on substrate or formed on contact layer nucleating layer, during forming nucleating layer, it is also necessary to
It is added on the basis of argon ion sputtering and is chemically reacted for reacting the process gas such as oxygen, nitrogen and target material, from
And nucleating layer finally is formed on substrate or contact layer, therefore, the method that the embodiment of the present invention forms nucleating layer is physical reactions
And the combination of chemical reaction, and combined just because of physical reactions with chemical reaction, so that the embodiment of the present invention is formed
Nucleating layer is finer and close compared with the prior art.This is because only physical method or only chemical method cannot all reach this
Effect, such as argon ion bombardment target is directly used using only physical method is the material that bombards in the brilliant accumulation on the upper side of target
At film, the material of this film and the material of target be it is identical, cannot pass through chemical reaction and change, for another example only
Nucleating layer, such as AlN are formed by MOCVD technique using chemical method, reactant is TMAl and ammonia, although this technique energy
Aluminium nitride, but only chemical process are formed, nucleating layer compactness is relatively low, meanwhile, compared with sputtering equipment, MOCVD device is opposite
It is more expensive, higher cost.
In addition, the embodiment of the present invention is passed through suitable oxygen in argon ion sputtering high temperature gas-phase deposition, improve
The viscous stickiness of nucleating layer and substrate, and hydrogen has been passed through in MOCVD process equipment, to prevent MOCVD process equipment from exploding, no
It can be passed through oxygen again, so that the viscous stickiness of nucleating layer and substrate can not be improved.Therefore, epitaxial structure provided in an embodiment of the present invention
And its manufacturing method uses reliability and yield comprising improving transistor with the nucleating layer of epitaxial layer respective element, also reduces
Cost.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to embodiment of the disclosure, these embodiments details all there is no detailed descriptionthe, also not
Limiting the disclosure is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is the principle and practical application in order to preferably explain the disclosure, thus belonging to making
Technical field technical staff can be used using the disclosure and the modification on the basis of disclosure well.The disclosure is only by right
The limitation of claim and its full scope and equivalent.
Claims (38)
1. a kind of manufacturing method of gallium nitride transistor, comprising:
Substrate is provided；
Nucleating layer is formed over the substrate；And
Epitaxial layer is formed on the nucleating layer, the epitaxial layer is used to form transistor,
Wherein, the epitaxial layer is III-V compound layer, and the nucleating layer passes through argon ion sputtering high temperature gas-phase deposition
It is formed, and includes the first element identical with the epitaxial layer.
2. the manufacturing method according to claim 1, wherein the epitaxial layer is by Al(1-x)GaxN、In(1-y)GayN and In(1-y)
Al(1-x)Ga(x+y)At least one of N composition, wherein x and y is all larger than zero and is less than or equal to 1.
3. the manufacturing method according to claim 1, wherein the nucleating layer includes second yuan identical with the substrate
Element.
4. manufacturing method according to claim 3, wherein the substrate is Sapphire Substrate.
5. manufacturing method according to claim 4, wherein the nucleating layer is by the nitride of aluminium, the nitrogen oxides of aluminium, indium
Nitrogen oxides, the nitride of indium aluminium, indium aluminium at least one of nitrogen oxides composition.
6. the manufacturing method according to claim 1 further includes, over the substrate before the step of forming nucleating layer
Contact layer is formed, the contact layer contacts between the substrate and the nucleating layer and with the two, wherein the contact layer
Include second element identical with the substrate, and third element identical with the nucleating layer.
7. manufacturing method according to claim 6, wherein the substrate is silicon substrate or silicon carbide substrates.
8. manufacturing method according to claim 7, wherein the contact layer is by the oxide of silicon, the nitride of silicon or silicon
Nitrogen oxides at least two compositions.
9. manufacturing method according to claim 8, wherein the nucleating layer is by the oxide of aluminium, the nitride of aluminium, aluminium
Nitrogen oxides, the oxide of indium, the nitride of indium, the nitrogen oxides of indium, the oxide of indium aluminium, the nitride of indium aluminium, indium aluminium
At least one of nitrogen oxides composition.
10. manufacturing method according to claim 7, wherein the material of the contact layer includes the oxide of silicon,
The nucleating layer by the oxide of aluminium, the nitrogen oxides of aluminium, the oxide of indium, the nitrogen oxides of indium, indium aluminium oxide,
At least one of nitrogen oxides of indium aluminium composition.
11. manufacturing method according to claim 10, wherein the contact layer is made of silica, the nucleating layer by
At least one of aluminum oxynitride or aluminum oxynitride and nitridation aluminium mixture composition.
12. manufacturing method according to claim 7, wherein the material of the contact layer includes the nitride of silicon,
The nucleating layer by the nitride of aluminium, the nitrogen oxides of aluminium, the nitride of indium, the nitrogen oxides of indium, indium aluminium nitride,
At least one of nitrogen oxides of indium aluminium composition.
13. manufacturing method according to claim 7, wherein the material of the contact layer includes the nitrogen oxides of silicon,
The nucleating layer is by the oxide of aluminium, the nitride of aluminium, the nitrogen oxides of aluminium, the oxide of indium, the nitride of indium, indium
At least one of nitrogen oxides, the oxide of indium aluminium, the nitride of indium aluminium, nitrogen oxides of indium aluminium form.
14. manufacturing method according to claim 6, wherein the contact layer with a thickness of 1 nanometer to 5 nanometers.
15. the manufacturing method according to claim 3 or 6, wherein the nucleating layer with a thickness of 10 nanometers to 100 nanometers.
16. the manufacturing method according to claim 3 or 6, wherein in the argon ion sputtering high temperature gas-phase deposition
In, by controlling the Element Species in nucleation layer material described in the flow and proportion adjustment of the sputter gas and the process gas
Class and ratio adjust the thickness of the nucleating layer by controlling the sputtering power and process time.
17. the manufacturing method according to claim 16, wherein in the argon ion sputtering high temperature gas-phase deposition,
The nucleating layer is formed using 1000 watts to 5000 watts of sputtering power.
18. the manufacturing method according to claim 16, wherein in the argon ion sputtering high temperature gas-phase deposition,
Flow is used to generate argon ion, the sputtering gas to 300 standard milliliters sputter gas per minute per minute for 30 standard milliliters
Body includes argon gas.
19. the manufacturing method according to claim 16, wherein in the argon ion sputtering high temperature gas-phase deposition,
Metal ion is generated using argon ion bombardment metal targets, the metal ion is reacted with process gas, forms the nucleating layer.
20. the manufacturing method according to claim 16, wherein in the argon ion sputtering high temperature gas-phase deposition,
The process gas includes nitrogen and/or oxygen, and the flow of nitrogen is 30 standard milliliters per minute to 300 every point of standard milliliters
Clock, the flow of oxygen are that 1 standard milliliters are per minute to 10 standard milliliters per minute.
21. the manufacturing method according to claim 16, wherein in the argon ion sputtering high temperature gas-phase deposition,
The range of technological temperature includes 600 to 700 degrees Celsius.
22. the manufacturing method according to claim 1, wherein the epitaxial layer be the gallium nitride transistor buffer layer,
At least one of channel layer and barrier layer.
23. a kind of gallium nitride transistor, comprising:
Substrate；
Nucleating layer is located on the substrate；And
Epitaxial layer is located on the nucleating layer, and the epitaxial layer is used to form transistor,
Wherein, the epitaxial layer is III-V compound layer, and the nucleating layer passes through argon ion sputtering high temperature gas-phase deposition
It is formed, and includes the first element identical with the epitaxial layer.
24. gallium nitride transistor according to claim 23, wherein the epitaxial layer is by Al(1-x)GaxN、In(1-y)GayN
And In(1-y)Al(1-x)Ga(x+y)At least one of N composition, wherein x and y is all larger than zero and is less than or equal to 1.
25. gallium nitride transistor according to claim 23, wherein the nucleating layer includes identical with the substrate the
Was Used.
26. gallium nitride transistor according to claim 25, wherein the substrate is Sapphire Substrate.
27. gallium nitride transistor according to claim 26, wherein the nucleating layer is by the nitride of aluminium, the nitrogen oxygen of aluminium
At least one of compound, the nitrogen oxides of indium, the nitride of indium aluminium, nitrogen oxides of indium aluminium form.
28. gallium nitride transistor according to claim 23 further includes contact layer, the contact layer be located at the substrate and
It is contacted between the nucleating layer and with the two, wherein the contact layer includes second element identical with the substrate, Yi Jiyu
The identical third element of the nucleating layer.
29. gallium nitride transistor according to claim 28, wherein the substrate is silicon substrate or silicon carbide substrates.
30. gallium nitride transistor according to claim 29, wherein the contact layer by silicon oxide, silicon nitridation
At least two compositions in the nitrogen oxides of object or silicon.
31. gallium nitride transistor according to claim 30, wherein the nucleating layer by aluminium oxide, aluminium nitridation
Object, the nitrogen oxides of aluminium, the oxide of indium, the nitride of indium, the nitrogen oxides of indium, the oxide of indium aluminium, indium aluminium nitride,
At least one of nitrogen oxides of indium aluminium composition.
32. gallium nitride transistor according to claim 29, wherein the material of the contact layer includes the oxide of silicon,
The nucleating layer by the oxide of aluminium, the nitrogen oxides of aluminium, the oxide of indium, the nitrogen oxides of indium, indium aluminium oxide,
At least one of nitrogen oxides of indium aluminium composition.
33. gallium nitride transistor according to claim 32, wherein the contact layer is made of silica, the nucleation
Layer is made of at least one of aluminum oxynitride or aluminum oxynitride and nitridation aluminium mixture.
34. gallium nitride transistor according to claim 29, wherein the material of the contact layer includes the nitride of silicon,
The nucleating layer by the nitride of aluminium, the nitrogen oxides of aluminium, the nitride of indium, the nitrogen oxides of indium, indium aluminium nitride,
At least one of nitrogen oxides of indium aluminium composition.
35. gallium nitride transistor according to claim 29, wherein the material of the contact layer includes the nitrogen oxidation of silicon
Object,
The nucleating layer is by the oxide of aluminium, the nitride of aluminium, the nitrogen oxides of aluminium, the oxide of indium, the nitride of indium, indium
At least one of nitrogen oxides, the oxide of indium aluminium, the nitride of indium aluminium, nitrogen oxides of indium aluminium form.
36. gallium nitride transistor according to claim 28, wherein the contact layer with a thickness of 1 nanometer to 5 nanometers.
37. the gallium nitride transistor according to claim 25 or 28, wherein the nucleating layer with a thickness of 10 nanometers extremely
100 nanometers.
38. gallium nitride transistor according to claim 16, wherein the epitaxial layer is the slow of the gallium nitride transistor
Rush at least one of layer, channel layer and barrier layer.
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